CN210327509U - Novel reverse doherty amplifier - Google Patents

Novel reverse doherty amplifier Download PDF

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Publication number
CN210327509U
CN210327509U CN201921653328.8U CN201921653328U CN210327509U CN 210327509 U CN210327509 U CN 210327509U CN 201921653328 U CN201921653328 U CN 201921653328U CN 210327509 U CN210327509 U CN 210327509U
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amplifier
resistance
network
resistor
circuit
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CN201921653328.8U
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章作宏
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Shenzhen Ruihua Communication Technology Co Ltd
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Shenzhen Ruihua Communication Technology Co Ltd
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Abstract

The utility model discloses a novel reverse doherty amplifier, including microwave power transistor, be provided with the circuit board in the microwave power transistor, the circuit board is provided with electric bridge, carrier amplifier and peaking amplifier, and the electric bridge is line connection respectively in first resistance, second resistance, and first resistance connects gradually in first network input, carrier amplifier, first network output, merit divide circuit, third resistance, second network output, peaking amplifier, second network input, third resistance. The power dividing circuit comprises a fourth resistor connected to the second resistor and the output end of the first network. The beneficial effects are that: the connection structure enables amplitude distortion and phase distortion of output signals of the Doherty amplifier to be small, and enables the output signals to be strong.

Description

Novel reverse doherty amplifier
Technical Field
The utility model relates to the field of communication technology, especially, relate to a novel reverse doherty amplifier.
Background
Wireless communication technology has been widely used in various industries, and the most obvious of them is the 4G and 5G big data era. In order to ensure the communication quality of wireless communication, improve the utilization rate of frequency spectrum and reduce the operation cost of wireless communication, higher and higher requirements are put forward on the indexes of efficiency, broadband, linearity and the like of wireless communication equipment. The rf power amplifying system is a core device in a wireless communication system, and its performance plays a decisive role in the whole wireless communication system. At present, a Doherty (Doherty) amplifier is generally adopted in a radio frequency power amplification system to realize high efficiency performance, and a predistortion technology is added to realize high efficiency and high linearity indexes of the radio frequency power amplification system; however, the output signal of the conventional Doherty amplifier has large amplitude distortion and phase distortion to the input signal, so that the output signal is poor; this is a problem that is currently urgently to be solved.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a novel reverse doherty amplifier to solve the problem that above-mentioned background art appears.
In order to solve the technical problem, the utility model discloses a technical scheme does: the utility model provides a novel reverse doherty amplifier, includes a microwave power transistor, be provided with the circuit board in the microwave power transistor, the circuit board is provided with electric bridge, carrier amplifier and peak amplifier, the electric bridge is line connection respectively in first resistance, second resistance, first resistance is connected in first network input end, first network input end is connected in carrier amplifier, carrier amplifier connects in first network output end, first network output end is connected respectively in merit divide circuit, third resistance is connected in second network output end, second network output end is connected in peak amplifier, peak amplifier connects in second network input end, second network input end is connected in second resistance.
As the preferred embodiment of the present invention, the power dividing circuit includes a fourth resistor connected to the second resistor and the first network output terminal.
As a preferred embodiment of the present invention, the bridge and the fourth resistor are grounded through a protection resistor.
As the utility model discloses a preferred scheme, the circuit is divided to the merit is externally connected in predistortion circuit, coupling circuit, signal bandwidth identification circuit, the control unit is connected in peak amplifier.
The beneficial effect of adopting above-mentioned technical scheme is: the impedance of the peak amplifier is open, the carrier amplifier pulls the third resistor at the impedance of the combining part, the fourth resistor is reduced by half, the reduced fourth resistor reduces the peak voltage by half, the saturation current is unchanged, the doherty has a first peak value, the carrier amplifier and the peak amplifier are output in the best impedance matching mode, the doherty achieves the second peak value efficiency and the maximum output power, DoThe herty amplifier makes the amplitude distortion and phase distortion of the output signal small, making the output signal strong.
Drawings
Fig. 1 is a connection block diagram of the present invention;
in the figure, 1, a bridge; 2. a first resistor; 3. a first network input; 4. a carrier amplifier; 5. a first network output; 6. a third resistor; 7. a second network output; 8. a peak amplifier; 9. a second network input; 10. a second resistor; 11. a fourth resistor; 12. and (4) protecting the resistor.
Detailed Description
The following describes the present invention with reference to the accompanying drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features related to the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
According to fig. 1, the present embodiment provides a novel reverse doherty amplifier, which includes a microwave power transistor, a circuit board is disposed in the microwave power transistor, the circuit board is provided with an electrical bridge 1, a carrier amplifier 4 and a peak amplifier 8, the electrical bridge 1 is respectively connected to a first resistor 2 and a second resistor 10, the first resistor 2 is connected to a first network input end 3, the first network input end 3 is connected to the carrier amplifier 4, the carrier amplifier 4 is connected to a first network output end 5, the first network output end 5 is respectively connected to a power divider and a third resistor 6, the third resistor 6 is connected to a second network output end 7, the second network output end 7 is connected to the peak amplifier 8, the peak amplifier 8 is connected to a second network input end 9, and the second network input end 9 is connected to the second resistor 10. The power dividing circuit comprises a fourth resistor 11 connected to the second resistor 10 and the first network output terminal 5.
The bridge 1 and the fourth resistor 11 are both grounded via a protection resistor 12.
The power dividing circuit is externally connected with the predistortion circuit, the coupling circuit, the signal bandwidth identification circuit and the control unit, and the control unit is connected with the peak amplifier 8.
Compared with the traditional doherty amplifier, the novel inverted doherty amplifier has the following differences that (1) the quarter-wavelength line of the output end of the novel inverted doherty amplifier is behind the carrier amplifier 4, and the quarter-wavelength line of the output end of the traditional doherty amplifier is behind the peak amplifier 8, so that the novel inverted doherty amplifier is named; (2) the novel inversion doherty carrier amplifier 4 is designed according to the Z of 100 ohms, and the peak amplifier 8 is designed according to the Z of 72.25 ohms; (3) a high-impedance line with characteristic impedance of 85 ohms and quarter wavelength is used behind the peak amplifier 8; (4) the combination of the carrier amplifier 4 and the peak amplifier 8 is already 50 ohms, so that impedance transformation is not needed. The following working process can also be divided into three stages: (1) when the signal RFin input into the amplifier is less than 0.5Pmax, due to the high impedance line with the wavelength of one quarter of 85 ohms at the output end behind the auxiliary amplifier, the impedance Zpeak1 of the peak amplifier 8 tube is regarded as ideal infinite, Z2 is 50 ohms, Zmain is designed according to 100 ohms, the impedance of the carrier amplifier 4 looking into the load is 50 ohms, meanwhile, the leakage resistance of the power amplifier is doubled, and when the output voltage reaches the peak voltage, the output current is only half of the peak current due to the increased leakage resistance. Thus, the output power at which doherty reaches the first peak efficiency is 6dB back-off relative to the full power output power. (2) When the input signal 0.5Pmax is less than or equal to RFin < Pmax, the output voltage of the carrier amplifier 4 reaches saturation, and the peak amplifier 8 starts to work due to proper bias. As the input power increases, the peak amplifier 8 output current increases. As known from active load pulling techniques, the conjugate impedance of Zmain begins to vary from 50 ohms to 100 ohms and the conjugate impedance of Zpeak begins to vary from ideal infinity to 72.25 ohms. This allows the output voltage of carrier amplifier 4 to remain substantially constant without over-saturation while the output current of carrier amplifier 4 continues to increase and the efficiency of carrier amplifier 4 remains at a maximum. The doherty efficiency is reduced because the slave amplifier operating current does not reach a maximum, but remains at a higher level. (3) When the input signal RFin is Pmax, the conjugate impedance of Zmain becomes 100 ohms, the conjugate impedance of Zpeak becomes 72.25 ohms, the forward impedance at the junction is Zmain 100 ohms, the parallel Zpeak 85/72.25 equals to 100 ohms, i.e. 50 ohms, and Z2 equals to 50 ohms, the carrier amplifier 4 and the peak amplifier 8 reach saturation output in the form of best matching impedance, at this time, the doherty reaches the maximum power output, and the doherty efficiency also reaches the maximum efficiency value, i.e. the second peak efficiency.
Through the analysis, the novel inversion doherty has the following advantages compared with the traditional classical doherty: (1) the load modulation effect is obvious (the novel inversion doherty drain resistance is doubled, and the traditional doherty drain resistance is doubled); (2) the PCB area is reduced, and the cost is saved (35 ohm 1/4 wavelength lines are not needed for the novel inverted doherty, the impedance of the novel inverted doherty power amplifier is larger than 50 ohm, the design matching is flexible, and the general single-order matching can be completed).
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in the embodiments without departing from the principles and spirit of the invention, and the scope of the invention is to be accorded the full scope of the claims.

Claims (4)

1. The utility model provides a novel reverse doherty amplifier, its characterized in that includes a microwave power transistor, be provided with the circuit board in the microwave power transistor, the circuit board is provided with electric bridge, carrier amplifier and peak amplifier, the electric bridge is line connection respectively in first resistance, second resistance, first resistance is connected in first network input end, first network input end is connected in carrier amplifier, carrier amplifier connects in first network output end, first network output end is connected respectively in merit divide circuit, third resistance is connected in second network output end, second network output end is connected in peak amplifier, peak amplifier connects in second network input end, second network input end is connected in second resistance.
2. The novel inverting doherty amplifier of claim 1 wherein the power splitting circuit includes a fourth resistor connected to the second resistor and the output of the first network.
3. The novel inverse doherty amplifier of claim 1 wherein the bridge and the fourth resistor are grounded through a protection resistor.
4. The novel reverse doherty amplifier of claim 1, wherein the power dividing circuit is externally connected to the predistortion circuit, the coupling circuit, the signal bandwidth identification circuit and the control unit, and the control unit is connected to the peak amplifier.
CN201921653328.8U 2019-09-28 2019-09-28 Novel reverse doherty amplifier Active CN210327509U (en)

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CN201921653328.8U CN210327509U (en) 2019-09-28 2019-09-28 Novel reverse doherty amplifier

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CN210327509U true CN210327509U (en) 2020-04-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113395045A (en) * 2021-05-31 2021-09-14 锐石创芯(深圳)科技有限公司 Doherty power amplifier, system and control method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113395045A (en) * 2021-05-31 2021-09-14 锐石创芯(深圳)科技有限公司 Doherty power amplifier, system and control method

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