TWM474967U - High transmittance vanishing glass used in OGS - Google Patents
High transmittance vanishing glass used in OGS Download PDFInfo
- Publication number
- TWM474967U TWM474967U TW102216184U TW102216184U TWM474967U TW M474967 U TWM474967 U TW M474967U TW 102216184 U TW102216184 U TW 102216184U TW 102216184 U TW102216184 U TW 102216184U TW M474967 U TWM474967 U TW M474967U
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- glass
- layer
- ruthenium
- substrate
- Prior art date
Links
Abstract
Description
本實用新型涉及觸控式螢幕行業，主要應用在電容屏方面，主要是指一種消影高透過率OGS用玻璃。The utility model relates to a touch screen industry, which is mainly applied to a capacitive screen, and mainly relates to a glass for eliminating high transmittance OGS.
現有單片式玻璃觸控面板(One glass solution，簡稱OGS)用玻璃的一種結構為：玻璃(glass)/絕緣邊框(BM)/氧化銦錫(ITO)導電層。這種結構在蝕刻成圖案以後，ITO電極線看的非常明顯，影響觸控式螢幕的外觀。One type of glass for the one-piece glass touch panel (OGS) is a glass/insulated bezel (BM)/indium tin oxide (ITO) conductive layer. After the structure is etched into a pattern, the ITO electrode line is very obvious, which affects the appearance of the touch screen.
另一種OGS用ITO導電玻璃的結構為：玻璃(glass)/絕緣邊框(BM)/消影層/氧化銦錫(ITO)導電層。其中ITO是導電層，作為觸控式螢幕的電極及傳感層。消影層為Nb2 O5 /SiO2 ，其主要功能是消除ITO蝕刻後的痕跡，有ITO和沒有ITO的地方的膜層反射率在0.5%以內，這樣在人的視覺來看，在顯示幕上不容易看見ITO線條。Another structure of ITO conductive glass for OGS is: glass / insulating frame (BM) / shadow layer / indium tin oxide (ITO) conductive layer. The ITO is a conductive layer and serves as an electrode and a sensing layer of the touch screen. The shadowing layer is Nb 2 O 5 /SiO 2 , its main function is to eliminate the traces after ITO etching, and the reflectivity of the film with ITO and no ITO is within 0.5%, so that in the human visual view, it is displayed. It is not easy to see ITO lines on the screen.
但是以上兩種玻璃在做成觸控式螢幕後，第一種的ITO線條能夠很清晰的看到，第二種雖然ITO線條經過消影層已經淡化，但是兩種產品在太陽強光下，由於整個膜層的透過率比較低，只有88%左右，如果電阻值更低的話，透過率還會更低，導致反射率高，因此在強光下很難看清楚螢幕上的圖案。However, after the above two types of glass are made into a touch screen, the first type of ITO line can be clearly seen. The second type of ITO line has been faded through the shadow layer, but the two products are under the sun light. Since the transmittance of the entire film layer is relatively low, it is only about 88%. If the resistance value is lower, the transmittance is lower, resulting in a higher reflectance, so it is difficult to see the pattern on the screen under strong light.
傳統觸控式螢幕是由兩片玻璃對貼組成一片玻璃做為觸摸感測器，一片玻璃做為保護玻璃，稱為G/G結構，這樣增加了觸控式螢幕的 厚度和重量。The traditional touch screen is composed of two glass pairs to form a piece of glass as a touch sensor, and a piece of glass as a protective glass, called a G/G structure, which increases the touch screen. Thickness and weight.
本實用新型要解決上述問題在於提供了一種減輕了重量，提高了透光率，消除了ITO導電線條底影的玻璃。The problem to be solved by the present invention is to provide a glass which reduces the weight, improves the light transmittance, and eliminates the base of the ITO conductive line.
為解決上述問題，本實用新型通過以下方案來實現：一種消影高透過率OGS用玻璃，該OGS用玻璃為單片玻璃結構，包括基板及依次鍍於基板上表面的絕緣邊框、五氧化二鈮膜、二氧化矽膜、ITO導電膜，及鍍於基板下表面的五氧化二鈮膜、二氧化矽膜、五氧化二鈮膜、二氧化矽膜；或依次鍍於基板上表面的五氧化二鈮膜、二氧化矽膜、五氧化二鈮膜、二氧化矽膜、絕緣邊框、ITO導電膜，及鍍於基板下表面的五氧化二鈮膜、二氧化矽膜、五氧化二鈮膜、二氧化矽膜；或依次鍍於基板上表面的五氧化二鈮膜、二氧化矽膜、五氧化二鈮膜、二氧化矽膜、ITO導電膜、絕緣邊框，及鍍於基板下表面的五氧化二鈮膜、二氧化矽膜、五氧化二鈮膜、二氧化矽膜。In order to solve the above problems, the present invention is realized by the following scheme: a glass for eliminating high transmittance OGS, the glass for OGS is a single-piece glass structure, comprising a substrate and an insulating frame sequentially coated on the upper surface of the substrate, and pentoxide a ruthenium film, a ruthenium dioxide film, an ITO conductive film, and a ruthenium pentoxide film, a ruthenium dioxide film, a ruthenium pentoxide film, a ruthenium dioxide film, which are plated on the lower surface of the substrate; or five layers sequentially coated on the upper surface of the substrate Oxide film, ruthenium dioxide film, tantalum pentoxide film, ruthenium dioxide film, insulating frame, ITO conductive film, and ruthenium pentoxide film, ruthenium dioxide film, bismuth pentoxide coated on the lower surface of the substrate a film or a ruthenium dioxide film; or a tantalum pentoxide film, a ruthenium dioxide film, a tantalum pentoxide film, a ruthenium dioxide film, an ITO conductive film, an insulating frame, and a lower surface of the substrate, which are sequentially plated on the upper surface of the substrate. A ruthenium pentoxide film, a ruthenium dioxide film, a ruthenium pentoxide film, a ruthenium dioxide film.
本實用新型適用於OGS類的觸控式螢幕設計，其在設計與製造成本上與現有技術相比，能夠更好的達到消影效果，使其消影效果更加容易控制；在玻璃的後表面再增加功能層，可提高產品的透光率，拓寬產品的阻值範圍15-300歐姆，在強光下改善了產品的顯示效果；OGS(One glass solution)結構，是在保護玻璃上直接形成ITO導電膜及感測器的技術，一塊玻璃同時起到保護玻璃和觸摸感測器的雙重作用，從技術層面來看，OGS技術較之目前主流的G/G觸控技術具備以下優勢：(1)結構簡單，輕、薄、透光性好；(2)節省了一層玻璃成本和減少了一次貼合成本；(3)減輕了重量；(4)增加了透光度；OGS能夠較好的滿足智慧終端機超薄化需求，並 提升顯示效果，由於省掉一片玻璃基板以及貼合工序，利於降低生產成本、提高產品良率。The utility model is suitable for the touch screen design of the OGS type, and the design and manufacturing cost can better achieve the shadow elimination effect compared with the prior art, so that the shadow elimination effect is more easily controlled; on the back surface of the glass Adding the functional layer can increase the light transmittance of the product, widening the resistance range of the product by 15-300 ohms, and improving the display effect of the product under strong light; the OGS (One glass solution) structure is formed directly on the protective glass. The technology of ITO conductive film and sensor, a piece of glass plays the dual role of protecting glass and touch sensor. From a technical point of view, OGS technology has the following advantages over the current mainstream G/G touch technology: 1) Simple structure, light, thin and good light transmission; (2) saving a layer of glass cost and reducing the cost of a single paste; (3) reducing the weight; (4) increasing the transmittance; OGS is better Meeting the ultra-thinning needs of smart terminals, and Improve the display effect, save a production cost and improve product yield by eliminating a piece of glass substrate and bonding process.
1‧‧‧基板1‧‧‧Substrate
2‧‧‧絕緣邊框2‧‧‧Insulated border
3‧‧‧ITO導電膜3‧‧‧ITO conductive film
4‧‧‧五氧化二鈮膜4‧‧‧ pentoxide film
5‧‧‧二氧化矽膜5‧‧‧2O2 film
a‧‧‧有ITO膜a‧‧‧With ITO film
b‧‧‧無ITO膜b‧‧‧No ITO film
6‧‧‧顯示區域6‧‧‧Display area
圖1為本實用新型第一種工藝中的實施例一側視圖；圖2為本實用新型第一種工藝中的實施例二側視圖；圖3為本實用新型第一種工藝中的實施例三側視圖；圖4為本實用新型第一種工藝中的實施例四側視圖；圖5為本實用新型第二種工藝中的實施例一側視圖；圖6為本實用新型第二種工藝中的實施例二側視圖；圖7為本實用新型第二種工藝中的實施例三側視圖；圖8為本實用新型第二種工藝中的實施例四側視圖；圖9為本實用新型第三種工藝中的實施例一側視圖；圖10為本實用新型第三種工藝中的實施例二側視圖；圖11為本實用新型第三種工藝中的實施例三側視圖；圖12為本實用新型第三種工藝中的實施例四側視圖；圖13為本實用新型ITO蝕刻線條效果圖；圖14為本實用新型絕緣邊框示意圖。1 is a side view of a first embodiment of the present invention; FIG. 2 is a side view of a second embodiment of the first process of the present invention; and FIG. 3 is an embodiment of the first process of the present invention. FIG. 4 is a side view of the fourth embodiment of the first process of the present invention; FIG. 5 is a side view of the second embodiment of the present invention; 2 is a side view of a second embodiment of the present invention; FIG. 8 is a side view of a fourth embodiment of the second process of the present invention; A side view of the third embodiment of the third process; FIG. 10 is a side view of the second embodiment of the third process of the present invention; FIG. 11 is a side view of the third embodiment of the third process of the present invention; 4 is a side view of the fourth embodiment of the present invention; FIG. 13 is a view showing the effect of the ITO etching line of the utility model; and FIG. 14 is a schematic view of the insulating frame of the present invention.
以下結合附圖對本實用新型作詳細說明。The present invention will be described in detail below with reference to the accompanying drawings.
一種消影高透過率OGS用玻璃，該OGS用玻璃為單片玻璃結構；分三種鍍膜結構，如圖4所示，第一種鍍膜結構包括：基板1及依次鍍於基板1上表面的絕緣邊框2、五氧化二鈮膜4、二氧化矽膜5、ITO導電膜3，及鍍於基板1下表面的五氧化二鈮膜4、二氧化矽膜5、五氧化二鈮膜4、二 氧化矽膜5。The utility model relates to a glass for high transmittance OGS, wherein the OGS glass is a monolithic glass structure; and the three coating structures are as shown in FIG. 4, the first coating structure comprises: a substrate 1 and an insulation which is sequentially plated on the upper surface of the substrate 1. Frame 2, tantalum pentoxide film 4, ruthenium dioxide film 5, ITO conductive film 3, and ruthenium pentoxide film 4, ruthenium dioxide film 5, ruthenium pentoxide film 4, 2, which are plated on the lower surface of substrate 1. Cerium oxide film 5.
如圖8所示，第二種鍍膜結構包括：基板1及依次鍍於基板1上表面的五氧化二鈮膜4、二氧化矽膜5、五氧化二鈮膜4、二氧化矽膜5、絕緣邊框2、ITO導電膜3，及鍍於基板1下表面的五氧化二鈮膜4、二氧化矽膜5、五氧化二鈮膜4、二氧化矽膜5。As shown in FIG. 8, the second coating structure includes: a substrate 1 and a tantalum pentoxide film 4, a ruthenium dioxide film 5, a ruthenium pentoxide film 4, and a ruthenium dioxide film 5, which are sequentially plated on the upper surface of the substrate 1. The insulating frame 2, the ITO conductive film 3, and the ruthenium pentoxide film 4, the ruthenium dioxide film 5, the ruthenium pentoxide film 4, and the ruthenium dioxide film 5 plated on the lower surface of the substrate 1.
如圖12所示，第三種鍍膜結構包括：基板1及依次鍍於基板1上表面的五氧化二鈮膜4、二氧化矽膜5、五氧化二鈮膜4、二氧化矽膜5、ITO導電膜3、絕緣邊框2，及鍍於基板1下表面的五氧化二鈮膜4、二氧化矽膜5、五氧化二鈮膜4、二氧化矽膜5。As shown in FIG. 12, the third coating structure includes: a substrate 1 and a ruthenium pentoxide film 4, a ruthenium dioxide film 5, a ruthenium pentoxide film 4, and a ruthenium dioxide film 5, which are sequentially plated on the upper surface of the substrate 1. The ITO conductive film 3, the insulating frame 2, and the ruthenium pentoxide film 4, the ruthenium dioxide film 5, the ruthenium pentoxide film 4, and the ruthenium dioxide film 5 plated on the lower surface of the substrate 1.
如圖1至圖4所示，為本實用新型第一種工藝中的四種實施例側視圖，其工藝製作流程包括：1、玻璃基板清洗；2、製作BM絕緣邊框圖案，BM邊框在玻璃前表面；3、帶有BM的玻璃基板進行鍍膜前清洗；4、將清洗乾淨的玻璃基板裝在基片架上送入鍍膜線的真空腔體內；先對玻璃基板的後表面進行鍍膜加工，如果功能層選擇兩層，則依次鍍一層Nb2 O5 膜，一層SiO2 膜即可，如果功能層選擇4層，則依次鍍先一層Nb2 O5 膜，一層SiO2 膜，再鍍一層Nb2 O5 膜，一層SiO2 膜；5、玻璃的後表面鍍完膜後，對玻璃的前表面進行鍍膜，同後表面功能層一樣，如果選擇兩層功能膜，則在BM上依次鍍一層Nb2 O5 膜，一層SiO2 膜即可，如果功能層選擇四層，則在BM上依次先鍍一層Nb2 O5 膜，一層SiO2 膜，再鍍一層Nb2 O5 膜，一層SiO2 膜，最後再鍍一層ITO導電膜，其中ITO採用低溫鍍膜；以及6、在鍍膜機中將玻璃取出，進行檢驗測試，合格入庫。As shown in FIG. 1 to FIG. 4 , a side view of four embodiments in the first process of the present invention includes the following steps: 1. cleaning the glass substrate; 2. fabricating the BM insulating frame pattern, and the BM frame is in the glass. Front surface; 3. Glass substrate with BM is cleaned before coating; 4. The cleaned glass substrate is mounted on the substrate holder and sent into the vacuum chamber of the coating line; first, the back surface of the glass substrate is coated. If the functional layer selects two layers, a layer of Nb 2 O 5 film and a layer of SiO 2 film may be sequentially plated. If the functional layer is selected to be 4 layers, a layer of Nb 2 O 5 film, a layer of SiO 2 film, and a layer of plating are sequentially plated. Nb 2 O 5 film, a layer of SiO 2 film; 5, after the film is finished on the back surface of the glass, the front surface of the glass is coated, similar to the functional layer on the back surface. If two layers of functional film are selected, the film is sequentially plated on the BM. A layer of Nb 2 O 5 film, a layer of SiO 2 film can be used. If the functional layer is selected as four layers, a layer of Nb 2 O 5 film, a layer of SiO 2 film, and a layer of Nb 2 O 5 film, one layer, are firstly plated on the BM. SiO 2 film, and finally coated with a layer of conductive ITO film, wherein the ITO film using a low temperature; in 6, taken out in a glass coater, a verification test, qualified storage.
如圖5至圖8所示，為本實用新型第二種工藝中的四種實施例側視圖，其工藝製作流程包括： 1、玻璃基板清洗；2、將清洗乾淨的玻璃基板裝在基片架上送入鍍膜線的真空腔體內；先對玻璃基板的後表面進行鍍膜加工，如果功能層選擇兩層，則依次鍍一層Nb2 O5 膜，一層SiO2 膜即可，如果功能層選擇4層，則依次鍍先一層Nb2 O5 膜，一層SiO2 膜，再鍍一層Nb2 O5 膜，一層SiO2 膜；3、玻璃的後表面鍍完膜後，對玻璃的前表面進行鍍膜，同後表面功能層一樣，如果選擇兩層功能膜，則在BM上依次鍍一層Nb2 O5 膜，一層SiO2 膜即可，如果功能層選擇四層，則在BM上依次先鍍一層Nb2 O5 膜，一層SiO2 膜，再鍍一層Nb2 O5 膜，一層SiO2 膜；4、然後從鍍膜機中取出，再次清洗；5、在玻璃前表面製作BM絕緣邊框；6、製作完BM絕緣邊框，再次進入鍍膜前清洗，鍍最後一層ITO導電膜，其中ITO採用低溫鍍膜；以及7、在鍍膜機中將玻璃取出，進行檢驗測試，合格入庫。As shown in FIG. 5 to FIG. 8 , a side view of four embodiments in the second process of the present invention includes the following steps: 1. cleaning the glass substrate; 2. mounting the cleaned glass substrate on the substrate. The rack is fed into the vacuum chamber of the coating line; the back surface of the glass substrate is first coated, and if the functional layer is selected two layers, a layer of Nb 2 O 5 film is sequentially coated, and a layer of SiO 2 film can be used, if the functional layer is selected 4 layers, then sequentially plated a layer of Nb 2 O 5 film, a layer of SiO 2 film, and then a layer of Nb 2 O 5 film, a layer of SiO 2 film; 3, after the surface of the glass is plated, the front surface of the glass is The coating is the same as the functional layer on the back surface. If two functional films are selected, a layer of Nb 2 O 5 film and a layer of SiO 2 film may be sequentially plated on the BM. If four layers are selected for the functional layer, the first layer is plated on the BM. a layer of Nb 2 O 5 film, a layer of SiO 2 film, and then a layer of Nb 2 O 5 film, a layer of SiO 2 film; 4, and then removed from the coating machine, and then cleaned; 5, BM insulation frame on the front surface of the glass; After finishing the BM insulation frame, clean it again before entering the coating, and plate the last layer of ITO conductive Wherein the low temperature ITO film; and 7, taken out in a glass coater, a verification test, qualified storage.
如圖9至圖12所示，為本實用新型第三種工藝中的四種實施例側視圖，其工藝製作流程包括：1、玻璃基板清洗；2、將清洗乾淨的玻璃基板裝在基片架上送入鍍膜線的真空腔體內；先對玻璃基板的後表面進行功能層鍍膜加工，如果功能層選擇兩層，則依次鍍一層Nb2 O5 膜，一層SiO2 膜即可，如果功能層選擇4層，則依次鍍先一層Nb2 O5 膜，一層SiO2 膜，再鍍一層Nb2 O5 膜，一層SiO2 膜；3、玻璃的後表面鍍完膜後，對玻璃的前表面進行鍍膜，同後表面功能層一樣，如果選擇兩層功能膜，則在BM上依次鍍一層Nb2 O5 膜，一層SiO2 膜即可，如果功能層選擇四層，則在BM上依次先鍍一層Nb2 O5 膜，一層SiO2 膜，再鍍一層Nb2 O5 膜，一層SiO2 膜，最後鍍一層ITO導電膜，其中ITO採用高溫鍍膜； 4、然後從鍍膜機中取出，再次清洗；5、在玻璃前表面製作BM絕緣邊框；以及6、進行檢驗測試，合格入庫。9 to FIG. 12 are side views of four embodiments in the third process of the present invention, the process of which includes the following steps: 1. cleaning the glass substrate; 2. mounting the cleaned glass substrate on the substrate. The rack is fed into the vacuum chamber of the coating line; first, the functional surface layer is processed on the back surface of the glass substrate. If the functional layer is selected as two layers, a layer of Nb 2 O 5 film and a layer of SiO 2 film may be sequentially plated, if function Select 4 layers, then plate a layer of Nb 2 O 5 film, a layer of SiO 2 film, and then plate a layer of Nb 2 O 5 film, a layer of SiO 2 film; 3, after the surface of the glass is plated, the front of the glass The surface is coated, the same as the functional layer on the back surface. If two functional films are selected, a layer of Nb 2 O 5 film is sequentially plated on the BM, and a layer of SiO 2 film can be used. If the function layer selects four layers, it is sequentially on the BM. First, a layer of Nb 2 O 5 film, a layer of SiO 2 film, a layer of Nb 2 O 5 film, a layer of SiO 2 film, and finally a layer of ITO conductive film, wherein ITO is coated with high temperature; 4, and then removed from the coating machine, Clean again; 5. Make a BM insulated frame on the front surface of the glass; and 6, enter Testing, qualified storage.
圖13為ITO蝕刻線條效果圖，a代表有ITO膜，b代表無ITO膜；圖14為絕緣邊框示意圖，絕緣邊框2包圍的中間為顯示區域6。13 is an ITO etching line effect diagram, a represents an ITO film, b represents an ITO-free film; FIG. 14 is a schematic view of an insulating frame, and the middle surrounded by the insulating frame 2 is a display region 6.
以上三種方案中的Nb2 O5 膜都是採用中頻反應磁控濺射的方式製備而成，工作真空度為0.2~0.5Pa，工作氣體為高純氬氣，純度為99.999%，氬氣80~120sccm，中頻反應濺射的反應氣體為高純氧氣，純度為99.999%，氧氣占比例10~15%，靶功率範圍介於5KW~20KW，靶電壓範圍介於550V~650V，膜層厚度範圍介於3nm~100nm之間。The Nb 2 O 5 films in the above three schemes are all prepared by medium frequency reactive magnetron sputtering. The working vacuum is 0.2~0.5Pa, the working gas is high purity argon, the purity is 99.999%, argon gas. 80~120sccm, the reaction gas of medium frequency reactive sputtering is high purity oxygen, the purity is 99.999%, the proportion of oxygen is 10~15%, the target power range is 5KW~20KW, the target voltage range is 550V~650V, the film layer The thickness ranges from 3 nm to 100 nm.
以上三種方案中的SiO2 膜都是採用中頻反應磁控濺射的方式製備而成，工作真空度為0.2~0.5Pa，工作氣體為高純氬氣，純度為99.999%，氬氣200~400sccm，中頻反應濺射的反應氣體為高純氧氣，純度為99.999%，氧氣占比例30~50%，靶功率範圍介於5KW~50KW，靶電壓範圍介於450V~550V，膜層厚度範圍介於20nm~200nm之間。The SiO 2 films in the above three schemes are all prepared by medium frequency reactive magnetron sputtering. The working vacuum is 0.2~0.5Pa, the working gas is high purity argon, the purity is 99.999%, and the argon gas is 200~. 400sccm, the reaction gas of medium frequency reactive sputtering is high purity oxygen, the purity is 99.999%, the proportion of oxygen is 30~50%, the target power range is from 5KW~50KW, the target voltage range is from 450V~550V, the film thickness range Between 20nm~200nm.
高溫ITO導電膜是採用直流磁控濺射的方式製備而成，工作真空度為0.2~0.5Pa，工作氣體為高純氬氣，純度為99.999%，氬氣240~350sccm，靶功率範圍介於5KW~30KW，靶電壓介於220V~250V，膜層電阻在15~300Ω之間。The high temperature ITO conductive film is prepared by DC magnetron sputtering. The working vacuum is 0.2~0.5Pa, the working gas is high purity argon, the purity is 99.999%, the argon gas is 240~350sccm, and the target power range is between 5KW~30KW, the target voltage is between 220V~250V, and the film resistance is between 15~300Ω.
低溫ITO導電膜是採用直流疊加射頻濺射的方式製備而成，工作真空度為0.2~0.5Pa，工作氣體為高純氬氣，純度為99.999%，氬氣240-350sccm，靶功率範圍介於5KW~40KW，靶電壓範圍介於110V~150V，膜層電阻在15~300Ω之間。The low temperature ITO conductive film is prepared by DC superposition RF sputtering. The working vacuum is 0.2~0.5Pa, the working gas is high purity argon, the purity is 99.999%, the argon gas is 240-350sccm, and the target power range is between 5KW~40KW, the target voltage range is between 110V~150V, and the film resistance is between 15~300Ω.
玻璃基板的溫度根據OGS本身的製作工藝，分為高溫鍍膜和低溫鍍膜，如果如果BM層在玻璃前表面的第一道工序，則前表面的鍍膜制程全部採用低溫鍍膜；若BM在玻璃前表面的功能層和ITO膜之間，則功能 層採用高溫方式或者低溫方式生產均可，但是ITO膜層需要採用低溫鍍膜；若BM層在玻璃前表面的功能層和ITO膜層之後，則鍍膜制程完全可採取高溫鍍膜來完成。在以上溫度範圍內，溫度的高低對於採用中頻反應濺射製備的Nb2 O5 膜和SiO2 膜在工藝上沒有影響；但是對ITO膜層來說，溫度的高低影響到膜層的製備方式，可以根據溫度的高低和對膜層性能的要求選擇採取直流疊加射頻濺射的方式鍍膜或者直接採用直流濺射的方式完成。The temperature of the glass substrate is divided into high temperature coating and low temperature coating according to the manufacturing process of OGS itself. If the first step of the BM layer on the front surface of the glass, the coating process of the front surface is all low temperature coating; if the BM is on the front surface of the glass Between the functional layer and the ITO film, the functional layer can be produced by high temperature or low temperature, but the ITO film layer needs to be coated with low temperature; if the BM layer is behind the functional layer of the glass front surface and the ITO film layer, the coating process It can be done completely by high temperature coating. In the above temperature range, the temperature has no effect on the process of Nb 2 O 5 film and SiO 2 film prepared by medium frequency reactive sputtering; but for the ITO film layer, the temperature is affected by the film layer preparation. The method can be selected by DC superposition RF sputtering or directly by DC sputtering according to the temperature and the requirements of the film performance.
具體實施案例選取，以下如表所示：
以上所述僅為本實用新型的優選實施方式，並非因此限制本實用新型的專利範圍，凡是利用本實用新型說明書及附圖內容所作的等效結構或等效流程變換，或直接或間接運用在其它相關的技術領域，均同理包括在本實用新型的專利保護範圍內。The above description is only a preferred embodiment of the present invention, and thus does not limit the scope of the patent of the present invention. Any equivalent structure or equivalent process transformation made by using the specification and the drawings of the present invention may be directly or indirectly applied to Other related technical fields are equally included in the scope of patent protection of the present invention.
1‧‧‧基板1‧‧‧Substrate
2‧‧‧絕緣邊框2‧‧‧Insulated border
3‧‧‧ITO導電膜3‧‧‧ITO conductive film
4‧‧‧五氧化二鈮膜4‧‧‧ pentoxide film
5‧‧‧二氧化矽膜5‧‧‧2O2 film
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310021220.8A CN103092416B (en) | 2013-01-18 | 2013-01-18 | Shadow-removing high transmittance glass for one glass solution (OGS) and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM474967U true TWM474967U (en) | 2014-03-21 |
Family
ID=48205069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102216184U TWM474967U (en) | 2013-01-18 | 2013-08-28 | High transmittance vanishing glass used in OGS |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103092416B (en) |
| TW (1) | TWM474967U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104327594A (en) * | 2014-08-28 | 2015-02-04 | 徐若谷 | Insulation black printing ink capable of eliminating ITO line shadow and manufacturing method thereof |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103102084A (en) * | 2013-01-21 | 2013-05-15 | 深圳市正星光电技术有限公司 | Glass for broadband high transmittance OGS (one glass solution) and preparation method thereof |
| CN103218102B (en) * | 2013-05-10 | 2015-11-18 | 洛阳康耀电子有限公司 | A kind of job operation of capacitance plate double-sided coated glass and double-sided coated glass |
| CN104090674A (en) * | 2014-05-09 | 2014-10-08 | 浙江金指科技有限公司 | OGS touch screen |
| CN104834420B (en) * | 2015-04-16 | 2018-01-09 | 张家港市铭斯特光电科技有限公司 | A kind of capacitance touch screen electro-conductive glass and its preparation technology |
| CN105084773A (en) * | 2015-05-13 | 2015-11-25 | 信义光伏产业(安徽)控股有限公司 | Anti-reflection vanishing AZO conductive glass, and manufacture method and touch control apparatus thereof |
| CN106125988B (en) * | 2016-07-14 | 2021-02-09 | 京东方科技集团股份有限公司 | Touch screen and touch display panel |
| CN106865998B (en) * | 2017-03-22 | 2022-08-26 | 宜昌南玻显示器件有限公司 | Shadow-eliminating conductive glass for OLED and preparation method thereof |
| CN110863185B (en) * | 2019-12-06 | 2023-09-22 | 天津美泰真空技术有限公司 | Low-reflection high-transmission film and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101475317A (en) * | 2009-02-13 | 2009-07-08 | 江苏津通先锋光电显示技术有限公司 | High transmittance conductive glass for touch screen and technique for producing the same |
| CN101648777A (en) * | 2009-07-31 | 2010-02-17 | 佳晶光电（厦门）有限公司 | High-transmittance TP glass and manufacturing method thereof |
| CN102736813B (en) * | 2012-05-25 | 2015-11-18 | 芜湖长信科技股份有限公司 | A kind of production method of cover plate sial glass of capacitor formula touch function |
| CN102880340B (en) * | 2012-08-28 | 2015-04-08 | 北京京东方光电科技有限公司 | Single-layer externally hanging touch panel and manufacturing method thereof and liquid crystal display |
-
2013
- 2013-01-18 CN CN201310021220.8A patent/CN103092416B/en not_active Expired - Fee Related
- 2013-08-28 TW TW102216184U patent/TWM474967U/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104327594A (en) * | 2014-08-28 | 2015-02-04 | 徐若谷 | Insulation black printing ink capable of eliminating ITO line shadow and manufacturing method thereof |
| CN104327594B (en) * | 2014-08-28 | 2016-08-10 | 徐若谷 | A kind of insulating black ink eliminating ITO line shadow and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103092416B (en) | 2015-04-15 |
| CN103092416A (en) | 2013-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWM474967U (en) | High transmittance vanishing glass used in OGS | |
| JP6122253B2 (en) | Capacitive touch panel substrate, manufacturing method and manufacturing apparatus thereof | |
| CN104064257B (en) | Low-resistance ITO transparent conductive film | |
| CN203510854U (en) | High transmittance glass and touch display screen | |
| CN101648777A (en) | High-transmittance TP glass and manufacturing method thereof | |
| CN103226212A (en) | Vanishing transparent conductive film | |
| JP6267641B2 (en) | Manufacturing method of substrate with transparent electrode, and substrate with transparent electrode | |
| WO2016141664A1 (en) | Shadow elimination structure, touch screen and preparation method thereof | |
| CN105624625B (en) | A kind of method for improving ZnO/Ag/ZnO transparent conductive film photoelectric properties | |
| CN201309893Y (en) | Transparent conductive glass for high transmittance touch screen | |
| CN103102084A (en) | Glass for broadband high transmittance OGS (one glass solution) and preparation method thereof | |
| CN203311396U (en) | Shadow eliminating high-transmittance glass for OGS | |
| KR20110137550A (en) | Transparent conductive stacked film and touch panel having the same | |
| CN104035637A (en) | Manufacturing technology of OGS touch screen | |
| CN103488369A (en) | Touch screen without chromatic aberration and method for manufacturing touch screen | |
| TW201445404A (en) | Transparent conductive film structure and touch panel thereof | |
| CN102642357B (en) | Multi-film optical plate and preparation method thereof | |
| US10349511B2 (en) | Conductive structure and manufacturing method thereof | |
| WO2014157312A1 (en) | Transparent conductive multilayer film and method for producing same | |
| TW201633081A (en) | Low chrominance touch control substrate | |
| CN105845203B (en) | A kind of flexible copper grid base transparent conducting film | |
| CN103970390A (en) | OGS capacitive touch screen of metal frame bridge, and machining technology of OGS capacitive touch screen | |
| CN203259674U (en) | Shadow-eliminating transparent conductive film | |
| TW201412669A (en) | High transparency typed single-silver low-emission coated glass | |
| WO2017143680A1 (en) | Touch-control screen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4K | Annulment or lapse of a utility model due to non-payment of fees |