CN103779183B - Method for treating substrate - Google Patents
Method for treating substrate Download PDFInfo
- Publication number
- CN103779183B CN103779183B CN201310488001.0A CN201310488001A CN103779183B CN 103779183 B CN103779183 B CN 103779183B CN 201310488001 A CN201310488001 A CN 201310488001A CN 103779183 B CN103779183 B CN 103779183B
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- Prior art keywords
- etching gas
- thin film
- film
- substrate
- etching
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a method for treating a substrate. The method comprises a substrate providing step in which a substrate with a first thin film and a second thin film is provided, an etching by-product generating step in which top flowing etching gas is supplied on the substrate and an etching by-product is generated on a top surface of the first thin film, a first thin film etching step in which the substrate is subjected to heat treatment, the etching by-product is removed, and the first thin film is etched, and an optional removing step in which bottom flowing etching gas is supplied on the substrate, and the rest of the first thin film and the second thin film is removed according to needs.
Description
Technical field
The present disclosure generally relates to semiconductor making method, is with regard in a within the chamber, for the control of multiple thin film particularly
The substrate processing method using same of its respective etching selectivity.
Prior art
Memory element or display element may include multiple thin film of the stacking on substrate.Multiple thin film can be walked by means of photoetching
Rapid and etching step and form pattern.Etching step may include dry etching method or Wet-type etching method.Etching step according to
The etching selectivity of each thin film is performed.Etching selectivity can be determined according to the inherent character of etching gas or etching solution.When
When removing thin film, should put in corresponding chambers and be etched.Therefore, previous substrate processing method using same has lacking for productivity ratio decline
Point.
The content of the invention
[technical problem to be solved]
The technical problem that the present invention will be realized is to provide one kind can respectively to adjust for multiple thin film in a within the chamber
The substrate processing method using same of etching selectivity.
In addition, another problem is that for the present invention provides a kind of processing substrate that improve can productivity ratio and production yield
Method.
[solution of problem]
The substrate processing method using same of embodiment of the present invention includes：Substrate provide step, its offer be formed with the first film and
The substrate of the second thin film；Etch byproducts forming step, it provides flowing etching gas in top on the substrate, in the first film
Top surface formed etch byproducts；The first film etching step, it carries out heat treatment to the substrate, removes the etching by-product
Thing, etches the first film；And optional removal step, it provides flows etching gas on the substrate, optionally
Remove remaining one in the first film and second thin film.
According to one of present invention embodiment, the first film may include silicon oxide film.
According to another embodiment of the present invention, second thin film may include polysilicon or silicon nitride film.
According to one of present invention embodiment, the top flowing etching gas and the flows etching gas may include three
Nitrogen fluoride.
According to another embodiment of the present invention, the Nitrogen trifluoride can undergo remote plasma process.
According to one of present invention embodiment, the etch byproducts may include ammonia, Fluohydric acid. or silicon.
According to another embodiment of the present invention, the heat treatment of the substrate can be in 100 DEG C of execution.
According to one of present invention embodiment, flow at the top of this etching gas and the flows etching gas providing
When, it is possible to provide active gasess or reacting gas.
According to another embodiment of the present invention, the active gasess may include oxygen.
According to one of present invention embodiment, the reacting gas may include hydrogen or nitrogen.
The substrate processing method using same of another embodiment of the present invention includes：Substrate is loaded into step, will be formed with the first film
And second thin film substrate be loaded within the chamber；Thin film removal step, to the within the chamber top flowing etching gas or bottom are provided
One of flowing etching gas, removes one of the first film and second thin film；And remaining thin film removal step, to this
Within the chamber is provided remaining one in top flowing etching gas or the flows etching gas, remove the first film with
Remaining one in second thin film.
According to one of present invention embodiment, the top flowing etching gas and the flows etching gas may include Jing
By the Nitrogen trifluoride of remote plasma process.
According to another embodiment of the present invention, the top flowing etching gas can be in the first film or second thin film
Upper formation etch byproducts.
According to one of present invention embodiment, the step of removing the etch byproducts is also may include.
According to another embodiment of the present invention, the etch byproducts removal step may include the heat treatment step of the substrate
Suddenly.
According to one of present invention embodiment, the Nitrogen trifluoride can mix with reacting gas or active gasess and be provided in the chamber
It is indoor.
According to another embodiment of the present invention, the reacting gas may include hydrogen or nitrogen.
According to one of present invention embodiment, the active gasess may include oxygen.
According to another embodiment of the present invention, the first film and the second thin film can respectively include silicon oxide film and polycrystalline
Silicon.
According to one of present invention embodiment, the first film and the second thin film can respectively include silicon oxide film and silicon nitride
Film.
[invention effect]
The substrate processing method using same of embodiment of the present invention may include surface oxidation step of the insulating barrier with semiconductor layer, etching
Step and heat treatment step.Surface oxidation step can be the step of the first top surface formation sealing insulating barrier in semiconductor layer
Suddenly.Etching step can be the step of making the sealing insulating barrier and the insulating barrier form etch byproducts.Heat treatment step can be
The step of except etch byproducts.
Therefore, the substrate processing method using same of embodiment of the present invention can easily adjust insulating barrier and break with the etching of semiconductor layer
Difference.
Description of the drawings
Fig. 1 is to show the figure for illustrating the substrate board treatment of the substrate processing method using same of the present invention.
Fig. 2 is the flow chart of the substrate processing method using same for showing embodiment of the present invention.
Fig. 3 to Fig. 7 is the process section of the substrate processing method using same of Fig. 2.
Fig. 8 is the etching for comparing the silicon oxide film under the different supply flows for showing top flowing etching gas and polysilicon
The chart of amount.
Fig. 9 is the etching for comparing the silicon oxide film under the different supply flows for showing flows etching gas and polysilicon
The chart of amount.
Specific embodiment
Embodiments of the present invention are provided for more completely illustrating the present invention, following embodiment party to those skilled in the art
Formula can be deformed into various different shapes, and the scope of the present invention is not limited to implementation below.Conversely, the grade embodiment makes
The disclosure is more fully, completely, there is provided for intactly transmitting the thought of the present invention to those skilled in the art.In addition, in accompanying drawing
The thickness of each layer or size system are lavished praise on oneself for the facility and the definition that illustrate.
In description in the whole text, when refer to one of region, radius, distance etc. element and other elements "
Continuously ", when " connection " or " connection ", may be interpreted as, this composition key element directly with other elements " continuous ", " connection " or "
It is coupled " contact, or presence alternatively forms key element between it.Conversely, wanting when referring to that an element is constituted with other
During element " directly continuous ", " being directly connected to " or " being directly coupled ", other elements for not having between it are construed to.Phase
Identical element is referred to symbol.As use in this manual, term " and/or " including in the project accordingly enumerated
Any one and one or more of all combinations.
In this manual, first, second grade term is used to illustrate various components, accessory, region, area etc., but this etc.
Component, accessory, region, area are not limited by the term such as this, and this is self-evident.The grade term is only used for a structure
Part, accessory, region, layer or part are different from other regions, layer or area.Therefore, the first component that below will be described, accessory,
Region, area, in the case of without departing from indication of the present invention, can censure second component, accessory, region, area.
In addition, the such as relative terms of " adjacent " or " adjacent " in accompanying drawing as illustrating, here can be used to remember
State the relation relative to other key elements of certain key element.Relative terms it is understood that in the accompanying drawings on the basis of drawing direction,
Further include other directions of element.If element is towards other directions (being rotated by 90 ° relative to other directions), in this theory
Relative property explanation used in bright book can be explained according to this.
Term used in this specification is used to illustrate particular implementation, of the invention not for limiting.Such as in this theory
As used in bright book, as long as not explicitly pointing out in sentence, then odd number form also may include the form of plural number.In addition, this theory
" including (comprises) " and/or " (comprising) that include " used in bright book, be especially determine refer to shape,
The presence of numeral, step, action, component, key element and/or its group, however not excluded that more than one other shapes, numeral, action, structure
Part, the presence of key element and/or its group or additional.
Embodiments of the present invention are illustrated with reference to the accompanying drawings, and the grade accompanying drawing roughly illustrates the preferable embodiment party of the present invention
Formula.In the accompanying drawings, for example, according to manufacturing technology and/or tolerance (tolerance), it is contemplated that the shape of diagram may be varied from.
Therefore, embodiments of the present invention shall not be construed as being defined in the given shape in the region for illustrating in this manual, for example, should
Including the change of manufacture shape caused by upper.
Fig. 1 is to show the figure for illustrating the substrate board treatment of the substrate processing method using same of the present invention.
As shown in figure 1, substrate board treatment may include chamber (100), gas supply department (200) and control unit (300).
Chamber (100) provides the space relative to Exterior capsule.Vacuum pump (140) air internal to chamber (100) enters
Row pumping.Chamber (100) may include heater (110), lifter pin (120) and baffle plate (130).Heater (110) can add hot radical
Plate (112).Control unit (300) can response temperature sensor (not shown) perceptual signal, control heater (110) temperature.
Substrate (112) can be loaded on heater (110) by means of elevator (120).Elevator (120) can make substrate in unloading
(112) lift from heater (110).
Chamber (100) can be separated into active region (132) and conversion zone (134) by baffle plate (130).Active region
(132) it is to provide the region of active gasess, the first reacting gas and the second reacting gas.Active region (132) can divide into top
Portion region (131) and bottom section (133).Top area (131) is plasma generation area.Active gasess, the first reaction gas
Body and the second reacting gas can cause plasmoid by means of high frequency electric source in top area (131).Bottom section (133)
It is the Mixed Zone of active gasess, the first reacting gas or the second reacting gas.Conversion zone (134) is the place of substrate (112)
Reason region.Substrate (112) can be etched by means of active gasess and first and second reacting gas or be realized by-product and sink
Product.
Gas supply department (200) may include active gasess supply department (210), reacting gas supply department (220), etching gas
Supply department (230).Active gasess may include ozone (O3) or oxygen (O2).Reacting gas may include hydrogen (H2), nitrogen (N2) or
Ammonia (NH3).Etching gas may include Fluohydric acid. (HF), Nitrogen trifluoride (NF3), sulfur hexafluoride (SF6).From gas supply department
(200) it is connected on the pipe arrangement of active region (132) and may be configured with the first to the 3rd valve (242,244,246).First valve
(242) can the control active gasess, reacting gas and the etching gas that provide to top area (131).Second valve (244) can be certainly
The direction of orientation top area (131) and the etching gas of bottom section (133) supply.3rd valve (246) can control the bottom of to
The etching gas that portion region (133) provides.If the first valve (242) and the second valve (244) are opened, the 3rd valve (246) is closed
Close, then etching gas can be supplied to top area (131).Below, the etching gas supplied to top area (131) is defined as
Top flowing etching gas.If the 3rd valve (246) is opened, the second valve (244) is closed, etching gas can be to bottom section
(133) supply.The etching gas supplied to bottom section (133) is defined as into flows etching gas.
Referring to Fig. 2 to Fig. 9, the substrate of the embodiment of the present invention of the substrate board treatment to make use of such composition
Processing method is illustrated.
Fig. 2 is the flow chart of the substrate processing method using same for showing embodiment of the present invention.
Fig. 3 to Fig. 7 is the process section of the substrate processing method using same of Fig. 2.
As shown in Figure 1 to Figure 3, on substrate (112) provide the first film (10) and the second thin film (20) (S10).First
Thin film (10) may include silicon oxide film.Second thin film (20) may include polysilicon or silicon nitride film.Polysilicon can adulterate electric conductivity
Impurity.The first film (10) and the second thin film (20) can be loaded on the heater (110) in chamber (100).
As shown in Figure 1, Figure 2 and shown in Fig. 4, flowing etching gas in top is provided on substrate (112), in the first film (10)
Top surface forms etch byproducts (30) (S20).Top flowing etching gas may include Nitrogen trifluoride.Nitrogen trifluoride can be to top
Region (131) provides.Fluorine composition can be separated in top area (131) from nitrogen, recombinate (recombination) with hydrogen again.
Therefore, the variable chemical conversion Fluohydric acid. of Nitrogen trifluoride.Compared with the polysilicon of the second thin film (20), Fluohydric acid. can be to the first film (10)
With higher etching selectivity.The Fluohydric acid. of plasmoid can form etching by-product in the top surface of the first film (10)
Thing (30).
Fig. 8 is the etching for comparing the silicon oxide film under the different supply flows for showing top flowing etching gas and polysilicon
The chart of amount.
As shown in figure 8, silicon oxide film can proportionally be removed with the supply flow of top flowing etching gas.But, if
Top flowing etching gas is supplied with more than 5SCCM to the conversion zone (134) of chamber (100), then polysilicon can flow with top
The supply flow of dynamic etching gas is inversely removed.Accordingly, with respect to polysilicon, top flowing etching gas can be to silicon oxide
Film has higher etching selectivity.
As shown in Figure 1, Figure 2 and shown in Fig. 5, plus hot substrate (112), remove etch byproducts (30) (S30).Heater (110)
Substrate (112) can be heated to more than about 100 DEG C.Etch byproducts (30) can be aoxidized by means of the heat energy of heater (110).
The etch byproducts (30) of oxidation can be ammonium silicofluoride ((NH4)2SiF6)。
As shown in Figure 1, Figure 2, shown in Fig. 6 and Fig. 7, flows etching gas (bottom flow are provided on substrate (112)
Etching gas), remove the second thin film (20) (S40).Flows etching gas may include Nitrogen trifluoride.Nitrogen trifluoride can
Supply from etching gas supply department (230) to bottom section (133).Nitrogen trifluoride can be dissociated respectively in bottom section (133)
(dissociation) into fluorine and nitrogen, to conversion zone (134) flowing.Relative to silicon oxide film, fluorine atom or molecule are to polycrystalline
Silicon has higher etching selectivity.The etching polymer (22) formed on second thin film (20) of Fig. 6 may not be present,
The etching reaction of the second thin film (20) in Fig. 6 and Fig. 7 can be realized continuously.
Fig. 9 is the etching for comparing the silicon oxide film under the different supply flows for showing flows etching gas and polysilicon
The chart of amount.
As shown in figure 9, polysilicon can proportionally be removed with the supply flow of flows etching gas.If conversely, bottom
Portion is flowed etching gas and is supplied to the conversion zone (134) of chamber (100) with more than 150SCCM, then silicon oxide film can be with bottom
The supply flow of flowing etching gas is inversely removed.Relative to silicon oxide film, flows etching gas can be to polysilicon
With higher etching selectivity.
The first film (10) and the second thin film (20) can adjust its etching selectivity in chamber (100) and remove.For example,
The first film (10) can be the space filling oxide-film of nand flash memory, and the second thin film (20) can be floating polysilicon.Fill in space
Oxide-film need to be removed to the level lower than floating polysilicon by means of top flowing etching gas.In addition, floating polysilicon can
Trickle live width is trimmed to by means of flows etching gas.
Therefore, the substrate processing method using same of embodiment of the present invention improves can productivity ratio and production yield.
Although it is not shown, but flows etching gas can be provided on substrate (112), remove the second thin film (20)
(S40), flowing etching gas in top is provided on the substrate (112), in the top surface of the first film (10) etching by-product is formed
Thing (30) (S20) after, by heat treatment step remove etch byproducts (30) (S30).
Present invention mentioned above is not limited to aforementioned embodiments and accompanying drawing, without departing from the present invention technological thought it
During scope, various displacements, deformation and change can be carried out, this is self-evident for those skilled in the art.
【Symbol description】
10 the first films
20 second thin film
22 etching polymers
30 etch byproducts
100 chambers
110 heaters
112 substrates
120 elevator
130 baffle plates
131 top areas
132 active regions
133 bottom sections
134 conversion zones
140 pumps
200 gas supply departments
300 control units
S10 steps
S20 steps
S30 steps
S40 steps
Claims (7)
1. a kind of substrate processing method using same, it is characterised in that include：
Substrate is loaded into step, and the substrate for being formed with the first film and the second thin film is loaded into within the chamber；
Thin film removal step, to the within the chamber top flowing one of etching gas or flows etching gas are provided, and are removed
One of the first film and second thin film；And
Remaining thin film removal step, provides to the within the chamber and is remained in the top flowing etching gas or the flows etching gas
Remaining one, removes remaining one in the first film and second thin film；
It is described to provide remaining one in the top flowing etching gas or the flows etching gas, remove the first film
With remaining one in second thin film, be that it is provided in etching gas or flows etching gas at the top of the offer
One, remove what is implemented after one of the first film and second thin film；
The top flowing etching gas and the flows etching gas include undergoing the Nitrogen trifluoride of remote plasma process；
The first film and the second thin film include respectively silicon oxide film and polysilicon or silicon nitride film.
2. claim 1 as described in substrate processing method using same, wherein,
The top flowing etching gas forms etch byproducts on the first film or second thin film.
3. claim 2 as described in substrate processing method using same, wherein,
Further include the step of removing the etch byproducts.
4. claim 3 as described in substrate processing method using same, wherein,
The removal step of the etch byproducts includes the heat treatment step of the substrate.
5. claim 1 as described in substrate processing method using same, wherein,
The Nitrogen trifluoride mixes with reacting gas or active gasess and is provided in the within the chamber.
6. claim 5 as described in substrate processing method using same, wherein,
The reacting gas includes hydrogen or nitrogen.
7. claim 5 as described in substrate processing method using same, wherein,
The active gasess include oxygen.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120115427A KR101402231B1 (en) | 2012-10-17 | 2012-10-17 | method for treating substrate |
| KR10-2012-0115427 | 2012-10-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103779183A CN103779183A (en) | 2014-05-07 |
| CN103779183B true CN103779183B (en) | 2017-04-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310488001.0A Active CN103779183B (en) | 2012-10-17 | 2013-10-17 | Method for treating substrate |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101402231B1 (en) |
| CN (1) | CN103779183B (en) |
| TW (1) | TWI497590B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101874822B1 (en) * | 2016-04-01 | 2018-07-06 | 주식회사 테스 | Method for selective etching of silicon oxide film |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3811602B2 (en) * | 2000-09-01 | 2006-08-23 | 大日本スクリーン製造株式会社 | Substrate surface treatment method and substrate surface treatment apparatus |
| KR100573929B1 (en) * | 2001-12-14 | 2006-04-26 | (주)에이피엘 | Apparatus and method for surface cleaning using plasma |
| US7111629B2 (en) * | 2001-01-08 | 2006-09-26 | Apl Co., Ltd. | Method for cleaning substrate surface |
| KR100580584B1 (en) * | 2004-05-21 | 2006-05-16 | 삼성전자주식회사 | Method for cleaning a surface of a remote plasma generating tube and method and apparatus for processing a substrate using the same |
| KR101566922B1 (en) * | 2009-02-16 | 2015-11-09 | 삼성전자주식회사 | Method for forming metal silicide layer of semiconductor device combining just dry etching and chemical dry etching |
| US20110061810A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
-
2012
- 2012-10-17 KR KR1020120115427A patent/KR101402231B1/en active IP Right Grant
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2013
- 2013-09-09 TW TW102132423A patent/TWI497590B/en active
- 2013-10-17 CN CN201310488001.0A patent/CN103779183B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201417174A (en) | 2014-05-01 |
| KR101402231B1 (en) | 2014-06-02 |
| CN103779183A (en) | 2014-05-07 |
| KR20140049311A (en) | 2014-04-25 |
| TWI497590B (en) | 2015-08-21 |
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