CN103760195A

CN103760195A - Manufacturing method of palladium-gold alloy hydrogen sensor core body

Info

Publication number: CN103760195A
Application number: CN201410050239.XA
Authority: CN
Inventors: 金鹏飞; 孙延玉; 赫伟东; 任先武; 祁欣; 文吉延; 刘洋; 苑文龙; 周明军; 张洪泉
Original assignee: CETC 49 Research Institute
Current assignee: CETC 49 Research Institute
Priority date: 2014-02-13
Filing date: 2014-02-13
Publication date: 2014-04-30

Abstract

The invention discloses a manufacturing method of a palladium-gold alloy hydrogen sensor core body, belongs to the field of sensor technology and manufacture, and aims to solve the problems of low stability and high cost of the existing sensor core bodies. Specifically the manufacturing method comprises the following steps: washing a silicon chip by an acetone solution, alcohol and an HF (hydrogen fluoride) solution in sequence, and performing spin-drying; forming a first silicon dioxide layer and a second silicon dioxide layer on the surface of the silicon chip by dry-process and wet-process mixed oxidation; forming a silicon nitride layer on the surfaces of the first and the second silicon dioxide layers by the chemical vapor deposition method; forming a palladium-magnesium alloy film on the surface of the silicon nitride layer by sputtering; forming a temperature measurement resistor and a heating resistor on the surface of the silicon nitride layer by sputtering; forming a back corrosion groove in the back surface by corrosion. The palladium-gold alloy hydrogen sensor chip is used in production and use of a hydrogen sensor.

Description

A kind of manufacture method of polarium hydrogen gas sensor core body

Technical field

The invention belongs to sensor technology and manufacture field, be specifically related to a kind of manufacture method of polarium hydrogen gas sensor core body.

Background technology

Hydrogen gas sensor core body is the core component of hydrogen gas sensor, is mainly used to detect density of hydrogen, in petrochemical complex production and field of scientific study, has vital role.Conventional hydrogen gas sensor core body has MOS type, catalytic combustion-type, galvanochemistry type and optical type, and these type sensor core bodys are because stability or high cost have limited use.

Summary of the invention

The present invention seeks in order to solve existing sensor core stability not highly, and the high problem of cost, provides a kind of manufacture method of polarium hydrogen gas sensor core body.

The manufacture method of a kind of polarium hydrogen gas sensor core body of the present invention, the detailed process of the method is:

Step 1, use acetone soln cleaning silicon chip;

Step 2, use alcohol cleaning silicon chip;

Step 3, use HF solution cleaning silicon chip, then dry silicon chip;

Step 4, the silicon chip after step 3 is dried utilize dry method wet-mixing oxidation, form the first silicon dioxide layer and the second silicon dioxide layer;

Step 5, utilize chemical vapor deposition step 4 form the first silicon dioxide layer surface form silicon nitride layer;

The surface that step 6, utilization sputter at the silicon nitride layer of step 5 formation forms chromium transition bed, then on chromium transition bed, utilizes sputter to form palladium magnesium alloy film;

The surface that step 7, utilization sputter at the silicon nitride layer of step 5 formation forms temperature detecting resistance and heating resistor;

Step 8, utilize corrosion to form back side etching tank overleaf.

Advantage of the present invention: the manufacture method of a kind of polarium hydrogen gas sensor core body of the present invention, the quick resistance of alloying hydrogen on silicon chip, utilizes hydrogen to be diffused into metal surface and inner and cause that resistance variations reaches the object that detects hydrogen.

The present invention utilizes semiconductor and micro fabrication to manufacture a kind of palladium-base alloy hydrogen gas sensor, in order to detect low-concentration hydrogen, adopt palladium magnesium as sensitive layer, there is good selectivity, palladium magnesium alloy layer thickness is 200-500nm, increase chromium transition bed, thickness is 40-50nm, improves sensor stability, increase heating resistor and temperature detecting resistance, the thermal adaptability that improves sensor, heating resistor resistance is 5 Ω-12 Ω, temperature detecting resistance is 20 Ω-50 Ω.

The present invention adopts the detectability of the palladium-base alloy hydrogen gas sensor core body that semiconductor technology and micro fabrication manufacture low, and can realize mass production, thereby has bright prospects.

Accompanying drawing explanation

Fig. 1 is the sectional view of polarium hydrogen gas sensor of the present invention;

Fig. 2 is the axonometric drawing of polarium hydrogen gas sensor of the present invention.

Embodiment

Embodiment one: below in conjunction with Fig. 1 and Fig. 2, present embodiment is described, a kind of manufacture method of polarium hydrogen gas sensor core body described in present embodiment, the detailed process of the method is:

Step 1, use acetone soln cleaning silicon chip 4;

Step 2, use alcohol cleaning silicon chip 4;

Step 3, use HF solution cleaning silicon chip 4, then dry silicon chip;

Step 4, the silicon chip 4 after step 3 is dried utilize dry method wet-mixing oxidation, form the first silicon dioxide layer 3 and the second silicon dioxide layer 5;

Step 5, utilize chemical vapor deposition step 4 form the first silicon dioxide layer 3 surface form silicon nitride layer 2;

The surface that step 6, utilization sputter at the silicon nitride layer 2 of step 5 formation forms chromium transition bed, then on chromium transition bed, utilizes sputter to form palladium magnesium alloy film 7;

The surface that step 7, utilization sputter at the silicon nitride layer 2 of step 5 formation forms temperature detecting resistance 1 and heating resistor 6;

Step 8, utilize corrosion to form back side etching tank 8 overleaf.

In present embodiment, silicon chip 4 is semiconductor layer, and silicon nitride layer 2 is as separation layer, palladium magnesium alloy film 7 is as sensitive structure, temperature detecting resistance 1 and heating resistor 6 are the platinum figures that form through sputter, photoetching and etching, when responsive to hydrogen, sensor are carried out to temperature compensation.

Embodiment two: present embodiment is described below in conjunction with Fig. 1, present embodiment is described further embodiment one, before utilizing the surface formation palladium magnesium alloy film 7 that sputters at silicon nitride layer 2 described in step 6, first utilize the surface that sputters at silicon nitride layer 2 to form chromium transition bed, the thickness of chromium transition bed is 40nm-50nm.

In present embodiment, it is in order to increase adherence that sputter forms chromium transition bed.

Embodiment three: below in conjunction with Fig. 1, present embodiment is described, present embodiment is described further embodiment one, described the first silicon dioxide layer 3 is identical with the thickness of the second silicon dioxide layer 5, all between 200nm-300nm.

Embodiment four: below in conjunction with Fig. 1, present embodiment is described, present embodiment is described further embodiment one, the thickness of described silicon nitride layer 2 is 200nm-400nm.

Embodiment five: below in conjunction with Fig. 1, present embodiment is described, present embodiment is described further embodiment one, the thickness of described palladium magnesium alloy film 7 is 200nm-500nm.

Embodiment six: below in conjunction with Fig. 1, present embodiment is described, present embodiment is described further embodiment one, the thickness of described palladium magnesium alloy film 7 is 500nm, the atomic ratio of palladium magnesium alloy is that 1:9 is between 3:7.

Embodiment seven: below in conjunction with Fig. 1, present embodiment is described, present embodiment is described further embodiment one, described temperature detecting resistance 1 is 20 Ω-50 Ω, heating resistor 6 is 5 Ω-12 Ω.

Claims

1. a manufacture method for polarium hydrogen gas sensor core body, is characterized in that, the detailed process of the method is:

Step 1, use acetone soln cleaning silicon chip (4);

Step 2, use alcohol cleaning silicon chip (4);

Step 3, use HF solution cleaning silicon chip (4), then dry silicon chip;

Step 4, the silicon chip (4) after step 3 is dried utilize dry method wet-mixing oxidation, form the first silicon dioxide layer (3) and the second silicon dioxide layer (5);

Step 5, utilize chemical vapor deposition step 4 form the first silicon dioxide layer (3) surface form silicon nitride layer (2);

The surface that step 6, utilization sputter at the silicon nitride layer (2) of step 5 formation forms chromium transition bed, then on chromium transition bed, utilizes sputter to form palladium magnesium alloy film (7);

The surface that step 7, utilization sputter at the silicon nitride layer (2) of step 5 formation forms temperature detecting resistance (1) and heating resistor (6);

Step 8, overleaf utilize corrosion form back side etching tank (8).

2. a kind of manufacture method of polarium hydrogen gas sensor core body according to claim 1, it is characterized in that, described in step 6, utilizing the surface that sputters at silicon nitride layer (2) to form palladium magnesium alloy film (7) before, first utilize the surface that sputters at silicon nitride layer (2) to form chromium transition bed, the thickness of chromium transition bed is 40nm-50nm.

3. a kind of manufacture method of polarium hydrogen gas sensor core body according to claim 1, is characterized in that, described the first silicon dioxide layer (3) is identical with the thickness of the second silicon dioxide layer (5), all between 200nm-300nm.

4. a kind of manufacture method of polarium hydrogen gas sensor core body according to claim 1, is characterized in that, the thickness of described silicon nitride layer (2) is 200nm-400nm.

5. a kind of manufacture method of polarium hydrogen gas sensor core body according to claim 1, is characterized in that, the thickness of described palladium magnesium alloy film (7) is 200nm-500nm.

6. a kind of manufacture method of polarium hydrogen gas sensor core body according to claim 1, is characterized in that, the thickness of described palladium magnesium alloy film (7) is 500nm, and the atomic ratio of palladium magnesium alloy is that 1:9 is between 3:7.

7. a kind of manufacture method of polarium hydrogen gas sensor core body according to claim 1, is characterized in that, described temperature detecting resistance (1) is 20 Ω-50 Ω, and heating resistor (6) is 5 Ω-12 Ω.