CN103730543A - 发光二极管的制作方法及由该制作方法制作的发光二极管 - Google Patents
发光二极管的制作方法及由该制作方法制作的发光二极管 Download PDFInfo
- Publication number
- CN103730543A CN103730543A CN201210381744.3A CN201210381744A CN103730543A CN 103730543 A CN103730543 A CN 103730543A CN 201210381744 A CN201210381744 A CN 201210381744A CN 103730543 A CN103730543 A CN 103730543A
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- electrode
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- emitting diode
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 34
- 238000000137 annealing Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 44
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- 229910052751 metal Inorganic materials 0.000 claims description 13
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- 239000000758 substrate Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
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- 239000011651 chromium Substances 0.000 claims description 3
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- 239000010936 titanium Substances 0.000 claims description 3
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
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- 229910052804 chromium Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052737 gold Inorganic materials 0.000 claims description 2
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- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
发光二极管磊晶结构 | 10 |
基板 | 11 |
磊晶层 | 12 |
第一半导体层 | 121 |
有源层 | 122 |
第二半导体层 | 123 |
第一区域 | 13 |
第二区域 | 14 |
透明导电层 | 15 |
第一电极 | 21 |
第二电极 | 22 |
钝化层 | 30 |
中间金属层 | 40 |
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210381744.3A CN103730543B (zh) | 2012-10-10 | 2012-10-10 | 发光二极管的制作方法 |
TW101137850A TW201419581A (zh) | 2012-10-10 | 2012-10-12 | 發光二極體的製作方法及由該製作方法製作的發光二極體 |
US13/942,713 US8846428B2 (en) | 2012-10-10 | 2013-07-16 | Method for manufacturing light emitting diode chip with electrodes having smooth surfaces |
JP2013207099A JP2014078711A (ja) | 2012-10-10 | 2013-10-02 | 発光ダイオード及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210381744.3A CN103730543B (zh) | 2012-10-10 | 2012-10-10 | 发光二极管的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103730543A true CN103730543A (zh) | 2014-04-16 |
CN103730543B CN103730543B (zh) | 2016-12-21 |
Family
ID=50432977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210381744.3A Expired - Fee Related CN103730543B (zh) | 2012-10-10 | 2012-10-10 | 发光二极管的制作方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8846428B2 (zh) |
JP (1) | JP2014078711A (zh) |
CN (1) | CN103730543B (zh) |
TW (1) | TW201419581A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104124311A (zh) * | 2014-08-12 | 2014-10-29 | 厦门市三安光电科技有限公司 | 一种制作发光二极管钝化保护层的方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10381508B2 (en) | 2014-11-19 | 2019-08-13 | National Sun Yat-Sen University | Light emitting element with an enhanced electroluminescence effect |
TWI652372B (zh) | 2015-06-30 | 2019-03-01 | 晶元光電股份有限公司 | 半導體發光裝置及其形成方法 |
TWI709661B (zh) * | 2015-06-30 | 2020-11-11 | 晶元光電股份有限公司 | 半導體發光裝置及其形成方法 |
CN106252470B (zh) * | 2016-08-30 | 2018-08-14 | 厦门市三安光电科技有限公司 | 一种氮化镓基发光二极管及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1945860A (zh) * | 2005-10-06 | 2007-04-11 | 大连路美芯片科技有限公司 | 一种发光二极管的电极制备方法 |
CN101051661A (zh) * | 2006-04-05 | 2007-10-10 | 三星电机株式会社 | GaN基半导体发光器件及其制造方法 |
US20090305448A1 (en) * | 2005-12-08 | 2009-12-10 | Rohm Co., Ltd. | Method for Manufacturing a Semiconductor Light Emitting Device |
JP2010109018A (ja) * | 2008-10-28 | 2010-05-13 | Panasonic Electric Works Co Ltd | 半導体発光素子の製造方法 |
CN102263173A (zh) * | 2010-05-28 | 2011-11-30 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61102732A (ja) * | 1984-10-26 | 1986-05-21 | Matsushita Electronics Corp | 半導体素子の製造方法 |
JP3586293B2 (ja) * | 1994-07-11 | 2004-11-10 | ソニー株式会社 | 半導体発光素子 |
JP3292044B2 (ja) * | 1996-05-31 | 2002-06-17 | 豊田合成株式会社 | p伝導形3族窒化物半導体の電極パッド及びそれを有した素子及び素子の製造方法 |
JP3736181B2 (ja) * | 1998-05-13 | 2006-01-18 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
JP3449535B2 (ja) * | 1999-04-22 | 2003-09-22 | ソニー株式会社 | 半導体素子の製造方法 |
JP5057398B2 (ja) * | 2008-08-05 | 2012-10-24 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
-
2012
- 2012-10-10 CN CN201210381744.3A patent/CN103730543B/zh not_active Expired - Fee Related
- 2012-10-12 TW TW101137850A patent/TW201419581A/zh unknown
-
2013
- 2013-07-16 US US13/942,713 patent/US8846428B2/en not_active Expired - Fee Related
- 2013-10-02 JP JP2013207099A patent/JP2014078711A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1945860A (zh) * | 2005-10-06 | 2007-04-11 | 大连路美芯片科技有限公司 | 一种发光二极管的电极制备方法 |
US20090305448A1 (en) * | 2005-12-08 | 2009-12-10 | Rohm Co., Ltd. | Method for Manufacturing a Semiconductor Light Emitting Device |
CN101051661A (zh) * | 2006-04-05 | 2007-10-10 | 三星电机株式会社 | GaN基半导体发光器件及其制造方法 |
JP2010109018A (ja) * | 2008-10-28 | 2010-05-13 | Panasonic Electric Works Co Ltd | 半導体発光素子の製造方法 |
CN102263173A (zh) * | 2010-05-28 | 2011-11-30 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104124311A (zh) * | 2014-08-12 | 2014-10-29 | 厦门市三安光电科技有限公司 | 一种制作发光二极管钝化保护层的方法 |
CN104124311B (zh) * | 2014-08-12 | 2016-08-24 | 厦门市三安光电科技有限公司 | 一种制作发光二极管钝化保护层的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2014078711A (ja) | 2014-05-01 |
TW201419581A (zh) | 2014-05-16 |
US20140099739A1 (en) | 2014-04-10 |
US8846428B2 (en) | 2014-09-30 |
CN103730543B (zh) | 2016-12-21 |
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Effective date of registration: 20160606 Address after: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant after: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Applicant before: ZHANJING Technology (Shenzhen) Co.,Ltd. Applicant before: Advanced Optoelectronic Technology Inc. |
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Inventor after: Yang Jiyuan Inventor before: Lian Yaqi Inventor before: Hong Zijian |
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Effective date of registration: 20161010 Address after: 100083, Beijing, Haidian District Qinghe Anning East Road No. 4, Building 29, room 18, room two Applicant after: Beijing Times Haoding Energy Saving Technology Co.,Ltd. Address before: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant before: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. |
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Address after: Room 201-4, Unit 1, Building 2, No. 10, Courtyard 1, Gaolizhang Road, Haidian District, Beijing Patentee after: CHINA KEHAODING ENERGY SAVING TECHNOLOGY (BEIJING) Co.,Ltd. Address before: Room 29, 2nd Floor, Building 4, 18 Anningzhuang East Road, Qinghe, Haidian District, Beijing 100083 Patentee before: Beijing Times Haoding Energy Saving Technology Co.,Ltd. |
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Granted publication date: 20161221 Termination date: 20211010 |