CN110265560A - A kind of Nan dian Yao and its manufacturing process of double emitting layers structure - Google Patents
A kind of Nan dian Yao and its manufacturing process of double emitting layers structure Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H—ELECTRICITY
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Abstract
The Nan dian Yao device and its manufacturing process of a kind of double emitting layers structure is claimed in the present invention, and the device includes anode substrate, hole injection layer, hole transmission layer, the first luminescent layer, the second luminescent layer, electron transfer layer, electron injecting layer and cathode.Wherein, the first and second luminescent layers use same body material, identical guest materials and identical thickness, and the first luminescent layer object doping concentration is not higher than the 50% of the second luminescent layer object doping concentration.The double emitting layers structure of technical solution of the present invention is not only simple in structure, and can increase exciton utilization rate and recombination region, is effectively improved the efficiency roll-off of device.
Description
Technical field
The invention belongs to LED field more particularly to the Nan dian Yao technologies of double emitting layers structure.
Background technique
Organic Light Emitting Diode (Organic Light-Emitting Diodes, OLEDs), because it is showing and is illuminating
The huge applications market in field and by extensive concern.Compared with other display technologies, oled panel has many advantages, such as material
Range of choice is wide, 380nm-700nm SPECTRAL REGION can be achieved full-color display, visual angle be wide, fast response time, driving voltage are low,
The advantages that Flexible Displays can be achieved, was rapidly developed and applied in more than 20 years of past.OLED is using organic small point
Sub- semiconductor material completes the transmission of carrier as functional material under outer electric field driven, compound, forms exciton, exciton spoke
Transition realization is penetrated to shine.Therefore OLED be a kind of current driving apparatus, under external bias with the increase brightness of current density with
And increase.
In OLED, in order to improve the efficiency of device as far as possible, reaches using standard, there is the higher phosphorus of quantum efficiency
Luminescent material is widely used.But since there are triplet state-triplet state, polaron-triplet states to fall into oblivion under exciton concentration for phosphor material
It goes out, causes to increase with current density, device efficiency sharp-decay, showing for a kind of referred to as efficiency roll-off (roll-off) occur
As.Especially for blue-light device, there is this kind of material transmitting blue light to need biggish forbidden bandwidth and higher triplet energy state,
Material itself unstable and each functional layer material energy level that shines seriously mismatches, and causes this phenomenon even more serious.Because
OLED is shown in lighting engineering, is realized entirely whether by red, green and blue three primary colors, or using orange light and blue light complementary colours
Colour display screen shows that blue light ingredient is all essential.Therefore, the lagging in development of blue-light device seriously constrains OLED and is showing and illuminating neck
The application in domain.
It in recent years, is always current research hotspot since the service life of blue-light device, brightness and luminous efficiency are poor.
For traditional single-shot photosphere device, high concentration Exciton quenching is drawn in the use of wide bandgap material, such as triplet state-triplet state and three lines
Heat shock and polaron that the effects such as state-polaron generate, exacerbate the decaying of efficiency.In order to break through this bottle of problem, Japan
Chevron university Kido et al. has used laminated construction, and laminated construction is connected by two or more tradition OLED through charge generation layer
Come.This kind of structure is proved that device efficiency can be apt in a manner of reducing device operation current and roll-offs.In OLED, due to having
Huge difference and Al between the refractive index (1.52) of the refractive index of machine material and glass substrate, the refractive index (1.0) of air
Cathode is to photonic absorption, so that most of photon is in device inside with substrate mode, waveguide mode, surface plasma isotype
It dissipates, causes script internal quantum efficiency to reach device exterior close to 100% radiation and only 20% or so be utilized.When use lamination
When structure, not only complicated device architecture is more serious to the absorption and dissipation of photon, but also laminated construction keeps preparation process complicated,
The manufacturing cost and difficulty of device are improved, this also seriously limits the development and industrial application of OLED.Therefore, exploring has knot
Structure is simple, lower-cost method solves the problems, such as that device efficiency roll-off is particularly important.
The present invention is directed to the efficiency roll-off problem of device, and invention devises a kind of simple double emitting layers structure blue light of structure
OLED device, on the basis of traditional OLED structure, the luminescent layer by increasing different object concentration generates concentration gradient, widens
Exciton recombination region is improved exciton utilization rate and is changed in the case where avoiding that manufacturing cost and technology difficulty is significantly increased as far as possible
The efficiency roll-off problem of kind blue-light device.This is to the efficiency for improving entire device and its industrial application is promoted to be of great significance.
Summary of the invention
Present invention seek to address that the above problem of the prior art.Propose a kind of efficiency roll-off for being effectively improved blue-light device
The Nan dian Yao and its manufacturing process of the double emitting layers structure of problem.Technical scheme is as follows:
A kind of Nan dian Yao of double emitting layers structure, including the glass substrate with a thickness of 1100nm, which is characterized in that described
Have ito anode (1) on substrate, is provided with hole injection layer (2) on the ito anode (1), on the hole injection layer (2)
It is provided with hole transmission layer (3), is provided with the first blue light-emitting (4) on the hole transmission layer (3), the first blue light hair
It is provided on photosphere (4) the second blue light-emitting (5), is provided with electron transfer layer (6) on second blue light-emitting (5),
It is provided with electron injecting layer (7) on the electron transfer layer (6), is provided with cathode (8), cathode on the electron injecting layer (7)
(8) opaque, there is mirror-reflection effect, ito anode (1) injects for hole and is greater than in visible-range internal transmission factor
87%, hole injection layer (2) is used to improve the hole injection efficiency between anode (1) and hole transmission layer (3), hole transport
Layer (3) from anode injected holes for that will be transferred to luminescent layer, the first blue light-emitting (4) and the second blue light-emitting (5)
For capturing hole and electronically forming exciton, exciton radiation transistion, which is realized, to shine, and electron transfer layer (6) from cathode for that will inject
Electron-transport to luminescent layer, electron injecting layer (7) is used to improve the energy barrier between cathode (1) and electron transfer layer (3), raising
Electron injection efficiency, cathode (8) is opaque, for injecting electronics and reflection luminescent layer photon.It is same to cross increase luminescent layer and difference
Guest material concentration gradient, it is different using capture ability of the guest materials various concentration to carrier, make the first blue light-emitting
(4) while luminous, have the function of buffering, same second blue light to the extra hole for reaching the second blue light-emitting (5)
Luminescent layer (5) also has while shining and has buffer function to the excess electron for reaching the first blue light-emitting (4), double
Under luminescent layer interaction, each self energy mutually utilizes superfluous electronics or hole, can not only improve and improve exciton utilization rate, and
Light emitting region can be widened, the efficiency roll-off of device is substantially reduced.
Further, material of main part used by sending out the first blue light-emitting (4) described and the second blue light light luminescent layer (5)
It is identical, object dopant material is identical, light emitting layer thickness w is identical, first blue light-emitting (4) and the second blue light light luminescent layer
(5) material of main part is cavity type transmission material 4,4', 4 "-three (carbazole -9- base) triphenylamine (TCTA), object dopant material
It is that two (4,6- difluorophenyl pyridinato-C2, N) pyridinecarboxylics close iridium (Firpic).
Further, the object doping concentration y of first blue light-emitting (4) is not higher than the second blue light light luminescent layer
(5) the 50% of object doped parameterx, and each light emitting layer thickness w is between 5-30nm, i.e. y≤0.5x, 5≤w≤30.
Further, the structure of the Nan dian Yao are as follows: Glass (1100nm)/ITO (140nm)/MoO3(3nm)/TAPC
(60nm)/TCTA:Firpic (10%, 10nm)/TCTA:Firpic (20%, 10nm)/TmPyPB (20nm)/LiF (0.6nm)/
Al(120nm)。
A kind of manufacturing process of the Nan dian Yao based on the double emitting layers structure comprising following manufacturing process:
Step 1, to ito glass substrate pre-treatment；
The preparation of step 2, hole injection layer: the ito glass substrate after the completion of processing is placed in ultrahigh vacuum vacuum evaporation
The intracavitary preparation for carrying out each functional layer, MoO3Evaporation rate control is per second at 0.3 angstrom, and the duration is about 100 seconds；
The preparation of step 3, hole transmission layer and electronic barrier layer: being heated to evaporating temperature for hole-injecting material TAPC,
The control of its evaporation rate is per second at 1 angstrom, and evaporation time is about 600 seconds；
The preparation of step 4, double emitting layers: Subjective and Objective material is needed to steam altogether when vapor deposition luminescent layer, the first blue light-emitting and the
And blue light-emitting object doping concentration and light emitting layer thickness will meet y≤0.5x, the relationship of 5≤w≤30；In the first blue light emitting
The control of TCTA evaporation rate is per second at 1.8 angstroms in layer, and the evaporation rate control of guest materials Firpic is per second at 0.2 angstrom, continues
Time is about 50 seconds；Then in the second blue light-emitting TCTA evaporation rate can be controlled in 1.6 angstroms it is per second, guest materials Firpic's
Evaporation rate control is per second at 0.4 angstrom, and the duration is about 50 seconds；
The preparation of step 5, electron transfer layer and hole blocking layer: electron-blocking materials TmPyPB evaporation rate is controlled 1
Angstrom per second, the duration is about 200 seconds；
The preparation of step 6, electron injecting layer and cathode: the evaporation rate control of electron injecting layer LiF is per second at 0.1 angstrom,
Evaporation time is about 60 seconds；The evaporation rate of Al cathode is about 3 angstroms per second, and the duration is about 400 seconds.
Further, the ito glass substrate pre-treatment of the step 1 specifically includes: to ito glass substrate successively acetone,
Dehydrated alcohol, deionized water sequence be cleaned by ultrasonic, every time cleaning 700 seconds, and recycle three times；By cleaned glass lined
Bottom is placed in baking 1800 seconds in 120 DEG C of baking boxes with being dried with nitrogen, and by the ito surface of the glass substrate of drying carry out oxygen etc. from
Subprocessing 1200 seconds.
Further, it after the ITO substrate processing of the step 1 is complete, is immediately placed in vacuum evaporation cavity；Using Vacuum Heat
Evaporation coating method, (~3 × 10 under UHV condition-5Pa device) is prepared.
It advantages of the present invention and has the beneficial effect that:
The present invention devises a kind of Nan dian Yao device of double emitting layers structure, since various concentration guest materials is to current-carrying
The capture of son is different, with the first smooth luminescent layer of low concentration doping while luminous, as the arrival extra sky of the second luminescent layer
The buffer area in cave；Extra hole is captured with the second luminescent layer of high concentration, the electronics entered and left with cathode is compounded to form exciton, swashs
Sub- radiation transistion shines, while the second luminescent layer has buffer function to unused excess electron.Two luminescent layer phase interactions
With not only having improved the charge balance and exciton utilization rate of each light emitting layer, but also increase light emitting region, and reduced exciton concentration and quench
It goes out caused efficiency roll-off.By using same body material, the different levels of doping of identical guest materials and same thickness
Double emitting layers structure is regulated and controled, can sufficiently improve device carrier balance, improve device against carrier utilization rate.Together
When, identical Subjective and Objective, different levels of doping double hair layers in the case where not influencing the cut-in voltage and driving voltage of device, lead to
It crosses and widens light emitting region, can effectively reduce the concentration quenching of blue emitting phosphor material, improve the efficiency roll-off of device, improve device
Performance.
The manufacturing process of device of the present invention is simple, low in cost.Especially in the manufacture of luminescent layer, double emitting layers are used
Material of main part and guest materials of the same race, significantly reduce manufacturing cost and technology difficulty, have good feasibility and repetition
Property.
Detailed description of the invention
Fig. 1 is that the present invention provides the device junction composition of preferred embodiment.
Fig. 2 is Current density-voltage-luminosity response of embodiment 1 and example 2 (comparison) device.
Fig. 3 is current efficiency-current density characteristics curve of embodiment 1 and example 2 (comparison) device.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, detailed
Carefully describe.Described embodiment is only a part of the embodiments of the present invention.
The technical solution that the present invention solves above-mentioned technical problem is:
As shown in Figure 1, a kind of Nan dian Yao device of double emitting layers structure of the present invention, including with a thickness of 1100nm's
Glass substrate, which is characterized in that have ito anode (1) on the substrate, be provided with hole injection layer on the anode (1)
(2), it is provided with hole transmission layer (3) on the hole injection layer (2), is provided with the first blue light on the hole transmission layer (3)
Luminescent layer (4) is provided with the second blue light-emitting (5) on first blue light-emitting (4), second blue light-emitting
(5) it is provided on electron transfer layer (6), is provided with electron injecting layer (7), the electron injection on the electron transfer layer (6)
It is provided with cathode (8) on layer (7), cathode (8) is opaque, has mirror-reflection effect.
First blue light-emitting (4) is identical with material of main part used by the second blue light light luminescent layer (5), object is mixed
Miscellaneous material is identical, light emitting layer thickness w identical (this example takes w=10).
The object doping concentration y of first blue light-emitting (4) is mixed not higher than the object of the second blue light light luminescent layer (5)
The 50% of miscellaneous concentration x, and each light emitting layer thickness w is between 5-30nm, i.e. y≤0.5x, 5≤w≤30, this example takes maximum
Situation x=20, y=10.
The material of main part of first blue light-emitting (4) and the second blue light light luminescent layer (5) is cavity type transmission material
Expect 4,4', 4 "-three (carbazole -9- base) triphenylamines (TCTA), object dopant material is two (4,6- difluorophenyl pyridinato-C2, N)
Pyridinecarboxylic closes iridium (Firpic).
1 device architecture of present example is Glass (1100nm)/ITO (140nm)/MoO3(3nm)/TAPC(60nm)/
TCTA:Firpic (10%, 10nm)/TCTA:Firpic (20%, 10nm)/TmPyPB (20nm)/LiF (0.6nm)/Al
(120nm)。
A kind of example and its manufacturing process of the Nan dian Yao device of double emitting layers structure are as follows:
(1) ito glass substrate pre-treatment
To ito glass substrate successively acetone, dehydrated alcohol, deionized water (3 times) sequence be cleaned by ultrasonic, it is clear every time
It washes 700 seconds, and recycles three times；By cleaned glass substrate with being dried with nitrogen, baking 1800 seconds in 120 DEG C of baking boxes are placed in,
And the ito surface of the glass substrate of drying is carried out oxygen plasma treatment 1200 seconds, it is therefore an objective to improve interfacial characteristics, improve its work content
Number.
(2) preparation of hole injection layer
Ito glass substrate after the completion of processing is placed in the intracavitary preparation for carrying out each functional layer of ultrahigh vacuum vacuum evaporation,
MoO3Evaporation rate control is per second at 0.3 angstrom, and the duration is about 100 seconds；
(3) preparation of hole transmission layer and electronic barrier layer
Hole-injecting material TAPC is heated to evaporating temperature, evaporation rate control is per second at 1 angstrom, and evaporation time is about
600 seconds；
(4) preparation of double emitting layers
Need Subjective and Objective material to steam altogether when luminescent layer is deposited, the first blue light-emitting and the and the doping of blue light-emitting object is dense
Degree and light emitting layer thickness will meet y≤0.5x, the relationship of 5≤w≤30.In this example, TCTA is deposited in the first blue light-emitting
Rate control is per second at 1.8 angstroms, and the evaporation rate control of guest materials Firpic is per second at 0.2 angstrom, and the duration is about 50 seconds；
Then TCTA evaporation rate can be controlled in 1.6 angstroms of per second, evaporation rate controls of guest materials Firpic in the second blue light-emitting
Per second at 0.4 angstrom, the duration is about 50 seconds；
(5) preparation of electron transfer layer and hole blocking layer
The control of electron-blocking materials TmPyPB evaporation rate is per second at 1 angstrom, and the duration is about 200 seconds；
(6) preparation of electron injecting layer and cathode
The evaporation rate control of electron injecting layer LiF is per second at 0.1 angstrom, and evaporation time is about 60 seconds；The vapor deposition of Al cathode
Rate is about 3 angstroms per second, and the duration is about 400 seconds.
Embodiment 2 (comparative example):
This comparative example is compared with invention device, an only luminescent layer, the first hair of object doping concentration and invention device
Photosphere is identical, light emitting layer thickness 2w, i.e., 20.Remaining structure is completely the same.Comparative device structure are as follows:
Comparative example device: Glass (1100nm)/ITO (140nm)/MoO3(3nm)/TAPC(60nm)/TCTA:Firpic
(10%, 20nm)/TmPyPB (20nm)/LiF (0.6nm)/Al (120nm)；
Device embodiments 1 of the present invention and the performance parameter comparison of comparative device embodiment 2 are as shown in the table.
By above data it can be found that the bright voltage of device of the present invention (embodiment 1) and driving voltage slightly below pair
Than device (embodiment 2), the maximal efficiency of invention device is slightly larger than comparative device.In current density 20mA/cm2Under, contrast device
The efficiency of part has decayed 35.4%；When current density reaches 80mA/cm2When, the efficiency decaying up to 67.3% of comparative device.And
Device of the present invention is 20mA/cm in current density2And 80mA/cm2When, decay 28.3% and 53.5% respectively.As it can be seen that this hair
Funerary objects part can be effectively improved the efficiency roll-off of device, improve device performance and stability, have important reference to industrial application
Value.
It should be noted that the organic material purity that the present invention uses is all larger than 99.5%.Used in this invention
Organic matter title and structural formula are as follows:
The above embodiment is interpreted as being merely to illustrate the present invention rather than limit the scope of the invention.?
After the content for having read record of the invention, technical staff can be made various changes or modifications the present invention, these equivalent changes
Change and modification equally falls into the scope of the claims in the present invention.
Claims (7)
1. a kind of Nan dian Yao of double emitting layers structure, including the glass substrate with a thickness of 1100nm, which is characterized in that the lining
Have ito anode (1) on bottom, is provided with hole injection layer (2) on the ito anode (1), is set on the hole injection layer (2)
It is equipped with hole transmission layer (3), is provided with the first blue light-emitting (4) on the hole transmission layer (3), first blue light emitting
It is provided with the second blue light-emitting (5) on layer (4), is provided with electron transfer layer (6), institute on second blue light-emitting (5)
It states and is provided on electron transfer layer (6) electron injecting layer (7), is provided with cathode (8) on the electron injecting layer (7), cathode (8)
It is opaque, there is mirror-reflection effect, ito anode (1) injects for hole and is greater than 87% in visible-range internal transmission factor,
Hole injection layer (2) is used to improve the hole injection efficiency between anode (1) and hole transmission layer (3), hole transmission layer (3)
For luminescent layer, the first blue light-emitting (4) and the second blue light-emitting (5) will to be transferred to from anode injected holes for catching
It obtains hole and electronically forms exciton, exciton radiation transistion, which is realized, to shine, and electron transfer layer (6) is used for will be from cathode injected electrons
It is transferred to luminescent layer, electron injecting layer (7) is used to improve the energy barrier between cathode (1) and electron transfer layer (3), improves electronics note
Enter efficiency, cathode (8) is opaque, for injecting electronics and reflection luminescent layer photon.It is same to cross increase luminescent layer and different object materials
Expect concentration gradient, it is different using capture ability of the guest materials various concentration to carrier, sending out the first blue light-emitting (4)
While light, have the function of buffering, same second blue light-emitting to the extra hole for reaching the second blue light-emitting (5)
(5) also having while shining has buffer function to the excess electron for reaching the first blue light-emitting (4), in double emitting layers
Under interaction, each self energy mutually utilizes superfluous electronics or hole, can not only improve and improve exciton utilization rate, and can widen
Light emitting region substantially reduces the efficiency roll-off of device.
2. a kind of Nan dian Yao of double emitting layers structure according to claim 1, which is characterized in that send out the first blue light described
Luminescent layer (4) is identical with material of main part used by the second blue light light luminescent layer (5), object dopant material is identical, shine thickness
It is identical to spend w, the material of main part of first blue light-emitting (4) and the second blue light light luminescent layer (5) is cavity type transmission material
Expect 4,4', 4 "-three (carbazole -9- base) triphenylamines (TCTA), object dopant material is two (4,6- difluorophenyl pyridinato-C2, N)
Pyridinecarboxylic closes iridium (Firpic).
3. a kind of Nan dian Yao of double emitting layers structure according to claim 2, which is characterized in that the first blue light hair
The object doping concentration y of photosphere (4) is not higher than the 50% of the object doped parameterx of the second blue light light luminescent layer (5), and each hair
Photosphere thickness w is between 5-30nm, i.e. y≤0.5x, 5≤w≤30.
4. a kind of Nan dian Yao of double emitting layers structure described in one of -3 according to claim 1, which is characterized in that the blue light
The structure of OLED are as follows: Glass (1100nm)/ITO (140nm)/MoO3(3nm)/TAPC (60nm)/TCTA:Firpic (10%,
10nm)/TCTA:Firpic (20%, 10nm)/TmPyPB (20nm)/LiF (0.6nm)/Al (120nm).
5. a kind of manufacturing process based on the Nan dian Yao of double emitting layers structure described in claim 1, which is characterized in that including with
Lower manufacturing process:
Step 1, ito glass substrate pre-treatment
The preparation of step 2, hole injection layer: the ito glass substrate merging ultrahigh vacuum vacuum evaporation after the completion of processing is intracavitary
Carry out the preparation of each functional layer, MoO3Evaporation rate control is per second at 0.3 angstrom, and the duration is about 100 seconds；
The preparation of step 3, hole transmission layer and electronic barrier layer: being heated to evaporating temperature for hole-injecting material TAPC, steams
Plating rate control is per second at 1 angstrom, and evaporation time is about 600 seconds；
The preparation of step 4, double emitting layers: needing Subjective and Objective material to steam altogether when vapor deposition luminescent layer, the first blue light-emitting and the and it is blue
Light luminescent layer object doping concentration and light emitting layer thickness will meet y≤0.5x, the relationship of 5≤w≤30；In the first blue light-emitting
The control of TCTA evaporation rate is per second at 1.8 angstroms, and the evaporation rate of guest materials Firpic was controlled in 0.2 angstrom of per second, duration
About 50 seconds；Then TCTA evaporation rate can be controlled in 1.6 angstroms of per second, vapor depositions of guest materials Firpic in the second blue light-emitting
Rate control is per second at 0.4 angstrom, and the duration is about 50 seconds；
The preparation of step 5, electron transfer layer and hole blocking layer: the control of electron-blocking materials TmPyPB evaporation rate is every at 1 angstrom
Second, the duration is about 200 seconds；
The preparation of step 6, electron injecting layer and cathode: the evaporation rate control of electron injecting layer LiF is per second at 0.1 angstrom, vapor deposition
Time is about 60 seconds；The evaporation rate of Al cathode is about 3 angstroms per second, and the duration is about 400 seconds.
6. the manufacturing process of the Nan dian Yao of double emitting layers structure according to claim 5, which is characterized in that the step 1
Ito glass substrate pre-treatment specifically include: to ito glass substrate successively acetone, dehydrated alcohol, deionized water sequence carry out
Ultrasonic cleaning is cleaned 700 seconds every time, and is recycled three times；By cleaned glass substrate with being dried with nitrogen, it is placed in 120 DEG C of bakings
Baking 1800 seconds in case, and the ito surface of the glass substrate of drying is carried out oxygen plasma treatment 1200 seconds.
7. the manufacturing process of the Nan dian Yao of double emitting layers structure according to claim 5, which is characterized in that the step 1
ITO substrate processing it is complete after, be immediately placed in vacuum evaporation cavity；Using vacuum thermal evaporation method, under UHV condition
(~3 × 10-5Pa device) is prepared.
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| CN110854279A (en) * | 2019-10-22 | 2020-02-28 | 深圳市华星光电技术有限公司 | OLED display panel and display device |
| CN110862467A (en) * | 2019-09-25 | 2020-03-06 | 青岛科技大学 | Selective hydrogenation method for conjugated diene rubber latex |
| CN111564565A (en) * | 2020-05-25 | 2020-08-21 | 京东方科技集团股份有限公司 | Light emitting device, display apparatus, and light emitting device manufacturing method |
| CN113036044A (en) * | 2019-12-25 | 2021-06-25 | 合肥欣奕华智能机器有限公司 | Organic light-emitting device, display device and preparation method thereof |
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| CN104638115A (en) * | 2013-11-12 | 2015-05-20 | 海洋王照明科技股份有限公司 | Organic light-emitting device and preparation method thereof |
| CN109088008A (en) * | 2018-08-23 | 2018-12-25 | 京东方科技集团股份有限公司 | A kind of organic luminescent device and display panel |
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