CN103746079A - Single-layer-structure inverted top-emission OLED (Organic Light Emitting Device) - Google Patents
Single-layer-structure inverted top-emission OLED (Organic Light Emitting Device) Download PDFInfo
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- CN103746079A CN103746079A CN201410035606.9A CN201410035606A CN103746079A CN 103746079 A CN103746079 A CN 103746079A CN 201410035606 A CN201410035606 A CN 201410035606A CN 103746079 A CN103746079 A CN 103746079A
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
- H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
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- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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Abstract
The invention discloses a single-layer-structure inverted top-emission OLED (Organic Light Emitting Device), and belongs to the technical field of organic optoelectronic devices. The inverted top-emission OLED with the structure disclosed by the invention comprises a substrate, a cathode, a single-layer organic function layer and a transparent anode in sequence. The single-layer organic function layer is formed by doping two organic dyes into a single matrix material in a dopant mode, wherein the matrix material adopts an organic material with higher electron mobility, and the two organic dyes performs respective functions, namely, one organic dye is used for capturing holes, and the other organic dye is used for emitting light. According to the device with the structure disclosed by the invention, an exciton compound area is enlarged, the balance of electrons and holes in the single-layer organic function layer is favorably realized, and the device has the advantages of high efficiency, low efficiency roll-off, stability of light-emitting optical spectrum, and the like.
Description
Technical field
The invention belongs to organic optoelectronic device technical field, be specifically related to a kind of inversion top radiation organic EL part of single layer structure.
Background technology
Organic electroluminescence device (OLED) has lot of advantages, such as solid luminescent, energy consumption are little, wide, the fast response time of active illuminating, visual angle, be easy to realize flexiblely show, cost is low etc., in fields such as colour demonstration, solid-state illuminations, there is huge using value, a lot of research institutions have all dropped into a large amount of manpower and materials in the world, have promoted the fast development of OLED technology.
OLED can be divided into end transmitting OLED and top transmitting OLED by the taking-up mode of light.The contradiction that end transmitting OLED exists the drive circuit of demonstration light-emitting area and pixel to vie each other, if but adopt top transmitting OLED, because the taking-up end of light is top, just can obtain higher aperture opening ratio, be conducive to realize high display brightness, high-resolution organic light emitting display.In addition,, for the active organic light emitting display of using n channel TFT, it is the inverted structure of negative electrode that OLED need take hearth electrode.Therefore, if want to utilize low cost, the high aperture of OLED and be easy to realize the advantage of large-area displays, to being inverted that top transmitting OLED conducts a research, be very necessary.
Based on being inverted the potential application prospect of top transmitting OLED, a lot of scientific research institutions have carried out the work of this respect in succession in the world.1997, the S.R.Forrest seminar of Princeton university [Appl.Phys.Lett.70, (1997) 2954.] reported and has adopted the inversion top transmitting OLED that magnesium, silver alloy are negative electrode, but the poor-performing of this device, external quantum efficiency is less than 1%.2003, it was end negative electrode that the people such as W.Kowalsky [Appl.Phys.Lett.82, (2003) 284.] of Germany adopt Au (100nm)/Mg (100nm), has prepared based on Alq
3luminous inversion top transmitting green light OLED, the efficiency of device reaches 3.9cd/A.2002, the inversion top transmitting OLED based on p-i-n structure prepared in the K.Leo seminar of Dresden, Germany university [Appl.Phys.Lett.81, (2002) 922.], and the brightness of green device under 4V can reach 100cd/m
2.2011, they have reported again [Appl.Phys.Lett.98, (2011) 083304.] adopt the inversion top transmitting OLED of high efficiency gold-tinted phosphor material, by to whole device annealing in process, charge carrier in luminous zone reaches balance, the brightness that the external quantum efficiency of device reaches under 15%, 2.9V reaches 1000cd/m
2.
But because preparation order is different with traditional positive interposed structure OLED, cause injection, the transmission of electronics in being inverted OLED more difficult with respect to hole, electronics, the unbalanced phenomenon in hole are more serious, this be also why be inverted OLED performance with respect to just putting the poor reason of OLED.At present, the research of launching OLED about being inverted top of report concentrates on injection and the transmission that how to improve electronics mostly in the world, such as designing new negative electrode and cathodic modification layer, adopting the aspects such as p-i-n structure.The organic function layer of considering single layer structure OLED generally can only transmit a certain charge carrier, the individual layer organic material that electron mobility is higher if therefore introduce in being inverted top transmitting OLED is as fertile material, not only can simplify the preparation process of device, and pass through device structure design, introduce a kind of trapped hole organic blended dose, just can solve and be inverted the unbalanced problem of electronics and hole in top transmitting OLED, but the inversion of this structure top transmitting OLED device have not been reported in the world.
Summary of the invention
The present invention is directed to impact and be inverted the key factor of top transmitting OLED performance, a kind of inversion top transmitting OLED device of single layer structure is provided.
Be different from traditional multilayer organic function layer being comprised of hole transmission layer, luminescent layer, electron transfer layer, the organic function layer of the inversion top transmitting OLED of structure of the present invention between negative electrode, anode is single layer structure.This device is comprised of substrate, negative electrode, individual layer organic function layer, transparent anode successively:
Substrate; Backing material can be the flexible substrate such as the rigid substrate such as glass, silicon, or PETG, polymethyl methacrylate.
Negative electrode; Negative electrode is the composite cathode that molybdenum/low workfunction metal layer forms.The thickness of molybdenum layer is 10～200nm, and the metal of low work function can be the metals such as Al, Ca, Ba, Sm, or is other cathode material, and thickness is 1～100nm.Also can in the middle of organic function layer and composite cathode, insert Al
2o
3, CsF, CaF
2, MgF
2, NaF, LiF, Cs
2cO
3on cathodic modification layer, improve the injection of electronics, the thickness of cathodic modification layer is 0.5～5nm, can prepare by techniques such as thermal evaporation, sputters.
Anode; Anode can be transparent metal oxide, as tin indium oxide (ITO), aluminum zinc oxide (AZO) etc., or is the metal of the high work functions such as Ag, Au, Cu, also can use any anode material, and described anode thickness is 15～100nm.Also the injection that can insert anode modification layer raising hole between anode and organic function layer, anode modification layer can adopt 2,3,5,6-tetrafluoro-7,7 ', 8,8 '-four cyano quinoline diformazan (tetrafluorotetracyanoquinodimethane, F4-TCNQ), FeCl
3, or adopt MoO
3, WO
3, V
2o
5deng oxide, can use any anode modification layer and be not limited to this, the thickness of anode modification layer is generally 1～10nm.
The thickness of the individual layer organic function layer between negative electrode and positive electrode is 50～150nm, by organic dyestuff 1, organic dyestuff 2 forms in single fertile material with the form co-doped of dopant, wherein fertile material adopts the higher organic material of electron mobility, such as 1, 3, 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (1, 3, 5-Tris (1-phenyl-1H-benzimidazol-2-yl)-benzene, TPBi), 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline (2, 9-Dimethyl-4, 7-diphenyl-1, 10-phenanhroline, BCP), 4, 7-diphenyl-1, 10-phenanthroline (4, 7-diphenyl-1, 10-Phenanthroline, Bphen), three (oxine) aluminium (Aluminum Tris (8-Hydroxyquinolinate), Alq
3) etc., and be not limited to this. Organic dyestuff 1,2 can adopt organic fluorescence luminescent material or organic phosphorescent light-emitting materials, such as two (4,6-difluorophenyl pyridine-C2, N) pyridine formyl closes iridium (Bis[2-(4,6-difluorophenyl) pyridinato-C2, N] (picolinato) iridium (III), FIrPic), three (2-phenylpyridine-C2, N) close iridium (III) (Tris (2-phenylpyridinato-C2, N) iridium (III), Ir (ppy)
3), acetopyruvic acid two (1-phenyl isoquinolin quinoline-C2, N) closes iridium (III), and (Bis (1-phenyl-isoquinoline-C2, N) is iridium (III) (acetylacetonato), Ir (piq)
2(acac)), acetopyruvic acid two (2-phenyl benzothiazole-C2, N) closes iridium (III) (Bis (2-phenyl-benzothiazole-C2, N) is iridium (III) (acetylacetonate), Ir (bt)
2(acac)), two (4-phenyl thienos [3,2-c] pyridine-N, C2 ') second phthalein acetone close iridium (iridium (III) bis (and 4-phenylthieno[3,2-c] pyridinato-N, C20) acetylacetonate, PO-01), three (1-phenyl-isoquinolin-C2, N) close iridium (III) (Tris (1-phenylisoquinolinato-C2, N) iridium (III), Ir (piq)
3), three [2-(p-methylphenyl) pyridine-C2, N) close iridium (III) (Tris[2-(p-tolyl) pyridine-C2, N)] iridium (III), Ir (mppy)
3) etc., can use any high performance organic dyestuff and be not limited to this.The doping content scope of organic dyestuff is 0.1wt%～40wt%, is beneficial to the transmission of charge carrier and the energy of exciton and shifts.
The device of structure of the present invention, the Main Function of organic dyestuff 1 is in order to realize the electronics in individual layer organic function layer, the balance in hole, the main utilization from fertile material, organic dyestuff 1 of organic dyestuff 2 shifted the exciton recombination luminescence of coming.Organic dyestuff of the present invention need meet the following conditions: first, the HOMO energy level of organic dyestuff 1 need be between the work function of anode and the HOMO energy level of fertile material, can direct capture from anode injected holes.Secondly, the photoluminescence spectra of organic dyestuff 1 has good coincidence with the absorption spectrum of organic dyestuff 2.The specific works principle of the device of structure of the present invention is as follows: electronics transmits by fertile material, organic dyestuff 1 can direct capture hole, then the form transmission to jump on organic dyestuff 1, exciton mainly forms on fertile material and organic dyestuff 1, and the exciton after formation is transferred to recombination luminescence on organic dyestuff 2 by energy.
The invention has the beneficial effects as follows: adopt a kind of new composite cathode, be combined with the fertile material of the individual layer organic function layer that electron mobility is larger, be conducive to injection and the transmission of electronics.The HOMO energy level of organic dyestuff 1 and the work function of anode match, can trapped hole, be easy to realize the electronics of being inverted in top transmitting OLED, the balance of hole number, and be conducive to obtain high efficiency luminous.In addition, owing to having expanded the recombination region of exciton, device of the present invention has low efficiency roll-off, can guarantee still to keep higher efficiency under high brightness.
Accompanying drawing explanation
Fig. 1: the structural representation of the inversion top radiation organic EL part based on single layer structure of the present invention.
Wherein 1 is substrate, and 2 is negative electrode, and 3 is that individual layer organic function layer, 4 is transparent anode.
Current efficiency-current density curve of Fig. 2: embodiment 1 fabricate devices.
Brightness-current density curve of Fig. 3: embodiment 2 fabricate devices.
Current efficiency-the brightness curve of Fig. 4: embodiment 2 fabricate devices.
Embodiment
In example, the implication of relevant abbreviation title is as follows:
Mo/Al: molybdenum/aluminium; As negative electrode.
Mo/Mg:Ag: molybdenum/magnesium; Silver, the volume ratio of the doping of Mg:Ag is 10:1, as negative electrode.
Cs
2cO
3: cesium carbonate; As cathodic modification layer;
TPBi:1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene; As fertile material or the electron transport material of individual layer organic function layer, electron transport ability is strong;
FIrPic: two (4,6-difluorophenyl pyridine-C2, N) pyridine formyl closes iridium; As organic dyestuff 1;
Ir (ppy)
3: three (2-phenylpyridine-C2, N) close iridium; As organic dyestuff 1;
PO-01: two (4-phenyl thieno [3,2-c] pyridine-N, C2 ') second phthalein acetone closes iridium; As organic dyestuff 2;
TAPC:4,4'-cyclohexyl two [N, N-bis-(4-aminomethyl phenyl) aniline]; As hole transmission layer;
MoO
3: molybdenum oxide; As anode modification layer;
Ag: silver; As transparent anode.
Embodiment 1:
The structure of the inversion top radiation organic EL part of preparation is:
Device A: silicon substrate/Mo (50nm)/Al (5nm)/Cs
2cO
3(1nm)/TPBi:10wt%FIrPic:6wt%PO-01 (100nm)/MoO
3(10nm)/Ag (20nm)
Device B: silicon substrate/Mo (50nm)/Al (5nm)/Cs
2cO
3(1nm)/TPBi:6wt%PO-01 (100nm)/MoO
3(10nm)/Ag (20nm)
Wherein device A is the structure that adopts the present invention's design, and device B is only doped with the comparative device of organic dye 1.
The preparation of device can be undertaken by multi-source organic metal molecular vapor deposition system, and detailed process is as follows:
[1] backing material in experiment is selected the silicon substrate of surface coverage silicon dioxide insulating layer, first acetone, ethanol cotton balls for silicon substrate is cleaned repeatedly;
[2] silicon substrate of scrub is put into clean beaker and used successively acetone, ethanol, deionized water ultrasonic 10 minutes, then be placed in baking oven and dry;
[3] silicon substrate of handling well is placed in to multi-source organic metal molecular vapor deposition system (referring to Chinese patent: ZL03110977.2, " for the increasing cooking-pot type evaporation source of organic electroluminescent coating machine "), in the vacuum cavity of vapo(u)rization system, comprise organic evaporating area (8 evaporation sources) and evaporation of metal district (3 evaporation sources), between twoth district and between each evaporation source, mutually completely cut off, avoided mutual pollution.Every two evaporation sources share a set of temperature control system, can carry out the evaporation of 2 kinds of metal materials or 4 kinds of organic materials, for guaranteeing evaporation uniformity, substrate distance evaporation source 25cm simultaneously, simultaneously can rotation or revolution to guarantee the uniformity of thin evaporated film, the vacuum degree of system can reach 10
-5pa, in the process of film growth, the vacuum degree of system maintains 3 * 10
-4pa left and right.The thickness of Material growth and growth rate are controlled by American I L-400 type film-thickness monitoring.The test macro synchro measure that the electroluminescent spectrum of device, brightness and current-voltage characteristic are comprised of spectrometer PR655, galvanometer Keithley-2400 and computer.All tests are all to complete in atmosphere at room temperature.
Current efficiency-the current density of inversion of the present invention top ballistic device as shown in Figure 2.As can be seen from the figure, the device A of the present invention's design compares and has higher efficiency with comparative device B.The maximum difference of device A and B is only in device A, introduces the FIrPic of 10wt%.The maximum current efficiency of device A can reach 32.4cd/A, and the maximum current efficiency of device B is only 20.3cd/A.At 1000cd/m
2brightness under, the current efficiency of device A is 31.8cd/A, and device B is only 20.2cd/A.
Embodiment 2:
The structure of the inversion top radiation organic EL part C of preparation is: silicon substrate/Mo (50nm)/Mg:Ag (5nm)/Cs
2cO
3(1nm)/TPBi:10wt%Ir (ppy)
3: 6wt%PO-01 (100nm)/MoO
3(10nm)/Ag (20nm).Wherein the volume ratio of Mg:Ag doping is 10:1, and detailed process prepared by device is as embodiment 1.
Brightness-the current density of inversion of the present invention top ballistic device as shown in Figure 3.As can be seen from the figure, the high-high brightness of the device C of the present invention's design can reach 57384cd/m
2.The maximum current efficiency of device C can reach 30.1cd/A.As shown in Figure 4, device C is at 1000cd/m for current efficiency-brightness curve of device C
2brightness under current efficiency be 26.3cd/A.
Although describe the present invention in conjunction with example, the present invention is not limited to above-mentioned example and accompanying drawing, for the researcher of the art, can also modify to the present invention, and these improvement also belong in the protection range of the claims in the present invention.
Claims (8)
1. an inversion top radiation organic EL part for single layer structure, is characterized in that: substrate, negative electrode, individual layer organic function layer, transparent anode, consist of successively; By organic dyestuff 1 and organic dyestuff 2, the form co-doped with dopant forms individual layer organic function layer in single fertile material; The HOMO energy level of organic dyestuff 1 is between the work function of anode material and the HOMO energy level of fertile material, and the photoluminescence spectra of organic dyestuff 1 has good coincidence with the absorption spectrum of organic dyestuff 2.
2. the inversion top radiation organic EL part of a kind of single layer structure as claimed in claim 1, is characterized in that: the thickness of individual layer organic function layer is 50～150nm.
3. the inversion top radiation organic EL part of a kind of single layer structure as claimed in claim 1, it is characterized in that: fertile material is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline or three (oxine) aluminium.
4. the inversion top radiation organic EL part of a kind of single layer structure as claimed in claim 1, it is characterized in that: organic dyestuff 1 and organic dyestuff 2 are two (4,6-difluorophenyl pyridine-C2, N) pyridine formyl closes iridium, three (2-phenylpyridine-C2, N) close iridium, acetopyruvic acid two (1-phenyl isoquinolin quinoline-C2, N) close iridium (III), acetopyruvic acid two (2-phenyl benzothiazole-C2, N) close iridium (III), two (4-phenyl thieno [3,2-c] pyridine-N, C2 ') second phthalein acetone closes iridium or three (1-phenyl-isoquinolin-C2, N) and closes iridium.
5. the inversion top radiation organic EL part of a kind of single layer structure as claimed in claim 1, is characterized in that: the scope of the doping content of organic dyestuff 1 and organic dyestuff 2 is 0.1wt%～40wt%.
6. the inversion top radiation organic EL part of a kind of single layer structure as claimed in claim 1, is characterized in that: substrate is glass, silicon, PETG or polymethyl methacrylate.
7. a kind of laminated organic electroluminescent device based on individual layer organic light-emitting units as claimed in claim 1, is characterized in that: negative electrode is the composite cathode that molybdenum/low workfunction metal layer forms, and low workfunction metal is Al, Ca, Ba or Sm; The thickness of molybdenum layer is 10～200nm, and the thickness of low workfunction metal layer is 1～100nm.
8. the inversion top radiation organic EL part of a kind of single layer structure as claimed in claim 1, is characterized in that: anode is ITO, AZO, Ag, Au or Cu, and thickness is 15～100nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269496A (en) * | 2014-10-29 | 2015-01-07 | 中国科学院长春应用化学研究所 | White organic light-emitting device and preparation method thereof |
| CN104269500A (en) * | 2014-10-29 | 2015-01-07 | 中国科学院长春应用化学研究所 | Red organic electroluminescent device and preparation method thereof |
| CN104282840A (en) * | 2014-10-29 | 2015-01-14 | 中国科学院长春应用化学研究所 | Yellow organic light-emitting device and manufacturing method thereof |
| CN108346752A (en) * | 2018-01-18 | 2018-07-31 | 南方科技大学 | Preparation method and application of quantum dot light-emitting diode |
| US11139457B2 (en) | 2015-11-25 | 2021-10-05 | Boe Technology Group Co., Ltd. | OLED, method for fabricating the same, display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020125818A1 (en) * | 2000-10-04 | 2002-09-12 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
| CN102239580A (en) * | 2008-10-07 | 2011-11-09 | 欧司朗光电半导体有限公司 | Radiation emitting device |
| WO2013129183A1 (en) * | 2012-02-29 | 2013-09-06 | コニカミノルタ株式会社 | Organic electroluminescent element |
-
2014
- 2014-01-24 CN CN201410035606.9A patent/CN103746079B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020125818A1 (en) * | 2000-10-04 | 2002-09-12 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
| CN102239580A (en) * | 2008-10-07 | 2011-11-09 | 欧司朗光电半导体有限公司 | Radiation emitting device |
| WO2013129183A1 (en) * | 2012-02-29 | 2013-09-06 | コニカミノルタ株式会社 | Organic electroluminescent element |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269496A (en) * | 2014-10-29 | 2015-01-07 | 中国科学院长春应用化学研究所 | White organic light-emitting device and preparation method thereof |
| CN104269500A (en) * | 2014-10-29 | 2015-01-07 | 中国科学院长春应用化学研究所 | Red organic electroluminescent device and preparation method thereof |
| CN104282840A (en) * | 2014-10-29 | 2015-01-14 | 中国科学院长春应用化学研究所 | Yellow organic light-emitting device and manufacturing method thereof |
| CN104269500B (en) * | 2014-10-29 | 2017-04-12 | 中国科学院长春应用化学研究所 | Red organic electroluminescent device and preparation method thereof |
| CN104269496B (en) * | 2014-10-29 | 2017-04-19 | 中国科学院长春应用化学研究所 | White organic light-emitting device and preparation method thereof |
| US11139457B2 (en) | 2015-11-25 | 2021-10-05 | Boe Technology Group Co., Ltd. | OLED, method for fabricating the same, display device |
| CN108346752A (en) * | 2018-01-18 | 2018-07-31 | 南方科技大学 | Preparation method and application of quantum dot light-emitting diode |
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