CN103740995A - Gallium-based liquid alloy material and preparation method thereof - Google Patents
Gallium-based liquid alloy material and preparation method thereof Download PDFInfo
- Publication number
- CN103740995A CN103740995A CN201310640216.XA CN201310640216A CN103740995A CN 103740995 A CN103740995 A CN 103740995A CN 201310640216 A CN201310640216 A CN 201310640216A CN 103740995 A CN103740995 A CN 103740995A
- Authority
- CN
- China
- Prior art keywords
- gallium
- alloy material
- bismuth
- tin
- zinc
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 38
- 239000000956 alloy Substances 0.000 title claims abstract description 30
- 239000007788 liquid Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 20
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 19
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052738 indium Inorganic materials 0.000 claims abstract description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 19
- 239000011701 zinc Substances 0.000 claims abstract description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052718 tin Inorganic materials 0.000 claims abstract description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 7
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- GYHNNYVSQQEPJS-IGMARMGPSA-N gallium-70 Chemical compound [70Ga] GYHNNYVSQQEPJS-IGMARMGPSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 101150051314 tin-10 gene Proteins 0.000 description 1
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- Manufacture And Refinement Of Metals (AREA)
Abstract
The invention discloses a gallium-based liquid alloy material and a preparation method thereof, the gallium-based liquid alloy material is composed of the following components: by mass, 70-85% of gallium, 10-15% of indium, 1-12% of tin, 2-6% of bismuth and 1-6% of zinc. In accordance with the ratio, the metal gallium is placed in a sealed flask, and then is placed in a water bath pot for heating to 50 DEG C, in a constant temperature state, the gallium in the flask is in a liquid state; then the indium, the tin, the bismuth and the zinc are put into the glass ware holding the liquid metal gallium; under argon protection, the indium, the tin, the bismuth and the zinc are stirred with a glass rod to completely melt into a liquid and evenly mix, and then the gallium-based liquid alloy material is obtained by thermal insulation for 10 minutes at 50 DEG C. The gallium-based liquid alloy material melting point is as low as about 1 DEG C. When in practical use, the radiator pipe cold end temperature can be as low as about-2 DEG C.
Description
Technical field
The present invention relates to a kind of gallium-base alloy material, specifically, relate to a kind of gallium base fluid state alloy material and preparation method thereof.
Background technology
Along with the raising day by day with people's living standard that develops rapidly of science and technology, the heat dissipation problem of various electronic devices and components also becomes clear day by day.The raising of current high performance computer integration, and user's quantity of high-end electronic product is striven rapidly length, the critical bottleneck that the efficiency of heat radiation has become the application of restriction high-tech product and improved.Liquid metal is the novel alloy medium that presents fluidised form under working temperature, owing to thering is high heat transfer coefficient (～80W/m K) in the pyramidal top of dispelling the heat.When traditional water-cooled and wind-cooling heat dissipating technology are tending towards the limit, liquid metal heat radiation technology can be used as a kind of revolutionary means and solves the more heat dissipation problem of high power density device.Relevant heat radiation product, not only can, for equipment such as computer chip, avionic device and power electronics, all deposit application widely for micro-, the naiio-electro-meclianical systems that develop rapidly in recent years.
As the liquid metal of using in scatterer, can drive in closed duct and flow by electromagnetic pump.The radiating pipe in loop can be with the aluminium with the high capacity of heat transmission, and copper and alloy thereof form, and liquid metal is around taken away heat fast from heating elements such as chips with flank speed under the driving of electromagnetic pump.The chip of the needs heat radiations such as computer is generally operational in more than 0 ℃.The fusing point of existing gallium-base alloy is as shown in table 1, and wherein the fusing point of multiple gallium-base alloy is higher than envrionment temperature.When electronics is worked at a lower temperature, the liquid metal in scatterer may be in coagulated state, and the heat-sinking capability of whole liquid metal heat radiation device can reduce greatly.Therefore the gallium-base alloy that, designing melting point is lower is to guarantee that liquid metal carries out the key of efficiently radiates heat at lower temperature.
Table 1
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of low-melting gallium base fluid state alloy material and preparation method thereof is provided.
To achieve these goals, the present invention adopts following technical scheme:
A gallium base fluid state alloy material, is comprised of following component and mass percent: gallium: 70-85%, indium: 10-15%, tin: 1-12%, bismuth: 2-6%, zinc: 1-6%.
Described material purity is: gallium >99%, indium >99%, tin >99%, bismuth >99%, zinc >99%.
The preparation method of above-mentioned gallium base fluid state alloy material, comprises the steps: according to proportioning, gallium to be put in airtight flask, and is placed in water-bath and is heated to 50 ℃, and under temperature constant state, in flask, gallium is in liquid state; Then indium, tin, bismuth and zinc are put in the glassware that takes up liquid metal gallium; Under argon shield, with glass stick, stir until indium, tin, bismuth and zinc mix completely as liquid, and mix, at 50 ℃, be incubated 10 minutes and make gallium-base alloy.
Compared with prior art, the present invention has following beneficial effect:
Gallium base liquid metal drives high efficiency and heat radiation by electromagnetic pump in liquid metal heat radiation organ pipe road, so the physics-chem characteristics such as fusing point of liquid metal have influence on the low temperature radiation performance of liquid metal heat radiation device and the Application Areas of this technology to a great extent.When liquid metal flows in the pipeline of sealing, at the temperature lowermost end of pipeline, must keep liquid state, no person will be solidified and be caused line clogging, the serious radiating effect that affects scatterer.While considering actual use, liquid metal solidification needs certain condensate depression.In addition, dynamic (dynamical) factor also makes liquid metal near 0 ℃, solidify the very slow of change.The gallium base fluid state alloy material of the present invention's design, fusing point is low to 1 ℃ of left and right.During actual use, the temperature of the scatterer pipeline cold junction lower 2 ℃ of left and right that can be as low as zero.
Embodiment
Embodiment 1
A gallium-base alloy material, formula following (mass percent): gallium 70%, indium 15%, tin 10%, bismuth 2%, zinc 3%.According to proportioning, gallium is put in airtight flask, and is placed in water-bath and is heated to 50 ℃, under temperature constant state, in flask, gallium is in liquid state; Then indium, tin, bismuth and zinc are put in the glassware that takes up liquid metal gallium; Under argon shield, with glass stick, stir until indium, tin, bismuth and zinc mix completely as liquid, and mix, at 50 ℃, be incubated 10 minutes and make gallium-base alloy, gained gallium-base alloy material, fusing point is 1 ℃ of left and right.
Embodiment 2
A gallium-base alloy material, formula following (mass percent): gallium 85%, indium 10%, tin 2%, bismuth 2%, zinc 1%.According to proportioning, gallium is put in airtight flask, and is placed in water-bath and is heated to 50 ℃, under temperature constant state, in flask, gallium is in liquid state; Then indium, tin, bismuth and zinc are put in the glassware that takes up liquid metal gallium; Under argon shield, with glass stick, stir until indium, tin, bismuth and zinc mix completely as liquid, and mix, at 50 ℃, be incubated 10 minutes and make gallium-base alloy, gained gallium-base alloy material, fusing point is 1 ℃ of left and right.
Embodiment 3
A gallium-base alloy material, formula following (mass percent): gallium 80%, indium 10%, tin 5%, bismuth 3%, zinc 2%.According to proportioning, gallium is put in airtight flask, and is placed in water-bath and is heated to 50 ℃, under temperature constant state, in flask, gallium is in liquid state; Then indium, tin, bismuth and zinc are put in the glassware that takes up liquid metal gallium; Under argon shield, with glass stick, stir until indium, tin, bismuth and zinc mix completely as liquid, and mix, at 50 ℃, be incubated 10 minutes and make gallium-base alloy, gained gallium-base alloy material, fusing point is 1 ℃ of left and right.
Claims (2)
1. a gallium base fluid state alloy material, is characterized in that being comprised of following component and mass percent: gallium: 70-85%, indium: 10-15%, tin: 1-12%, bismuth: 2-6%, zinc: 1-6%.
2. the preparation method of gallium base fluid state alloy material described in claim 1, is characterized in that comprising the steps: according to proportioning, gallium being put in airtight flask, and is placed in water-bath and is heated to 50 ℃, and under temperature constant state, in flask, gallium is in liquid state; Then indium, tin, bismuth and zinc are put in the glassware that takes up liquid metal gallium; Under argon shield, with glass stick, stir until indium, tin, bismuth and zinc mix completely as liquid, and mix, at 50 ℃, be incubated 10 minutes and make gallium-base alloy.
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| CN201310640216.XA CN103740995B (en) | 2013-12-04 | 2013-12-04 | A kind of gallium base fluid state alloy material and preparation method thereof |
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| CN201310640216.XA CN103740995B (en) | 2013-12-04 | 2013-12-04 | A kind of gallium base fluid state alloy material and preparation method thereof |
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| CN103740995B CN103740995B (en) | 2015-12-09 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104032199A (en) * | 2014-06-17 | 2014-09-10 | 北京依米康科技发展有限公司 | Low-melting-point liquid metal and preparation method and application thereof |
| CN104593656A (en) * | 2015-02-13 | 2015-05-06 | 杭州龙灿液态金属科技有限公司 | Ga-based liquid alloy with low-temperature fluidity, preparation process and thermometer |
| CN105088043A (en) * | 2015-09-17 | 2015-11-25 | 河北安耐哲新能源技术有限公司 | Liquid alloy, preparing method of liquid alloy and application of liquid alloy |
| CN105671394A (en) * | 2016-01-22 | 2016-06-15 | 上海洛丁森工业自动化设备有限公司 | Gallium liquid metal material and application of gallium liquid metal material to teletransmission pressure and different pressure transmitter |
| CN105970058A (en) * | 2016-07-21 | 2016-09-28 | 深圳市大材液态金属科技有限公司 | Novel liquid metal, and preparation method and application thereof |
| CN106636829A (en) * | 2015-11-04 | 2017-05-10 | 中国科学院理化技术研究所 | Self-packaging liquid metal pen and manufacturing method thereof |
| CN110042293A (en) * | 2019-06-04 | 2019-07-23 | 浙江大学 | A kind of novel low melting point alloy containing zinc |
| CN110184520A (en) * | 2019-05-30 | 2019-08-30 | 浙江大学 | A kind of highly conductive liquid of low-freezing high thermal conductivity and preparation method thereof |
| CN111534282A (en) * | 2019-12-16 | 2020-08-14 | 有研工程技术研究院有限公司 | Phase-change heat storage material with low melting point and high volume latent heat, and preparation method and application thereof |
| CN113153907A (en) * | 2021-05-27 | 2021-07-23 | 中国工程物理研究院机械制造工艺研究所 | Liquid metal bearing and vacuum motor |
| CN114959399A (en) * | 2022-05-30 | 2022-08-30 | 雷湘湘 | Low-thermal-resistance liquid metal and preparation method thereof |
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| JPS59116357A (en) * | 1982-12-22 | 1984-07-05 | Hitachi Ltd | Metal having low melting point |
| CN1089994A (en) * | 1993-07-27 | 1994-07-27 | 西南石油学院 | A kind of alloy and preparation method of energy replacement for mercury |
| CN103184381A (en) * | 2013-02-20 | 2013-07-03 | 中国科学院电工研究所 | Liquid gallium alloy and preparation method thereof |
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2013
- 2013-12-04 CN CN201310640216.XA patent/CN103740995B/en active Active
Patent Citations (3)
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| JPS59116357A (en) * | 1982-12-22 | 1984-07-05 | Hitachi Ltd | Metal having low melting point |
| CN1089994A (en) * | 1993-07-27 | 1994-07-27 | 西南石油学院 | A kind of alloy and preparation method of energy replacement for mercury |
| CN103184381A (en) * | 2013-02-20 | 2013-07-03 | 中国科学院电工研究所 | Liquid gallium alloy and preparation method thereof |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104032199A (en) * | 2014-06-17 | 2014-09-10 | 北京依米康科技发展有限公司 | Low-melting-point liquid metal and preparation method and application thereof |
| CN104593656B (en) * | 2015-02-13 | 2016-10-05 | 杭州龙灿液态金属科技有限公司 | A kind of gallio liquid alloy, preparation technology and clinical thermometer with low temperature flow |
| CN104593656A (en) * | 2015-02-13 | 2015-05-06 | 杭州龙灿液态金属科技有限公司 | Ga-based liquid alloy with low-temperature fluidity, preparation process and thermometer |
| CN106381434B (en) * | 2015-02-13 | 2018-03-30 | 杭州龙灿液态金属科技有限公司 | A kind of gallium base liquid alloy, preparation technology and clinical thermometer with low temperature flow |
| CN105088043A (en) * | 2015-09-17 | 2015-11-25 | 河北安耐哲新能源技术有限公司 | Liquid alloy, preparing method of liquid alloy and application of liquid alloy |
| CN106636829B (en) * | 2015-11-04 | 2018-04-06 | 中国科学院理化技术研究所 | Self-packaging liquid metal pen and manufacturing method thereof |
| CN106636829A (en) * | 2015-11-04 | 2017-05-10 | 中国科学院理化技术研究所 | Self-packaging liquid metal pen and manufacturing method thereof |
| CN105671394B (en) * | 2016-01-22 | 2018-02-23 | 上海洛丁森工业自动化设备有限公司 | Gallium liquid metal material and its application on teletransmission pressure, differential pressure transmitter |
| CN105671394A (en) * | 2016-01-22 | 2016-06-15 | 上海洛丁森工业自动化设备有限公司 | Gallium liquid metal material and application of gallium liquid metal material to teletransmission pressure and different pressure transmitter |
| CN105970058A (en) * | 2016-07-21 | 2016-09-28 | 深圳市大材液态金属科技有限公司 | Novel liquid metal, and preparation method and application thereof |
| CN110184520A (en) * | 2019-05-30 | 2019-08-30 | 浙江大学 | A kind of highly conductive liquid of low-freezing high thermal conductivity and preparation method thereof |
| CN110042293A (en) * | 2019-06-04 | 2019-07-23 | 浙江大学 | A kind of novel low melting point alloy containing zinc |
| CN111534282A (en) * | 2019-12-16 | 2020-08-14 | 有研工程技术研究院有限公司 | Phase-change heat storage material with low melting point and high volume latent heat, and preparation method and application thereof |
| CN113153907A (en) * | 2021-05-27 | 2021-07-23 | 中国工程物理研究院机械制造工艺研究所 | Liquid metal bearing and vacuum motor |
| CN114959399A (en) * | 2022-05-30 | 2022-08-30 | 雷湘湘 | Low-thermal-resistance liquid metal and preparation method thereof |
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| CN103740995B (en) | 2015-12-09 |
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Address after: 315016 Zhejiang Province, Ningbo city Haishu District Cuibai Road No. 89 Ningbo advanced manufacturing industry public platform building 15 room 1509 Applicant after: Cao Shuai Address before: 102209 No. 6, building 202, building 20, Holiday Garden, beautiful tree, Beiqijia Town, Changping District, Beijing Applicant before: Cao Shuai |
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Effective date of registration: 20161020 Address after: 315040 Zhejiang city of Ningbo province high tech Zone Juxian Road No. 1299 Building 9 floor, room 908 Patentee after: Ningbo Shinri branch metal materials Co. Ltd. Address before: 315016 Zhejiang Province, Ningbo city Haishu District Cuibai Road No. 89 Ningbo advanced manufacturing industry public platform building 15 room 1509 Patentee before: Cao Shuai |