CN103743439A - Micro mechanical sensor with two layers of base plates - Google Patents
Micro mechanical sensor with two layers of base plates Download PDFInfo
- Publication number
- CN103743439A CN103743439A CN201410001232.9A CN201410001232A CN103743439A CN 103743439 A CN103743439 A CN 103743439A CN 201410001232 A CN201410001232 A CN 201410001232A CN 103743439 A CN103743439 A CN 103743439A
- Authority
- CN
- China
- Prior art keywords
- cavity
- substrate
- micro mechanical
- mechanical sensor
- measuring resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a micro mechanical sensor with two layers of base plates, and belongs to the technical field of micro mechanical sensors. The sensor comprises the two layers of base plates, a second cavity, a third cavity and a through hole, wherein the base plates are made of monocrystalline silicon wafers, the base plates, the second cavity, the third cavity and the through hole form a unique path for gas circulation, a measuring resistor and a heating resistor are arranged in a narrowest position in the gas circulation path, and the gas flowing speed is accelerated. The micro mechanical sensor has the advantages that an MEMS (micro-electromechanical system) processing process is adopted, the size of the sensor is reduced, and the micro mechanical sensor can be used for measuring precipitation particles.
Description
Technical field
The invention discloses the micro mechanical sensor with bilevel substrate, belong to the technical field of micro mechanical sensor.
Background technology
Measuring precipitation is ingredient important in meteorologic survey.The method of traditional measurement precipitation is mainly used tipping bucket type or cylinder type rain gage.But traditional rain gage exists and infiltrates error, when only having a small amount of precipitation particles, infiltrate error and may make instrument can not find precipitation particles.Traditional rain gage can not be measured the quality of raindrop simultaneously, can not distinguish raindrop or hail.
The present raindrop spectrometer based on optical scattering principle, can measure the quality of raindrop, also can avoid infiltrating error.But this raindrop spectrometer is expensive, be difficult to extensive use, its production technology is also incompatible with microelectronic technique.Instrument based on optical principle is also easily subject to the impact of surrounding environment, and for example dust shelters from camera lens, can exert an influence to measuring.
Summary of the invention
Technical matters to be solved by this invention is the deficiency for above-mentioned background technology, and the micro mechanical sensor with bilevel substrate is provided.
The present invention adopts following technical scheme for achieving the above object:
The micro mechanical sensor with bilevel substrate, is characterized in that, the first substrate that monocrystalline silicon piece is made, second substrate, second substrate is the base with the micro mechanical sensor of bilevel substrate, first substrate is placed in second substrate top and is connected with second substrate, wherein
First substrate obtains the first cavity of opening upwards and the second cavity that Open Side Down through MEMS PROCESS FOR TREATMENT, and the part first substrate between described the first cavity and described the second cavity forms primary diaphragm,
Second substrate obtains the 3rd cavity of opening upwards and the 4th cavity that Open Side Down through MEMS PROCESS FOR TREATMENT, part second substrate between described the 3rd cavity and described the 4th cavity forms secondary diaphragm, on described secondary diaphragm, have through hole, described the 3rd cavity is communicated with described the second cavity, is fixed with heating resistor, the first measuring resistance that is placed in respectively heating resistor both sides, the second measuring resistance on described secondary diaphragm.
Further prioritization scheme as described micro mechanical sensor, secondary diaphragm towards the surface of the 3rd cavity on have one deck thermofin, described heating resistor, the first measuring resistance, the second measuring resistance are fixed in thermofin finite interval, and finite interval is from from the connectivity part of the second cavity and the 3rd cavity to through hole.
Further, on described micro mechanical sensor, be fixed with oven dry resistance.
The present invention adopts technique scheme, has following beneficial effect:
(1) not only mass particle can be measured, particle phase can also be differentiated;
(2) sensor uses MEMS technique, and cost is lower, and processing quality is easy to control, and processing compatibility is good, has reduced sensor bulk;
(3) diaphragm of fixation measuring resistance and heating resistor has thermofin, effectively reduces resistance heat radiation, reduces sensor power consumption, prevents electric leakage;
When (4) first cavitys and the second cavity can be avoided particle hits diaphragm, diaphragm is damaged, and improves the reliability of sensor;
(5) the narrowest position layout measuring resistance and heating resistor in gas flowing path, has improved gas flow rates, and then has improved the sensitivity of micro mechanical sensor measurement gas flow velocity.
Accompanying drawing explanation
Fig. 1 is the structural drawing with the micro mechanical sensor of bilevel substrate.
Number in the figure explanation: 101, first substrate, 102, primary diaphragm, the 103, first cavity, 104, the second cavity, 201, second substrate, the 202, the 3rd cavity, 203, the 4th cavity, 204, secondary diaphragm, the 205, first measuring resistance, 206, heating resistor, 207, the second measuring resistance, 208, through hole, 209, pad, 210, dry resistance.
Embodiment
Below in conjunction with accompanying drawing, the technical scheme of invention is elaborated:
The micro mechanical sensor with bilevel substrate as shown in Figure 1, comprising: the first base that monocrystalline silicon piece is made
The slype that the second cavity 104, the 3rd cavity 202 form, has improved gas flow rates, and then has improved the sensitivity that micro mechanical sensor is measured.The effect of secondary diaphragm 204 is to reduce distributing of the interior heat of slype, improves the sensitivity that micro mechanical sensor is measured flow velocity.For distributing of heat in further reduction slype, secondary diaphragm 204 has one deck thermofin on the surface of the 3rd cavity 202, the optional polyimide of material of thermofin, silicon dioxide.Heating resistor 206, the first measuring resistance 205, the second measuring resistance 207 are fixed on thermofin.The thickness of while due to the natural oxidizing layer of monocrystalline silicon sheet surface only has nanoscale, and the first measuring resistance 205, heating resistor 206, the second measuring resistance 207 directly contact with monocrystalline silicon piece, and easily electric leakage arranges thermofin and can also prevent electric leakage.
Heating resistor 206, the first measuring resistance 205, the second measuring resistance 207 are fixed in thermofin finite interval, finite interval is from the connectivity part of the second cavity 104 and the 3rd cavity 202 to through hole 208: when the second cavity 104 is during in left side, the first measuring resistance 205, heating resistor 206, the second measuring resistance 207, on the right side of the second cavity 104, are positioned at again the left side of through hole 208 simultaneously; When the second cavity 104 is during on right side, the first measuring resistance 205, heating resistor 206, the second measuring resistance 207, in the left side of the second cavity 104, are positioned at again the right side of through hole 208 simultaneously.
Heating resistor 206 can play the effect of drying micro mechanical sensor, but because volume is smaller, power is not high, therefore need to increase one or more oven dry resistance 210, further dries micro mechanical sensor.Oven dry resistance 210 can be arranged on the first substrate 101 of micro mechanical sensor, or on second substrate 201.In the present embodiment, be provided with one and dry resistance 210, dry resistance 210 and be arranged on second substrate 201.
In sensor preparation process, need to prepare pad 209, the present embodiment is prepared pad 209 on second substrate 201, and on first substrate 101, prepares a through hole, is convenient to welding lead.In the preparation, the length of first substrate 101, second substrate 201 is identical, and two substrates adopt wafer level packaging, can improve encapsulation process efficiency.
In the present invention, provide the alternatives of preparing pad 209: first substrate 101 and second substrate 201 adopt respectively wafer-level package to prepare separately.The base that second substrate 201 is micro mechanical sensor, is placed in respectively second substrate 201 tops by pad 209, first substrate 101 and is connected with second substrate 201, and avoids pad 209 to contact with first substrate 101.The length of this alternatives first substrate 101, second substrate 201 is different, has saved material.When large-scale production, first substrate 101 and second substrate 201 adopt respectively wafer-level package to prepare separately, can reduce encapsulation process efficiency.
Utilization has the method for the micro mechanical sensor measurement particle of bilevel substrate, utilizes following principle: during particle hits primary diaphragm 102, primary diaphragm 102 is vibration up and down.The vibration of primary diaphragm 102 causes the air-flow velocity in slype to change, and the mobile meeting of gas makes the temperature on the first measuring resistance 205, the second measuring resistance 207 different.Because temperature variation can cause the voltage on the first measuring resistance 205, the second measuring resistance 207, change, therefore can measure particle according to the voltage difference of the first measuring resistance 205, the second measuring resistance 207.
Measure the voltage difference of the first measuring resistance 205 and the second measuring resistance 207 and can use the many measuring methods such as bridge measurement, analog to digital converter measurement.In the present embodiment, adopt the method for electric bridge to come measuring voltage poor, thereby measure particle.Utilization has the method for the micro mechanical sensor measurement particle of bilevel substrate, comprises the steps:
Step 1, applies voltage to heating resistor 206;
Step 2, when there is no particle hits primary diaphragm 102, measures the voltage difference U of the first measuring resistance 205, the second measuring resistance 207
0;
Step 3, the voltage difference U of the first measuring resistance 205, the second measuring resistance 207 is measured in continuation
1, the poor U of comparative voltage
1and voltage difference U
0amplitude, as voltage difference U
1with voltage difference U
0amplitude unequal, judgement has a precipitation particles.
Step 4, according to voltage difference U
1, measure precipitation particles:
Step 4.1: according to voltage difference U
1amplitude measure the quality of particle: during particle hits primary diaphragm 102, because the quality of different particles is different, the degree of primary diaphragm 102 up-down vibration also can be different.Cause the voltage difference U on the first measuring resistance 205, the second measuring resistance 207
1amplitude different, therefore can be according to voltage difference U
1amplitude measure the quality of particle.
Step 4.2: according to voltage difference U
1frequency measure the phase of particle: when solid particles and liquid particle hits primary diaphragm 102, its shock mode is different, be respectively elastic collision and inelastic collision, thereby the frequency of primary diaphragm 102 up-down vibration is different, cause the voltage difference U on the first measuring resistance 205, the second measuring resistance 207
1change frequency different, therefore can be according to voltage difference U
1positive and negative change frequency measure the phase of particle.
In sum, the present invention has following beneficial effect:
(1) not only mass particle can be measured, particle phase can also be differentiated;
(2) sensor uses MEMS technique, and cost is lower, and processing quality is easy to control, and processing compatibility is good, has reduced sensor bulk;
(3) diaphragm of fixation measuring resistance and heating resistor has thermofin, effectively reduces resistance heat radiation, reduces sensor power consumption, prevents electric leakage;
When (4) first cavitys and the second cavity can be avoided particle hits diaphragm, diaphragm is damaged, and improves the reliability of sensor;
(5) the narrowest position layout measuring resistance and heating resistor in gas flowing path, has improved gas flow rates, and then has improved the sensitivity of micro mechanical sensor measurement gas flow velocity.
Claims (3)
1. the micro mechanical sensor with bilevel substrate, it is characterized in that, the first substrate that monocrystalline silicon piece is made (101), second substrate (201), second substrate (201) is for having the base of the micro mechanical sensor of bilevel substrate, first substrate (101) is placed in second substrate (201) top and is connected with second substrate (201), wherein
First substrate (101) obtains first cavity (103) of opening upwards and the second cavity (104) that Open Side Down through MEMS PROCESS FOR TREATMENT, part first substrate between described the first cavity (103) and described the second cavity (104) forms primary diaphragm (102)
Second substrate (201) obtains the 3rd cavity (202) of opening upwards and the 4th cavity (203) that Open Side Down through MEMS PROCESS FOR TREATMENT, part second substrate between described the 3rd cavity (202) and described the 4th cavity (203) forms secondary diaphragm (204), on described secondary diaphragm (204), have through hole (208), described the 3rd cavity (202) is communicated with described the second cavity (104), on described secondary diaphragm (204), be fixed with heating resistor (206), be placed in respectively first measuring resistance (205) of heating resistor (206) both sides, the second measuring resistance (207).
2. micro mechanical sensor according to claim 1, it is characterized in that, described secondary diaphragm (204) has one deck thermofin on the surface of the 3rd cavity (202), described heating resistor (206), the first measuring resistance (205), the second measuring resistance (207) are fixed in thermofin finite interval, and finite interval is from the connectivity part of the second cavity (104) and the 3rd cavity (202) to through hole (208).
3. micro mechanical sensor according to claim 1 and 2, is characterized in that, is fixed with and dries resistance (210) on described micro mechanical sensor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410001232.9A CN103743439B (en) | 2014-01-03 | 2014-01-03 | There is the micro mechanical sensor of bilevel substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410001232.9A CN103743439B (en) | 2014-01-03 | 2014-01-03 | There is the micro mechanical sensor of bilevel substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103743439A true CN103743439A (en) | 2014-04-23 |
CN103743439B CN103743439B (en) | 2016-02-03 |
Family
ID=50500481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410001232.9A Expired - Fee Related CN103743439B (en) | 2014-01-03 | 2014-01-03 | There is the micro mechanical sensor of bilevel substrate |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103743439B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114018729A (en) * | 2021-11-02 | 2022-02-08 | 上海交通大学 | Micro-particle accelerating device based on MEMS technology |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006035374A (en) * | 2004-07-27 | 2006-02-09 | Japan Aviation Electronics Industry Ltd | Micromachine device |
US20060289415A1 (en) * | 2004-07-28 | 2006-12-28 | Richard Muehlheim | Micromechanical device having integrated heating |
US20090114016A1 (en) * | 2007-11-05 | 2009-05-07 | Invensense Inc. | Integrated microelectromechanical systems (mems) vibrating mass z-axis rate sensor |
CN201387334Y (en) * | 2009-03-10 | 2010-01-20 | 东南大学 | High-sensitivity rainfall sensor |
US20110159627A1 (en) * | 2009-12-28 | 2011-06-30 | Naresh Venkata Mantravadi | Method for fabricating a sensor |
CN202974545U (en) * | 2012-12-26 | 2013-06-05 | 南京高华科技有限公司 | Sensor capable of reducing errors |
-
2014
- 2014-01-03 CN CN201410001232.9A patent/CN103743439B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006035374A (en) * | 2004-07-27 | 2006-02-09 | Japan Aviation Electronics Industry Ltd | Micromachine device |
US20060289415A1 (en) * | 2004-07-28 | 2006-12-28 | Richard Muehlheim | Micromechanical device having integrated heating |
US20090114016A1 (en) * | 2007-11-05 | 2009-05-07 | Invensense Inc. | Integrated microelectromechanical systems (mems) vibrating mass z-axis rate sensor |
CN201387334Y (en) * | 2009-03-10 | 2010-01-20 | 东南大学 | High-sensitivity rainfall sensor |
US20110159627A1 (en) * | 2009-12-28 | 2011-06-30 | Naresh Venkata Mantravadi | Method for fabricating a sensor |
CN202974545U (en) * | 2012-12-26 | 2013-06-05 | 南京高华科技有限公司 | Sensor capable of reducing errors |
Non-Patent Citations (2)
Title |
---|
余辉洋等: "一种可用于雨量测量的压力传感器", 《东南大学学报(自然科学版)》, vol. 40, no. 3, 31 May 2010 (2010-05-31) * |
王冰等: "建筑物健康诊断两种风荷载传感器的设计与应用", 《传感器世界》, no. 9, 30 September 2012 (2012-09-30) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114018729A (en) * | 2021-11-02 | 2022-02-08 | 上海交通大学 | Micro-particle accelerating device based on MEMS technology |
CN114018729B (en) * | 2021-11-02 | 2022-05-17 | 上海交通大学 | Micro-particle accelerating device based on MEMS technology |
Also Published As
Publication number | Publication date |
---|---|
CN103743439B (en) | 2016-02-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101819214B (en) | Integrated anemograph based on ceramics wafer level package and preparation method thereof | |
CN110711608B (en) | Microfluidic chip for cell detection and preparation method thereof | |
CN205472637U (en) | Micro -electro -mechanical system package substrate | |
CN103743790B (en) | Based on the micro mechanical sensor of MEMS | |
CN102072967B (en) | Gold-gold bonding process-based thermal type wind speed and direction sensor and preparation method thereof | |
CN109164270B (en) | Ultra-wide range anemometer and manufacturing method | |
CN105181189B (en) | Silicon nanowire pressure sensor and its encapsulating structure based on huge piezoresistive characteristic | |
TWI591356B (en) | Method for testing a wafer-level chip scale packaged wafer | |
CN104062322A (en) | Humidity sensor and preparation method thereof | |
CN100445195C (en) | Low temperature airtightness packaging method for wafer level micro machinery device and photoelectric device | |
CN206847841U (en) | A kind of MEMS pressure sensor | |
CN103743439B (en) | There is the micro mechanical sensor of bilevel substrate | |
CN103744130B (en) | There is the micro mechanical sensor of three laminar substrates | |
CN106441254A (en) | MEMS three-axis inertial sensor based on thermal expansion airflow and processing method thereof | |
CN103743789B (en) | Mems sensor | |
CN202102009U (en) | Thermal wind speed and direction sensor based on Au-Au bonding process | |
CN109273398A (en) | A kind of smooth fixed device of wafer | |
CN101430341A (en) | Wafer level three axis thermal convection acceleration sensor | |
CN103968997B (en) | A kind of SOI micro Pirani gage and preparation method thereof | |
CN109244029A (en) | A kind of smooth fixed device of wafer | |
CN109273399A (en) | A kind of smooth fixed device of 12 inch wafers | |
Wang et al. | Ceramic film packaging for 2-D thermal wind sensor using LTCC technology | |
CN105668504B (en) | Infrared light supply and preparation method thereof | |
CN204705373U (en) | A kind of Multifunction Sensor based on carborundum films structure | |
CN104635033B (en) | Current error compensation method applied to motor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 Termination date: 20190103 |
|
CF01 | Termination of patent right due to non-payment of annual fee |