CN203774246U - Plasma enhancement chemical vapor deposition device used for preparing low dielectric constant material - Google Patents
Plasma enhancement chemical vapor deposition device used for preparing low dielectric constant material Download PDFInfo
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- CN203774246U CN203774246U CN201420164948.6U CN201420164948U CN203774246U CN 203774246 U CN203774246 U CN 203774246U CN 201420164948 U CN201420164948 U CN 201420164948U CN 203774246 U CN203774246 U CN 203774246U
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- heater
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Abstract
The utility model discloses a plasma enhancement chemical vapor deposition device used for preparing a low dielectric constant material. The device comprises a furnace body and a liquid source injection mechanism which is located on one side of the furnace body. An induction coil is wound on the first half section of the furnace body. The induction coil is successively connected with a 13.36MHz radio frequency power supply and a matching device. The liquid source injection mechanism comprises a pressure stainless steel kettle, a first pressure gas mixing tank and a second pressure gas mixing tank. The other end of the first pressure gas mixing tank and one end of the pressure stainless steel kettle are connected through a pipeline provided with a thimble valve. The other end of the pressure stainless steel kettle is connected with a first nozzle through a pipeline provided with a thimble valve and a first mass flowmeter. One end of the second pressure gas mixing tank is provided with a third intake pipe and a fourth intake pipe. The other end of the second pressure gas mixing tank is connected with a second nozzle. According to the utility model, the device has the advantages of simple structure, convenient operation and low cost of manufacture and use; a liquid source is converted into a gas flow, wherein the flow and the rate of the liquid source are not easily controlled, but the flow and the rate of the gas flow can be easily controlled; and the dielectric constant value of a thin film can be conveniently and accurately controlled.
Description
Technical field
The utility model relates to a kind of plasma reinforced chemical vapour deposition apparatus for the preparation of advanced low-k materials, belongs to technical field of semiconductors.
Background technology
At IC interior, between different devices, be mainly to interconnect by plain conductor, along with constantly dwindling of integrated circuit manufacture process, distance and spacing between each interconnection line are not very dwindled, and the ghost effect that the interconnected resistance (R) that produced thus and electric capacity (C) produce is also more and more obvious.The delay bringing in order to reduce RC, further promotes the performance of integrated circuit (IC) chip, and the material with low-k (low-k) characteristic is constantly suggested and has obtained research widely.
The method that is generally used for preparing low-k (low-k) material film mainly contains vapour deposition process (CVD) and revolves two kinds of methods of Tu (spin-coating).Wherein, vapour deposition process, due to features such as the raw material using are relatively less, and deposit thickness is comparatively even, is widely used in semi-conductor industry.But the carbonaceous gas that is generally gaseous state usually used as the raw-material material of vapour deposition process is as methane, ethene, acetylene and silicon-containing gas be as silane etc., and this class material is owing to being that therefore gaseous state is unfavorable for storing transport and carrying under its normal pressure.Along with the development of semi-conductor industry, liquid source material has obtained increasing attention, but, how meet with liquid source material preparation the low-dielectric constant film that semiconductor technology requires and still there is certain difficulty.
Summary of the invention
The utility model object is to provide a kind of plasma reinforced chemical vapour deposition apparatus for the preparation of advanced low-k materials, this plasma reinforced chemical vapour deposition apparatus is simple in structure, simple operation, manufacture and cost of use low, realize the liquid fluid supply that is not easy to control flow and speed has been converted into the gas flow that is easy to control flow and speed, thus convenient accuracy controlling thin-film dielectric constant value.
For achieving the above object, the technical solution adopted in the utility model is: a kind of plasma reinforced chemical vapour deposition apparatus for the preparation of advanced low-k materials, comprise the sealed at both ends body of heater that end cap is installed, be positioned at the fluid supply injection equipment of body of heater one side, described body of heater first half section is wound with induction coil, this induction coil is connected to 13.36MHz radio-frequency power supply and adaptation successively, described fluid supply injection equipment comprises withstand voltage stainless steel still, the first withstand voltage mixed gas tank and the second withstand voltage mixed gas tank, this the first withstand voltage mixed gas tank one end connects the first air inlet pipe that the first mass flowmenter is all installed, the second air inlet pipe, the first withstand voltage mixed gas tank other end is connected by the pipeline that ejector pin valve is installed with withstand voltage stainless steel still one end, the withstand voltage stainless steel still other end is by being provided with ejector pin valve, the pipeline of the first mass flowmenter is connected to the first nozzle, described second withstand voltage mixed gas tank one end is connected and installed with the 3rd air inlet pipe, the 4th air inlet pipe of the second mass flowmenter, the described second withstand voltage mixed gas tank other end is connected to second nozzle, embeds in body of heater thereby described the first nozzle, second nozzle insert the end cap of described body of heater one end hermetically,
One vacuum pump is positioned at body of heater opposite side, connect described vacuum pump one end line seal insert in the end cap of the body of heater other end, a manual baffle valve.
In technique scheme, further improved plan is as follows:
1. in such scheme, an exhaust purifier is installed between end cap and vacuum pump.
2. in such scheme, on the pipeline between described end cap and vacuum pump, vacuum gauge is installed.
3. in such scheme, the power of described 13.36MHz radio-frequency power supply, adaptation is 25W ~ 300W.
4. in such scheme, described the first nozzle, second nozzle are stainless steel nozzle.
Because technique scheme is used, the utility model compared with prior art has following advantages and effect:
The utility model is for the preparation of the plasma reinforced chemical vapour deposition apparatus of advanced low-k materials, the liquid fluid supply that is not easy to control flow and speed is converted into the gas flow that is easy to control flow and speed by it, by composition and the flow of the each gas source of accuracy controlling, can accurately regulate and control the carbon content in deposited low-dielectric constant film layer, thereby accurately regulate and control the dielectric constant values of prepared low-dielectric constant film; Secondly, by composition and the flow of accuracy controlling carrier gas, the size of air-flow be can adjust, thereby the thickness of the low-dielectric constant film depositing, uniformity and deposition rate adjusted; Again, the adjustable composition of this precipitation equipment is many, and adjustable flow is many, and therefore control precision is high, and reliability and the accuracy of data are strong.This equipment also has simple in structure, simple operation, manufacture and cost of use low, economize in raw materials, the advantage such as reliability is strong, again, precipitation equipment is little in throughput, when vacuum degree is high, forward sample placement (inlet end) can be obtained to higher deposition rate, throughput is large, when low vacuum, sample can be obtained evenly by rear placement, slower deposition rate, thereby the sample of preparing has higher uniformity, do not need extra negative electrode substrate yet, therefore the requirement without any conductivity to sample, in addition, because relying on the natural gravity of negative ions, this device deposits, therefore the negative ions adsorptivity in plasma is identical, therefore the sample composition of preparing meets the requirement while formulating experiment more, its composition can be guaranteed.
Brief description of the drawings
Accompanying drawing 1 is the utility model plasma reinforced chemical vapour deposition apparatus structural representation.
In above accompanying drawing: 1, body of heater; 2, end cap; 3, fluid supply injection equipment; 4, induction coil; 5,13.36MHz radio-frequency power supply; 6, adaptation; 7, withstand voltage stainless steel still; 8, the first withstand voltage mixed gas tank; 9, the second withstand voltage mixed gas tank; 101, the first mass flowmenter; 102, the second mass flowmenter; 111, the first air inlet pipe; 112, the second air inlet pipe; 12, ejector pin valve; 13, the first nozzle; 141, the 3rd air inlet pipe; 15, second nozzle; 16, exhaust purifier; 17, vacuum pump; 18, vacuum gauge; 19, manual gear plate valve.
Embodiment
Below in conjunction with embodiment, the utility model is further described:
Embodiment: a kind of plasma reinforced chemical vapour deposition apparatus for the preparation of advanced low-k materials, comprise the sealed at both ends body of heater 1 that end cap 2 is installed, be positioned at the fluid supply injection equipment 3 of body of heater 1 one sides, described body of heater 1 first half section is wound with induction coil 4, this induction coil 4 is connected to 13.36MHz radio-frequency power supply 5 and adaptation 6 successively, described fluid supply injection equipment 3 comprises withstand voltage stainless steel still 7, the first withstand voltage mixed gas tank 8 and the second withstand voltage mixed gas tank 9, these the first withstand voltage mixed gas tank 8 one end connect the first air inlet pipe 111 that the first mass flowmenter 101 is all installed, the second air inlet pipe 112, first withstand voltage mixed gas tank 8 other ends are connected by the pipeline that ejector pin valve 12 is installed with withstand voltage stainless steel still 7 one end, withstand voltage stainless steel still 7 other ends are by being provided with ejector pin valve 12, the pipeline of the first mass flowmenter 101 is connected to the first nozzle 13, described second withstand voltage mixed gas tank 9 one end are connected and installed with the 3rd air inlet pipe 141, the 4th air inlet pipe of the second mass flowmenter 102, described second withstand voltage mixed gas tank 9 other ends are connected to second nozzle 15, embed in body of heater thereby described the first nozzle 13, second nozzle 15 insert the end cap of described body of heater one end hermetically,
One vacuum pump 17 is positioned at body of heater 1 opposite side, connect described vacuum pump 17 one end line seal insert in the end cap 2 of body of heater 1 other end, a manual baffle valve 19.
One exhaust purifier 16 is installed between end cap 2 and vacuum pump 17.
On pipeline between above-mentioned end cap 2 and vacuum pump 17, vacuum gauge 18 is installed.
The power of above-mentioned 13.36MHz radio-frequency power supply 5, adaptation 6 is 25W ~ 300W.
Above-mentioned the first nozzle 13, second nozzle 15 are stainless steel nozzle.
Growth course is as follows:
Whole growth course is carried out in body of heater 1, before depositing, first tetraethoxysilane mixed with the ratio of volume ratio 1:1 with cyclohexane and inject in withstand voltage stainless steel still 7, closeall ejector pin valve 12, the first mass flowmenter 101 and the second mass flowmenter 102.Open manual gear plate valve 19 and vacuum pump 17, when vacuum degree shown in vacuum gauge 18 is less than 10
-3when Pa, start 13.36MHz radio-frequency power supply 5 and adaptation 6, open the second mass flowmenter 102, pass into argon gas according to technological requirement the 3rd air inlet pipe 141, flow set is 2 ~ 5sccm, and the 4th air inlet pipe passes into nitrogen, and flow set is 2 ~ 5sccm.Ventilate after 10 minutes emptying body of heater 1 survival gas, open successively the first mass flowmenter 101, ejector pin valve 12, the first mass flowmenter 101, pass into nitrogen according to technological requirement the first air inlet pipe 111, flow set is 8 ~ 10sccm, the second air inlet pipe 112 passes into methane, flow set is 5 ~ 8sccm, quality flowmeter flow quantity is adjusted into 20 ~ 50sccm, deposit 10 minutes, after deposition finishes, close 13.36Mhz radio-frequency power supply, close gas circuit valve and each valve, close manual gear plate valve 19, to body of heater 1 processing of exitting, in the time that body of heater 1 internal pressure returns to atmospheric pressure, open end cap 2, sample is transferred to body of heater 1 to be heated in warm area, close end cap 2, open manual gear plate valve 19, body of heater is vacuumized to processing, when vacuum degree shown in vacuum gauge 18 is less than 10
-3when Pa, start body of heater 1 heating steady temperature and carry out annealing in process 60 minutes in 400 ° of C.In the time that annealing finishes body of heater 1 temperature retrieval to room temperature, close vacuum pump, close manual gear plate valve 19, to body of heater 1 processing of exitting, in the time that body of heater 1 internal pressure returns to atmospheric pressure, open end cap 2, take out sample and can test the dielectric constant values of sample, gained dielectric constant values is 2.28.
Above-described embodiment is only explanation technical conceive of the present utility model and feature, and its object is to allow person skilled in the art can understand content of the present utility model and implement according to this, can not limit protection range of the present utility model with this.All equivalences of doing according to the utility model Spirit Essence change or modify, within all should being encompassed in protection range of the present utility model.
Claims (5)
1. the plasma reinforced chemical vapour deposition apparatus for the preparation of advanced low-k materials, it is characterized in that: comprise the sealed at both ends body of heater (1) that end cap (2) are installed, be positioned at the fluid supply injection equipment (3) of body of heater (1) one side, described body of heater (1) first half section is wound with induction coil (4), this induction coil (4) is connected to 13.36MHz radio-frequency power supply (5) and adaptation (6) successively, described fluid supply injection equipment (3) comprises withstand voltage stainless steel still (7), the first withstand voltage mixed gas tank (8) and the second withstand voltage mixed gas tank (9), this the first withstand voltage mixed gas tank (8) one end connects the first air inlet pipe (111) that the first mass flowmenter (101) is all installed, the second air inlet pipe (112), first withstand voltage mixed gas tank (8) other end is connected by the pipeline that ejector pin valve (12) is installed with withstand voltage stainless steel still (7) one end, withstand voltage stainless steel still (7) other end is by being provided with ejector pin valve (12), the pipeline of the first mass flowmenter (101) is connected to the first nozzle (13), described second withstand voltage mixed gas tank (9) one end is connected and installed with the 3rd air inlet pipe (141), the 4th air inlet pipe of the second mass flowmenter (102), described second withstand voltage mixed gas tank (9) other end is connected to second nozzle (15), described the first nozzle (13), second nozzle (15) thus the end cap that inserts hermetically described body of heater one end embeds in body of heater,
One vacuum pump (17) is positioned at body of heater (1) opposite side, and the line seal ground that connects described vacuum pump (17) one end inserts in the end cap (2) of body of heater (1) other end, a manual baffle valve (19).
2. plasma reinforced chemical vapour deposition apparatus according to claim 1, is characterized in that: an exhaust purifier (16) is installed between end cap (2) and vacuum pump (17).
3. plasma reinforced chemical vapour deposition apparatus according to claim 1, is characterized in that: on the pipeline between described end cap (2) and vacuum pump (17), vacuum gauge (18) is installed.
4. plasma reinforced chemical vapour deposition apparatus according to claim 1, is characterized in that: the power of described 13.36MHz radio-frequency power supply (5), adaptation (6) is 25W ~ 300W.
5. plasma reinforced chemical vapour deposition apparatus according to claim 1, is characterized in that: described the first nozzle (13), second nozzle (15) are stainless steel nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420164948.6U CN203774246U (en) | 2014-04-08 | 2014-04-08 | Plasma enhancement chemical vapor deposition device used for preparing low dielectric constant material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420164948.6U CN203774246U (en) | 2014-04-08 | 2014-04-08 | Plasma enhancement chemical vapor deposition device used for preparing low dielectric constant material |
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| CN203774246U true CN203774246U (en) | 2014-08-13 |
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| CN201420164948.6U Expired - Fee Related CN203774246U (en) | 2014-04-08 | 2014-04-08 | Plasma enhancement chemical vapor deposition device used for preparing low dielectric constant material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887139A (en) * | 2014-04-08 | 2014-06-25 | 苏州大学 | Plasma enhancing chemical vapor deposition device for preparing low-dielectric-constant materials |
| CN106521456A (en) * | 2016-11-18 | 2017-03-22 | 北京大学 | Multifunctional large-sized chemical vapor deposition equipment with air inlet mode and pressure capable of being adjusted |
| CN113147211A (en) * | 2021-05-07 | 2021-07-23 | 电子科技大学 | Be applied to integrated equipment of volume to volume preparation paper base RFID label antenna |
-
2014
- 2014-04-08 CN CN201420164948.6U patent/CN203774246U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887139A (en) * | 2014-04-08 | 2014-06-25 | 苏州大学 | Plasma enhancing chemical vapor deposition device for preparing low-dielectric-constant materials |
| CN103887139B (en) * | 2014-04-08 | 2017-01-11 | 苏州大学 | Plasma enhancing chemical vapor deposition device for preparing low-dielectric-constant materials |
| CN106521456A (en) * | 2016-11-18 | 2017-03-22 | 北京大学 | Multifunctional large-sized chemical vapor deposition equipment with air inlet mode and pressure capable of being adjusted |
| CN113147211A (en) * | 2021-05-07 | 2021-07-23 | 电子科技大学 | Be applied to integrated equipment of volume to volume preparation paper base RFID label antenna |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140813 Termination date: 20210408 |