CN104389019A - Process robotic system for growing sapphire crystal by virtue of kyropous method - Google Patents
Process robotic system for growing sapphire crystal by virtue of kyropous method Download PDFInfo
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- CN104389019A CN104389019A CN201410647025.0A CN201410647025A CN104389019A CN 104389019 A CN104389019 A CN 104389019A CN 201410647025 A CN201410647025 A CN 201410647025A CN 104389019 A CN104389019 A CN 104389019A
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- CN
- China
- Prior art keywords
- crystal
- processing parameter
- crystal growth
- reliability
- sapphire crystal
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
Abstract
The invention relates to a process robotic system for growing sapphire crystal by virtue of kyropous method. The process robotic system is provided with a process parameter collection system, a process course simulation system, a process reliability analysis system and a process parameter improvement system, wherein the process parameter collection system is used for detecting data from a sensor so as to form process parameters representing growth states of the crystal; the process course simulation system is provided with a growing crystal core algorithm formed by a crystal growth theory and is used for representing growth states of the crystal according to the process parameters collected by the process parameter collection system; the process reliability analysis system is a system for determining the completion status of the entire process based on the growth states of the crystal and process parameters; and the process parameter improvement system is a system for immediately adjusting the process parameters based on results from the process reliability analysis system. The process robotic system is a robot program having simple self-learning and analytic effects; by the robot program, the reliability of the system and the reliability of the system and the accuracy degree of the process simulation can be continuously improved and the yield rate of the crystal is ensured to the greatest extent.
Description
Technical field
The present invention relates to sapphire crystal (alumina single crystal) growing technology field, especially a kind of process machinery robot system of kyropoulos sapphire crystal growth.
Background technology
Sapphire crystal consist of aluminum oxide (Al
2o
3), be combined into covalent linkage pattern by three Sauerstoffatoms and two aluminium atoms, its crystalline structure is hexagonal lattice structure.Features such as (2045 DEG C) that sapphire crystal has the high velocity of sound, high temperature resistant, anticorrosive, high rigidity, high light transmittance, fusing point are high is a kind of purposes photoelectric material quite widely.It is very wide that optics due to sapphire crystal penetrates band, all has good light transmission from near-ultraviolet light (190nm) to middle infrared (Mid-IR), is therefore used in a large number on optical element, infrared facility, high intensity laser beam lens materials and mask material.Another important use sapphire is the substrate material of epitaxy of gallium nitride (GaN), because sapphire (monocrystalline Al
2o
3) lattice constant mismatch rate between the race's deposit film of C face III-V and II-VI is little, meet resistant to elevated temperatures requirement in GaN epitaxy technique simultaneously, make sapphire wafer become the critical material making white/indigo plant/green light LED.But require high for its stress of sapphire crystal of optics and LED substrate and defect, although there is the sapphire growth technology such as crystal pulling method, heat-exchanging method, Bridgman method and reverse mould method since over half a century successively, technology still kyropoulos or the KY method of growing large-size low-stress zero defect sapphire crystal the most ripe at present.
The general technology of kyropoulos growing sapphire is the seed crystal and melt contacts of catching a cold one, if the temperature at interface is lower than zero pour, then seed crystal starts growth, constantly grow up to make crystal, just need the temperature reducing melt gradually, simultaneously rotating crystal, to improve the temperature distribution of melt.Also slowly (or stage by stage) can carry crystal, to expand radiating surface.Crystal does not contact with sidewall of crucible in process of growth or at the end of growth, this greatly reduces the stress of crystal.
Because the temperatures as high of kyropoulos growing sapphire 2100 degrees Celsius, and thermograde is less, and current temp measuring method is all difficult to reach its requirement.And judge that melt temperature is the basic demand of seeding, by visual inspection and via a large amount of experiences, sapphire crystal process can be judged, thereby produce the pure experience crystal growth pattern judged based on naked eyes.Owing to lacking enough slip-stick artists by the crystal growth of experience, the yield rate of kyropoulos and production capacity all receive serious restriction.The invention provides a kind of kyropoulos sapphire process machinery robot system of alternative Artificial Growth, can adjust parameter at any time according to growing state, and the quality of energy automatic decision crystal growth processes.This will effectively improve yield rate and the production capacity of current kyropoulos growing sapphire crystal.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is the process machinery robot system providing a kind of kyropoulos sapphire crystal growth, not only can realize automatic seeding, all right Automatic Optimal processing parameter, to reach the maximization of the sapphire crystal automatic seeding process success ratio under mass production conditions.
(2) technical scheme
For achieving the above object, the invention provides a kind of process machinery robot system of kyropoulos sapphire crystal growth, four integral parts are set: processing parameter acquisition system, process simulator, reliability of technology analytical system and processing parameter improved system.
Described processing parameter acquisition system is the data of detecting sensor, the processing parameter of forming reactions crystal growing phase, described sensor comprises the weight sensor of determining crystal quality, detects the cooling-water temperature sensor of the position transducer of crystal positions and detection temperature of cooling water.
Described process simulator arranges the long nucleus center algorithm that crystal growth theories is formed, and described long nucleus center algorithm reproduces the state of crystal growth according to the processing parameter that described processing parameter acquisition system obtains.
Described reliability of technology analytical system is state based on crystal growth and processing parameter, judges the system of whole technique performance.
Described processing parameter improved system is then the result based on described reliability of technology analytical system, described processing parameter is carried out to the program of instant adjustment.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
1, the process machinery robot system of kyropoulos sapphire crystal growth provided by the invention, be integrated with the efficient algorithm by crystal growth theories and experimental verification, therefore based on the crystal growth parameters obtained, process of growth effectively can be simulated, solve the problem that kyropoulos crystal growing process cannot be monitored, thus improve the yield rate of crystal.
2, the process machinery robot system of kyropoulos sapphire crystal growth provided by the invention, be integrated with the reliability criterion of crystal growth, and this criterion can adjust according to the result of crystal growth, system is made to be provided with certain learning capacity, thus give crystal growing process and control more accurately, thus continue to optimize the quality of crystal growth.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of sapphire crystal growing furnace;
Fig. 2 is the system chart of process machinery robot system.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 1 is the schematic diagram of the sapphire crystal growing furnace 1 of kyropoulos, be provided with and carry out central controlled computer, and the cooling-water temperature sensor of the weight sensor of determining crystal quality, the position transducer detecting crystal positions and detection temperature of cooling water has been installed, and regulate the shift mechanism of crystal positions and there is the heating system of power adjustable and the water pump of adjustable cooling water flow.Described computer installation process machinery robot system.
As shown in Figure 2, the schema of the process machinery robot system of kyropoulos sapphire crystal growth provided by the invention.Four integral parts are set: processing parameter acquisition system 2, process simulator 3, reliability of technology analytical system 4 and processing parameter improved system 5.
Described processing parameter acquisition system 2 is data of detecting sensor, the processing parameter of forming reactions crystal growing phase, and described sensor comprises the weight sensor, position transducer and the cooling-water temperature sensor that are arranged on described crystal growing furnace 1.
Described process simulator 3 is the long nucleus center algorithms formed according to crystal growth theories, and described long nucleus center algorithm reproduces the state of crystal growth according to the processing parameter that described processing parameter acquisition system 2 obtains.
Described reliability of technology analytical system 4 is state based on crystal growth and processing parameter, judges the system of whole technique performance.
Described processing parameter improved system 5 is the result based on described reliability of technology analytical system 4, described processing parameter is carried out to the program of instant adjustment.The adjustment of described processing parameter realizes by described shift mechanism, heating system and water pump.The position of described shift mechanism regulate crystal, the adjustable heating power of described heating system, thus the weight regulating crystal, the flow of the adjustable water coolant of described water pump, thus the temperature regulating water coolant.
Its concrete steps are as follows: after heating raw materials to material power, control is given described process machinery robot system, described processing parameter acquisition system 2 obtains crystal growth parameters, and pass to the simulation that described process simulator 3 carries out growth conditions, described reliability of technology analytical system 4 carries out fail-safe analysis according to growth conditions, and described processing parameter improved system 5 adjusts growth course according to analytical results, until adjustment result meets the requirement of Process flowchart, finally reach best growth control technique.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. a process machinery robot system for kyropoulos sapphire crystal growth, is characterized in that: arrange four integral parts: processing parameter acquisition system, process simulator, reliability of technology analytical system and processing parameter improved system.
2. the process machinery robot system of a kind of kyropoulos sapphire crystal growth according to claim 1, it is characterized in that: described processing parameter acquisition system is the data of detecting sensor, the processing parameter of forming reactions crystal growing phase, described sensor comprises the weight sensor of determining crystal quality, detects the cooling-water temperature sensor of the position transducer of crystal positions and detection temperature of cooling water.
3. the process machinery robot system of a kind of kyropoulos sapphire crystal growth according to claim 1, it is characterized in that: described process simulator arranges the long nucleus center algorithm that crystal growth theories is formed, described long nucleus center algorithm reproduces the state of crystal growth according to the processing parameter that described processing parameter acquisition system obtains.
4. the process machinery robot system of a kind of kyropoulos sapphire crystal growth according to claim 1, is characterized in that: described reliability of technology analytical system is state based on crystal growth and processing parameter, judges the system of whole technique performance.
5. the process machinery robot system of a kind of kyropoulos sapphire crystal growth according to claim 1, it is characterized in that: described processing parameter improved system is then the result based on described reliability of technology analytical system, described processing parameter is carried out to the program of instant adjustment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410647025.0A CN104389019A (en) | 2014-11-17 | 2014-11-17 | Process robotic system for growing sapphire crystal by virtue of kyropous method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410647025.0A CN104389019A (en) | 2014-11-17 | 2014-11-17 | Process robotic system for growing sapphire crystal by virtue of kyropous method |
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| Publication Number | Publication Date |
|---|---|
| CN104389019A true CN104389019A (en) | 2015-03-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410647025.0A Pending CN104389019A (en) | 2014-11-17 | 2014-11-17 | Process robotic system for growing sapphire crystal by virtue of kyropous method |
Country Status (1)
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|---|---|
| CN (1) | CN104389019A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104988577A (en) * | 2015-07-14 | 2015-10-21 | 福建汇晶光电科技有限公司 | Sapphire automatic control system and control method |
| CN113344439A (en) * | 2021-06-29 | 2021-09-03 | 蓝思系统集成有限公司 | Crystal growth control method, device and system and readable storage medium |
-
2014
- 2014-11-17 CN CN201410647025.0A patent/CN104389019A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| 张凤等: "RS-485总线控制下的蓝宝石晶体智能生长系统", 《自动化仪表》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104988577A (en) * | 2015-07-14 | 2015-10-21 | 福建汇晶光电科技有限公司 | Sapphire automatic control system and control method |
| CN113344439A (en) * | 2021-06-29 | 2021-09-03 | 蓝思系统集成有限公司 | Crystal growth control method, device and system and readable storage medium |
| CN113344439B (en) * | 2021-06-29 | 2024-04-26 | 蓝思系统集成有限公司 | Crystal growth control method, device and system and readable storage medium |
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Application publication date: 20150304 |
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