CN103746035A - Compound technology for metallization of front side of solar cell - Google Patents
Compound technology for metallization of front side of solar cell Download PDFInfo
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- CN103746035A CN103746035A CN201410000933.0A CN201410000933A CN103746035A CN 103746035 A CN103746035 A CN 103746035A CN 201410000933 A CN201410000933 A CN 201410000933A CN 103746035 A CN103746035 A CN 103746035A
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- 238000005516 engineering process Methods 0.000 title claims abstract description 116
- 238000001465 metallisation Methods 0.000 title abstract description 14
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims description 83
- 230000008569 process Effects 0.000 claims description 51
- 239000002002 slurry Substances 0.000 claims description 26
- 238000007650 screen-printing Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 230000001788 irregular Effects 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 2
- 238000005553 drilling Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 238000005275 alloying Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 229920005594 polymer fiber Polymers 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the field of preparation technology of solar cells, and specifically relates to a compound technology for metallization of the front side of a solar cell. Main grid lines of the solar cell or main grind lines and partial fine grid lines of the solar cell are prepared by taking a traditional technology as basic technology, and fine grid lines of the front side of the solar cell are prepared by taking an emerging wire enhanced metallization (WEM) technology as main technology, so that the flexibility when a traditional metallization technology is used is fully showed, and the characteristic of high efficiency of the WEM technology is also showed; therefore, the limits of existing equipment for the WEM technology in comprehensive application of solar cell production are broken through.
Description
Technical field
The present invention relates to solar cell preparation technology field, be specifically related to the metallized combination process of a kind of solar battery front side.
Background technology
Crystal silicon solar energy battery comprises monocrystaline silicon solar cell and polysilicon solar cell, in general, polysilicon solar cell is mainly the rectangle silicon chip based on a kind of regular shape, and monocrystaline silicon solar cell is mainly the class rectangle silicon chip that has circular arc chamfering based on a kind of.
Traditional front electrode of solar battery is mainly to make front electrode of solar battery by silk-screen printing technique printing, owing to can disposablely design the printed pattern needing on half tone, so traditional silk-screened technique can disposablely complete main grid line and the carefully preparation of grid line in front electrode of solar battery, this kind of front metal metallization processes is single technique.
Solar battery front side metallization technology, except silk screen printing, also has plating, inkjet printing, evaporation, laser etc., and the applied in any combination between these different metal technology has just formed combination process.Current line high efficiency technical in the industry also has the feature of combination process structure mostly.Such as, the twice printing combination process producing by the overlapping use of screen printing technique, by silk screen printing and electroplating technology are used in combination to electroplate as main combination process, by the MWT(Metal-Wrapthrough that laser technology and screen printing technique are used in combination) technology is also a kind of typical combination process etc.
In combination process structure, some technique is for completing basic processing preparation or the restriction to the subsequent technique zone of action, being called fundamental technology; Another part technique is to be used in combination more advanced technology on the basis in the region limiting at fundamental technology or at fundamental technology, gives full play to the superiority of advanced technologies, and this kind can be described as main process.Such as, with silk screen printing, prepare Seed Layer but still with electroplating technology, prepare the electroplating technology of main body grid line.Also in the combination process having, variant technique completes respectively the effect that meaning is identical, and what its contribution that battery efficiency is promoted was main is the cooperation between different process, such as, the combination process that twice printing technology is used in combination.
Line reinforced metal (Wire Enhanced Metallization, hereinafter to be referred as WEM technology) be the new technology of preparing front electrode of solar battery by coated with conductive slurry in conductive fiber surfaces, with respect to existing silk-screen printing technique, it can prepare the thin grid line of meticulousr solar battery front side, be a kind of emerging high-efficiency battery production technology, have more wide application prospect (Chinese invention patent application " a kind of solar battery sheet electrode structure at right side and preparation method thereof " that is CN201210243879.3 referring to application number).In WEM technology, fiber surface equably coated with conductive slurry be (Chinese invention patent application " a kind of for wrap wrapping up in pulp grinder structure and wrapping up in paste-making method of electrocondution slurry on conductive filament surface " that is CN201210244007.9 referring to application number) that pulp grinder structure is realized of wrapping up in by a kind of particular design, this mechanism can apply the electrocondution slurry that one deck length is certain equably at the fiber surface of equidistantly arranging, and the electrocondution slurry length applying on every fiber in ranks is all identical.Cell piece main grid line live width is wider, and therefore applying WEM technology, to make main grid line be not easily, and some traditional solar battery front side metallization technology is if screen printing technique is to make aspect main grid line cost lower than WEM technology.For polysilicon solar cell, due to its regular rectangular shape, can apply easily WEM technology and make all thin grid lines; But for monocrystaline silicon solar cell, every of the thin grid line slurry length of its chamfer site is all different from the slurry length of its thin grid line in rectangular portion position, center, and this also just limits the application of efficient WEM technology on the monocrystaline silicon solar cell with circular arc chamfering.
Summary of the invention
For solving the defect of above-mentioned prior art, the invention provides the metallized combination process of a kind of solar battery front side, by being used in combination conventional solar cell metallization technology and the WEM technology take screen printing technique as representative, both brought into play conventional art as the flexibility aspect preparing at electrode pattern of screen printing technique or ink-jet technology, also can make the applicable object of WEM technology wider, performance WEM technology grid line become more meticulous and battery-efficient aspect advantage, thereby promote solar battery front side metallize product quality and the production efficiency of integrated artistic.
One of technical scheme of the present invention is: the metallized combination process of a kind of solar battery front side, comprise fundamental technology and main process, fundamental technology refers to prepare the main grid line in front electrode of solar battery structure with the combination of one or more technology of screen printing technique, electroplating technology, inkjet technology, evaporation coating technique, laser technology; Main process refers to prepare thin grid line by WEM technology.This scheme is mainly applicable to regular cell piece, and such as polysilicon solar cell, cell shapes is regular rectangle, and in front electrode, the length of thin grid line is all consistent.The cell piece of rule both comprised because of the consistent situation of thin grid line length in the own regular shape of cell piece (for rectangle) thereby this region, also comprised the out-of-shape of cell piece own but its situation of thin grid line pattern rule (for isometric sets of parallel).
Two of technical scheme of the present invention is: the metallized combination process of a kind of solar battery front side, comprise fundamental technology and main process, fundamental technology refers to prepare main grid line in front electrode of solar battery structure and the thin grid line of solar battery front side irregular area part with the combination of one or more technology of screen printing technique, electroplating technology, inkjet technology, evaporation coating technique, laser technology; Main process refers in fundamental technology regular domain after treatment, prepare thin grid line by WEM technology.Irregular area both comprised because of the inconsistent situation of thin grid line length in the own out-of-shape of cell piece (non-rectangle) thereby this region, also comprised the regular shape of cell piece own but the situation of thin grid line pattern irregular (non-isometric sets of parallel) in this region.Such as, monocrystaline silicon solar cell, its chamfered area shape is not regular rectangular shape, and the thin grid line in inconsistent and this region of the thin grid line length of the length of the thin grid line in this region and central area is also different in size, can not prepare by WEM technology.Therefore need in fundamental technology, prepare main grid line simultaneously and be positioned at the thin grid line of chamfered area, just can the making by WEM technology of the thin grid line in remaining regular rectangular area.
Preferably, described fundamental technology is, in conjunction with laser drilling and screen printing technique, main grid line is wound up into cell backside.
Preferably, in described fundamental technology, main grid line is 1-10 root, is arranged on the edge of cell piece, or equidistant parallel being distributed on cell piece.
Optionally, in described fundamental technology, main grid line is solid construction or segmental structure or engraved structure.
Optionally, in institute's fundamental technology, use ink-jet technology or evaporation coating technique or laser technology, can first complete fundamental technology and carry out again main process, also can first complete main process and carry out again fundamental technology.Because ink-jet technology or evaporation coating technique or laser technology are non-pressure metallization technology, all it doesn't matter first to make main grid line or thin grid line.
Preferably, described main process comprises the following steps: (one) wraps electrocondution slurry on conductive filament surface; (2) conductive filament that has wrapped electrocondution slurry is adhered on described cell piece perpendicular to main grid line direction; (3) the described cell piece of making is put in oven dry and sintering furnace and dried sintering.Described conductive filament is wire, there is the polymer fiber of electric conductivity, have conductive coating wire, there are one or more of polymer fiber of conductive coating.
Preferably, when described conductive filament being pasted on described cell piece front, the edges at two ends of the described conductive filament that wraps electrocondution slurry does not enter the etch areas at cell piece edge, the edges at two ends of the described conductive filament that wraps electrocondution slurry is 0.5mm-2mm with the distance of the edges at two ends of described cell piece respectively, and both sides symmetry.
Preferably, before wrapping electrocondution slurry, described conductive filament is equidistantly arranged in parallel.
Preferably, the diameter range of described conductive filament is 0.01mm-0.03mm, and the spaced spacing of described conductive filament is 0.5mm-3mm.
Combination process of the present invention has proposed a kind of take WEM technology (line reinforced metal technology) as main combination process, take conventional art as basic technology, prepare main grid line and the parts of fine grid line of solar cell, coordinate again the thin grid line of solar battery front side in the brand-new remaining region of WEM technology preparation, flexibility while both having given full play to conventional metals utilization, also bring into play the efficient feature of WEM technology, thereby broken through the restriction that WEM technology existing equipment is applied in the out-of-shape battery production such as monocrystaline silicon solar cell.Deficiency when this combination process has avoided monotechnics to use separately in solar battery front side metallization processes, by the optimum organization of different technologies, both brought into play conventional art as the flexibility aspect preparing at electrode pattern of screen printing technique or ink-jet technology, also make WEM technology can more freely bring into play its grid line become more meticulous and high-efficiency battery aspect advantage, reach the effect of having complementary advantages between different technologies, thereby promote product quality and the production efficiency of solar battery front side metallization integrated artistic.
Accompanying drawing explanation
Fig. 1 has been the polysilicon solar battery slice schematic diagram of fundamental technology;
Fig. 2 has been the polysilicon solar battery slice schematic diagram of main process;
Fig. 3 has been the monocrystaline silicon solar cell sheet schematic diagram of fundamental technology;
Fig. 4 has been the monocrystaline silicon solar cell sheet schematic diagram of main process;
Fig. 5 is the cross sectional representation of the thin grid line prepared of WEM technology.
Description of symbols in accompanying drawing: 1. cell piece; 2. main grid line; 3. the thin grid line of silk screen printing; Thin grid line prepared by 4.WEM technology.
Embodiment
Below in conjunction with specific embodiment and Figure of description, combination process of the present invention is elaborated.
Embodiment mono-
The present embodiment is to produce polysilicon solar battery slice as example, and the step of the metallized combination process of battery front side is as follows:
One, one of design only has the printing screen plate of main grid line, on polysilicon solar battery slice 1, with screen printing technique, prepares main grid line 2, and main grid line width is 1.5mm, 2 altogether, is evenly distributed on cell piece surface;
Two, by WEM technology, in the direction perpendicular to main grid line 2, prepare thin grid line 4: selecting the wire that 80 diameter ranges are 0.01mm-0.03mm is conductive filament, and 80 conductive filaments are equidistantly arranged in parallel, and the spaced spacing of conductive filament is 0.5mm-3mm; Then with wrapping up in pulp grinder structure, one deck electrocondution slurry will evenly be wrapped on conductive filament surface; The conductive filament that has wrapped electrocondution slurry is adhered on described cell piece perpendicular to main grid line direction, and the thin grid line 4 at edge is apart from cell piece 1 edge 1.5mm, and described in wrap the etch areas that the edges at two ends of the conductive filament of electrocondution slurry does not enter cell piece edge.
Three, by posting conductive filament cell piece 1, at the temperature of 200-400 ℃, dry, then together with back electrode at the temperature of 700-900 ℃ sintering, make simultaneously electrocondution slurry sinter complete conductor into conductive filament, make thin grid line 4 prepared by WEM technology and main grid line 2 and cell piece 1 surface form firmly alloying and contact and good ohmic contact.So far, electrode fabrication is complete.
In the present embodiment, because polycrystalline battery does not have circular arc chamfering, all thin grid lines can be prepared by WEM technology.Use this process combination, can embody screen printing technique economy when preparing main grid line on the one hand, also can fully demonstrate on the other hand high efficiency and the high-accuracy property of WEM technology when the thin grid line of preparation.
Embodiment bis-
The present embodiment is take produce single crystal silicon solar cell as example, and the step of the metallized combination process of battery front side is as follows:
One, one of design has main grid line and rounded corner position the printing screen plate of thin grid line, on monocrystaline silicon solar cell sheet 1, with screen printing technique, prepare main grid line 2, width is 1.5mm, 2 altogether, and in the circular arc chamfered area at cell piece edge, with screen printing technique, prepare thin grid line 3 simultaneously, each 4 of both sides, the thin grid line 3 keeping to the side is most apart from cell piece edge 1.5mm;
Two, by WEM technology, in the direction perpendicular to main grid line 2, prepare thin grid line 4: selecting the wire that 60 diameter ranges are 0.01mm-0.03mm is conductive filament, and 60 conductive filaments are equidistantly arranged in parallel, and the spaced spacing of conductive filament is 0.5mm-3mm; Then with wrapping up in pulp grinder structure, one deck electrocondution slurry will evenly be wrapped on conductive filament surface; The conductive filament that has wrapped electrocondution slurry is adhered on described cell piece perpendicular to main grid line direction, the distance between centers of tracks of thin grid line 4 is identical with the distance between centers of tracks of thin grid line 3, the thin grid line 4 at edge is apart from cell piece 1 edge 1.5mm, and described in wrap the etch areas that the edges at two ends of the conductive filament of electrocondution slurry does not enter cell piece edge.
Three, by posting conductive filament cell piece 1, at the temperature of 200-400 ℃, dry, then together with back electrode at the temperature of 700-900 ℃ sintering, make while electrocondution slurry and conductive filament sinter complete conductor into, make the thin grid line 3 of silk screen printing, thin grid line 4, main grid line 2 and cell piece 1 surface prepared by WEM technology form firmly alloying contact and good ohmic contact.So far, electrode fabrication is complete.
In the present embodiment, due to the limitation of existing WEM equipment, can not wrap up in the thin grid line 4 that slurry length is successively decreased in chamfered area preparation, take screen printing technique as supplementing drawing process program and can making WEM technology successfully be applied to the preparation of monocrystaline silicon solar cell front-side metallization of technology, by the optimum organization of different technologies, give full play to the advantage separately of conventional art and emerging technology, promote product quality and the production efficiency of solar battery front side metallization integrated artistic.
Above-described embodiment is preferred embodiment of the present invention; the present invention is not limited to above-mentioned specific embodiment; do not deviating from spirit of the present invention and situation thereof, the change that those of ordinary skill in the art can make according to the present invention and distortion, within all should belonging to the protection range of the claims in the present invention.
Claims (10)
1. the metallized combination process of solar battery front side, comprise fundamental technology and main process, it is characterized in that: described fundamental technology refers to prepare the main grid line in front electrode of solar battery structure with the combination of one or more technology of screen printing technique, electroplating technology, inkjet technology, evaporation coating technique, laser technology; Main process refers to prepare thin grid line by WEM technology.
2. the metallized combination process of solar battery front side, comprise fundamental technology and main process, it is characterized in that: described fundamental technology refers to prepare main grid line in front electrode of solar battery structure and the thin grid line of solar battery front side irregular area part with the combination of one or more technology of screen printing technique, electroplating technology, inkjet technology, steel version printing technology, evaporation coating technique, laser technology; Described main process refers in fundamental technology regular domain after treatment, prepare thin grid line by WEM technology.
3. the metallized combination process of solar battery front side according to claim 1 and 2, is characterized in that, described fundamental technology is, in conjunction with laser drilling and screen printing technique, main grid line is wound up into cell backside.
4. the metallized combination process of solar battery front side according to claim 1 and 2, is characterized in that, in described fundamental technology, main grid line is 1-10 root, is arranged on edge or equidistant parallel being distributed on cell piece of cell piece.
5. the metallized combination process of solar battery front side according to claim 1 and 2, is characterized in that, in described fundamental technology, main grid line is solid construction or segmental structure or engraved structure.
6. the metallized combination process of solar battery front side according to claim 1 and 2, it is characterized in that, in institute's fundamental technology, use ink-jet technology or evaporation coating technique or laser technology, first complete fundamental technology and carry out again main process or first complete main process carrying out again fundamental technology.
7. the metallized combination process of solar battery front side according to claim 1 and 2, is characterized in that, described main process comprises the following steps: (one) wraps electrocondution slurry on conductive filament surface; (2) conductive filament that has wrapped electrocondution slurry is adhered on described cell piece perpendicular to main grid line direction; (3) the described cell piece of making is put in oven dry and sintering furnace and dried sintering.
8. the metallized combination process of solar battery front side according to claim 9, it is characterized in that: when described conductive filament being pasted on described cell piece front, the edges at two ends of the described conductive filament that wraps electrocondution slurry does not enter the etch areas at cell piece edge, the edges at two ends of the described conductive filament that wraps electrocondution slurry is 0.5mm-2mm with the distance of the edges at two ends of described cell piece respectively, and both sides symmetry.
9. the metallized combination process of solar battery front side according to claim 9, is characterized in that: before wrapping electrocondution slurry, described conductive filament is equidistantly arranged in parallel.
10. the metallized combination process of solar battery front side according to claim 9, is characterized in that: the diameter range of described conductive filament is 0.01mm-0.03mm, and the spaced spacing of described conductive filament is 0.5mm-3mm.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105702759A (en) * | 2016-04-28 | 2016-06-22 | 泰州乐叶光伏科技有限公司 | Main grid electrode structure of solar cell and preparation method thereof |
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CN102214729A (en) * | 2010-04-09 | 2011-10-12 | 陕西众森电能科技有限公司 | Front electrode structure of solar battery and manufacturing method of front electrode structure |
CN102544235A (en) * | 2012-02-24 | 2012-07-04 | 上饶光电高科技有限公司 | Preparation method for MWT solar battery electrode |
CN102800712A (en) * | 2012-07-16 | 2012-11-28 | 杭州塞利仕科技有限公司 | Solar cell positive electrode structure and manufacturing method thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102214729A (en) * | 2010-04-09 | 2011-10-12 | 陕西众森电能科技有限公司 | Front electrode structure of solar battery and manufacturing method of front electrode structure |
CN102544235A (en) * | 2012-02-24 | 2012-07-04 | 上饶光电高科技有限公司 | Preparation method for MWT solar battery electrode |
CN102800712A (en) * | 2012-07-16 | 2012-11-28 | 杭州塞利仕科技有限公司 | Solar cell positive electrode structure and manufacturing method thereof |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105702759A (en) * | 2016-04-28 | 2016-06-22 | 泰州乐叶光伏科技有限公司 | Main grid electrode structure of solar cell and preparation method thereof |
CN105702759B (en) * | 2016-04-28 | 2018-03-09 | 泰州隆基乐叶光伏科技有限公司 | A kind of solar cell primary gate electrode structure and preparation method thereof |
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Application publication date: 20140423 |