CN103717046B - A kind of absorbing material - Google Patents
A kind of absorbing material Download PDFInfo
- Publication number
- CN103717046B CN103717046B CN201210371560.9A CN201210371560A CN103717046B CN 103717046 B CN103717046 B CN 103717046B CN 201210371560 A CN201210371560 A CN 201210371560A CN 103717046 B CN103717046 B CN 103717046B
- Authority
- CN
- China
- Prior art keywords
- branch
- mixed layer
- elementary cell
- capacitance resistance
- resistance mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The present invention discloses a kind of absorbing material, and it includes being arranged at the first capacitance resistance mixed layer and the second capacitance resistance mixed layer in front of target object；The first capacitance resistance mixed layer is made up of multiple first module structures, the first module structure includes first, second, third, fourth elementary cell, and the first elementary cell includes the first branch and from the first branch both ends vertically extending second branch and the 3rd branch upwards.First elementary cell is rotated by 90 ° respectively, 180 °, obtain the second to the 4th elementary cell after 270 °.The second capacitance resistance mixed layer is made up of multiple second unit structures, and the second unit structure is with first module structure difference, and a plurality of 4th branch is placed with equal intervals between the second branch and the 3rd branch of second unit structure.Capacitance resistance mixed layer of the invention by setting special construction, it can reach wideband, the effect of efficient absorption electromagnetic wave.
Description
Technical field
The present invention relates to field of material technology, more particularly to a kind of absorbing material.
Background technology
It is more and more as the various technologies and product of medium using electromagnetic wave with making rapid progress for scientific technological advance, electricity
Influence of the electromagnetic wave radiation to environment also increasingly increases.For example radio wave may interfere to airport environment, cause Aircraft
Class can not normally take off；Mobile phone may interfere with the work of various precise electronic medicine equipments；Even common calculating
Machine, the electromagnetic wave for carrying information can be also radiated, it may be received and reappeared beyond several kilometers, cause national defence, politics, warp
The leakage of Ji, science and technology etc. information.Therefore, electromagnetic pollution is administered, finds a kind of material that can be kept out and weaken electromagenetic wave radiation
Material --- absorbing material, it has also become a big problem of material science.
Absorbing material is a kind of material that can absorb the electromagnetic wave energy for projecting its surface, its including it is military and its
Its aspect is also widely used, such as stealthy machine, contact clothing etc..The primary condition of material electromagnetic wave absorption is：(1) electromagnetic wave
When inciding on material, it can enter material internal to greatest extent, that is, require that material has matching properties；(2) material is entered
Promptly almost all attenuates internal electromagnetism wave energy, i.e. attenuation characteristic.
Existing absorbing material utilizes absorbent properties of each material itself to electromagnetic wave, by the group for designing different materials
Divide and cause mixed material to possess microwave absorbing property, such design of material is complicated and does not have large-scale promotion, while such
The mechanical performance of material is limited to the mechanical performance of material in itself, it is impossible to meets the needs of special occasions.
The content of the invention
The technical problems to be solved by the invention are, for the above-mentioned deficiency of prior art, propose a kind of suction wave frequency section
Absorbing material wider, absorbing property is good.
It is to propose a kind of absorbing material that the present invention, which solves the technical scheme that its technical problem uses, and it includes being arranged at mesh
Mark the first capacitance resistance mixed layer and the second capacitance resistance mixed layer in front of object；The first capacitance resistance mixed layer is by more
Individual first module structure is formed, and the first module structure includes first, second, third, fourth elementary cell, and first is substantially single
Member include the first branch and from the first branch both ends upwards vertically extending second branch and the 3rd branch；It is substantially single by first
Member branches into 90 ° of rotary shaft rotate counterclockwise with second and obtains the second elementary cell, by the second elementary cell with second unit the
Two, which branch into 90 ° of rotary shaft rotate counterclockwise, obtains the 3rd elementary cell, by the 3rd elementary cell with the 3rd elementary cell second
Branch into 90 ° of rotary shaft rotate counterclockwise and obtain the 4th elementary cell；First elementary cell to the 4th elementary cell is combined into
During cellular construction, first the second branch of elementary cell is overlapped with second the first branch of elementary cell, and the second elementary cell second is divided
The first branches of elementary cell of Zhi Yu tri- overlap, and the 3rd the second branch of elementary cell overlaps with the 4th the first branch of elementary cell,
4th the second branch of elementary cell overlaps with first the first branch of elementary cell；The second capacitance resistance mixed layer is by multiple
Two cellular constructions are formed, and the second unit structure is with first module structure difference, and the second of second unit structure
A plurality of 4th branch is placed between branch and the 3rd branch at equal intervals.
Further, the multiple first module structure and second unit structure are combined into the first electric capacity in the following way
Resistance mixed layer and the second capacitance resistance mixed layer：The branch of first elementary cell of first module structure non-contiguously inserts phase
In the gap that 3rd elementary cell contiguous branch of adjacent first module structure is formed, the second elementary cell of first module structure
Branch non-contiguously insert adjacent first module structure the 4th elementary cell contiguous branch formed gap in；Second is single
The branch of first elementary cell of meta structure non-contiguously inserts adjacent point of the 3rd elementary cell of adjacent second unit structure
In the gap that branch is formed, the branch of the second elementary cell of second unit structure non-contiguously inserts adjacent second unit structure
The 4th elementary cell contiguous branch formed gap in.
Further, in the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, positioned at same electric capacity electricity
Hinder that the length of all branches on mixed layer, width and thickness are equal, and the spacing of contiguous branch is equal to branch's width.
Further, all branch's thickness are in the first capacitance resistance mixed layer and the second capacitance resistance mixed layer
0.015 to 0.025 millimeter.
Further, the first capacitance resistance mixed layer and the spacing of the second capacitance resistance mixed layer and the second electric capacity electricity
It is equal with the spacing of target object to hinder mixed layer.
Further, the spacing of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer is 2-3 millimeters.
Further, between the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and the second electric capacity electricity
Hinder between mixed layer and target object filled with air or be vacuum.
Further, the square resistance of the first capacitance resistance mixed layer is 50 to 180 ohm, second electric capacity
The square resistance of resistance mixed layer is 30 to 50 ohm.
Further, the square resistance of the first capacitance resistance mixed layer is 10 to 30 ohm, second electric capacity
The square resistance of resistance mixed layer is 60 to 90 ohm.
Further, three articles the 4th point is placed with equal intervals between the second branch and the 3rd branch of second unit structure
Branch.
Capacitance resistance mixed layer of the invention by setting special construction, it can reach wideband, the effect of efficient absorption electromagnetic wave
Fruit.Absorbing material of the present invention is simple in construction, thinner thickness, is respectively provided with either in high band or in low-frequency range good suction
Ripple performance.
Brief description of the drawings
Fig. 1 is the structural representation of absorbing material of the present invention；
First module structure and its decomposing schematic representation on Fig. 2 the first capacitance resistance mixed layers；
Fig. 3 is the structural representation that first module structural arrangement shown in multiple Fig. 2 forms the first capacitance resistance mixed layer；
Fig. 4 is second unit structural representation on the second capacitance resistance mixed layer；
Fig. 5 is the structural representation that second unit structural arrangement shown in multiple Fig. 4 forms the second capacitance resistance mixed layer；
Fig. 6 is the simulation result schematic diagram of the better embodiment of absorbing material first of the present invention；
Fig. 7 is the simulation result schematic diagram of the better embodiment of absorbing material second of the present invention.
Embodiment
Fig. 1 is refer to, Fig. 1 is the structural representation of absorbing material of the present invention.The present invention before target object by setting
First capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 are so as to realizing wideband, efficient absorption electromagnetic wave effect.
In Fig. 1, target object is represented using sheet metal 300, and during practical application, target object can be all kinds of things with metal surface
Body, such as aircraft, radar etc., when when practical application, target object does not have metal surface, then it can be pasted in target object surface
Attached metal level.
In a preferred embodiment, the spacing of the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 and
Second capacitance resistance mixed layer 200 is equal with the spacing of target object 300.Preferably, the first capacitance resistance mixed layer 100 and
The spacing of two capacitance resistance mixed layers 200 is 2-3 millimeters.First capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer
Air, or vacuum can be filled between 200 and between the second capacitance resistance mixed layer 200 and target object 300.Change the
The spacing of one capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 and/or the second capacitance resistance mixed layer 200 with
The spacing of target object 300 can change the electromagnetic wave frequency range that absorbing material can respond, when spacing is wider, equivalent to suction ripple material
Expect that thickness is thickening, now absorbing material has good wave-absorbing effect to the electromagnetic wave compared with low-frequency range, when spacing is narrower, then inhales
Wave material has good wave-absorbing effect to the electromagnetic wave of higher frequency band.
It refer to Fig. 2, Fig. 3.Fig. 2 is first module structure and its decomposing schematic representation on the first capacitance resistance mixed layer 100,
Fig. 3 is the structural representation that first module structural arrangement shown in multiple Fig. 2 forms the first capacitance resistance mixed layer.In Fig. 2 and Fig. 3
In, the first capacitance resistance mixed layer material of itself has certain resistance value, and in the first capacitance resistance mixed layer, it is adjacent
Branch can be equivalent to electric capacity in the presence of electromagnetic wave, so as to constitute capacitance resistance mixed layer.Change the first capacitance resistance to mix
Its resistance value can be changed by closing the material of layer, changed branch's number of the first capacitance resistance mixed layer and can be changed its equivalent capacity
Value.The setting of first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 meets transmission line theory, passes through adjustment
The square resistance of capacitance resistance mixed layer and equivalent capacity are so as to realizing wideband, efficient wave-absorbing effect.Transmission line theory
Refer to paper：Kazemzadeh and A.Karlsson,Multilayered Wideband Absorbers for
Oblique Angle of Incidence,IEEE Trans.Antennas Propag.,Vol 58,3637-3646,
(2010)。
In Fig. 2, the first capacitance resistance mixed layer first module structure includes first, second, third, fourth elementary cell,
First elementary cell include the first branch 10 and from the both ends of the first branch 10 upwards vertically extending second branch 11 and the 3rd
Branch 12.In first module structure, the length of each bar branch, width and thickness are equal.
With the second branch 11 it is that 90 ° of rotary shaft rotate counterclockwise obtains the second elementary cell by the first elementary cell, by the
Two elementary cells are that 90 ° of rotary shaft rotate counterclockwise obtains the 3rd elementary cell with the branch 11 ' of second unit second, by the 3rd base
This unit is that 90 ° of rotary shaft rotate counterclockwise obtains the 4th elementary cell with the 3rd the second branch 11 " of elementary cell.By the first base
When this unit to the 4th elementary cell is combined into the first capacitance resistance mixed layer cellular construction, first the second branch of elementary cell 11
Overlapped with second the first branch of elementary cell 10 ', second the second branch 11 ' of elementary cell and the 3rd the first branch of elementary cell
10 " overlap, the 3rd the second branch 11 " of elementary cell and the 4th the first branch 10 " of elementary cell ' overlap, the 4th elementary cell the
Two branches 11 " ' overlapped with first the first branch of elementary cell 10.
In Fig. 3, the first module structure shown in multiple Fig. 2 combines in the following way：First base of first module structure
In the gap that the 3rd elementary cell contiguous branch that the branch of this unit non-contiguously inserts adjacent first module structure is formed,
The branch of second elementary cell of first module structure non-contiguously inserts the 4th elementary cell of adjacent first module structure
In the gap that contiguous branch is formed.Preferably, on the first capacitance resistance mixed layer, spacing is equal between adjacent branch, phase
Spacing between adjacent branch is identical with branch width.
Fig. 4 is refer to, Fig. 4 is second unit structural representation on the second capacitance resistance mixed layer.Second unit structure with
The difference of first module structure is：It is placed with equal intervals between the second branch and the 3rd branch of second unit structure
A plurality of 4th branch 13.The length of second unit structure Zhong Ge branches, width and thickness are equal.
In Fig. 5, the second unit structure shown in multiple Fig. 4 combines in the following way：First base of second unit structure
In the gap that the 3rd elementary cell contiguous branch that the branch of this unit non-contiguously inserts adjacent second unit structure is formed,
The branch of second elementary cell of second unit structure non-contiguously inserts the 4th elementary cell of adjacent second unit structure
In the gap that contiguous branch is formed.Preferably, on the second capacitance resistance mixed layer, spacing is equal between adjacent branch, phase
Spacing between adjacent branch is identical with branch width.
Mixed due to changing the first capacitance resistance mixed layer with the spacing of the second capacitance resistance mixed layer and the second capacitance resistance
Close the spacing of layer and target object and change the resistance value energy of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer
Change response effect of the absorbing material of the present invention to electromagnetic wave.Below by two better embodiment explanation present invention to electromagnetism
The assimilation effect of ripple.
In the first better embodiment, the first capacitance resistance mixed layer and the spacing of the second capacitance resistance mixed layer and
The spacing of two capacitance resistance mixed layers and target object is 2 millimeters, and the first capacitance resistance mixed layer mixes with the second capacitance resistance
The thickness of He Cengshangge branches is 0.015 to 0.025 millimeter, and absorbing material gross thickness is only about 4 millimeters；First capacitance resistance
Mixed layer square resistance is 150 to 180 ohm, and the square resistance of the second capacitance resistance mixed layer is 30 to 50 ohm.Herein
Under the conditions of, the simulation result schematic diagram of absorbing material is as shown in Figure 6.As can be seen from Figure 6, absorbing material 15.7 to 42.1GHZ's
Under frequency range, S11 parameter values are below -15dB.
In the second better embodiment, the first capacitance resistance mixed layer and the spacing of the second capacitance resistance mixed layer and
The spacing of two capacitance resistance mixed layers and target object is 3 millimeters, and the first capacitance resistance mixed layer mixes with the second capacitance resistance
The thickness of He Cengshangge branches is 0.015 to 0.025 millimeter, and absorbing material gross thickness is only about 6 millimeters；First capacitance resistance
Mixed layer square resistance is 10-30 ohms, and the square resistance of the second capacitance resistance mixed layer is 60 to 90 ohm.In this condition
Under, the simulation result schematic diagram of absorbing material is as shown in Figure 7.As can be seen from Figure 7, frequency range of the absorbing material 8.6 to 21.9GHZ
Under, S11 parameter values are below -15dB.Compared to the first better embodiment, in this better embodiment, absorbing material absorbs
Electromagnetic wave frequency range it is relatively low, main cause is that its thickness is thicker, while to remain to reach wave-absorbing effect also corresponding under the thickness
Ground have adjusted the square resistance of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer.
It is envisioned that ground, to adapt to the electromagnetic wave of different frequency range, widens the application of absorbing material, can correspondingly adjust
The gap and/or the first capacitance resistance mixed layer and the second electric capacity of first capacitance resistance mixed layer and the second capacitance resistance mixed layer
The square resistance of resistance mixed layer.
Embodiments of the invention are described above in conjunction with accompanying drawing, but the invention is not limited in above-mentioned specific
Embodiment, above-mentioned embodiment is only schematical, rather than restricted, one of ordinary skill in the art
Under the enlightenment of the present invention, in the case of present inventive concept and scope of the claimed protection is not departed from, it can also make a lot
Form, these are belonged within the protection of the present invention.
Claims (10)
- A kind of 1. absorbing material, it is characterised in that：Including the first capacitance resistance mixed layer being arranged in front of target object and Two capacitance resistance mixed layers；The first capacitance resistance mixed layer is made up of multiple first module structures, the first module knot Structure includes first, second, third, fourth elementary cell, and the first elementary cell includes the first branch and from the first branch both ends Upward vertically extending second branch and the 3rd branch；First elementary cell is branched into rotary shaft rotate counterclockwise with second 90 ° obtain the second elementary cell, and second elementary cell is branched into 90 ° of rotary shaft rotate counterclockwise with second unit second obtains 3rd elementary cell, the 3rd elementary cell is branched into 90 ° of rotary shaft rotate counterclockwise with the 3rd elementary cell second and obtains Four elementary cells；During by the first elementary cell to the 4th elementary unit groups synthesis unit structure, first the second branch of elementary cell Being overlapped with second the first branch of elementary cell, second the second branch of elementary cell overlaps with the 3rd the first branch of elementary cell, the Three the second branches of elementary cell overlap with the 4th the first branch of elementary cell, the 4th the second branch of elementary cell and first substantially single First first branch overlaps；The second capacitance resistance mixed layer is made up of multiple second unit structures, the second unit structure It is with first module structure difference, is placed with equal intervals between the second branch and the 3rd branch of second unit structure A plurality of 4th branch.
- 2. absorbing material as claimed in claim 1, it is characterised in that：The multiple first module structure and second unit structure The first capacitance resistance mixed layer and the second capacitance resistance mixed layer are combined into the following way：First base of first module structure In the gap that the 3rd elementary cell contiguous branch that the branch of this unit non-contiguously inserts adjacent first module structure is formed, The branch of second elementary cell of first module structure non-contiguously inserts the 4th elementary cell of adjacent first module structure In the gap that contiguous branch is formed；It is single that the branch of first elementary cell of second unit structure non-contiguously inserts adjacent second In the gap that 3rd elementary cell contiguous branch of meta structure is formed, the branch of the second elementary cell of second unit structure does not connect In the gap that 4th elementary cell contiguous branch of the adjacent second unit structure of insertion of contacting to earth is formed.
- 3. absorbing material as claimed in claim 2, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity Hinder in mixed layer, length, width and the thickness of all branches on same capacitance resistance mixed layer are equal, contiguous branch Spacing be equal to branch's width.
- 4. absorbing material as claimed in claim 3, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity It is 0.015 to 0.025 millimeter to hinder all branch's thickness in mixed layer.
- 5. absorbing material as claimed in claim 1, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity Spacing and the second capacitance resistance mixed layer for hindering mixed layer are equal with the spacing of target object.
- 6. absorbing material as claimed in claim 5, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity The spacing for hindering mixed layer is 2-3 millimeters.
- 7. absorbing material as claimed in claim 5, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity Filled with air or it is vacuum between resistance mixed layer and between the second capacitance resistance mixed layer and target object.
- 8. absorbing material as claimed in claim 5, it is characterised in that：The square resistance of the first capacitance resistance mixed layer For 150 to 180 ohm, the square resistance of the second capacitance resistance mixed layer is 30 to 50 ohm.
- 9. absorbing material as claimed in claim 5, it is characterised in that：The square resistance of the first capacitance resistance mixed layer For 10 to 30 ohm, the square resistance of the second capacitance resistance mixed layer is 60 to 90 ohm.
- 10. absorbing material as claimed in claim 1, it is characterised in that：The second branch and the 3rd branch of second unit structure Between be placed with three article of the 4th branch at equal intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210371560.9A CN103717046B (en) | 2012-09-29 | 2012-09-29 | A kind of absorbing material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210371560.9A CN103717046B (en) | 2012-09-29 | 2012-09-29 | A kind of absorbing material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103717046A CN103717046A (en) | 2014-04-09 |
| CN103717046B true CN103717046B (en) | 2017-12-22 |
Family
ID=50409464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210371560.9A Active CN103717046B (en) | 2012-09-29 | 2012-09-29 | A kind of absorbing material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103717046B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021120531A1 (en) * | 2019-12-20 | 2021-06-24 | 深圳光启尖端技术有限责任公司 | Wave-absorbing metamaterial, wave-absorbing structural member, and mobile carrier |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001032231A (en) * | 1999-07-23 | 2001-02-06 | Soken Kogyo Kk | Lattice type installation material, wave absorbing structure using it, hume pipe used for the structure, and construction method of wave absorbing structure |
| CN101320835A (en) * | 2008-07-17 | 2008-12-10 | 上海联能科技有限公司 | Novel barron structure of four arm helical antenna |
| CN102480017A (en) * | 2011-06-01 | 2012-05-30 | 深圳光启高等理工研究院 | Metamaterial prepared on basis of CMOS (complementary metal oxide semiconductor) process |
| KR20120068571A (en) * | 2010-12-17 | 2012-06-27 | 한국전자통신연구원 | Broadband metamaterial and control method of broadband metamaterial with controllable effective constitutive |
| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
-
2012
- 2012-09-29 CN CN201210371560.9A patent/CN103717046B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001032231A (en) * | 1999-07-23 | 2001-02-06 | Soken Kogyo Kk | Lattice type installation material, wave absorbing structure using it, hume pipe used for the structure, and construction method of wave absorbing structure |
| CN101320835A (en) * | 2008-07-17 | 2008-12-10 | 上海联能科技有限公司 | Novel barron structure of four arm helical antenna |
| KR20120068571A (en) * | 2010-12-17 | 2012-06-27 | 한국전자통신연구원 | Broadband metamaterial and control method of broadband metamaterial with controllable effective constitutive |
| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
| CN102480017A (en) * | 2011-06-01 | 2012-05-30 | 深圳光启高等理工研究院 | Metamaterial prepared on basis of CMOS (complementary metal oxide semiconductor) process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103717046A (en) | 2014-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9362627B2 (en) | Artificial microstructure and artificial electromagnetic material using the same | |
| CN105655721A (en) | Double-waveband composite broadband wave absorbing material based on frequency selective surface | |
| CN110190407B (en) | Broadband wave absorber based on resistive film and broadband wave absorber array | |
| CN107240778A (en) | Metamaterial antenna cover | |
| CN102811596B (en) | Broadband wave-absorbing metamaterial and wave-absorbing device | |
| CN105576383B (en) | A kind of ultra-thin bilateral inhales wave frequency and selects Meta Materials and its antenna house and antenna system | |
| CN102769209B (en) | Broadband wave absorbing material based on frequency selective surface | |
| CN102724856A (en) | Multi-layer electromagnetic wave absorbing structure and preparation method thereof | |
| CN102811594B (en) | A kind of broadband absorbing Meta Materials and suction wave apparatus | |
| CN103490169B (en) | Individual layer broadband random surface | |
| CN110034407B (en) | Wave-transparent/stealth integrated metamaterial structure | |
| CN107579352A (en) | A kind of ultra wide band frequency suitable for antenna house selects surface | |
| CN103913788A (en) | Mid-infrared band broadband periodic wave-absorbing material | |
| CN102811595B (en) | Broadband wave-absorbing material | |
| CN107342462A (en) | Array antenna with Stealth | |
| CN103717049B (en) | A kind of absorbing material | |
| CN116826390A (en) | Ultra-wideband large-angle-domain metamaterial wave absorber | |
| CN204793218U (en) | Inhale super material of ripples | |
| CN102800991A (en) | Wideband absorbing meta-material | |
| CN103717046B (en) | A kind of absorbing material | |
| CN103717045B (en) | A kind of absorbing material | |
| CN103717044B (en) | A kind of absorbing material | |
| CN103717047B (en) | A kind of absorbing material | |
| CN204793219U (en) | Inhale super material of ripples | |
| CN102760968A (en) | Wideband wave absorbing metamaterial |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210419 Address after: 518057 2 / F, software building, No.9, Gaoxin Middle Road, Nanshan District, Shenzhen, Guangdong Province Patentee after: KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY Address before: 518034. A, 18B, CIC international business center, 1061 Mei Xiang Road, Shenzhen, Guangdong, Futian District Patentee before: KUANG-CHI INNOVATIVE TECHNOLOGY Ltd. |
|
| TR01 | Transfer of patent right |