CN103777813B - TFT touch screen and manufacturing method thereof - Google Patents
TFT touch screen and manufacturing method thereof Download PDFInfo
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- CN103777813B CN103777813B CN201310746532.5A CN201310746532A CN103777813B CN 103777813 B CN103777813 B CN 103777813B CN 201310746532 A CN201310746532 A CN 201310746532A CN 103777813 B CN103777813 B CN 103777813B
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- tft substrate
- tft
- touch screen
- inductive layer
- magnetron sputtering
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Abstract
The invention relates to a TFT touch screen and a manufacturing method of the TFT touch screen. The TFT touch screen comprises a TFT substrate and an induction layer overlapping the TFT substrate. The induction layer directly overlaps the TFT substrate so that the TFT touch screen can be obtained. Compared with a traditional TFT touch screen which is obtained by overlapping the induction layer and a glass panel and then enabling the TFT substrate to be attached to the glass panel through the attaching process, the TFT touch screen is small in thickness and beneficial for enabling an electronic product with the TFT touch screen to be developed in the light and thin direction.
Description
Technical field
The present invention relates to touch screen technology field, more particularly to a kind of TFT touch screen and preparation method thereof.
Background technology
Current TFT（Thin-Film Transistor）The structure of touch-screen generally comprises glass panel, inductive layer and TFT
Substrate.The preparation of this TFT touch screen is usually coated with inductive layer on glass panels, then again by TFT substrate and glass surface
Plate fit obtaining TFT touch screen.
At present, electronic product is toward lightening trend development, the requirement more and more higher lightening for touch-screen.It is existing
The thickness of TFT touch screen is still difficult to meet lightening requirement.
Also, when preparing the TFT touch screen of said structure, prior art can only at a high temperature of 350 DEG C~450 DEG C ability
Be coated with inductive layer on glass panels, and in general, the liquid crystal molecule in TFT substrate and frame can only resistance to 150 DEG C with
Under temperature.Therefore, this method for preparing TFT touch screen can to a certain extent damage TFT substrate, so as to be touched to TFT
The performance of screen produces harmful effect.
Although scientific research personnel is improving the liquid crystal molecule and the resistant to elevated temperatures characteristic of frame of TFT substrate, current technology is also
It is immature, not yet being capable of popularization and application.
The content of the invention
Based on this, it is necessary to provide a kind of thickness less TFT touch screen.
A kind of TFT touch screen, including TFT substrate and the inductive layer being laminated in the TFT substrate.
Wherein in one embodiment, the material of the inductive layer is indium tin oxide.
Wherein in one embodiment, the thickness of the inductive layer is 90 nanometers~110 nanometers.
Wherein in one embodiment, the sheet resistance of the TFT substrate is less than 60 ohm-sqs.
A kind of preparation method of TFT touch screen, comprises the following steps：
TFT substrate is provided；And
Inductive layer is prepared in the TFT substrate using magnetron sputtering, the TFT touch screen is obtained.
Wherein in one embodiment, the step of the use magnetron sputtering prepares inductive layer in the TFT substrate
Before, also including washing the TFT substrate the step of, include the step of wash the TFT substrate using successively
Pure water and alkali lye are washed, and then carry out two fluid sprays, ultrapure Water spray and high-pressure spraying successively again.
Wherein in one embodiment, the step of the use magnetron sputtering prepares inductive layer in the TFT substrate in,
The temperature of the TFT substrate is 100 DEG C~120 DEG C.
Wherein in one embodiment, the step of the use magnetron sputtering prepares inductive layer in the TFT substrate in,
The vacuum of the magnetron sputtering is 2.5 × 10-1Pa~3.50 × 10-3Pa。
Wherein in one embodiment, the step of the use magnetron sputtering prepares inductive layer in the TFT substrate in,
The voltage of the magnetron sputtering is 300V~350V, power 7500W~9000W.
Wherein in one embodiment, the step of the use magnetron sputtering prepares inductive layer in the TFT substrate in,
Oxygen and argon gas are passed through, the flow of the oxygen is 12sccm, and the flow of argon gas is 900sccm.
Inductive layer is directly laminated in and above-mentioned TFT touch screen is obtained in TFT substrate, and glass is laminated in compared to traditional inductive layer
TFT substrate is fitted to attaching process the TFT touch screen obtained on glass panel again, its thickness is smaller, is conducive on panel
Electronic product using the TFT touch screen develops toward lightening direction.
Brief description of the drawings
Fig. 1 is the structural representation of the TFT touch screen of an implementation method；
Fig. 2 is the flow chart of the preparation method of the TFT touch screen of an implementation method.
Specific embodiment
To enable the above objects, features and advantages of the present invention more obvious understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.Elaborate many details in order to fully understand this hair in the following description
It is bright.But the present invention can be implemented with being much different from other manner described here, and those skilled in the art can be not
Similar improvement is done in the case of running counter to intension of the present invention, therefore the present invention is not limited by following public specific implementation.
Refer to Fig. 1, the TFT touch screen 100 of an implementation method, including TFT substrate 20 and be laminated in TFT substrate 20
Inductive layer 40.
TFT substrate 20 includes LCDs（It is not shown）With the frame around LCDs（It is not shown）.
Preferably, the sheet resistance of TFT substrate 20 is less than 60 ohm-sqs.
The material of inductive layer 40 is conductive material.Conductive material can be metal, indium tin oxide（ITO）, mix the oxygen of aluminium
Change zinc（AZO）And indium-doped zinc oxide（IZO）, preferably ITO.
Inductive layer 40 is laminated on the LCDs of TFT substrate 20.
Preferably, the thickness of inductive layer 40 is 90 nanometers~110 nanometers, so that the light transmittance of inductive layer 40 is higher, it is ensured that
TFT substrate 20 has preferable light transmission.
Inductive layer 40 is directly laminated in and above-mentioned TFT touch screen 100 is obtained in TFT substrate 20, compared to traditional sensing layer by layer
Be laminated on glass panel again being fitted to TFT substrate with attaching process the TFT touch screen obtained on glass panel, its thickness compared with
It is small, be conducive to developing toward lightening direction using the electronic product of the TFT touch screen 100.
Fig. 2 is referred to, the preparation method of the TFT touch screen of an implementation method, for preparing above-mentioned TFT touch screen 100, is wrapped
Include following steps.
Step S110：TFT substrate is provided.
In order to ensure TFT substrate clean, also including being cleaned to TFT substrate the step of.
Preferably, the step of being washed to TFT substrate includes being washed with pure water and alkali lye successively, then again successively
Two fluid sprays, ultrapure Water spray and high-pressure spraying are carried out, to ensure that TFT substrate is cleaned.
Alkali lye is alkaline detergent, such as washing powder solution, liquid detergent solution.
High-pressure spraying refers to high-pressure spraying ultra-pure water, and pressure is preferably 1.5kg/cm2, fully to remove in TFT substrate
The pollutants such as dust, greasy dirt, but TFT substrate is not damaged.
After TFT substrate is cleaned up, cold wind and heated-air drying are sequentially passed through, then check TFT substrate surface cleaning matter
Amount, it is qualified, it is standby.Cold wind and heated-air drying are used successively, TFT substrate risk of rupture is advantageously reduced, and protect TFT substrate.
Step S120：Inductive layer is prepared using magnetron sputtering on the tft substrate.
Clean, dry TFT substrate is put on the specimen holder of magnetron sputtering chamber, magnetron sputtering chamber is evacuated to
With certain vacuum degree, and TFT substrate is heated to uniform temperature, is passed through oxygen and argon gas, start magnetron sputtering plating, in TFT
Inductive layer is prepared on substrate.
The material of inductive layer is conductive material.Conductive material can be metal, indium tin oxide（ITO）, mix the oxidation of aluminium
Zinc（AZO）And indium-doped zinc oxide（IZO）, preferably ITO.
It is preferred that preparing inductive layer on the tft substrate using magnetically controlled DC sputtering.
Preferably, the vacuum of magnetron sputtering chamber is 2.5 × 10-1Pa~3.50 × 10-3Pa.Under the vacuum
Plated film in TFT substrate, formation is laminated in inductive layer in TFT substrate, is conducive to protecting TFT substrate, reduces TFT substrate rupture wind
Danger.
Preferably, start plated film after TFT substrate being heated into 100 DEG C~120 DEG C, maintain TFT substrate permanent in coating process
Temperature.Less than 150 DEG C of high temperature is resistant to due to TFT substrate, plated film is carried out at 100 DEG C~120 DEG C, TFT substrate will not caused
Damage.
Preferably, TFT substrate is heated to 100 DEG C~120 DEG C from room temperature in 1400 seconds.
Preferably, in magnetron sputtering process, the voltage of magnetron sputtering is 300V~350V, power 7500W~9000W.
Plated film is carried out under above-mentioned voltage and power, is conducive to preparing the film that compactness is good, defect is small.
The flow of oxygen is preferably 12ccm2, the flow of argon gas is preferably 900ccm2, to improve preparation efficiency.Argon gas is used
High-purity argon gas, the i.e. argon gas using purity more than 99.999%.
Preferably, the speed of service of TFT substrate is 0.5m/min.
The thickness control of inductive layer of the time of plated film according to needed for.Coating process is thick with film thickness gauge monitor in real time film layer
Degree.
Directly plated film forms the inductive layer being laminated in TFT substrate to the preparation method of above-mentioned TFT touch screen on the tft substrate
TFT substrate is obtained, the thickness of the TFT substrate of this structure is smaller, and eliminates glass panel, be conducive to mitigating the weight of product
Amount, is conducive to developing towards lightening direction using the electronic product of the TFT touch screen.
Also, the preparation method process is simple of above-mentioned TFT touch screen, the step of reduce laminating, is conducive to protecting TFT bases
Plate, reduces the low yield that laminating step is brought, and improves and prepares yield.It is additionally, since and eliminates a glass panel and one
Individual step, advantageously reduces preparation cost, and low-carbon environment-friendly.
In the preparation method of existing TFT touch screen, because TFT substrate is more fragile, typically will not directly in TFT bases
Plated film on plate, but plated film on glass panels, then TFT substrate is carried out with the glass panel for having plated film the step of by fitting
Laminating.The preparation method of above-mentioned TFT touch screen, by using suitable sputtering technology, is 2.5 × 10 in vacuum-1Pa~3.50
×10-3Pa, TFT substrate temperature are 100 DEG C~120 DEG C, the voltage of magnetron sputtering for 300V~350V and power 7500W~
Plated film is carried out under 9000W, inductive layer is formed, is conducive to protecting TFT substrate, prevent TFT substrate from rupturing and preventing high temperature by TFT bases
The liquid crystal of plate burns out.
It is expanded on further below by way of specific embodiment.
Embodiment 1
Prepare TFT touch screen
The 1st, the TFT substrate that sheet resistance is 55 ohm-sqs is provided, TFT is washed with pure water and alkali lye successively, so
Carry out two fluid sprays, ultrapure Water spray and high-pressure spraying successively again afterwards, finally sequentially pass through cold wind and heated-air drying, check
TFT substrate surface cleaning, it is standby；
2nd, clean, dry TFT substrate is put on the specimen holder of magnetron sputtering chamber, magnetron sputtering chamber is vacuumized
To 2.5 × 10-1Pa, and TFT substrate is heated to 120 DEG C in 1400 seconds, and TFT substrate constant temperature is kept, it is passed through oxygen and argon
Gas, the flow of oxygen is 12ccm2, the flow of argon gas is 900ccm2, the speed of service of TFT substrate is 0.5m/min, is in voltage
300V, to start magnetron sputtering plating under 7500W, plated film 120 seconds prepares inductive layer to power on the tft substrate.The material of inductive layer
Expect to be indium tin oxide.
After tested, the sheet resistance of inductive layer is 50~58 ohm-sqs, and thickness is 95 nanometers, and light transmittance is 93%, L=
39.3, a=-1.7, b=-5.0, △ E≤0.5 are qualified.
Embodiment 2
Prepare TFT touch screen
The 1st, the TFT substrate that sheet resistance is 50 ohm-sqs is provided, TFT is washed with pure water and alkali lye successively, so
Carry out two fluid sprays, ultrapure Water spray and high-pressure spraying successively again afterwards, finally sequentially pass through cold wind and heated-air drying, check
TFT substrate surface cleaning, it is standby；
2nd, clean, dry TFT substrate is put on the specimen holder of magnetron sputtering chamber, magnetron sputtering chamber is vacuumized
To 3.50 × 10-3, and TFT substrate is heated to 100 DEG C in 1400 seconds, and TFT substrate constant temperature is kept, it is passed through oxygen and argon
Gas, the flow of oxygen is 12ccm2, the flow of argon gas is 900ccm2, the speed of service of TFT substrate is 0.5m/min, is in voltage
350V, to start magnetron sputtering plating under 9000W, plated film 150 seconds prepares inductive layer to power on the tft substrate.The material of inductive layer
Expect to be indium tin oxide.
After tested, the sheet resistance of inductive layer is 45-53 ohm-sqs, and thickness is 110 nanometers, and light transmittance is 92%, L=
39.1, a=-1.6, b=-4.8, △ E≤0.5 are qualified.
Embodiment 3
Prepare TFT touch screen
The 1st, the TFT substrate that sheet resistance is 50 ohm-sqs is provided, TFT is washed with pure water and alkali lye successively, so
Carry out two fluid sprays, ultrapure Water spray and high-pressure spraying successively again afterwards, finally sequentially pass through cold wind and heated-air drying, check
TFT substrate surface cleaning, it is standby；
2nd, clean, dry TFT substrate is put on the specimen holder of magnetron sputtering chamber, magnetron sputtering chamber is vacuumized
To 3.0 × 10-2, and TFT substrate is heated to 110 DEG C in 1400 seconds, and TFT substrate constant temperature is kept, oxygen and argon gas are passed through,
The flow of oxygen is 12ccm2, the flow of argon gas is 900ccm2, the speed of service of TFT substrate is 0.5m/min, is in voltage
320V, to start magnetron sputtering plating under 8000W, plated film 100 seconds prepares inductive layer to power on the tft substrate.The material of inductive layer
Expect to be indium tin oxide.
After tested, the sheet resistance of inductive layer is 48-55 ohm-sqs, and thickness is 90 nanometers, and light transmittance is 95%, L=
38.9, a=-1.8, b=-5.1, △ E≤0.5 are qualified.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Shield scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (5)
1. a kind of preparation method of TFT touch screen, it is characterised in that comprise the following steps：
TFT substrate is provided；And
Inductive layer is prepared in the TFT substrate using magnetron sputtering, the TFT touch screen is obtained；
The material of the inductive layer is indium tin oxide；
The sheet resistance of the TFT substrate is less than 60 ohm-sqs；
In the step of use magnetron sputtering prepares inductive layer in the TFT substrate, the temperature of the TFT substrate is 100
DEG C~120 DEG C；
The TFT substrate includes LCDs and the frame around the LCDs；
The thickness of the inductive layer is 90 nanometers~110 nanometers.
2. the preparation method of TFT touch screen according to claim 1, it is characterised in that exist in the use magnetron sputtering
Before the step of preparing inductive layer in the TFT substrate, also including being washed to the TFT substrate the step of, to the TFT
The step of substrate is washed includes being washed with pure water and alkali lye successively, then carries out two fluid sprays, ultrapure successively again
Water spray and high-pressure spraying.
3. the preparation method of TFT touch screen according to claim 1, it is characterised in that the use magnetron sputtering is in institute
Stating in the step of prepared in TFT substrate inductive layer, the vacuum of the magnetron sputtering is 2.5 × 10-1Pa~3.50 × 10-3Pa。
4. the preparation method of TFT touch screen according to claim 1, it is characterised in that the use magnetron sputtering is in institute
In stating the step of prepared in TFT substrate inductive layer, the voltage of the magnetron sputtering is 300V~350V, power 7500W~
9000W。
5. the preparation method of TFT touch screen according to claim 1, it is characterised in that the use magnetron sputtering is in institute
Stating in the step of prepared in TFT substrate inductive layer, be passed through oxygen and argon gas, the flow of the oxygen is 12sccm, the stream of argon gas
It is 900sccm to measure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310746532.5A CN103777813B (en) | 2013-12-30 | 2013-12-30 | TFT touch screen and manufacturing method thereof |
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| CN201310746532.5A CN103777813B (en) | 2013-12-30 | 2013-12-30 | TFT touch screen and manufacturing method thereof |
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| CN103777813B true CN103777813B (en) | 2017-05-24 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000637A (en) * | 2012-12-04 | 2013-03-27 | 江西沃格光电科技有限公司 | Coated thin film transistor (TFT) substrate, preparation method thereof and TFT |
| CN103199061A (en) * | 2013-04-07 | 2013-07-10 | 江西沃格光电科技有限公司 | Manufacturing method of anti-static thin film transistor (TFT) substrate |
| CN103230864A (en) * | 2013-04-03 | 2013-08-07 | 江西沃格光电科技有限公司 | Manufacturing method of anti-static TFT substrate |
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2013
- 2013-12-30 CN CN201310746532.5A patent/CN103777813B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000637A (en) * | 2012-12-04 | 2013-03-27 | 江西沃格光电科技有限公司 | Coated thin film transistor (TFT) substrate, preparation method thereof and TFT |
| CN103230864A (en) * | 2013-04-03 | 2013-08-07 | 江西沃格光电科技有限公司 | Manufacturing method of anti-static TFT substrate |
| CN103199061A (en) * | 2013-04-07 | 2013-07-10 | 江西沃格光电科技有限公司 | Manufacturing method of anti-static thin film transistor (TFT) substrate |
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