CN103741218A - Control device for crystal growth furnace cooling water flow adjustment - Google Patents
Control device for crystal growth furnace cooling water flow adjustment Download PDFInfo
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- CN103741218A CN103741218A CN201310669546.1A CN201310669546A CN103741218A CN 103741218 A CN103741218 A CN 103741218A CN 201310669546 A CN201310669546 A CN 201310669546A CN 103741218 A CN103741218 A CN 103741218A
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Abstract
A control device for crystal growth furnace cooling water flow adjustment is characterized by comprising a water storage body, flow monitoring devices and flow adjustment devices; a water storage cavity is arranged in the water storage body, the water storage body is provided with a total water inlet for communicating with the water storage cavity, and multiple water outlets all communicating with the water storage cavity, wherein each water outlet is provided with a flow monitoring device and a flow adjustment device; and by observing of the surface velocity of an alumina melt in a crystal growth furnace, the flow monitoring device and the flow adjustment device are controlled to achieve precise adjustment of the cooling water flow of each water outlet.
Description
Technical field
The present invention relates to a kind of water yield control set for adjusting, relate in particular to a kind of control device regulating for crystal growing furnace cooling water inflow.
Background technology
Photodiode (Light Emitting Diode, LED) have advantages of long, power consumption of life-span less, volume is little, response is fast, the anti-low temperature of antidetonation, pollute little etc. outstanding, its Application Areas is very wide, and market potential is huge, is called as " the mankind's again revolution in history of throwing light on." LED substrate material is to its Performance and Cost Modeling important relationship again; because sapphire crystal has unique crystalline network, excellent mechanical property, thermal property, optical property, mechanical property and chemical stability; become the ideal substrate material such as GaN semiconductor light-emitting-diode of practical application, account for the more than 90% of substrate market.In addition sapphire crystal is widely used in many fields of science and technology, national defence and civilian industry because of its good over-all properties.
In sapphire crystal growth process, along with constantly carrying out of crystallization, crystal weight increases, melt weight reduces, the final condition of its temperature field constantly changes, the requirement difference of the different steps of crystal growth to temperature, this just requires the water coolant for controlling each furnace chamber temperature field can be according to real-time condition fine adjustment.
At present, the water trap of legacy equipment configuration adopts extra heavy pipe to enter the simple structure that tubule goes out, the discharge that this structure cannot the each water outlet of fine adjustment.And then cause the inconsistent heat energy difference taken away of each symmetrical furnace chamber because of discharge, cause symmetrical longitudinal, the horizontal temperature thermograde of crystal growth to change, can not guarantee the symmetry of a crystal growth temperature thermograde, thereby cannot accurately control crystal growing process, be difficult to guarantee the stable of crystal growth quality.
Summary of the invention
The object of the present invention is to provide a kind of structure design simple, can monitor and regulate the control device of the discharge of each water outlet, thereby keep the symmetry of longitudinal, the horizontal temperature thermograde of crystal growth.
To achieve these goals, a kind of control device regulating for crystal growing furnace cooling water inflow provided by the invention comprises a water storage tank, flow monitoring equipment and flow regulating equipment.In described water storage tank, establish water storage cavity, described water storage tank is established total water inlet and multiple water outlet of all connecting water storage cavity of a connection water storage cavity, and described each water outlet is all equiped with flow monitoring equipment and flow regulating equipment; By the observation of the surface velocity at molten night of the aluminum oxide in crystal growing furnace, control flow monitoring equipment and flow regulating equipment, to reach the fine adjustment of the cooling water flow to each water outlet.
As preferably, described water storage tank is circular disk body, and total water inlet is positioned at disk upper surface center, and the distance of each water outlet is all identical to the distance of center water-in, can make the water outlet hydraulic pressure of each water outlet all identical, there will not be hydraulic pressure pressure drop difference.
As preferably, described flow monitoring equipment is stream of electrons measuring device, discharge that can the each water outlet of Real-Time Monitoring.
As preferably, described flow regulating equipment is Water flow adjusting valve, can adjust the discharge of each water outlet, and the cooling water inflow that the waterway of each symmetry is obtained is identical, thereby has guaranteed the symmetry of crystal growth temperature gradient.
Adopt a kind of control device regulating for crystal growing furnace cooling water inflow of the present invention in actual sapphire crystal growth process, can regulate according to method as described below the flow of water coolant:
In the material stage, the discharge of each water outlet can be controlled in 150~160ml/s, and this stage keeps discharge less, reduces the heat that recirculated cooling water is taken away, and the temperature in furnace chamber is raise, and material efficiency gets a promotion.
In the shouldering stage, all cross and judge that the growth tendency of crystal shouldering in stove regulates to reach accurately symmetry of a temperature thermograde to the each independent branch road of furnace chamber.
At annealing stage, the discharge of each water outlet can be controlled in 130~150ml/s, and this stage crystal has been grown, and in stove, temperature reduces, and discharge is capable of reducing energy consumption after reducing.
In sum, a kind of water trap regulating for crystal growing furnace cooling water inflow provided by the invention, the cooling water flow that can regulate in real time each furnace chamber in crystal growing process according to different steps, makes the ability of regulation and control of a furnace chamber inside temperature temperature obtain reinforcement; Improved the yield rate of large size sapphire crystal, also improved stability and the repeatability of technique, the industrialization that is conducive to large size sapphire crystal is produced.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention
Embodiment
Below enumerate in conjunction with the drawings a specific embodiment, in order to describe content of the present invention and details in detail.
Refer to Fig. 1, a kind of control device for the cooling adjusting of crystal growing furnace provided by the invention, comprise a water storage tank 1, flow monitoring equipment 2 and flow regulating equipment 3, flow monitoring equipment 2 is selected stream of electrons measuring device 2, and flow regulating equipment is selected Water flow adjusting valve 3.Described water storage tank 1 is selected stainless steel circular disk body 1, in described stainless steel circular disk body 1, establishes water storage cavity, and the concrete size of described stainless steel circular disk body is for example: radius is that 250mm, thickness are 150mm, the thick 3mm of stainless material.At the center of stainless steel circular disk body 1, offer the total water inlet 11 of connecting water storage cavity, for connecting burner hearth inlet channel, so that extraneous water can inject water storage cavity by total water inlet 11, described total water inlet 11 is for example that circular port and radius are 56mm.Described stainless steel circular discs 1 surrounding is offered the water outlet 12 of multiple connection water storage cavitys, for example, be 10, and described each water outlet 12 is all identical to the distance of total water inlet 11, can guarantee that water outlet hydraulic pressure is all identical, there will not be hydraulic pressure pressure drop difference.Each water outlet is all installed and is provided with stream of electrons measuring device 2 and Water flow adjusting valve 3, the discharge of each water outlet 12 of stream of electrons measuring device 2 Real-Time Monitorings, Water flow adjusting valve 3 is accurately adjusted discharge, and a temperature temperature for the furnace chamber of each symmetry can be adjusted according to actual needs in real time.
Producing the master operation of sapphire crystal comprises: the stages such as material, shouldering, isometrical, annealing, in each process of growth, to temperature, require all different, in order to reach the real-time object that regulates a temperature temperature, can be by the observation of aluminum oxide surface velocity at molten night being regulated in real time to the discharge of each water-in 12.Concrete control method is:
In the material stage, the discharge of each water outlet 12 can be controlled in 150~160ml/s, and the heat of taking away to reduce recirculated cooling water raises the temperature in furnace chamber, and material efficiency gets a promotion.
In the shouldering stage, by judging the growth tendency of crystal shouldering in stove, then control according to this stream of electrons measuring device 2 and Water flow adjusting valve 3, control the water flow of water outlet, the each independent branch road of furnace chamber is regulated to reach a temperature thermograde accurately symmetrical.
At annealing stage, the discharge that each water outlet is 12 can be controlled in 130~150ml/s, and crystal annealing stage crystal has been grown, and in stove, temperature reduces, and discharge is capable of reducing energy consumption after reducing.
Above embodiment is only used for the explanation principle of the invention, the not only embodiment of the present invention.Above-described embodiment should not be considered as limiting the scope of the invention.Those skilled in the art, when reading and having understood aforementioned detailed description, can modify and change.Concrete protection domain should be as the criterion with claims.
Claims (5)
1. the control device regulating for crystal growing furnace cooling water inflow, is characterized in that, comprises a water storage tank, flow monitoring equipment and flow regulating equipment; In described water storage tank, establish water storage cavity, described water storage tank is established total water inlet and multiple water outlet of all connecting water storage cavity of a connection water storage cavity, and described each water outlet is all equiped with flow monitoring equipment and flow regulating equipment; By the observation of the surface velocity at molten night of the aluminum oxide in crystal growing furnace, control flow monitoring equipment and flow regulating equipment, to reach the fine adjustment of the cooling water flow to each water outlet.
2. a kind of control device regulating for crystal growing furnace cooling water inflow according to claim 1, it is characterized in that, described water storage tank is circular disk body, total water inlet is positioned at disk upper surface center, the week that each water outlet is located at disk, upwards and each water outlet was identical to the distance of center water-in.
3. a kind of control device regulating for crystal growing furnace cooling water inflow according to claim 1, is characterized in that, described flow monitoring equipment is stream of electrons measuring device.
4. a kind of control device regulating for crystal growing furnace cooling water inflow according to claim 1, is characterized in that, described flow regulating equipment is Water flow adjusting valve.
5. a method that adopts in claim 1 to 4 a kind of control device regulating for crystal growing furnace cooling water inflow described in any one to control sapphire crystal growth temperature field temperature:
In the material stage, the discharge of each water outlet is controlled at 150~160ml/s;
In the shouldering stage, by judging the growth tendency of crystal shouldering in stove, control described flow monitoring equipment and flow regulating equipment, accurately symmetrical the each independent branch road of furnace chamber is regulated to reach a temperature thermograde;
At annealing stage, the discharge of each water outlet can be controlled in 130~150ml/s, and this stage crystal has been grown, and in stove, temperature reduces, and discharge is capable of reducing energy consumption after reducing.
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CN201310669546.1A CN103741218B (en) | 2013-12-10 | 2013-12-10 | A kind of control device regulated for crystal growing furnace cooling water inflow |
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CN201310669546.1A CN103741218B (en) | 2013-12-10 | 2013-12-10 | A kind of control device regulated for crystal growing furnace cooling water inflow |
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CN103741218B CN103741218B (en) | 2016-03-30 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104328486A (en) * | 2014-11-22 | 2015-02-04 | 刘瑜 | Cooling water pressure closed-loop control system of kyropoulos sapphire crystal growth equipment |
CN110109487A (en) * | 2019-04-22 | 2019-08-09 | 广东凤铝铝业有限公司 | A kind of Intelligence Cooling System |
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US20030183163A1 (en) * | 2000-09-26 | 2003-10-02 | Takayuki Kubo | Crystal growing apparatus |
CN201179525Y (en) * | 2008-03-28 | 2009-01-14 | 重庆钢铁(集团)有限责任公司 | Roll barrel cooling spraying tube |
CN101509147A (en) * | 2008-02-15 | 2009-08-19 | 绿能科技股份有限公司 | Crystal growth furnace body cooling structure |
KR100964356B1 (en) * | 2009-09-28 | 2010-06-17 | 퀄리플로나라테크 주식회사 | Silicon ingot grower and body for vacuum chamber of silicon ingot grower |
CN102234837A (en) * | 2011-08-01 | 2011-11-09 | 浙江晶盛机电股份有限公司 | Closed cooling system of gas cooled polysilicon ingot furnace |
CN203653758U (en) * | 2013-12-10 | 2014-06-18 | 福建鑫晶精密刚玉科技有限公司 | Control device for regulating amount of cooling water in crystal growth furnace |
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2013
- 2013-12-10 CN CN201310669546.1A patent/CN103741218B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030183163A1 (en) * | 2000-09-26 | 2003-10-02 | Takayuki Kubo | Crystal growing apparatus |
CN101509147A (en) * | 2008-02-15 | 2009-08-19 | 绿能科技股份有限公司 | Crystal growth furnace body cooling structure |
CN201179525Y (en) * | 2008-03-28 | 2009-01-14 | 重庆钢铁(集团)有限责任公司 | Roll barrel cooling spraying tube |
KR100964356B1 (en) * | 2009-09-28 | 2010-06-17 | 퀄리플로나라테크 주식회사 | Silicon ingot grower and body for vacuum chamber of silicon ingot grower |
CN102234837A (en) * | 2011-08-01 | 2011-11-09 | 浙江晶盛机电股份有限公司 | Closed cooling system of gas cooled polysilicon ingot furnace |
CN203653758U (en) * | 2013-12-10 | 2014-06-18 | 福建鑫晶精密刚玉科技有限公司 | Control device for regulating amount of cooling water in crystal growth furnace |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104328486A (en) * | 2014-11-22 | 2015-02-04 | 刘瑜 | Cooling water pressure closed-loop control system of kyropoulos sapphire crystal growth equipment |
CN104328486B (en) * | 2014-11-22 | 2016-10-19 | 宁波晶工晶体科技有限公司 | A kind of cooling water pressure closed-loop control system of kyropoulos sapphire crystallization equipment |
CN110109487A (en) * | 2019-04-22 | 2019-08-09 | 广东凤铝铝业有限公司 | A kind of Intelligence Cooling System |
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