CN103745977A - OTP (One Time Programmable) device structure and processing method thereof - Google Patents
OTP (One Time Programmable) device structure and processing method thereof Download PDFInfo
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Abstract
The invention provides an OTP (One Time Programmable) device structure, the OTP device structure comprises a substrate, a thin-gate oxide low-voltage memory device and a thick-gate oxide high-voltage selecting device; the thin-gate oxide low-voltage memory device and the thick-gate oxide high-voltage selecting device are formed on the substrate; the thin-gate oxide low-voltage memory device comprises an active area, a thin gate oxide layer and an interdigital gate, the active area is formed in the substrate and covered by the thin gate oxide layer and the interdigital gate, wherein the interdigital gate comprises a plurality of gate lines. An OTP device structure comprises a substrate, a thin-gate oxide low-voltage memory device and a thick-gate oxide high-voltage selecting device; the thin-gate oxide low-voltage memory device and the thick-gate oxide high-voltage selecting device are formed on the substrate; the thin-gate oxide low-voltage memory device comprises an interdigital active area, a thin gate oxide layer and a gate, the interdigital active area is formed in the substrate and covered by the thin gate oxide layer and the gate, wherein the interdigital active area comprises a plurality of strip-shaped areas, which are extended along the gate length direction. The invention also provides an OTP memory structure.
Description
Technical field
The design manufacture field that the present invention relates to semiconductor device, relates in particular to OTP parts structure and processing method thereof.
Background technology
In embedded non-volatile memory field, disposable programmable based on anti-fuse structures (One Time Programmable, OTP) memory, because of its high stability,, the programme advantage such as easy completely compatible with CMOS technique, is widely used in analog circuit fine setting, key and chip id storage, SRAM/DRAM Redundancy Design, RFID etc.At present, the anti-fuse structures of main flow is used metal-oxide-semiconductor to realize.Please refer to Fig. 1, structure shown in Fig. 1 is the sectional structure schematic diagram of the OTP parts structure of prior art, this OTP parts structure is comprised of thin grid oxygen low pressure memory device and thick grid oxygen HT selector part, as shown in Figure 1, wherein thin grid oxygen low pressure memory device consists of substrate 1, thin gate oxide 4, grid 3 and the active area 2 that is formed in substrate 1, correspondingly, thick grid oxygen HT selector part consists of substrate 1, thick grating oxide layer 6, grid 5 and active area 2.The circuit structure of this OTP parts structure please refer to Fig. 2, when this OTP parts structure is carried out to programming, high pressure is added in to grid 3 and the active area 2 of described thin grid oxygen low pressure memory device, the 0.18 μ m technique of take is example, making alive WL0=8V on grid 3, making alive BL0=0V on active area 2, after a period of time, thin gate oxide 4 is forever punctured.
Continuation is with reference to figure 1, for thin grid oxygen low pressure memory device, to its caused breakdown point of programming, may be distributed in 3 regions, the LDD(Lightly Doped Drain of grid illustrated in fig. 13 and active area 2 infalls for example, lightly doped drain) district 7, or the channel region 8 of thin gate oxide 4 belows, or LDD district 7 and channel region 8 Halo transition region between the two.For read operation, when breakdown point is positioned at LDD district 7, read current is larger; When breakdown point is positioned at channel region 8, read current is moderate; If breakdown point is positioned at described Halo transition region, because the doping content in this region is higher than substrate, so there is more high threshold voltage, therefore need the higher voltage could transoid, so read current is less and be not easy to be detected.Thin grid oxygen low pressure memory device is carried out after programming, if breakdown point appears at, in described Halo transition region, easily caused this thin grid oxygen low pressure memory device program fail, thereby reduce the product yield of OTP parts structure.From the circuit structure shown in Fig. 2, breakdown point appears at the thin grid oxygen low pressure memory device that described Halo transition region can be considered as wherein and is blocked and read current cannot be detected.
As shown in Figure 3, Fig. 3 is the front view that the OTP parts structure shown in Fig. 1 is observed from the high direction of grid, the possibility that common breakdown point is positioned at LDD district 7 is larger, grid 3 is the weakest regions that the most easily puncture with active area 2 infalls, the shown position of a plurality of circles 11 in Fig. 3 for example, certainly breakdown point also has certain probability to appear at described Halo transition region or aforementioned channel region 8, but not the shown position of a plurality of circles 11 in Fig. 3, from the convenient angle detecting of read current, consider, in ideal situation, after being carried out to programming, described thin grid oxygen low pressure memory device expects that breakdown point is to be positioned at LDD district 7.
On the whole, existing otp memory part is due to the uncontrollable product yield that affects this OTP parts structure in appearance position of breakdown point.
Summary of the invention
The object of the invention is to for solving problems of the prior art, by providing novel OTP parts structure to promote the yield of OTP parts.
On the one hand, the invention provides a kind of OTP parts structure, this OTP parts structure comprises:
Substrate;
Be formed on thin grid oxygen low pressure memory device and thick grid oxygen HT selector part on described substrate;
Described thin grid oxygen low pressure memory device comprises the active area being formed among described substrate, and covers thin gate oxide and the interdigitation grid on described active area, and wherein said interdigitation grid comprises many gate lines.
According to one embodiment of present invention, in this OTP parts structure: described interdigitation grid also comprises main grid, described many gate lines are connected with described main grid and extend along grid length direction.
According to one embodiment of present invention, in this OTP parts structure: described many gate lines are arranged in parallel discretely in grid width direction.
According to one embodiment of present invention, in this OTP parts structure: the width range of described gate line in grid width direction is 5nm to 5 μ m.
According to one embodiment of present invention, in this OTP parts structure: in described many gate lines, between adjacent pair of grid lines, the scope of the distance in grid width direction is 5nm to 5 μ m.
According to one embodiment of present invention, in this OTP parts structure: described many gate lines are arranged in parallel discretely on grid length direction.
According to one embodiment of present invention, in this OTP parts structure: the width range of described gate line on grid length direction is 5nm to 5 μ m.
According to one embodiment of present invention, in this OTP parts structure: in described many gate lines, between adjacent pair of grid lines, the scope of the distance on grid length direction is 5nm to 5 μ m.
According to one embodiment of present invention, in this OTP parts structure: described active area is interdigitation active area, in this interdigitation active area, comprise polylith stripe region, this polylith stripe region is arranged in parallel discretely.
On the other hand, the invention provides a kind of OTP parts structure, this OTP parts comprises:
Substrate;
Be formed on thin grid oxygen low pressure memory device and thick grid oxygen HT selector part on described substrate;
Described thin grid oxygen low pressure memory device comprises the interdigitation active area being formed among described substrate, and cover thin gate oxide and the grid on described interdigitation active area, wherein said interdigitation comprises polylith stripe region in active area, and this polylith stripe region is extended along grid length direction.
According to one embodiment of present invention, in this OTP parts structure: described polylith stripe region is arranged in parallel discretely in grid width direction.
According to one embodiment of present invention, in this OTP parts structure: the width range of described stripe region in grid width direction is 5nm to 5 μ m.
According to one embodiment of present invention, in this OTP parts structure: in described polylith stripe region, between adjacent a pair of stripe region, the scope of the distance in grid width direction is 5nm to 5 μ m.
According to one embodiment of present invention, in this OTP parts structure: described grid is interdigitation grid, this interdigitation grid comprises many gate lines, and these many gate lines are arranged in parallel discretely on grid length direction.
Another aspect, the present invention also provides a kind of OTP storage organization, and this OTP storage organization comprises:
At least one memory cell;
A plurality of redundant storage units corresponding with memory cell described in each;
Described memory cell and described redundant storage unit comprise described any OTP parts structure above;
Described a plurality of redundant storage unit, for after detecting described memory cell program fail, the plurality of redundant storage unit sequentially being carried out to redundancy programming, stops described redundancy after current redundant storage unit programme successfully and programmes until detect.
According to one embodiment of present invention, in this OTP storage organization: described memory cell is arranged in OTP storage array; Described a plurality of redundant storage unit is separately positioned in different OTP redundant storage arrays.
OTP parts architecture advances provided by the invention active area shape and/or the gate shapes of it thin grid oxygen low pressure memory device comprising, from circuit structure, only having a storage tube with thin grid oxygen low pressure memory device in prior art compares, thin grid oxygen low pressure memory device after this improvement has the storage tube of a plurality of parallel connections, first, the storage tube of the plurality of parallel connection has relatively independent breakdown probability and breakdown point distributing position probability, also after meaning the plurality of storage tube being programmed, all storage tubes all occur that the probability of program fail is less, can greatly increase the probability that read current can be detected, further, the plurality of storage tube is set and can improves read current, the read current of OTP parts structure is more easily detected.
In addition, OTP storage organization provided by the invention has been used OTP parts structure provided by the invention as memory cell and redundant storage unit, in the situation of wherein said redundant storage unit as the described memory cell program fail of reply, carry out later programmed, to guarantee that the OTP memory cell in OTP storage organization can detect read current on programmed logic.
To sum up, OTP parts structure provided by the invention and OTP storage organization, all promoted the product yield of chip.
Accompanying drawing explanation
By reading the detailed description that non-limiting example is done of doing with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 is the sectional structure schematic diagram of the OTP parts structure of prior art;
Fig. 2 is the corresponding electrical block diagram of OTP parts structure shown in Fig. 1;
Fig. 3 is the front view that the OTP parts structure shown in Fig. 1 is observed from the high direction of grid;
Fig. 4 is the front view of observing from the high direction of grid according to OTP parts structure of the present invention embodiment;
Fig. 5 is the electrical block diagram of the OTP parts structure shown in Fig. 4;
Fig. 6 is the front view of observing from the high direction of grid according to another embodiment of OTP parts structure of the present invention;
Fig. 7 is the electrical block diagram of the OTP parts structure shown in Fig. 6;
Fig. 8 is the front view of observing from the high direction of grid according to another embodiment of OTP parts structure of the present invention;
Fig. 9 is the electrical block diagram of the OTP parts structure shown in Fig. 8;
Figure 10 is the front view of observing from the high direction of grid according to another OTP parts structure of the present invention embodiment;
Figure 11 is the schematic diagram of the circuit structure of the OTP parts structure shown in Figure 10;
Figure 12 is the front view that a preferred embodiment of the OTP parts structure shown in Figure 10 is observed from the high direction of grid;
Figure 13 is according to the structural representation of OTP storage organization of the present invention.
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiments of the invention are described in detail.
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, only for explaining the present invention, and can not be interpreted as limitation of the present invention.Equally, in the sectional structure schematic diagram shown in accompanying drawing, each several part is not drawn in strict accordance with actual size, and has been only schematically effect.
Disclosing below provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and object clearly, itself do not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique the invention provides and the example of material, but those of ordinary skills can recognize the property of can be applicable to of other techniques and/or the use of other materials.In addition, First Characteristic described below Second Characteristic it " on " structure can comprise that the first and second Characteristics creations are for the direct embodiment of contact, also can comprise the embodiment of other Characteristics creation between the first and second features, such the first and second features may not be direct contacts.
Please refer to Fig. 4, Fig. 4 is the front view of observing from the high direction of grid according to OTP parts structure of the present invention embodiment, and this OTP parts structure comprises:
Be formed on thin grid oxygen low pressure memory device and thick grid oxygen HT selector part on described substrate;
Described thin grid oxygen low pressure memory device comprises the active area 110 being formed among described substrate, and covers thin gate oxide and the interdigitation grid on described active area, and wherein said interdigitation grid comprises many gate lines 121.
Those skilled in the art are to be understood that, although described thin gate oxide is not shown in Figure 4, but this thin gate oxide covers on active area 110, and between described interdigitation grid and substrate 100, between each gate line 121 and substrate 100, described thin gate oxide is all set.In addition, in OTP parts structure illustrated in fig. 4, described thick grid oxygen HT selector part consists of substrate 100, the active area 110, thick grating oxide layer and the grid 130 that are formed among described substrate, and wherein the arrangement of each several part can, with reference to prior art, not repeat them here.Similarly, although not shown described thick grating oxide layer in Fig. 4, those skilled in the art are to be understood that this thick grating oxide layer covers on substrate 100, and are arranged between grid 130 and substrate 100.
Described active area 110 can form by the method for Implantation, and the dopant type of described Implantation is consistent with type of device.That is,, if device is NMOS, the dopant type of Implantation is N-type; If device is PMOS, the dopant type of Implantation is P type.
The material of described thin gate oxide and described thick grating oxide layer can be thermal oxide layer, comprises silica or silicon oxynitride, also can be high K dielectric, for example HfO
2, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, Al
2o
3, La
2o
3, ZrO
2, a kind of or its combination in LaAlO, the thickness of described thin gate oxide and described thick grating oxide layer is relevant with the design requirement of described OTP parts structure, particularly, the thickness of the described thin gate oxide of mentioning in this specific embodiment is less than or equal to 5 nanometers, and the thickness of the thick grating oxide layer of described thick grid oxygen HT selector part is more than or equal to 1.5 times of thickness of described thin gate oxide.
In this embodiment, described many gate lines 121 are arranged in parallel discretely on grid length direction, and one end of these many gate lines 121 is shorted together, and each gate line 121 be take short circuit point as the initial opposite side extension along grid width direction to substrate.These many gate lines 121 and short circuit parallel with the grid 130 of thick grid oxygen HT selector part also simultaneously.Preferably, the width range of each gate line 121 on grid length direction is 5nm to 5 μ m, and in described many gate lines 121, between adjacent pair of grid lines 121, the scope of the distance on grid length direction is 5nm to 5 μ m.The grid length of grid 130 is more than or equal to 1.5 times of the width of gate line 121 on grid length direction.
In optional embodiment, the sidewall of described gate line 121 and/or grid 130 can form around the side wall (not shown) of this gate line 121 and/or grid 130, and this side wall is for isolating grid 121 and/or grid 130.Described side wall can be formed by silicon nitride, silica, silicon oxynitride, carborundum and/or other suitable materials, and described side wall can have sandwich construction, and its thickness range is approximately for example 10nm-100nm.
In OTP parts structure shown in Fig. 4, each gate line 121 forms an independently storage tube structure with thin gate oxide, active area 110 and the substrate 100 of its below, a plurality of described storage tube structures form described thin grid oxygen low pressure memory device, and described in each, the maximum operation voltage of storage tube is 3.3V.The operating voltage that comprises the thick grid oxygen HT selector part of described grid 130 is more than or equal to 1.5 times of operating voltage of this storage tube, according to the design requirement of concrete technology and circuit, can specifically determine the size of each several part in described thick grid oxygen HT selector part.
OTP parts structure shown in Fig. 4 is programmed, a plurality of storage tubes that specifically it comprised are programmed, to puncture the thin gate oxide of each gate line 121 below, conventionally gate line 121 the most easily produces breakdown point with the infall of active area 110, and for example breakdown point may appear at the pointed region of a plurality of circles 140 in Fig. 4.Certainly, described in each there is the probability that not breakdown probability or breakdown point appear at undesirable position in storage tube, for storage tube described in each, the probability whether breakdown point meets the demands and described in other storage tube relatively independent, do not get rid of the situation that has storage tube described in some cannot detect read current.Please refer to Fig. 5, Fig. 5 is the electrical block diagram of the OTP parts structure shown in Fig. 4, consistent with the structure shown in Fig. 4, grid 130 and many gate line 121 short circuits, and a plurality of described storage tubes are parallel-connection structures.According to this circuit structure, described OTP parts structure is carried out read operation after carrying out programming, for the thin grid oxygen low pressure memory device forming for a plurality of described storage tubes, only need wherein there is a storage tube read current can be detected, described thin grid oxygen low pressure memory device just can detect read current, if a plurality of storage tubes can detect read current, now read current is the read current sum of the plurality of storage tube.With regard to probability angle, in described thin grid oxygen low pressure memory device, all described storage tubes all occur that the undesirable situation probability of breakdown point is less, the probability that correspondingly this thin grid oxygen low pressure memory device can detect read current is larger, therefore can to meet the probability of demand of read operation larger compared to existing technology for described thin grid oxygen low pressure memory device, can increase thus the product yield of chip.
It should be noted that, the thin grid oxygen low pressure memory device of the OTP parts structure shown in Fig. 4 has the interdigitation grid that comprises many gate lines 121, and in Fig. 4, this interdigitation grid only comprises 3 gate lines 121, but the concrete quantity that can not limit the included gate line 121 of interdigitation grid described in the thin grid oxygen low pressure memory device of OTP parts structure provided by the present invention with this, common described interdigitation grid comprises at least two gate lines 121.
Those skilled in the art are to be understood that, the storage tube quantity in parallel that thin grid oxygen low pressure memory device in OTP parts structure comprises is more, the probability that this thin grid oxygen low pressure memory device can normally detect read current when read operation is also just larger, also considers to increase the interdigitation grid of thin grid oxygen low pressure memory device and the crosspoint of active area 100 to form more described storage tube.Based on this consideration, on the one hand, more gate line 121 can be set the in the situation that of semiconductor fabrication process conditions permit, on the other hand, limited by chip area restriction and process conditions, can consider the shape of active area 110 to improve so that increase the crosspoint of described interdigitation grid and active area 110.
Please refer to Fig. 6, Fig. 6 is the front view of observing from the high direction of grid according to another embodiment of OTP parts structure of the present invention, OTP parts structure shown in Fig. 6 is on the basis of the embodiment shown in Fig. 4, the shape of active area 110 to be improved, it each several part comprising can with reference in above for the description of the embodiment relevant portion shown in key diagram 4, be with the embodiment difference shown in Fig. 4: in the embodiment shown in Fig. 6, active area 110 is interdigitation active areas, this interdigitation active area comprises polylith stripe region, the polylith stripe region 111 in Fig. 6 for example, this polylith stripe region 111 is arranged in parallel discretely.Typically, each stripe region 111 is extended along grid length direction, and polylith stripe region 111 is arranged in parallel discretely in grid width direction, and orthogonal with the bearing of trend of gate line 121.Owing to being provided with this polylith stripe region 111, OTP parts structure shown in Fig. 6 is not in the situation that increasing chip area, the interdigitation grid of the thin grid oxygen low pressure memory device that it comprises can form more storage tube with active area 110, specifically gate line 121 can form storage tube with the different stripe region 111 of its covering in different positions respectively, correspondingly, storage tube breakdown point when carrying out programming that gate line 121 and stripe region 111 form easily appears at the infall of grid 121 and stripe region 111, the pointed region of a plurality of circles 141 in Fig. 6 for example.Please refer to Fig. 7, Fig. 7 is the electrical block diagram of the OTP parts structure shown in Fig. 6, and the thin grid oxygen low pressure memory device in described OTP parts structure comprises the storage tube of a large amount of parallel connections, and the probability that described thin grid oxygen low pressure memory device can detect read current is larger.Embodiment shown in therefore relative Fig. 4, implements further improving product yield of the embodiment shown in Fig. 6.
It is to be noted, although Fig. 4 is set to parallel with grid 130 with gate line 121 in the embodiment shown in Fig. 6, the bearing of trend that gate line 121 can be set in more embodiment makes the bearing of trend of itself and grid 130 be an angle, also can realize effect of the present invention.
OTP parts structure shown in Fig. 4 and Fig. 6 only shows a kind of shape of interdigitation grid of it thin grid oxygen low pressure memory device comprising, in order to realize object of the present invention, described interdigitation grid can also be set to other shapes.Please refer to Fig. 8, Fig. 8 is the front view of observing from the high direction of grid according to another embodiment of OTP parts structure of the present invention, be with the difference of the embodiment shown in Fig. 4: the interdigitation grid of the thin grid oxygen low pressure memory device in the OTP parts structure shown in Fig. 8 comprises many gate lines 122 and main grid 123, wherein these many gate lines 122 are connected with described main grid 123 and extend along grid length direction, preferably, main grid 123 is parallel with the grid 130 of thick grid oxygen HT selector part, the bearing of trend of gate line 122 is vertical with the bearing of trend of main grid 123, these many gate lines are arranged in parallel discretely in grid width direction.Typically, the width range of described gate line 122 in grid width direction is 5nm to 5 μ m, and in described many gate lines 122, between adjacent pair of grid lines 122, the scope of the distance in grid width direction is 5nm to 5 μ m.Many gate line 122 is shorted together by main grid 123, and each gate line 122 and relevant portion thereof all likely form storage tube with active area 110.In the OTP parts structure providing in this embodiment, it substrate comprising 100, active area 110 and grid 130 etc. can, with reference to the description of middle relevant portion above, not repeat them here.
Each gate line 122 easily forms breakdown point with the infall of active area 110, and example is the pointed region of a plurality of circles 142 as shown in Figure 8.Correspondingly please refer to Fig. 9, Fig. 9 is the electrical block diagram of the OTP parts structure shown in Fig. 8, and the thin grid oxygen low pressure memory device of this OTP parts structure comprises a plurality of storage tubes equally, and its operation principle can be with reference to the description to the circuit structure shown in Fig. 4.
Further, for increase gate line 122 with the crosspoint of active area 110 so that form the more storage tube of multi-parallel, the shape that can improve active area 110 makes this active area 110 become interdigitation active area, polylith stripe region in this interdigitation active area, this polylith stripe region is arranged in parallel discretely.The concrete setting position of described polylith stripe region meets to be compared the active area 110 shown in Fig. 8 and can form more crosspoints with gate line 122.
On the other hand, the present invention also provides another kind of OTP parts structure, and this OTP parts comprises:
Be formed on thin grid oxygen low pressure memory device and thick grid oxygen HT selector part on described substrate;
Described thin grid oxygen low pressure memory device comprises the interdigitation active area 110 being formed among described substrate, and cover thin gate oxide and the grid 120 on described interdigitation active area 110, in wherein said interdigitation active area 110, comprise polylith stripe region 111, this polylith stripe region 111 is extended along grid length direction.
Although it will be appreciated by those skilled in the art that described thin gate oxide is not shown in Figure 4, this thin gate oxide covers on interdigitation active area 112, and is arranged between described grid 120 and substrate 100.In addition, in OTP parts structure illustrated in fig. 4, described thick grid oxygen HT selector part consists of substrate 100, the interdigitation active area 112, thick grating oxide layer and the grid 130 that are formed among described substrate, and wherein the arrangement of each several part can, with reference to prior art, not repeat them here.Similarly, although not shown described thick grating oxide layer in Fig. 4, those skilled in the art are to be understood that this thick grating oxide layer covers on substrate 100, and are arranged between grid 130 and substrate 100.
Described interdigitation active area 112 can form by the method for Implantation, and the dopant type of described Implantation is consistent with type of device.That is,, if device is NMOS, the dopant type of Implantation is N-type; If device is PMOS, the dopant type of Implantation is P type.
The material of described thin gate oxide and described thick grating oxide layer can be thermal oxide layer, comprises silica or silicon oxynitride, also can be high K dielectric, for example HfO
2, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, Al
2o
3, La
2o
3, ZrO
2, a kind of or its combination in LaAlO, the thickness of described thin gate oxide and described thick grating oxide layer is relevant with the design requirement of described OTP parts structure, particularly, the thickness of the described thin gate oxide of mentioning in this specific embodiment is less than or equal to 5 nanometers, and the thickness of the thick grating oxide layer of described thick grid oxygen HT selector part is more than or equal to 1.5 times of thickness of described thin gate oxide.
In this embodiment, described polylith stripe region 111 is arranged in parallel discretely in grid width direction, preferably, the width range of stripe region 111 in grid width direction is 5nm to 5 μ m, and in polylith stripe region 111, between adjacent a pair of stripe region 111, the scope of the distance in grid width direction is 5nm to 5 μ m.The grid length of grid 130 is more than or equal to 1.5 times of the width of gate line 120 on grid length direction.
In optional embodiment, the sidewall of described gate line 121 and/or grid 130 can form around the side wall (not shown) of this gate line 120 and/or grid 130, and this side wall is for isolating grid 120 and/or grid 130.Described side wall can be formed by silicon nitride, silica, silicon oxynitride, carborundum and/or other suitable materials, and described side wall can have sandwich construction, and its thickness range is approximately for example 10nm-100nm.
In OTP parts structure shown in Figure 10, grid 120 forms an independently storage tube structure with thin gate oxide, stripe region 111 and the substrate 100 of its below, a plurality of described storage tube structures form described thin grid oxygen low pressure memory device, and described in each, the maximum operation voltage of storage tube is 3.3V.The operating voltage that comprises the thick grid oxygen HT selector part of described grid 130 is more than or equal to 1.5 times of operating voltage of this storage tube, according to the design requirement of concrete technology and circuit, can specifically determine the size of each several part in described thick grid oxygen HT selector part.
OTP parts structure shown in Figure 10 is programmed, a plurality of storage tubes that specifically it comprised are programmed, to puncture the thin gate oxide of grid 120 belows, conventionally gate line 120 the most easily produces breakdown point with the infall of stripe region 111, and for example breakdown point may appear at the pointed region of a plurality of circles 143 in Figure 10.Certainly, described in each there is the probability that not breakdown probability or breakdown point appear at undesirable position in storage tube, for storage tube described in each, the probability whether breakdown point meets the demands and described in other storage tube relatively independent, do not get rid of the situation that has storage tube described in some cannot detect read current.Please refer to Figure 11, Figure 11 is the electrical block diagram of the OTP parts structure shown in Figure 10, consistent with the structure shown in Figure 10, grid 120 can form described storage tube with different stripe region 111 at diverse location respectively, and a plurality of described storage tubes are parallel-connection structures.According to this circuit structure, described OTP parts structure is carried out read operation after carrying out programming, for the thin grid oxygen low pressure memory device forming for a plurality of described storage tubes, only need wherein there is a storage tube read current can be detected, described thin grid oxygen low pressure memory device just can detect read current, if a plurality of storage tubes can detect read current, now read current is the read current sum of the plurality of storage tube.With regard to probability angle, in described thin grid oxygen low pressure memory device, all described storage tubes all occur that the undesirable situation probability of breakdown point is less, the probability that correspondingly this thin grid oxygen low pressure memory device can detect read current is larger, therefore can to meet the probability of demand of read operation larger compared to existing technology for described thin grid oxygen low pressure memory device, can increase thus the product yield of chip.
It should be noted that, the thin grid oxygen low pressure memory device of the OTP parts structure shown in Figure 10 has the interdigitation active area 112 that comprises polylith stripe region 111, and in Figure 10, this interdigitation active area 112 only comprises 3 stripe region 111, but can not limit described in the thin grid oxygen low pressure memory device of OTP parts structure provided by the present invention the concrete quantity of included stripe region 111 in interdigitation active area with this, common described interdigitation active area 112 comprises at least two stripe region 111.
Preferably, considering and increase the crosspoint of grid 120 and interdigitation active area 110 so that form more described storage tube, can be the interdigitation grid shown in Fig. 4 or Fig. 6 by the improved shape of grid 120.Please refer to Figure 12, Figure 12 is the front view that a preferred embodiment of the OTP parts structure shown in Figure 10 is observed from the high direction of grid, compare with the OTP shown in Figure 10, its difference is: grid 120 is improved to interdigitation grid, this interdigitation grid comprises many gate lines 121, and these many gate lines 121 are arranged in parallel discretely on grid length direction.Gate line 121 the most easily punctures with the infall of stripe region 111, for example the pointed region of a plurality of circles 144 in Figure 12.The circuit structure of the OTP parts structure that the embodiment shown in Figure 12 provides and operation principle thereof can with reference in above for the description of Fig. 7, do not repeat them here.
Further, please refer to Figure 13, Figure 13 is according to the structural representation of OTP storage organization of the present invention, and this OTP storage organization comprises:
At least one memory cell 211;
A plurality of redundant storage units 221 corresponding with memory cell described in each 211;
Described memory cell 211 and described redundant storage unit 221 comprise the OTP parts structure as middle Fig. 4 to Figure 12 any one is provided above;
Described a plurality of redundant storage unit 221, for after detecting described memory cell 211 program fails, the plurality of redundant storage unit 221 orders being carried out to redundancy programming, until detect, after current redundant storage unit 221 programme successfully, stop described redundancy and programme.
Alternatively, described memory cell 211 is arranged in OTP storage array 210, and described a plurality of redundant storage units are separately positioned in different OTP redundant storage arrays 220.
Preferably, in OTP storage organization shown in Figure 13, for example comprise OTP storage array 210, and for the programming of described redundancy tactic No. 1 to n OTP redundant storage array 220, wherein OTP storage array 210 is in full accord with the structure of described redundant storage array 220, memory cell 211 is for example the m unit in this OTP storage array, and a plurality of redundant storage units 221 of its correspondence are respectively also the m unit in the OTP redundant storage array that belongs to of described redundant storage unit 221.Memory cell 211 is being carried out and programmed and detect after described program fail, next step selects No. 1 m redundant storage unit 221 in OTP redundant storage array 220 to carry out described redundancy programming to it from described n OTP redundant storage array 220, whether and it is successful to detect this redundancy programming, if successful stop the programming of described redundancy, if failed would continue from described No. 1 to selecting n OTP redundant storage array 220 No. 2 m redundant storage 221 in OTP redundant storage array 220 to carry out redundancy programming to it, and the whether successful step of this redundancy programming of duplicate detection, once described redundancy be detected, programme successfully, stop this redundancy programming.The principle of this redundancy programming is to guarantee that memory cell 211 has several redundant storage units that can be used as alternative programming object 221 at least.
When the memory cell 211 in OTP storage array 210 is carried out read operation, read current is the read current sum of the redundant storage unit 221 of redundancy programming described in memory cell 211 and corresponding a plurality of executeds thereof.In reality is implemented, the numerical values recited of n can be rationally set, to guarantee that probability that memory cell 211 can detect read current is in tolerance interval.
Although describe in detail about example embodiment and advantage thereof, be to be understood that in the situation that do not depart from the protection range that spirit of the present invention and claims limit, can carry out various variations, substitutions and modifications to these embodiment.For other examples, when those of ordinary skill in the art should easily understand within keeping protection range of the present invention, the order of processing step can change.
OTP parts architecture advances provided by the invention active area shape and/or the gate shapes of it thin grid oxygen low pressure memory device comprising, from circuit structure, only having a storage tube with thin grid oxygen low pressure memory device in prior art compares, thin grid oxygen low pressure memory device after this improvement has the storage tube of a plurality of parallel connections, first, the storage tube of the plurality of parallel connection has relatively independent breakdown probability and breakdown point distributing position probability, also after meaning the plurality of storage tube being programmed, all storage tubes all occur that the probability of program fail is less, can greatly increase the probability that read current can be detected, further, the plurality of storage tube is set and can improves read current, the read current of OTP parts structure is more easily detected.
In addition, OTP storage organization provided by the invention has been used OTP parts structure provided by the invention as memory cell and redundant storage unit, in the situation of wherein said redundant storage unit as the described memory cell program fail of reply, carry out later programmed, to guarantee that the OTP memory cell in OTP storage organization can detect read current on programmed logic.
To sum up, OTP parts structure provided by the invention and OTP storage organization, all promoted the product yield of chip.
Range of application of the present invention is not limited to technique, mechanism, manufacture, material composition, means, method and the step of the specific embodiment of describing in specification.From disclosure of the present invention, as those of ordinary skill in the art, will easily understand, for the technique, mechanism, manufacture, material composition, means, method or the step that have existed or be about to develop at present later, wherein they carry out identical function or the identical result of acquisition cardinal principle of corresponding embodiment cardinal principle of describing with the present invention, according to the present invention, can apply them.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection range.
Claims (16)
1. an OTP parts structure, this OTP parts structure comprises:
Substrate;
Be formed on thin grid oxygen low pressure memory device and thick grid oxygen HT selector part on described substrate;
Described thin grid oxygen low pressure memory device comprises the active area being formed among described substrate, and covers thin gate oxide and the interdigitation grid on described active area, and wherein said interdigitation grid comprises many gate lines.
2. OTP parts structure according to claim 1, wherein:
Described interdigitation grid also comprises main grid;
Described many gate lines are connected with described main grid and extend along grid length direction.
3. OTP parts structure according to claim 2, wherein:
Described many gate lines are arranged in parallel discretely in grid width direction.
4. OTP parts structure according to claim 3, wherein:
The width range of described gate line in grid width direction is 5nm to 5 μ m.
5. OTP parts structure according to claim 3, wherein:
In described many gate lines, between adjacent pair of grid lines, the scope of the distance in grid width direction is 5nm to 5 μ m.
6. OTP parts structure according to claim 1, wherein:
Described many gate lines are arranged in parallel discretely on grid length direction.
7. OTP parts structure according to claim 6, wherein:
The width range of described gate line on grid length direction is 5nm to 5 μ m.
8. OTP parts structure according to claim 6, wherein:
In described many gate lines, between adjacent pair of grid lines, the scope of the distance on grid length direction is 5nm to 5 μ m.
9. according to the OTP parts structure described in claim 1 to 8 any one, wherein:
Described active area is interdigitation active area, in this interdigitation active area, comprises polylith stripe region, and this polylith stripe region is arranged in parallel discretely.
10. an OTP parts structure, this OTP parts comprises:
Substrate;
Be formed on thin grid oxygen low pressure memory device and thick grid oxygen HT selector part on described substrate;
Described thin grid oxygen low pressure memory device comprises the interdigitation active area being formed among described substrate, and cover thin gate oxide and the grid on described interdigitation active area, wherein said interdigitation comprises polylith stripe region in active area, and this polylith stripe region is extended along grid length direction.
11. OTP parts structures according to claim 10, wherein:
Described polylith stripe region is arranged in parallel discretely in grid width direction.
12. OTP parts structures according to claim 11, wherein:
The width range of described stripe region in grid width direction is 5nm to 5 μ m.
13. OTP parts structures according to claim 11, wherein:
In described polylith stripe region, between adjacent a pair of stripe region, the scope of the distance in grid width direction is 5nm to 5 μ m.
14. according to claim 10 to the OTP parts structure described in 13 any one, wherein:
Described grid is interdigitation grid, and this interdigitation grid comprises many gate lines, and these many gate lines are arranged in parallel discretely on grid length direction.
15. 1 kinds of OTP storage organizations, this OTP storage organization comprises:
At least one memory cell;
A plurality of redundant storage units corresponding with memory cell described in each;
Described memory cell and described redundant storage unit comprise the OTP parts structure as described in claim 1 to 14 any one;
Described a plurality of redundant storage unit, for after detecting described memory cell program fail, the plurality of redundant storage unit sequentially being carried out to redundancy programming, stops described redundancy after current redundant storage unit programme successfully and programmes until detect.
16. OTP storage organizations according to claim 15, wherein:
Described memory cell is arranged in OTP storage array;
Described a plurality of redundant storage unit is separately positioned in different OTP redundant storage arrays.
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