CN103743929A - 1kohm and 100ohm standard resistors - Google Patents
1kohm and 100ohm standard resistors Download PDFInfo
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- CN103743929A CN103743929A CN201310706851.3A CN201310706851A CN103743929A CN 103743929 A CN103743929 A CN 103743929A CN 201310706851 A CN201310706851 A CN 201310706851A CN 103743929 A CN103743929 A CN 103743929A
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Abstract
The invention relates to 1kohm and 100ohm standard resistors. The 1kohm standard resistor comprises a first circuit, a second circuit and third circuit which are connected in parallel. The first circuit is composed of 12 quantized Hall devices which are connected in parallel. The second circuit is composed of 3 series-connected quantized Hall devices and 2 parallel-connected quantized Hall devices which are connected in series. The third circuit is composed of one quantized Hall devices, 2 parallel-connected quantized Hall devices and 9 parallel-connected quantized Hall devices which are connected in series. According to the structure of the 1kohm standard resistor, ratio of the maximum current to the minimum current passing through the quantized Hall devices is only 14.5, only 29 quantized Hall devices are used by the structure of the 1kohm standard resistor and relative deviation of the structure of the 1kohm standard resistor is only 3.42E-08 so that the invention provides the structure of the 1kohm standard resistor which is optimal in current distribution, minimum in the number of the quantized Hall devices and quite low in relative deviation.
Description
Technical field
The present invention relates to a kind of 1k Ω and 100 Ω measuring resistances.Relate in particular to a kind of 1k Ω and 100 Ω measuring resistances based on Quantum Hall Effect.
Background technology
Before 20 th Century, various countries have set up classical mete-wand.These mete-wands are all generally the principles according to classical physics, realize with certain stable especially material object, therefore be called material standard.Voltage unit and unit of resistance are the base units in electricity metering, are wherein the one group of measuring resistance coils being kept in the International Bureau of Wieghts and Measurements of Paris with the corresponding material standard of unit of resistance, with mean value maintenance unit of resistance 1 Ω of its resistance value.Within every 3 years, once various countries deliver to Paris the measuring resistance of oneself, compare with International Bureau of Wieghts and Measurements Resistance standard, and according to the national standard value of the difference correction oneself of comparison gained.Its weak point of material standard is, once after making, always have some uppity physics, chemical process make its characteristic occur small, change slowly, thereby the value that they are preserved also can change to some extent.On the other hand, the physical measure benchmark whole world of highest ranking only has one or a set of, once due to disaster, war or other reason accidental damage, just cannot completely livingly copy out, the unit value of originally preserving continuously also can therefore interrupt.
During character that U.S. physicist Hall conducts electricity in magnetic field at research conductor in 1879, found classical Hall effect.Be that Hall resistance changes and linear increasing with magnetic field.If the motion of electronics is stopped (restriction) in some directions (as z direction) in threedimensional solid, so, electronics just can only be in the upper free movement of two other direction (x, y direction), this free electron with two degree of freedom is just called two-dimensional electron gas (Two-dimensional electron gas, 2DEG).After 100 years 1980, the blue or green Hall resistance of finding the two-dimensional electron gas sample under profound hypothermia and high-intensity magnetic field of roentgen Feng Keli does not change and linear increasing with magnetic field, but by a platform, transit to another platform, the Hall voltage V at each platform place
hwith the ratio of channel current I, i.e. Hall resistance R
h, meet formula below: V
h/ I=R
h=R
k/ i=h/ie
2(wherein h is Planck's constant to ohm, and e is electron charge, R
kbe called as the blue or green constant of gram profit, i is the positive integer 1,2,3 corresponding with each platform ...), this expression formula shows a two-dimensional electron gas sample (quantization hall device) that physical characteristics is qualified, and let it be size and shape is how, and its Quantum Hall resistance all will be exactly by above-mentioned formula R
h=R
k/ i=h/ie
2draw, the shape of Quantum Hall resistance numerical value and quantization hall device is irrelevant, Here it is Quantum Hall Effect.Therefore, the mete-wand realizing with the macroscopic appearance of quantum effect, from principle eliminated time drift, the impact on mete-wand, the stability and the accuracy that have improved mete-wand are changed in place.Because quantum Hall resistance provides the reproduction unit of resistance with ubiquity and high measurement accuracy, from January 1 nineteen ninety, CIPM worldwide enables Quantum Hall resistance standard and replaces original material standard, and has provided CODATA recommended R
h=h/e
2=25812.807 Ω (being operated in the situation of the first quantization platform for quantization hall device).For the quantization hall device of making of gallium arsenide-aluminum gallium arsenide heterojunction material, when being operated in the second quantization platform place, it can obtain Quantum Hall resistance value the most accurately, now the Quantum Hall resistance R of above-mentioned quantization hall device
hresistance be h/2e
2Ω, i.e. 12906.4035 Ω.
The measuring resistance that is generally used for transmitting is metric resistance, as 1 Ω, 100 Ω, 1k Ω and 100k Ω.If by this non integer value of Quantum Hall resistance, be delivered to accurately integer-valued measuring resistance, conventionally there are two kinds of methods: the first is to adopt integer resistance connection in series-parallel to obtain the Harmon measurer method of non-integer resistance value ratio.In this method uncertainty of the eighties, can reach 10
-8magnitude, but the instability of resistive element has limited the progress of this method, and use is also very loaded down with trivial details, seldom uses now; Second method is the cryo-current comparator that the nineties develops and grows up, and its uncertainty can reach 10
-9magnitude, precision is very high, all quite complicated but coiling in its manufacturing process, shielding and noise are got rid of, and during use, except the cryogenic system of hall device and magnet, also needs other a set of liquid helium system, is also suitable trouble.Therefore, provide a kind of, easy realization low to environmental requirement Quantum Hall resistance can be transformed into integer-valued measuring resistance be accurately problem demanding prompt solution.
Summary of the invention
For this reason, technical matters to be solved by this invention is in prior art, Quantum Hall resistance to be delivered to accurately the method for integer-valued measuring resistance, high to environmental requirement, complex operation, what the invention provides a kind of, easy realization low to environmental requirement can be converted into Quantum Hall resistance integer-valued 1k Ω and 100 Ω measuring resistances accurately.
For solving the problems of the technologies described above, technical scheme of the present invention is as follows:
The invention provides a kind of 1k Ω measuring resistance, comprise the first circuit, second circuit and tertiary circuit in parallel;
Wherein the first circuit is comprised of 12 quantization hall devices in parallel;
Second circuit forms after being connected by the quantization hall device of 3 series connection quantization hall device in parallel with 2;
Tertiary circuit forms after being connected by a quantization hall device, 2 quantization hall devices in parallel and 9 quantization hall devices in parallel.
The present invention also provides a kind of 100 Ω measuring resistances, comprises the first circuit, second circuit and tertiary circuit in parallel;
Wherein the first circuit is comprised of 127 quantization hall devices in parallel;
Second circuit forms after being connected by the quantization hall device of 3 series connection quantization hall device in parallel with 4;
Tertiary circuit forms after being connected by the quantization hall device of 5 series connection, 2 quantization hall devices in parallel, 8 quantization hall devices in parallel and 32 quantization hall devices in parallel.
1k Ω measuring resistance of the present invention, described quantization hall device is take gallium arsenide as substrate, utilize the method for molecular beam epitaxy to grow in described gallium arsenide substrate two-dimensional electron gas structure that the gallium arsenide-aluminum gallium arsenide of high mobility forms.
1k Ω measuring resistance of the present invention, described quantization hall device is that the Hall bar structure and the described Hall bar structure both sides that adopt micro-processing technology to prepare are prepared with Ohm contact electrode.
100 Ω measuring resistances of the present invention, described quantization hall device is take gallium arsenide as substrate, utilize the method for molecular beam epitaxy to grow in described gallium arsenide substrate two-dimensional electron gas structure that the gallium arsenide-aluminum gallium arsenide of high mobility forms.
100 Ω measuring resistances of the present invention, described quantization hall device is that the Hall bar structure and the described Hall bar structure both sides that adopt micro-processing technology to prepare are prepared with Ohm contact electrode.
Technique scheme of the present invention has the following advantages compared to existing technology:
(1) the invention provides a kind of 1k Ω measuring resistance structure, by the series parallel structure of 29 quantization hall devices, formed, thereby by this non integer value of Quantum Hall resistance, be converted into accurately the measuring resistance of 1k Ω.Because the working current of single quantization hall device is too high, can cause quantum effect to lose efficacy, and too low electric current make output voltage be difficult for measuring.So when considering Hall round values resistance, consider to make relative deviation as far as possible little except needs, outside the number of quantization hall device is tried one's best less, also need to consider to make the electric current in each quantization hall device differ not too big.
According to 1k Ω measuring resistance structure provided by the present invention, can calculate the maximum current that passes through in quantization hall device and the ratio of minimum current and only have 14.5, the electric current in the each quantization hall device in this 1k Ω measuring resistance structure differs and is not too large, and this 1k Ω measuring resistance structure has only been used 29 quantization hall devices, its relative deviation only has 3.42E-08, therefore, the invention provides a kind of have optimum current distribution and minimum quantization hall device number and the very little 1k Ω measuring resistance structure of relative deviation.
And 1k Ω measuring resistance structure provided by the present invention, can adopt business room temperature resistance electric bridge to compare, can, by Hall resistance standard from national standard laboratory, be extended to each calibration laboratory like this.Compared to prior art, the invention provides a kind of measuring resistance that Quantum Hall resistance can be converted into accurately to 1k Ω of, easy realization low to environmental requirement.
(2) the invention provides a kind of 100 Ω measuring resistance structures, by the series parallel structure of 181 quantization hall devices, formed, thereby by this non integer value of Quantum Hall resistance, be delivered to accurately the measuring resistance of 100 Ω.According to 100 Ω measuring resistance structures provided by the present invention, can calculate the maximum current that passes through in quantization hall device and the ratio of minimum current is 181, and its relative deviation only has 6.80E-10, therefore, the invention provides a kind of have optimum current distribution and 100 very little Ω measuring resistance structures of relative deviation.
And 100 Ω measuring resistance structures provided by the present invention, can adopt business room temperature resistance electric bridge to compare, can, by Hall resistance standard from national standard laboratory, be extended to each calibration laboratory like this.Compared to prior art, the invention provides a kind of measuring resistance that Quantum Hall resistance can be delivered to accurately to 100 Ω of, easy realization low to environmental requirement.
Accompanying drawing explanation
For content of the present invention is more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation of 1k Ω measuring resistance described in embodiment 1;
Fig. 2 is the structural representation of 100 Ω measuring resistances described in embodiment 2.
Embodiment
Embodiment 1
The present embodiment provides a kind of 1k Ω measuring resistance, as shown in Figure 1, comprises the first circuit, second circuit and tertiary circuit in parallel.
Wherein the first circuit is comprised of 12 quantization hall devices in parallel.
Second circuit forms after being connected by the quantization hall device of 3 series connection quantization hall device in parallel with 2.
Tertiary circuit forms after being connected by a quantization hall device, 2 quantization hall devices in parallel and 9 quantization hall devices in parallel.
As one preferred embodiment, 1k Ω measuring resistance described in the present embodiment, described quantization hall device is take gallium arsenide as substrate, utilize the method for molecular beam epitaxy to grow in described gallium arsenide substrate two-dimensional electron gas structure that the gallium arsenide-aluminum gallium arsenide of high mobility forms.
As one preferred embodiment, the 1k Ω measuring resistance described in the present embodiment, described quantization hall device is that the Hall bar structure and the described Hall bar structure both sides that adopt micro-processing technology to prepare are prepared with Ohm contact electrode.
Because for the quantization hall device of making of gallium arsenide-aluminum gallium arsenide heterojunction material, can obtain Quantum Hall resistance value the most accurately when it is operated in the second quantization platform place, now the Quantum Hall resistance R of above-mentioned quantization hall device
hresistance be h/2e
2Ω, i.e. 12906.4035 Ω.
And according to the computing formula of series and parallel compensated resistance, can draw:
By R
hthe above-mentioned formula of=12906.4035 Ω substitution can obtain, R
1k Ω=999.99996583 Ω, therefore described in the present embodiment, the relative deviation of 1k Ω measuring resistance and 1k Ω nominal value resistance is (1000 Ω-999.99996583 Ω)/1000 Ω, i.e. 3.42E-08.
Because the working current of single quantization hall device is too high, can cause quantum effect to lose efficacy, and too low electric current make output voltage be difficult for measuring.So when considering Hall round values resistance, consider to make relative deviation as far as possible little except needs, outside the number of quantization hall device is tried one's best less, also need to consider to make the electric current in each quantization hall device differ not too big.
As shown in Figure 1,1k Ω measuring resistance described in the present embodiment, by 29 quantization hall device connection in series-parallel, formed, known according to 29 series-parallel relations of quantization hall device shown in Fig. 1, the maximum current passing through in quantization hall device in 1k Ω measuring resistance described in the present embodiment and the ratio of minimum current are 14.5.Therefore, the present embodiment provides a kind of have optimum current distribution and minimum quantization hall device number and the very little 1k Ω measuring resistance structure of relative deviation.
The 1k Ω measuring resistance structure that the present embodiment provides, described quantization hall device is take gallium arsenide as substrate, utilize the method for molecular beam epitaxy to grow in described gallium arsenide substrate two-dimensional electron gas structure that the gallium arsenide-aluminum gallium arsenide of high mobility forms.Therefore the Quantum Hall resistance numerical value of the quantization hall device described in the present embodiment and the shape of quantization hall device are irrelevant, from principle eliminated time drift, the impact on mete-wand, the stability and the accuracy that have improved mete-wand are changed in place.And the 1k Ω measuring resistance described in the present embodiment, can adopt business room temperature resistance electric bridge to compare, can, by Hall resistance standard from national standard laboratory, be extended to each calibration laboratory like this.Compared to prior art, the present embodiment provides a kind of measuring resistance that Quantum Hall resistance can be converted into accurately to 1k Ω of, easy realization low to environmental requirement.
Embodiment 2
The present embodiment provides a kind of 100 Ω measuring resistances, as shown in Figure 2, comprises the first circuit, second circuit and tertiary circuit in parallel.
Wherein the first circuit is comprised of 127 quantization hall devices in parallel.
Second circuit forms after being connected by the quantization hall device of 3 series connection quantization hall device in parallel with 4.
Tertiary circuit forms after being connected by the quantization hall device of 5 series connection, 2 quantization hall devices in parallel, 8 quantization hall devices in parallel and 32 quantization hall devices in parallel.
As one preferred embodiment, 100 Ω measuring resistances described in the present embodiment, described quantization hall device is take gallium arsenide as substrate, utilize the method for molecular beam epitaxy to grow in described gallium arsenide substrate two-dimensional electron gas structure that the gallium arsenide-aluminum gallium arsenide of high mobility forms.
As one preferred embodiment, 100 Ω measuring resistances described in the present embodiment, described quantization hall device is that the Hall bar structure and the described Hall bar structure both sides that adopt micro-processing technology to prepare are prepared with Ohm contact electrode.
Because for the quantization hall device of making of gallium arsenide-aluminum gallium arsenide heterojunction material, can obtain Quantum Hall resistance value the most accurately when it is operated in the second quantization platform place, now the Quantum Hall resistance R of above-mentioned quantization hall device
hresistance be h/2e
2Ω, i.e. 12906.4035 Ω.
According to the computing formula of series and parallel compensated resistance, can draw:
By R
hthe above-mentioned formula of=12906.4035 Ω substitution can obtain, R
100 Ω=99.999999932 Ω, therefore described in the present embodiment, the relative deviation of 100 Ω measuring resistances and 100 Ω nominal value resistance is (100 Ω-99.999999932 Ω)/100 Ω, i.e. 6.80E-10.
Because the working current of single quantization hall device is too high, can cause quantum effect to lose efficacy, and too low electric current make output voltage be difficult for measuring.So when considering Hall round values resistance, consider to make relative deviation as far as possible little except needs, outside the number of quantization hall device is tried one's best less, also need to consider to make the electric current in each quantization hall device differ not too big.
As shown in Figure 2,100 Ω measuring resistances described in the present embodiment, by 181 quantization hall device connection in series-parallel, formed, known according to 181 series-parallel relations of quantization hall device shown in Fig. 2, the maximum current passing through in quantization hall device in 100 Ω measuring resistances described in the present embodiment and the ratio of minimum current are 181.Therefore, the present embodiment provides a kind of have optimum current distribution and 100 very little Ω measuring resistance structures of relative deviation.
The 100 Ω measuring resistance structures that the present embodiment provides, described quantization hall device is take gallium arsenide as substrate, utilize the method for molecular beam epitaxy to grow in described gallium arsenide substrate two-dimensional electron gas structure that the gallium arsenide-aluminum gallium arsenide of high mobility forms.Therefore the Quantum Hall resistance numerical value of the quantization hall device described in the present embodiment and the shape of quantization hall device are irrelevant, from principle eliminated time drift, the impact on mete-wand, the stability and the accuracy that have improved mete-wand are changed in place.And 100 Ω measuring resistances described in the present embodiment, can adopt business room temperature resistance electric bridge to compare, can, by Hall resistance standard from national standard laboratory, be extended to each calibration laboratory like this.Compared to prior art, the present embodiment provides a kind of measuring resistance that Quantum Hall resistance can be converted into accurately to 1k Ω of, easy realization low to environmental requirement.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all embodiments.And the apparent variation of being extended out thus or variation are still among the protection domain in the invention.
Claims (6)
1. a 1k Ω measuring resistance, is characterized in that, comprises the first circuit, second circuit and tertiary circuit in parallel;
Wherein the first circuit is comprised of 12 quantization hall devices in parallel;
Second circuit forms after being connected by the quantization hall device of 3 series connection quantization hall device in parallel with 2;
Tertiary circuit forms after being connected by a quantization hall device, 2 quantization hall devices in parallel and 9 quantization hall devices in parallel.
2. 100 Ω measuring resistances, is characterized in that, comprise the first circuit, second circuit and tertiary circuit in parallel;
Wherein the first circuit is comprised of 127 quantization hall devices in parallel;
Second circuit forms after being connected by the quantization hall device of 3 series connection quantization hall device in parallel with 4;
Tertiary circuit forms after being connected by the quantization hall device of 5 series connection, 2 quantization hall devices in parallel, 8 quantization hall devices in parallel and 32 quantization hall devices in parallel.
3. 1k Ω measuring resistance according to claim 1, is characterized in that:
Described quantization hall device is take gallium arsenide as substrate, utilize the method for molecular beam epitaxy to grow in described gallium arsenide substrate two-dimensional electron gas structure that the gallium arsenide-aluminum gallium arsenide of high mobility forms.
4. 1k Ω measuring resistance according to claim 3, is characterized in that:
Described quantization hall device is that the Hall bar structure and the described Hall bar structure both sides that adopt micro-processing technology to prepare are prepared with Ohm contact electrode.
5. 100 Ω measuring resistances according to claim 2, is characterized in that:
Described quantization hall device is take gallium arsenide as substrate, utilize the method for molecular beam epitaxy to grow in described gallium arsenide substrate two-dimensional electron gas structure that the gallium arsenide-aluminum gallium arsenide of high mobility forms.
6. 100 Ω measuring resistances according to claim 5, is characterized in that:
Described quantization hall device is that the Hall bar structure and the described Hall bar structure both sides that adopt micro-processing technology to prepare are prepared with Ohm contact electrode.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108008193A (en) * | 2017-11-29 | 2018-05-08 | 北京东方计量测试研究所 | Combined type quantum Hall resistance sample ratio checker |
| CN115792381A (en) * | 2022-11-24 | 2023-03-14 | 中国计量科学研究院 | Device and method for precisely measuring load coefficient by adopting combined quantum Hall resistor |
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2013
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108008193A (en) * | 2017-11-29 | 2018-05-08 | 北京东方计量测试研究所 | Combined type quantum Hall resistance sample ratio checker |
| CN108008193B (en) * | 2017-11-29 | 2020-02-07 | 北京东方计量测试研究所 | Combined quantum Hall resistance sample proportion checker |
| CN115792381A (en) * | 2022-11-24 | 2023-03-14 | 中国计量科学研究院 | Device and method for precisely measuring load coefficient by adopting combined quantum Hall resistor |
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