CN103715257B - HEMT device with back surface field plate structure and manufacturing method of HEMT device - Google Patents

HEMT device with back surface field plate structure and manufacturing method of HEMT device Download PDF

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Publication number
CN103715257B
CN103715257B CN201410008455.8A CN201410008455A CN103715257B CN 103715257 B CN103715257 B CN 103715257B CN 201410008455 A CN201410008455 A CN 201410008455A CN 103715257 B CN103715257 B CN 103715257B
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plate
semiconductor layer
electrode
hemt
grid
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CN201410008455.8A
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Chinese (zh)
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CN103715257A (en
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董志华
蔡勇
于国浩
张宝顺
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杭州电子科技大学
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66446Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

Abstract

The invention discloses an HEMT device with a back surface field plate structure and a manufacturing method of the HEMT device. The device can be manufactured through a common semiconductor device machining technology. The device comprises a source electrode, a drain electrode, a heterostructure and a back field plate electrode. The source electrode and the drain electrode electrically connected through two-dimensional electron gas formed in the heterostructure, the source electrode, the drain electrode and the heterostructure form ohmic contact, the heterostructure comprises a first semiconductor layer and a second semiconductor layer which are arranged in sequence in the setting direction, the first semiconductor layer is arranged between the source electrode and the drain electrode, a grid electrode is arranged on the surface of the first semiconductor layer, Schottky contact is formed between the grid electrode and the first semiconductor layer, and the back field plate electrode is arranged on the surface of one side, far away from the first semiconductor layer, of the second semiconductor. The puncture voltage of the device can be effectively improved, and the effect of electric current collapsing can be restrained to the maximum degree.

Description

There is hemt device of back side field plate structure and preparation method thereof

Technical field

The present invention relates to a kind of hemt (high electron mobility transistor, high electron mobility crystal Pipe) device, particularly to a kind of hemt device with back of the body field plate structure and preparation method thereof.

Background technology

Group-III nitride semiconductor hemt device, because of piezoelectric polarization and spontaneous polarization effect, in heterojunction boundary, such as Algan/gan interface, will form the two-dimensional electron gas of high concentration, high mobility.In addition, group-III nitride semiconductor is substrate material The hemt device of material, it is possible to obtain very high breakdown voltage, and obtain relatively low ratio conducting resistance, due to material forbidden band simultaneously Width is big, so having very high high-temperature working performance and good capability of resistance to radiation.Therefore, it is applicable not only to high frequency power Amplifying device moreover it is possible to be applied to field of power electronics, for high-power device for power switching.

Existing group-III nitride semiconductor hemt device uses as high-frequency element or high voltage switch device When, there is " current collapse " phenomenon.I.e. when device is operated under DC pulse pattern or high frequency mode, drain 4 output currents Do not catch up with grid 6 control signal changes the situation it may appear that drain electrode 4 electric currents instantaneously reduce, on-delay increases.Have a strong impact on The practicality of device.This phenomenon is a kind of storage effect of electric charge after all.Its principle is, cuts when device is operated in Only during state (OFF state), electronics will be had to be captured by trap states, the release of these trapped electrons is slow, so the grid voltage when device When being placed in again higher than threshold voltage, the conducting state electric current of device will significantly reduce, and on-delay is larger.In order to keep away Exempt from " current collapse " effect of device, often adopt surface passivation, surface treatment or the positive surface construction field plate structure in device, To stop electronics to the injection of trap states in semiconductor.Thus slowing down current collapse effect.But, these problems can only resolver Part is operated in " current collapse " under low voltage condition, because under low voltage condition, electronics is only to the trap of semiconductor surface State is filled, and when device is operated under high-voltage case, electronics will be more towards to the deep energy level in the semiconductor body of bottom Trap states are filled, and the trap states of specific surface are more difficult to discharge electronics, therefore, when device is operated in by these Deep Level Traps states Under high-voltage case, the effect that conventional technological means solves " current collapse " effect will be had a greatly reduced quality.

Content of the invention

Present invention is primarily targeted at providing a kind of hemt device with back side field plate structure, to overcome prior art In deficiency.

For achieving the above object, present invention employs following technical scheme:

A kind of hemt device with back side field plate structure, including source electrode, drain electrode and heterojunction structure, described source electrode and leakage Pole is by the two-dimensional electron gas electrical connection being formed in heterojunction structure, and described source electrode forms ohm with drain electrode with heterojunction structure and connects Touch, described heterojunction structure includes the first semiconductor layer and the second semiconductor layer setting gradually along direction initialization, the first semiconductor Layer is arranged between source electrode and drain electrode, and the first semiconductor layer surface is additionally provided with grid, described grid and the first semiconductor layer it Between form Schottky contacts, and, this hemt device also includes back surface field plate electrode, and described back surface field plate electrode is arranged at the second half and leads A side surface away from the first semiconductor layer of body layer.

As more one of preferred embodiment, the distance between described grid and source electrode are less than described grid and drain electrode The distance between.

As one of feasible embodiment, lateral edges of at least described back surface field plate electrode prolong to source electrode or drain directions Stretch, the orthographic projection of described back surface field plate electrode is all overlapping with grid both sides of the edge simultaneously.

Further, described back surface field plate electrode and grid or source electrode are electrically connected to form backgate field plate or back of the body source field plate.

Further, described source electrode and drain electrode are connected with the electronegative potential of power supply and high potential respectively.

As one of feasible embodiment, the both sides of the edge of described back surface field plate electrode are prolonged to source electrode and drain directions respectively Stretch.

Or, as one of feasible embodiment, described back surface field plate electrode only has lateral edges to source electrode or drain electrode side To extension.

Further, when described hemt device works, described grid and back surface field plate electrode are respectively by a control signal control System.

Further, this hemt device also includes supporting pedestal, and described support pedestal includes supporting substrate, described support group Plate is provided with time source electrode, secondary drain electrode and secondary grid, described source electrode, secondary drain electrode and secondary grid respectively with described source electrode, drain electrode and Grid electrically connects.

As more one of preferred embodiment, also can be provided between described first semiconductor layer and the second semiconductor layer In order to improve the insert layer of the mobility of the two-dimensional electron gas of heterojunction boundary.

As one of specific embodiment, described first semiconductor layer includes algan layer, described second semiconductor layer bag Include gan layer.

As one of specific embodiment, described insert layer may include aln layer.

Further, the thickness of described second semiconductor layer is less than the thickness of corresponding second semiconductor layer in existing hemt device Degree.Or, from another perspective, the thickness of described second semiconductor layer should be sufficiently small, make back surface field plate electrode be formed at different Enough near of two-dimensional electron gas at matter junction interface is such that it is able to effectively regulate and control the surface density of two-dimensional electron gas.

Postscript, " existing hemt device " described herein, mean have underlying device structures shown in Fig. 2, in the present invention The hemt device that can be obtained by any known approach before patent application day.

Further, described supporting substrate is mainly formed by the material having easy heat conduction and being difficult conductive characteristic.

Further, when described drain electrode connects high potential, source electrode connects electronegative potential, and grid connects the current potential less than threshold voltage, should When hemt device is in OFF state, back surface field plate electrode connects negative voltage;And work as described grid and meet current potential higher than threshold voltage, this hemt When device is in the conduction state, back surface field plate electrode connects high potential.

Another object of the present invention is to providing a kind of method preparing the hemt device that this has back side field plate structure, its Comprise the steps:

(1) formed on the selected substrate the heterojunction structure being mainly made up of the first semiconductor layer and the second semiconductor layer and Heterojunction structure forms the source electrode of Ohmic contact and drain electrode, and be formed at the first semiconductor layer surface and with the first semiconductor Layer forms the grid of Schottky contacts, thus obtaining hemt basal body structure;

(2) remove described selected substrate, and set away from a side surface of the first semiconductor layer in this second semiconductor layer Put back surface field plate electrode.

As one of preferred embodiment, step (2) also includes: after removing described selected substrate, to this second half Conductor layer carries out reduction processing, then arranges back surface field plate electrode on this second semiconductor layer.

As one of preferred embodiment, step (2) also includes: in this second semiconductor layer away from the first semiconductor One side surface of layer forms the first insulating medium layer, then arranges back surface field plate electrode on this first insulating medium layer.

Further, the method also includes: by main with one for this hemt basal body structure support group being made up of supporting substrate Seat connects, and secondary source electrode, secondary drain electrode and the secondary grid making to be distributed on described supporting substrate respectively with described source electrode, drain electrode and grid Pole electrically connects, and is then removed the operation of described selected substrate.

Further, in order to support pedestal and the method for hemt basal body structure connection to include face-down bonding or chip by described Bonding techniques.

Compared with prior art, the present invention at least has the advantage that by improveing to existing hemt device architecture, Including arranging back surface field plate electrode in the device structure, and use cooperatively with grid, realize in raceway groove two-dimensional electron gas effective Regulation and control, even and if electric field when device work redistribute so that hemt is operated under very high voltage, its drain electrode output is electric Stream can get caught up in the change of grid voltage, and farthest suppresses " current collapse effect ", meanwhile, the redistributing of electric field The effect improving breakdown voltage can be played again.

Brief description

Fig. 1 is a kind of cross-sectional view of the hemt device with back side field plate structure in the present invention;

Fig. 2 is the structural representation of existing hemt device;

Fig. 3 is one of structural representation of hemt device in the embodiment of the present invention 1, and wherein back surface field plate is to drain electrode 4 and source electrode 5 Respectively there is extension in direction;

Fig. 4 is two of the structural representation of hemt device in the embodiment of the present invention 1, and wherein back surface field plate is only to source electrode 5 direction There is extension;

Fig. 5 is three of the structural representation of hemt device in the embodiment of the present invention 1, and wherein back surface field plate is only to 4 directions that drain There is extension;

Fig. 6 is the structural representation of hemt device in the embodiment of the present invention 2, and wherein back surface field plate electrode 9 and grid 6 are electrically connected Connect;

Fig. 7 is the structural representation of the hemt device in the embodiment of the present invention 3, and wherein back surface field plate electrode 9 and source electrode 5 is electrically connected Connect;

Fig. 8 is a kind of structural representation of the hemt device with back side field plate structure in the present invention one typical embodiments Figure;

Fig. 9 is a kind of preparation technology stream of the hemt device with back side field plate structure in the present invention one typical embodiments Cheng Tu.

Specific embodiment

Refering to Fig. 2, the reason existing hemt device (as algan/gan device) produces current collapse phenomenon it is: work as device Drain electrode 4 apply high voltage, grid 6 apply less than threshold value voltage when, device will be off state, in the effect of electric field Under, in algan surface 11 and gan body, trapped electron is in negatively charged by 12 high field area class alms giver's trap states, in electrostatic In the presence of sensing, these negative electrical charges can make the two-dimensional electron gas equivalent of corresponding algan/gan interface 13 reduce, when this again It might even be possible to will be completely depleted for the two-dimensional electron gas in raceway groove when the surface density of a little trap states be sufficiently high.These are captured Electronics in trap, needs the regular hour just can discharge, the shortest time also musec order to be arrived, or even can be to the second Magnitude.When device transient state is opened, the two-dimensional electron gas quantity in raceway groove below grid will under the sensing of grid voltage significantly Improve, but in the out of contior region of grid 6, the two-dimensional electron gas in raceway groove be still controlled by the negative electrical charge of trap capture, Its quantity still very little, the electric conduction resistive making device big it is necessary to when trap states discharge completely electronics can be only achieved due Quantity, this have on-delay and the big phenomenon of electric conduction resistive it is simply that " current collapse ".

For solving the defect of aforementioned common hemt device, the present invention proposes a kind of hemt device with back of the body field plate structure Part, its core texture refers to Fig. 1, wherein supports pedestal role to be mechanical support and electrode extraction, former in explanation device During reason, this part is omitted.The source electrode 5 of this device, drain electrode 4 are located at the first semiconductor layer 3(such as algan) simultaneously, and point row Two ends, grid 6 also is located at the first semiconductor layer 3 one side, and between source electrode 5, drain electrode 4, and, grid 6 is apart from source electrode 5 distance Nearer.Back surface field plate electrode 9 is located at the second semiconductor layer 2(such as gan) simultaneously, and because the second semiconductor layer 2 has carried out over subtraction Thin, back surface field plate electrode 9 is nearer apart from the two-dimensional electron gas of heterojunction boundary, and the face that can effectively regulate and control two-dimensional electron gas is close Degree.When the drain electrode 4 of device connects high voltage, source electrode 5 connects 0 current potential, and grid 6 connects the current potential less than threshold voltage, and device is in OFF state When, back surface field plate electrode 9 can apply negative voltage, thus suppressing at the first semiconductor layer 3 surface 10 and in the second semiconductor layer body 11 for electronics capture, stop heterojunction boundary two-dimensional electron gas minimizing.Apply to be higher than threshold voltage when the grid 6 of device Current potential when, when device is in the conduction state, back surface field plate electrode 9 apply high voltage, additionally can induct at heterojunction boundary Going out two-dimensional electron gas 13, make up its loss, thus play suppression conducting resistance reducing, reducing the effect of on-delay, thus solving Certainly " current collapse " effect.

Referring to shown in Fig. 8 is one of the present invention one typical embodiments algan/gan hemt device again, its bag Include source electrode 5, drain electrode 4 and grid 6, back surface field plate electrode 9, support pedestal, insulating medium layer 8 and algan/gan heterojunction structure and Positioned at the two-dimensional electron gas of heterojunction boundary, source, drain electrode realize electrical connection by two-dimensional electron gas.Source, drain electrode are located at algan mono- Face, and form Ohmic contact with algan, grid 6 is located at algan one side, and forms Schottky contacts, back surface field plate electricity with algan Pole 9 is located at gan one side, and with gan every with insulating medium layer 8.This support pedestal has secondary source electrode 5 ', secondary drain electrode 4 ', secondary grid 6 ' and supporting substrate 7.Back surface field plate electrode 9 has the broader coverage than grid 6.

Aforementioned source electrode 5 ', secondary drain electrode 4 ', secondary grid 6 ' can by face-down bonding or wafer bonding techniques etc. respectively with Source electrode 5, drain electrode 4, grid 6 combine.

Postscript, it should be noted that the aforementioned insulating medium layer being arranged between back surface field plate electrode and the second semiconductor layer Also can omit.

Refer to Fig. 9 again, this hemt device can be prepared by following technique:

A) traditional algan/gan hemt device architecture is completed on substrate 1 material, i.e. hemt device body;

B) on supporting substrate 7, formed and comprise time source electrode 5 ', secondary drain electrode 4 ', the support pedestal of secondary grid 6 '.This support group Plate material can be any one material applicatory;

C) hemt device body and support pedestal are combined, form a combination, be characterized in the lining of hemt device body Bottom is topmost.Source electrode 5, drain electrode 4, grid 6 are electrically connected with secondary source electrode 5 ', secondary drain electrode 4 ', secondary grid 6 ' respectively;

D) adopt existing semiconducter process, substrate 1 material of combination is removed, outside only remaining algan/gan Prolong structure, and now gan layer topmost.

E) by gan mono- layer be thinned to suitable thickness using existing reduction process means.

F) on thinning gan, construct back surface field plate electrode 9;

G) being interconnected back surface field plate electrode 9 with source electrode 5 or grid 6, or back surface field plate electrode 9 is individually applied electric signal is made With.

Certainly, technical scheme also apply be applicable to mis-hemt, and its structure includes: source electrode, drain electrode and heterogeneous Structure (as algan/gan) and the two-dimensional electron gas being located at heterojunction boundary, back surface field plate electrode, support pedestal.Described source electrode with Drain electrode is located at algan one side, forms Ohmic contact with algan, by the two-dimensional electron gas electrical connection being formed in heterojunction structure. Described grid is located at algan one side, forms Schottky contacts with substrate.Described hemt device has back surface field plate electrode and a support group Seat, back surface field plate electrode is located at the second semiconductor layer (as gan) simultaneously.Described support pedestal comprises time source electrode, secondary drain electrode, secondary grid Pole, it is combined with source electrode, drain electrode, grid respectively.

Above technical solution of the present invention is summarized, in order that the public can better understand the technology hand of the present invention Section, and can be practiced according to the content of specification, below technical scheme is further described.

Embodiment 1 refers to Fig. 3, and this hemt has algan/gan.Gan is specially adulterated.Algan can mix Enter p-type impurity it is also possible to not be doped.The thickness of algan is about 15 to 30nm.

This hemt has drain electrode 4 and source electrode 5.Drain electrode 4 forms Ohmic contact with source electrode 5 with algan/gan, and with raceway groove in Two-dimensional electron gas form good electrical connection.Drain electrode 4 and source electrode 5 are (as ti/al/ti/au or ti/al/ni/ by multiple layer metal Au etc.) being annealed by quick high-temp forms Ohmic contact.

Further, this hemt has grid 6, between source electrode 5 and drain electrode 4, near close together, the grid 6 of source electrode 5 On algan.

Back surface field plate electrode 9 is located on gan, has overlapping in vertical direction with grid 6, and each to source, drain electrode 4 directions Have extension (or, only to drain electrode 4 or source electrode 5 direction extend, show back surface field plate electrode 9 refering to Fig. 4 and only prolong to source electrode 5 direction Stretch).

Wherein, insulating medium layer 8 also can be set between back surface field plate electrode 9 and gan.

This dielectric layer 8 can be by al2o3Deng composition it is possible to the process meanses such as pecvd, ald are deposited on gan.

Support pedestal supporting substrate 7 can adopt aln substrate, thickness be 100 ~ 1000um, secondary source electrode 5 ', secondary drain 4 ', Secondary grid 6 ' can adopt ti(50 ~ 100)/au(50 ~ 1000nm) metal level.

The operation principle that this has the hemt of back surface field plate is as follows: when increasing on grid 6 in the current potential of threshold voltage, raceway groove Middle two-dimensional electron gas are higher, and device is in opening;When the current potential less than threshold voltage is added on grid 6, in raceway groove Two-dimensional electron gas are depleted, and device is closed;Can be by being controlled to the current potential on grid 6, under control gate 6 Two-dimensional electron gas in corresponding raceway groove, thus the on off state of control device raceway groove.

Back surface field plate electrode 9 can be applied with independent electric signal control and (can also apply identical with grid 6 or source electrode 5 Current potential, the as shown in Figure 6 back surface field plate electrode 9 that is electrically connects with grid 6, realizes and the equipotential example of grid 6), and lead to Cross the control that back surface field plate electrode 9 plus different electric signals can be realized to two-dimensional electron gas 14 concentration in its corresponding raceway groove.

Embodiment 2 refers to Fig. 6, and this hemt has algan/gan.Gan is specially adulterated.Algan can mix Enter p-type impurity it is also possible to not be doped.The thickness of algan is about 15 to 30nm.

This hemt has drain electrode 4 and source electrode 5.Drain electrode 4 forms Ohmic contact with source electrode 5 with algan/gan, and with raceway groove in Two-dimensional electron gas form good electrical connection.Drain electrode 4 and source electrode 5 are (as ti/al/ti/au or ti/al/ni/ by multiple layer metal Au etc.) being annealed by quick high-temp forms Ohmic contact.

Further, this hemt has grid 6, between source electrode 5 and drain electrode 4, near close together, the grid 6 of source electrode 5 On algan.

Back surface field plate electrode 9 is located on gan, has overlapping in vertical direction with grid 6, and each to source, drain electrode 4 directions Have extension (or, only to drain electrode 4 or source electrode 5 direction extend, show back surface field plate electrode 9 refering to Fig. 5 and only prolong to 4 directions that drain Stretch).

Wherein, insulating medium layer 8 also can be set between back surface field plate electrode 9 and gan.

This dielectric layer 8 can be by al2o3Deng composition it is possible to the process meanses such as pecvd, ald are deposited on algan.

Support pedestal supporting substrate 7 can adopt aln substrate, thickness be 100 ~ 1000um, secondary source electrode 5 ', secondary drain 4 ', Secondary grid 6 ' can adopt ti(50 ~ 100)/au(50 ~ 1000nm) metal level.

The operation principle that this has the hemt of back surface field plate is as follows: when increasing on grid 6 in the current potential of threshold voltage, raceway groove Middle two-dimensional electron gas are higher, and device is in opening;When the current potential less than threshold voltage is added on grid 6, in raceway groove Two-dimensional electron gas are depleted, and device is closed;Can be by being controlled to the current potential on grid 6, under control gate 6 Two-dimensional electron gas in corresponding raceway groove, thus the on off state of control device raceway groove.

Back surface field plate electrode 9 applies and the equipotential control signal of grid 6, realizes to two-dimensional electron gas 14 in its corresponding raceway groove The control of concentration.

Embodiment 3 refers to Fig. 7, and this hemt has algan/gan.Gan is specially adulterated.Algan can mix Enter p-type impurity it is also possible to not be doped.The thickness of algan is about 15 to 30nm.

This hemt has drain electrode 4 and source electrode 5.Drain electrode 4 forms Ohmic contact with source electrode 5 with algan/gan, and with raceway groove in Two-dimensional electron gas form good electrical connection.Drain electrode 4 and source electrode 5 are (as ti/al/ti/au or ti/al/ni/ by multiple layer metal Au etc.) being annealed by quick high-temp forms Ohmic contact.

Further, this hemt has grid 6, between source electrode 5 and drain electrode 4, near close together, the grid 6 of source electrode 5 On algan.

Back surface field plate electrode 9 is located on gan, has overlapping in vertical direction with grid 6, and to source electrode 5, drain electrode 4 sides To respectively there being extension.

Wherein, insulating medium layer 8 also can be set between back surface field plate electrode 9 and gan.

This dielectric layer 8 can be by al2o3Deng composition it is possible to the process meanses such as pecvd, ald are deposited on algan.

Support pedestal supporting substrate 7 can adopt aln substrate, thickness be 100 ~ 1000um, secondary source electrode 5 ', secondary drain 4 ', Secondary grid 6 ' can adopt ti(50 ~ 100)/au(50 ~ 1000nm) metal level.

The operation principle that this has the hemt of back surface field plate is as follows: when increasing on grid 6 in the current potential of threshold voltage, raceway groove Middle two-dimensional electron gas are higher, and device is in opening;When the current potential less than threshold voltage is added on grid 6, in raceway groove Two-dimensional electron gas are depleted, and device is closed;Can be by being controlled to the current potential on grid 6, under control gate 6 Two-dimensional electron gas in corresponding raceway groove, thus the on off state of control device raceway groove.

Back surface field plate electrode 9 applies and the equipotential control signal of source electrode 5, realizes to two-dimensional electron gas 14 in its corresponding raceway groove The control of concentration.

Finally it should be noted that embodiments above, only in order to technical scheme to be described, is not intended to limit, this The those of ordinary skill in field it is understood that it still can be modified to the technical scheme described in aforementioned schemes, or Equivalent is carried out to wherein some technical characteristics;And these modifications or replacement, so that the essence of appropriate technical solution is taken off Spirit and scope from apparatus of the present invention scheme.

Claims (10)

1. a kind of hemt device with back side field plate structure, including source electrode (5), drain electrode (4) and heterojunction structure, described source Pole (5) with drain electrode (4) electrically connect by the two-dimensional electron gas being formed in heterojunction structure, and described source electrode (5) and drain (4) and Heterojunction structure forms Ohmic contact, and described heterojunction structure includes the first semiconductor layer (3) setting gradually along direction initialization and the Two semiconductor layers (2), the first semiconductor layer (3) is arranged between source electrode (5) and drain electrode (4), and the first semiconductor layer (3) surface It is additionally provided with grid (6), described grid (6) and the first semiconductor layer (3) form Schottky contacts it is characterised in that it also includes Back surface field plate electrode (9) and insulating medium layer, described insulating medium layer be formed directly into described second semiconductor layer (2) away from One side surface of the first semiconductor layer (3), described back surface field plate electrode (9) is formed directly into dielectric layer surface, and described second Semiconductor layer (2) is crossed through reduction processing, and the side away from the first semiconductor layer (3) of described second semiconductor layer (2) Surface is burnishing surface.
2. there is the hemt device of back side field plate structure according to claim 1 it is characterised in that at least described back surface field plate is electric One lateral edges of pole (9) extend to source electrode (5) or drain electrode (4) direction, the orthographic projection of described back surface field plate electrode (9) and grid simultaneously (6) both sides of the edge are all overlapping.
3. there is the hemt device of back side field plate structure according to claim 1 it is characterised in that described back surface field plate electrode (9) it is electrically connected to form backgate field plate or back of the body source field plate with grid (6) or source electrode (5).
4. there is the hemt device of back side field plate structure according to claim 1 it is characterised in that described source electrode (5) and leakage Pole (4) is connected with the electronegative potential of power supply and high potential respectively.
5. there is the hemt device of back side field plate structure according to claim 1 it is characterised in that described back surface field plate electrode (9) both sides of the edge extend to source electrode (5) and drain electrode (4) direction respectively, or described back surface field plate electrode (9) only has lateral edges Extend to source electrode (5) or drain electrode (4) direction.
6. there is the hemt device of back side field plate structure according to claim 1 it is characterised in that in described hemt device work When making, described grid (6) and back surface field plate electrode (9) are controlled by a control signal respectively.
7. there is the hemt device of back side field plate structure according to claim 1 it is characterised in that it also includes a support group Seat, described support pedestal includes supporting substrate (7), and described supporting substrate (7) is provided with time source electrode (5 '), secondary drain electrode (4 ') and secondary Grid (6 '), described source electrode (5 '), secondary drain electrode (4 ') and time grid (6 ') respectively with described source electrode (5), drain electrode (4) and grid (6) electrically connect.
8. there is the hemt device of back side field plate structure according to claim 1 it is characterised in that described first semiconductor layer (3) layer includes algan layer, and described second semiconductor layer (2) includes gan layer.
9. a kind of preparation method of the hemt device with back side field plate structure is it is characterised in that comprise the steps:
(1) selected substrate (1) above formed the heterojunction structure being made up of the first semiconductor layer (3) and the second semiconductor layer (2) and Heterojunction structure forms the source electrode (5) of Ohmic contact and drains (4), and be formed at the first semiconductor layer (3) surface and with the Semi-conductor layer (3) forms the grid (6) of Schottky contacts, thus obtaining hemt basal body structure;
(2) remove described selected substrate (1), and reduction processing is carried out to this second semiconductor layer (2), and make described the second half to lead A side surface away from the first semiconductor layer (3) of body layer (2) be burnishing surface, afterwards this second semiconductor layer (2) away from One side surface of the first semiconductor layer (3) directly forms insulating medium layer, directly arranges thereafter back surface field on this insulating medium layer Plate electrode (9).
10. there is the preparation method of the hemt device of back side field plate structure according to claim 9 it is characterised in that it is gone back Including: this hemt basal body structure is connected with by the support pedestal that supporting substrate (7) forms, and makes to be distributed in described supporting substrate (7) the secondary source electrode (5 ') on, secondary drain electrode (4 ') and time grid (6 ') are electric with described source electrode (5), drain electrode (4) and grid (6) respectively Connect, be then removed the operation of described selected substrate (1).
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