CN103733347A - Photo-voltaic cell - Google Patents
Photo-voltaic cell Download PDFInfo
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- CN103733347A CN103733347A CN201280037273.2A CN201280037273A CN103733347A CN 103733347 A CN103733347 A CN 103733347A CN 201280037273 A CN201280037273 A CN 201280037273A CN 103733347 A CN103733347 A CN 103733347A
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- 239000004020 conductor Substances 0.000 claims abstract description 173
- 239000004065 semiconductor Substances 0.000 claims description 74
- 239000002800 charge carrier Substances 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000000725 suspension Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Abstract
A photo voltaic cell has base and emitter areas and contacts to these areas on the back surface. Additional floating conductors are provided on the front surface. The conductors extend on the front surface, from over the emitter areas on the back surface to over the base areas on the back surface. In this way, the effect of electrode shading is reduced.
Description
Technical field
The present invention relates to a kind of photovoltaic cell and a kind of method of manufacturing this battery.
Background technology
Due to various, it is desired the terminal of two electrodes for photovoltaic cell being arranged on the back of the body surface of this battery.This photovoltaic cell comprises semiconductor body, wherein, has the paired movably charge carrier of opposite charges each other and is excited.Terminal via semiconductor junction with between the two without semiconductor junction in the situation that, respectively via one or more emitter regions and one or more base region, collects and has the charge carrier of opposite charges each other respectively from this semiconductor body.Multiple realization back of the body endmost surface sub-connection to the method for the battery of emitter region and base region is known.
A solution relates to via hole (conductor by the hole in battery connects), so that the current feed being pooled to from front surface is carried on the back to lip-deep terminal to this.Metal electrode grid (grid) on this front surface can be used to collected electric current to conduct to via hole, and this via hole conducts to the terminal place for an electrode on this back of the body surface by the electric current of the charge carrier from a kind of polarity.Opposite electrode is connected to conductor, and described conductor collects from the electric current the charge carrier of opposite polarity from this back of the body surface.The example of the battery of this type is MWT battery (metal is around wearing type battery) and EWT battery (emitter is around wearing type battery).By this battery, it is possible utilizing one or more emitter regions to carry out the relatively large part on clad battery surface, and this is conducive to efficiency.
Another kind of solution, by collecting the electric current for two electrodes from being positioned at the lip-deep emitter region of the back of the body and base region, has been eliminated the needs to via hole.The example of such battery is called as IBC battery (interdigitated (interdigitated) back of the body contact battery).IBC battery have be positioned at the back of the body lip-deep for contacting two conductor grids of this emitter region and base region, each conductor grid has the fingers (finger) of series of parallel, and this fingers is connected to the central conductor (being called busbar) of traversing this fingers.The fingers bar of two grids extends parallel to each other, and the fingers of a grid and the fingers of another grid are staggered.In IBC battery, each fingers of grid collect in the space from the main body (bulk) of the battery with the direct adjacency of this fingers (position when being oriented back of the body surface and being positioned at lowest side flatly with respect to this battery, be positioned at fingers " on ") charge carrier and the charge carrier laterally arriving from the space of the main body of the fingers adjacency with another grid.Distance between the continuous fingers of grid is no more than several millimeters conventionally, to be limited in the loss on this transverse current: along with distance increases, increasing charge carrier will be recombinated before arriving fingers.The width of the emitter region under fingers is preferably greater than the width of base region, to raise the efficiency.In conventional IBC battery, the part that is launched the covering of territory, polar region on battery back of the body surface may be for example about 80 percent.IBC battery has needs complicated knot pattern and the problem of conductor grid (the little feature with adjacent area and many narrow fingers of opposite polarity), and this has just increased resistance and restructuring loss.Moreover current loss may appear under busbar.
DE102008044910 discloses a kind of solar cell, and base stage contact site and emitter contact site are upper in its back of the body surface, and the emitter layer of single suspension joint is positioned on its front surface.The emitter layer of this suspension joint contributes to improve restructuring performance.Restructuring more easily appears at surface.The emitter layer of this suspension joint is the semiconductor layer that is positioned at lower face, and this emitter layer provides and makes the charge carrier of at least a portion away from this surperficial space charge.Coexisting, this carries on the back lip-deep emitter region, and this semiconductor emission utmost point layer does not provide long-range horizontal conducting.Summary of the invention
Except other object, an object is to provide a kind of photovoltaic cell, wherein, can from carry on the back surface, collect efficiently the electric current of two polarity, and this back of the body surface has wider than IBC battery and/or carries on the back more easily surface texture.
On the other hand, an object is to provide a kind of photovoltaic cell, wherein, can, in the situation that the loss under busbar is lower, collect the electric current of two polarity from carrying on the back surface.
According to an aspect, a kind of photovoltaic cell is provided, this photovoltaic cell comprises having the first surface that faces with each other and the semiconductor body of second surface.In use, this first surface and second surface will be respectively dorsad light energy source (as, the sun) and towards back of the body surface and the front surface of this photovoltaic cell of this light energy source.Conventionally this semiconductor body is a thin body, has a diameter much larger than thickness (width and/or length), and this first surface and second surface are separated by this thickness.This photovoltaic cell has:
The first charge carrier collection region on this first surface, it is coupled to the main body of this semiconductor body via the semiconductor junction in this semiconductor body or on this semiconductor body;
The second charge carrier collection region on this first surface, in the situation that it is without semiconductor junction between, is coupled to the main body of this semiconductor body;
Conductor on this second surface, it is electrically coupled in this first charge carrier collection region and the second charge carrier collection region by this semiconductor body, and at least substantially without any other current path from described conductor to described first charge carrier collection region and second charge carrier collection region in parallel with described semiconductor body electricity, described conductor from this second surface, the first area relative with this first charge carrier collection region extend on this second surface, the second area relative with this second charge carrier collection region.As used at this, " relative " represents, when edge is watched perpendicular to surperficial direction, be positioned at or comprise two-dimensional position identical on this first surface and second surface.Similarly, if be flatly oriented in the situation of the downside of this photovoltaic cell as this back of the body surface, if when edge is watched perpendicular to this surperficial direction, the position with the two-dimensional position identical with this lip-deep position will be called as " below " or " top " in this lip-deep this position.
Therefore, a kind of photovoltaic cell, is provided with base stage contact site and emitter contact site on its back of the body surface, and this base stage contact site and emitter contact site collect optical excitation formula charge carrier from semiconductor body.Conductor on this front surface by most charge carriers of optical excitation formula for example, from being positioned in the main body of semiconductor body of the position in the first charge carrier collection region (, emitter region and/or the region that comprises busbar) lateral transport to the main body that is arranged in the semiconductor body of the position in the second charge carrier collection region.This has just reduced restructuring loss, and has eliminated the restriction on the width of the first charge carrier collection region (surpassing this width, the current saturation that can collect).This for example makes, by utilizing the first wider charge carrier collection region (emitter region and/or the region that comprises busbar) to come the raising on implementation efficiency to become possible.Can touch 96 percent emitter part (back of the body is launched the part that territory, polar region covers on surface).
Conductor is formed in this lip-deep conductor structure, fingers structure for example, that is, and elongated linear structure.The first area of each in the plurality of conductor from second surface extends on the second area on this second surface.These conductors can comprise metallic conductor, for example, and silver-colored crystal grain.
In one embodiment, the first charge carrier collection region is that emitter region and the second charge carrier collection region are base region, semiconductor junction with a pattern (wherein, this semiconductor junction is arranged in the region corresponding to emitter region, and this semiconductor junction is not arranged in the region corresponding to base region) be arranged on this first surface or in this first surface.In this way, it is possible utilizing wider emitter region to obtain higher efficiency.
In one embodiment, base region comprises along the conductor material of one group of parallel base line, and emitter region is between paired continuous parallel base line, and the conductor on second surface laterally extends to emitter region from parallel base line.This just provides a kind of high efficiency simple layout that has.
In one embodiment, the distance between at least one pair of continuous parallel base line is at least ten millimeters.From the distance of the centre between these parallel base line, almost do not have most charge carriers can in the situation that there is no conductor, arrive base stage conductor.
In one embodiment, conductor comprises the parallel conductor lines of extending across parallel base line.This provides efficient transmission.In one embodiment, the distance between at least one pair of continuous conductor lines is less than five millimeters.Under this distance, at least sizable part of most charge carriers can arrive this conductor.For example, this can extend to by the opposite from least one pair of continuous parallel base line parallel conductor line to the opposite of the emitter region between parallel base line at this and realize, and this parallel conductor line is continuously between this is to parallel base line.In other embodiments, between the parallel conductor lines of each base line of parallel base line being extended from this, can reserve the gap that is less than five millimeters.In other embodiments, from this, the first base line to parallel base line extends to this and can reserve a gap between to the parallel conductor lines of the second base line of parallel base line.
More generally, conductor can be arranged with arbitrary graphic pattern, and wherein, the distance of nearest conductor is to be no more than five millimeters in from the arbitrfary point relative with emitter region on this second surface to conductor.
In one embodiment, the first charge carrier collection region on this first surface comprises busbar region and from this busbar region branch emitter fingers region out, the second charge carrier collection region on this first surface comprises the base region between paired continuous emitter fingers region, and extend on the second surface relative with base region in this emitter fingers region.In this way, the efficiency losses causing due to the restructuring on busbar can be lowered.
Accompanying drawing explanation
By using the following drawings, it is obvious that these and other object and favourable aspect will become in the description of exemplary embodiment.
Fig. 1 shows a kind of back of the body surface 10 of photovoltaic cell;
Fig. 2 shows the front surface 20 of this photovoltaic cell;
Fig. 3 shows the cross section through this photovoltaic cell;
Fig. 4 shows back of the body surface;
Fig. 5 shows front surface;
Fig. 6 shows that electric current is with respect to the chart of emitter width.
Embodiment
Figure l schematically shows a kind of back of the body surface 10 of photovoltaic cell, and this back of the body is surperficial comprises the first group of parallel conductor lines and second group of parallel conductor lines 12,14 that forms respectively emitter region and base region.At work, the output current of this photovoltaic cell flows through first group of parallel conductor lines and second group of parallel conductor lines 12,14.Although first group of parallel conductor lines and second group of parallel conductor lines 12,14 are only shown, for example should be understood that, from extended extra other the conductor structure (one or more busbar and/or fingers) of these conductor lines and can exist.Although the conductor lines 12 that a series of conductor lines is shown as with same group starts and finishes, but should understand, a kind ofly with conductor lines on the same group 12,14 not, start to be alternately utilized with the series finishing, the number of the conductor lines in this first group and second group is equal to each other.Be stressed that, this figure is schematic: this battery can have large diameter (width and/or length), to allow more conductor lines repeatedly.The thickness of this battery is much smaller than this diameter, and this first surface and second surface are spaced apart with this thickness.Edge on the periphery of this battery will can not be called as the surface of this battery.
The standoff distance that continuously parallel conductor lines 14 can more than ten millimeter (and being for example tens of millimeters) is arranged.The parallel conductor lines 12 of the first subclass is crisscross arranged with the parallel conductor lines 14 of interdigital mode and the second subclass.The conductor lines 12 of the first subclass covers in a part for the distance between the paired continuous parallel conductor lines 14 of the second subclass, and this part is wide more than the width of the conductor lines 14 of the second subclass.For example, a kind of photovoltaic cell is shown as the wherein conductor lines 12 of the first subclass and is present on the almost whole region between paired continuous parallel conductor lines 14, that is do not having adjacent and be parallel under the situation of conductor material of parallel conductor lines 14, on the whole region between spacer bar.However, it should be understood that other layout also can be utilized: for example, the conductor lines 12 of the first subclass is implemented as grid or the network of conductor lines in can the region between in pairs continuous parallel conductor lines 14.
Fig. 2 shows the front surface 20 of this photovoltaic cell, and this front surface comprises the 3rd group of parallel conductor lines 22.The position of the parallel conductor lines 12,14 on back of the body surface represents by a dotted line, although these conductor lines are not present on front surface 20 certainly.In the embodiment showing at this figure, the 3rd group of conductor lines 22 is perpendicular to first group and second group of conductor lines 12,14 and arrange.More generally, the 3rd group of conductor lines 22 can arrange across (that is, nonparallel) these conductor lines 12,14, and is preferably the angle between 30 to 150 degree and arranges.The 3rd group of conductor lines 22 also needs not be straight or isolates each other: its can be crooked, branch or form a network.More generally, conductor lines 22 is arranged on from one or more by being positioned at region that the lip-deep first group of conductor lines of the back of the body 12 cover to one or more front surfaces by being positioned at this and carrying on the back the region that lip-deep second group of conductor lines 14 cover.Preferably, the distance between the continuous conductor lines 22 of this front surface is less than five millimeters, and is preferably less than two millimeters.
Fig. 3 shows the cross section through this photovoltaic cell, and this cross section comprises semiconductor body 30.This semiconductor body 30 has back of the body surface 10 and front surface 20, the conductor lines 12,14 of first group and second group is illustrated on this back of the body surface 10 with cross section (plane of this cross section is traversed the length direction of these conductor lines 12,14), and the conductor lines 22 of the 3rd group is illustrated in (length direction of this conductor lines 22 is positioned in the plane of cross section) on this front surface 20.Semiconductor body 30 can have the thickness of 160 microns between this front surface and back of the body surface 10,20, and preferably can have the thickness in the scope of 10 to 500 microns.
For example, emitter region 32 provides the regional area of the doping of the second conduction type (for example, if semiconductor body 30 is N-shaped, this second conduction type is p-type, and vice versa) to be illustrated as being provided with in semiconductor body 30.This region for example can make or (for example make on this back of the body surface by a mask by passing diffusion or the implantation of the dopant material of the mask that exposes emitter region, by deposition) the newly-increased emitter region through doping makes or by diffusion in superficial layer or implant dopant material or make newly-increased superficial layer, optionally removes subsequently the part of this layer outside emitter region and make.In another example, emitter region 32 is deposited on the top of semiconductor body 30, forms crystalline silicon/non crystal heterogeneous agglomeration.First group of conductor lines 12 can be equally wide or narrower than emitter region 32 with emitter region 32.Although show, form the conductor lines 12 covering continuously, but should understand, as an alternative, each of conductor lines 12 or a part for example can be patterned as central fingers and extend side fingers from this central authorities' fingers, become a kind of complications or serpentine pattern etc.
Second group of conductor lines 14 on this back of the body surface 10 can be coupled to the main body of semiconductor body 30 without semiconductor junction in the situation that.This second group of conductor lines 14 can be identical by the main body with semiconductor body 30 the enhancement mode doping of conduction type or the amorphous silicon of deposition (being called as BSF, back of the body surface field region) be arranged in this back of the body surface 10 (not shown) in region other on this back of the body surperficial 10 maybe.
The 3rd group of conductor lines 22 on this front surface 20 is with respect to the conductor lines the 12, the 14th on this back of the body surface 10, " suspension joint ", that is except the main body of this semiconductor body 30, between conductor lines 22 and conductor lines 12,14 on back of the body surface 10, do not exist other to be electrically connected to, or at least do not have electrically significant connection.The 3rd group of conductor lines 22 is not electrically connected in any first group and the second group of conductor lines 12,14 on this back of the body surperficial 10 by the conductor material through in the via hole of semiconductor body.The via hole through semiconductor body 30 from front surface 20 to back of the body surface 10 can be completely non-existent.In addition, the 3rd group of different conductor lines 22 be " suspension joint " relative to each other, that is except the main body via this semiconductor body 30, conductor lines 22 does not have other mutual electrical connection or at least electrically not significant connection.Surface 20 can be equipped with a front surface electric field, to strengthen surface passivation and horizontal conductivity.Can adulterate at 22 times effects on surfaces 20 of these conductor lines, to reduce contact resistance.Conventional structure, for example texture and antireflection and/or surface passivation coating may reside on surface 20, but for the sake of clarity, they are not demonstrated out.
At work, the free charge carrier in photo-excited semiconductor body 30 and each other the net current of the charge carrier of films of opposite conductivity flow to respectively first group and second group of conductor lines 12,14 on back of the body surface 10.The orientation of a battery that is flatly positioned at the lowest side of battery according to back of the body surface 10 is described in this running, should be understood that this orientation is illustrative object, although in running, this battery can be by differently directed.In first group and second group of conductor lines 12,14 (that is, contiguous this first group and second group of conductor lines), charge carrier directly flows to this conductor lines 12,14.The 3rd group of conductor lines 22 contribute to provide the region lateral transport of (that is, being close to this emitter region) on the emitter region of most of charge carriers from semiconductor body 30 to be positioned on front surface 20 with second group of position that conductor lines 14 is relative.
If there is not the 3rd group of conductor lines 22, only can be separated by from the position with second group of conductor lines 14 lateral separation of several millimeters of most charge carriers of being excited in a large number arrives this second group of conductor lines 14.At first group of this emitter of conductor lines 12() on most charge carriers of being excited have to laterally towards this second group of conductor lines 14(base stage) advance.This just causes the extra polarization on emitter.The charge carrier of transverse shifting represents a transverse current effectively, and this electric current meets the relatively high resistance (because this semiconductor body is quite thin and have low electric conductivity) being formed by this semiconductor body.Therefore, this is become according to the cumulative forward bias in lateral attitude, and this just increases the loss being caused by restructuring, and can from photovoltaic cell, not contribute net current.
Fig. 6 is illustrated in the situation without conductor lines 22, for several cell thickness,, flow to second group of conductor lines 14(base stage) the simulation of effective current of the function as emitter width.Result is that the wafer that lohm.cm and thickness change between 50 to 1000 microns obtains for resistivity.Open circuit voltage (the V of being characterized as of this battery: 643mV
oc), 39.9mA/cm
2short-circuit current density J
sc, 376fA/cm
2diode current density constant (I0), 37.7mA/cm
2maximum power point current density (I
mpp), the maximum power point voltage (V of 563mV
mpp) and the outside series resistance of 1e-6 ohm.The restriction of dotted line indicating length scale, in this restriction place, due to the impact of transverse current, has lost 5% I
mpp.
Can find out, for most of actual thickness, when emitter has the width that surpasses 5 millimeters, this maximum power point current density can surpass half.If using 5% loss as the acceptable loss of maximum, the emitter with the width that surpasses 4 millimeters is unacceptable, even if be also like this for very thick semiconductor body.
In the situation that there is the 3rd group of conductor lines 22, most charge carriers of being excited in a large number arrive second group of conductor lines 14 from larger lateral separation.Semiconductor body on 22 pairs of emitters of the 3rd group of conductor lines is shunted effectively, has reduced the resistance of transverse current and has reduced the forward bias of tying.This makes in the situation that there is no large loss in efficiency, to use wider emitter region to become possible.
For the manufacture of the processing procedure itself with the photovoltaic cell of base stage contact site and emitter contact site, be known.This processing procedure comprises: on the back of the body surface 10 of Semiconductor substrate, make local emitter region, this emitter region comes by not having the other region separation of emitter; And apply the track with conductor material on this local emitter region and this other region.
For example, emitter region can be by add the doping with the second conduction type of the first conductivity type opposite of Semiconductor substrate in substrate, or the semi-conducting material by adding on this substrate with the second conduction type is made.In one embodiment, other region is preferably provided with back of the body surface field region, that is strengthens the region of this first conduction type of doping.This track can be used and burn (firing through) slurry alternatively dielectric layer deposition is also fired subsequently after step on back of the body surface, for example, by the pattern being printed to corresponding to first group of conductor lines and second group of conductor lines, apply.
Contrary with conventional processing procedure, this second group of conductor lines 14, the conductor lines 14 of collecting the net current of most charge carriers of being excited in the main body of this Semiconductor substrate can be coated in the distance that is greater than each other ten millimeters, in this case, if do not use the 3rd group of conductor lines 22, can make electric current collect is that efficiency is underground.
The processing procedure of manufacturing existing photovoltaic cell is also included on the front surface 20 of substrate and makes one group of conductor lines, and these conductor lines extend across the direction of the conductor lines 12,14 of this first kind and Second Type.For make the processing procedure of one group of conductor lines itself on this front surface 20, be also known.These conductor lines can comprise a kind of metallic conductor.This conductor lines can also fired dielectric layer deposition subsequently after step on front surface, uses and burns slurry alternatively, for example, by the pattern being printed to corresponding to the 3rd group of conductor lines 22, apply.For example, can use a kind of comprise silver-colored crystal grain can printing slurry.In the doping of the first conduction type can the be arranged on conductor lines 22 times semiconductor body of (that is, adjacent with this conductor lines 22) or on this semiconductor body, so that low contact resistance to be provided.
Although shown a kind of layout on the back of the body surface of photovoltaic cell with straight parallel conductor line, should be understood that as an alternative, can use crooked conductor lines or by many line segments or interruption or discrete line each other in non-zero angle.In addition, in this case, the 3rd group of conductor lines 22 can be arranged on from the front surface up to the one or more regions that covered by second group of conductor lines 14 by one or more regions of first group of conductor lines, 12 coverings.
Fig. 4 shows the back of the body surface 10 of a kind of another embodiment of photovoltaic cell.Compare with the battery of Fig. 1, the conductor lines 14 of the second subset is spaced apart more closely, and preferably second group of continuous parallel conductor lines 14 can be positioned at the distance that is less than each other five millimeters.Therefore,, in the situation that not there is not the conductor lines 22 of the 3rd group across the parallel conductor line 12,14 of this first group and second group, can reach high efficiency.It is upper that the first busbar and the second busbar 16,18 are arranged on this back of the body surface, and be coupled respectively in first group of conductor lines and second group of conductor lines 12,14.
Fig. 5 shows the front surface of a kind of this embodiment of photovoltaic cell.The position of a busbar 16 that is coupled to first group of conductor lines is shown by dashed lines, but will of course be appreciated that, this conductor is not positioned on this front surface.On this front surface, be provided with the conductor lines 50 of an assisted group, the conductor lines 50 of this assisted group does not show from second group of conductor lines 14() on back of the body surface the position at place extend to the first busbar 16(and be connected to first group of conductor lines 12) region of the position at place on this back of the body surface.
At work, the conductor lines 50 of this assisted group by semiconductor body adjacent with the first busbar 16 (, on back of the body surface, 10 while being regarded as floor level surface, on the first busbar 16) most charge carriers of being excited are transferred to second group of position in conductor lines 14.If there is not the conductor lines 50 of this assisted group, a large amount of most charge carriers of being excited on this first busbar 16 will can not arrive this second group of conductor lines 14.Remaining charge carrier will be recombinated, and can from photovoltaic cell, not contribute net current.Under the situation of conductor lines 50 that has this assisted group, the position of most charge carriers of being excited from the first busbar 16 arrives second group of conductor lines 14 more.This has just improved the efficiency of photovoltaic cell.Except assisted group conductor lines 50 is applied to the diverse location with respect to the 3rd group of conductor lines 22, the manufacture process of the battery of this embodiment is similar to the manufacture process of battery of the embodiment of Fig. 1-3.Busbar can (for example, in the step of separating by dielectric layer and semiconductor) be applied on this battery in the step identical with second group of conductor lines 12,14 from first group or in different steps.
In one embodiment, the photovoltaic cell of the type in Fig. 1-3 also can have for the busbar of assisted group conductor lines 50 is set.In this case, the conductor lines 50 of the 3rd group of conductor lines 22 and this assisted group is all arranged on front surface, and the latter extends across the former from the relative position of the busbar 16 with being connected to this first group and second group conductor lines 12,14.In one embodiment, a plurality of conductor lines 50 of assisted group can be from the 3rd group of conductor lines 22Chu branch approaching most busbar 16 out.
Claims (10)
1. a photovoltaic cell, comprising:
There is the first surface that faces with each other and the semiconductor body of second surface;
The first charge carrier collection region on this first surface, it is coupled to the main body of this semiconductor body via the semiconductor junction in this semiconductor body or on this semiconductor body;
The second charge carrier collection region on this first surface, it is coupled to the main body of this semiconductor body without semiconductor junction in the situation that in centre;
Conductor on this second surface, it is electrically coupled to this first charge carrier collection region and the second charge carrier collection region by this semiconductor body, and without any other the current path from described conductor to described first charge carrier collection region and second charge carrier collection region in parallel with this semiconductor body electricity, described conductor extends to second area relative with this second charge carrier collection region on this second surface from first area relative with this first charge carrier collection region on this second surface at least substantially.
2. photovoltaic cell according to claim 1, wherein, described the first charge carrier collection region is that emitter region and described the second charge carrier collection region are base regions, this semiconductor junction is arranged on this first surface or in this first surface with a kind of pattern, wherein, described semiconductor junction is arranged in the region corresponding to described emitter region, and wherein, described semiconductor junction is not present in the region corresponding to described base region.
3. photovoltaic cell according to claim 2, wherein, described base region comprises along the conductor material of one group of parallel base line, and described emitter region is between paired continuous described parallel base line, and the described conductor on this second surface laterally extends to described emitter region from described parallel base line.
4. photovoltaic cell according to claim 3, wherein, the distance between at least one pair of continuous described parallel base line is at least ten millimeters.
5. according to the photovoltaic cell described in claim 3 to 4, wherein, the described conductor on this second surface comprises the parallel conductor lines of extending across parallel base line.
6. photovoltaic cell according to claim 5, wherein, the distance between at least one pair of continuous described conductor lines is less than five millimeters.
7. photovoltaic cell according to claim 5, wherein, described parallel conductor lines extends to opposite to the emitter region between parallel base line at this from the opposite of at least one pair of continuous parallel base line, and described parallel conductor lines is continuous between this is to parallel base line, or between the described parallel conductor lines that each base line the parallel base line right from this is extended or from this first base line to parallel base line extend to this to the described parallel conductor lines of the second base line of parallel base line between, reserve a gap that is less than five millimeters.
8. photovoltaic cell according to claim 2, wherein, described conductor is arranged with a kind of pattern, and wherein, the distance in from arbitrfary point relative with described emitter region on this second surface to described conductor nearest conductor is no more than five millimeters.
9. photovoltaic cell according to claim 1, wherein, described the first charge carrier collection region on this first surface comprises a busbar region and from this busbar region branch emitter fingers region out, described the second charge carrier collection region on this first surface comprises the base region between paired continuous described emitter fingers region, and extend on the described second surface relative with described base region in described emitter fingers region.
10. a method of manufacturing photovoltaic cell, comprising:
The body of the semi-conducting material with the first surface that faces with each other and second surface is provided;
This first surface place on this semiconductor body or in this semiconductor body produces the pattern and do not have with the region of semiconductor junction;
On this first surface, deposit the pattern of the first charge carrier collection region, described the first charge carrier collection region is coupled to the main body of this semiconductor body via the region with this semiconductor junction;
On this first surface, deposit the pattern of the second charge carrier collection region, described the second charge carrier collection region is coupled to the main body of this semiconductor body via the region without this semiconductor junction;
The pattern of deposited conductor on this second surface, at least substantially without any current path from described conductor to described first charge carrier collection region and second charge carrier collection region in parallel with this semiconductor body electricity, described conductor from this second surface, the first area relative with described the first charge carrier collection region extend on this second surface, the second area relative with described the second charge carrier collection region.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2006933 | 2011-06-14 | ||
| NL2006933A NL2006933C2 (en) | 2011-06-14 | 2011-06-14 | Photo-voltaic cell. |
| PCT/NL2012/050412 WO2012173474A2 (en) | 2011-06-14 | 2012-06-13 | Photo-voltaic cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103733347A true CN103733347A (en) | 2014-04-16 |
Family
ID=46397594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280037273.2A Pending CN103733347A (en) | 2011-06-14 | 2012-06-13 | Photo-voltaic cell |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2721641A2 (en) |
| CN (1) | CN103733347A (en) |
| NL (1) | NL2006933C2 (en) |
| TW (1) | TW201304165A (en) |
| WO (1) | WO2012173474A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516685A (en) * | 2016-06-17 | 2017-12-26 | 财团法人工业技术研究院 | Stacked solar cell module |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104425651B (en) * | 2013-09-09 | 2016-08-10 | 上海理想万里晖薄膜设备有限公司 | The technique that a kind of low temperature prepares the heterojunction solar battery of front non-grid |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101048875A (en) * | 2004-10-14 | 2007-10-03 | 太阳能研究所股份有限公司 | Method for the contact separation of electrically-conductinglayers on the back contacts of solar cells and corresponding solar cells |
| US20080092950A1 (en) * | 2004-11-02 | 2008-04-24 | Jimeno Cuesta Juan C | Solar Cell Structure With Rear Contacts and Current Collection by Transistor Effect, and Procedure for its Manufacture |
| WO2010022911A2 (en) * | 2008-08-30 | 2010-03-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solar cell and solar cell module with one-sided connections |
-
2011
- 2011-06-14 NL NL2006933A patent/NL2006933C2/en not_active IP Right Cessation
-
2012
- 2012-06-13 EP EP12730684.3A patent/EP2721641A2/en not_active Withdrawn
- 2012-06-13 CN CN201280037273.2A patent/CN103733347A/en active Pending
- 2012-06-13 WO PCT/NL2012/050412 patent/WO2012173474A2/en unknown
- 2012-06-14 TW TW101121291A patent/TW201304165A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101048875A (en) * | 2004-10-14 | 2007-10-03 | 太阳能研究所股份有限公司 | Method for the contact separation of electrically-conductinglayers on the back contacts of solar cells and corresponding solar cells |
| US20080092950A1 (en) * | 2004-11-02 | 2008-04-24 | Jimeno Cuesta Juan C | Solar Cell Structure With Rear Contacts and Current Collection by Transistor Effect, and Procedure for its Manufacture |
| WO2010022911A2 (en) * | 2008-08-30 | 2010-03-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solar cell and solar cell module with one-sided connections |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516685A (en) * | 2016-06-17 | 2017-12-26 | 财团法人工业技术研究院 | Stacked solar cell module |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2721641A2 (en) | 2014-04-23 |
| TW201304165A (en) | 2013-01-16 |
| WO2012173474A2 (en) | 2012-12-20 |
| WO2012173474A3 (en) | 2013-04-25 |
| NL2006933C2 (en) | 2012-12-17 |
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Application publication date: 20140416 |