CN103727884A - Bonding tool detection method - Google Patents
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- CN103727884A CN103727884A CN201210393136.4A CN201210393136A CN103727884A CN 103727884 A CN103727884 A CN 103727884A CN 201210393136 A CN201210393136 A CN 201210393136A CN 103727884 A CN103727884 A CN 103727884A
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Abstract
A bonding tool detection method includes the steps of firstly, providing an area, wherein the area is provided with a first wafer with a first alignment pattern and a second wafer with a second alignment pattern, and the area is formed in a surrounding mode by embedding the first alignment pattern into the second alignment pattern when the front face of the first wafer is attached to the back face of the second wafer; secondly, providing a bonding tool so that the front face of the first wafer and the front face of the second wafer can be bonded; thirdly, conducting illumination through light rays, and obtaining a first image and a second image on a screen; fourthly, obtaining the offset distance between the first image and the second image; fifthly, repeatedly executing the step of providing the first wafer and the second wafer, the step of bonding the first water and the second wafer and the step of obtaining the offset distance between the first image and the second image, and obtaining a plurality of offset distances; sixthly, judging whether the bonding tool is qualified or not according to all the obtained offset distances. By means of the bonding tool detection method, whether the bonding tool is qualified or not can be accurately judged before the bonding tool is applied to the actual bonding technology, and unnecessary product waste is avoided.
Description
Technical field
The present invention relates to microelectronics technology, relate in particular to MEMS bonding technology field.
Background technology
MEMS (micro electro mechanical system) (Microelectro Mechanical Systems, be called for short MEMS) is the research frontier of the multidisciplinary intersection that grows up on microelectric technique basis, is a kind of technology that adopts semiconductor technology to manufacture micro-electro-mechanical device.In MEMS processing technology, bonding techniques is critical process wherein, and the metallic bonding technology in bonding techniques is conventional bonding techniques.Metallic bonding refers to by simple metal or alloy, relies on the effects such as diffusion between metallic bond, metal and MEMS device surface, metal melting that two MEMS devices are bonded together Face to face.
But, use the bonding tool of prior art, carry out metallic bonding technology and the MEMS device that obtains there will be the not good situation of performance.And in the prior art, only have when certain batch of MEMS device out after, by sample survey obtains the qualification rate of this batch products to product, if qualification rate is lower, just must lose this batch products, cause product waste.Therefore, if prior art can not be carried out the detection of the bonding tool in metallic bonding technology before bonding, whether good to determine the overall performance of this bonding tool, be whether bonding tool is qualified, also just cannot judge and use the follow-up metallic bonding technology of this bonding tool whether can obtain the MEMS device that qualification rate is higher.
More introductions about bonding techniques, refer on June 11st, 2008 disclosed, and publication number is CN100517623C, and name is called the Chinese invention patent application of " wafer press welding bonding method and structure thereof ".
Summary of the invention
The problem that the present invention solves is that prior art can not be carried out the whether qualified detection of bonding tool in metallic bonding technology before bonding, also just cannot judge and use the follow-up metallic bonding process of this bonding tool whether can obtain the MEMS device that qualification rate is higher.
For addressing the above problem, the detection method of a kind of new bonding tool of the present invention, comprising:
Provide have the first alignment pattern the first wafer, there is the second wafer of the second alignment pattern, described the first alignment pattern is positioned at the front of described the first wafer, described the second alignment pattern is positioned at the back side of described the second wafer, the position of described the second alignment pattern on the second wafer is corresponding with the position of described the first alignment pattern on the first wafer, when fitted in the back side of the front of the first wafer and the second wafer, described the first alignment pattern embeds the region that described the second alignment pattern surrounds;
Bonding tool is provided, uses bonding techniques that bonding is carried out in the front of the front of described the first wafer and described the second wafer;
By after described the first wafer and the second wafer bonding, the light that use can penetrate the first wafer, the second wafer irradiates the back side of described the second wafer or the back side of described the first wafer, on screen, obtain the first image and the second image, corresponding described the first alignment pattern of described the first image, corresponding described the second alignment pattern of described the second image;
Obtain the offset distance between the first image and the second image;
The step of provide the first wafer and the second wafer, bonding the first wafer and the second wafer described in repetition, obtaining offset distance between the first image and the second image repeatedly, obtains multiple offset distances;
According to the offset distance of all acquisitions, judge that whether described bonding tool is qualified.
Optionally, described light is infrared light.
Optionally, according to the method whether offset distance of described all acquisitions is judged described bonding tool qualified, comprise: the fraction defective obtaining according to the offset distance of described all acquisitions judges that whether bonding tool is qualified.
Optionally, complete after the obtaining an of offset distance, by the first wafer of bonding and the second wafer separate, the first wafer after separation and the second wafer are as the first wafer that repeats to provide and the second wafer.
Optionally, after forming the first alignment pattern and forming the second alignment pattern, before use bonding techniques carries out bonding by the front of the front of described the first wafer and described the second wafer, also comprise: in the front of described the first wafer, form the first silicon nitride layer, in the front of described the second wafer, form the second silicon nitride layer;
By by Fen Li with described the second silicon nitride layer described the first silicon nitride layer after bonding, realize the first wafer of bonding and the second wafer separate.
Optionally, the scope of the thickness of described the first silicon nitride layer and described the second silicon nitride layer is 100～300um.
Optionally, number of times 10-30 time of repeating step.
Optionally, described in repetition, provide the first wafer and the second wafer for new the first wafer and the second wafer is provided again.
Optionally, described the first alignment pattern is ╋ font, and described the second alignment pattern is
font.
Optionally, on described ╋ word, be formed with coordinate system, described coordinate system Yi╋Zi center is the former heart, take two limits of ╋ word as x axle and y axle;
While using described in Infrared irradiation the back side of the second wafer or the back side of described the first wafer, described coordinate system is also imaged on and on described screen, forms coordinate diagram picture;
The method of obtaining the offset distance between the first image and the second image comprises: according to described coordinate diagram picture, obtain between described the first image and the second image at the axial offset distance of y, at the axial offset distance of x;
The offset distance of described all acquisitions comprises the axial offset distance of all y and the axial offset distance of x;
According to the method whether offset distance of described all acquisitions is judged described bonding tool qualified, comprise: the axial fraction defective of y obtaining according to the axial offset distance of described all y, the axial fraction defective of the x obtaining according to the axial offset distance of all x judge that whether bonding tool is qualified.
Optionally, described the first alignment pattern and described the second alignment pattern are patterned photoresist layer.
Optionally, described detection method is for detection of bonding tool in metallic bonding technology.
Compared with prior art, the present invention has the following advantages:
The present invention has the first wafer of the first alignment pattern, second wafer with the second alignment pattern, bonding the first wafer and the second wafer by repeating to provide, use the surface of not carrying out bonding that the light that can penetrate the first wafer and the second wafer irradiates the first wafer or the second wafer with the step of obtaining offset distance between the first image and the second image repeatedly, obtains multiple offset distances; Finally according to the offset distance of all acquisitions, judge that whether bonding tool is qualified.Use detection method of the present invention, can be before bonding tool be applied to real bonding techniques, just determine relatively accurately that whether this bonding tool is qualified, avoid unnecessary product waste.Especially be applied to metallic bonding technology, solved infrared light and cannot pass metal, and cannot, in real technique, by direct Infrared irradiation, determine the problem whether bonding skew and bonding offset distance have occurred in bonding process.
In specific embodiment, by forming the first silicon nitride layer in the first wafer frontside providing, in the second wafer frontside, form the second silicon nitride layer, make the first silicon nitride layer and the second silicon nitride layer bonding.Because the adhesion of the surface in contact between the first silicon nitride layer and the second silicon nitride layer is insecure, therefore complete after the obtaining an of offset distance, can make the first silicon nitride layer Fen Li with the second silicon nitride layer, then reuse the first wafer and the second wafer and carry out bonding, light and irradiate, obtain offset distance and separation step repeatedly, obtain multiple offset distances.In the present embodiment, described the first wafer and the second wafer can be reused, and need to all not use new wafer at each bonding process, have avoided the waste of material; And the first wafer and the second wafer are easily separated, have greatly improved detection efficiency.Secondly, use the detection method of the present embodiment, can carry out the detection of bonding tool every day, to reach the object of Real-Time Monitoring bonding tool overall performance, to determine that whether bonding tool is qualified.Like this, bonding tool overall performance obtains regular monitoring, to guarantee that present stage used this bonding tool to carry out MEMS device bonding and process the quality of the product obtaining and obtain regular monitoring, avoid the MEMS device of higher batch of disqualification rate to come into the market, also the corresponding production efficiency that improved.
In specific embodiment, described the first alignment pattern is used ╋ font, and the second alignment pattern is
font, and Yi╋Zi center is the former heart, take the both sides of ╋ word as x axle and y axle are set up coordinate system.After using light to irradiate, described coordinate system is also imaged on the screen of the first image and the second image, forms coordinate diagram picture, by directly reading the offset distance of the first alignment pattern and the second alignment pattern, has improved detection efficiency.And according to x axle fraction defective or y axle fraction defective, can determine that bonding tool is at specific direction, as problem has appearred in x direction of principal axis or y direction of principal axis, para-linkage instrument is adjusted, is repaired targetedly afterwards, has improved production efficiency.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the detection method of the bonding tool of the specific embodiment of the invention;
Fig. 2 is the cross-sectional view of the first wafer and second wafer of the specific embodiment of the invention;
Fig. 3 is the first alignment pattern vertical view of the specific embodiment of the invention and the vertical view of the second alignment pattern;
Fig. 4 is first image that bonding skew does not occur of the specific embodiment of the invention and the schematic diagram of the second image;
Fig. 5 is first image in the skew of x direction of principal axis generation bonding of the specific embodiment of the invention and the schematic diagram of the second image;
Fig. 6 is first image in the skew of y direction of principal axis generation bonding of the specific embodiment of the invention and the schematic diagram of the second image;
Fig. 7 is the cross-sectional view of the first wafer and second wafer of another enforcement of the present invention.
Embodiment
The MEMS device products defective that inventor obtains for the bonding tool using in metallic bonding technology is studied, and find: in metallic bonding process, while using bonding tool to suppress metal and wafer or metal and metal, can cause metal and metal, or the bonding contact point between metal and wafer is not aimed at completely, be Metal Phase for wafer or wherein a Metal Phase for another piece metal, in bonding process, there is bonding skew, the product obtaining like this can cannot normally work product because of the loose contact of bonding contact point.Further, bonding contact point is easy to rupture, and can cause product to work.Inventor notices, there is the reason of bonding skew, mainly that problem has appearred in bonding tool itself, in bonding tool, make the contacting more closely of metal and metal or metal and wafer, extruder member firmly, size, direction that wafer or metal are exerted pressure are inhomogeneous, cause the contact of bonding contact point insecure, bonding contact point dislocation etc.In the prior art, due to the precise space of bonding tool in a relative closure, whether para-linkage instrument goes wrong, and after can only treating that MEMS device goes wrong, just can judge.If before bonding, whether qualifiedly just can grasp bonding tool, just can determine whether and can continue to use the bonding tool of present stage to carry out reality production, avoid the consequence that occurs that batch products disqualification rate is too high and cause this batch products to abandon.
Meanwhile, inventor also notices, due to metallic bonding utilization metal, and infrared light cannot pass metal, in bonding process, cannot judge whether bonding process skew has occurred by Infrared irradiation; Even as nonmetal bonding techniques, can judge that bonding process is offset by Infrared irradiation, in practical operation, also can not all carry out Infrared irradiation for bonding process each time, this obviously can affect production efficiency.So for above problem, inventor, through creative work, has obtained the detection method of bonding tool of the present invention.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Set forth in the following description a lot of details so that fully understand the present invention, but the present invention can implement to be much different from other modes described here.Based on the embodiment of the present invention, those skilled in the art do not make the every other embodiment obtaining under creative work prerequisite, all belong to the scope of protection of the invention.
Secondly, the present invention utilizes schematic diagram to be described in detail, when the embodiment of the present invention is described in detail in detail; for ease of explanation; the structural representation of indication equipment can be disobeyed general ratio and be done local amplification, and described schematic diagram is example, can not limit the scope of protection of the invention.
With reference to Fig. 2 and Fig. 3, and in conjunction with Fig. 1, execution step S11, the first wafer 10 and the second wafer 20 are provided, wherein, the front of the first wafer 10 is formed with the first alignment pattern 11, the back side of the second wafer 20 is formed with the second alignment pattern 21, the position of the second alignment pattern 21 on the second wafer 20 is corresponding with the position of the first alignment pattern 11 on the first wafer 10, when fitted in the back side of the front of the first wafer 10 and the second wafer 20, the first alignment pattern 11 embeds the region that the second alignment pattern 21 surrounds.
In specific embodiment, described the first wafer 10 and the second wafer 20 are silicon chip, and polishing is all passed through in front.
In specific embodiment, the material of described the first alignment pattern 11 and the second alignment pattern 21 is all selected photoresist.While making with photoresist, at the positive first patterned photoresist layer that forms of described the first wafer 10, at described second wafer 20 back sides, form the photoresist layer of second graphical.In specific embodiment, the region shape that the figure of the figure of described the first patterned photoresist layer and the photoresist layer of second graphical is surrounded is identical, when fitted in the back side of the front of the first wafer 10 and the second wafer 20, the first patterned photoresist layer can embed the region that the photoresist layer of second graphical surrounds just.And photoresist material can allow light to pass, follow-up light irradiate the first wafer 10 or the second wafer 20 do not carry out bonding surperficial time, the photoresist layer of described the first patterned photoresist layer and second graphical is imaged onto in same screen.In specific embodiment, form the method prior art known to those skilled in the art of the photoresist layer of described the first patterned photoresist layer and second graphical, do not repeat them here.In the present embodiment, the material of the first alignment pattern 11 and the second alignment pattern 21 is selected photoresist, but is not limited to photoresist.To other mask material, as long as can realize object of the present invention, be all feasible.
In specific embodiment, with reference to Fig. 3, the first alignment pattern 11 is selected ╋ font, and described the second alignment pattern 21 is selected
font.Wherein, when fitted in the back side of the front of the first wafer 10 and the second wafer 20, the ╋ word of the first alignment pattern 11 can embed the second alignment pattern 21 just
the region 105 that four squares of word surround.
With reference to Fig. 1, execution step S12, provides bonding tool, uses bonding techniques that bonding is carried out in the front of the front of described the first wafer 10 and the second wafer 20.The bonding techniques here mainly refers to metallic bonding technology.Just as mentioned before, because light is difficult to through metal, in reality is produced, cannot irradiate by light the surface of not carrying out bonding of metal or wafer, reach the whether qualified detection of bonding tool in metallic bonding technology.Therefore, the present invention is mainly for the whether qualified detection of the bonding tool in metallic bonding technology.But the present invention is not limited to again metallic bonding technology, to other bonding techniques such as silicon/Si direct bonding, silicon/glass electrostatic bonding technology, whether can use equally the overall performance of technical scheme detection bonding tool of the present invention good, whether bonding tool is qualified.Wherein, the known technologies all known to those skilled in the art such as metallic bonding technology, silicon/Si direct bonding, silicon/glass electrostatic bonding technology, do not repeat them here.
With reference to Fig. 3 and Fig. 4, and in conjunction with Fig. 1, execution step S13, by after the first wafer 10 and the second wafer 20 bondings, the light that use can penetrate the first wafer 10 and the second wafer 20 irradiates the back side of described the second wafer 20 or the back side of the first wafer 10, obtains the first image 11' and the second image 21', wherein on screen, corresponding the second alignment pattern 21 of corresponding the first alignment pattern 11, the second image 21' of the first image 11'.
In specific embodiment, the described light that can penetrate the first wafer 10 and the second wafer 20 can be selected infrared light, but is not limited to infrared light, and the light that can penetrate the first wafer 10 and the second wafer 20 for other is also feasible.
In specific embodiment, described light is irradiating material penetrating after this material, and the light in part wavelength coverage is absorbed, and light in other part wavelength coverages is reflected, and finally forms the spectrogram of the light and dark striped of this material.Even two objects of material of the same race, if the distance difference that same light passes through in each object, final imaging also can the light and dark striped of imaging.In the present embodiment, the material of the first wafer 10 and the second wafer 20 is silicon, and the material of the first alignment pattern 11 and the second alignment pattern 21 can be selected photoresist.Even if the first alignment pattern 11, the second alignment pattern 21 are identical with the material of the second wafer 20 with the first wafer 10, make the first alignment pattern 11 imagings, the second alignment pattern 21 imagings, the distance that light passes through is also different.Utilize spectral principle, use light to irradiate second wafer 20 back sides, the second image 21' is that light passes after the second alignment pattern 21, the second wafer 20, the first wafer 10, the imaging on screen; The first image 11' is that light passes after the second wafer 20, the first alignment pattern 11, the first wafer 10, the imaging on screen.The first image 11 ' with the second image 21', there is shading value difference in other regions on the first image 11', the second image 21' and screen, make the border of the first image 11' and the second image 21', the border in other regions on the first image 11', the second image 21 ' and screen is clear and legible.With reference to Fig. 4, in the first alignment pattern, be ╋ font, described the second alignment pattern 21 is selected
during word, the ╋ word of the first image 11' and the second image 21''s
the border of word is clear and legible, and the first image 11' can embed the region 105 that the second image 21' surrounds.In the present embodiment, the second alignment pattern 21 is selected four squares, can improve the resolution between the second image 21' and the first image 11', can know the border of differentiating the first image 11' and the second image 21', and be convenient to obtain the offset distance between the first image 11' and the second image 21'.
Fig. 4 is the schematic diagram that skew does not occur bonding, but can be offset in actual bond process, and Fig. 4 is for the first image, the second image are described, does not therefore show bonding the situation being offset occurs.
In specific embodiment, with reference to Fig. 4 to Fig. 6, with reference to Fig. 1, execution step S14, obtains the offset distance between the first image 11' and the second image 21', is the offset distance of relative the first wafer 10 of the second wafer 20 in bonding process.With reference to the foregoing, border between the first image 11' and the second image 21' is clear and legible, can know and differentiate the first image 11' and the second image 21', by camera lens, observe and measure the offset distance between the first image 11' and the second image 21' adjacent boundary, be the offset distance of relative the first wafer 10 of the second wafer 20 in bonding process.
In specific embodiment, if the first image 11' is ╋ word, the second image 21' is
word, with reference to Fig. 4,
distance between each square of word limit adjacent with ╋ word is 0, and relative the first wafer of the second wafer is not offset in bonding process; With reference to Fig. 5,
distance between each square of word limit adjacent with ╋ word vertical direction is 0, and distance between the limit adjacent with ╋ crossline direction is not quite similar, can determine that the second image 21', with respect to the first image 11', skew has occurred in bonding process, then by measuring
distance between each square of word limit adjacent with ╋ crossline direction just can be determined offset distance.In fact, in the present embodiment, only need to select one of them square, as the square I in the upper right corner, the distance of measuring between the limit that this square I is adjacent with ╋ word crossline direction is d, and obtaining the first image 11' and the second image 21' is d at the offset distance of crossline direction.In like manner, with reference to Fig. 6, by the distance of measuring between the limit that square I is adjacent with ╋ word vertical direction, be l, obtaining the first image 11' and the second image 21' is l at the offset distance of vertical direction.
In specific embodiment, with reference to Fig. 4 to Fig. 6, can on ╋ word, form coordinate system, described coordinate system Yi╋Zi center is former heart O, take two limits of ╋ word as x axle and y axle (with reference to Fig. 4).At execution step S13(Fig. 1) time, described coordinate system is also imaged on and on screen, forms coordinate diagram picture.Now, just can be directly according to coordinate diagram picture, read the offset distance between the first image 11' and the second image 21', and can determine that offset direction is x direction of principal axis or y direction of principal axis.Finally can, according to the bonding skew of specific direction, at this specific direction, adjust bonding tool targetedly.In the present embodiment, the method for acquisition offset distance is very convenient.
In specific embodiment, with reference to Fig. 4, this coordinate system can just define with the first alignment pattern 11 in advance simultaneously, form simultaneously, as the material when the first alignment pattern 11 is selected photoresist, just can make the mask with the first alignment pattern 11 and this coordinate system simultaneously, after photoetching, just form the first alignment pattern 11 with coordinate system.Wherein,
distance between the word limit adjacent with x axle characterizes by the y coordinate on this limit, and namely the second wafer 20 in bonding process is with respect to the first wafer 10 at the axial offset distance of y, and unit is μ m;
the limit that word is adjacent with y axle characterizes by the x coordinate on this limit to the distance of y axle, and namely the second wafer 20 in bonding process is with respect to the first wafer 10 at the axial offset distance of x, and unit is μ m.For example, take the square I between x axle positive coordinate and y axle positive coordinate as example, the x coordinate on the limit adjacent with y axle be on the occasion of time, represent that the second wafer 20 in bonding process is offset to x axle positive dirction with respect to the first wafer 10; If during negative value, represent that the second wafer 20 in bonding process is offset to x axle negative direction with respect to the first wafer 10.The y coordinate on the limit that square I is adjacent with x axle be on the occasion of time, represent that the second wafer 20 in bonding process is offset to y axle positive dirction with respect to the first wafer 10; If negative value, represents that the second wafer 20 in bonding process is offset to y axle negative direction with respect to the first wafer 10.If the y coordinate on the x coordinate on the limit of the adjacent y axle of this square I and the limit of adjacent x axle is zero, bonding process is not offset.Certainly, in specific embodiment, also can select other certain squares to obtain offset distance as standard, concrete grammar is with reference to aforementioned square.
In specific embodiment, with reference to Fig. 4, ╋ word with
between the imaging of word, have space, the space in figure does not represent that both have occurred bonding skew, here just for the ease of understanding the principle of the present embodiment, be used for differentiating ╋ word with
position relationship between word imaging edge.In specific embodiment, continuation, take square I as example, can pre-define while there is not bonding skew, and the y coordinate on the limit of the x axle that this square distance is adjacent is 0, the x coordinate on the limit of the y axle that distance is adjacent is 0, and then on x axle and y axle, according to certain unit, (for example 1 μ m) marks successively.
In specific embodiment, with reference to Fig. 5, the second image 21'
word covers the first image 11' ╋ word, has formed
the overlapping region 101 and 102 of word and ╋ word, there is bonding skew in bonding process.Wherein, the x coordinate on the limit of the adjacent y axle of square I is 0, and the y coordinate on the limit of the adjacent x axle of square I is d, obtain a coordinate (0, d), show the second wafer 20 with respect to the first wafer 10 to y axle positive dirction generation bonding skew, offset distance is d.Refer again to Fig. 6,
word covers ╋ word, has formed overlapping region 103 and 104, illustrates that bonding skew has occurred bonding process.The y coordinate on the limit of the adjacent x axle of square I is 0, and the x coordinate on the limit of adjacent y axle is l, obtains a coordinate (l, 0), shows that the second wafer 20 to x axle positive dirction, skew has occurred with respect to the first wafer 10, and offset distance is l.Certainly, in specific embodiment, along x direction of principal axis and y direction of principal axis, all there is the phenomenon of skew in more existence, can be with reference to preceding method, obtaining square I is (l, d) at x direction of principal axis and the axial coordinate of y, to obtain square I at x direction of principal axis and the axial offset distance of y, wherein, the positive and negative value representation offset direction of coordinate.
With reference to Fig. 1, execution step S15, repeated execution of steps S11, S12, S14, the step of repeat to provide the first wafer and the second wafer, bonding the first wafer and the second wafer, obtaining the offset distance between the first image and the second image repeatedly, obtains multiple offset distances.
In specific embodiment, describedly repeat to provide the method for the first wafer and the second wafer to comprise: a pair of new wafer is provided again, and execution step S15, obtains multiple offset distances.
In specific embodiment, completing after the obtaining an of offset distance, can also select suitable method, by the first wafer of bonding and the second wafer separate, the first wafer after separation and the second wafer are as the first wafer that repeats to provide and the second wafer.In the present embodiment, by a pair of wafer separate after bonding, and reuse, can realize and obtain multiple offset distances, and conservation.
In other embodiments, describedly repeat to provide the method for the first wafer and the second wafer to comprise: with reference to Fig. 7, after forming the first alignment pattern 31 and forming the second alignment pattern 41, before use bonding techniques carries out bonding by the front of the front of described the first wafer 10' and the second wafer 20', in the front of the first wafer 10', form the first silicon nitride layer 13, in the front of the second wafer 20', form the second silicon nitride layer 23; Perform step afterwards S12(with reference to Fig. 1), by the first silicon nitride layer 13 and the second silicon nitride layer 23 bondings; Then perform step S13(with reference to Fig. 1) use light to irradiate the first wafer 10' back side or the second wafer 20' back side; And then perform step S14(with reference to Fig. 1), obtain an offset distance; Repeated isolation the first silicon nitride layer 13 and the second silicon nitride layer 23, execution step S12, S13 and S14 many times, obtain multiple offset distances.
In specific embodiment, with reference to Fig. 7, use low-pressure chemical vapor deposition (LPCVD) to form the first silicon nitride layer 13 and the second silicon nitride layer 23, the technology that concrete technology is well known to those skilled in the art, does not repeat them here.
In the present embodiment, with reference to Fig. 7, because the adhesive between the first silicon nitride layer 13 and the second silicon nitride layer 23 is poor, the adhesion of described the first silicon nitride layer 13 and the second silicon nitride layer 23 is also insecure, and the bonding between the first silicon nitride layer 13 and the second silicon nitride layer 23 easily separates.Like this, after light irradiate after, with the first wafer 10' of the first silicon nitride layer 13, can be easy to Fen Li with the second wafer 20' with the second silicon nitride layer 23.In the present embodiment, the first wafer 10' and the second wafer 20' can reuse, and do not need each bonding process all to use new wafer, have avoided the waste of material, have also improved detection efficiency simultaneously.
In the present embodiment, the thickness range of described the first silicon nitride layer 13 and the second silicon nitride layer 23 is 100 μ～200 μ m.The a pair of wafer of the present embodiment can be reused 10 to 30 times.
In specific embodiment, in conjunction with detection method embodiment illustrated in fig. 7, with reference to Fig. 4 to Fig. 6, if the first image 11' is ╋ word, and be formed with coordinate diagram picture, the second image 21' is
word, by execution step S15, can obtain one group of coordinate (l
1, d
1), (l
2, d
2), (l
3, d
3) ... (l
n, d
n), i.e. offset distance between corresponding the first image 11' and the second image 21'.In specific embodiment, in the detection method of another embodiment shown in Fig. 7, coordinate coordinate system, can the multiple offset distance coordinates of more convenient gain, and also the enforcement of this detection method is also more efficient, can be used as the preferred embodiments of the present invention.
In specific embodiment, with reference to Fig. 1, execution step S16, judges that according to the offset distance of all acquisitions whether bonding tool is qualified.As utilize statistical method, by all offset distance compilation of statistics processing procedure control (Statistical Process Control is called for short SPC) chart.Statistical process control refers to the state that utilizes the method for statistics to carry out monitor procedure, under the state of deterministic process in control, to reduce the variation of product quality.In the present invention, utilize statistical method to detect overall performance, the state of bonding tool, under the state of the overall performance of bonding tool of determining present stage in control, and under the state of the bonding techniques of further definite this bonding tool of use in control, to reduce the variation of the MEMS device quality of using this bonding tool production.According to statistical process control chart, wherein occurring exceeding can allowed band (the whether good foundation of overall performance of the bonding tool of ratio (being fraction defective) the conduct judgement present stage between the number of times of 0～15 μ offset distance m) and total bonding number of times.If fraction defective in tolerance interval, judges that the bonding tool overall performance of present stage is better; If fraction defective exceedes tolerance interval, judge that the overall performance of bonding tool of present stage is not good, should not continue on for bonding process, and need to place under repair, adjust or change.In conjunction with detection method embodiment illustrated in fig. 7, can implement easily and fast the detection method of bonding tool of the present invention, therefore, the overall performance that can all carry out a bonding tool every day detects, establishment SPC chart, and determine that according to SPC chart whether bonding tool is qualified, and arrange reality to produce.In actual process, can reach the real-time monitoring of para-linkage instrument, to guarantee to use this bonding tool to carry out the product quality that MEMS device bonding obtains, obtain regular monitoring, avoid the MEMS device products of higher batch of disqualification rate to come into the market, and make enterprise suffer economy and credibility loss, the also corresponding production efficiency that improved of while.
In specific embodiment, with reference to Fig. 4 to Fig. 6, if the first image 11' is ╋ word, and be formed with coordinate diagram picture, the second image 21' is
word, by execution step S15, can obtain one group of coordinate (l
1, d
1), (l
2, d
2), (l
3, d
3) ... (l
n, d
n), i.e. offset distance between corresponding the first image 11' and the second image 21'.By a statistical process control chart of this group of coordinate establishment, obtain respectively x axle fraction defective and y axle fraction defective.Described x axle fraction defective refer to the second wafer 20 with respect to the first wafer 10 at the axial offset distance (l of x
1, l
2, l
3l
n) exceed the bonding number of times within the scope of 0～15 μ m, with the ratio of total bonding number of times in chart; Described y axle fraction defective refers to the axial offset distance (d of y
1, d
2, d
3d
n) exceed the bonding number of times within the scope of 0～15 μ m, with the ratio of the total bonding number of times in chart.If x axle fraction defective and y axle fraction defective are all in tolerance interval, show that at the bonding tool in present stage, following measurable stage be qualified, the MEMS device disqualification rate that uses the bonding techniques of this bonding tool to produce is lower, and the each batch of MEMS device end properties in present stage, measurable stage is better.If x axle fraction defective exceeds tolerance interval, or y axle fraction defective exceeds outside tolerance interval, at the bonding tool in present stage, following measurable stage, is underproof, needs timely para-linkage instrument place under repair, adjust or change.In conjunction with detection method embodiment illustrated in fig. 7, can be more convenient, the detection method of Rapid Implementation bonding tool of the present invention.
In specific embodiment, the first alignment pattern and the second alignment pattern are not limited to above shape, for example can be by above-mentioned
word and ╋ word are replaced mutually, with
word is as the first alignment pattern, and
coordinate system is set up in the region that word surrounds, and using ╋ word word as the second alignment pattern, can reach equally technique effect of the present invention.To utilizing principle of the present invention, select the shape of the first alignment pattern and the second alignment pattern, as long as can realize object of the present invention, all within protection scope of the present invention.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible variation and modification to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection domain of technical solution of the present invention.
Claims (12)
1. a detection method for bonding tool, is characterized in that, comprising:
Provide have the first alignment pattern the first wafer, there is the second wafer of the second alignment pattern, described the first alignment pattern is positioned at the front of described the first wafer, described the second alignment pattern is positioned at the back side of described the second wafer, the position of described the second alignment pattern on the second wafer is corresponding with the position of described the first alignment pattern on the first wafer, when fitted in the back side of the front of the first wafer and the second wafer, described the first alignment pattern embeds the region that described the second alignment pattern surrounds;
Bonding tool is provided, uses bonding techniques that bonding is carried out in the front of the front of described the first wafer and described the second wafer;
By after described the first wafer and the second wafer bonding, the light that use can penetrate the first wafer, the second wafer irradiates the back side of described the second wafer or the back side of described the first wafer, on screen, obtain the first image and the second image, corresponding described the first alignment pattern of described the first image, corresponding described the second alignment pattern of described the second image;
Obtain the offset distance between the first image and the second image;
The step of provide the first wafer and the second wafer, bonding the first wafer and the second wafer described in repetition, obtaining offset distance between the first image and the second image repeatedly, obtains multiple offset distances;
According to the offset distance of all acquisitions, judge that whether described bonding tool is qualified.
2. detection method as claimed in claim 1, is characterized in that, described light is infrared light.
3. detection method as claimed in claim 1, it is characterized in that, according to the method whether offset distance of described all acquisitions is judged described bonding tool qualified, comprise: the fraction defective obtaining according to the offset distance of described all acquisitions judges that whether bonding tool is qualified.
4. detection method as claimed in claim 1, is characterized in that, completes after the obtaining an of offset distance, and by the first wafer of bonding and the second wafer separate, the first wafer after separation and the second wafer are as the first wafer that repeats to provide and the second wafer.
5. detection method as claimed in claim 4, it is characterized in that, after forming the first alignment pattern and forming the second alignment pattern, before use bonding techniques carries out bonding by the front of the front of described the first wafer and described the second wafer, also comprise: in the front of described the first wafer, form the first silicon nitride layer, in the front of described the second wafer, form the second silicon nitride layer;
By by Fen Li with described the second silicon nitride layer described the first silicon nitride layer after bonding, realize the first wafer of bonding and the second wafer separate.
6. detection method as claimed in claim 5, is characterized in that, the scope of the thickness of described the first silicon nitride layer and described the second silicon nitride layer is 100～300um.
7. detection method as claimed in claim 5, is characterized in that, the number of times of repeating step 10-30 time.
8. detection method as claimed in claim 1, is characterized in that, provides the first wafer and the second wafer for new the first wafer and the second wafer is provided again described in repetition.
9. detection method as claimed in claim 1, is characterized in that, described the first alignment pattern is ╋ font, and described the second alignment pattern is
font.
10. detection method as claimed in claim 9, is characterized in that, on described ╋ word, is formed with coordinate system, and described coordinate system Yi╋Zi center is the former heart, take two limits of ╋ word as x axle and y axle;
Use light while irradiating the back side of described the second wafer or the back side of described the first wafer, described coordinate system is also imaged on and on described screen, forms coordinate diagram picture;
The method of obtaining the offset distance between the first image and the second image comprises: according to described coordinate diagram picture, obtain between described the first image and the second image at the axial offset distance of y, at the axial offset distance of x;
The offset distance of described all acquisitions comprises the axial offset distance of all y and the axial offset distance of x;
According to the method whether offset distance of described all acquisitions is judged described bonding tool qualified, comprise: the axial fraction defective of y obtaining according to the axial offset distance of described all y, the axial fraction defective of the x obtaining according to the axial offset distance of all x judge that whether bonding tool is qualified.
11. detection methods as claimed in claim 1, is characterized in that, described the first alignment pattern and described the second alignment pattern are patterned photoresist layer.
12. detection methods as claimed in claim 1, is characterized in that, whether described detection method is qualified for detection of bonding tool in metallic bonding technology.
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