CN102496569A - Texturing method of monocrystal N type solar cell slice - Google Patents
Texturing method of monocrystal N type solar cell slice Download PDFInfo
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- CN102496569A CN102496569A CN2011104597041A CN201110459704A CN102496569A CN 102496569 A CN102496569 A CN 102496569A CN 2011104597041 A CN2011104597041 A CN 2011104597041A CN 201110459704 A CN201110459704 A CN 201110459704A CN 102496569 A CN102496569 A CN 102496569A
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Abstract
The embodiment of the invention discloses a texturing method of a monocrystal N type solar cell slice. The method comprises the following steps that: acid texturing is carried out on a monocrystal N type solar cell slice, wherein the surface quality of the monocrystal N type solar cell slice is not qualified, and a corroded first preset depth is greater than a depth of a PN node, so that a cell slice that has been processed by the acid texturing is obtained; and alkali texturing is carried out on the cell slice that has been processed by the acid texturing and a second preset depth is corroded, so that a monocrystal N type solar cell slice with a qualified surface is obtained. Because there is diffused boron on the surface of the monocrystal N type solar cell slice, the produced solar cells has a low qualified rate; therefore, acid texturing is firstly carried out on the monocrystal N type solar cell slice with the unqualified surface and thus the first preset depth is corroded by utilizing electrochemical corrosion of the acid texturing, so that a PN node structure is removed; and then, the alkali texturing is carried out again and the second preset depth is corroded, so that the surface of the monocrystal solar cell slice forms a pyramid-shaped texture surface; therefore, a light interception area of the cell slice surface can be substantially increased; reflection can be reduced; and the qualified rate of the surface of the monocrystal N type solar cell slice can be enhanced.
Description
Technical field
The present invention relates to solar cell and utilize the technology field again, more particularly, relate to a kind of monocrystalline N type solar battery slice etching method.
Background technology
At present, the manufacturing process of solar cell is fundamental normsization, and its main processing flow process is: silicon chip is through cleaning and making herbs into wool, and it is uneven to make that bright originally silicon chip surface becomes, and has increased the absorptivity of silicon chip to light; Through High temperature diffusion, with mixing N type impurity on the P type silicon substrate or with mixing p type impurity on the N type silicon substrate, thereby form PN junction; Passing through plasma etching and dephosphorization silex glass or Pyrex again removes the side of silicon chip and the oxide layer at the back side; At the diffusingsurface deposition layer of sin x of silicon chip film, reduce silicon chip through PECVD to reflection of incident light; Print back electrode, back of the body electric field and front electrode, sintering makes electrode and silicon chip form alloy structure, at last silicon chip is carried out electric performance test and stepping, at last the packing warehouse-in.
The monocrystalline silicon piece type is divided into two kinds on N type and P type, uses the solar cell of N type silicon wafer to manufacture to be called monocrystalline N type solar cell, in N type battery production process; Quality requirement to solar cell surface is strict especially; For the surface flaw is arranged, like spot, the underproof battery sheet of printed patterns; Need choose as utilizing sheet to put into production again again, production technology is identical with normal sheet with product quality.Owing to had blemish before utilizing sheet to put into production again,, had a strong impact on the qualification rate of finished product if still defective ratio is very high after the making herbs into wool of directly putting into production.
In order to improve the qualification rate of finished product, existing is to utilize the method for alkali making herbs into wool to monocrystalline N type solar cell reutilization technology scheme, and its process is: through KOH (NaOH), IPA, pure water (DI water) and making herbs into wool additive mixed liquor monocrystalline N type solar cell is carried out making herbs into wool; Form the pyramid matte; Increase the light-receiving area on battery sheet surface greatly, reduce reflection, to increase photonic absorption; Thereby improved the conversion efficiency of solar cell, improved the qualification rate of finished product.But because N type battery is that silicon chip is because the surface boron doping content is high, and the quality of the silicon chip surface of producing can not meet the demands after the boron-doping diffusion, the silicon chip surface qualification rate is low.
Therefore, how to remove the PN junction on surface,, become those skilled in the art's problem demanding prompt solution to improve the qualification rate on monocrystalline N type solar battery sheet surface.
Summary of the invention
In view of this, the invention provides a kind of monocrystalline N type solar battery slice etching method, remove the PN junction on surface, to improve the qualification rate on monocrystalline N type solar battery sheet surface.
In order to achieve the above object, the embodiment of the invention provides following technical scheme:
A kind of monocrystalline N type solar battery slice etching method may further comprise the steps:
1), surface monocrystalline N type solar battery sheet off quality is carried out sour making herbs into wool, first predetermined depth of corrosion obtains sour making herbs into wool monocrystalline solar cells sheet greater than the degree of depth of PN junction;
2), sour making herbs into wool monocrystalline solar cells sheet is carried out alkali making herbs into wool, corrode second predetermined depth, obtain the qualified monocrystalline solar cells sheet in surface.
Preferably, in the above-mentioned monocrystalline N type solar cell etching method, the acid of said sour making herbs into wool is the mixed liquor of nitric acid, hydrofluoric acid and pure water.
Preferably, in the above-mentioned monocrystalline N type solar cell etching method, said first predetermined depth is 0.8-2.5 μ m.
Preferably, in the above-mentioned monocrystalline N type solar cell etching method, the alkali of said alkali making herbs into wool is the mixed liquor of potassium hydroxide, isopropyl alcohol, pure water and making herbs into wool additive.
Preferably, in the above-mentioned monocrystalline N type solar cell etching method, said second predetermined depth is 2-5 μ m.
Can know by technique scheme; The monocrystalline N type solar cell etching method that the embodiment of the invention provides; At first be that surface monocrystalline N type solar battery sheet off quality is carried out sour making herbs into wool, corrode first predetermined depth, thereby obtain sour making herbs into wool monocrystalline solar cells sheet; Then sour making herbs into wool monocrystalline solar cells sheet is carried out alkali making herbs into wool, corrode second predetermined depth, obtain the qualified monocrystalline N type solar battery sheet of surface quality.Because there is the boron of diffusion in monocrystalline solar cells sheet surface; The solar battery sheet qualification rate of producing is low; Therefore at first surface monocrystalline solar cells sheet off quality is carried out sour making herbs into wool; Utilize the electrochemical corrosion of sour making herbs into wool, it is corroded first preset thickness, to remove the PN junction structure; And then carry out alkali making herbs into wool, and corrode second predetermined depth, make the surface of monocrystalline solar cells sheet form the pyramid matte, increased the light-receiving area on battery sheet surface greatly, reduce reflection, thereby improved the qualification rate on monocrystalline solar cells sheet surface.
Description of drawings
The schematic flow sheet of the monocrystalline N type solar battery slice etching method that Fig. 1 provides for the embodiment of the invention;
The structural representation of the monocrystalline N type solar battery sheet that the making herbs into wool that Fig. 2 provides for the embodiment of the invention is preceding;
The structural representation of the monocrystalline N type solar battery sheet after the sour making herbs into wool that Fig. 3 provides for the embodiment of the invention;
The structural representation of the monocrystalline N type solar battery sheet after the alkali making herbs into wool that Fig. 4 provides for the embodiment of the invention.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
The embodiment of the invention discloses a kind of monocrystalline N type solar battery slice etching method, remove the PN junction on surface, to improve the qualification rate on monocrystalline N type solar battery sheet surface.
Please refer to accompanying drawing 1, the schematic flow sheet of the monocrystalline N type solar battery slice etching method that Fig. 1 provides for the embodiment of the invention; The structural representation of the monocrystalline N type solar battery sheet that the making herbs into wool that Fig. 2 provides for the embodiment of the invention is preceding; The structural representation of the monocrystalline N type solar battery sheet after the sour making herbs into wool that Fig. 3 provides for the embodiment of the invention; The structural representation of the monocrystalline N type solar battery sheet after the alkali making herbs into wool that Fig. 4 provides for the embodiment of the invention.
For surface battery sheet process defective is processed into qualified product, the invention provides a kind of monocrystalline solar cells texturing method, comprising:
Step S1: sour making herbs into wool, first predetermined depth of corrosion is greater than the degree of depth of PN junction;
Surface solar battery sheet defective is picked out as utilizing sheet again, carried out sour making herbs into wool then, because N type solar battery sheet is the boron-doping diffusion; The concentration of the boron of diffusion back silicon chip surface is higher; The surperficial qualification rate of producing solar battery sheet is very low, and in order to improve the qualification rate of solar battery sheet, the present invention at first carries out sour making herbs into wool to silicon chip; Utilize the electrochemical corrosion boron that solar battery sheet is surperficial of sour making herbs into wool to remove; Corrode first predetermined depth, the PN junction structure on the solar battery sheet is removed totally, thereby obtained sour making herbs into wool monocrystalline solar cells sheet.
Step S2: alkali making herbs into wool, corrode second predetermined depth.
Solar battery sheet after peracid making herbs into wool is carried out alkali making herbs into wool again; Because acid is got rid of the PN junction of solar battery sheet, passes through alkali making herbs into wool again, the silicon of solar battery sheet and alkali reaction; Form positive pyramid matte in solar cell surface; Increase the light-receiving area on battery sheet surface greatly, reduced reflection, thereby improved the qualification rate of solar battery sheet.
The acid of the sour making herbs into wool in the method for monocrystalline solar cells making herbs into wool provided by the invention is the mixed liquor of nitric acid, hydrofluoric acid and pure water.Can make the acid solution of joining variable concentrations according to different needs, and the speed of the reaction of the brilliant N type of different acid solution merchandisers solar battery sheet is different, therefore the time of reaction also is different, and operating personnel just can as long as guarantee the degree of depth of corrosion.Acid making herbs into wool not only can be cleaned monocrystalline N type solar battery sheet but also can be removed the PN junction on monocrystalline N type solar battery sheet surface; Therefore can improve the degree of corrosion of the course of reaction of follow-up and alkali, help to improve the rate of finished products of monocrystalline N type solar battery sheet.
Because the purpose of this etching method is surface monocrystalline N defective type battery sheet to be processed into the normal battery sheet again remove the qualified products that the difference in thickness quality does not have difference.If corrosion is too shallow in the course of processing, blemish and PN junction might be removed unclean, and the electricity ginseng qualification rate of finished product battery will descend; If the degree of depth of corrosion is dark excessively, then silicon wafer thickness attenuation, silicon chip is broken easily, causes the qualification rate of finished product to reduce.Therefore in order to guarantee the thickness of the monocrystalline N type solar battery sheet after the making herbs into wool, must the PN junction on surface be removed totally simultaneously again, the present invention is set to 0.8-2.5 μ m through first predetermined depth after the test of many times.
The alkali of the alkali making herbs into wool in the method for monocrystalline solar cells making herbs into wool provided by the invention is the mixed liquor of potassium hydroxide, isopropyl alcohol, pure water and making herbs into wool additive.In actual production process; Because different custom and needing, the concentration of the aqueous slkali that system is joined is different, and the speed of the reaction of the brilliant N type of different aqueous slkali merchandisers solar battery sheet is different; Therefore the time of reaction also is different, and operating personnel just can as long as guarantee the degree of depth of corrosion.The present invention is the alkali making herbs into wool of on the basis of sour making herbs into wool, carrying out again; Anticaustic is carried out on surface in acid corrosion, can effectively improve the effect of caustic corrosion, makes the surface of battery sheet form positive pyramid matte; Improved the light-receiving area on battery sheet surface greatly; Reduce reflection, increased the absorption of photon, thereby improved the qualification rate of monocrystalline N type solar battery sheet.
In order to guarantee the thickness of final silicon chip, make silicon chip satisfy the requirement of monocrystalline N type solar battery sheet, the present invention is set to 2-5 μ m through the degree of depth of caustic corrosion after the test of many times.If the degree of depth of corrosion is dark excessively, then silicon wafer thickness attenuation, silicon chip is broken easily, causes the qualification rate of finished product to reduce.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (5)
1. a monocrystalline N type solar battery slice etching method is characterized in that, may further comprise the steps:
1), surface monocrystalline N type solar battery sheet off quality is carried out sour making herbs into wool, first predetermined depth of corrosion obtains sour making herbs into wool monocrystalline solar cells sheet greater than the degree of depth of PN junction;
2), sour making herbs into wool monocrystalline solar cells sheet is carried out alkali making herbs into wool, corrode second predetermined depth, obtain the qualified monocrystalline solar cells sheet in surface.
2. monocrystalline N type solar cell etching method according to claim 1 is characterized in that the acid of said sour making herbs into wool is the mixed liquor of nitric acid, hydrofluoric acid and pure water.
3. monocrystalline N type solar cell etching method according to claim 1 is characterized in that said first predetermined depth is 0.8-2.5 μ m.
4. monocrystalline N type solar cell etching method according to claim 1 is characterized in that the alkali of said alkali making herbs into wool is the mixed liquor of potassium hydroxide, isopropyl alcohol, pure water and making herbs into wool additive.
5. monocrystalline N type solar cell etching method according to claim 1 is characterized in that said second predetermined depth is 2-5 μ m.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730347A (en) * | 2014-01-10 | 2014-04-16 | 海南英利新能源有限公司 | Recycled silicon wafer texturing method |
| CN103924305A (en) * | 2013-01-14 | 2014-07-16 | 东莞市长安东阳光铝业研发有限公司 | Making method of quasi-monocrystalline silicon wafer suede |
| CN115172488A (en) * | 2022-05-31 | 2022-10-11 | 晶科能源(上饶)有限公司 | Solar cell and manufacturing method thereof |
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| JP2002158207A (en) * | 2000-11-22 | 2002-05-31 | Mimasu Semiconductor Industry Co Ltd | Method of recycling silicon single crystal wafer with copper films and recycled wafer |
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| JP2002158207A (en) * | 2000-11-22 | 2002-05-31 | Mimasu Semiconductor Industry Co Ltd | Method of recycling silicon single crystal wafer with copper films and recycled wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103924305A (en) * | 2013-01-14 | 2014-07-16 | 东莞市长安东阳光铝业研发有限公司 | Making method of quasi-monocrystalline silicon wafer suede |
| CN103730347A (en) * | 2014-01-10 | 2014-04-16 | 海南英利新能源有限公司 | Recycled silicon wafer texturing method |
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| CN115172488A (en) * | 2022-05-31 | 2022-10-11 | 晶科能源(上饶)有限公司 | Solar cell and manufacturing method thereof |
| CN115172488B (en) * | 2022-05-31 | 2023-10-20 | 晶科能源(上饶)有限公司 | Solar cell manufacturing method and solar cell |
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Application publication date: 20120613 |