CN103774116A - Plasma vapor deposition apparatus used for amorphous silicon battery deposition, and method thereof - Google Patents
Plasma vapor deposition apparatus used for amorphous silicon battery deposition, and method thereof Download PDFInfo
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- CN103774116A CN103774116A CN201210399015.0A CN201210399015A CN103774116A CN 103774116 A CN103774116 A CN 103774116A CN 201210399015 A CN201210399015 A CN 201210399015A CN 103774116 A CN103774116 A CN 103774116A
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Abstract
The invention relates to the solar energy field, and especially relates to a plasma vapor deposition apparatus used for the amorphous silicon battery deposition, and a method thereof. A technical scheme adopted in the invention is characterized in that the plasma vapor deposition apparatus used for the amorphous silicon battery deposition includes a deposition chamber, the inner wall of the deposition chamber is provided with heat transfer pipelines, the deposition chamber is connected with the outside through the pipelines, the deposition chamber includes an openable door, and movement guide rails, a pressure sensor and a temperature sensor are arranged in the deposition chamber. By adopting the technical scheme, the film plating effect is good, heat energy is saved, and spacing is accurately realized, so the whole runs stably.
Description
Technical field
The present invention relates to field of solar energy, relate in particular to the plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition.
Background technology
Traditional plasma gas phase deposition equipment all adopts external heat, and therefore Btu utilization is incomplete, and traditional plasma gas phase deposition device control is more difficult, and is difficult to reach the effect of needs.
Summary of the invention
The object of invention: in order to provide a kind of coating effects good, save the plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition of heating energy source.
In order to reach as above object, the present invention takes following technical scheme:
For the plasma gas phase deposition equipment of amorphous silicon battery deposition, it is characterized in that, comprise sediment chamber, sediment chamber's inwall has heat transfer pipe, sediment chamber is connected with outside by pipeline, sediment chamber comprises the one side door that can open, and deposition chamber interior has motion guide rail and pressure transmitter and temperature sensor.
The further technical scheme of the present invention is, described motion guide rail has two and parallel distribution.
The further technical scheme of the present invention is on described motion guide rail, there is the limited block that can limit clamp movement position.
The further technical scheme of the present invention is, described heat transfer pipe is evenly arranged on three of sediment chamber's inwalls.
The further technical scheme of the present invention is, the outer wall that outside, described sediment chamber is made up of lagging material.
Another technical scheme of the present invention is:
For the plasma vapor deposition method of amorphous silicon battery deposition, it is characterized in that, comprise following steps:
Deposition set-up procedure;
● preheating sedimentary environment 150-250 ℃;
● argon gas build-up of luminance, clean glass surface, remove the impurity of glass surface with argon ion;
● P layer deposition, pass into methane, the Main Function of methane is to deposit silicon carbide, as the layer of windowing, upsets spectrum, and more spectrum is absorbed;
● the in the situation that of build-up of luminance not, pass into the hydrogen of 30000sccm, the surface treatment after having deposited, destroys the weak bond producing in deposition process;
● hydrogen build-up of luminance is prepared;
PIN deposition for the first time;
● transition layer deposition;
● intrinsic layer deposition;
● N layer deposits for the first time;
PIN deposition for the second time;
● end battery P layer (deposition);
● pass into 10000sccmH
2, and ionization;
● P layer microcrystalline silicon deposition, doping 550sccm borine, 12000sccmH
2;
● first pass into 15000sccmH
2unionization, does environmental preparation to next step ionization;
● pass into 12000sccm amount H
2, and ionization;
● pass in advance 12000sccm H
2, for end battery intrinsic microcrystalline coating is prepared;
● intrinsic layer deposition, forms microcrystalline coating;
● subordinate phase intrinsic layer deposition;
● phase III intrinsic layer deposition;
● fourth stage intrinsic layer deposition; The even resistance of four deposition process meeting formation stages;
● N layer non-crystalline silicon doping deposition, to carry out in two stages, the first stage is 10000sccm hydrogen flowing quantity, 500sccm borane doping; Subordinate phase is mainly dopant ion deposition, provide and form needed a large amount of electronics after electric field, for generation current ready;
The sediment chamber's environmental treatment having deposited;
● evacuation process passes into argon gas, plays the effect that purifies sediment chamber;
● under applying argon gas state, ionize;
● vacuumize.
The further technical scheme of the present invention is, described step deposition set-up procedure and also having the following steps between PIN deposition for the first time,
● 15500sccm H
2deposition surface is cleaned;
● evacuation process passes into 500sccm argon gas, plays the effect that purifies sediment chamber;
● under applying argon gas state, ionize;
● vacuumize;
● fill under hydrogen state and ionize.
The further technical scheme of the present invention is, also comprises following steps in sediment chamber's environmental treatment that described step deposition completes after having vacuumized:
Fill under hydrogen state and ionize, pass into nitrogen in sediment chamber, equilibrium air pressure, reduces room temp.
Adopt as above the present invention of technical scheme, there is following beneficial effect: coating effects is good, save heating energy source, can accurately realize spacingly, make whole device stable.
Accompanying drawing explanation
Accompanying drawing is the structural representation of invention;
Wherein: 1. sediment chamber; 2. operation guide rail; 3. shielding case; 4. pressure transmitter; 5. temperature sensor; 6. automatically controlled part; 7. outer wall bracket.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are described, embodiment is not construed as limiting the invention:
For the plasma gas phase deposition equipment of amorphous silicon battery deposition, it is characterized in that, comprise sediment chamber 1, sediment chamber's 1 inwall has heat transfer pipe, sediment chamber 1 is connected with outside by pipeline, sediment chamber 1 comprises the one side door that can open, and there are motion guide rail 2 and pressure transmitter 4 and temperature sensor 5 in 1 inside, sediment chamber.
Pressure and temperature can facilitate sensing, to gather internal data, carries out the working control of coating process.Can regulate internal gas composition and pressure by pipeline.
The further technical scheme of the present invention is, described motion guide rail 2 has two and parallel distribution.
This equipment also has inflation inlet, and outside coordinates intelligentized inflation equipment.
On described motion guide rail 2, there is the limited block that can limit clamp movement position.Can make the position stability of fixture fix with this limited block, and make whole decoration stable.
Described heat transfer pipe is evenly arranged on three of sediment chamber's 1 inwalls.What inside was logical is heated oil.
The further technical scheme of the present invention is, the outer wall that 1 outside, described sediment chamber is made up of lagging material.
More than show and described ultimate principle of the present invention, principal character and advantage of the present invention.Those skilled in the art should understand the present invention and not be restricted to the described embodiments; that in above-described embodiment and specification sheets, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in claimed scope.
Claims (8)
1. the plasma gas phase deposition equipment depositing for amorphous silicon battery, it is characterized in that, comprise sediment chamber (1), sediment chamber (1) inwall has heat transfer pipe, sediment chamber (1) is connected with outside by pipeline, sediment chamber (1) comprises the one side door that can open, and there are motion guide rail (2) and pressure transmitter (4) and temperature sensor (5) in inside, sediment chamber (1).
2. the plasma gas phase deposition equipment for amorphous silicon battery deposition as claimed in claim 1, is characterized in that, described motion guide rail (2) has two and parallel distribution.
3. the plasma gas phase deposition equipment for amorphous silicon battery deposition as claimed in claim 1, is characterized in that, described motion guide rail has the limited block that can limit clamp movement position on (2).
4. the plasma gas phase deposition equipment for amorphous silicon battery deposition as claimed in claim 1, is characterized in that, described heat transfer pipe is evenly arranged on three of sediment chamber (1) inwalls.
5. the plasma gas phase deposition equipment for amorphous silicon battery deposition as claimed in claim 1, is characterized in that, described sediment chamber (1) outside outer wall being made up of lagging material.
6. for the plasma vapor deposition method of amorphous silicon battery deposition, it is characterized in that, comprise following steps:
Deposition set-up procedure;
● preheating sedimentary environment 150-250 ℃;
● argon gas build-up of luminance, clean glass surface, remove the impurity of glass surface with argon ion;
● P layer deposition, pass into methane, the Main Function of methane is to deposit silicon carbide, as the layer of windowing, upsets spectrum, and more spectrum is absorbed;
● the in the situation that of build-up of luminance not, pass into the hydrogen of 30000sccm, the surface treatment after having deposited, destroys the weak bond producing in deposition process;
● hydrogen build-up of luminance is prepared;
PIN deposition for the first time;
● transition layer deposition;
● intrinsic layer deposition;
● N layer deposits for the first time;
PIN deposition for the second time;
● end battery P layer (deposition);
● pass into 10000sccmH
2, and ionization;
● P layer microcrystalline silicon deposition, doping 550sccm borine, 12000sccmH
2;
● first pass into 15000sccmH
2unionization, does environmental preparation to next step ionization;
● pass into 12000sccm amount H
2, and ionization;
● pass in advance 12000sccm H
2, for end battery intrinsic microcrystalline coating is prepared;
● intrinsic layer deposition, forms microcrystalline coating;
● subordinate phase intrinsic layer deposition;
● phase III intrinsic layer deposition;
● fourth stage intrinsic layer deposition; The even resistance of four deposition process meeting formation stages;
● N layer non-crystalline silicon doping deposition, to carry out in two stages, the first stage is 10000sccm hydrogen flowing quantity, 500sccm borane doping; Subordinate phase is mainly dopant ion deposition, provide and form needed a large amount of electronics after electric field, for generation current ready;
The sediment chamber's environmental treatment having deposited;
● evacuation process passes into argon gas, plays the effect that purifies sediment chamber;
● under applying argon gas state, ionize;
● vacuumize.
7. the plasma vapor deposition method for amorphous silicon battery deposition as claimed in claim 6, is characterized in that, described step deposition set-up procedure and for the first time PIN also have the following steps between depositing,
● 15500sccm H
2deposition surface is cleaned;
● evacuation process passes into 500sccm argon gas, plays the effect that purifies sediment chamber;
● under applying argon gas state, ionize;
● vacuumize;
● fill under hydrogen state and ionize.
8. the plasma vapor deposition method for amorphous silicon battery deposition as claimed in claim 6, is characterized in that, also comprises following steps in sediment chamber's environmental treatment that described step deposition completes after having vacuumized:
Fill under hydrogen state and ionize, pass into nitrogen in sediment chamber, equilibrium air pressure, reduces room temp.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210399015.0A CN103774116B (en) | 2012-10-19 | 2012-10-19 | Plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210399015.0A CN103774116B (en) | 2012-10-19 | 2012-10-19 | Plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition |
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| CN103774116A true CN103774116A (en) | 2014-05-07 |
| CN103774116B CN103774116B (en) | 2016-09-21 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1339617A (en) * | 2000-06-12 | 2002-03-13 | 安捷伦科技有限公司 | Chemical gas phase deposit method for non-crystalline silicon and forming film |
| US20020096684A1 (en) * | 1995-12-20 | 2002-07-25 | Brandes George R. | Amorphous silicon carbide thin film articles |
| CN201801589U (en) * | 2010-09-25 | 2011-04-20 | 深圳市拓日新能源科技股份有限公司 | Amorphous-silicon film plasma enhanced chemical vapor deposition equipment |
| CN102194730A (en) * | 2010-03-15 | 2011-09-21 | 三星电子株式会社 | Substrate transfer container, gas purge monitoring tool, and semiconductor manufacturing equipment with the same |
| CN102208477A (en) * | 2011-05-26 | 2011-10-05 | 南开大学 | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof |
| CN102282676A (en) * | 2009-01-19 | 2011-12-14 | 欧瑞康太阳能股份公司(特吕巴赫) | Thin-film silicon tandem cell |
| CN202898537U (en) * | 2012-10-19 | 2013-04-24 | 陕西拓日新能源科技有限公司 | Plasma vapor deposition equipment for amorphous silicon battery deposition |
-
2012
- 2012-10-19 CN CN201210399015.0A patent/CN103774116B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020096684A1 (en) * | 1995-12-20 | 2002-07-25 | Brandes George R. | Amorphous silicon carbide thin film articles |
| CN1339617A (en) * | 2000-06-12 | 2002-03-13 | 安捷伦科技有限公司 | Chemical gas phase deposit method for non-crystalline silicon and forming film |
| CN102282676A (en) * | 2009-01-19 | 2011-12-14 | 欧瑞康太阳能股份公司(特吕巴赫) | Thin-film silicon tandem cell |
| CN102194730A (en) * | 2010-03-15 | 2011-09-21 | 三星电子株式会社 | Substrate transfer container, gas purge monitoring tool, and semiconductor manufacturing equipment with the same |
| CN201801589U (en) * | 2010-09-25 | 2011-04-20 | 深圳市拓日新能源科技股份有限公司 | Amorphous-silicon film plasma enhanced chemical vapor deposition equipment |
| CN102208477A (en) * | 2011-05-26 | 2011-10-05 | 南开大学 | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof |
| CN202898537U (en) * | 2012-10-19 | 2013-04-24 | 陕西拓日新能源科技有限公司 | Plasma vapor deposition equipment for amorphous silicon battery deposition |
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| CN103774116B (en) | 2016-09-21 |
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