CN103779488A - White LED light photoelectric glass - Google Patents
White LED light photoelectric glass Download PDFInfo
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- CN103779488A CN103779488A CN201410044268.5A CN201410044268A CN103779488A CN 103779488 A CN103779488 A CN 103779488A CN 201410044268 A CN201410044268 A CN 201410044268A CN 103779488 A CN103779488 A CN 103779488A
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- 239000011521 glass Substances 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 241001025261 Neoraja caerulea Species 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 4
- 239000002223 garnet Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to white LED light photoelectric glass. LEDs giving out yellow light and LEDs giving out blue light are packaged inside a photoelectric glass body, and thus the LED light photoelectric glass is made. According to each LED giving out the yellow light, InGaN chips and YAG are packaged together. A substrate of Each LED giving out the blue light is installed in a bowl-shaped reflecting cavity, and is covered with a thin resin layer mixed with YAG. Part of the blue light given out by the substrate of each LED is absorbed by fluorescent powder, and the other part of the blue light is mixed with yellow light given out by the fluorescent powder to form white light. According to an InGaN/YAG white LED, different types of white light with the color temperature ranging from 3500K to 10000K can be obtained by changing the chemical composition of the YAG fluorescent powder and adjusting the thickness of a fluorescent powder layer. The luminous efficiency of the white LED can be higher than 120LM/W, the ultraviolet light component and the infrared ray component do not exist in an LED spectrum, the white LED cannot give out heat, harmful radiation is not generated, and the LED light photoelectric glass has the advantages that energy saving is achieved, and the service life is long.
Description
Technical field
The present invention relates to a kind of white led lamps photoelectric glass, belong to LED technical field.
Background technology
Photoelectric glass is to adopt unique innovative technology by compound LED light source embedding glass, and electrooptical technology and traditional glass are combined together, has both retained the light transmission features of glass, can show again animation and variously dazzle beautiful color, has greatly promoted the range of application of glass.Use transparent circuitry, after energising, built-in LED lamp source is luminous, and except light source point, glass is still luminous.After powered-down, be as good as with simple glass.In indoor (or dark place), picture effect is clear gorgeous.Under strong daylight, picture is still high-visible, without size limitations, can carry out as required oversize making.Amorphism limitation, can make by carrying out all kinds of abnormity green, environmental protection, energy-conservation.
White led lamps has met the demand of people to white light source, contains a large amount of mercury vapours in traditional fluorescent lamp, if broken mercury vapour can evaporate in atmosphere.But LED fluorescent lamp does not use mercury, and LED product is not leaded yet, and environment is played a protective role.LED fluorescent lamp is known as the green illumination of 21st century.Conventional lamp can produce a large amount of heat energy, and LED light fixture is that electric energy is all converted to luminous energy, can not cause the waste of the energy.And can not produce yet and take off 0 look phenomenon file, clothing.Traditional fluorescent lamp is that the high voltage discharging by rectifier is lighted, and in the time of lower voltage, cannot light.And LED light fixture can be lighted within the voltage of certain limit, can also adjust brightness.
The wafer that the core of light-emitting diode is made up of p-type semiconductor and N-shaped semiconductor has a transition zone between p-type semiconductor and N-shaped semiconductor, is called p-n junction.In the PN junction of some semi-conducting material, the minority carrier of injection and majority carrier compound tense can discharge unnecessary energy with the form of light, thereby electric energy is directly converted to luminous energy.PN junction adds reverse voltage, and minority carrier is difficult to inject, therefore not luminous.This diode of injection electroluminescence principle making that utilizes, light-emitting diode, is generally called LED.When it is during in forward operating state (two ends add forward voltage), when electric current flows to negative electrode from LED anode, semiconductor crystal just sends the light from ultraviolet to infrared different colours, the power of light and current related.
Summary of the invention
The object of the present invention is to provide a kind of white led lamps photoelectric glass, to can carry out better luminously, improve result of use and the efficiency of LED lamp, the promoting the use of of convenient LED lamp.
To achieve these goals, technical scheme of the present invention is as follows.
A kind of white led lamps photoelectric glass, is encapsulated in photoelectric glass inside by the LED of the LED of Yellow light-emitting low temperature and blue light-emitting, thereby is prepared into LED lamp photoelectric glass.
Further, the LED of above-mentioned Yellow light-emitting low temperature is packaged together InGaN chip and yttrium-aluminium-garnet (YAG), and concrete grammar is: utilize GaN chip blue light-emitting (λ
p=465nm, Wd=30nm) feature, its high temperature sintering is made containing Ce
3+yAG fluorescent material, be subject to this blue-light excited after this LED lamp send sodium yellow, peak value 550nm.
Further, above-mentioned blue-ray LED substrate is arranged in bowl-type reflection cavity, covers to be mixed with the thin resin layer of YAG, and YAG thin resin layer thickness is 200～500nm.
Further, the blue light part that above-mentioned LED substrate sends is absorbed by fluorescent material, and the yellow light mix that another part blue light and fluorescent material send forms white light.
Further, above-mentioned InGaN/YAG White LED, by changing the chemical composition of YAG fluorescent material and the thickness of adjusting phosphor powder layer, can obtain the white light of all kinds of colour temperature 3500～10000K.
Further, the concrete preparation process of above-mentioned InGaN material is as follows: before growth sample, first substrate is placed in to the environment of hydrogen, dries 10～40 minutes under the condition of 1100～1500 ℃, to remove impurity and the oxide of substrate surface; In the phosphoric acid that was 1:4～1:6 in ratio and the hot solution of sulfuric acid, soak 10 minutes to remove impurity before baking; After clean substrate, underlayer temperature is dropped to 500 ℃～650 ℃, low-temperature epitaxy one deck resilient coating on substrate, the thickness 25～40nm of resilient coating; Close TMGa source, underlayer temperature is elevated to 1000～1200 ℃; Then open again TMGa source, growing GaN layer under the high temperature of 1000～1200 ℃; After intrinsic GaN has grown 1～2um, open silane source and adulterate, growth N-GaN; N-GaN 2～5 um that grow; Then open TMIn source, grown quantum trap active area; After having grown in active area, the aluminium of the P type doping of one deck 40～60 nm that then grow is sowed nitrogen (AlGaN); The P-GaN of last regrowth one deck 200～250nm.
This beneficial effect of the invention is: this White LED luminous efficiency has broken through 120LM/W, is 8 times of incandescent lamp 15LM/W, is more than 2 times of fluorescent lamp 50LM/W.In the spectrum of LED, there is no ultraviolet ray and infrared ray composition, so can not generate heat, do not produce harmful radiation.And the luminous flux half-life of LED be greater than 50,000 hours, can normally use 20 years, device lifetime is generally all more than 100,000 hours, 10 times of fluorescent lifetime, be 100 times of incandescent lamp, so substantially can not damage, this light fixture has extraordinary durable energy saving life characteristic.
Embodiment
Below in conjunction with embodiment, the specific embodiment of the present invention is described, to better understand the present invention.
embodiment 1
The white led lamps photoelectric glass of the present embodiment, is encapsulated in photoelectric glass inside by the LED of the LED of Yellow light-emitting low temperature and blue light-emitting, thereby is prepared into LED lamp photoelectric glass.
The LED of above-mentioned Yellow light-emitting low temperature is packaged together InGaN chip and yttrium-aluminium-garnet (YAG), and concrete grammar is: utilize GaN chip blue light-emitting (λ
p=465nm, Wd=30nm) feature, its high temperature sintering is made containing Ce
3+yAG fluorescent material, be subject to this blue-light excited after this LED lamp send sodium yellow, peak value 550nm.
Above-mentioned blue-ray LED substrate is arranged in bowl-type reflection cavity, covers to be mixed with the thin resin layer of YAG, and YAG thin resin layer thickness is 200nm.
The blue light part that above-mentioned LED substrate sends is absorbed by fluorescent material, and the yellow light mix that another part blue light and fluorescent material send forms white light.
Above-mentioned InGaN/YAG White LED, by changing the chemical composition of YAG fluorescent material and the thickness of adjusting phosphor powder layer, can obtain the white light of all kinds of colour temperature 3500～10000K.
The concrete preparation process of above-mentioned InGaN material is as follows: before growth sample, first substrate is placed in to the environment of hydrogen, dries 40 minutes under the condition of 1100 ℃, to remove impurity and the oxide of substrate surface; In the phosphoric acid that was 1:6 in ratio and the hot solution of sulfuric acid, soak 10 minutes to remove impurity before baking; After clean substrate, underlayer temperature is dropped to 500 ℃, low-temperature epitaxy one deck resilient coating on substrate, the thickness 25nm of resilient coating; Close TMGa source, underlayer temperature is elevated to 1000 ℃; Then open again TMGa source, growing GaN layer under the high temperature of 1000 ℃; After intrinsic GaN has grown 1um, open silane source and adulterate, growth N-GaN; N-GaN 2 um that grow; Then open TMIn source, grown quantum trap active area; After having grown in active area, the aluminium of the P type doping of one deck 40 nm that then grow is sowed nitrogen (AlGaN); The P-GaN of last regrowth one deck 200nm.
embodiment 2
The white led lamps photoelectric glass of the present embodiment, is encapsulated in photoelectric glass inside by the LED of the LED of Yellow light-emitting low temperature and blue light-emitting, thereby is prepared into LED lamp photoelectric glass.
The LED of above-mentioned Yellow light-emitting low temperature is packaged together InGaN chip and yttrium-aluminium-garnet (YAG), and concrete grammar is: utilize GaN chip blue light-emitting (λ
p=465nm, Wd=30nm) feature, its high temperature sintering is made containing Ce
3+yAG fluorescent material, be subject to this blue-light excited after this LED lamp send sodium yellow, peak value 550nm.
Above-mentioned blue-ray LED substrate is arranged in bowl-type reflection cavity, covers to be mixed with the thin resin layer of YAG, and YAG thin resin layer thickness is 500nm.
The blue light part that above-mentioned LED substrate sends is absorbed by fluorescent material, and the yellow light mix that another part blue light and fluorescent material send forms white light.
Above-mentioned InGaN/YAG White LED, by changing the chemical composition of YAG fluorescent material and the thickness of adjusting phosphor powder layer, can obtain the white light of all kinds of colour temperature 3500～10000K.
The concrete preparation process of above-mentioned InGaN material is as follows: before growth sample, first substrate is placed in to the environment of hydrogen, dries 10 minutes under the condition of 1500 ℃, to remove impurity and the oxide of substrate surface; In the phosphoric acid that was 1:4 in ratio and the hot solution of sulfuric acid, soak 10 minutes to remove impurity before baking; After clean substrate, underlayer temperature is dropped to 500 ℃～650 ℃, low-temperature epitaxy one deck resilient coating on substrate, the thickness 40nm of resilient coating; Close TMGa source, underlayer temperature is elevated to 1200 ℃; Then open again TMGa source, growing GaN layer under the high temperature of 1200 ℃; After intrinsic GaN has grown 2um, open silane source and adulterate, growth N-GaN; N-GaN 5 um that grow; Then open TMIn source, grown quantum trap active area; After having grown in active area, the aluminium of the P type doping of one deck 60 nm that then grow is sowed nitrogen (AlGaN); The P-GaN of last regrowth one deck 250nm.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (6)
1. a white led lamps photoelectric glass, is characterized in that: the LED of the LED of Yellow light-emitting low temperature and blue light-emitting is encapsulated in to photoelectric glass inside, thereby is prepared into LED lamp photoelectric glass.
2. white led lamps photoelectric glass according to claim 1, is characterized in that: the LED of described Yellow light-emitting low temperature is packaged together InGaN chip and yttrium-aluminium-garnet (YAG), and concrete grammar is: utilize GaN chip blue light-emitting (λ
p=465nm, Wd=30nm) feature, its high temperature sintering is made containing Ce
3+yAG fluorescent material, be subject to this blue-light excited after this LED lamp send sodium yellow, peak value 550nm.
3. white led lamps photoelectric glass according to claim 1, is characterized in that: described blue-ray LED substrate is arranged in bowl-type reflection cavity, covers to be mixed with the thin resin layer of YAG, and YAG thin resin layer thickness is 200～500nm.
4. according to the white led lamps photoelectric glass described in claims 1 to 3, it is characterized in that: the blue light part that described LED substrate sends is absorbed by fluorescent material that the yellow light mix that another part blue light and fluorescent material send forms white light.
5. according to the white led lamps photoelectric glass described in claim 1 to 4, it is characterized in that: described InGaN/YAG White LED, by changing the chemical composition of YAG fluorescent material and the thickness of adjusting phosphor powder layer, can obtain the white light of all kinds of colour temperature 3500～10000K.
6. according to the white led lamps photoelectric glass described in claim 1 to 5, it is characterized in that: the concrete preparation process of described InGaN material is as follows: before growth sample, first substrate is placed in to the environment of hydrogen, under the condition of 1100～1500 ℃, dry 10～40 minutes, to remove impurity and the oxide of substrate surface; In the phosphoric acid that was 1:4～1:6 in ratio and the hot solution of sulfuric acid, soak 10 minutes to remove impurity before baking; After clean substrate, underlayer temperature is dropped to 500 ℃～650 ℃, low-temperature epitaxy one deck resilient coating on substrate, the thickness 25～40nm of resilient coating; Close TMGa source, underlayer temperature is elevated to 1000～1200 ℃; Then open again TMGa source, growing GaN layer under the high temperature of 1000～1200 ℃; After intrinsic GaN has grown 1～2um, open silane source and adulterate, growth N-GaN; N-GaN 2～5 um that grow; Then open TMIn source, grown quantum trap active area; After having grown in active area, the aluminium of the P type doping of one deck 40～60 nm that then grow is sowed nitrogen (AlGaN); The P-GaN of last regrowth one deck 200～250nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410044268.5A CN103779488A (en) | 2014-01-31 | 2014-01-31 | White LED light photoelectric glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410044268.5A CN103779488A (en) | 2014-01-31 | 2014-01-31 | White LED light photoelectric glass |
Publications (1)
| Publication Number | Publication Date |
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| CN103779488A true CN103779488A (en) | 2014-05-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410044268.5A Pending CN103779488A (en) | 2014-01-31 | 2014-01-31 | White LED light photoelectric glass |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002033521A (en) * | 2000-07-14 | 2002-01-31 | Showa Denko Kk | White light-emitting element and manufacturing method thereof |
| CN1495920A (en) * | 1996-07-29 | 2004-05-12 | ���ǻ�ѧ��ҵ��ʽ���� | Surface luminous light source |
| CN101482235A (en) * | 2009-01-22 | 2009-07-15 | 深圳市聚飞光电有限公司 | Color temperature-adjustable high-color development LED lamp and manufacturing method thereof |
| CN102079977A (en) * | 2010-10-21 | 2011-06-01 | 罗维鸿 | Fluorescent powder for warm white LED and gadolinium garnet thereof |
| CN102130143A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | White LED chip and forming method thereof |
| CN102280547A (en) * | 2011-08-31 | 2011-12-14 | 厦门大学 | GaN semiconductor luminotron with P-type active region |
-
2014
- 2014-01-31 CN CN201410044268.5A patent/CN103779488A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1495920A (en) * | 1996-07-29 | 2004-05-12 | ���ǻ�ѧ��ҵ��ʽ���� | Surface luminous light source |
| JP2002033521A (en) * | 2000-07-14 | 2002-01-31 | Showa Denko Kk | White light-emitting element and manufacturing method thereof |
| CN101482235A (en) * | 2009-01-22 | 2009-07-15 | 深圳市聚飞光电有限公司 | Color temperature-adjustable high-color development LED lamp and manufacturing method thereof |
| CN102130143A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | White LED chip and forming method thereof |
| CN102079977A (en) * | 2010-10-21 | 2011-06-01 | 罗维鸿 | Fluorescent powder for warm white LED and gadolinium garnet thereof |
| CN102280547A (en) * | 2011-08-31 | 2011-12-14 | 厦门大学 | GaN semiconductor luminotron with P-type active region |
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Application publication date: 20140507 |
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