CN201801589U - Amorphous-silicon film plasma enhanced chemical vapor deposition equipment - Google Patents
Amorphous-silicon film plasma enhanced chemical vapor deposition equipment Download PDFInfo
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- CN201801589U CN201801589U CN2010205404600U CN201020540460U CN201801589U CN 201801589 U CN201801589 U CN 201801589U CN 2010205404600 U CN2010205404600 U CN 2010205404600U CN 201020540460 U CN201020540460 U CN 201020540460U CN 201801589 U CN201801589 U CN 201801589U
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Abstract
The utility model is applicable to the production field of solar cells and provides amorphous-silicon film plasma enhanced chemical vapor deposition equipment. The amorphous-silicon film plasma enhanced chemical vapor deposition equipment comprises a plasma cavity, a heating system, a gas path system, a vacuum system, a power supply system and a fixture; the plasma cavity is an airtight cylindrical single-cavity chamber and is connected with the vacuum system and the gas path system; the fixture is arranged in the plasma cavity; the heating system is an oil tank with a heater and is arranged below the plasma cavity; the power supply system comprises multiple control units; multiple power supply ports are formed on the fixture; and the multiple control units are connected with the multiple power supply ports in one-to-one correspondence respectively. Through the amorphous-silicon film plasma enhanced chemical vapor deposition equipment, a large-size amorphous-silicon film solar-cell panel can be deposited, uniform thickness and stable quality of the deposited film can be ensured and the production efficiency is improved.
Description
Technical field
The utility model relates to the manufacture of solar cells field, more particularly, relates to a kind of amorphous silicon membrane plasma enhanced chemical vapor deposition equipment.
Background technology
In recent years, sun power obtains utilizing in a lot of fields as a kind of new energy.Along with the photovoltaic industry fast development, utilizing sun power to carry out opto-electronic conversion is again a kind of topmost mode that sun power is utilized for the mankind provide electric energy, and the basic device of realizing this switching process is exactly a solar cell.Solar cell is permanent because of having, the advantage of spatter property and handiness becomes a kind of coming novel power supply.
Solar panel is the core of solar cell, and its effect is to be electric energy with conversion of solar energy, or is sent in the store battery and stores, or promotes loaded work piece.Solar panel (Solar panel) mainly is divided into crystal silicon cell plate and hull cell plate.Wherein thin-film solar cell panel is soaring rapidly with the proportion of its cheap cost in the photovoltaic industry, and along with the trend of industry development energy-conservation and that save cost, the development of thin-film solar cells will become main flow.In the process of making thin-film solar cell panel, can use the plasma enhanced chemical vapor deposition method, this method has advantages such as temperature of reaction is low, sedimentation rate is fast, quality of forming film is good.
Certainly, utilize plasma enhanced chemical vapor deposition method (PECVD) to make thin-film solar cell panel and can relate to the plasma enhanced chemical gas phase equipment of using, this equipment integration the technology of each side such as vacuum, chemistry, physics, machinery, electrical equipment, high frequency, be a very complicated system.From present development, also there are a lot of problems in the plasma enhanced chemical gas phase equipment that amorphous silicon thin-film solar cell is used during fabrication, such as: can not deposit the large size amorphous silicon membrane, deposit film is in uneven thickness, quality is unstable, production efficiency is lower etc.Independent development is produced the plasma enhanced chemical gas phase equipment of solar cell; equipment manufacture and the solar energy industry chain overall technology that promotes China's sun power industry had great pushing effect; can also reduce of the dependence of China's solar energy industry to import equipment; strengthen the competitiveness in the international market of industry; promote the development of domestic solar energy, alleviate the energy and use crisis.
The utility model content
Technical problem to be solved in the utility model is to provide a kind of amorphous silicon membrane plasma enhanced chemical vapor deposition equipment, utilize this equipment, can deposit the large size amorphous silicon membrane, and sedimentary film thickness is even, steady quality, and can enhances productivity.
For solving the problems of the technologies described above, the technical scheme of employing of the present utility model is: a kind of amorphous silicon membrane plasma enhanced chemical vapor deposition equipment is provided, comprise a plasma chamber body, heating system, air-channel system, vacuum system, power supply system, anchor clamps, described plasma chamber is the single chamber of sealable round shape, link to each other with vacuum system and air-channel system, described anchor clamps place in the described plasma chamber, described heating system is one to be provided with the fuel tank of well heater, be arranged at described plasma chamber below, described power supply system is made up of a plurality of control units, described anchor clamps are provided with a plurality of power supply ports, and a plurality of power supply ports are corresponding one by one is connected with this respectively for these a plurality of control units.
Further, described anchor clamps comprise by biside plate, the metal shell that one front apron and a bonnet constitute, described metal shell surrounds in the cavity of formation and is provided with a gas path plate, plurality of electrodes, described biside plate, front apron, bonnet, gas path plate insulation in twos mutually connects, has equally distributed through hole on the described gas path plate, described plurality of electrodes is arranged by a plurality of conducting plates and is formed, parallel with described biside plate, and constitute electrode jointly with described biside plate, space between adjacent two electrodes is for placing the position of waiting to deposit cell substrates, on described front apron, be provided with a plurality of electrode ports that adopt the non-interfering type power supply.
Further, be equipped with a chamber door, be provided with interlock between described chamber door and the described plasma chamber in the side of described plasma chamber.
Further, two one group at the electrode of described anchor clamps connects separately respectively with described power supply port.
Further, be provided with guide rail by bottom position on the length direction of chamber in the described plasma chamber, the bottom of described anchor clamps is provided with a plurality of wheels, and matches with described guide rail.
The amorphous silicon membrane plasma enhanced chemical vapor deposition equipment that the utility model provides be the single chamber of round shape because plasma chamber adopts, thereby the stress that can guarantee vacuum state chamber wall is even; Adopt oily type of heating to heat, improved the accuracy and the homogeneity of temperature; Power supply system adopts respectively organizes the electrode non-interference design of power supply separately, effectively guarantees the homogeneity of plasma body; Also adopted the plate electrode anchor clamps simultaneously, the design of whole plant can deposit large size amorphous silicon thin-film solar cell plate, and can guarantee that sedimentary film thickness is even, steady quality, and enhances productivity.
Description of drawings
The perspective view of the amorphous silicon membrane plasma enhanced chemical vapor deposition equipment that Fig. 1 provides for the utility model embodiment;
The perspective view of the thin-film solar cell panel deposition clamp in the amorphous silicon membrane plasma enhanced chemical vapor deposition equipment that Fig. 2 provides for the utility model embodiment.
Embodiment
In order to make technical problem to be solved in the utility model, technical scheme and beneficial effect clearer,, the utility model is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
With reference to Fig. 1, the perspective view of the amorphous silicon membrane plasma enhanced chemical vapor deposition equipment that provides for the utility model.Describedly contain the amorphous silicon membrane plasma enhanced chemical vapor deposition equipment that the utility model provides, comprise housing 101, plasma chamber 102, heating system 103, air-path control system 104, vacuum system 105, power supply system 106, anchor clamps 107.
As shown in Figure 1, entire equipment is cube shaped, plasma chamber 102 is located at the position, middle and upper part of equipment, be single chamber design, whole deposition process can be finished in this chamber, and its chamber wall is a round shape, and this cylindrical design can guarantee at the stress of vacuum state cavity of resorption wall even, plasma chamber is sealable cavity simultaneously, prevents gas leakage.
Air-path control system 104 is an air regulating device, by this device, can strive the needs to the different depositional phases, controls feed the intravital deposition gases of plasma chamber according to production requirement, as the flow of adjustments of gas, component etc.Also play simultaneously the effect of 102 internal gas pressures in the control plasma chamber, general air pressure is controlled at 50～100Pa.
Referring to Fig. 1, power supply system 106 mainly comprises one group of radio-frequency power supply, is located at the below of air-path control system, and a radio-frequency power supply is a control unit.By these radio-frequency power supplies, can preestablish the deposition parameter of P, I, N trilamellar membrane, as glow power, aura time etc.Electrode ports coupling on this group radio-frequency power supply and the anchor clamps 107 is joined and is the electrode power supply in the anchor clamps 107, because what adopt is that each radio-frequency power supply is powered separately to every counter electrode port of anchor clamps 107 respectively, this is designed to non-interference powering mode, can guarantee that the voltage between the interior every counter electrode of anchor clamps is stable in the discharge process, thereby guarantee the homogeneity of plasma body, also be convenient to handle the problem that each power supply unit occurs simultaneously.
Referring to Fig. 1, anchor clamps 107 are box-type design, are used for the substrate that clamping is treated sedimentary solar cell, when deposition, can operate among putting the anchor clamps that install substrate into plasma chamber 102, and are comparatively convenient.Simultaneously, on anchor clamps, be provided with a plurality of power supply ports, these power supply ports respectively with corresponding one by one being connected of each control unit of power supply system.
The amorphous silicon membrane plasma enhanced chemical vapor deposition equipment that the utility model embodiment provides, single chamber design of employing drum guarantees that the stress of vacuum state cavity of resorption wall is even; Adopt the fuel tank design and utilize the mode of oil heat in chamber, to transmit heat, improved the accuracy and the homogeneity of temperature; Power supply system adopts non-interference design, guarantees the stable of voltage between every group of depositing electrode, effectively guarantees the homogeneity of plasma body.
With reference to Fig. 2, a kind of preferred structure as the utility model embodiment, anchor clamps 107 comprise the metal shell that is made of first side plate 2011, second side plate 2012, a front apron 202 and a bonnet (not shown), this metal shell surrounds in the cavity of formation and is provided with a gas path plate 203, plurality of electrodes (not shown), first side plate 2011, second side plate 2012, front apron 202, bonnet, gas path plate 203 insulation in twos mutually connect, to avoid short circuit; Plurality of electrodes is arranged by a plurality of conducting plates and is formed, parallel with first side plate 2011 with second side plate 2012, and constitute electrode jointly with biside plate, space between adjacent two electrodes is for placing the position of waiting to deposit cell substrates, because electrode is a plate electrode, effectively guarantees the homogeneity of plasma body between electrode, and can deposit the same big thin-film solar cell panel with electrode plate of overall dimension, stock size is 0.6m * 1.2m or 1.1m * 1.4m, and film thickness is even; 203 have equally distributed through hole on the gas path plate, can allow deposition gases be distributed in equably between each electrode like this, further be beneficial to and form the uniform film of thickness on cell substrates; The electrode ports 204 of non-interfering type power supply is arranged on the front apron 202.Utilize this anchor clamps, can adjust each quantity that at most can sedimentary cell substrates by the quantity that adjustment is provided with electrode.Facts have proved, nearly 23 electrodes can be set between these anchor clamps biside plate, can place two cell substrates between adjacent two electrodes, can primary depositing 48, day output can reach 240, has improved productivity widely.
With reference to Fig. 1,, be equipped with a chamber door 108 in the side of plasma chamber 102 as the further improvement of the utility model embodiment, chamber door 108 is rounded, and and being provided with safety mutually-locking device between the plasma chamber 102, ion cavity 102 is a sealed state after the interlocking, prevents gas leakage.Chamber door 108 is set, mainly also is the convenient anchor clamps 107 of in plasma chamber 102, putting into and take out, can improve the security of production when improving mechanization degree.This interlock can be realized by rly. and electro-magnet.
As the further improvement of the utility model embodiment, two one group at the electrode of anchor clamps 107 connects separately respectively with power supply port 4.This non-connecting mode can allow each port power to two electrodes that connected independently, and another group electrode was affected and can not normally carries out work when this non-interfering type power supply mode can avoid one group of electrode to go wrong.
With reference to Fig. 2, further improvement as the utility model embodiment, anchor clamps 107 bottoms be provided with plasma chamber 102 at least two rotating shafts 205 of being used of guide rail, each rotating shaft two ends is provided with wheel 206, simultaneously, in plasma chamber 102, two parallel guide rails are set on the length direction of chamber, place with the turnover that makes things convenient for anchor clamps 107 by bottom position, make that the operation of equipment is more convenient, mechanization degree improves.
This equipment uses according to following process operation: before carrying out the amorphous silicon membrane deposition, to put into temperature be 100～200 ℃ holding furnace insulation ten minutes for back integral body in the anchor clamps 107 with treating sedimentary substrate film glass to pack into; Then anchor clamps 107 are taken out from holding furnace, utilize the wheel 7 of its bottom and the guide rail in the plasma chamber 102 that anchor clamps are pushed within the plasma chamber 102, connect electrode and fasten chamber door 108; Start vacuum system 105, the air of extracting out in the plasma chamber 102 requires vacuum tightness until reaching; Pre-set the deposition parameter for the treatment of sedimentary P, I, N trilamellar membrane by the radio-frequency power supply in the power supply system 106, as glow power, aura time, feed P layer film deposition gases by air-path control system 104 then, air pressure is controlled at 50～100Pa, start radio-frequency power supply power supply beginning to deposit P tunic, the waste gas of generation is discharged cavity by vacuum system 105; Treat that P layer deposition finish, regulate the flow and the component that feed gases by air-path control system 104 again and continue deposition I, N layer.Deposition finishes, and opens chamber door 108 and takes out anchor clamps 107, treat anchor clamps 107 coolings after, can take out the good glass of deposition, thereby finish a round-robin operating process.
To sum up, the amorphous silicon membrane plasma enhanced chemical vapor deposition equipment that the utility model provides not only has the advantage that above-mentioned each scheme is introduced, and on the whole, cost performance also improves greatly, can realize the production of domesticizing fully, reduces the dependence of China's solar energy industry to import equipment.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection domain of the present utility model.
Claims (6)
1. amorphous silicon membrane plasma enhanced chemical vapor deposition equipment, comprise a plasma chamber body, heating system, air-channel system, vacuum system, power supply system, anchor clamps, it is characterized in that: described plasma chamber is the single chamber of sealable round shape, link to each other with vacuum system and air-channel system, described anchor clamps place in the described plasma chamber, described heating system is one to be provided with the fuel tank of well heater, be arranged at described plasma chamber below, described power supply system is made up of a plurality of control units, described anchor clamps are provided with a plurality of power supply ports, and a plurality of power supply ports are corresponding one by one is connected with this respectively for these a plurality of control units.
2. amorphous silicon membrane plasma enhanced chemical vapor deposition equipment according to claim 1, it is characterized in that: described anchor clamps comprise by biside plate, the metal shell that one front apron and a bonnet constitute, described metal shell surrounds in the cavity of formation and is provided with a gas path plate, plurality of electrodes, described biside plate, front apron, bonnet, gas path plate insulation in twos mutually connects, described plurality of electrodes is arranged by a plurality of conducting plates and is formed, parallel with described biside plate, and constitute electrode jointly with described biside plate, space between adjacent two electrodes is for placing the position of waiting to deposit cell substrates, has equally distributed through hole on the described gas path plate, on described front apron, be provided with a plurality of electrode ports that adopt the non-interfering type power supply.
3. amorphous silicon membrane plasma enhanced chemical vapor deposition equipment according to claim 1 and 2 is characterized in that: be equipped with a chamber door in the side of described plasma chamber, be provided with interlock between described chamber door and the described plasma chamber.
4. amorphous silicon membrane plasma enhanced chemical vapor deposition equipment according to claim 2 is characterized in that: two one group at the electrode of described anchor clamps connects separately respectively with described power supply port.
5. according to claim 1 or 2 or 4 each described amorphous silicon membrane plasma enhanced chemical vapor deposition equipments, it is characterized in that: on the length direction of chamber, be provided with guide rail by bottom position in the described plasma chamber, the bottom of described anchor clamps is provided with a plurality of wheels, and matches with described guide rail.
6. amorphous silicon membrane plasma enhanced chemical vapor deposition equipment according to claim 3, it is characterized in that: on the length direction of chamber, be provided with guide rail by bottom position in the described plasma chamber, the bottom of described anchor clamps is provided with a plurality of wheels, and matches with described guide rail.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205404600U CN201801589U (en) | 2010-09-25 | 2010-09-25 | Amorphous-silicon film plasma enhanced chemical vapor deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205404600U CN201801589U (en) | 2010-09-25 | 2010-09-25 | Amorphous-silicon film plasma enhanced chemical vapor deposition equipment |
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| Publication Number | Publication Date |
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| CN201801589U true CN201801589U (en) | 2011-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010205404600U Expired - Lifetime CN201801589U (en) | 2010-09-25 | 2010-09-25 | Amorphous-silicon film plasma enhanced chemical vapor deposition equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103774116A (en) * | 2012-10-19 | 2014-05-07 | 陕西拓日新能源科技有限公司 | Plasma vapor deposition apparatus used for amorphous silicon battery deposition, and method thereof |
-
2010
- 2010-09-25 CN CN2010205404600U patent/CN201801589U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103774116A (en) * | 2012-10-19 | 2014-05-07 | 陕西拓日新能源科技有限公司 | Plasma vapor deposition apparatus used for amorphous silicon battery deposition, and method thereof |
| CN103774116B (en) * | 2012-10-19 | 2016-09-21 | 陕西拓日新能源科技有限公司 | Plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110420 |
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| CX01 | Expiry of patent term |