CN103778964A - 一种NAND Flash烧写数据的处理、使用方法及装置、系统 - Google Patents
一种NAND Flash烧写数据的处理、使用方法及装置、系统 Download PDFInfo
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- CN103778964A CN103778964A CN201310746872.8A CN201310746872A CN103778964A CN 103778964 A CN103778964 A CN 103778964A CN 201310746872 A CN201310746872 A CN 201310746872A CN 103778964 A CN103778964 A CN 103778964A
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000012545 processing Methods 0.000 title claims abstract description 39
- 230000008439 repair process Effects 0.000 claims description 35
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- 238000003672 processing method Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 5
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/20—Initialising; Data preset; Chip identification
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0751—Error or fault detection not based on redundancy
- G06F11/0754—Error or fault detection not based on redundancy by exceeding limits
- G06F11/076—Error or fault detection not based on redundancy by exceeding limits by exceeding a count or rate limit, e.g. word- or bit count limit
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/40—Specific encoding of data in memory or cache
- G06F2212/403—Error protection encoding, e.g. using parity or ECC codes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7209—Validity control, e.g. using flags, time stamps or sequence numbers
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Quality & Reliability (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (22)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310746872.8A CN103778964B (zh) | 2013-12-30 | 2013-12-30 | 一种NAND Flash烧写数据的处理、使用方法及装置、系统 |
TW103102667A TWI486957B (zh) | 2013-12-30 | 2014-01-24 | Nand快閃記憶體燒錄資料的處理、使用方法及裝置、運行系統 |
US14/584,653 US9524212B2 (en) | 2013-12-30 | 2014-12-29 | Method, device and operating system for processing and using burn data of NAND flash |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310746872.8A CN103778964B (zh) | 2013-12-30 | 2013-12-30 | 一种NAND Flash烧写数据的处理、使用方法及装置、系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103778964A true CN103778964A (zh) | 2014-05-07 |
CN103778964B CN103778964B (zh) | 2016-08-17 |
Family
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CN201310746872.8A Expired - Fee Related CN103778964B (zh) | 2013-12-30 | 2013-12-30 | 一种NAND Flash烧写数据的处理、使用方法及装置、系统 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9524212B2 (zh) |
CN (1) | CN103778964B (zh) |
TW (1) | TWI486957B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104794019A (zh) * | 2015-04-17 | 2015-07-22 | 深圳市江波龙电子有限公司 | 一种嵌入式存储器的数据保护方法及装置 |
CN105653469A (zh) * | 2015-12-30 | 2016-06-08 | 深圳Tcl数字技术有限公司 | 数据写入方法和装置 |
CN106156639A (zh) * | 2016-06-28 | 2016-11-23 | 北京小米移动软件有限公司 | 数据分区加密方法及装置 |
CN106610791A (zh) * | 2015-10-22 | 2017-05-03 | 慧荣科技股份有限公司 | 数据储存装置及其数据维护方法 |
CN108614666A (zh) * | 2016-12-09 | 2018-10-02 | 北京京存技术有限公司 | 基于NANDflash的数据块处理方法和装置 |
CN111324281A (zh) * | 2018-12-14 | 2020-06-23 | 北京兆易创新科技股份有限公司 | 一种存储器及其控制方法和装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111638889B (zh) * | 2020-06-01 | 2023-05-05 | 杭州万高科技股份有限公司 | 一种烧写器及一种防错的烧写方法 |
Citations (6)
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CN1389790A (zh) * | 2001-06-04 | 2003-01-08 | 三星电子株式会社 | 闪速存储器管理方法 |
JP2007179479A (ja) * | 2005-12-28 | 2007-07-12 | Tdk Corp | メモリコントローラおよびフラッシュメモリシステム |
US20070208913A1 (en) * | 2006-03-02 | 2007-09-06 | Takashi Oshima | Method of controlling memory system |
CN101162608A (zh) * | 2006-10-10 | 2008-04-16 | 北京华旗资讯数码科技有限公司 | 闪存的存储块的标识方法 |
US20080183949A1 (en) * | 2007-01-26 | 2008-07-31 | Micron Technology, Inc. | Flash storage partial page caching |
US20100287327A1 (en) * | 2009-05-06 | 2010-11-11 | Via Telecom, Inc. | Computing systems and methods for managing flash memory device |
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BE396680A (zh) * | 1931-07-30 | |||
KR100397316B1 (ko) * | 1998-01-21 | 2003-09-06 | 비.유.지., 인크. | 기억 장치, 암호화ㆍ복호화 장치 및 불휘발성 메모리의액세스 방법 |
JP3078530B2 (ja) * | 1998-10-12 | 2000-08-21 | ローム株式会社 | 不揮発性半導体メモリic及びそのバーンインテスト方法 |
CN100347685C (zh) * | 2002-08-29 | 2007-11-07 | 松下电器产业株式会社 | 用于将数据写入快闪存储设备的半导体存储器的装置和方法 |
US6845061B2 (en) * | 2003-02-05 | 2005-01-18 | Megawin Technology Co., Ltd. | Method for quickly detecting the state of a nonvolatile storage medium |
TWI249670B (en) * | 2004-04-29 | 2006-02-21 | Mediatek Inc | System and method capable of sequentially writing a flash memory |
JP4889961B2 (ja) * | 2005-05-06 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路及びそのバーインテスト方法 |
JP2007133541A (ja) * | 2005-11-09 | 2007-05-31 | Tokyo Electron Device Ltd | 記憶装置、メモリ管理装置、メモリ管理方法及びプログラム |
CN101288056A (zh) * | 2006-03-13 | 2008-10-15 | 松下电器产业株式会社 | 闪速存储器用的存储控制器 |
WO2008001543A1 (fr) * | 2006-06-27 | 2008-01-03 | Advantest Corporation | Appareil de test de semi-conducteur et procédé de test de mémoire semi-conductrice |
KR100843208B1 (ko) * | 2006-11-02 | 2008-07-02 | 삼성전자주식회사 | 반도체 칩 패키지 및 그 테스트 방법 |
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TWI450099B (zh) * | 2009-12-10 | 2014-08-21 | Phison Electronics Corp | 模擬可覆寫光碟裝置的儲存系統、控制器、電腦系統及方法 |
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TW201312349A (zh) * | 2011-09-09 | 2013-03-16 | Fluiditech Ip Ltd | 回收重建記憶體空間方法 |
TWI489474B (zh) * | 2011-10-25 | 2015-06-21 | Silicon Motion Inc | 內嵌閃存卡燒機方法以及測試板、以及內嵌閃存卡 |
CN103310842A (zh) * | 2012-03-06 | 2013-09-18 | 富泰华工业(深圳)有限公司 | 烧录系统及烧录方法 |
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2013
- 2013-12-30 CN CN201310746872.8A patent/CN103778964B/zh not_active Expired - Fee Related
-
2014
- 2014-01-24 TW TW103102667A patent/TWI486957B/zh not_active IP Right Cessation
- 2014-12-29 US US14/584,653 patent/US9524212B2/en active Active
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CN1389790A (zh) * | 2001-06-04 | 2003-01-08 | 三星电子株式会社 | 闪速存储器管理方法 |
JP2007179479A (ja) * | 2005-12-28 | 2007-07-12 | Tdk Corp | メモリコントローラおよびフラッシュメモリシステム |
US20070208913A1 (en) * | 2006-03-02 | 2007-09-06 | Takashi Oshima | Method of controlling memory system |
CN101162608A (zh) * | 2006-10-10 | 2008-04-16 | 北京华旗资讯数码科技有限公司 | 闪存的存储块的标识方法 |
US20080183949A1 (en) * | 2007-01-26 | 2008-07-31 | Micron Technology, Inc. | Flash storage partial page caching |
US20100287327A1 (en) * | 2009-05-06 | 2010-11-11 | Via Telecom, Inc. | Computing systems and methods for managing flash memory device |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104794019A (zh) * | 2015-04-17 | 2015-07-22 | 深圳市江波龙电子有限公司 | 一种嵌入式存储器的数据保护方法及装置 |
CN104794019B (zh) * | 2015-04-17 | 2017-12-05 | 深圳市江波龙电子有限公司 | 一种嵌入式存储器的数据保护方法及装置 |
CN106610791A (zh) * | 2015-10-22 | 2017-05-03 | 慧荣科技股份有限公司 | 数据储存装置及其数据维护方法 |
CN106610791B (zh) * | 2015-10-22 | 2019-04-12 | 慧荣科技股份有限公司 | 数据储存装置及其数据维护方法 |
CN105653469A (zh) * | 2015-12-30 | 2016-06-08 | 深圳Tcl数字技术有限公司 | 数据写入方法和装置 |
CN105653469B (zh) * | 2015-12-30 | 2018-11-02 | 深圳Tcl数字技术有限公司 | 数据写入方法和装置 |
CN106156639A (zh) * | 2016-06-28 | 2016-11-23 | 北京小米移动软件有限公司 | 数据分区加密方法及装置 |
CN108614666A (zh) * | 2016-12-09 | 2018-10-02 | 北京京存技术有限公司 | 基于NANDflash的数据块处理方法和装置 |
CN108614666B (zh) * | 2016-12-09 | 2021-10-26 | 北京兆易创新科技股份有限公司 | 基于NAND flash的数据块处理方法和装置 |
CN111324281A (zh) * | 2018-12-14 | 2020-06-23 | 北京兆易创新科技股份有限公司 | 一种存储器及其控制方法和装置 |
CN111324281B (zh) * | 2018-12-14 | 2024-02-06 | 兆易创新科技集团股份有限公司 | 一种存储器及其控制方法和装置 |
Also Published As
Publication number | Publication date |
---|---|
US9524212B2 (en) | 2016-12-20 |
TW201526007A (zh) | 2015-07-01 |
CN103778964B (zh) | 2016-08-17 |
US20150186211A1 (en) | 2015-07-02 |
TWI486957B (zh) | 2015-06-01 |
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Effective date of registration: 20210226 Address after: 200232 20th floor, building C, 275 Ruiping Road, Xuhui District, Shanghai Patentee after: MediaTek software (Shanghai) Co.,Ltd. Patentee after: MEDIATEK Inc. Address before: 200232 20th floor, building C, 275 Ruiping Road, Xuhui District, Shanghai Patentee before: MediaTek software (Shanghai) Co.,Ltd. Patentee before: MSTAR SEMICONDUCTOR Inc. Effective date of registration: 20210226 Address after: No.1, Duhang 1st Road, Hsinchu City, Hsinchu Science Park, Taiwan, China Patentee after: MEDIATEK Inc. Address before: 200232 20th floor, building C, 275 Ruiping Road, Xuhui District, Shanghai Patentee before: MediaTek software (Shanghai) Co.,Ltd. Patentee before: MEDIATEK Inc. |
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