CN103746685A - High-efficiency microwave power amplifier pulse modulator - Google Patents
High-efficiency microwave power amplifier pulse modulator Download PDFInfo
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- CN103746685A CN103746685A CN201310673941.7A CN201310673941A CN103746685A CN 103746685 A CN103746685 A CN 103746685A CN 201310673941 A CN201310673941 A CN 201310673941A CN 103746685 A CN103746685 A CN 103746685A
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- side mosfet
- pressure side
- low
- mosfet driver
- driver
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Abstract
The invention discloses a high-efficiency microwave power amplifier pulse modulator comprising a high-voltage side MOSFET driver [HVIC], a low-voltage side MOSFET driver [LVIC], a high-voltage side MOSFET [Q1], a low-voltage side MOSFET [Q2], a diode [Dboot], a capacitor [Cboot], high-voltage side MOSFET driver [HVIC] and the low-voltage side MOSFET driver [LVIC] power supply ports VCC, input pulse signals TTL, and a high-voltage side MOSFET [HVIC] drain power-up signal VDD. The pulse modulator is capable of driving GaN power amplification working in a high voltage; pulse front edge and back edge are good; the back edge has no trailing; and the pulse modulator is high in efficiency and is especially suitable to be used in GaN pulse power amplifiers.
Description
Technical field
The present invention relates to pulse modulator, more specifically, relate to a kind of high efficiency microwave power amplifier pulse modulator.
Background technology
In microwave, millimetre-wave circuit, pulse modulator is widely used in microwave power amplifying circuit.From six the seventies to stage now, emerged in large numbers the lot of research about pulse modulator, and these achievements light be widely used in microwave engineering technical field.There is conditions of streaking in traditional microwave power amplifier pulse modulator pulse back edge, not obvious along hangover after when microwave power amplifier operating voltage is lower, not obvious to effectiveness affects, when microwave power amplifier operating voltage is higher (as GaN power amplifier), conditions of streaking is very obvious, greatly reduces microwave power amplifier operating efficiency.Thereby more high efficiency plane high power combiner in the industry cycle receives much concern.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, invent a kind of high efficiency microwave power amplifier pulse modulator.This pulse modulator not only efficiency is high, and circuit is simply with low cost, can be applicable in microwave power amplifier.
The present invention is realized by following technological means: a kind of novel efficient microwave power amplifier pulse modulator, comprise that high-pressure side mosfet driver, low-pressure side mosfet driver, high-pressure side MOSFET, low-pressure side MOSFET, diode, electric capacity, power supply port VCC, input pulse signal TTL, drain electrode add signal of telecommunication VDD
High-pressure side mosfet driver, the output of low-pressure side mosfet driver connects respectively the grid of high-pressure side MOSFET and low-pressure side MOSFET, input pulse signal TTL connects the input of high-pressure side mosfet driver and low-pressure side mosfet driver, power supply interface VCC connects the VCC end of high-pressure side mosfet driver and low-pressure side mosfet driver, drain electrode adds the drain electrode that signal of telecommunication VDD connects high-pressure side MOSFET, high-pressure side MOSFET source electrode is connected with low-pressure side MOSFET drain electrode, high-pressure side MOSFET source electrode is connected with load simultaneously, parallel diode and electric capacity between power supply interface VCC and high-pressure side MOSFET source electrode, at the VB of electric capacity two ends parallel high voltage side mosfet driver end and Vs end.
Mosfet driver HVIC output in high-pressure side is contrary with low-pressure side mosfet driver LVIC output phase.
The present invention has following beneficial effect: herein compared with prior art, this modulator can drive the GaN power amplifier of high voltage operation, and before and after pulse, along better, rear along nothing hangover, efficiency is high, and particularly suitable is in GaN pulse power amplifier.
Accompanying drawing explanation
Fig. 1 is high efficiency microwave power amplifier pulse modulator schematic diagram of the present invention.
Fig. 2 is high efficiency microwave power amplifier pulse modulator test result schematic diagram of the present invention.
Embodiment
The present embodiment is high efficiency microwave power amplifier pulse modulator.Its structure as shown in Figure 1, a novel efficient microwave power amplifier pulse modulator, comprises that high-pressure side mosfet driver, low-pressure side mosfet driver, high-pressure side MOSFET, low-pressure side MOSFET, diode, electric capacity, power supply port VCC, input pulse signal TTL, drain electrode add signal of telecommunication VDD;
High-pressure side mosfet driver, the output of low-pressure side mosfet driver connects respectively the grid of high-pressure side MOSFET and low-pressure side MOSFET, input pulse signal TTL connects the input of high-pressure side mosfet driver and low-pressure side mosfet driver, power supply interface VCC connects the VCC end of high-pressure side mosfet driver and low-pressure side mosfet driver, drain electrode adds the drain electrode that signal of telecommunication VDD connects high-pressure side MOSFET, high-pressure side MOSFET source electrode is connected with low-pressure side MOSFET drain electrode, high-pressure side MOSFET source electrode is connected with load simultaneously, parallel diode and electric capacity between power supply interface VCC and high-pressure side MOSFET source electrode, at the VB of electric capacity two ends parallel high voltage side mosfet driver end and Vs end.And mosfet driver HVIC output in high-pressure side is contrary with low-pressure side mosfet driver LVIC output phase.
Described in the present embodiment, high efficiency microwave power amplifier pulse modulator test result as shown in Figure 2.Because the main feature of the present embodiment is that pulse back edge is good, so Fig. 2 only provides the oscilloscope photo on edge after impulse waveform.As can be seen from Figure 2: pulse back edge is 41ns.
Claims (2)
1. a novel efficient microwave power amplifier pulse modulator, is characterized in that: comprise that high-pressure side mosfet driver, low-pressure side mosfet driver, high-pressure side MOSFET, low-pressure side MOSFET, diode, electric capacity, power supply port VCC, input pulse signal TTL, drain electrode add signal of telecommunication VDD;
High-pressure side mosfet driver, the output of low-pressure side mosfet driver connects respectively the grid of high-pressure side MOSFET and low-pressure side MOSFET, input pulse signal TTL connects the input of high-pressure side mosfet driver and low-pressure side mosfet driver, power supply interface VCC connects the VCC end of high-pressure side mosfet driver and low-pressure side mosfet driver, drain electrode adds the drain electrode that signal of telecommunication VDD connects high-pressure side MOSFET, high-pressure side MOSFET source electrode is connected with low-pressure side MOSFET drain electrode, high-pressure side MOSFET source electrode is connected with load simultaneously, parallel diode and electric capacity between power supply interface VCC and high-pressure side MOSFET source electrode, at the VB of electric capacity two ends parallel high voltage side mosfet driver end and Vs end.
2. a kind of high efficiency microwave power amplifier pulse modulator according to claim 1, is characterized in that, mosfet driver HVIC output in high-pressure side is contrary with low-pressure side mosfet driver LVIC output phase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310673941.7A CN103746685A (en) | 2013-12-11 | 2013-12-11 | High-efficiency microwave power amplifier pulse modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310673941.7A CN103746685A (en) | 2013-12-11 | 2013-12-11 | High-efficiency microwave power amplifier pulse modulator |
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| Publication Number | Publication Date |
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| CN103746685A true CN103746685A (en) | 2014-04-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310673941.7A Pending CN103746685A (en) | 2013-12-11 | 2013-12-11 | High-efficiency microwave power amplifier pulse modulator |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953991A (en) * | 2015-06-23 | 2015-09-30 | 东南大学 | IGBT (insulated gate bipolar transistor) drive circuit provided with level bootstrap and charge pump circuits and adopting double N-MOSFET (N-channel metal oxide semiconductor field effect transistor) drive stages as well as sequential control method |
| CN110474620A (en) * | 2019-07-29 | 2019-11-19 | 中国电子科技集团公司第五十五研究所 | A kind of novel pulse-modulator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6211706B1 (en) * | 1995-05-04 | 2001-04-03 | International Rectifier Corp. | Method and circuit for driving power transistors in a half bridge configuration allowing for excessive negative swing of the output node and integrated circuit incorporating the circuit |
| WO2001087020A1 (en) * | 2000-04-27 | 2001-11-15 | Lumion Corporation | Universal ballast control circuit |
| CN101216528A (en) * | 2008-01-15 | 2008-07-09 | 中国科学院上海微系统与信息技术研究所 | On-chip test method for microwave power amplifier chip and its test system |
-
2013
- 2013-12-11 CN CN201310673941.7A patent/CN103746685A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6211706B1 (en) * | 1995-05-04 | 2001-04-03 | International Rectifier Corp. | Method and circuit for driving power transistors in a half bridge configuration allowing for excessive negative swing of the output node and integrated circuit incorporating the circuit |
| WO2001087020A1 (en) * | 2000-04-27 | 2001-11-15 | Lumion Corporation | Universal ballast control circuit |
| CN101216528A (en) * | 2008-01-15 | 2008-07-09 | 中国科学院上海微系统与信息技术研究所 | On-chip test method for microwave power amplifier chip and its test system |
Non-Patent Citations (1)
| Title |
|---|
| MAXIM: "《125V/3A, High-Speed, Half-Bridge MOSFET Drivers》", 31 December 2008 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953991A (en) * | 2015-06-23 | 2015-09-30 | 东南大学 | IGBT (insulated gate bipolar transistor) drive circuit provided with level bootstrap and charge pump circuits and adopting double N-MOSFET (N-channel metal oxide semiconductor field effect transistor) drive stages as well as sequential control method |
| CN110474620A (en) * | 2019-07-29 | 2019-11-19 | 中国电子科技集团公司第五十五研究所 | A kind of novel pulse-modulator |
| CN110474620B (en) * | 2019-07-29 | 2022-08-09 | 中国电子科技集团公司第五十五研究所 | Novel pulse modulator |
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Application publication date: 20140423 |
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| RJ01 | Rejection of invention patent application after publication |