CN103730492B - MIS-HEMT device with back surface field plate structure and preparation method thereof - Google Patents
MIS-HEMT device with back surface field plate structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 34
- 229910002704 AlGaN Inorganic materials 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 16
- 230000009467 reduction Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 230000001629 suppression Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 57
- 239000000463 material Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
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- 230000033228 biological regulation Effects 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention discloses a kind of MIS HEMT device with back surface field plate structure and preparation method thereof.This device can be made by process for fabricating semiconductor device of commonly seeing, it includes source electrode, drain electrode, heterojunction structure and back surface field plate electrode, this source, drain and electrically connected by the two-dimensional electron gas being formed in heterojunction structure, and source, drain electrode forms Ohmic contact with heterojunction structure, this heterojunction structure includes the first semiconductor layer and the second semiconductor layer set gradually along direction initialization, first semiconductor layer is arranged at source, between drain electrode, and first semiconductor layer surface be additionally provided with grid, the first insulating medium layer it is additionally provided with to form MIS structure between this grid and the first semiconductor layer, back surface field plate electrode is arranged at the side surface away from the first semiconductor layer of the second semiconductor layer.The present invention can be effectively improved the breakdown voltage of device, and farthest suppression " current collapse " effect.
Description
Technical field
The present invention relates to a kind of MIS-HEMT (High Electron Mobility Transistor, high electron mobility
Transistor) device, particularly to a kind of MIS-HEMT device with back surface field plate structure and preparation method thereof.
Background technology
III group-III nitride semiconductor MIS-HEMT device, because of piezoelectric polarization and spontaneous polarization effect, at heterojunction boundary, as
AlGaN/GaN interface, will form high concentration, the two-dimensional electron gas of high mobility.It addition, III group-III nitride semiconductor is substrate material
The HEMT device of material, it is possible to obtain the highest breakdown voltage, and obtain relatively low ratio conducting resistance, due to material forbidden band simultaneously
Width is big, so having the highest high-temperature working performance and good capability of resistance to radiation.Therefore, it is applicable not only to high frequency power
Amplifying device, moreover it is possible to be applicable to field of power electronics, for high-power device for power switching.
Existing III group-III nitride semiconductor HEMT device uses as high-frequency element or high voltage switch device
Time, there is " current collapse " phenomenon.I.e. under device is operated in DC pulse pattern or high frequency mode, drain electrode 5 output electric current
Do not catch up with the change of grid 7 control signal, it may appear that the situation that the 5 instantaneous reductions of electric current that drain, on-delay increase.Have a strong impact on
The practicality of device.This phenomenon is the storage effect of a kind of electric charge after all.Its principle is, cuts when device is operated in
Only during state (OFF state), electronics will be had to be captured by trap states, the release of these trapped electrons is slow, so when the grid voltage of device
When being placed in again higher than threshold voltage, the conducting state electric current of device will significantly reduce, and on-delay is bigger.In order to keep away
Exempt from " current collapse " effect of device, often use surface passivation, surface process or the positive surface construction field plate structure at device,
Stop electronics injection of trap states in quasiconductor.Thus slow down current collapse effect.But, these problems can only resolver
Part is operated in " current collapse " under low voltage condition, because under low voltage condition, electronics is only to the trap of semiconductor surface
State is filled, and under device is operated in high-voltage case, electronics will be more towards the deep energy level to the quasiconductor body being positioned at bottom
Trap states is filled, and the trap states of specific surface is more difficult to discharge electronics, therefore, when device is operated in by these Deep Level Traps states
Under high-voltage case, conventional technological means solves the effect of " current collapse " effect and will have a greatly reduced quality.
Summary of the invention
A kind of MIS-HEMT device with back surface field plate structure of offer is provided, existing to overcome
Deficiency in technology.
For achieving the above object, present invention employs following technical scheme:
A kind of MIS-HEMT device with back surface field plate structure, including source electrode, drain electrode and heterojunction structure, described source electrode
Electrically connected by the two-dimensional electron gas being formed in heterojunction structure with drain electrode, and described source electrode forms Europe with drain electrode with heterojunction structure
Nurse contacts, and described heterojunction structure includes the first semiconductor layer and the second semiconductor layer set gradually along direction initialization, and the first half
Conductor layer is arranged between source electrode and drain electrode, and the first semiconductor layer surface is additionally provided with grid, described grid and the first quasiconductor
The first insulating medium layer it is additionally provided with to form MIS structure between Ceng, and, this MIS-HEMT device also includes back surface field plate electrode,
Described back surface field plate electrode is arranged at the side surface away from the first semiconductor layer of the second semiconductor layer.
As more one of preferred embodiment, the distance between described grid and source electrode is less than described grid and drain electrode
Between distance.
As one of feasible embodiment, a lateral edges of the most described back surface field plate electrode prolongs to source electrode or drain directions
Stretching, the orthographic projection of the most described back surface field plate electrode is the most overlapping with grid both sides of the edge.
Further, described back surface field plate electrode and grid or source electrode are electrically connected to form backgate field plate or back of the body source field plate.
Further, described source electrode and drain electrode are connected with electronegative potential and the high potential of power supply respectively.
As one of feasible embodiment, the both sides of the edge of described back surface field plate electrode are prolonged to source electrode and drain directions respectively
Stretch.
Or, as one of feasible embodiment, described back surface field plate electrode only has a lateral edges to source electrode or drain electrode side
To extension.
Further, when described MIS-HEMT device works, described grid and back surface field plate electrode are controlled letter by one respectively
Number control.
Further, this MIS-HEMT device also include support pedestal, described support pedestal include support substrate, described
Support group plate is provided with time source electrode, secondary drain electrode and secondary grid, described source electrode, secondary drain electrode and secondary grid respectively with described source electrode, leakage
Pole and grid electrical connection.
As more one of preferred embodiment, also can be provided with between described first semiconductor layer and the second semiconductor layer
In order to improve the interposed layer of the mobility of the two-dimensional electron gas of heterojunction boundary.
As one of specific embodiment, described first semiconductor layer includes AlGaN layer, described second semiconductor layer bag
Include GaN layer.
As one of specific embodiment, described interposed layer can include AlN layer.
As one of more optional embodiment, also also can set between described back surface field plate electrode and the second semiconductor layer
Put the second insulating medium layer.
Further, the thickness of described second semiconductor layer is less than corresponding second semiconductor layer in existing MIS-HEMT device
Thickness.Or, from another perspective, the thickness of described second semiconductor layer should be sufficiently small, makes back surface field plate electrode and formation
Enough near of two-dimensional electron gas at heterojunction boundary such that it is able to effectively regulate and control the surface density of two-dimensional electron gas.
Postscript, " existing MIS-HEMT device " described herein, mean have underlying device structures shown in Fig. 2, this
The MIS-HEMT device that can be obtained by any known approach before application for a patent for invention day.
Further, described support substrate is mainly formed by the material having easy heat conduction and being difficult to conductive characteristic.
Further, when described drain electrode connects high potential, and source electrode connects electronegative potential, and grid connects the current potential less than threshold voltage, should
When MIS-HEMT device is in OFF state, back surface field plate electrode connects negative voltage；And when described grid connects the current potential higher than threshold voltage, should
When MIS-HEMT device is in the conduction state, back surface field plate electrode connects high potential.
Another object of the present invention is to provide a kind of side preparing this MIS-HEMT device with back surface field plate structure
Method, it comprises the steps:
(1) formed on the selected substrate the heterojunction structure being mainly made up of the first semiconductor layer and the second semiconductor layer and
Heterojunction structure forms source electrode and the drain electrode of Ohmic contact, and the first insulation being mainly formed from the first semiconductor layer surface is situated between
The MIS structure that matter layer is formed with grid, thus obtain MIS-HEMT basal body structure；
(2) remove described selected substrate, and set at the side surface away from the first semiconductor layer of this second semiconductor layer
Put back surface field plate electrode.
As one of preferred embodiment, step (2) also includes: removing after described selected substrate, to this second half
Conductor layer carries out reduction processing, then arranges back surface field plate electrode on this second semiconductor layer.
As one of preferred embodiment, step (2) also includes: remove described selected substrate, and the second half leads at this
A side surface away from the first semiconductor layer of body layer forms the second insulating medium layer, then sets on this second insulating medium layer
Put back surface field plate electrode.
The insulant that aforementioned first insulating medium layer and the second insulating medium layer all can use this area known is made.
Further, the method also includes: by this MIS-HEMT basal body structure and mainly by propping up that support substrate forms
Support group seat connects, and make to be distributed in the secondary source electrode on described support substrate, secondary drain electrode and secondary grid respectively with described source electrode, drain electrode
Electrically connect with grid, be then removed the operation of described selected substrate.
Further, in order to the method that described support pedestal and MIS-HEMT basal body structure connect is included face-down bonding or
Wafer bonding techniques.
Compared with prior art, the present invention at least has the advantage that by carrying out existing MIS-HEMT device architecture
Improvement, including arranging back surface field plate electrode in the device structure, and with grid with the use of, it is achieved to two-dimensional electron gas in raceway groove
Effective Regulation, and electric field when working device redistributes so that even if MIS-HEMT is operated under very high voltage, its leakage
Pole output electric current can get caught up in the change of grid voltage, and farthest suppression " current collapse effect ", meanwhile, electric field
Redistribute and can play the effect improving breakdown voltage.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of a kind of MIS-HEMT device with back surface field plate structure in the present invention；
Fig. 2 is the structural representation of existing MIS-HEMT device；
Fig. 3 is one of structural representation of MIS-HEMT device in the embodiment of the present invention 1, and wherein back surface field plate is to drain electrode 5 Hes
Source electrode 6 direction is respectively arranged with extension；
Fig. 4 is in the embodiment of the present invention 1 the two of the structural representation of MIS-HEMT device, and wherein back surface field plate is only to source electrode 6
Electrode direction has extension；
Fig. 5 is in the embodiment of the present invention 1 the three of the structural representation of MIS-HEMT device, and wherein back surface field plate is only to drain electrode 5
Electrode direction has extension；
Fig. 6 is the structural representation of MIS-HEMT device in the embodiment of the present invention 2, wherein back surface field plate electrode 10 and grid 7
Electrical connection；
Fig. 7 is the structural representation of the MIS-HEMT device in the embodiment of the present invention 3, wherein back surface field plate electrode 10 and source electrode
6 electrical connections；
Fig. 8 is that in the present invention one typical embodiments, the structure of a kind of MIS-HEMT device with back surface field plate structure is shown
It is intended to；
Fig. 9 is the preparation work of a kind of MIS-HEMT device with back surface field plate structure in the present invention one typical embodiments
Process flow figure.
Detailed description of the invention
Refering to Fig. 2, existing MIS-HEMT device (such as AlGaN/GaN device) produces the reason of current collapse phenomenon and is: when
The drain electrode 5 of device applies high voltage, and when grid 7 applies the voltage less than threshold value, device will be off state, at the work of electric field
Under with, in the body of AlGaN surface 11 and GaN high field area class alms giver's trap states of 12 by trapped electron in electronegative, quiet
Under the effect of electric induction, these negative charges can make again the two-dimensional electron gas equivalent of the AlGaN/GaN interface 13 of correspondence reduce, when
Time the surface density of these trap states is sufficiently high, it might even be possible to by completely depleted for the two-dimensional electron gas in raceway groove.These are captured
Obtain the electronics in trap, need the regular hour just can discharge, musec order to be arrived of the shortest time, even can arrive
Second-time.When device transient state is opened, below grid, the two-dimensional electron gas quantity in raceway groove will under the sensing of grid voltage significantly
Raising, but in the out of contior region of grid 7, the two-dimensional electron gas in raceway groove be still controlled by trap capture negative electricity
Lotus, its total quantity is the least, and the electric conduction resistive making device is big, it is necessary to wait until trap states discharge completely electronics can be only achieved should
Some quantity, this have on-delay and the big phenomenon of electric conduction resistive, it is simply that " current collapse ".
For solving the defect of aforementioned common MIS-HEMT device, the present invention proposes a kind of MIS-with back surface field plate structure
HEMT device, its core texture refers to Fig. 1, and wherein supporting pedestal role is mechanical support and electrode extraction, in explanation
During device principle, this part is omitted.The source electrode 6 of this device, drain electrode 5 are positioned at the first semiconductor layer 3(such as AlGaN) simultaneously,
And point row two ends, grid 7 also is located at the first semiconductor layer 3 one side, and between source electrode 6, drain electrode 5, and, grid 7 distance sources
Pole 6 is close together.Back surface field plate electrode 10 is positioned at the second semiconductor layer 2(such as GaN) simultaneously, and due to the second semiconductor layer 2
Carrying out thinning, back surface field plate electrode 10 is relatively near apart from the two-dimensional electron gas of heterojunction boundary, can effectively regulate and control Two-dimensional electron
The surface density of gas.When the drain electrode 5 of device connects high voltage, and source electrode 6 connects 0 current potential, and grid 7 connects the current potential less than threshold voltage, device
When being in OFF state, back surface field plate electrode 10 can apply negative voltage, thus suppress at the first semiconductor layer 3 surface 11 and the second half lead
Body layer internal 12, for the capture of electronics, stops the minimizing of heterojunction boundary two-dimensional electron gas.When the grid 7 of device applies to be higher than
During the current potential of threshold voltage, when device is in the conduction state, back surface field plate electrode 10 applies high voltage, can be at heterojunction boundary
Additionally generate two-dimensional electron gas 14, make up its loss, thus play suppression conducting resistance and reduce, reduce the work of on-delay
With, thus solve " current collapse " effect.
Referring to shown in Fig. 8 is a kind of AlGaN/GaN MIS-HEMT device in the present invention one typical embodiments again,
It includes source electrode 6, drain electrode 5 and grid 7, back surface field plate electrode 10, support pedestal, insulating medium layer and AlGaN/GaN heterojunction structure
And it being positioned at the two-dimensional electron gas of heterojunction boundary, source, drain electrode 5 realize electrical connection by two-dimensional electron gas.Source, drain electrode 5 are positioned at
AlGaN one side, and form Ohmic contact with AlGaN, grid 7 is positioned at AlGaN one side, and with AlGaN every with an insulating medium layer 4
Forming MIS structure, back surface field plate electrode 10 is positioned at GaN one side, and with GaN every with another insulating medium layer 9.This support pedestal has
Secondary source electrode 6 ', secondary drain electrode 5 ', secondary grid 7 ' and support substrate 8.Back surface field plate electrode 10 has coverage more broader than grid 7.
Aforementioned source electrode 6 ', secondary drain electrode 5 ', secondary grid 7 ' can by face-down bonding or wafer bonding techniques etc. respectively with
Source electrode 6, drain electrode 5, grid 7 combine.
Postscript, it should be noted that the aforementioned insulating medium layer being arranged between back surface field plate electrode and the second semiconductor layer
Also can omit.
Referring to Fig. 9 again, this MIS-HEMT device can be prepared by following technique:
A) on substrate 1 material, tradition AlGaN/GaN MIS-HEMT device architecture is completed, i.e. MIS-HEMT device base
Body；
B) supporting on substrate 8, formed and comprise time source electrode 6 ', secondary drain electrode 5 ', the support pedestal of secondary grid 7 '.This support group
Panel material can be any one material applicatory；
C) MIS-HEMT device body and support pedestal are combined, form a coalition, be characterized in MIS-HEMT device
The substrate of matrix is topmost.Source electrode 6, drain electrode 5, grid 7 are electrically connected with secondary source electrode 6 ', secondary drain electrode 5 ', secondary grid 7 ' respectively；
D) use existing semiconducter process, substrate 1 material of coalition is removed, outside only residue AlGaN/GaN
Prolong structure, and now GaN layer topmost.
E) existing reduction process means are utilized to be thinned to suitable thickness GaN mono-layer.
F) on thinning GaN, back surface field plate electrode 10 is constructed；
G) back surface field plate electrode 10 is interconnected with source electrode 6 or grid 7, or back surface field plate electrode 10 is individually applied the signal of telecommunication
Use.
Certainly, technical scheme also apply be applicable to HEMT(HEMT), its structure includes: source electrode, drain electrode and different
Matter structure (such as AlGaN/GaN) and be positioned at the two-dimensional electron gas of heterojunction boundary, back surface field plate electrode, support pedestal.Described source electrode
It is positioned at AlGaN one side with drain electrode, forms Ohmic contact with AlGaN, be electrically connected by the two-dimensional electron gas being formed in heterojunction structure
Connect.Described grid is positioned at AlGaN one side, forms Schottky contacts with substrate.Described HEMT device has back surface field plate electrode and props up
Support group seat, back surface field plate electrode is positioned at the second semiconductor layer (such as GaN) simultaneously.Described support pedestal comprises time source electrode, secondary drain electrode, secondary
Grid, it is combined with source electrode, drain electrode, grid respectively.
Above technical solution of the present invention is summarized, in order to enable the public to better understand the technology hands of the present invention
Section, and can be practiced according to the content of description, below technical scheme is further described.
Embodiment 1 has AlGaN/GaN refering to Fig. 3, this MIS-HEMT.GaN specially adulterates.Can in AlGaN
To mix p-type impurity, it is also possible to be not doped.The thickness of AlGaN is about 15 to 30nm.
This MIS-HEMT has drain electrode 5 and source electrode 6.Drain electrode 5 forms Ohmic contact, and and ditch with source electrode 6 with AlGaN/GaN
In road, two-dimensional electron gas forms good electrical connection.Drain electrode 5 and source electrode 6 are (such as Ti/Al/Ti/Au or Ti/Al/ by multiple layer metal
Ni/Au etc.) form Ohmic contact by quick high-temp annealing.
Further, this MIS-HEMT has grid 7, between source electrode 6 and drain electrode 5, and close together near source electrode 6,
Grid 7 is positioned on a dielectric layer 4, and this dielectric layer 4 is positioned at again on AlGaN.This dielectric layer 4 can be by Al2O3Deng composition, and
Can be deposited on AlGaN with process meanses such as PECVD, ALD.
Back surface field plate electrode 10 is positioned on GaN, has overlapping with grid 7 in vertical direction, and to source, drain 5 directions
Be respectively arranged with extension (or, only to drain electrode 5 or source electrode 6 direction extend, show back surface field plate electrode 10 only to 5 directions that drain refering to Fig. 4
Extend).
Support pedestal support substrate 8 can use AlN substrate, thickness is 100 ~ 1000um, secondary source electrode 6 ', secondary drain electrode 5 ',
Secondary grid 7 ' can use Ti(50 ~ 100)/Au(50 ~ 1000nm) metal level.
The operation principle of this MIS-HEMT with back surface field plate is as follows: when adding the current potential higher than threshold voltage on grid 7,
In raceway groove, two-dimensional electron gas is higher, and device is in opening；When adding the current potential less than threshold voltage on grid 7, ditch
In road, two-dimensional electron gas is depleted, and device is closed；Can be by the current potential on grid 7 be controlled, control gate
Two-dimensional electron gas in raceway groove corresponding to pole 7 times, thus control the on off state of device channel.
Back surface field plate electrode 10 can apply the independent signal of telecommunication control (can also apply identical with grid 7 or source electrode 6
Current potential, the back surface field plate electrode 10 that is as shown in Figure 6 electrically connects with grid 7, it is achieved example equipotential with grid 7), and lead to
Cross and back surface field plate electrode 10 is added the different signals of telecommunication can realize the control of two-dimensional electron gas 14 concentration in its corresponding raceway groove.
Embodiment 2 has AlGaN/GaN refering to Fig. 6, this MIS-HEMT.GaN specially adulterates.Can in AlGaN
To mix p-type impurity, it is also possible to be not doped.The thickness of AlGaN is about 15 to 30nm.
This MIS-HEMT has drain electrode 5 and source electrode 6.Drain electrode 5 forms Ohmic contact, and and ditch with source electrode 6 with AlGaN/GaN
In road, two-dimensional electron gas forms good electrical connection.Drain electrode 5 and source electrode 6 are (such as Ti/Al/Ti/Au or Ti/Al/ by multiple layer metal
Ni/Au etc.) form Ohmic contact by quick high-temp annealing.
Further, this MIS-HEMT has grid 7, between source electrode 6 and drain electrode 5, and close together near source electrode 6,
Grid 7 is positioned on a dielectric layer 4, and this dielectric layer 4 is positioned at again on AlGaN.This dielectric layer 4 can be by Al2O3Deng composition, and
Can be deposited on AlGaN with process meanses such as PECVD, ALD.
Back surface field plate electrode 10 is positioned on GaN, has overlapping with grid 7 in vertical direction, and to source, drain 5 directions
Be respectively arranged with extension (or, only to drain electrode 5 or source electrode 6 direction extend, show back surface field plate electrode 10 only to 5 directions that drain refering to Fig. 4
Extend).
Support pedestal support substrate 8 can use AlN substrate, thickness is 100 ~ 1000um, secondary source electrode 6 ', secondary drain electrode 5 ',
Secondary grid 7 ' can use Ti(50 ~ 100)/Au(50 ~ 1000nm) metal level.
The operation principle of this MIS-HEMT with back surface field plate is as follows: when adding the current potential higher than threshold voltage on grid 7,
In raceway groove, two-dimensional electron gas is higher, and device is in opening；When adding the current potential less than threshold voltage on grid 7, ditch
In road, two-dimensional electron gas is depleted, and device is closed；Can be by the current potential on grid 7 be controlled, control gate
Two-dimensional electron gas in raceway groove corresponding to pole 7 times, thus control the on off state of device channel.
Back surface field plate electrode 10 applies and the equipotential control signal of grid 7, it is achieved to two-dimensional electron gas in its corresponding raceway groove
The control of 14 concentration.
Embodiment 3 has AlGaN/GaN refering to Fig. 7, this MIS-HEMT.GaN specially adulterates.Can in AlGaN
To mix p-type impurity, it is also possible to be not doped.The thickness of AlGaN is about 15 to 30nm.
This MIS-HEMT has drain electrode 5 and source electrode 6.Drain electrode 5 forms Ohmic contact, and and ditch with source electrode 6 with AlGaN/GaN
In road, two-dimensional electron gas forms good electrical connection.Drain electrode 5 and source electrode 6 are (such as Ti/Al/Ti/Au or Ti/Al/ by multiple layer metal
Ni/Au etc.) form Ohmic contact by quick high-temp annealing.
Further, this MIS-HEMT has grid 7, between source electrode 6 and drain electrode 5, and close together near source electrode 6,
Grid 7 is positioned on a dielectric layer 4, and this dielectric layer 4 is positioned at again on AlGaN.This dielectric layer 4 can be by Al2O3Deng composition, and
Can be deposited on AlGaN with process meanses such as PECVD, ALD.
Back surface field plate electrode 10 is positioned on GaN, has overlapping with grid 7 in vertical direction, and to source, drain 5 directions
Be respectively arranged with extension (or, only to drain electrode 5 or source electrode 6 direction extend, show back surface field plate electrode 10 only to source electrode 6 direction refering to Fig. 4
Extend).
Support pedestal support substrate 8 can use AlN substrate, thickness is 100 ~ 1000um, secondary source electrode 6 ', secondary drain electrode 5 ',
Secondary grid 7 ' can use Ti(50 ~ 100)/Au(50 ~ 1000nm) metal level.
The operation principle of this MIS-HEMT with back surface field plate is as follows: when adding the current potential higher than threshold voltage on grid 7,
In raceway groove, two-dimensional electron gas is higher, and device is in opening；When adding the current potential less than threshold voltage on grid 7, ditch
In road, two-dimensional electron gas is depleted, and device is closed；Can be by the current potential on grid 7 be controlled, control gate
Two-dimensional electron gas in raceway groove corresponding to pole 7 times, thus control the on off state of device channel.
Back surface field plate electrode 10 applies and the equipotential control signal of source electrode 6, it is achieved to two-dimensional electron gas in its corresponding raceway groove
The control of 14 concentration.
Finally it should be noted that embodiments above, only in order to technical scheme to be described, is not intended to limit, this
The those of ordinary skill in field it is understood that the technical scheme described in aforementioned schemes still can be modified by it, or
Wherein portion of techniques feature is carried out equivalent；And these amendments or replacement, do not make the essence of appropriate technical solution take off
Spirit and scope from apparatus of the present invention scheme.
Claims (11)
1. there is a MIS-HEMT device for back surface field plate structure, including source electrode (6), drain electrode (5) and heterojunction structure, described
Source electrode (6) with drain electrode (5) electrically connect by the two-dimensional electron gas being formed in heterojunction structure, and described source electrode (6) and drain (5)
Form Ohmic contact with heterojunction structure, described heterojunction structure include the first semiconductor layer (3) of setting gradually along direction initialization and
Second semiconductor layer (2), the first semiconductor layer (3) is arranged between source electrode (6) and drain electrode (5), and the first semiconductor layer (3) table
Face is additionally provided with grid (7), is additionally provided with the first insulating medium layer (4) to be formed between described grid (7) and the first semiconductor layer (3)
MIS structure, it is characterised in that it also includes that back surface field plate electrode (10), described back surface field plate electrode (10) are arranged at the second quasiconductor
A side surface away from the first semiconductor layer (3) of layer (2), and described back surface field plate electrode (10) and described second semiconductor layer
(2) insulating medium layer is also distributed between, and wherein said second semiconductor layer (2) is crossed through reduction processing.
The most according to claim 1, there is the MIS-HEMT device of back surface field plate structure, it is characterised in that the most described back surface field
One lateral edges of plate electrode (10) extends to source electrode (6) or drain electrode (5) direction, the orthographic projection of the most described back surface field plate electrode (10)
The most overlapping with grid (7) both sides of the edge.
The most according to claim 1, there is the MIS-HEMT device of back surface field plate structure, it is characterised in that described back surface field plate electricity
Pole (10) and grid (7) or source electrode (6) are electrically connected to form backgate field plate or back of the body source field plate.
The most according to claim 1, there is the MIS-HEMT device of back surface field plate structure, it is characterised in that described source electrode (6)
It is connected with electronegative potential and the high potential of power supply respectively with drain electrode (5).
The MIS-HEMT device with back surface field plate structure the most according to claim 1 or claim 2, it is characterised in that described back surface field
The both sides of the edge of plate electrode (10) extend to source electrode (6) and drain electrode (5) direction respectively, or described back surface field plate electrode (10) only has
One lateral edges extends to source electrode (6) or drain electrode (5) direction.
The most according to claim 1, there is the MIS-HEMT device of back surface field plate structure, it is characterised in that at described MIS-
During HEMT device work, described grid (7) and back surface field plate electrode (10) are controlled by a control signal respectively.
The most according to claim 1, there is the MIS-HEMT device of back surface field plate structure, it is characterised in that it also includes supporting
Pedestal, described support pedestal includes supporting substrate (8), described support substrate (8) be provided with time source electrode (6 '), secondary drain electrode (5 ') and
Secondary grid (7 '), described source electrode (6 '), secondary drain electrode (5 ') and time grid (7 ') respectively with described source electrode (6), drain electrode (5) and grid
Pole (7) electrically connects.
The most according to claim 1, there is the MIS-HEMT device of back surface field plate structure, it is characterised in that described the first half lead
Body layer (3) layer includes that AlGaN layer, described second semiconductor layer (2) include GaN layer.
9. there is according to claim 1 or 8 the MIS-HEMT device of back surface field plate structure, it is characterised in that described second
The thickness of semiconductor layer (2) is less than the thickness of corresponding second semiconductor layer in existing MIS-HEMT device.
10. the preparation method of a MIS-HEMT device with back surface field plate structure, it is characterised in that comprise the steps:
(1) selected substrate (1) upper formed the heterojunction structure being mainly made up of the first semiconductor layer (3) and the second semiconductor layer (2) and
Heterojunction structure forms source electrode (6) and the drain electrode (5) of Ohmic contact, and is mainly formed from the first semiconductor layer (3) surface
The MIS structure that first insulating medium layer (4) and grid (7) are formed, thus obtain MIS-HEMT basal body structure；(2) described in removing
Selected substrate (1), and this second semiconductor layer (2) is carried out reduction processing, afterwards at this second semiconductor layer (2) away from the
The side surface configuration insulating medium layer of semi-conductor layer (3), arranges thereafter back surface field plate electrode (10) on this insulating medium layer.
The preparation method of the 11. MIS-HEMT devices according to claim 10 with back surface field plate structure, it is characterised in that
It also includes: is connected with the support pedestal being mainly made up of support substrate (8) by this MIS-HEMT basal body structure, and makes to be distributed in
Secondary source electrode (6 ') on described support substrate (8), secondary drain electrode (5 ') and time grid (7 ') respectively with described source electrode (6), drain electrode (5)
Electrically connect with grid (7), be then removed the operation of described selected substrate (1).
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