CN101958367A - Surface microregion controllable modification process of monocrystalline silicon solar battery - Google Patents
Surface microregion controllable modification process of monocrystalline silicon solar battery Download PDFInfo
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- CN101958367A CN101958367A CN2010102264379A CN201010226437A CN101958367A CN 101958367 A CN101958367 A CN 101958367A CN 2010102264379 A CN2010102264379 A CN 2010102264379A CN 201010226437 A CN201010226437 A CN 201010226437A CN 101958367 A CN101958367 A CN 101958367A
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- modification process
- weak base
- surfactant
- silicon solar
- monocrystalline silicon
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- 230000004048 modification Effects 0.000 title claims abstract description 21
- 238000012986 modification Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000008569 process Effects 0.000 title claims abstract description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 239000004094 surface-active agent Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000007864 aqueous solution Substances 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 210000004027 cell Anatomy 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000007480 spreading Effects 0.000 claims description 4
- 238000003892 spreading Methods 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- -1 alcohol ether compound Chemical class 0.000 claims description 3
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 3
- 239000003921 oil Substances 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 238000010129 solution processing Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 11
- 239000011574 phosphorus Substances 0.000 abstract description 11
- 230000004044 response Effects 0.000 abstract description 4
- 238000005406 washing Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a surface microregion controllable modification process of a monocrystalline silicon solar battery, comprising the following step of: carrying out surface microregion modification and washing on a diffused monorustalline silicon piece by adopting the surface micro-region controllable modification process before electrodes are printed, namely treating the diffused monocrystalline silicon piece by using an aqueous solution containing weak base and surface active agents to remove microdefects and harmful impurities on the surface. Based on the surface microregion controllable modification process which uses surface active agents, the invention carries out selective modification treatment on the diffused monicrystalline silicon piece to reduce the influences of surface phosphorus and other various impurities on short-wave quantum response, thereby greatly improving the short-wave inner quantum efficiency of the battery and achieving very wide application prospect.
Description
Technical field:
The present invention relates to the surperficial microcell modification process in a kind of monocrystaline silicon solar cell preparation.
Background technology:
The efficient of single crystal silicon solar cell depends primarily on three aspects---extinction amount, photoelectricity quantum efficiency and photoelectronic collection efficiency.Wherein, the photoelectricity quantum efficiency is to describe the ratio that the photon conversion that is absorbed by solar cell becomes electronics.The efficient that improves single crystal silicon solar cell then must improve extinction amount, photoelectric conversion efficiency and collection efficiency simultaneously.The matte preparation is to reduce the reflection of light rate, increase the effective means of extinction amount, eliminate the complex centre of PN junction and can effectively improve the photoelectricity quantum efficiency, and the characteristics of the defective of monocrystalline silicon battery, impurity, resistivity and PN junction etc. there is material impact to the photoelectron collection efficiency.
Diffusion is the core process of single crystal silicon solar cell opto-electronic conversion, and the microstructure of diffusion rear surface and the quality of PN junction characteristic be the quality of decision battery quality directly.The silicon chip surface microstructure comprises that the top layer matte rises and falls and top layer objectionable impurities and various defect state, and these defect and impurities can produce material impact to the local concentration and the distributing homogeneity of phosphorus in the diffusion process.Therefore, surface microstructure directly influences the form of PN junction, thereby influences battery quality and performance.
According to the concentration gradient notion, from the surface to the wafer bulk in certain depth, the concentration of phosphorus is from high to low.And be subjected to the influence of matte state, defect and impurity, the CONCENTRATION DISTRIBUTION of surperficial phosphorus is also inhomogeneous.The particularly inactive phosphorus of phosphorus of surface high concentration has very big influence to the performance of battery, mainly shows shortwave quantum difference in response.On the other hand, the phosphorus of higher concentration can improve the contact resistance of metallization processes, and the power loss of this part is reduced, and fill factor, curve factor improves.Therefore, surperficial phosphorus concentration is in the contradiction state.
Experimental study shows that under the situation that does not change square resistance, the concentration of top layer regional area phosphorus objectionable impurities high more and the formation complex centre is many more, and then surface recombination is serious more, and short circuit current and open circuit voltage loss are big more, and photoelectric conversion efficiency is low more.Therefore, the modification on surface is handled become monocrystaline silicon solar cell one of the high efficiency development trend of marching toward.
Summary of the invention:
The object of the present invention is to provide a kind of influence that reduces surperficial phosphorus and other various impurity to the response of shortwave quantum, improve the controlled modification process of monocrystaline silicon solar cell surface microcell of the shortwave internal quantum efficiency of battery.
Technical solution of the present invention is:
The controlled modification process of a kind of monocrystaline silicon solar cell surface microcell, it is characterized in that: also adopt the controlled modification process of surperficial microcell to carry out surperficial microcell before the electrode printing monocrystalline silicon piece after the DIFFUSION TREATMENT and modify cleaning, the monocrystalline silicon piece after promptly spreading with the aqueous solution processing that contains weak base and surfactant is to remove the microdefect and the objectionable impurities on surface.
Weak base is alkylammonium class or betaines, and the weight percentage of weak base is 0.1～10% in the aqueous solution; The weight percentage of surfactant≤0.1%.
When monocrystalline silicon piece was handled in the aqueous solution that contains weak base and surfactant, the temperature that contains the aqueous solution of weak base and surfactant was 25～85 ℃, and the time is 30 seconds～10 minutes.
Surfactant is one or more in polymethyl siloxane, polyether modified silicon oil, phosphate, the higher alcohol ether compound.
The present invention is based on the controlled modification process of surperficial microcell that contains surfactant the silicon chip surface after spreading is carried out the selective modification processing, reduce the influence of surperficial phosphorus and other various impurity to the response of shortwave quantum, improve the shortwave internal quantum efficiency (electric current increase) of battery greatly, surface recombination reduces (open to press and increase), and is as shown in table 1.Has very wide application prospect.
Table 1. is through the monocrystaline silicon solar cell electrical property statistical form of finishing
| Voc/mV | Isc?/mA | FF/％ | η/％ | |
| Reference group | 0 | 0 | 0 | 0 |
| Test group | +1.8 | +16 | +0.15 | +0.13 |
The invention will be further described below in conjunction with embodiment.
Embodiment:
The controlled modification process of a kind of monocrystaline silicon solar cell surface microcell, also adopt the controlled modification process of surperficial microcell to carry out surperficial microcell before the electrode printing monocrystalline silicon piece after the DIFFUSION TREATMENT and modify cleaning, the monocrystalline silicon piece after promptly spreading with the aqueous solution processing that contains weak base and surfactant is to remove the microdefect and the objectionable impurities on surface.
Described weak base is alkylammonium class or betaines, and the weight percentage of weak base is 0.1～10% (example 0.1%, 5%, 10%) in the aqueous solution; The weight percentage of surfactant≤0.1% (example 0.09%, 0.05%, 0.01%).
When described monocrystalline silicon piece is handled in the aqueous solution that contains weak base and surfactant, the temperature that contains the aqueous solution of weak base and surfactant is 25～85 ℃ (25 ℃, 55 ℃, 85 ℃ of examples), and the time is 30 seconds～10 minutes (example 30 seconds, 5 minutes, 15 minutes).
Described surfactant is polymethyl siloxane (or in the polyether modified silicon oil, phosphate, higher alcohol ether compound one or more).
Claims (4)
1. the controlled modification process of monocrystaline silicon solar cell surface microcell, it is characterized in that: also adopt the controlled modification process of surperficial microcell to carry out surperficial microcell before the electrode printing monocrystalline silicon piece after the DIFFUSION TREATMENT and modify cleaning, the monocrystalline silicon piece after promptly spreading with the aqueous solution processing that contains weak base and surfactant is to remove the microdefect and the objectionable impurities on surface.
2. the controlled modification process of monocrystaline silicon solar cell surface microcell according to claim 1, it is characterized in that: weak base is alkylammonium class or betaines, the weight percentage of weak base is 0.1～10% in the aqueous solution; The weight percentage of surfactant≤0.1%.
3. the controlled modification process of monocrystaline silicon solar cell surface microcell according to claim 1 and 2, it is characterized in that: when monocrystalline silicon piece is handled in the aqueous solution that contains weak base and surfactant, the temperature that contains the aqueous solution of weak base and surfactant is 25～85 ℃, and the time is 30 seconds～10 minutes.
4. the controlled modification process of monocrystaline silicon solar cell surface microcell according to claim 1 and 2, it is characterized in that: surfactant is one or more in polymethyl siloxane, polyether modified silicon oil, phosphate, the higher alcohol ether compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102264379A CN101958367B (en) | 2010-07-14 | 2010-07-14 | Surface microregion controllable modification process of monocrystalline silicon solar battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102264379A CN101958367B (en) | 2010-07-14 | 2010-07-14 | Surface microregion controllable modification process of monocrystalline silicon solar battery |
Publications (2)
| Publication Number | Publication Date |
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| CN101958367A true CN101958367A (en) | 2011-01-26 |
| CN101958367B CN101958367B (en) | 2012-06-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496569A (en) * | 2011-12-31 | 2012-06-13 | 英利集团有限公司 | Texturing method of monocrystal N type solar cell slice |
| CN102731141A (en) * | 2011-04-07 | 2012-10-17 | 北京化工大学 | Polyaniline/n-type monocrystalline silicon combined electrode material and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040094510A1 (en) * | 2002-11-08 | 2004-05-20 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| US20050247674A1 (en) * | 2002-09-04 | 2005-11-10 | Merck Patent Gmbh | Etching pastes for silicon surfaces and layers |
| CN101241952A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Solar battery slice technology for efficient and low-cost film crystal silicon |
| EP1968123A2 (en) * | 2007-02-28 | 2008-09-10 | Centrotherm Photovoltaics Technology GmbH | Method for manufacturing silicon solar cells |
| CN101323955A (en) * | 2008-02-27 | 2008-12-17 | 苏州苏电微电子信息化学品研发中心有限公司 | Wool-making agent for monocrystalline silicon solar cell surface treatment and manufacturing method thereof |
| CN101599514A (en) * | 2009-07-10 | 2009-12-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of textured mono-crystalline silicon solar battery and preparation method thereof and preparation system |
-
2010
- 2010-07-14 CN CN2010102264379A patent/CN101958367B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050247674A1 (en) * | 2002-09-04 | 2005-11-10 | Merck Patent Gmbh | Etching pastes for silicon surfaces and layers |
| US20040094510A1 (en) * | 2002-11-08 | 2004-05-20 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| CN101241952A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Solar battery slice technology for efficient and low-cost film crystal silicon |
| EP1968123A2 (en) * | 2007-02-28 | 2008-09-10 | Centrotherm Photovoltaics Technology GmbH | Method for manufacturing silicon solar cells |
| CN101323955A (en) * | 2008-02-27 | 2008-12-17 | 苏州苏电微电子信息化学品研发中心有限公司 | Wool-making agent for monocrystalline silicon solar cell surface treatment and manufacturing method thereof |
| CN101599514A (en) * | 2009-07-10 | 2009-12-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of textured mono-crystalline silicon solar battery and preparation method thereof and preparation system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102731141A (en) * | 2011-04-07 | 2012-10-17 | 北京化工大学 | Polyaniline/n-type monocrystalline silicon combined electrode material and preparation method thereof |
| CN102731141B (en) * | 2011-04-07 | 2015-02-18 | 北京化工大学 | Polyaniline/n-type monocrystalline silicon combined electrode material and preparation method thereof |
| CN102496569A (en) * | 2011-12-31 | 2012-06-13 | 英利集团有限公司 | Texturing method of monocrystal N type solar cell slice |
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| CN101958367B (en) | 2012-06-13 |
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Effective date of registration: 20200720 Address after: 226200 888 Lin Yang Road, Qidong Economic Development Zone, Nantong, Jiangsu Patentee after: HANWHA SOLARONE (QIDONG) Co.,Ltd. Address before: Qidong City, Jiangsu province 226200 Nantong City Economic Development Zone No. 888 Lin Yang Lu Patentee before: JIANGSU HANWHA SOLAR CELL AND APPLIED ENGINEERING TECHNOLOGY RES CT Co.,Ltd. |