CN103774107A - Sputter coating method - Google Patents
Sputter coating method Download PDFInfo
- Publication number
- CN103774107A CN103774107A CN201410036067.0A CN201410036067A CN103774107A CN 103774107 A CN103774107 A CN 103774107A CN 201410036067 A CN201410036067 A CN 201410036067A CN 103774107 A CN103774107 A CN 103774107A
- Authority
- CN
- China
- Prior art keywords
- substrate
- chamber
- sputtering
- sputtering chamber
- horizontal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a sputter coating method. The sputter coating method comprises the following steps: providing a substrate, and arranging the substrate on a positioning tray; transferring the positioning tray on which the substrate is arranged into a horizontal sputtering chamber; and coating on the substrate in the horizontal sputtering chamber by adopting magnetron sputtering. According to the sputter coating method, the substrate is arranged in the positioning tray, and the positioning tray is transferred into the horizontal sputtering chamber for coating, the substrate is directly arranged in the positioning tray and does not drop in the horizontal process, the substrate does not need to be fixed by adopting a clamp, the edge effect and product breakage risk are avoided, and the yield of the product is high.
Description
Technical field
The present invention relates to coating technique field, particularly relate to a kind of method of sputter coating.
Background technology
In technique, the normal film coating method adopting is generally sputter coating at present.In the method for sputter coating, vertical sputter coating process adopts vertical filming equipment to carry out plated film.The development of vertical filming equipment is comparatively rapid, vertical coating process maturation, and stable performance, cost performance is high.
But vertical plated film need to be used fixture fixing base, make the fringing effect of product obvious, and the risk that product breaks is higher.
Summary of the invention
Based on this, be necessary to provide a kind of method of the sputter coating that can avoid fringing effect and product risk of rupture.
A method for sputter coating, comprises the steps:
Substrate is provided, described substrate is positioned in location tray;
The described location tray that is placed with substrate is conveyed in horizontal sputtering chamber; And
In described horizontal sputtering chamber, adopt magnetron sputtering plated film on described substrate.
Therein in an embodiment, described described substrate is positioned over before step in location tray and also comprises described substrate is cleaned and dry step, described cleaning and dry step are: after described substrate is cleaned with pure water and alkali lye successively, carry out successively again two fluid sprays, pure water spray and high-pressure spraying, then use successively cold wind and warm air drying.
In an embodiment, the described step that the described location tray that is placed with substrate is conveyed in horizontal sputtering chamber is to adopt optoelectronic induction transfer system that the described location tray that is placed with substrate is conveyed in horizontal sputtering chamber therein.
Therein in an embodiment, described the described location tray that is placed with substrate is conveyed into the step in horizontal sputtering chamber before, also comprise the step that successively the described location tray that is placed with substrate is conveyed into successively to First Transition chamber and the first surge chamber.
Therein in an embodiment, described in described horizontal sputtering chamber, adopt after the step of magnetron sputtering plated film on described substrate, also comprise successively the described location tray that is placed with substrate is sent out from described horizontal sputtering chamber, and be conveyed into successively the step of the second surge chamber and the second transition chamber.
Therein in an embodiment, described horizontal sputtering chamber comprises the first sputtering chamber and the second sputtering chamber, described in described horizontal sputtering chamber, adopt in the step of magnetron sputtering plated film on described substrate, in described the first sputtering chamber and the second sputtering chamber, adopt magnetron sputtering plated film on described substrate successively.
In an embodiment, described in described horizontal sputtering chamber therein, adopt in the step of magnetron sputtering plated film on described substrate, the temperature of described substrate is 80 ℃～100 ℃.
In an embodiment, described in described horizontal sputtering chamber therein, adopt in the step of magnetron sputtering plated film on described substrate, vacuum tightness is 2.5*10
-1pa～3.50*10
-3pa.
In an embodiment, described in described horizontal sputtering chamber therein, adopt in the step of magnetron sputtering plated film on described substrate, the travelling speed of described substrate is 1.0m/min～1.4m/min.
In an embodiment, described in described horizontal sputtering chamber therein, adopt in the step of magnetron sputtering plated film on described substrate, sputtering voltage is 300V～380V.
The method of above-mentioned sputter coating is positioned over substrate in location tray, then location tray is conveyed in horizontal sputter coating system and carries out plated film, in this horizontal technique, substrate is directly positioned in location tray and can not drops, without adopting fixture fixing base, the risk of having avoided fringing effect and product to break, product yield is high.
Accompanying drawing explanation
Fig. 1 is the schema of the method for the sputter coating of an embodiment;
Fig. 2 is the schematic diagram of the method for the sputter coating shown in Fig. 1;
Fig. 3 is the structural representation of the horizontal sputter coating system shown in Fig. 2.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details are set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar improvement without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public concrete enforcement.
Refer to Fig. 1, the method for the sputter coating of an embodiment, comprises the steps S110, step S120 and step S130.
Step S110: substrate is provided, substrate is positioned in location tray.
Select according to the actual requirements substrate.Substrate can be TFT(Thin-Film Transistor) substrate, transparent glass substrate or flexible base, board etc.
Before step in the location tray that substrate is positioned over, also comprise substrate is cleaned and dry step.Cleaning and dry step are: after substrate is cleaned with pure water and alkali lye successively, then carry out successively two fluid sprays, pure water spray and high-pressure spraying, then use successively cold wind and warm air drying.
Adopt the thoroughly dirty and dust of substrate surface of above-mentioned cleaning step, avoid dirty and with dust, rete is had a negative impact.
Wherein, alkali lye is alkalis, as washing powder solution, liquid detergent solution etc.
High-pressure spraying refers to high-pressure spraying ultrapure water, and pressure is preferably 1kg/cm
2～2kg/cm
2, fully to remove the dirty and dust on substrate, but wounded substrate not especially can be protected comparatively fragile substrate preferably, as TFT substrate, avoids damaging TFT substrate liquid crystal.
After base-plate cleaning is clean, pass through successively cold wind and warm air drying, then check substrate surface cleaning quality, qualified, for subsequent use.Use successively cold wind and warm air drying, be conducive to reduce substrate breakage risk, protective substrate.
Please refer to Fig. 2 and Fig. 3, produce in order to realize serialization, use travelling belt 100 to transmit location tray 200.Location tray 200 is sent to entering in sheet chamber 301 of horizontal coating system 300 by travelling belt 100.After substrate (not shown) is cleaned and is dried in cleaning machine 400, clean, dry substrate are positioned in location tray 200.Preferably by mechanical arm (not shown), clean, dry substrate are positioned in the location tray 200 in sheet chamber 301, realize automated job, enhance productivity.
What location tray 200 had placement substrate is supporting plane, and substrate is directly positioned in location tray 200, can not drop, without using fixture to be fixed in transport process.
Step S120: the location tray horizontal transmission that is placed with substrate is entered in horizontal sputtering chamber.
Please again consult Fig. 3, horizontal coating system 300 comprises into sheet chamber 301, First Transition chamber 302, the first surge chamber 303, horizontal sputtering chamber 304, the second surge chamber 305, the second transition chamber 306 and slice chamber 307.Enter sheet chamber 301, First Transition chamber 302, the first surge chamber 303, horizontal sputtering chamber 304, the second surge chamber 305, the second transition chamber 306 and slice chamber 307 all in same level, facilitate horizontal transport to be placed with the location tray 200 of substrate.
This optoelectronic induction transfer system by infrared induction, is not affected by the external environment, and it highly sensitive, high to judgment accuracy in kind improved the stability of producing.
The air pressure entering in sheet chamber 301 is normal atmosphere.The vacuum tightness of First Transition chamber 302 is 2*10
-1pa～3*10
-2.The vacuum tightness of the first surge chamber 303 is 2*10
-2pa～3*10
-3pa.
Step S130: in horizontal sputtering chamber, adopt magnetron sputtering plated film on substrate.
Preferably, horizontal sputtering chamber 304 comprises the first sputtering chamber 3042 and the second sputtering chamber 3044.The location tray 200 that is placed with substrate is conveyed in the first sputtering chamber 3042 and is carried out after magnetron sputtering plating by the first surge chamber 303, then is conveyed into the second sputtering chamber 3044 by the first sputtering chamber 3042 and carries out magnetron sputtering plating.
In the first sputtering chamber 3042 and the second sputtering chamber 3044, carry out magnetron sputtering plating successively, be conducive to improve the homogeneity of rete.
And, due to when the overlong time of the sputtering sedimentation of same sputtering chamber, can cause to a certain extent the rising of substrate temperature, be unfavorable for the substrate of protecting temperature tolerance bad.For example, the high temperature tolerance of the glass substrate that the high temperature tolerance of TFT substrate is more general is poor, and long-time plated film may damage the liquid crystal of TFT substrate.Therefore, in the first sputtering chamber 3042 and the second sputtering chamber 3044, carry out magnetron sputtering plating successively, be conducive to protective substrate, improve product yield.
Further preferably, in the first sputtering chamber 3042, there are 3 sputter target position (not shown), carry out magnetron sputtering at substrate continuity from above plated film with 3 target position successively.In the second sputtering chamber 3044, there are 3 sputter target position (not shown), successively with carrying out magnetron sputtering at substrate continuity from above plated film with 3 target position.In the first sputtering chamber 3042, arrange in 3 sputter target position and the second sputtering chamber 3,044 3 sputter target position are set, be further conducive to improve the homogeneity of rete, be conducive to improve the performance of rete.
In sputter coating process, too low when the temperature of substrate, the crystal grain of the film forming is less, can cause crystal boundary scattering seriously to cause that film resiativity declines.When the excess Temperature of substrate, one conveniently can produce detrimentally affect to substrate, on the other hand, can cause rete defect larger when substrate temperature is too high, and resistivity raises.
Therefore, preferably, adopt in the step of magnetron sputtering plated film on substrate, the temperature of substrate is 80 ℃～100 ℃.Under this substrate temperature, carry out plated film, avoid high temperature to produce detrimentally affect to substrate, and be conducive to avoid defect, obtain suitable resistivity.
Preferably, it is 1400S that substrate is heated to time of 80 ℃～100 ℃ from room temperature, adopts suitable heating rate, avoids substrate to be acutely heated, and is conducive to protective substrate, effectively prevents substrate breakage.Particularly effectively protect TFT substrate.
Preferably, the vacuum tightness of the first sputtering chamber 3042 and the second sputtering chamber 3044 is 2.5*10
-1pa～3.50*10
-3pa.
Preferably, adopt in the step of magnetron sputtering plated film on substrate, the travelling speed of substrate is 1.0m/min～1.4m/min, more preferably 1.2m/min.Under this travelling speed, guarantee certain preparation efficiency and guarantee plated film homogeneity.
Preferably, the voltage of magnetron sputtering is 300V～380V.Sputtering power is 3000W～3600W.Adopt suitable voltage and sputtering power, avoid voltage and sputtering power too low, guarantee that plasma sputter obtains suitable energy, improve the adhesive power of rete and substrate and improve the compactness of rete, also avoid the too high and phenomenon that causes target to ftracture of voltage and sputtering power simultaneously.
In sputter procedure, when the flow of argon gas is too low, the atom of sputter is less, and crystallization rate is too low, and film quality is poor, and rete is thin, and for sputter, to obtain the required sputtering time of the rete of required thickness longer, and preparation efficiency is low.When the flow of argon gas is too high, argon ion is more, and ion impact is more, also can cause crystallization rate too high and affect film quality.Therefore, preferably, the flow of argon gas is 1185sccm～1215sccm.More preferably, the flow of argon gas is 1200sccm.
Preferably, target spacing is 80mm, moderate to guarantee the move distance of particle, avoid accelerating causing not kinetic energy too small and cause the problem that crystallization rate is low, avoid part particle can not be splashed on substrate and because bombarding the excessive problem that causes the compactness of rete to decline simultaneously.
Preferably, in horizontal sputtering chamber, adopt magnetron sputtering after plated film, also to comprise successively the location tray 200 that is placed with substrate is sent out from horizontal sputtering chamber 304 on substrate, and horizontal transmission enter the step of the second surge chamber 305 and the second transition chamber 306 successively.
Preferably, the vacuum tightness of the second surge chamber 305 is 4*10
-2pa～2.5*10
-3pa.The 4*10 of the second transition chamber 306
-1pa～6*10
-2pa.
The vacuum tightness of First Transition chamber 302 is 2*10
-1pa～3*10
-2pa.The vacuum tightness of the first surge chamber 303 is 2*10
-2pa～3*10
-3pa, the vacuum tightness of the second surge chamber 305 is 4*10
-2pa～2.5*10
-3pa, the vacuum tightness of the second transition chamber 306 is 4*10
-1pa～6*10
-2pa, can cushion and transition preferably, and the limited product of avoiding breaks, and improves product yield.
The location tray 200 that is placed with substrate is transferred in slice chamber 307 from the second transition chamber 306, the substrate that has plated film is taken out and is sent in finished room 600 with mechanical arm.Location tray 200 out enters travelling belt 100 from slice chamber 307, is sent to into sheet chamber 301 by travelling belt 100, offers next batch plated film, realizes consecutive production.
Please again consult Fig. 3, be appreciated that, location tray 200 is multiple, some location tray 200 drive substrate to enter in horizontal sputtering chamber 304 to carry out plated film, some location tray 200 drives another substrates to wait in the first surge chamber 303, realizes the while operation on different stations of multiple substrates by multiple location tray 200, makes the continuity plated film of multiple substrates, batch production, enhances productivity.
Above-mentioned sputtering film coating method is positioned over substrate in location tray 200, then location tray 200 is conveyed in horizontal sputtering chamber 304 and carries out plated film, in this horizontal technique, location tray 200 can not change with the relative position of substrate, substrate is directly positioned in location tray 200, in transport process, can not drop, thereby without adopting fixture fixing base, the risk of having avoided fringing effect and product to break, product yield is high.
And, adopt the preparation-obtained ito thin film of above-mentioned sputtering film coating method to have and can prevent the advantages such as ESD, light transmission is good, compactness is good.
By specific embodiment, the method for above-mentioned sputter coating is further set forth below.
Embodiment 1
1, provide TFT substrate, after with cleaning machine, TFT substrate being cleaned with pure water and alkali lye successively, then carry out successively two fluid sprays, pure water spray and high-pressure spraying, then use successively cold wind and warm air drying, for subsequent use; Wherein, the pressure of high-pressure spraying is 1.2kg/cm
2;
2, with travelling belt by location tray level to the entering in sheet chamber of horizontal sputter coating system, clean, dry TFT substrate are positioned in the location tray of sheet chamber with mechanical arm, adopt optoelectronic induction transfer system that the location tray that is placed with TFT substrate successively horizontal transmission is entered in the First Transition chamber and the first surge chamber of horizontal sputter coating system; Wherein, the pressure that enters sheet chamber is normal atmosphere, and the vacuum tightness of First Transition chamber is 1*10
-1the vacuum tightness of Pa the first surge chamber is 1.8*10
-2pa;
3, from the first surge chamber, horizontal transmission is out by the location tray that is placed with TFT substrate to adopt optoelectronic induction transfer system, and transmission enters in the first sputtering chamber, in the first sputtering chamber, on TFT substrate, carry out plated film with three ITO target position successively, then the location tray that is placed with TFT substrate is entered the second sputtering chamber from the first sputtering chamber transmission, in the second sputtering chamber, on TFT substrate, carry out plated film with three ITO target position successively; The sputtering technology condition of the first sputtering chamber and the second sputtering chamber is identical, and vacuum tightness is 2.5*10
-2pa, TFT substrate temperature is 100 ℃, it is 1400S that TFT substrate is heated to time of 100 ℃ by room temperature, voltage is 300V, and sputtering power is 3000W, and the flow of argon gas is 1200sccm, oxygen flow is 200sccm, target spacing is 80mm, and the plated film time of the first sputtering chamber is 25s, and the plated film time of the second sputtering chamber is 25s;
4, on TFT substrate, plate after ito thin film, adopt optoelectronic induction transfer system by the location tray that is placed with TFT substrate from the second sputtering chamber successively horizontal transmission to the second surge chamber, the second transition chamber and slice chamber, and in slice chamber, the TFT substrate that plates ito thin film is taken out and puts into finished room from location tray with mechanical arm, location tray is conveyed on travelling belt from slice chamber, be sent to into sheet chamber, offer next batch filming process.Wherein, the vacuum tightness of the second surge chamber is 3.7*10
-2pa, the vacuum tightness of the second transition chamber is 3*10
-1pa, the pressure of slice chamber is normal atmosphere.
The thickness of the ito thin film that test is plated on TFT substrate is 210nm, and resistance is 520 Ω/, and transmittance is 95.8%, rete aberration L=39.3, and a=-1.7, b=-5, △ E≤0.5, qualified.
Embodiment 2
1, provide TFT substrate, after with cleaning machine, TFT substrate being cleaned with pure water and alkali lye successively, then carry out successively two fluid sprays, pure water spray and high-pressure spraying, then use successively cold wind and warm air drying, for subsequent use; Wherein, the pressure of high-pressure spraying is 1.3kg/cm
2;
2, with travelling belt by location tray level to the entering in sheet chamber of horizontal sputter coating system, clean, dry TFT substrate are positioned in the location tray of sheet chamber with mechanical arm, adopt optoelectronic induction transfer system that the location tray that is placed with TFT substrate successively horizontal transmission is entered in the First Transition chamber and the first surge chamber of horizontal sputter coating system; Wherein, the pressure that enters sheet chamber is normal atmosphere, and the vacuum tightness of First Transition chamber is 3.5*10
-2pa, the vacuum tightness of the first surge chamber is 3.8*10
-3pa;
3, from the first surge chamber, horizontal transmission is out by the location tray that is placed with TFT substrate to adopt optoelectronic induction transfer system, and transmission enters in the first sputtering chamber, in the first sputtering chamber, on TFT substrate, carry out plated film with three ITO target position successively, then the location tray that is placed with TFT substrate is entered the second sputtering chamber from the first sputtering chamber transmission, in the second sputtering chamber, on TFT substrate, carry out plated film with three ITO target position successively; The sputtering technology condition of the first sputtering chamber and the second sputtering chamber is identical, and vacuum tightness is 3.5*10
-3pa, TFT substrate temperature is 80 ℃, it is 1400S that TFT substrate is heated to time of 80 ℃ by room temperature, voltage is 380V, and sputtering power is 4000W, and the flow of argon gas is 1185sccm, oxygen flow is 200sccm, target spacing is 80mm, and the plated film time of the first sputtering chamber is 20s, and the plated film time of the second sputtering chamber is 20s;
4, on TFT substrate, plate after ito thin film, adopt optoelectronic induction transfer system by the location tray that is placed with TFT substrate from the second sputtering chamber successively horizontal transmission to the second surge chamber, the second transition chamber and slice chamber, and in slice chamber, the TFT substrate that plates ito thin film is taken out and puts into finished room from location tray with mechanical arm, location tray is conveyed on travelling belt from slice chamber, be sent to into sheet chamber, offer next batch filming process.Wherein, the vacuum tightness of the second surge chamber is 3.8*10
-3pa, the vacuum tightness of the second transition chamber is 8.6*10
-2, the pressure of slice chamber is normal atmosphere.
The thickness of the ito thin film that test is plated on TFT substrate is 230nm, and resistance is 465 Ω/, and transmittance is 96.2%, rete aberration L=39.4, and a=-1.6, b=-4.9, △ E≤0.5, qualified.
Embodiment 3
1, provide TFT substrate, after with cleaning machine, TFT substrate being cleaned with pure water and alkali lye successively, then carry out successively two fluid sprays, pure water spray and high-pressure spraying, then use successively cold wind and warm air drying, for subsequent use; Wherein, the pressure of high-pressure spraying is 1.7kg/cm
2;
2, with travelling belt by location tray level to the entering in sheet chamber of horizontal sputter coating system, clean, dry TFT substrate are positioned in the location tray of sheet chamber with mechanical arm, adopt optoelectronic induction transfer system that the location tray that is placed with TFT substrate successively horizontal transmission is entered in the First Transition chamber and the first surge chamber of horizontal sputter coating system; Wherein, the pressure that enters sheet chamber is normal atmosphere, and the vacuum tightness of First Transition chamber is 6.8*10
-2pa, the vacuum tightness of the first surge chamber is 1.5*10
-2pa;
3, from the first surge chamber, horizontal transmission is out by the location tray that is placed with TFT substrate to adopt optoelectronic induction transfer system, and transmission enters in the first sputtering chamber, in the first sputtering chamber, on TFT substrate, carry out plated film with three ITO target position successively, then the location tray that is placed with TFT substrate is entered the second sputtering chamber from the first sputtering chamber transmission, in the second sputtering chamber, on TFT substrate, carry out plated film with three ITO target position successively; The sputtering technology condition of the first sputtering chamber and the second sputtering chamber is identical, and vacuum tightness is 3.0*10
-3pa, TFT substrate temperature is 90 ℃, it is 1400S that TFT substrate is heated to time of 90 ℃ by room temperature, voltage is 350V, and sputtering power is 3500W, and the flow of argon gas is 1215sccm, oxygen flow is 200sccm, target spacing is 80mm, and the plated film time of the first sputtering chamber is 22s, and the plated film time of the second sputtering chamber is 22s;
4, on TFT substrate, plate after ito thin film, adopt optoelectronic induction transfer system by the location tray that is placed with TFT substrate from the second sputtering chamber successively horizontal transmission to the second surge chamber, the second transition chamber and slice chamber, and in slice chamber, the TFT substrate that plates ito thin film is taken out and puts into finished room from location tray with mechanical arm, location tray is conveyed on travelling belt from slice chamber, be sent to into sheet chamber, offer next batch filming process.Wherein, the vacuum tightness of the second surge chamber is 2.4*10
-2pa, the vacuum tightness of the second transition chamber is 7.2*10
-2pa, the pressure of slice chamber is normal atmosphere.
The thickness of the ito thin film that test is plated on TFT substrate is 195nm, and resistance is that 650 Ω/ transmittance is 97.1%, rete aberration L=39.5, and a=-1.8, b=-4.7, △ E≤0.5, qualified.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a method for sputter coating, is characterized in that, comprises the steps:
Substrate is provided, described substrate is positioned in location tray;
The described location tray that is placed with substrate is conveyed in horizontal sputtering chamber; And
In described horizontal sputtering chamber, adopt magnetron sputtering plated film on described substrate.
2. the method for sputter coating according to claim 1, it is characterized in that, described described substrate is positioned over before step in location tray and also comprises described substrate is cleaned and dry step, described cleaning and dry step are: after described substrate is cleaned with pure water and alkali lye successively, carry out successively again two fluid sprays, pure water spray and high-pressure spraying, then use successively cold wind and warm air drying.
3. the method for sputter coating according to claim 1, it is characterized in that, the described step that the described location tray that is placed with substrate is conveyed in horizontal sputtering chamber is to adopt optoelectronic induction transfer system that the described location tray that is placed with substrate is conveyed in horizontal sputtering chamber.
4. the method for sputter coating according to claim 1, it is characterized in that, described the described location tray that is placed with substrate is conveyed into the step in horizontal sputtering chamber before, also comprise the step that successively the described location tray that is placed with substrate is conveyed into successively to First Transition chamber and the first surge chamber.
5. the method for sputter coating according to claim 1, it is characterized in that, described in described horizontal sputtering chamber, adopt after the step of magnetron sputtering plated film on described substrate, also comprise successively the described location tray that is placed with substrate is sent out from described horizontal sputtering chamber, and be conveyed into successively the step of the second surge chamber and the second transition chamber.
6. the method for sputter coating according to claim 1, it is characterized in that, described horizontal sputtering chamber comprises the first sputtering chamber and the second sputtering chamber, described in described horizontal sputtering chamber, adopt in the step of magnetron sputtering plated film on described substrate, in described the first sputtering chamber and the second sputtering chamber, adopt magnetron sputtering plated film on described substrate successively.
7. the method for sputter coating according to claim 1, is characterized in that, described in described horizontal sputtering chamber, adopts in the step of magnetron sputtering plated film on described substrate, and the temperature of described substrate is 80 ℃～100 ℃.
8. the method for sputter coating according to claim 1, is characterized in that, described in described horizontal sputtering chamber, adopts in the step of magnetron sputtering plated film on described substrate, and vacuum tightness is 2.5*10
-1pa～3.50*10
-3pa.
9. the method for sputter coating according to claim 1, is characterized in that, described in described horizontal sputtering chamber, adopts in the step of magnetron sputtering plated film on described substrate, and the travelling speed of described substrate is 1.0m/min～1.4m/min.
10. the method for sputter coating according to claim 1, is characterized in that, described in described horizontal sputtering chamber, adopts in the step of magnetron sputtering plated film on described substrate, and sputtering voltage is 300V～380V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410036067.0A CN103774107A (en) | 2014-01-25 | 2014-01-25 | Sputter coating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410036067.0A CN103774107A (en) | 2014-01-25 | 2014-01-25 | Sputter coating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103774107A true CN103774107A (en) | 2014-05-07 |
Family
ID=50566850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410036067.0A Pending CN103774107A (en) | 2014-01-25 | 2014-01-25 | Sputter coating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103774107A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106954917A (en) * | 2016-01-11 | 2017-07-18 | 福建新峰二维材料科技有限公司 | A kind of sole surface processing method |
| CN107564847A (en) * | 2017-07-21 | 2018-01-09 | 惠科股份有限公司 | The preparation method and making apparatus of a kind of display panel |
| CN107740046A (en) * | 2017-09-14 | 2018-02-27 | 江西沃格光电股份有限公司 | The film plating process of liquid crystal panel |
| CN108300974A (en) * | 2018-04-28 | 2018-07-20 | 深圳市正和忠信股份有限公司 | PVD Tumble-plating devices and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005045092A2 (en) * | 2003-11-04 | 2005-05-19 | Von Ardenne Anlagentechnik Gmbh | Elongate vacuum system for coating one or both sides of a flat substrate |
| CN1804112A (en) * | 2006-01-20 | 2006-07-19 | 浙江大学 | Electronic ceramic continuous sputtering coating equipment |
| CN202390535U (en) * | 2011-12-09 | 2012-08-22 | 深圳市创益科技发展有限公司 | Continuous vacuum plating facility with heating device |
| CN103805954A (en) * | 2014-02-20 | 2014-05-21 | 江西沃格光电股份有限公司 | Magneto-controlled sputter coating system |
| CN103820762A (en) * | 2014-02-20 | 2014-05-28 | 江西沃格光电股份有限公司 | Magnetron sputtering coating system |
-
2014
- 2014-01-25 CN CN201410036067.0A patent/CN103774107A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005045092A2 (en) * | 2003-11-04 | 2005-05-19 | Von Ardenne Anlagentechnik Gmbh | Elongate vacuum system for coating one or both sides of a flat substrate |
| CN1804112A (en) * | 2006-01-20 | 2006-07-19 | 浙江大学 | Electronic ceramic continuous sputtering coating equipment |
| CN202390535U (en) * | 2011-12-09 | 2012-08-22 | 深圳市创益科技发展有限公司 | Continuous vacuum plating facility with heating device |
| CN103805954A (en) * | 2014-02-20 | 2014-05-21 | 江西沃格光电股份有限公司 | Magneto-controlled sputter coating system |
| CN103820762A (en) * | 2014-02-20 | 2014-05-28 | 江西沃格光电股份有限公司 | Magnetron sputtering coating system |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106954917A (en) * | 2016-01-11 | 2017-07-18 | 福建新峰二维材料科技有限公司 | A kind of sole surface processing method |
| CN107564847A (en) * | 2017-07-21 | 2018-01-09 | 惠科股份有限公司 | The preparation method and making apparatus of a kind of display panel |
| WO2019015240A1 (en) * | 2017-07-21 | 2019-01-24 | 惠科股份有限公司 | Method and apparatus for fabricating display panel |
| CN107564847B (en) * | 2017-07-21 | 2019-12-24 | 惠科股份有限公司 | Manufacturing method and manufacturing equipment of display panel |
| CN107740046A (en) * | 2017-09-14 | 2018-02-27 | 江西沃格光电股份有限公司 | The film plating process of liquid crystal panel |
| CN107740046B (en) * | 2017-09-14 | 2019-02-01 | 江西沃格光电股份有限公司 | The film plating process of liquid crystal display panel |
| CN108300974A (en) * | 2018-04-28 | 2018-07-20 | 深圳市正和忠信股份有限公司 | PVD Tumble-plating devices and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103774107A (en) | Sputter coating method | |
| US9953951B2 (en) | Method of providing a flexible semiconductor device and flexible semiconductor device thereof | |
| CN103995441B (en) | Photoresistive striping process and optical resistance-stripping device | |
| JP2014019597A (en) | Method for producing glass film, and glass film laminate | |
| CN108227411B (en) | Photoresistance prebaking cooling system | |
| CN101785086A (en) | Display device manufacturing method and laminated structure | |
| CN103531715B (en) | Flexible photoelectric device substrate, flexible photoelectric device and preparation method | |
| CN103887285B (en) | Method for manufacturing anti-static TFT substrate | |
| JP7136275B2 (en) | LAMINATED BODY, ELECTRONIC DEVICE MANUFACTURING METHOD, LAMINATED PRODUCTION METHOD | |
| KR102475698B1 (en) | Manufacturing method of laminated board and electronic device | |
| US20160126259A1 (en) | Array substrate and method of producing the same, display panel and display device | |
| TWI650296B (en) | Method for producing glass film laminate, glass film laminate, and method for manufacturing electronic device | |
| CN203545883U (en) | Novel transparent conductive film glass thinning bearing device | |
| CN103230864B (en) | Manufacturing method of anti-static TFT substrate | |
| CN110527963B (en) | Manufacturing method of anti-static touch display integrated screen | |
| CN103000637A (en) | Coated thin film transistor (TFT) substrate, preparation method thereof and TFT | |
| CN102190979A (en) | Production method of PET (polyethylene terephthalate) protective film for manufacturing process of flat-panel display | |
| KR20150012783A (en) | Method of ultra handling thin glass for display panel | |
| CN102677015A (en) | Structure, device and method for stacking glass substrates for coating film manufacture | |
| CN105335002A (en) | Touch display device and manufacturing method thereof | |
| CN110739397B (en) | Flexible display substrate, preparation method and application thereof | |
| CN105589233B (en) | Wet method process apparatus and its maintaining method | |
| JP2015223810A (en) | Resin layer-equipped support substrate, and glass laminate | |
| CN104332380A (en) | Electrode used for dry etching device and preparation method thereof, and dry etching device | |
| CN111308780B (en) | MiniLED backlight substrate, cutting method thereof and MiniLED substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140507 |