CN103765143B - 具有外壳集成冷却系统的炉系统 - Google Patents

具有外壳集成冷却系统的炉系统 Download PDF

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CN103765143B
CN103765143B CN201280038052.7A CN201280038052A CN103765143B CN 103765143 B CN103765143 B CN 103765143B CN 201280038052 A CN201280038052 A CN 201280038052A CN 103765143 B CN103765143 B CN 103765143B
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cooling
air
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CN103765143A (zh
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T·R·多尔蒂
D·J·布特兰德
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BTU International Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
    • F27B9/24Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace being carried by a conveyor
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
    • F27B9/24Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace being carried by a conveyor
    • F27B9/243Endless-strand conveyor
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00Arrangement of elements for electric heating in or on furnaces
    • F27D11/12Arrangement of elements for electric heating in or on furnaces with electromagnetic fields acting directly on the material being heated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30Details, accessories, or equipment peculiar to furnaces of these types
    • F27B9/36Arrangements of heating devices
    • F27B2009/3607Heaters located above the track of the charge
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D9/00Cooling of furnaces or of charges therein
    • F27D2009/0002Cooling of furnaces
    • F27D2009/0005Cooling of furnaces the cooling medium being a gas
    • F27D2009/0008Ways to inject gases against surfaces

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Abstract

本发明提供了一种红外线焙烧炉,其包括外壳集成冷却系统,以在冷却过程中提供作为第一步的高性能的冷却。所述冷却系统包括冷却歧管,该冷却歧管被集成到外壳中并由与邻近的焙烧区相同的材料制成。因为冷却系统由与外壳其余部分相同的材料制成,所述冷却系统可应付被暴露在较高的温度下。所述冷却系统定位成使得其出口的平面相对于下方通过的产品处在特定间隙的水平面处。当产品从冷却歧管下经过时,空气的高压冷却射流朝向产品被向下引导,从而迅速地把产品的温度从较高的焙烧温度降低,并且最小化产品在较高的温度下的滞留时间。

Description

具有外壳集成冷却系统的炉系统
背景技术
太阳能电池或光伏电池通过在太阳能电池晶片的顶部和底部上以期望的图案沉积导电油墨而制造。将晶片在炉系统中热处理以干燥导电油墨并且烧掉粘结剂和其他材料,然后材料被焙烧以在晶片表面上形成金属化图案。用于这种金属化工艺的炉系统通常使用红外线加热灯以提供处理晶片所需的快速热处理环境。
已知的晶片焙烧炉通常具有的特点为包括三段:在入口处的干燥区,在所述入口处将晶片装入炉内;燃尽/焙烧区,其一般被认为是中间区;以及位于末端处并具有取出晶片的出口的冷却段。在一些晶片焙烧炉中,单带输送机用于移动晶片来穿过所述各段,并且因此,晶片以相同的速度移动穿过各段。可选地,考虑到带速取决于段的变化,已知的多带结构中单独的带运行穿过每段。
已知的是,晶片应在其已达到其最高温度后被迅速冷却,从而确保最高质量的晶片。然而,由于把晶片从燃尽/焙烧区转移到冷却区所必需的时间,已知的炉导致已加热的晶片滞留在这种高温下。
所需要的是一个晶片处理炉,其提供了温度下的最小滞留时间连同非常快的冷却曲线。
发明内容
红外焙烧炉包括外壳集成冷却系统,以在冷却过程中提供作为第一步的高性能的冷却。该冷却系统包括冷却歧管,所述冷却歧管被集成到外壳中并由与邻近的焙烧区相同的外壳材料制成。因为冷却系统由与外壳其余部分相同的材料制成,所述冷却歧管可以应付被暴露于较高的温度。所述冷却系统定位成使得其出口的平面相对于下方通过的产品处在特定间隙的水平面处。当产品从冷却歧管下经过时,空气的高压冷却射流朝向产品被向下引导,从而迅速地把产品的温度从较高的焙烧温度降低,并且最小化产品在较高温度下的滞留时间。
附图说明
参照以下描述结合附图可以更好地理解本发明的各实施例,其中:
图1是根据本发明实施例的红外线炉的框图;
图2是图1的红外线炉的局部剖视图;
图3是根据本发明实施例的外壳集成冷却歧管的分解图;
图4A-4C示出了根据本发明实施例的梯状通气件的分解图;
图5A是外壳集成冷却歧管的示意性侧视图;并且
图5B表示外壳集成冷却歧管的冷却曲线。
应当理解的是,为了简单和清晰地说明,在附图中所示的元件不一定被准确地或按比例地绘制。例如,一些元件的尺寸可能为了清晰起见而相对于其它元件被夸大,或者几个物理组件可以被包括在一个功能块或元件中。此外,在被认为适当的地方,附图标记在附图中重复出现以指示相应的或类似的元件。此外,一些在附图中示出的块可以被组合成单一的功能。
具体实施方式
在下面的详细描述中提出了许多具体细节以便彻底理解本发明的各种实施例。本领域普通技术人员所理解的是,本发明的各实施例可以在没有这些具体细节的情况下被实施。在其他情况下,公知的方法、步骤、组件和结构可能没有被详细描述,以便不混淆本发明的各实施例的细节。
根据本发明各种的实施例,炉具备有外壳集成的冷却系统以在冷却过程中提供作为第一步的高性能的冷却。所述冷却系统包括冷却歧管,该冷却歧管被集成到外壳中并由与焙烧区相同的外壳材料制成,并毗邻焙烧区设置。因为冷却歧管由与外壳其余部分相同的材料制成,所述冷却歧管可以应付被暴露于较高的温度。冷却歧管定位成使得其出口的平面相对于下方通过的产品处在特定间隙的水平面处。当产品从冷却歧管下经过时,空气的高压冷却射流朝向产品被向下引导,从而迅速地把产品的温度从较高的焙烧温度降低,藉此最小化产品在较高温度下的滞留时间。外壳可以由绝热体砖或其它已知的绝热材料制成。
现在参照图1,根据本发明一个实施例的红外线炉系统100包括通常已知为相继连续布置的干燥段102、燃尽/焙烧段104和冷却段106。高性能对流(HPC)冷却器段108位于冷却段106之后。
在操作中,要处理的工件(诸如晶片或其它物体或产品)被放入干燥段102起始处的开口110中,并且例如借助输送带等从一个段向前移动到下一段。如通常所知的,晶片例如取决于工艺、技术和晶片类型而暴露于不同的气体和温度下。然而,处理晶片的详情对于本发明实施例中的操作或描述而言没有必要,如以下将更详细描述的。晶片从段106进入HPC冷却器段108中,然后处理过的晶片在开口112处从HPC冷却器段108离开。
现在参照图2,示出了炉100的剖视图。在操作中,工件202(即,要处理的物体或产品,诸如太阳能电池晶片)被提供给干燥段102的入口110并通过传送带204在一个或多个加热器下被传送,所述传送带204限定了炉膛线(hearthline),在本实施例中,所述加热器是具有玻璃陶瓷盖的电线圈加热器。所述加热器沿干燥器段102的长度被设置在传送带的上方和下方,以加热工件202的顶部和底部。
在干燥器段102的末端,工件202被传送到燃尽/焙烧段104,燃尽/焙烧段104有时被称为“焙烧处理”段。燃尽/焙烧段104包括一排红外线加热灯206,所述红外线加热灯206设在用于加热被输送经过燃尽/焙烧段104的工件202的上段和下段的每个中。尽管所示的只有一个区域,但燃尽/焙烧段104可具有多个区域,藉此提供具有可依照期望的工艺来对工件202提供温度曲线的不同温度的不同区域。
当工件202已到达燃尽/焙烧段104的末端时,它被输送到冷却系统106。工件202的温度在冷却段106中迅速被降低至约600℃。冷却段106包括如下会讨论的空气充气室209。有利地,工件202当其在空气充气室209的下方通过时被迅速地冷却下来。
HPC冷却器108包括梯状充气室216,当工件202在传送带230上经过该段时,所述梯状充气室216把高速冷却空气朝向工件202向下引导。被向下引导的空气用于冲击以便冷却以及用于冲击以便在较低速度的空气通过传送带230向上流动时提供压制力。上空气充气室218收集空气,并将其引导到上换热器220以进一步从空气中除去热量。换热器220运行从而把热量从炉中直接移出至室内环境大气或经过HVAC系统。下空气充气室222提供空气到下换热器224,以便以高流量但低流速来提供均匀的冷却空气,从而冷却运行穿过HPC冷却器108的带。梯状充气室216将均匀分布的空气向下提供在工件202上。
多个排气墩208被提供在燃尽/焙烧段104和冷却段106之间,以便防止由空气充气室209向下引导到工件202上的冷却气体或空气干扰燃尽/焙烧段104中的工艺气体。
现在参照图3,空气充气室209包括上空气充气室部210和下空气充气室部212。上、下空气充气室部210、212一起形成空腔301,空气经由开口302、304被引入所述空腔301,然后通过多个喷射孔214被向下引导到工件202上。上、下部210、212由与外壳其余部分相同的材料,例如绝热砖制成,以便使空气充气室209能应付与邻近燃尽/焙烧段104相关的高温。可替代地,可以只提供一个开口302用于将空气引入到空腔301中。
如图4A-4C所示,梯状充气室216包括多个充气横档402,所述充气横档402的每个包括多个用于将空气向下朝向工件202引导的横档喷口404。每个横档402具有至少一个入口406,通过所述入口406来提供空气以便穿过横档喷口404将空气向下朝向工件202引导。一个或多个鼓风机推动空气通过管道(未示出),所述管道与该梯状充气室216的每一侧流体连接从而通过入口406提供空气。充气横档402彼此间隔开以允许回流空气,例如允许被温热的工件202反射离开的空气穿过横档402朝向上空气充气室218和上换热器220向上通过。充气横档402之间的空间允许不受限制的低速流。这个开放的梯状结构最小化了可能会导致工件202在传送带230上移动的涡流。
现在参照图5A和5B,曲线图502表示工件202的温度,当工件202在空气充气室209下方通过时,工件202的温度从其焙烧温度TFIRE非常迅速地下降到期望的冷却温度TCOOL。在本发明一个实施例中,空气充气室209具有126mm的宽度(W)。有利地,工件在它被转移到HPC冷却器段108之前,不在其焙烧温度TFIRE下滞留比必要时间更长的时间。
应当指出的是,本发明的各实施例不限于处理晶片的焙烧炉,而是可以用于处理其它类型的产品的其它类型的熔炉来实施。
为了清楚起见,本发明已经在各分开的实施例的上下文中描述了的特定特征也可以以组合的方式在单个实施例中提供。反过来,为简洁起见,本发明在单个实施例的上下文中描述的各种特征也可以单独地或以任何合适的次级组合方式来提供。
应当理解的是,这里论述的各种方法和装置的具体实施例不限于应用到下文所提出的或在附图中所图示的构造的细节以及部件或步骤的安排中。所述方法和装置能够按照各种方式由正被实行或执行的其他实施例来实现。具体实现方式或实施例的示例仅为示意目的而提供于此并且不旨在进行限制。与这些实施例中的任何一个相关联的所讨论的特定领域、元件和特征都不旨在从任何其它实施例中的类似作用中被排除。此外,本文所用的措辞和术语是出于描述的目的而不应被视为限制。此处使用的“包括”,“包含”,“具有”,“含有”,“涉及”及其变体意在包括其后列出的项目及其等同物,以及其他项目。
已经因此描述了本发明的至少一个实施例的若干特征,应当理解的是,本领域技术人员容易做出各种改变、修改和改进。这样的改变、修改和改进旨在是本公开的一部分,并旨在处于本发明的范围之内。因此,前面的描述和附图仅是示例的方式,并且本发明的范围应该是由所附权利要求和它们的等价物的合理解释来确定。

Claims (12)

1.一种红外线(IR)焙烧炉,包括:
具有至少一个加热段和一个邻近的冷却段的炉外壳,所述炉外壳由绝热砖材料组成;
位于所述炉外壳的冷却段内的冷却系统,其中,所述冷却系统包括被集成到所述炉外壳中并且由与所述炉外壳相同的绝热砖材料制成的冷却歧管,所述冷却歧管包括空气充气室,所述空气充气室具有由相同绝热砖材料制成的上部和下部,所述上部和下部封围出一空腔;在空气充气室一侧中的至少一个开口将冷却空气引入所述空腔中,位于空气充气室下部中的多个喷射孔引导冷却空气以冲击到位于延伸穿过炉外壳的炉膛平面上的工件上;以及
对流冷却段,其定位成邻所述冷却段以接收工件,所述对流冷却段被配置成提供冷却空气至工件。
2.根据权利要求1所述的红外线焙烧炉,
其中,每个所述喷射孔的轴线基本上垂直于所述炉膛平面。
3.根据权利要求1所述的红外线焙烧炉,其中,所述多个喷射孔布置成横跨炉膛平面宽度的一部分。
4.根据权利要求1所述的红外线焙烧炉,其中,所述多个喷射孔是线性布置的。
5.根据权利要求1所述的红外线焙烧炉,其中,所述炉膛平面由穿过炉外壳纵向延伸的传送带来限定。
6.根据权利要求1所述的红外线焙烧炉,其中,所述对流冷却段包括:
传送带,所述工件布置在所述传送带上;和
梯状充气室,其设置在所述传送带上方并且配置成提供被向下引导至所述工件顶面的冷却空气。
7.根据权利要求6所述的红外线焙烧炉,其中,所述对流冷却段还包括:
下空气充气室,其设置在传送带下方并且配置成将冷却空气提供到传送带的底部部分,其中,来自所述梯状充气室的空气的速度大于来自所述下空气充气室的空气的速度。
8.一种红外线(IR)焙烧炉,包括:
具有至少一个加热段和一个邻近的冷却段的炉外壳;
位于所述炉外壳的冷却段内的冷却系统,其中,所述冷却系统被集成到所述炉外壳中并且由与所述炉外壳相同的材料制成;以及
对流冷却段,其定位成邻近所述冷却段以从所述冷却段接收工件,其中所述对流冷却段被配置成从所述工件的上方和下方提供冷却空气,所述对流冷却段包括:
传送带,所述工件布置在传送带上,所述传送带包括网状材料;
梯状充气室,其设置在所述传送带上方并且配置成提供被向下引导至所述工件顶面的冷却空气;以及
下空气充气室,其设置在传送带下方并且配置成将冷却空气提供到传送带的底部部分,
其中,来自所述梯状充气室的空气的速度大于来自所述下空气充气室的空气的速度,以使得所述工件不会从所述传送带被抬起。
9.一种红外线(IR)焙烧炉,包括:
具有至少一个加热段和一个邻近的冷却段的炉外壳;
位于所述炉外壳的冷却段内的冷却系统,其中,所述冷却系统被集成到所述炉外壳中并且由与所述炉外壳相同的材料制成;以及
对流冷却段,其定位成邻近所述冷却段以从所述冷却段接收工件,其中所述对流冷却段被配置成从所述工件的上方和下方提供冷却空气,所述冷却段包括:
传送带,所述工件布置在传送带上;以及
梯状充气室,其设置在所述传送带上方并且配置成提供被向下引导至所述工件顶面的冷却空气;其中所述梯状充气室包括多个充气横档,每个所述充气横档包括多个用于朝向工件的顶面引导冷却空气的横档喷口。
10.根据权利要求9所述的红外线焙烧炉,其中,每个所述横档喷口包括与相应充气横档的内部流体连接的多个孔。
11.根据权利要求9所述的红外线焙烧炉,其中,所述充气横档彼此分隔开,以便让回流的空气通过。
12.根据权利要求11所述的红外线焙烧炉,其中,相邻充气横档之间的间距大得足以防止可能导致所述工件在传送带上移动的空气涡流。
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