CN103728029B - Infared bolometer based on MEMS and preparation method thereof - Google Patents
Infared bolometer based on MEMS and preparation method thereof Download PDFInfo
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- CN103728029B CN103728029B CN201310712997.9A CN201310712997A CN103728029B CN 103728029 B CN103728029 B CN 103728029B CN 201310712997 A CN201310712997 A CN 201310712997A CN 103728029 B CN103728029 B CN 103728029B
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Abstract
The present invention relates to a kind of infared bolometer based on MEMS and preparation method thereof. Infared bolometer in the present invention comprises bridge floor, heat-conductivity conducting brachium pontis and bridge pier assembly; On bridge floor, be furnished with temperature sensitive layer; Heat-conductivity conducting brachium pontis has two, is respectively the first heat-conductivity conducting brachium pontis and the second heat-conductivity conducting brachium pontis, and the first heat-conductivity conducting brachium pontis and the second heat-conductivity conducting brachium pontis are oppositely disposed in the both sides of bridge floor; Bridge pier assembly comprises the first bridge pier and the second bridge pier, and the first bridge pier is respectively arranged with the bottom of the second bridge pier the first reading circuit tie point and the second reading circuit tie point that are electrically connected with temperature sensitive layer; Gap between bridge floor and the first reading circuit tie point or the second reading circuit tie point place plane is greater than the height of the first bridge pier or the second bridge pier. In the present invention, the height of bridge pier is less than the height of bridge floor, can reduce the area that bridge pier takies, and improves the effective area of device cell, improves the performance of device.
Description
Technical field
The present invention relates to infared bolometer, specifically a kind of infrared radiant heat based on MEMS is taken into accountIts preparation method.
Background technology
Infared bolometer is the detector of the infrared radiant heat that sends of a kind of detecting object. All are higher than definitelyThe object of zero degree has emitted radiation thermal property, and temperature is higher, and the gross energy giving off is also larger, shortwaveComposition also more. Near the thermal-radiating wavelength of object self transmitting normal temperature or normal temperature concentrates on far infraredWave band, cannot be identified by the human eye, therefore under without daylight, starlight, moonlight and other lighting conditions, and peopleThe object None-identified of eye to periphery. But the infrared radiant heat electromagnetic wave that these objects send can be by infraredDetector converts radiant heat signal to the signal of telecommunication of easy identification, then through processing after reach human eye canThe effect of identification, such detector is referred to as infared bolometer.
A kind of infared bolometer wherein can be surveyed the infrared radiant heat of 8-14 micron, this detector energyEnough survey the radiant heat that most of object sends, can diagnose for night vision, detection of fires, overheated part,Object temperature measures, responds to human body temperature etc., has been widely used in every profession and trade. Meanwhile, atmosphere pairThe radiated electromagnetic wave of this wavelength has less absorptivity, therefore can respond to longer distance, makes thisThe detector of one type is applicable to the atrocious weathers such as rain, cigarette, mist, snow.
Infared bolometer has various ways, wherein a kind of based on MEMS technology (also referred to asMEMS technology) infared bolometer there is low cost of manufacture, highly sensitive and can be operated in normalThe characteristics such as temperature state are used widely. Its basic spy hot cell is a kind of based on MEMS micro-bridge structureUnit, as shown in Figure 1. Whole unit is roughly square, mainly by 1, two heat-conductivity conducting bridge of bridge floorArm, and support this structure and the three parts compositions such as bridge pier assembly of electrical connection are provided, two heat conduction are ledBridge arm is respectively the first heat-conductivity conducting brachium pontis 3, the second heat-conductivity conducting brachium pontis 4, and bridge pier assembly comprises the first pictureUnit's connection 5, the second pixel connect 6, the first reading circuit tie points 7, the second reading circuit tie point 8,The first bridge pier 10, the second bridge pier 11. Bridge floor 1 is one the face that certain thickness is more flat, by absorbingThe material composition of infrared radiant heat, as silicon nitride polysilicon etc. In addition, the top of bridge floor 1 also coversHave the temperature sensitive layer 2 of one deck, temperature sensitive layer 2 is made up as vanadium oxide etc. of temperature sensing material, and the feature of this material is resistance spyProperty is suitable, and to variations in temperature sensitivity, the variation of temperature can cause its resistance value to have greatly changed.The equivalent circuit of total is just equivalent to a variable resistor Rs.
The operation principle of this micro-bridge structure unit as shown in Figure 2, when there being infrared radiant heat 9 to be radiated at bridge floorTime, most infrared radiant heat is absorbed by bridge floor, causes that bridge floor heats up, thereby causes covering bridgeThe resistance of the temperature sensing material above face changes, and the resistance of this variation is again by the reading circuit below bridge floorChange into the corresponding signal of telecommunication, then carry out subsequent treatment.
For radiant heat energy is farthest absorbed by bridge floor, thereby obtain maximum sensitivity, bridge floor belowConventionally can design a reflecting layer 13 made of aluminum, between bridge floor 1 and reflecting layer 13, have a gap12. This gap 12 is extremely important, the infra-red radiation that suitable gap can make part do not absorbed by bridge floorHeat is reflected back bridge floor and is again absorbed by bridge floor through the reflecting layer 13 of Crossing the bridge noodles below, has increased the sensitive of structureDegree. This gap 12 is usually designed to 1/4 of incident radiation electromagnetic wavelength. As normal for infrared thermal imagingWith the radiometer of 8-14 micron wave length, the height in its gap is usually designed to 2-2.5 micron. Multiple suchUnit can form array, as 320x240 array, array that 640x480 array is even larger etc., with realityThe output of existing video infrared image. The area of whole micro-bridge structure unit is generally no more than 45x45 micron,Little can reach 14x14 micron, less unit size can in unit are, form larger array,Realize higher resolution, also have lower manufacturing cost. Obviously, the size of unit is for becoming originalSay most crucial.
For obtaining such structure, the gap between bridge floor and the reflecting layer especially needing, its manufacturing processFlow process need to be used a kind of sacrifice layer conventionally. The effect of sacrifice layer is in the process of technique, structure to be propped upSupport, and finally the removing of technique, thereby the gap needing obtained.
The fabrication processing of the common infared bolometer based on MEMS as shown in Fig. 3 (a)～Fig. 3 (f),Specifically describe as follows:
Fig. 3 (a): the substrate of device. The substrate of device based on certain, this substrate can be various ways,As the disk that contains reading circuit, or monocrystalline substrate etc. Taking silicon substrate as example, its substrate is resistanceSuitable monocrystalline silicon disk, on this basis, first uses PECVD (chemical vapour deposition (CVD) that plasma strengthens)But be not limited to PECVD method deposits a layer thickness and is in monocrystalline substrate 21NitrogenizeSilicon (SiNx) film 22. And then deposition last layer metal is used for making metal connection. This layer of metal canBut be not limited to Al, Ti/TiN, thickness isAnd then adopt the method for photoetching+metal etchForm metal connection layout 23.
Fig. 3 (b): sacrifice layer and absorbed layer are made. First, with applying or growth one deck sacrifice layer 29, it is thickDegree is 2-2.5 μ m, and the material of this layer of sacrifice layer 29 should be exotic material, can bear follow-up high temperatureTechnique, as the PECVDSiNx depositing operation of 350 DEG C, material can be (but not being restricted to) polyimides(Polyimide). Then chemical wet etching above metal connection layout 23, forms the first bowl-shape bridge pier mouldSon 24, the second bridge pier mould 25. And then on sacrifice layer 29, deposit one deck PECVDSiNx layer, useMake the radiation absorption layer 26 of radiometer unit, and above metal connection layout 23, open the first connecting hole 27,The second connecting hole 28, prepares for metal afterwards connects.
Fig. 3 (c): the making of temperature sensitive layer. And then, heavy with PECVD, PVD or other corresponding methodsLong-pending last layer temperature sensing material chemical wet etching, to form needed figure, form temperature sensitive layer 30. This layer temperature sensitiveThe material of layer 30 can be but be not limited to polysilicon, vanadium oxide etc.
Fig. 3 (d): metal connecting layer is made. On device, deposit again last layer metal as Ti, the heat such as NiCr alloyLead the material that coefficients comparison is little. The figure that this metal etch forms is later metal connecting layer 31, and it plays twoEffect, one is the metal contact pattern 23 that connects bridge pier and bridge pier below, connects bridge pier in addition by brachium pontisWith the temperature sensitive layer 30 of conduction.
Fig. 3 (e): deposit again layer of sin x passivation layer 32 on device, play the effect of protection device.
Fig. 3 (f): device carries out release process after suitable cutting, empties whole sacrifice layer 29,Technique complete and etc. to be packaged.
As implied above, in traditional design and manufacture technology, the thickness of its sacrifice layer 29 determines gap. But,This technological design scheme has some defects. The first, if when the thickness of sacrifice layer 29 reaches 2.5 microns,The difficulty that realizes the first connecting hole 27 and the second connecting hole 28 in technique significantly increases, the light in the rim of a bowlCarve glue due to the rim of a bowl effect, thickness significantly increases, and photoetching process is not easy to control, and easily causes yield rate low.Add connecting hole 27,28 and be positioned at the bottom of the rim of a bowl, and the photo-etching mark position that is positioned at the rim of a bowl edge there is oneThe difference in height of 2.5 microns easily causes due to the photo-etching machine exposal exposure causing of having no good depth of field in photoetching processPattern edge is unintelligible, thereby easily causes connecting hole to lose efficacy, and causes yield rate low. The second, for ensureingElectrical equipment connectivity on bridge pier, the perforate of sacrifice layer 29 need to be made the rim of a bowl shape, as shown in Figure 4. ItsMetal connecting layer 31 adopts physical vapour deposition (PVD) (PVD) method conventionally, is characterized in that metal deposition process isVertically downward, if the Sidewall angles θ of sacrifice layer opening is larger, as approach 90 degree, heavy at sidewall like thisLong-pending metal, by considerably less, causes the poorly conductive of sidewall, even can cause nonconducting situation. Therefore,The opening sidewalls of sacrifice layer 29 can need an angle that is less than 60 degree to obtain good sidewall conduction conventionallyProperty. Like this, the cross section of sacrifice layer 29 openings can be an inverted trapezoidal, under the opening diameter d2 of top can be greater thanThe opening diameter d1 of side, its difference d2-d1 can be expressed as:
d2-d1=2dcos(θ)
In the situation that d is 2.5 microns, d2-d1 can reach 2.5 microns. Cause so the upper table of bridge pierFace needs larger area. Because bridge pier mainly plays mechanical support and conduction, to the property of device cellCan be without any help. The area that bridge pier takies is larger, and the effective area of device cell is less, and performance morePoor. Larger bridge pier area for larger device cell as ignored the unit of 45x45 micron, but rightAs can not ignore the unit of 14x14 micron, can significantly reduce the significant surface of device in less device cellLong-pending, thus the performance of device significantly reduced.
Therefore from above two aspects, if can reduce the thickness of sacrifice layer, can keep again simultaneouslyThe gap of the 2-2.5 micron needing between bridge floor and reflecting layer is very important during to gadget unit.
Summary of the invention
The present invention is directed to the problems referred to above, a kind of infared bolometer based on MEMS and preparation method thereof be provided,This infared bolometer can obtain enough bridge floors in the time making in using thinner sacrificial layer thicknessGap.
The technical scheme of a kind of infared bolometer based on MEMS in the present invention is: it comprise bridge floor,Heat-conductivity conducting brachium pontis and bridge pier assembly; On described bridge floor, be furnished with temperature sensitive layer; Described heat-conductivity conducting brachium pontis hasTwo is respectively the first heat-conductivity conducting brachium pontis and the second heat-conductivity conducting brachium pontis, described the first heat-conductivity conducting brachium pontisBe oppositely disposed in the both sides of described bridge floor with described the second heat-conductivity conducting brachium pontis; Described bridge pier assembly comprises respectivelyThe first bridge pier that is arranged in described the first heat-conductivity conducting brachium pontis and described the second heat-conductivity conducting brachium pontis end below withThe second bridge pier, the bottom of described the first bridge pier and described the second bridge pier is respectively arranged with described temperature sensitive layer and is electrically connectedThe the first reading circuit tie point connecing and the second reading circuit tie point; Described bridge floor and described first is read electricityGap between road tie point or described the second reading circuit tie point place plane be greater than described the first bridge pier orThe height of the second bridge pier described in person.
Further, the height of described the first bridge pier or described the second bridge pier is 0.3-1.5 micron, described betweenGap is 1-4 micron.
Further, described the first heat-conductivity conducting brachium pontis and described the second heat-conductivity conducting brachium pontis are respectively L shaped.
The technical scheme of the preparation method of a kind of infared bolometer based on MEMS in the present invention is: itsComprise the following steps:
(a) substrate of device: on substrate, deposit one deck silicon nitride film or silica, and then depositionLast layer metal is used for making metal and connects, and then adopts the method for photoetching+metal etch to form metal connection layoutShape;
(b) sacrifice layer and absorbed layer are made: on silicon nitride film and metal connection layout, apply or growthOne deck sacrifice layer; Then chemical wet etching above metal connection layout, form the first bowl-shape bridge pier mould,The second bridge pier mould; And then on sacrifice layer, deposit one deck absorbed layer, and open above metal connection layoutThe first connecting hole, the second connecting hole; This absorbed layer applies the prestressing force of a negative value in technical process;
(c) making of temperature sensitive layer: then, deposit one deck temperature sensing material chemical wet etching to form on absorbed layerTemperature sensitive layer;
(d) making of metal connecting layer: deposit again last layer metal on device, and etching forms metal even laterConnect layer;
(e) on device, deposit again one deck passivation layer, this passivation layer in technical process, apply one on the occasion of in advance shouldPower;
(f) device carries out release process after cutting, empties whole sacrifice layers, and technique completes and waits forEncapsulation.
Further, described silicon nitride film or silicon dioxide thickness areDescribed metal connectsThe thickness of map interlinking shape is
Further, it is-50～-500MPa that described absorbed layer applies prestressing force in technical process, described passivationThe prestressing force that layer applies in technical process is+50～+ 500MPa.
Technique effect of the present invention is: the bolometer in the present invention, the height of its bridge pier is less than bridge floorHighly, can reduce the area that bridge pier takies, improve the effective area of device cell, improve the performance of device.Method in the present invention can reduce the thickness of sacrifice layer greatly, applies different in technical process according to designStress, makes each layer film have different prestressing force, and after device discharges by the time, sacrifice layer disappears, brachium pontisStructure under prestressed effect, the warpage that self-assembling formation is certain, thus reach bridge floor with respect to bridge pier planeIn height get a promotion. Like this, even if thinner sacrifice layer also can obtain the bridge floor height needing, andAnd the height of bridge floor is determined by prestressing force, can regulate by applying different prestressing force the height of bridge floor.
Brief description of the drawings
Fig. 1 is the structural representation of the infared bolometer based on MEMS.
Fig. 2 is the fundamental diagram of infared bolometer.
The process chart that Fig. 3 (a)～Fig. 3 (f) is infared bolometer.
Fig. 4 is the cross-sectional view of infared bolometer metal junction.
Fig. 5 (a), Fig. 5 (b) apply the structural deformation schematic diagram after prestressing force for the present invention.
Fig. 6 is finite element simulation structure chart.
Fig. 7 is FEM Numerical Simulation figure.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
In Fig. 1～Fig. 7, comprise that bridge floor 1, temperature sensitive layer 2, the first heat-conductivity conducting brachium pontis 3, the second heat conduction leadsBridge arm 4, the first pixel connect 5, the second pixel connects 6, the first reading circuit tie points 7, second and readsGo out circuit tie point 8, the first bridge piers 10, the second bridge pier 11, gap 12, reflecting layer 13, substrate 21,Silicon nitride or silica membrane 22, metal connection layout 23, the first bridge pier mould 24, the second bridge pier mouldSon 25, absorbed layer 26, the first connecting hole 27, the second connecting hole 28, sacrifice layer 29, metal connecting layer 31,Passivation layer 32 etc.
As shown in Fig. 1, Fig. 5 (b), Fig. 6 and Fig. 7, a kind of infared bolometer based on MEMS,Comprise bridge floor 1, heat-conductivity conducting brachium pontis and bridge pier assembly.
On bridge floor 1, be furnished with temperature sensitive layer 2. Temperature sensitive layer 2 is made up as vanadium oxide etc. of temperature sensing material.
Heat-conductivity conducting brachium pontis has two, is respectively the first heat-conductivity conducting brachium pontis 3 and the second heat-conductivity conducting brachium pontis 4,The first heat-conductivity conducting brachium pontis 3 and the second heat-conductivity conducting brachium pontis 4 are oppositely disposed in the both sides of bridge floor 1. First leadsThermal conducting brachium pontis 3 and the second heat-conductivity conducting brachium pontis 4 are respectively L shaped, can certainly be " one " fonts,Can be even around multiple " one " font composition around going.
Bridge pier assembly comprises and is arranged in the first heat-conductivity conducting brachium pontis 3 and the second heat-conductivity conducting brachium pontis 4 endsThe first bridge pier 10 of below and the bottom of the second bridge pier 11, the first bridge piers 10 and the second bridge pier 11 arrange respectivelyHave and temperature sensitive layer 2 the first reading circuit tie point 7 being electrically connected and the second reading circuit tie point 8; The first bridgePier 10 and the top of the second bridge pier 11 are respectively arranged with that the first pixel is connected 5, the second pixel connects 6.
Between bridge floor 1 and the first reading circuit tie point 7 or the second reading circuit tie point 8 place planesGap 12 is greater than the height of the first bridge pier 10 or the second bridge pier 11. The first bridge pier 10 or the second bridge pier11 height is generally 0.3-1.5 micron, and gap 12 is 1-4 micron.
The preparation method of the above-mentioned infared bolometer based on MEMS, comprises the following steps:
(a) substrate of device: substrate can be various ways, as the disk that contains reading circuit, or monocrystallineSilicon substrate etc. Taking silicon substrate as example, its substrate is the monocrystalline silicon disk that resistance is suitable, on this basis,First with PECVD but be not limited to PECVD method and deposit a layer thickness be in monocrystalline substrate 21Silicon nitride (SiNx) film 22. And then deposition last layer metal is used for making metal evenConnect, this layer of metal can be but be not limited to Al, Ti/TiN, and thickness isThen adopt lightThe method of quarter+metal etch forms metal connection layout 23;
(b) sacrifice layer and absorbed layer are made: at silicon nitride or silica membrane 22 and metal connection layoutOn 23, apply or growth one deck sacrifice layer 29, its thickness is 0.5-1 μ m, and the material of this layer of sacrifice layer 29 isExotic material, can bear follow-up high-temperature technology, as the PECVDSiNx depositing operation of 350 DEG C, materialMaterial can be (but not being restricted to) polyimides (Polyimide); Then above metal connection layout 23Chemical wet etching, forms bowl-shape the first bridge pier mould 24, the second bridge pier mould 25; And then at sacrifice layer 29Upper deposition one deck PECVDSiNx, as the radiation absorption layer 26 of radiometer unit, and at metal connection layoutThe first connecting hole 27, the second connecting hole 28 are opened in shape 23 tops, prepare for metal afterwards connects; This suctionReceive the prestressing force that layer 26 applies a negative value in technical process, for example-50～-500MPa. Apply negative valuePrestressed method can be by the technological parameter in adjusting process process as process gas kind, process gasPower ratio of flow, chamber temp, temperature of heat plate, radio-frequency power supply power, low-and high-frequency radio-frequency power supply etc.Taking adopt model that U.S. Novellus company manufactures as the PECVD film deposition equipment of ConceptOne asExample, this equipment has two radio frequency power sources, and one is 13.56MHz high-frequency radio frequency power supply, and another one is90-450KHz low frequency radio frequency power supply. The power menu of a generation-216MPa is as follows:
Table 1-216MPa technological parameter
| Parameter | Parameter |
| Vacuum pressure when technique | 2.8Torr |
| Technological temperature | 350℃ |
| Process gas SiH4 | 1 liter/min |
| Ammonia NH3 | 5 liters/min |
| Sedimentation time (monolithic) | 7.0 second |
| General power | 700W |
| High frequency power | 590W |
| Low frequency power | 110W |
| Silicon nitride film thickness | 2000A |
| Stress | -216MPa |
| Stress repeatability | +／-20MPa |
It should be noted that, this process menu and the equipment of implementing this technique are only for illustrating the feasible of techniqueProperty, the present invention is not limited to this equipment and this process menu.
(c) making of temperature sensitive layer: then, use PECVD, PVD or other corresponding methods at absorbed layerOn 26, deposit one deck temperature sensing material chemical wet etching to form temperature sensitive layer 30; Temperature sensing material can be but be not limited toPolysilicon, vanadium oxide etc.
(d) making of metal connecting layer: on device, deposit again last layer metal, as Ti, the thermal conductances such as NiCr alloyThe material that coefficients comparison is little, and etching forms metal connecting layer 31 later;
(e) on device, deposit again layer of sin x passivation layer 32, play the effect of protection device. This passivation layer 32In technical process, apply one on the occasion of prestressing force, for example+50～+ 500MPa. Apply on the occasion of prestressedMethod can be by the technological parameter in adjusting process process as process gas kind, process gas flow, chamberPower ratio of room temperature, temperature of heat plate, radio-frequency power supply power, low-and high-frequency radio-frequency power supply etc. To adoptThe PECVD film deposition equipment that the model that Novellus company of the U.S. manufactures is ConceptOne is example, shouldEquipment has two radio frequency power sources, and one is 13.56MHz high-frequency radio frequency power supply, and another one is90-450KHz low frequency radio frequency power supply. The power menu of a generation+216MPa is as follows:
Table 2+216MPa technological parameter
| Parameter | Parameter |
| Vacuum pressure when technique | 2.8Torr |
| Technological temperature | 350℃ |
| Process gas SiH4 | 1 liter/min |
| Ammonia NH3 | 5 liters/min |
| Sedimentation time (monolithic) | 7.0 second |
| General power | 700W |
| High frequency power | 290W |
| Low frequency power | 410W |
| Silicon nitride film thickness | 2000A |
| Stress | +216MPa |
| Stress repeatability | +／-20MPa |
It should be noted that, this process menu and the equipment of implementing this technique are only for illustrating the feasible of techniqueProperty, the present invention is not limited to this equipment and this process menu.
(f) device through cutting after carry out release process, empty whole sacrifice layer 29, technique complete and etc.To be packaged.
As shown in Figure 6, Figure 7, by finite element analysis software to a kind of area be the device list of 25x25 micronMeta-model has carried out applying the deformation analysis after prestressing force, and this element adopts " L " shape brachium pontis, brachium pontis overall length 43.5Micron, cross-sectional width is 1 micron. Brachium pontis material is that bottom is silicon nitride, intermetallic metal titanium, upper strata nitrogenizeThe common structure of silicon, thickness is respectively from bottom to up: 2000A, 1000A, 2000A. At upper and lower SIN layerStress be-216MPa and+when 216MPa, bridge floor the center displacement 1.55um, that is to say bridge deck lifting1.55 microns, reach the described result of invention.
Bolometer in the present invention, the height of its bridge pier is less than the height of bridge floor, can reduce that bridge pier takiesArea, the effective area of raising device cell, the performance of raising device. Method in the present invention can be fallen greatlyThe thickness of low sacrifice layer applies different stress according to design in technical process, and each layer film is had notWith prestressing force, after by the time device discharges, sacrifice layer disappears, bridge arm structure under prestressed effect,The warpage that self-assembling formation is certain, in height gets a promotion with respect to bridge pier plane thereby reach bridge floor. Like this,Even if thinner sacrifice layer also can obtain the bridge floor height needing, and the height of bridge floor determines by prestressing force,Can regulate by applying different prestressing force the height of bridge floor.
The present invention has the following advantages: the device cell area that 1) bridge pier takies greatly reduces, and it is right with it to makeThe effective area of the device cell of answering increases, and the performance of device is improved; 2) complete in technological processIn constant situation, can produce the device cell of different bridge floor height to be applicable to different application. InstituteThe special feature needing is exactly that some film in technological process is applied to different prestressing force, and this is technologicRealize conventionally than being easier to; 3) in traditional design and processes flow process, if need to change bridge floor height, removeNeed to develop the process menu of different sacrificial layer thickness, even relate to the change of sacrificial layer material, costHigher. And this problem does not exist in the present invention. 4) because change has occurred the thickness of sacrifice layer, bringIn design there is change in the size of bridge pier and position, needs thus the whole photo etched masks to device cellVersion redesigns, and manpower expense and cost of raw and processed materials are all very large. 5) if device cell because applicationThe height that needs bridge floor exceed 2.5 microns, adopt conventional process flow to need the high accuracy photoetching of the large depth of fieldMachine, equipment purchase and maintenance cost are very high. And the present invention adopt method can improve device performance, carryThe applicability of high device technology flow process, reduces the difficulty of process exploitation and the requirement to process equipment, andReach eventually the effect of the production cost that reduces device.
Claims (6)
1. the infared bolometer based on MEMS, comprise bridge floor (1), heat-conductivity conducting brachium pontis andBridge pier assembly; On described bridge floor (1), be furnished with temperature sensitive layer (2); Described heat-conductivity conducting brachium pontis has two, pointNot the first heat-conductivity conducting brachium pontis (3) and the second heat-conductivity conducting brachium pontis (4), described the first heat-conductivity conducting brachium pontis(3) be oppositely disposed in the both sides of described bridge floor (1) with described the second heat-conductivity conducting brachium pontis (4); Described bridgePier assembly comprises and is arranged in described the first heat-conductivity conducting brachium pontis (3) and described the second heat-conductivity conducting brachium pontis (4)First bridge pier (10) and the second bridge pier (11) of below, end, described the first bridge pier (10) and described secondThe bottom of bridge pier (11) is respectively arranged with the first reading circuit tie point being electrically connected with described temperature sensitive layer (2)(7) with the second reading circuit tie point (8); It is characterized in that: described bridge floor (1) and described first is readGap (12) between circuit tie point (7) or described the second reading circuit tie point (8) place planeBe greater than the height of described the first bridge pier (10) or described the second bridge pier (11).
2. according to the infared bolometer based on MEMS claimed in claim 1, it is characterized in that: described inThe height of the first bridge pier (10) or described the second bridge pier (11) is 0.3-1.5 micron, described gap (12)For 1-4 micron.
3. according to the infared bolometer based on MEMS described in claim 1 or 2, it is characterized in that:Described the first heat-conductivity conducting brachium pontis (3) is respectively L shaped with described the second heat-conductivity conducting brachium pontis (4).
4. a preparation method for the infared bolometer based on MEMS, is characterized in that, comprises following stepRapid:
(a) substrate of device: at substrate (21) upper deposition one deck silicon nitride or silica membrane (22),And then deposition last layer metal is used for making metal and connects, then adopt the method for photoetching+metal etch to formMetal connection layout (23);
(b) sacrifice layer and absorbed layer are made: on silicon nitride film (22) and metal connection layout (23)Apply or growth one deck sacrifice layer (29); Then metal connection layout (23) top chemical wet etching, shapeBecome bowl-shape the first bridge pier mould (24), the second bridge pier mould (25); And then on sacrifice layer (29)Deposition one deck absorbed layer (26), and open the first connecting hole (27), the in metal connection layout (23) topTwo connecting holes (28); This absorbed layer (26) applies the prestressing force of a negative value in technical process;
(c) making of temperature sensitive layer: then, at absorbed layer (26) upper deposition one deck temperature sensing material chemical wet etchingTo form temperature sensitive layer (30);
(d) making of metal connecting layer: deposit again last layer metal on device, and etching forms metal even laterConnect layer (31);
(e) on device, deposit one deck passivation layer (32), this passivation layer (32) applies one in technical process againOn the occasion of prestressing force;
(f) device carries out release process after cutting, empties whole sacrifice layer (29), and technique completes alsoEtc. to be packaged.
5. according to the preparation method of the infared bolometer based on MEMS claimed in claim 4, its spyLevy and be: described silicon nitride or silica membrane (22) thickness isDescribed metal connectsThe thickness of figure (23) is
6. according to the preparation method of the infared bolometer based on MEMS described in claim 4 or 5,It is characterized in that: it is-50～-500MPa that described absorbed layer (26) applies prestressing force in technical process, described bluntThe prestressing force that change layer (32) applies in technical process is+50～+ 500MPa.
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| CN203269550U (en) * | 2013-02-04 | 2013-11-06 | 烟台睿创微纳技术有限公司 | Tower-type anchor of uncooled infrared detector |
| CN103424224A (en) * | 2013-07-24 | 2013-12-04 | 无锡微奇科技有限公司 | Micro-machined vacuum sensor |
| CN203643027U (en) * | 2013-12-19 | 2014-06-11 | 无锡微奇科技有限公司 | MEMS-based infrared bolometer |
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| CN203269550U (en) * | 2013-02-04 | 2013-11-06 | 烟台睿创微纳技术有限公司 | Tower-type anchor of uncooled infrared detector |
| CN103424224A (en) * | 2013-07-24 | 2013-12-04 | 无锡微奇科技有限公司 | Micro-machined vacuum sensor |
| CN203643027U (en) * | 2013-12-19 | 2014-06-11 | 无锡微奇科技有限公司 | MEMS-based infrared bolometer |
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