CN103731101B - A kind of jamproof high frequency voltage controlled oscillator - Google Patents
A kind of jamproof high frequency voltage controlled oscillator Download PDFInfo
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- CN103731101B CN103731101B CN201210388585.XA CN201210388585A CN103731101B CN 103731101 B CN103731101 B CN 103731101B CN 201210388585 A CN201210388585 A CN 201210388585A CN 103731101 B CN103731101 B CN 103731101B
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Abstract
The present invention provides a kind of jamproof high frequency voltage controlled oscillator, including：Resonance circuit, negative resistance circuit, current source circuit and buffer circuit；Current source circuit is used for the electric current for producing voltage controlled oscillator work；Resonance circuit is used to produce oscillator signal；When resonance circuit uses inductance capacitance, electric capacity therein uses backward dioded；Negative resistance circuit produces negative resistance to offset the positive resistance of resonance circuit generation；The oscillator signal that buffer circuit is used to produce resonance circuit enters after row buffering to export, to be isolated with outer signals.The oscillator signal that resonance circuit in the high frequency voltage controlled oscillator that the present invention is provided is produced just is exported after buffer circuit enters row buffering, can so avoid outer signals from producing interference to oscillating circuit.Meanwhile, make voltage controlled oscillator that there is preferable phase noise performance using backward dioded in resonance circuit.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of jamproof high frequency voltage controlled oscillator.
Background technology
Voltage controlled oscillator (VCO, voltage-controlled oscillator) refers to output frequency and input control electricity
It is pressed with the oscillating circuit of corresponding relation.
Voltage controlled oscillator is one of very important basic circuit in integrated circuit, and the implementation of its circuit mainly has two
Kind, it is annular voltage controlled oscillator respectively（Ring VCO）And LC voltage controlled oscillator（LC VCO）.Voltage controlled oscillator is wide
The clock being applied to generally in microprocessor is synchronous（Clock Synchronization）Circuit；In wireless communication transceiver
Frequency synthesizer（Frequency Synthesizer）；Clock recovery circuitry in fiber optic communication（CRC, Clock Recovery
Circuit）And leggy sampling（Multi-phase Sampling）In circuit.
Frequency of oscillation is to weigh one of major parameter of voltage controlled oscillator performance.In most cases, voltage controlled oscillator
Frequency of oscillation is determined by the inductance and electric capacity in resonance circuit, but the parasitic capacitance of voltage controlled oscillator, particularly with it is humorous
The parasitic capacitance that the circuit that shakes is connected is also to influence voltage controlled oscillator to obtain the principal element compared with high oscillation frequency.
Referring to Fig. 1, the figure is the schematic diagram of voltage controlled oscillator of the prior art.
The resonance circuit of voltage controlled oscillator shown in Fig. 1 includes：Differential inductance L0, the first variable capacitance C1, second can power transformation
Hold C23, the 3rd electric capacity C3, the 4th electric capacity C4, first resistor R1, second resistance R2；
One end of the differential inductance L0 connects the negative output terminal of voltage controlled oscillator, and other end connection voltage controlled oscillator is just
Output end；
One end connection first node A of the first variable capacitance C1, the other end connects the first control voltage ATUNE；
One end connection Section Point B of the second variable capacitance C2, the other end connects first control voltage
ATUNE；
One end of the first resistor R1 connects the first node A, other end ground connection；
One end of the second resistance R2 connects the Section Point B, other end ground connection；
The two ends of the 3rd electric capacity C3 connect the negative output terminal of the first node A and voltage controlled oscillator respectively, described
4th electric capacity C4 two ends connect the positive output end of the Section Point B and voltage controlled oscillator respectively.
From the above analysis, the oscillator signal that the resonance circuit in voltage controlled oscillator of the prior art is produced is directly defeated
Go out, do not carried out with outer signals it is any isolate, so extraneous signal easily produces interference to oscillating circuit, so as to increase this
The noise of voltage controlled oscillator.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of jamproof high frequency voltage controlled oscillator, it is possible to increase high frequency pressure
The noiseproof feature of controlled oscillator.
The embodiment of the present invention provides a kind of jamproof high frequency voltage controlled oscillator, including：Resonance circuit, negative resistance circuit, electricity
Current source circuit and buffer circuit；
The resonance circuit, the oscillator signal for producing voltage controlled oscillator, the resonance circuit is that inductance and capacitance type is humorous
Shake circuit, and electric capacity therein uses backward dioded；
The negative resistance circuit, for producing negative resistance, to offset the positive resistance that the resonance circuit is produced；
The current source circuit, the electric current for producing voltage controlled oscillator work；The current source circuit includes the electricity
Current source circuit includes the 7th metal-oxide-semiconductor；The source ground of 7th metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor connects the negative resistance
Circuit；The grid of the metal-oxide-semiconductor connects the 3rd control voltage；
The buffer circuit, the oscillator signal for the resonance circuit to be produced enter after row buffering export, with the external world
Signal is isolated；The buffer circuit includes：3rd bipolar transistor, the 4th bipolar transistor, the 5th ambipolar crystalline substance
Body pipe, the 6th bipolar transistor, the 7th electric capacity, the 8th electric capacity, the 5th resistance and the 6th resistance；
The base stage of 3rd bipolar transistor connects the 3rd node, and colelctor electrode connects the power supply, emitter stage
Connect the 5th node；
The base stage connection fourth node of 4th bipolar transistor, colelctor electrode connects the power supply, emitter stage connection
6th node；
One end of 7th electric capacity connects the 5th node, and the other end connects the base stage of the 5th bipolar transistor；
The colelctor electrode of 5th bipolar transistor connects the power supply, and emitter stage passes through the 5th resistance eutral grounding；
One end of 8th electric capacity connects the 6th node, and the other end connects the base of the 6th bipolar transistor
Pole；
The colelctor electrode of 6th bipolar transistor connects the power supply, and emitter stage passes through the 6th resistance eutral grounding；
First output end of the transmitting extremely voltage controlled oscillator of the 5th bipolar transistor, the 6th ambipolar crystalline substance
Second output end of the transmitting extremely voltage controlled oscillator of body pipe；Wherein,
3rd node is the first phase contact of the resonance circuit and the buffer circuit；The fourth node is institute
State the second phase contact of resonance circuit and the buffer circuit；
5th node is the first phase contact of buffer circuit and negative resistance circuit；6th node be buffer circuit with
Second phase contact of negative resistance circuit.
Preferably, the resonance circuit includes：Differential inductance, the first backward dioded, the second backward dioded, the 3rd electricity
Appearance, the 4th electric capacity, first resistor, second resistance；
One end connection first node of the differential inductance, other end connection Section Point；The tap of the differential inductance
Connect power supply；
The anode of first backward dioded connects the first node, and negative electrode connects the first control voltage, and described the
The anode connection Section Point of two backward diodeds, negative electrode connects first control voltage；
The two ends of the first resistor connect the first node and ground respectively；The two ends of the second resistance are connected respectively
The Section Point and ground；
The two ends of 3rd electric capacity connect the first node and the 3rd node, the two ends point of the 4th electric capacity respectively
The Section Point and fourth node are not connected；
3rd node is the first phase contact of the resonance circuit and the buffer circuit, output the first resonance letter
Number；The fourth node is the second phase contact of the resonance circuit and the buffer circuit, exports the second resonance signal.
Preferably, the negative resistance circuit includes：First bipolar transistor, the second bipolar transistor, the 5th electric capacity,
Six electric capacity, 3rd resistor, the 4th resistance and the 9th electric capacity；
The colelctor electrode of first bipolar transistor connects the 5th node, and emitter stage connects the current source circuit, base
Pole connects the second control voltage by the 3rd resistor；
The colelctor electrode of second bipolar transistor connects the 6th node, and emitter stage connects the current source, and base stage is led to
Cross the 4th resistance and connect second control voltage；
The two ends of 9th electric capacity connect second control voltage and ground respectively；
One end of 5th electric capacity connects the 5th node, and the other end connects the base of second bipolar transistor
Pole；
One end of 6th electric capacity connects the 6th node, and the other end connects the base of first bipolar transistor
Pole；Wherein,
5th node is the first phase contact of buffer circuit and negative resistance circuit；6th node be buffer circuit with
Second phase contact of negative resistance circuit.
Preferably, first backward dioded and the second backward dioded work in reverse operation area.
Preferably, the first backward dioded and the second reverse two pole described in the capacitance ratio of the 3rd electric capacity and the 4th electric capacity
The capacitance of pipe is at least ten times greater.
Preferably, the first bipolar transistor and the second bipolar transistor work in positive workspace.
Preferably, the 7th metal-oxide-semiconductor works in saturation region.
Preferably, the 3rd bipolar transistor, the 4th bipolar transistor, the 5th bipolar transistor and the 6th are ambipolar
Transistor works in positive workspace.
Preferably, first bipolar transistor and the second bipolar transistor are hetero-junction bipolar transistor.
The embodiment of the present invention also provides a kind of jamproof high frequency voltage controlled oscillator, including：Resonance circuit, negative resistance circuit,
Current source circuit and buffer circuit；
The resonance circuit, the oscillator signal for producing voltage controlled oscillator, the resonance circuit is that inductance and capacitance type is humorous
Shake circuit, and electric capacity therein uses backward dioded；
The negative resistance circuit, for producing negative resistance, to offset the positive resistance that the resonance circuit is produced；
The current source circuit, the electric current for producing voltage controlled oscillator work；The current source circuit includes the electricity
Current source circuit includes the 7th metal-oxide-semiconductor；The source ground of 7th metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor connects the negative resistance
Circuit；The grid of the metal-oxide-semiconductor connects the 3rd control voltage；
The buffer circuit, the oscillator signal for the resonance circuit to be produced enter after row buffering export, with the external world
Signal is isolated；The buffer circuit includes：3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th electricity
Appearance, the 8th electric capacity, the 5th resistance and the 6th resistance；
The grid of 3rd metal-oxide-semiconductor connects the 3rd node, and the drain electrode connection power supply, source electrode connects the 5th node；
The grid connection fourth node of 4th metal-oxide-semiconductor, the drain electrode connection power supply, source electrode connects the 6th node；
One end of 7th electric capacity connects the 5th node, and the other end connects the base of the 5th bipolar transistor
Pole；
The drain electrode of 5th metal-oxide-semiconductor connects the power supply, and source electrode passes through the 5th resistance eutral grounding；
One end of 8th electric capacity connects the 6th node, and the other end connects the base stage of the 6th metal-oxide-semiconductor；
The drain electrode of 6th metal-oxide-semiconductor connects the power supply, and source electrode passes through the 6th resistance eutral grounding；
The source electrode of 5th metal-oxide-semiconductor is the first output end of voltage controlled oscillator, and the source electrode of the 6th metal-oxide-semiconductor is voltage-controlled
Second output end of oscillator；
3rd node is the first phase contact of the resonance circuit and the buffer circuit；The fourth node is institute
State the second phase contact of resonance circuit and the buffer circuit；
5th node is the first phase contact of buffer circuit and negative resistance circuit；6th node be buffer circuit with
Second phase contact of negative resistance circuit.Compared with prior art, the present invention has advantages below：
In the jamproof high frequency voltage controlled oscillator that the present invention is provided, current source circuit is used to produce voltage controlled oscillator work
Electric current；Resonance circuit is used to produce oscillator signal；When resonance circuit uses inductance capacitance, electric capacity therein uses reverse two pole
Pipe；Negative resistance circuit produces negative resistance to offset the positive resistance of resonance circuit generation；Buffer circuit is used for the vibration for producing resonance circuit
Signal, which enters after row buffering, to be exported, to be isolated with outer signals.Resonance electricity in the high frequency voltage controlled oscillator that the present invention is provided
The oscillator signal that road is produced just is exported after buffer circuit enters row buffering, can so avoid outer signals from producing oscillating circuit
Raw interference.Meanwhile, make voltage controlled oscillator that there is preferable phase noise performance using backward dioded in resonance circuit.
Brief description of the drawings
Fig. 1 is the schematic diagram of voltage controlled oscillator of the prior art；
Fig. 2 is the schematic diagram of embodiment one for the jamproof high frequency voltage controlled oscillator that the present invention is provided；
Fig. 3 is the circuit diagram of embodiment two for the jamproof high frequency voltage controlled oscillator that the present invention is provided；
Fig. 4 is the embodiment three-circuit figure for the jamproof high frequency voltage controlled oscillator that the present invention is provided.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Referring to the schematic diagram of embodiment one of Fig. 2, the present invention high frequency voltage controlled oscillator with big tuning range provided.
The high frequency voltage controlled oscillator with big tuning range that the present invention is provided, including：Resonance circuit 100, negative resistance circuit
200th, current source circuit 300 and buffer circuit 400；
The resonance circuit 100, the oscillator signal for producing voltage controlled oscillator, the resonance circuit 100 is inductance electricity
Appearance formula resonance circuit, electric capacity therein uses backward dioded；
The negative resistance circuit 200, for producing negative resistance, to offset the positive resistance that the resonance circuit 100 is produced；
The current source circuit 300, the electric current for producing voltage controlled oscillator work；The current source circuit 300 includes
7th metal-oxide-semiconductor；The source ground of 7th metal-oxide-semiconductor, the drain electrode connection negative resistance circuit of the 7th metal-oxide-semiconductor；7th metal-oxide-semiconductor
Grid connects the 3rd control voltage；
The buffer circuit 400, the oscillator signal for the resonance circuit 100 to be produced, which enters after row buffering, to be exported, with
Isolated with outer signals.
In the high frequency voltage controlled oscillator with big tuning range that the present invention is provided, current source circuit 300 is used to produce pressure
The electric current of controlled oscillator work；Resonance circuit 100 is used to produce oscillator signal；Negative resistance circuit 200 produces negative resistance to offset resonance
The positive resistance that circuit 100 is produced；Buffer circuit 400 is used for the oscillator signal that produces resonance circuit and enters after row buffering to export, with
Outer signals are isolated.The oscillator signal that resonance circuit 100 in the high frequency voltage controlled oscillator that the present invention is provided is produced passes through
Buffer circuit 400, which enters after row buffering, just to be exported, and can so avoid outer signals from producing interference to oscillating circuit.Meanwhile, resonance
Make voltage controlled oscillator that there is preferable phase noise performance using backward dioded in circuit.
It should be noted that the specific implementation of two kinds of buffer circuits is provided in the embodiment of the present invention, with reference to
Accompanying drawing describes its operation principle in detail respectively.
Referring to Fig. 3, the circuit diagram of embodiment two for the jamproof high frequency voltage controlled oscillator that the figure provides for the present invention.
Voltage controlled oscillator provided in an embodiment of the present invention, including：Resonance circuit, negative resistance circuit, current source circuit and buffering
Circuit；
The resonance circuit is used to produce oscillator signal with negative resistance circuit；
By the size for adjusting the 3rd control voltage VBIAS, it is ensured that the 7th metal-oxide-semiconductor Q7 works in forward region.
The resonance circuit includes：Differential inductance L0, the first backward dioded C1, the second backward dioded C2, the 3rd electricity
Hold C3, the 4th electric capacity C4, first resistor R1, second resistance R2；
One end of the differential inductance L0 connects the 3rd node C, other end connection fourth node D；The differential inductance L0
Tap connection power supply；
The negative electrode of the first backward dioded C1 connects the first control voltage ATUNE, C1 anode connection first node
A；The negative electrode of the second backward dioded C2 connects the anode connection Section Point B of the first control voltage ATUNE, C2；
The first backward dioded C1 and the second backward dioded C2 work in reverse operation area.
Reverse two poles of first backward dioded C1 and second described in the capacitance ratio of the 3rd electric capacity C3 and the 4th electric capacity C4
Pipe C2 capacitance is at least ten times greater.It can so ensure that the voltage controlled oscillator has wider frequency tuning range.
The working frequency of the voltage controlled oscillator can be adjusted by adjusting the first control voltage ATUNE size.
The two ends of the first resistor R1 connect the first node A and ground respectively；The two ends of the second resistance R2 point
The Section Point B and ground are not connected；
The two ends of the 3rd electric capacity C3 connect the first node A and the 3rd node C respectively, the 4th electric capacity C4's
Two ends connect the Section Point B and fourth node D respectively；
The 3rd node C is the first phase contact of the resonance circuit and the buffer circuit, output the first resonance letter
Number；The fourth node D is the second phase contact of the resonance circuit and the buffer circuit, exports the second resonance signal.
The buffer circuit includes：3rd bipolar transistor Q3, the 4th bipolar transistor Q4, the 5th bipolar transistor
Pipe Q5, the 6th bipolar transistor Q6, the 7th electric capacity C7, the 8th electric capacity C8, the 5th resistance R5 and the 6th resistance R6；
The base stage of the 3rd bipolar transistor Q3 connects the 3rd node C, and colelctor electrode connects the power supply, transmitting
Pole connects the 5th node M；
The base stage of the 4th bipolar transistor Q4 connects the fourth node D, and colelctor electrode connects the power supply, transmitting
Pole connects the 6th node N；
One end of the 7th electric capacity C7 connects the 5th node M, and the other end connects the 5th bipolar transistor
Q5 base stage；
The colelctor electrode of the 5th bipolar transistor Q5 connects the power supply, and emitter stage is connect by the 5th resistance R5
Ground；
One end of the 8th electric capacity C8 connects the 6th node N, and the other end connects the 6th bipolar transistor
Q6 base stage；
The colelctor electrode of the 6th bipolar transistor Q6 connects the power supply, and emitter stage is connect by the 6th resistance R6
Ground；
First output end NOUT of the transmitting extremely voltage controlled oscillator of the 5th bipolar transistor Q5, described 6th couple
Second output end POUT of bipolar transistor Q6 transmitting extremely voltage controlled oscillator；
The 3rd node C is the first phase contact of the resonance circuit and the buffer circuit；The fourth node D is
Second phase contact of the resonance circuit and the buffer circuit；
5th node M is the first phase contact of buffer circuit and negative resistance circuit；The 6th node N is buffer circuit
With the second phase contact of negative resistance circuit.
The effect of the C7 and C8 are isolated DC signals, pass through AC signal.
Buffer circuit, which enters the oscillator signal that resonance circuit is exported after row buffering, to be exported, and makes the working frequency of voltage controlled oscillator
Do not influenceed by outer signals.
Wherein, Q5 and R5 compositions follower, Q6 and R6 composition followers.
3rd bipolar transistor Q3, the 4th bipolar transistor Q4, the 5th bipolar transistor Q5 and the 6th are ambipolar
Transistor Q6 works in positive workspace.
In the high frequency voltage controlled oscillator that the present invention is provided, the negative resistance circuit includes：First bipolar transistor Q1, second
Bipolar transistor Q2,3rd resistor R3, the 4th resistance R4, the 9th electric capacity C9, the 5th electric capacity C5 and the 6th electric capacity C6；
The colelctor electrode of the first bipolar transistor Q1 connects the 5th node M, and emitter stage connects the current source
Circuit, base stage passes through the second control voltage of 3rd resistor R3 connections CDC；
The colelctor electrode of the second bipolar transistor Q2 connects the 6th node N, and emitter stage connects the current source,
Base stage passes through the 4th resistance R4 connections the second control voltage CDC；
The two ends of the 9th electric capacity C9 connect the second control voltage CDC and ground respectively.
One end of the 5th electric capacity C5 connects the 5th node M, and the other end connects second bipolar transistor
Q2 base stage；
One end of the 6th electric capacity C6 connects the 6th node N, and the other end connects first bipolar transistor
Q1 base stage.
The first end of the transmitting extremely negative resistance circuit of the first bipolar transistor Q1, second bipolar transistor
Second end of Q2 transmitting extremely negative resistance circuit.
By the size for adjusting the second control voltage CDC, it is ensured that Q1 and Q2 is in positive workspace.
It should be noted that in the jamproof high frequency voltage controlled oscillator that the present invention is provided, it is preferable that described first is bipolar
Transistor npn npn Q1 and the second bipolar transistor Q2 can be HBT.
The capacitance of the 5th electric capacity C5 and the 6th electric capacity C6 is the first MOS capacitive reactance pipe C1 and the 2nd MOS capacitive reactance pipes C2
/ 10th of capacitance.It can so ensure that voltage controlled oscillator has wider frequency tuning range.
The frequency of oscillation of voltage controlled oscillator can be expressed as：
Wherein, L is differential inductance L0 inductance value；CpFor resonance circuit equivalent parallel electric capacity.Shown in Fig. 1 of prior art
The equivalent parallel electric capacity of voltage controlled oscillator not only includes electric capacity（C1、C2、C3、C4）, and include be connected with resonance circuit
Five electric capacity C5, the 6th electric capacity C6, and the first transistor Q1 and second transistor Q2 base capacity.In summary, shown in Fig. 1
Voltage controlled oscillator there is larger resonance circuit equivalent parallel electric capacity, because frequency of oscillation is inversely proportional with equivalent parallel electric capacity.
Therefore, the voltage controlled oscillator has relatively low frequency of oscillation.
In the jamproof high frequency voltage controlled oscillator that the present invention is provided, due to directly connecting with differential inductance L0 in resonance circuit
The electric capacity for connecing and being indirectly connected with includes the 3rd electric capacity C3, the 4th electric capacity C4, the first backward dioded C1 electric capacity, second reverse two
The equivalent capacity of pole pipe C2 electric capacity and the 3rd bipolar transistor Q3 and the 4th bipolar transistor Q4 base stage；So
Relative to voltage controlled oscillator of the prior art, the equivalent parallel electric capacity of resonance circuit is reduced, by formula（1）Understand oscillation frequency
Rate is inversely proportional with equivalent parallel electric capacity.Therefore, the voltage controlled oscillator has higher frequency of oscillation.
It should be noted that the starting condition for oscillation of voltage controlled oscillator is represented by：
gmRp≥2 （2）
Wherein, gmFor the equivalent transconductance of the negative resistance circuit in parallel with resonance circuit；RpFor resonance circuit equivalent electric in parallel
Resistance.Because HBT is under identical consumption conditions, with bigger mutual conductance, therefore negative resistance circuit in the voltage controlled oscillator uses HBT
（Q1、Q2）Voltage controlled oscillator rapidly starting of oscillation can be made.
The drain electrode that the current source circuit includes the 7th metal-oxide-semiconductor Q7 connects the negative resistance circuit, is specially：
Drain electrode connection the second bipolar transistor Q2 of 7th metal-oxide-semiconductor Q7 emitter stage and the first ambipolar crystalline substance
Body pipe Q1 emitter stage.
The grid of the 7th metal-oxide-semiconductor Q7 connects the 3rd control voltage VBIAS.
By the size for adjusting the 3rd control voltage VBIAS, it is ensured that the 7th metal-oxide-semiconductor Q7 works in saturation region.
It should be noted that using backward dioded in resonance circuit（C1、C2）.Because control backward dioded is worked in
Reverse operation area, the electric capacity of backward dioded is relative to MOS capacitive reactance pipes, and its value size is smaller with control voltage ATUNE change,
Therefore with preferable phase noise.
In summary, the voltage controlled oscillator improves frequency of oscillation relative to the voltage controlled oscillator of prior art, and can
With rapidly starting of oscillation, with relatively low phase noise.
Q3, Q4 and Q5 in the buffer circuit in embodiment, Q6 shown in Fig. 3 are realized by transistor, it is possible to understand that
, the transistor sites in buffer circuit can also realize by metal-oxide-semiconductor, as shown in figure 4, the figure is the present invention provide it is anti-
Another embodiment of the high frequency voltage controlled oscillator of interference.Fig. 4 and Fig. 3 difference is to distinguish Q3, Q4, Q5 and Q6 in Fig. 3
It is changed to M3, M4, M5 and M6.
The buffer circuit includes：3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th
Electric capacity C7, the 8th electric capacity C8, the 5th resistance R5 and the 6th resistance R6；
The grid of the 3rd metal-oxide-semiconductor M3 connects the 3rd node C, the drain electrode connection power supply, source electrode connection the 5th
Node M；
The grid of the 4th metal-oxide-semiconductor M4 connects the fourth node D, and the drain electrode connection power supply, source electrode connection is described
6th node N；
One end of the 7th electric capacity C7 connects the 5th node M, and the other end connects the grid of the 5th metal-oxide-semiconductor M5
Pole；
The drain electrode of the 5th metal-oxide-semiconductor M5 connects the power supply, and source electrode is grounded by the 5th resistance R5；
One end of the 8th electric capacity C8 connects the 6th node N, and the other end connects the grid of the 6th metal-oxide-semiconductor M6
Pole；
The drain electrode of the 6th metal-oxide-semiconductor M6 connects the power supply, and source electrode is grounded by the 6th resistance R6；
The source electrode of the 5th metal-oxide-semiconductor M5 is the first output end NOUT of voltage controlled oscillator, the source of the 6th metal-oxide-semiconductor M6
Extremely the second output end POUT of voltage controlled oscillator；
The 3rd node C is the first phase contact of the resonance circuit and the buffer circuit；The fourth node D is
Second phase contact of the resonance circuit and the buffer circuit；
5th node M is the first phase contact of buffer circuit and negative resistance circuit；The 6th node N is buffer circuit
With the second phase contact of negative resistance circuit.
Fig. 4 operation principle is identical with Fig. 3, will not be repeated here.
The above described is only a preferred embodiment of the present invention, not making any formal limitation to the present invention.Though
So the present invention is disclosed above with preferred embodiment, but is not limited to the present invention.It is any to be familiar with those skilled in the art
Member, without departing from the scope of the technical proposal of the invention, all using the methods and techniques content of the disclosure above to the present invention
Technical scheme makes many possible variations and modification, or is revised as the equivalent embodiment of equivalent variations.Therefore, it is every without departing from
The content of technical solution of the present invention, the technical spirit according to the present invention is to any simple modification made for any of the above embodiments, equivalent
Change and modify, still fall within technical solution of the present invention protection in the range of.
Claims (10)
1. a kind of jamproof high frequency voltage controlled oscillator, it is characterised in that including：Resonance circuit, negative resistance circuit, current source circuit
And buffer circuit；
The resonance circuit, the oscillator signal for producing voltage controlled oscillator, the resonance circuit is inductance and capacitance type resonance electricity
Road, electric capacity therein uses backward dioded；
The negative resistance circuit, for producing negative resistance, to offset the positive resistance that the resonance circuit is produced；
The current source circuit, the electric current for producing voltage controlled oscillator work；The current source circuit includes the 7th metal-oxide-semiconductor；
The source ground of 7th metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor connects the negative resistance circuit；The grid of 7th metal-oxide-semiconductor
Pole connects the 3rd control voltage；
The buffer circuit, the oscillator signal for the resonance circuit to be produced enter after row buffering export, with outer signals
Isolated；The buffer circuit includes：3rd bipolar transistor, the 4th bipolar transistor, the 5th bipolar transistor,
6th bipolar transistor, the 7th electric capacity, the 8th electric capacity, the 5th resistance and the 6th resistance；
The base stage of 3rd bipolar transistor connects the 3rd node, and colelctor electrode connection power supply, emitter stage connects the 5th node；
The base stage connection fourth node of 4th bipolar transistor, colelctor electrode connects the power supply, emitter stage connection the 6th
Node；
One end of 7th electric capacity connects the 5th node, and the other end connects the base stage of the 5th bipolar transistor；
The colelctor electrode of 5th bipolar transistor connects the power supply, and emitter stage passes through the 5th resistance eutral grounding；
One end of 8th electric capacity connects the 6th node, and the other end connects the base stage of the 6th bipolar transistor；
The colelctor electrode of 6th bipolar transistor connects the power supply, and emitter stage passes through the 6th resistance eutral grounding；
First output end of the transmitting extremely voltage controlled oscillator of the 5th bipolar transistor, the 6th bipolar transistor
Transmitting extremely voltage controlled oscillator the second output end；Wherein,
3rd node is the first phase contact of the resonance circuit and the buffer circuit；The fourth node is described humorous
Shake the second phase contact of circuit and the buffer circuit；
5th node is the first phase contact of buffer circuit and negative resistance circuit；6th node is buffer circuit and negative resistance
Second phase contact of circuit.
2. jamproof high frequency voltage controlled oscillator according to claim 1, it is characterised in that the resonance circuit includes：
Differential inductance, the first backward dioded, the second backward dioded, the 3rd electric capacity, the 4th electric capacity, first resistor, second resistance；
One end connection first node of the differential inductance, other end connection Section Point；The tap connection of the differential inductance
Power supply；
The anode of first backward dioded connects the first node, and negative electrode connects the first control voltage, and described second is anti-
Section Point is connected to the anode of diode, negative electrode connects first control voltage；
The two ends of the first resistor connect the first node and ground respectively；The two ends of the second resistance connect described respectively
Section Point and ground；
The two ends of 3rd electric capacity connect the first node and the 3rd node respectively, and the two ends of the 4th electric capacity connect respectively
Connect the Section Point and fourth node；
3rd node is the first phase contact of the resonance circuit and the buffer circuit, exports the first resonance signal；Institute
The second phase contact that fourth node is the resonance circuit and the buffer circuit is stated, the second resonance signal is exported.
3. jamproof high frequency voltage controlled oscillator according to claim 1, it is characterised in that the negative resistance circuit includes：
First bipolar transistor, the second bipolar transistor, the 5th electric capacity, the 6th electric capacity, 3rd resistor, the 4th resistance and the 9th electricity
Hold；
The colelctor electrode of first bipolar transistor connects the 5th node, and emitter stage connects the current source circuit, and base stage is led to
Cross the 3rd resistor and connect the second control voltage；
The colelctor electrode of second bipolar transistor connects the 6th node, and emitter stage connects the current source, and base stage passes through institute
State the 4th resistance and connect second control voltage；
The two ends of 9th electric capacity connect second control voltage and ground respectively；
One end of 5th electric capacity connects the 5th node, and the other end connects the base stage of second bipolar transistor；
One end of 6th electric capacity connects the 6th node, and the other end connects the base stage of first bipolar transistor；
Wherein,
5th node is the first phase contact of buffer circuit and negative resistance circuit；6th node is buffer circuit and negative resistance
Second phase contact of circuit.
4. jamproof high frequency voltage controlled oscillator according to claim 2, it is characterised in that first backward dioded
Reverse operation area is worked in the second backward dioded.
5. jamproof high frequency voltage controlled oscillator according to claim 2, it is characterised in that the 3rd electric capacity and the 4th
The capacitance of electric capacity is at least more ten times greater than the capacitance of first backward dioded and the second backward dioded.
6. jamproof high frequency voltage controlled oscillator according to claim 3, it is characterised in that the first bipolar transistor and
Second bipolar transistor works in positive workspace.
7. jamproof high frequency voltage controlled oscillator according to claim 1, it is characterised in that the 7th metal-oxide-semiconductor work
In saturation region.
8. jamproof high frequency voltage controlled oscillator according to claim 1, it is characterised in that the 3rd bipolar transistor,
4th bipolar transistor, the 5th bipolar transistor and the 6th bipolar transistor work in positive workspace.
9. jamproof high frequency voltage controlled oscillator according to claim 3, it is characterised in that first bipolar transistor
Pipe and the second bipolar transistor are hetero-junction bipolar transistor.
10. a kind of jamproof high frequency voltage controlled oscillator, it is characterised in that including：Resonance circuit, negative resistance circuit, current source electricity
Road and buffer circuit；
The resonance circuit, the oscillator signal for producing voltage controlled oscillator, the resonance circuit is inductance and capacitance type resonance electricity
Road, electric capacity therein uses backward dioded；
The negative resistance circuit, for producing negative resistance, to offset the positive resistance that the resonance circuit is produced；
The current source circuit, the electric current for producing voltage controlled oscillator work；The current source circuit includes the 7th metal-oxide-semiconductor；
The source ground of 7th metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor connects the negative resistance circuit；The grid of 7th metal-oxide-semiconductor
Pole connects the 3rd control voltage；
The buffer circuit, the oscillator signal for the resonance circuit to be produced enter after row buffering export, with outer signals
Isolated；The buffer circuit includes：3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th electric capacity,
Eight electric capacity, the 5th resistance and the 6th resistance；
The grid of 3rd metal-oxide-semiconductor connects the 3rd node, and drain electrode connection power supply, source electrode connects the 5th node；
The grid connection fourth node of 4th metal-oxide-semiconductor, the drain electrode connection power supply, source electrode connects the 6th node；
One end of 7th electric capacity connects the 5th node, and the other end connects the base stage of the 5th metal-oxide-semiconductor；
The drain electrode of 5th metal-oxide-semiconductor connects the power supply, and source electrode passes through the 5th resistance eutral grounding；
One end of 8th electric capacity connects the 6th node, and the other end connects the base stage of the 6th metal-oxide-semiconductor；
The drain electrode of 6th metal-oxide-semiconductor connects the power supply, and source electrode passes through the 6th resistance eutral grounding；
The source electrode of 5th metal-oxide-semiconductor is the first output end of voltage controlled oscillator, and the source electrode of the 6th metal-oxide-semiconductor is VCO
Second output end of device；
3rd node is the first phase contact of the resonance circuit and the buffer circuit；The fourth node is described humorous
Shake the second phase contact of circuit and the buffer circuit；
5th node is the first phase contact of buffer circuit and negative resistance circuit；6th node is buffer circuit and negative resistance
Second phase contact of circuit.
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| CN101043199A (en) * | 2006-03-24 | 2007-09-26 | 苏州中科半导体集成技术研发中心有限公司 | Voltage controlled oscillator with automatic amplitude control |
| CN101686053A (en) * | 2009-07-21 | 2010-03-31 | 清华大学 | Frequency self-correction phase-locked loop adopting bonding wire as inductor of oscillator |
| CN101820250A (en) * | 2010-04-15 | 2010-09-01 | 复旦大学 | Wideband orthogonal dual-mode voltage controlled oscillator |
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| KR100513972B1 (en) * | 2003-07-01 | 2005-09-13 | 학교법인 한국정보통신학원 | Wideband variable frequency voltage controlled oscillator |
| US8093958B2 (en) * | 2007-12-05 | 2012-01-10 | Integrated Device Technology, Inc. | Clock, frequency reference, and other reference signal generator with a controlled quality factor |
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| CN101043199A (en) * | 2006-03-24 | 2007-09-26 | 苏州中科半导体集成技术研发中心有限公司 | Voltage controlled oscillator with automatic amplitude control |
| CN101686053A (en) * | 2009-07-21 | 2010-03-31 | 清华大学 | Frequency self-correction phase-locked loop adopting bonding wire as inductor of oscillator |
| CN101820250A (en) * | 2010-04-15 | 2010-09-01 | 复旦大学 | Wideband orthogonal dual-mode voltage controlled oscillator |
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Effective date of registration: 20190114 Address after: 266101 Songling Road 169, Laoshan District, Qingdao City, Shandong Province Patentee after: Zhongke Xinyun Microelectronics Technology Co., Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |