CN103730347A - Recycled silicon wafer texturing method - Google Patents
Recycled silicon wafer texturing method Download PDFInfo
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- CN103730347A CN103730347A CN201410024937.2A CN201410024937A CN103730347A CN 103730347 A CN103730347 A CN 103730347A CN 201410024937 A CN201410024937 A CN 201410024937A CN 103730347 A CN103730347 A CN 103730347A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000007788 liquid Substances 0.000 claims abstract description 34
- 239000002253 acid Substances 0.000 claims abstract description 22
- 238000005406 washing Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 40
- 238000004064 recycling Methods 0.000 claims description 40
- 210000002268 wool Anatomy 0.000 claims description 21
- 238000005516 engineering process Methods 0.000 claims description 18
- 235000008216 herbs Nutrition 0.000 claims description 18
- 239000003513 alkali Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 11
- 239000011259 mixed solution Substances 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 4
- 238000001039 wet etching Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 5
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000008155 medical solution Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005096 rolling process Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 238000007605 air drying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The invention provides a recycled silicon wafer texturing method. The method comprises the following steps of S10, emptying chemical liquid in the top tank of the process tank of a texturing device or a wet-etching device; S20, subjecting recycled silicon wafers to passing through the process tank and then entering a alkaline washing tank for alkaline washing; S30, enabling the alkaline-washed recycled silicon wafer to enter an acid tank. The recycled silicon wafer texturing method effectively solves the problem that recycled silicon wafer in the prior art are prone to flashing and thinning.
Description
Technical field
The present invention relates to battery manufacturing process technical field, in particular to a kind of etching method that recycles silicon chip.
Background technology
Fig. 1 shows the manufacturing process schematic diagram of cell piece of the prior art, as shown in Figure 1, the manufacturing process of cell piece mainly comprises making herbs into wool, diffusion, wet etching, PECVD(plasma enhanced chemical vapor deposition method), the step such as printing-sintering and testing package.The effect of above-mentioned steps is specific as follows:
Making herbs into wool: the mixed solution by nitric acid and hydrofluoric acid carries out making herbs into wool to silicon chip surface; The surface damage layer causing while removing silicon chip cutting; At silicon chip surface, form rugged surface and a large amount of holes, increase the light-receiving area on cell piece surface, reduce reflectivity, thereby improve the conversion efficiency of solar cell.
Diffusion: spread a laminar sublayer in P type substrate silicon, formed one deck P-N knot.
Wet etching: the mixed solution by nitric acid and hydrofluoric acid carries out etching to silicon chip; Etching silicon wafer edge P-N knot, avoids cell piece electric leakage; Polishing cell backside, plays mirror effect, makes sunlight reflected go back to silicon chip the inside, repeatedly utilizes.
PECVD: utilize low temperature plasma to make energy source, sample is placed on the electrode of glow discharge under low pressure, utilize glow discharge (or separately adding heater) to make sample be warmed up to predetermined temperature, then pass into appropriate reacting gas, gas, through series of chemical and plasma reaction, forms solid film at sample surfaces.
Printing-sintering: silk screen printing be utilize forme non-graphic part silk screen hole sealing and can not see through ink, the penetrating energy in picture and text part silk screen hole prints through the principle of ink.By silk screen tensioning and be securely fixed on screen frame, adopt manual or photochemical method, on silk screen, produce can see through that the picture and text part of ink and mesh seal can not be through the non-graphic part of ink.During printing, ink is put in to forme one side, the ink position with sdueegee (scraper) on screen printing forme applies certain pressure, and the other end to silk screen moves simultaneously.In this process, ink leaks to stock under the extruding of scraper from the silk screen through hole of picture and text part, thereby completes one-step print.
Making herbs into wool, diffusion, wet etching, PECVD and print each operation and all have defective item and produce, above-mentioned defective item is called recycling silicon chip, and above-mentioned recycling silicon chip need to be processed again.Fig. 2 shows the schematic flow sheet of the etching method of recycling silicon chip.As shown in Figure 2, the etching method of recycling silicon chip comprises step: load; By texturing slot, (it contains HNO successively to make to recycle silicon chip
3mixing material with HF), alkaline bath (it contains KOH liquid) and acid tank (it contains the mixing material of HCL and HF); Heated-air drying.After texturing slot, alkaline bath and acid tank, be also provided with DI water (deionized water) washing trough.
Recycling silicon chip, after one or many making herbs into wool is processed, there will be paillette in various degree, and part paillette lattice is obvious, easily causes assembly flower sheet.The recycling of silicon chip can increase paillette, the flower sheet quantity of cell piece, reduces the appearance ratings of finished product cell piece and processes, and increases production cost.What in addition, recycling silicon chip became is thinner, fragile.The secondary recycling processing method of silicon chip can make cell piece conversion efficiency low, and defective ratio is high.
Summary of the invention
The present invention aims to provide a kind of etching method that recycles silicon chip, to solve, recycles the problem that silicon chip is prone to paillette and attenuation in prior art.
To achieve these goals, according to an aspect of the present invention, provide a kind of etching method that recycles silicon chip, comprised the following steps: step S10: the liquid in the inverted draw cut of the technology groove of etching device or wet-method etching equipment is emptying; Step S20: make to recycle silicon chip and enter alkaline bath carry out alkali cleaning after technology groove; Step S30: make the recycling silicon chip after alkali cleaning enter acid tank.
Further, be provided with the upper roller and the bottom roller that are oppositely arranged in technology groove, in step S10, the emptying rear cleaning upper roller of liquid and bottom roller, to remove liquid residual on upper roller and bottom roller.
Further, in step S20, the making herbs into wool that recycles silicon chip is faced down through upper roller and bottom roller.
Further, between step S20 and step S30 and after step S30, also comprise water-washing step.
Further, technology groove is built-in with HNO
3mixed solution with HF.
Further, alkaline bath is built-in with KOH solution.
Further, the acid tank of etching device is built-in with the mixed solution of HCL and HF; The acid tank of wet-method etching equipment is built-in with HF solution.
Apply technical scheme of the present invention, the liquid in the technology groove of etching device or wet-method etching equipment is emptying, while recycling like this silicon chip through technology groove, only react with residual liquid, or do not react with liquid, but directly enter alkaline bath and acid tank.Can farthest retain the matte effect of silicon chip making herbs into wool for the first time and the thickness of silicon chip like this, can effectively reduce sour consumption, reduce fragment rate, promote conversion efficiency, the paillette that improves product qualified rate and reduce cell piece, reduces because battery paillette increases assembly outward appearance and spends sheet.
Accompanying drawing explanation
The Figure of description that forms the application's a part is used to provide a further understanding of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the manufacturing process schematic diagram of cell piece of the prior art;
Fig. 2 shows the schematic flow sheet of the etching method of recycling silicon chip of the prior art; And
Fig. 3 shows according to the schematic flow sheet of the embodiment of the etching method of recycling silicon chip of the present invention.
Embodiment
It should be noted that, in the situation that not conflicting, embodiment and the feature in embodiment in the application can combine mutually.Describe below with reference to the accompanying drawings and in conjunction with the embodiments the present invention in detail.
For the recycling silicon chip of mentioning in background technology, be prone to the problem of paillette and attenuation, the reason that inventor has carried out finding after a series of experimental verification being prone to paillette and attenuation is as follows:
Silicon chip is when the texturing slot, and the mixed solution by nitric acid and hydrofluoric acid carries out making herbs into wool to silicon chip surface.The object of above-mentioned technique is 1) surface damage layer that causes while removing silicon chip cutting.2) at silicon chip surface, form rugged surface and a large amount of holes, increase the light-receiving area on cell piece surface, reduce reflectivity, thereby improve the conversion efficiency of solar cell.And recycling silicon chip etching method etching method is identical for the first time with silicon chip, also need through texturing slot, the liquid of the inside can damage matte like this, also makes the rugged surface (matte) of silicon chip become gradually smooth, and then makes silicon chip easily become the paillette of similar mirror effect.In addition, again or repeatedly through texturing slot, can repeatedly react at the matte of silicon chip, can reduce like this thickness of silicon chip, and then easily occur the problem of attenuation.
For above-mentioned reason, the application has proposed a kind of effective solution.As shown in Figure 3, the preferred implementation of the etching method of recycling silicon chip comprises the following steps:
Step S10: the liquid in the technology groove of etching device or wet-method etching equipment (texturing slot or etching groove) is emptying;
Step S20: make to recycle silicon chip and enter alkaline bath carry out alkali cleaning after texturing slot, alkali cleaning is used for removing PN junction;
Step S30: make the recycling silicon chip after alkali cleaning enter acid tank.
Apply in this preferred implementation, can use etching device or wet-method etching equipment to recycle the making herbs into wool of silicon chip.Technology groove comprises inverted draw cut and kerve, kerve storage liquid, and the liquid in inverted draw cut directly contacts with silicon chip.In this preferred implementation, the liquid in the inverted draw cut of technology groove is emptying, while recycling like this silicon chip through texturing slot, only react with residual liquid, or do not react with liquid, but directly enter alkaline bath and acid tank.Can farthest retain the matte effect of silicon chip making herbs into wool for the first time and the thickness of silicon chip like this, can effectively reduce sour consumption, reduce fragment rate, promote conversion efficiency, the paillette that improves product qualified rate and reduce cell piece, reduces because battery paillette increases assembly outward appearance and spends sheet.
Preferably, while utilizing etching device, need proportioning finite concentration HF, HCL admixing medical solutions in acid tank, wherein the concentration of HCL amount is than high point of the prior art, and reason is the metal impurities that HCL can remove silicon chip surface, and HF can purify silicon chip cleanliness factor.
In texturing slot, be provided with the upper roller and the bottom roller that are oppositely arranged, in step S10, liquid cleans upper roller and bottom roller after discharging, to remove liquid residual on upper roller and bottom roller.After liquid that will be in texturing slot is discharged, can utilize clear water to clean upper roller and bottom roller, making does not like this have liquid completely on upper roller and bottom roller.
Or, in step S10, after liquid discharge, without cleaning upper roller and bottom roller, on upper roller and bottom roller, there is residual liquid.Like this, while manufacturing recycling silicon chip, some recycling silicon chips carry away liquid residual on upper roller and bottom roller through out-of-date meeting, and so can make does not have liquid completely yet on upper roller and bottom roller.
For the ease of follow-up diffusion technology, in step S20, the making herbs into wool that recycles silicon chip is faced down through upper roller and bottom roller.In addition, through experimental verification, while having residual liquid on upper roller and bottom roller, the making herbs into wool of recycling silicon chip faces up after alkaline bath and acid tank, on the making herbs into wool face of discovery recycling silicon chip, has rolling wheel stamp.Like this, the color after impact recycling is silicon chip film-coated is attractive in appearance, causes surface defective.Main cause is on roller, to have HF, HNO
3mixing medicine, the place corrosion of silicon chip and roller contact is too high, forms rolling wheel stamp.And while thering is residual liquid on upper roller and bottom roller, the making herbs into wool of recycling silicon chip faces down after alkaline bath and acid tank, on the making herbs into wool face of recycling silicon chip, there is no rolling wheel stamp, main cause is that the area that silicon chip contacts with bottom roller increases, the area of whole silicon chip all can touch roller, participates in liquid reaction more even.
Below in conjunction with specific embodiment, further illustrate beneficial effect of the present invention.
Embodiment mono-
The texturing slot of etching device (HF, HNO
3admixing medical solutions groove) inverted draw cut liquid flows back to kerve, guarantees the HF, the HNO that on upper roller in texturing slot and bottom roller, have not a particle of
3admixing medical solutions.After the certain density KOH of proportioning, HF, HCL, wherein the conductivity of KOH groove is at 12-15, and the conductivity of acid tank is at 650-690.Recycling silicon chip is directly after alkaline bath and acid tank, and recycling silicon chip surface is clean, and dark line is normal, matte after the brightness of sheet and normal former silicon wafer wool making is similar, the uniformity of diffused sheet resistance is poor 5.1%, and the efficiency of cell piece is 17.31%, and defective ratio is 4.8%.
Embodiment bis-
The concentration of change alkali groove, the conductivity that improves alkali groove is 18, and the texturing slot of etching device (the admixing medical solutions groove of HF, HNO3) inverted draw cut liquid is flow back to kerve, has the admixing medical solutions of some HF, HNO3 on the upper roller in assurance texturing slot and bottom roller.Recycling silicon wafer wool making is faced up, directly, after alkali groove, acid tank, find that the making herbs into wool face of some recycling silicon chips still has rolling wheel stamp, reason is that silicon chip local corrosion is too high, is not the porous silicon that silicon chip generates at technique participation chemical reaction.
According to the experiment condition of embodiment bis-, the etching device speed of service is set as the cell piece efficiency of 2.1 tracking recyclings, and data are as follows:
Other setting parameters are constant, and the change equipment speed of service is 1.8, follows the tracks of the cell piece efficiency of recycling, and data are as follows:
Wherein, Uoc refers to that voltage, the Isc of cell piece refer to that electric current, Rser refer to that series connection, Rsh refer to that parallel connection, FF refer to fill, Ncell refers to that transformation efficiency, Irev1 refer to that electric leakage, Count refer to sheet number.
Embodiment tri-
The technology groove of etching device (HF, HNO
3admixing medical solutions groove) inverted draw cut liquid flows back to kerve, guaranteeing has some HF, HNO on upper roller in technology groove and bottom roller
3admixing medical solutions, alkali groove, acid tank concentration proportioning are same as embodiment bis-.Recycling silicon wafer wool making faces down, directly after alkali groove, acid tank, on the making herbs into wool face of recycling silicon chip, there is no rolling wheel stamp, main cause is that the area that contact with bottom roller of silicon chip increases that (area of whole silicon chip all can touch roller, and participation liquid reacts more even.On bottom roller, carry a certain amount of HF, HNO
3admixing medical solutions, the cleanliness factor on cleaning silicon wafer surface to a certain extent.
Conductance at alkaline bath and acid tank is identical, under the identical prerequisite of the equipment speed of service, and the recycling technique of prior art and the application's recycling artistic face sheet statistics, the colored sheet statistics of fragment rate statistics and assembly is as follows:
Wherein, during experiment, the equipment speed of service is 2.0m/min, and alkali groove conductivity is 15ms, and acid tank conductivity is 660ms.Automatic makeup liquid measure HNO3 is 25/45ml, and HF is 25/92ml.The parameter of the recycling texturing slot of prior art is speed 2.5m/min, and temperature is 10 °.
| Contrast experiment | Surface proportion | Fragment rate | Assembly flower sheet |
| Prior art | 2.2% | 3.95% | 65% |
| The application | 2.7% | 1.67% | 16.5% |
Wherein, a general block assembly is to be together in series by 60 cell pieces, and surperficial proportion refers to 39 cell pieces that lattice is shinny in a block assembly.
By small lot batch manufacture, contrast, the cell piece parameter of the recycling technique of prior art and the application's recycling explained hereafter is as follows:
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. an etching method that recycles silicon chip, is characterized in that, comprises the following steps:
Step S10: the liquid in the inverted draw cut of the technology groove of etching device or wet-method etching equipment is emptying;
Step S20: make to recycle silicon chip and enter alkaline bath carry out alkali cleaning after described technology groove;
Step S30: make the described recycling silicon chip after alkali cleaning enter acid tank.
2. etching method according to claim 1, it is characterized in that, in described technology groove, be provided with the upper roller and the bottom roller that are oppositely arranged, in described step S10, the described liquid described upper roller of emptying rear cleaning and described bottom roller, to remove described liquid residual on described upper roller and described bottom roller.
3. etching method according to claim 1, is characterized in that, in described step S20, the making herbs into wool of described recycling silicon chip is faced down through described upper roller and described bottom roller.
4. etching method according to claim 1, is characterized in that, also comprises water-washing step between described step S20 and step S30 and after described step S30.
5. etching method according to claim 1, is characterized in that, described technology groove is built-in with HNO
3mixed solution with HF.
6. etching method according to claim 1, is characterized in that, described alkaline bath is built-in with KOH solution.
7. etching method according to claim 1, is characterized in that, the acid tank of described etching device is built-in with the mixed solution of HCL and HF; The acid tank of described wet-method etching equipment is built-in with HF solution.
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|---|---|---|---|
| CN201410024937.2A CN103730347B (en) | 2014-01-10 | 2014-01-10 | Recycled silicon wafer texturing method |
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|---|---|---|---|
| CN201410024937.2A CN103730347B (en) | 2014-01-10 | 2014-01-10 | Recycled silicon wafer texturing method |
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| CN103730347B CN103730347B (en) | 2017-01-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200527A (en) * | 2015-09-16 | 2015-12-30 | 国网天津市电力公司 | Texturing equipment and cleaning method thereof |
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|---|---|---|---|---|
| US4062102A (en) * | 1975-12-31 | 1977-12-13 | Silicon Material, Inc. | Process for manufacturing a solar cell from a reject semiconductor wafer |
| US20090280597A1 (en) * | 2008-03-25 | 2009-11-12 | Kapila Wijekoon | Surface cleaning and texturing process for crystalline solar cells |
| US20110079250A1 (en) * | 2009-10-01 | 2011-04-07 | Mt Systems, Inc. | Post-texturing cleaning method for photovoltaic silicon substrates |
| CN201796935U (en) * | 2010-09-29 | 2011-04-13 | 常州天合光能有限公司 | Single surface etching equipment through corrosive acid |
| CN102214726A (en) * | 2010-04-01 | 2011-10-12 | 浙江索日光电科技有限公司 | Method for treating flocking on surface of solar silicon slice |
| CN102496569A (en) * | 2011-12-31 | 2012-06-13 | 英利集团有限公司 | Texturing method of monocrystal N type solar cell slice |
-
2014
- 2014-01-10 CN CN201410024937.2A patent/CN103730347B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4062102A (en) * | 1975-12-31 | 1977-12-13 | Silicon Material, Inc. | Process for manufacturing a solar cell from a reject semiconductor wafer |
| US20090280597A1 (en) * | 2008-03-25 | 2009-11-12 | Kapila Wijekoon | Surface cleaning and texturing process for crystalline solar cells |
| US20110079250A1 (en) * | 2009-10-01 | 2011-04-07 | Mt Systems, Inc. | Post-texturing cleaning method for photovoltaic silicon substrates |
| CN102214726A (en) * | 2010-04-01 | 2011-10-12 | 浙江索日光电科技有限公司 | Method for treating flocking on surface of solar silicon slice |
| CN201796935U (en) * | 2010-09-29 | 2011-04-13 | 常州天合光能有限公司 | Single surface etching equipment through corrosive acid |
| CN102496569A (en) * | 2011-12-31 | 2012-06-13 | 英利集团有限公司 | Texturing method of monocrystal N type solar cell slice |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200527A (en) * | 2015-09-16 | 2015-12-30 | 国网天津市电力公司 | Texturing equipment and cleaning method thereof |
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