CN103745977B - OTP parts structure and processing method thereof - Google Patents
OTP parts structure and processing method thereof Download PDFInfo
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- CN103745977B CN103745977B CN201410016428.5A CN201410016428A CN103745977B CN 103745977 B CN103745977 B CN 103745977B CN 201410016428 A CN201410016428 A CN 201410016428A CN 103745977 B CN103745977 B CN 103745977B
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Abstract
The invention provides a kind of OTP parts structure, this OTP parts structure includes: substrate；Form thin grid oxygen low pressure memory device over the substrate and thick grid oxygen HT selector part；Described thin grid oxygen low pressure memory device includes being formed at the active area among described substrate, and covers the thin gate oxide on described active area and interdigitation grid, and wherein said interdigitation grid includes a plurality of gate line.A kind of OTP parts structure, this OTP parts includes: substrate；Form thin grid oxygen low pressure memory device over the substrate and thick grid oxygen HT selector part；Described thin grid oxygen low pressure memory device includes the interdigitation active area being formed among described substrate, and cover the thin gate oxide on described interdigitation active area and grid, including polylith stripe region in wherein said interdigitation active area, this polylith stripe region extends along grid length direction.Present invention also offers a kind of OTP memory structure.
Description
Technical field
The present invention relates to the Design and Machining field of semiconductor device, particularly relate to OTP parts structure and processing thereof
Method.
Background technology
In embedded non-volatile memory field, disposable programmable (One Time based on anti-fuse structures
Programmable, OTP) memorizer is because of its high stability and CMOS technology is completely compatible, programming is held
The advantage such as easily, is widely used in analog circuit fine setting, key and chip id storage, SRAM/DRAM
Redundancy Design, RFID etc..At present, the anti-fuse structures of main flow uses metal-oxide-semiconductor to realize.Refer to Fig. 1,
Structure shown in Fig. 1 is the sectional structure schematic diagram of the OTP parts structure of prior art, and this OTP parts is tied
Structure is made up of thin grid oxygen low pressure memory device and thick grid oxygen HT selector part, as it is shown in figure 1, the thinnest grid
Oxygen low pressure memory device is by substrate 1, thin gate oxide 4, grid 3 and active area 2 structure being formed in substrate 1
Becoming, correspondingly, thick grid oxygen HT selector part is by substrate 1, thick grating oxide layer 6, grid 5 and active area 2
Constitute.The circuit structure of this OTP parts structure refer to Fig. 2, when this OTP parts structure is performed programming,
High pressure is added in grid 3 and the active area 2 of described thin grid oxygen low pressure memory device, as a example by 0.18 μm technique,
Making alive WL0=8V on grid 3, making alive BL0=0V on active area 2, thin oxide gate after a period of time
Layer 4 is forever punctured.
With continued reference to Fig. 1, for thin grid oxygen low pressure memory device, to hitting that it is programmed being caused
Wear and be a little likely distributed in 3 regions, grid 3 the most illustrated in fig. 1 and the LDD of active area 2 infall
Channel region 8 below (Lightly Doped Drain, lightly doped drain) district 7, or thin gate oxide 4,
Or the Halo transition region that LDD region 7 and channel region 8 are between the two.For read operation, breakdown point
The when of being positioned at LDD region 7, read current is bigger；The when that breakdown point being positioned at channel region 8, read current is moderate；If
Breakdown point is positioned at described Halo transition region, then owing to the doping content in this region is higher than substrate, so having
More high threshold voltage, it is therefore desirable to higher voltage could transoid, so read current less and be not easy by
Detect.After thin grid oxygen low pressure memory device is performed programming, if breakdown point occurs in described Halo transition
It is easily caused this thin grid oxygen low pressure memory device program fail in district, thus reduces the product of OTP parts structure
Yield.From the point of view of the circuit structure shown in Fig. 2, breakdown point occurs in described Halo transition region and then can be considered as
Thin grid oxygen low pressure memory device therein is blocked and read current cannot be detected.
As it is shown on figure 3, Fig. 3 is the front view that the OTP parts structure shown in Fig. 1 is observed from grid height direction, logical
Often breakdown point is positioned at the probability of LDD region 7 relatively greatly, and grid 3 is the weakest being easiest to active area 2 infall
Position shown by multiple circles 11 in the region punctured, such as Fig. 3, certain breakdown point also has necessarily
Probability occurs in described Halo transition region or aforementioned trenches district 8, rather than in Fig. 3 shown by multiple circles 11
Position, from the point of view of the convenient detection of read current, in the ideal case, deposits described thin grid oxygen low pressure
Memory device expects that breakdown point is in LDD region 7 after performing programming.
On the whole, impact should owing to the appearance position of breakdown point is uncontrollable for existing otp memory part
The product yield of OTP parts structure.
Summary of the invention
Present invention aims to solve problems of the prior art, by the OTP that offer is novel
Device architecture is to promote the yield of OTP parts.
On the one hand, the invention provides a kind of OTP parts structure, this OTP parts structure includes:
Substrate；
Form thin grid oxygen low pressure memory device over the substrate and thick grid oxygen HT selector part；
Described thin grid oxygen low pressure memory device includes being formed at the active area among described substrate, and covers
Thin gate oxide on described active area and interdigitation grid, wherein said interdigitation grid includes many
Bar gate line.
According to one embodiment of present invention, in this OTP parts structure: described interdigitation grid also includes main
Grid, described a plurality of gate line is connected with described main grid and extends along grid length direction.
According to one embodiment of present invention, in this OTP parts structure: described a plurality of gate line is in grid width side
The most arranged in parallel.
According to one embodiment of present invention, in this OTP parts structure: described gate line is on grid width direction
Width range be 5nm to 5 μm.
According to one embodiment of present invention, in this OTP parts structure: adjacent in described a plurality of gate line
Between pair of grid lines, the scope of the distance on grid width direction is 5nm to 5 μm.
According to one embodiment of present invention, in this OTP parts structure: described a plurality of gate line is rectangular at grid
The most arranged in parallel.
According to one embodiment of present invention, in this OTP parts structure: described gate line is on grid length direction
Width range be 5nm to 5 μm.
According to one embodiment of present invention, in this OTP parts structure: adjacent in described a plurality of gate line
Between pair of grid lines, the scope of the distance on grid length direction is 5nm to 5 μm.
According to one embodiment of present invention, in this OTP parts structure: described active area is that interdigitation is active
District, includes polylith stripe region in this interdigitation active area, and this polylith stripe region is the most arranged in parallel.
On the other hand, the invention provides a kind of OTP parts structure, this OTP parts includes:
Substrate；
Form thin grid oxygen low pressure memory device over the substrate and thick grid oxygen HT selector part；
Described thin grid oxygen low pressure memory device includes the interdigitation active area being formed among described substrate, with
And covering the thin gate oxide on described interdigitation active area and grid, wherein said interdigitation is active
Including polylith stripe region in district, this polylith stripe region extends along grid length direction.
According to one embodiment of present invention, in this OTP parts structure: described polylith stripe region is in grid width
On direction the most arranged in parallel.
According to one embodiment of present invention, in this OTP parts structure: described stripe region is in grid width direction
On width range be 5nm to 5 μm.
According to one embodiment of present invention, in this OTP parts structure: adjacent in described polylith stripe region
A pair stripe region between the scope of distance on grid width direction be 5nm to 5 μm.
According to one embodiment of present invention, in this OTP parts structure: described grid is interdigitation grid,
This interdigitation grid includes a plurality of gate line, and this plurality of gate line is the most arranged in parallel on grid length direction.
Another aspect, present invention also offers a kind of OTP memory structure, and this OTP memory structure includes:
At least one memory element；
The multiple redundant storage units corresponding with each described memory element；
Described memory element and described redundant storage unit include any one OTP parts structure described previously；
The plurality of redundant storage unit, for many to this after detecting described memory element program fail
Individual redundant storage unit order performs redundancy programming, until detecting that current redundant storage unit is programmed to
The programming of described redundancy is stopped after merit.
According to one embodiment of present invention, in this OTP memory structure: described memory element is arranged on OTP
In storage array；The plurality of redundant storage unit is separately positioned in different OTP redundant storage arrays.
The OTP parts structure that the present invention provides improves the active of it thin grid oxygen low pressure memory device included
District's shape and/or gate shapes, from circuit structure, the thin grid oxygen low pressure memorizer with prior art
Part only has a storage tube and compares, and the thin grid oxygen low pressure memory device after this improvement has multiple parallel connection
Storage tube, first, the storage tube of the plurality of parallel connection has relatively independent breakdown probability and breakdown point distribution
Location probability, namely after meaning to be programmed the plurality of storage tube, compiling all occurs in all of storage tube
The probability that journey is failed is less, can be greatly increased the probability that read current can be detected；Further, arranging should
Multiple storage tubes can improve read current, makes the read current of OTP parts structure be more easily detected.
Additionally, the OTP memory structure that the present invention provides employs the OTP parts structure conduct that the present invention provides
Memory element and redundant storage unit, wherein said redundant storage unit is used as to tackle described memory element and compiles
Later programmed is carried out, with the OTP ensured in OTP memory structure on programmed logic in the case of journey failure
Memory element can detect read current.
To sum up, the OTP parts structure of present invention offer and OTP memory structure, all improve the product of chip
Yield.
Accompanying drawing explanation
The detailed description that non-limiting example is made made with reference to the following drawings by reading, this
Bright other features, objects and advantages will become more apparent upon:
Fig. 1 is the sectional structure schematic diagram of the OTP parts structure of prior art；
Fig. 2 is the electrical block diagram corresponding to OTP parts structure shown in Fig. 1；
Fig. 3 is the front view that the OTP parts structure shown in Fig. 1 is observed from grid height direction；
Fig. 4 is that a detailed description of the invention of the OTP parts structure according to the present invention is observed from grid height direction
Front view；
Fig. 5 is the electrical block diagram of the OTP parts structure shown in Fig. 4；
Fig. 6 is that the another embodiment of the OTP parts structure according to the present invention is seen from grid height direction
The front view examined；
Fig. 7 is the electrical block diagram of the OTP parts structure shown in Fig. 6；
Fig. 8 is that the another embodiment of the OTP parts structure according to the present invention is seen from grid height direction
The front view examined；
Fig. 9 is the electrical block diagram of the OTP parts structure shown in Fig. 8；
Figure 10 is that a detailed description of the invention of another OTP parts structure according to the present invention is from grid height direction
The front view observed；
Figure 11 is the schematic diagram of the circuit structure of the OTP parts structure shown in Figure 10；
Figure 12 is that a preferred embodiment of the OTP parts structure shown in Figure 10 is from grid height direction
The front view observed；
Figure 13 is the structural representation of the OTP memory structure according to the present invention.
In accompanying drawing, same or analogous reference represents same or analogous parts.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to this
Bright embodiment is described in detail.
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, wherein
The most same or similar label represents same or similar element or has same or like function
Element.The embodiment described below with reference to accompanying drawing is exemplary, is only used for explaining the present invention, and
It is not construed as limiting the claims.Equally, each several part in the sectional structure schematic diagram shown in accompanying drawing
Do not draw in strict accordance with actual size, and be only schematically effect.
Following disclosure provides many different embodiments or example for realizing the different knots of the present invention
Structure.In order to simplify disclosure of the invention, hereinafter parts and setting to specific examples are described.When
So, they are the most merely illustrative, and are not intended to limit the present invention.Additionally, the present invention can be not
With repeat reference numerals in example and/or letter.This repetition is for purposes of simplicity and clarity, its
Body does not indicate the relation between discussed various embodiment and/or setting.Additionally, the invention provides is each
Kind of specific technique and the example of material, but those of ordinary skill in the art are it can be appreciated that other technique
The property of can be applicable to and/or the use of other materials.It addition, fisrt feature described below is in second feature
It " on " structure can include that the first and second features are formed as the embodiment directly contacted, it is also possible to include
Other feature is formed at the embodiment between the first and second features, and such first and second features may
It it not directly contact.
Refer to Fig. 4, Fig. 4 be OTP parts structure according to the present invention a detailed description of the invention from
The front view that grid height direction is observed, this OTP parts structure includes:
Substrate 100；
Form thin grid oxygen low pressure memory device over the substrate and thick grid oxygen HT selector part；
Described thin grid oxygen low pressure memory device includes the active area 110 being formed among described substrate, and covers
Covering the thin gate oxide on described active area and interdigitation grid, wherein said interdigitation grid includes
A plurality of gate line 121.
Although it will be appreciated by those skilled in the art that described thin gate oxide is not shown in FIG. 4, but
This thin gate oxide covers on active area 110, and between described interdigitation grid and substrate 100,
Between the most each gate line 121 and substrate 100, described thin gate oxide is all set.Additionally, shown in Fig. 4
In the OTP parts structure gone out, described thick grid oxygen HT selector part by substrate 100, be formed at described lining
Active area 110, thick grating oxide layer and grid 130 are constituted at the end, and wherein the arrangement of each several part can
With reference to prior art, do not repeat them here.Similarly, although described thick grating oxide layer not shown in Fig. 4,
But skilled artisan would appreciate that this thick grating oxide layer covers on substrate 100, and be arranged on grid
Between pole 130 and substrate 100.
Substrate 100 includes silicon substrate (such as wafer).(such as P is required according to design known in the art
Type substrate or N-type substrate), substrate 100 can include various doping configuration.Substrate in other embodiments
201 can also include other basic quasiconductors, such as germanium.Or, substrate 100 can include compound half
Conductor, such as carborundum, GaAs, indium arsenide or indium phosphide.In the present embodiment, substrate 100
It it is silicon substrate.Typically, the thickness of substrate 100 can be but not limited to the most hundreds of micron, the most permissible
In the thickness range of 400 μm-800 μm.In an alternate embodiment of the invention, substrate 100 can be formed every
From district, such as STI isolation area, for the OTP parts structure that will provide in this detailed description of the invention and institute
Stating other device isolation on substrate 100, the material of described isolation area is insulant, such as, can use
SiO2Or Si3N4, and the design requirement that the width of described isolation area can regard semiconductor structure determines.
Described active area 110 can be formed by the method for ion implanting, the impurities of described ion implanting
Type is consistent with type of device.That is, if device is NMOS, then the dopant type of ion implanting is N-type；
If device is PMOS, then the dopant type of ion implanting is p-type.
The material of described thin gate oxide and described thick grating oxide layer can be thermal oxide layer, including silicon oxide
Or silicon oxynitride, it is possible to for high K dielectric, such as HfO2、HfSiO、HfSiON、HfTaO、HfTiO、
HfZrO、Al2O3、La2O3、ZrO2, one in LaAlO or a combination thereof, described thin gate oxide and
The thickness of described thick grating oxide layer is relevant with the design requirement of described OTP parts structure, specifically, and this tool
The thickness of the described thin gate oxide mentioned in body embodiment is less than or equal to 5 nanometers, and described thick grid oxygen is high
The thickness of the thick grating oxide layer of pressure selector is more than or equal to 1.5 times of the thickness of described thin gate oxide.
In this embodiment, described a plurality of gate line 121 parallel discretely on grid length direction
Row, together, each gate line 121 is with short circuit point for initial edge for the shorted on one end of this plurality of gate line 121
Grid width direction extends to the opposite side of substrate.Simultaneously this plurality of gate line 121 also with thick grid oxygen HT selector
The grid 130 of part is parallel and short circuit.Preferably, each gate line 121 width range on grid length direction
It is 5nm to 5 μm, in described a plurality of gate line 121 between adjacent pair gate line 121 on grid length direction
The scope of distance be 5nm to 5 μm.The grid length of grid 130 is more than or equal to gate line 121 at grid length direction
On 1.5 times of width.
In an alternate embodiment of the invention, the sidewall of described gate line 121 and/or grid 130 can be formed around these grid
The side wall (not shown) of polar curve 121 and/or grid 130, this side wall is for by grid 121 and/or grid
Pole 130 isolates.Described side wall can be by silicon nitride, silicon oxide, silicon oxynitride, carborundum and/or other conjunctions
Suitable material is formed, and described side wall can have multiple structure, and its thickness range is such as about
10nm-100nm。
In OTP parts structure shown in Fig. 4, each gate line 121 and thin gate oxide below, active
District 110 and substrate 100 form an independent storage tube structure, and multiple described storage tube structures composition is described
Thin grid oxygen low pressure memory device, the maximum operation voltage of each described storage tube is 3.3V.Including described grid
The running voltage of the thick grid oxygen HT selector part of pole 130 is more than or equal to the running voltage of this storage tube
1.5 times, according to concrete technology and the design requirement of circuit, can specifically determine that described thick grid oxygen high pressure selects
The size of each several part in device.
OTP parts structure shown in Fig. 4 is programmed, the multiple storages specifically it included
Pipe is programmed, to puncture the thin gate oxide below each gate line 121, usual gate line 121 with
The infall of active area 110 is easiest to produce breakdown point, such as breakdown point and is likely to occur the most multiple
Region pointed by circle 140.Certainly, there is the most breakdown probability or puncture in each described storage tube
Point occurs in the probability of undesirable position, and for each described storage tube, whether breakdown point meets is wanted
The probability asked is relatively independent with storage tube other described, however not excluded that have some described storage tubes cannot detect reading
The situation of electric current.Refer to the circuit structure signal that Fig. 5, Fig. 5 are the OTP parts structures shown in Fig. 4
Figure, consistent with the structure shown in Fig. 4, grid 130 and a plurality of gate line 121 short circuit, multiple described in deposit
Storage pipe is parallel-connection structure.According to this circuit structure, described OTP parts structure carries out after performing programming reading behaviour
Make, for the thin grid oxygen low pressure memory device of multiple described storage tubes composition, only need to wherein have one
Storage tube can detect that read current, described thin grid oxygen low pressure memory device just can detect read current, if
Multiple storage tubes can detect read current, and the most now read current is the read current sum of the plurality of storage tube.
For probability angle, in described thin grid oxygen low pressure memory device, all there is breakdown point in all described storage tubes
Undesirable situation probability is less, and the most correspondingly this thin grid oxygen low pressure memory device can detect read current
Probability is relatively big, and the most described thin grid oxygen low pressure memory device disclosure satisfy that the probability of the demand of read operation is compared
Prior art is bigger, thus can increase the product yield of chip.
It should be noted that the thin grid oxygen low pressure memory device of the OTP parts structure shown in Fig. 4 has bag
Include the interdigitation grid of a plurality of gate line 121, and in Fig. 4, this interdigitation grid only includes 3 gate lines
121, but can not limit with this in thin grid oxygen low pressure memory device of OTP parts structure provided by the present invention
The particular number of the gate line 121 included by described interdigitation grid, usual described interdigitation grid includes
Article at least two, gate line 121.
It will be appreciated by those skilled in the art that the thin grid oxygen low pressure memory device in OTP parts structure includes
In parallel storage tube quantity the most, then this thin grid oxygen low pressure memory device can normally detect when read operation
The biggest to the probability of read current, namely consider to increase the interdigitation grid of thin grid oxygen low pressure memory device
With the cross point of active area 100 to form more described storage tube.Based on this consideration, on the one hand, can
To arrange more gate line 121 in the case of semiconductor fabrication process conditions permit, on the other hand, it is subject to
Chip area limit and process conditions limit, it may be considered that the shape of active area 110 is improved so that
In the cross point increasing described interdigitation grid and active area 110.
Refer to the another embodiment that Fig. 6, Fig. 6 are the OTP parts structures according to the present invention
The front view observed from grid height direction, the OTP parts structure shown in Fig. 6 is in the concrete reality shown in Fig. 4
Execute on the basis of mode the shape to active area 110 to improve, before it each several part included is referred to
The description of relevant portion in the detailed description of the invention shown in explanatory diagram 4 in literary composition, with the tool shown in Fig. 4
Body embodiment difference is: in the detailed description of the invention shown in Fig. 6, and active area 110 is interdigital
Type active area, this interdigitation active area includes the polylith stripe region in polylith stripe region, such as Fig. 6
111, this polylith stripe region 111 is the most arranged in parallel.Typically, each stripe region 111 is along grid
Length direction extends, and polylith stripe region 111 is the most arranged in parallel on grid width direction, and and gate line
The bearing of trend of 121 is orthogonal.Owing to being provided with this polylith stripe region 111, the OTP shown in Fig. 6
Device architecture in the case of not increasing chip area, its thin grid oxygen low pressure memory device included interdigital
Type grid can form more storage tube, specifically gate line 121 with active area 110 and can distinguish
Storage tube, correspondingly, gate line is formed in different positions with its different stripe region 111 covered
The 121 storage tube breakdown points when performing programming constituted with stripe region 111 easily occur in grid 121 with
Region pointed by multiple circles 141 in the infall of stripe region 111, such as Fig. 6.Refer to Fig. 7,
Fig. 7 is the electrical block diagram of the OTP parts structure shown in Fig. 6, in described OTP parts structure
Thin grid oxygen low pressure memory device include a large amount of in parallel storage tubes, described thin grid oxygen low pressure memory device energy
Detect that the probability of read current is bigger.Therefore, for relative to the detailed description of the invention shown in Fig. 4, Fig. 6 is implemented
The detailed description of the invention illustrated can further improving product yield.
Although it is pointed out that in the detailed description of the invention shown in Fig. 4 and Fig. 6, gate line 121 is arranged
For parallel with grid 130, can arrange in more embodiments the bearing of trend of gate line 121 make its with
The bearing of trend of grid 130 is an angle, also can realize the effect of the present invention.
OTP parts structure shown in Fig. 4 and Fig. 6 illustrate only it thin grid oxygen low pressure memory device included
Interdigitation grid one shape, in order to realize the purpose of the present invention, described interdigitation grid can also be arranged
For other shapes.Refer to Fig. 8, Fig. 8 is that another of OTP parts structure according to the present invention is embodied as
The front view that mode is observed from grid height direction, is with the difference of the detailed description of the invention shown in Fig. 4:
The interdigitation grid of the thin grid oxygen low pressure memory device in the OTP parts structure shown in Fig. 8 includes a plurality of grid
Line 122 and main grid 123, wherein this plurality of gate line 122 is connected with described main grid 123 and prolongs along grid length direction
Stretch, it is preferable that main grid 123 is parallel with the grid 130 of thick grid oxygen HT selector part, prolonging of gate line 122
Stretch direction vertical with the bearing of trend of main grid 123, this plurality of gate line parallel discretely on grid width direction
Row.Typically, the described gate line 122 width range on grid width direction is 5nm to 5 μm, described many
In bar gate line 122, between adjacent pair gate line 122, the scope of the distance on grid width direction is 5nm
To 5 μm.A plurality of gate line 122 is shorted together by main grid 123, each gate line 122 and dependent part thereof
Divide and be likely to constitute storage tube with active area 110.In the OTP parts structure that this detailed description of the invention provides
In, substrate 100, active area 110 and the grids 130 etc. that it includes are referred to retouching of hereinbefore relevant portion
State, do not repeat them here.
The infall of each gate line 122 and active area 110 is easily formed in breakdown point, such as Fig. 8 and shows
The region pointed by multiple circles 142 gone out.Correspondingly refer to Fig. 9, Fig. 9 is the OTP shown in Fig. 8
The electrical block diagram of device architecture, the thin grid oxygen low pressure memory device of this OTP parts structure wraps equally
Including multiple storage tube, its operation principle is referred to the description to the circuit structure shown in Fig. 4.
Further, in order to increase gate line 122 with the cross point of active area 110 so that formed more also
The storage tube of connection, the shape that can improve active area 110 makes this active area 110 become interdigitation active area,
Polylith stripe region in this interdigitation active area, this polylith stripe region is the most arranged in parallel.Described many
Block stripe region specifically arrange position meet compare the active area 110 shown in Fig. 8 can be with gate line 122 shape
Become more cross point.
On the other hand, present invention also offers another kind of OTP parts structure, this OTP parts includes:
Substrate 100；
Form thin grid oxygen low pressure memory device over the substrate and thick grid oxygen HT selector part；
Described thin grid oxygen low pressure memory device includes the interdigitation active area 110 being formed among described substrate,
And cover the thin gate oxide on described interdigitation active area 110 and grid 120, wherein said fork
Including polylith stripe region 111 in finger-type active area 110, this polylith stripe region 111 is prolonged along grid length direction
Stretch.
Although it will be appreciated by those skilled in the art that described thin gate oxide is not shown in FIG. 4, but should
Thin gate oxide covers on interdigitation active area 112, and be arranged on described grid 120 and substrate 100 it
Between.Additionally, in OTP parts structure illustrated in fig. 4, described thick grid oxygen HT selector part by substrate 100,
It is formed at the interdigitation active area 112 among described substrate, thick grating oxide layer and grid 130 to constitute, wherein
The arrangement of each several part refers to prior art, does not repeats them here.Similarly, although Fig. 4 does not shows
Go out described thick grating oxide layer, but skilled artisan would appreciate that this thick grating oxide layer covers at substrate 100
On, and be arranged between grid 130 and substrate 100.
Substrate 100 includes silicon substrate (such as wafer).(such as p-type is required according to design known in the art
Substrate or N-type substrate), substrate 100 can include various doping configuration.Substrate 201 in other embodiments
Other basic quasiconductors, such as germanium can also be included.Or, substrate 100 can include compound semiconductor,
Such as carborundum, GaAs, indium arsenide or indium phosphide.In the present embodiment, substrate 100 is silicon substrate.
Typically, the thickness of substrate 100 can be but not limited to the most hundreds of micron, such as can be in 400 μm
In the thickness range of-800 μm.In an alternate embodiment of the invention, substrate 100 can form isolation area, such as
STI isolation area, on OTP parts structure and the described substrate 100 that will provide in this detailed description of the invention its
His device isolation, the material of described isolation area is insulant, such as, can use SiO2Or Si3N4, and
The width of described isolation area can regard the design requirement of semiconductor structure and determine.
Described interdigitation active area 112 can be formed by the method for ion implanting, described ion implanting miscellaneous
Matter type is consistent with type of device.That is, if device is NMOS, then the dopant type of ion implanting is N
Type；If device is PMOS, then the dopant type of ion implanting is p-type.
The material of described thin gate oxide and described thick grating oxide layer can be thermal oxide layer, including silicon oxide
Or silicon oxynitride, it is possible to for high K dielectric, such as HfO2、HfSiO、HfSiON、HfTaO、HfTiO、
HfZrO、Al2O3、La2O3、ZrO2, one in LaAlO or a combination thereof, described thin gate oxide and
The thickness of described thick grating oxide layer is relevant with the design requirement of described OTP parts structure, and specifically, this is concrete
The thickness of the described thin gate oxide mentioned in embodiment is less than or equal to 5 nanometers, described thick grid oxygen high pressure choosing
The thickness of the thick grating oxide layer selecting device is more than or equal to 1.5 times of the thickness of described thin gate oxide.
In this embodiment, described polylith stripe region 111 parallel discretely on grid width direction
Row, it is preferable that the stripe region 111 width range on grid width direction is 5nm to 5 μm, polylith strip
In region 111 between adjacent pair stripe region 111 scope of the distance on grid width direction be 5nm extremely
5μm.The grid length of grid 130 is more than or equal to 1.5 times of the gate line 120 width on grid length direction.
In an alternate embodiment of the invention, the sidewall of described gate line 121 and/or grid 130 can be formed around these grid
The side wall (not shown) of polar curve 120 and/or grid 130, this side wall is for by grid 120 and/or grid
Pole 130 isolates.Described side wall can be by silicon nitride, silicon oxide, silicon oxynitride, carborundum and/or other conjunctions
Suitable material is formed, and described side wall can have multiple structure, and its thickness range is such as about
10nm-100nm。
In OTP parts structure shown in Figure 10, grid 120 and thin gate oxide below, stripe region
111 and substrate 100 form an independent storage tube structure, multiple described storage tube structures composition is described thin
Grid oxygen low pressure memory device, the maximum operation voltage of each described storage tube is 3.3V.Including described grid
The running voltage of the thick grid oxygen HT selector part of 130 is more than or equal to the 1.5 of the running voltage of this storage tube
Times, according to concrete technology and the design requirement of circuit, can specifically determine described thick grid oxygen HT selector
The size of each several part in part.
OTP parts structure shown in Figure 10 is programmed, the multiple storage tubes specifically it included
It is programmed, to puncture the thin gate oxide below grid 120, usual gate line 120 and stripe region 111
Infall be easiest to produce breakdown point, such as breakdown point be likely to occur the most multiple circle 143 indication
The region gone out.Certainly, there is the most breakdown probability in each described storage tube or breakdown point occurs in and pays no attention to
Thinking the probability of position, for each described storage tube, whether breakdown point meets the probability and its required
His described storage tube is relatively independent, however not excluded that have some described storage tubes cannot detect the situation of read current.
Refer to the electrical block diagram that Figure 11, Figure 11 are the OTP parts structures shown in Figure 10, illustrate with Figure 10
Structure consistent, grid 120 can be formed at diverse location with different stripe region 111 respectively described in deposit
Chu Guan, multiple described storage tubes are parallel-connection structures.According to this circuit structure, described OTP parts structure performs
Read operation is carried out after programming, for the thin grid oxygen low pressure memory device of multiple described storage tubes composition,
Read current, described thin grid oxygen low pressure memory device just can be examined only need to wherein to have a storage tube to detect
Measuring read current, if multiple storage tube can detect read current, the most now read current is the plurality of storage
The read current sum of pipe.For probability angle, all in described thin grid oxygen low pressure memory device described in deposit
Storage pipe all occurs that the undesirable situation probability of breakdown point is less, the most correspondingly this thin grid oxygen low pressure memory device
Can detect that the probability of read current is relatively big, the most described thin grid oxygen low pressure memory device disclosure satisfy that read operation
The probability of demand bigger, thus can increase the product yield of chip.
Include it should be noted that the thin grid oxygen low pressure memory device of the OTP parts structure shown in Figure 10 has
The interdigitation active area 112 of polylith stripe region 111, and in Figure 10, this interdigitation active area 112 only includes 3
Block stripe region 111, but the thin grid oxygen low pressure of OTP parts structure provided by the present invention can not be limited with this
The particular number of stripe region 111 included in interdigitation active area described in memory device, generally described
Interdigitation active area 112 includes at least two pieces of stripe region 111.
Preferably, it is contemplated that increase the cross point of grid 120 and interdigitation active area 110 so that being formed
More described storage tube, can be interdigital as shown in Fig. 4 or Fig. 6 by the improved shape of grid 120
Type grid.Refer to the reality the most concrete that Figure 12, Figure 12 are the OTP parts structures shown in Figure 10
Executing the front view that mode is observed from grid height direction, compared with the OTP shown in Figure 10, its difference is:
Grid 120 is improved to interdigitation grid, and this interdigitation grid includes a plurality of gate line 121, these a plurality of grid
Polar curve 121 is the most arranged in parallel on grid length direction.Gate line 121 intersects with stripe region 111
Place is easiest to puncture, such as region pointed by multiple circles 144 in Figure 12.Shown in Figure 12
Circuit structure and the operation principle thereof of the OTP parts structure that detailed description of the invention is provided are referred to above
In for the description of Fig. 7, do not repeat them here.
Further, refer to the structural representation that Figure 13, Figure 13 are the OTP memory structure according to the present invention,
This OTP memory structure includes:
At least one memory element 211；
The multiple redundant storage units 221 corresponding with each described memory element 211；
Described memory element 211 and described redundant storage unit 221 include as hereinbefore Fig. 4 to Figure 12 is arbitrary
The OTP parts structure that item is provided；
The plurality of redundant storage unit 221, for after detecting described memory element 211 program fail
The plurality of redundant storage unit 221 order is performed redundancy programming, until detecting current redundant storage list
Unit 221 stops the programming of described redundancy after programming successfully.
Alternatively, described memory element 211 is arranged in OTP storage array 210, the plurality of redundant storage
Unit is separately positioned in different OTP redundant storage arrays 220.
Preferably, the OTP memory structure shown in Figure 13 such as includes OTP storage array 210, Yi Jiyong
In described redundancy program tactic No. 1 to n OTP redundant storage array 220, wherein OTP storage
Array 210 is completely the same with the structure of described redundant storage array 220, memory element 211 e.g. this OTP
M unit in storage array, multiple redundant storage units 221 of its correspondence are described redundancy the most respectively
M unit in the OTP redundant storage array that memory element 221 is belonged to.To memory element 211
After performing programming and detecting described program fail, next step selects from described n OTP redundant storage array 220
The m redundant storage unit 221 selected in No. 1 OTP redundant storage array 220 performs described redundancy volume to it
Journey, and it is the most successful to detect the programming of this redundancy, if success, stops the programming of described redundancy, if failure, continues
Continue and select in No. 2 OTP redundant storage arrays 220 to n OTP redundant storage array 220 from described No. 1
M redundant storage 221 performs redundancy programming to it, and the programming of this redundancy of duplicate detection is the most successful
Step, once detect that described redundancy programs successfully, stops the programming of this redundancy.The principle of this redundancy programming
At least several can the redundant storage unit of alternately programming object to be i.e. to ensure that memory element 211
221。
When the memory element 211 in OTP storage array 210 is carried out read operation, read current is memory element
211 and correspondence multiple executeds described in the read current sum of redundant storage unit 221 of redundancy programming.
In reality is implemented, the numerical values recited of n can be rationally set, to ensure that memory element 211 can detect
The probability of read current is in tolerance interval.
Although being described in detail about example embodiment and advantage thereof, it should be understood that without departing from the present invention
Spiritual and defined in the appended claims protection domain in the case of, these embodiments can be carried out respectively
Plant change, substitutions and modifications.For other examples, those of ordinary skill in the art it should be readily appreciated that
While keeping in scope, the order of processing step can change.
The OTP parts structure that the present invention provides improves the active of it thin grid oxygen low pressure memory device included
District's shape and/or gate shapes, from circuit structure, the thin grid oxygen low pressure memorizer with prior art
Part only has a storage tube and compares, and the thin grid oxygen low pressure memory device after this improvement has multiple parallel connection
Storage tube, first, the storage tube of the plurality of parallel connection has relatively independent breakdown probability and breakdown point distribution
Location probability, namely after meaning to be programmed the plurality of storage tube, compiling all occurs in all of storage tube
The probability that journey is failed is less, can be greatly increased the probability that read current can be detected；Further, arranging should
Multiple storage tubes can improve read current, makes the read current of OTP parts structure be more easily detected.
Additionally, the OTP memory structure that the present invention provides employs the OTP parts structure conduct that the present invention provides
Memory element and redundant storage unit, wherein said redundant storage unit is used as to tackle described memory element and compiles
Later programmed is carried out, with the OTP ensured in OTP memory structure on programmed logic in the case of journey failure
Memory element can detect read current.
To sum up, the OTP parts structure of present invention offer and OTP memory structure, all improve the product of chip
Yield.
The range of application of the present invention be not limited to the technique of the specific embodiment described in description, mechanism,
Manufacture, material composition, means, method and step.From the disclosure, as this area
Those of ordinary skill will readily appreciate that, for the technique having existed at present or will having developed later,
Mechanism, manufacture, material composition, means, method or step, wherein they perform and present invention description
Function that corresponding embodiment is substantially the same or the result that acquisition is substantially the same, can be to it according to the present invention
Apply.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, thing
Matter composition, means, method or step are included in its protection domain.
Claims (15)
1. an OTP parts structure, this OTP parts structure includes:
Substrate；
Form thin grid oxygen low pressure memory device over the substrate and thick grid oxygen HT selector part；
Described thin grid oxygen low pressure memory device includes being formed at the active area among described substrate, and covers
Thin gate oxide on described active area and interdigitation grid, wherein said interdigitation grid includes a plurality of grid
Polar curve, described active area is interdigitation active area, includes polylith stripe region in this interdigitation active area, should
Polylith stripe region is the most arranged in parallel, and described gate line intersects with described stripe region.
OTP parts structure the most according to claim 1, wherein:
Described interdigitation grid also includes main grid；
Described a plurality of gate line is connected with described main grid and extends along grid length direction.
OTP parts structure the most according to claim 2, wherein:
Described a plurality of gate line is the most arranged in parallel on grid width direction.
OTP parts structure the most according to claim 3, wherein:
Described gate line width range on grid width direction is 5nm to 5 μm.
OTP parts structure the most according to claim 3, wherein:
In described a plurality of gate line, between adjacent pair gate line, the scope of the distance on grid width direction is
5nm to 5 μm.
OTP parts structure the most according to claim 1, wherein:
Described a plurality of gate line is the most arranged in parallel on grid length direction.
OTP parts structure the most according to claim 6, wherein:
Described gate line width range on grid length direction is 5nm to 5 μm.
OTP parts structure the most according to claim 6, wherein:
In described a plurality of gate line, between adjacent pair gate line, the scope of the distance on grid length direction is
5nm to 5 μm.
9. an OTP parts structure, this OTP parts includes:
Substrate；
Form thin grid oxygen low pressure memory device over the substrate and thick grid oxygen HT selector part；
Described thin grid oxygen low pressure memory device includes the interdigitation active area being formed among described substrate, and
Cover the thin gate oxide on described interdigitation active area and grid, in wherein said interdigitation active area
Including polylith stripe region, this polylith stripe region extends along grid length direction, described grid and described strip district
Territory intersects.
OTP parts structure the most according to claim 9, wherein:
Described polylith stripe region is the most arranged in parallel on grid width direction.
11. OTP parts structures according to claim 10, wherein:
Described stripe region width range on grid width direction is 5nm to 5 μm.
12. OTP parts structures according to claim 10, wherein:
The model of the distance on grid width direction between adjacent pair stripe region in described polylith stripe region
Enclosing is 5nm to 5 μm.
13. according to the OTP parts structure described in any one of claim 9 to 12, wherein:
Described grid is interdigitation grid, and this interdigitation grid includes a plurality of gate line, and this plurality of gate line exists
On grid length direction the most arranged in parallel.
14. 1 kinds of OTP memory structure, this OTP memory structure includes:
At least one memory element；
The multiple redundant storage units corresponding with each described memory element；
Described memory element and described redundant storage unit include as described in any one of claim 1 to 13
OTP parts structure；
The plurality of redundant storage unit, is used for after detecting described memory element program fail the plurality of
Redundant storage unit order performs redundancy programming, until after detecting that current redundant storage unit programs successfully
Stop the programming of described redundancy.
15. OTP memory structure according to claim 14, wherein:
Described memory element is arranged in OTP storage array；
The plurality of redundant storage unit is separately positioned in different OTP redundant storage arrays.
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| CN109859793B (en) * | 2019-03-07 | 2021-02-23 | 珠海创飞芯科技有限公司 | Multi-threshold OTP memory cell and control method |
| CN111916137A (en) * | 2020-08-05 | 2020-11-10 | 珠海创飞芯科技有限公司 | OTP memory cell and OTP memory array device |
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| CN101834187A (en) * | 2010-04-13 | 2010-09-15 | 北京大学 | Embedded non-volatile memory |
| CN101521190B (en) * | 2008-02-20 | 2012-06-20 | 美格纳半导体有限会社 | Anti-fuse and method for forming the same, unit cell of nonvolatile memory device with the same |
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