CN103717047B - A kind of absorbing material - Google Patents
A kind of absorbing material Download PDFInfo
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- CN103717047B CN103717047B CN201210374588.8A CN201210374588A CN103717047B CN 103717047 B CN103717047 B CN 103717047B CN 201210374588 A CN201210374588 A CN 201210374588A CN 103717047 B CN103717047 B CN 103717047B
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Abstract
The present invention discloses a kind of absorbing material, and it includes being arranged at the first capacitance resistance mixed layer and the second capacitance resistance mixed layer in front of target object；The first capacitance resistance mixed layer is made up of multiple first module structures, the first module structure includes first, second, third, fourth elementary cell, first elementary cell includes the first branch and from the first branch both ends upward vertically extending second branch and the 3rd branch, and a plurality of 4th branch that number is more than one article is equidistantly placed between second branch and the 3rd branch.First elementary cell is rotated by 90 ° respectively, 180 °, obtain the second to the 4th elementary cell after 270 °.The second capacitance resistance mixed layer is made up of multiple second unit structures, and the second unit structure is with first module structure difference, and one article of the 4th branch is placed with equal intervals between the second branch and the 3rd branch of second unit structure.Capacitance resistance mixed layer of the invention by setting special construction, it can reach wideband, the effect of efficient absorption electromagnetic wave.
Description
Technical field
The present invention relates to field of material technology, more particularly to a kind of absorbing material.
Background technology
It is more and more as the various technologies and product of medium using electromagnetic wave with making rapid progress for scientific technological advance, electricity
Influence of the electromagnetic wave radiation to environment also increasingly increases.For example radio wave may interfere to airport environment, cause Aircraft
Class can not normally take off；Mobile phone may interfere with the work of various precise electronic medicine equipments；Even common calculating
Machine, the electromagnetic wave for carrying information can be also radiated, it may be received and reappeared beyond several kilometers, cause national defence, politics, warp
The leakage of Ji, science and technology etc. information.Therefore, electromagnetic pollution is administered, finds a kind of material that can be kept out and weaken electromagenetic wave radiation
Material --- absorbing material, it has also become a big problem of material science.
Absorbing material is a kind of material that can absorb the electromagnetic wave energy for projecting its surface, its including it is military and its
Its aspect is also widely used, such as stealthy machine, contact clothing etc..The primary condition of material electromagnetic wave absorption is：(1) electromagnetic wave
When inciding on material, it can enter material internal to greatest extent, that is, require that material has matching properties；(2) material is entered
Promptly almost all attenuates internal electromagnetism wave energy, i.e. attenuation characteristic.
Existing absorbing material utilizes absorbent properties of each material itself to electromagnetic wave, by the group for designing different materials
Divide and cause mixed material to possess microwave absorbing property, such design of material is complicated and does not have large-scale promotion, while such
The mechanical performance of material is limited to the mechanical performance of material in itself, it is impossible to meets the needs of special occasions.
The content of the invention
The technical problems to be solved by the invention are, for the above-mentioned deficiency of prior art, propose a kind of suction wave frequency section
Absorbing material wider, absorbing property is good.
It is to propose a kind of absorbing material that the present invention, which solves the technical scheme that its technical problem uses, and it includes being arranged at mesh
Mark the first capacitance resistance mixed layer and the second capacitance resistance mixed layer in front of object；The first capacitance resistance mixed layer is by more
Individual first module structure is formed, and the first module structure includes first, second, third, fourth elementary cell, and first is substantially single
Member include the first branch and from the first branch both ends upwards vertically extending second branch and the 3rd branch, second branch
And the 3rd be equidistantly placed with a plurality of 4th branch that number is more than one article between branch；By the first elementary cell with the second branch
For rotary shaft rotate counterclockwise, 90 ° obtain the second elementary cell, and second elementary cell is branched into rotation with second unit second
90 ° of axle rotate counterclockwise obtains the 3rd elementary cell, and the 3rd elementary cell is branched into rotary shaft with the 3rd elementary cell second
90 ° of rotate counterclockwise obtains the 4th elementary cell；During by the first elementary cell to the 4th elementary unit groups synthesis unit structure, the
One the second branch of elementary cell overlaps with second the first branch of elementary cell, second the second branch of elementary cell and the 3rd substantially single
First first branch overlaps, and the 3rd the second branch of elementary cell overlaps with the 4th the first branch of elementary cell, the 4th elementary cell the
Two branches overlap with first the first branch of elementary cell；The second capacitance resistance mixed layer is by multiple second unit structure structures
Into the second unit structure is with first module structure difference, the second branch of second unit structure and the 3rd point
One article of the 4th branch is placed with equal intervals between branch.
Further, the multiple first module structure and second unit structure are combined into the first electric capacity in the following way
Resistance mixed layer and the second capacitance resistance mixed layer：The branch of first elementary cell of first module structure non-contiguously inserts phase
In the gap that 3rd elementary cell contiguous branch of adjacent first module structure is formed, the second elementary cell of first module structure
Branch non-contiguously insert adjacent first module structure the 4th elementary cell contiguous branch formed gap in；Second is single
The branch of first elementary cell of meta structure non-contiguously inserts adjacent point of the 3rd elementary cell of adjacent second unit structure
In the gap that branch is formed, the branch of the second elementary cell of second unit structure non-contiguously inserts adjacent second unit structure
The 4th elementary cell contiguous branch formed gap in.
Further, in the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, positioned at same electric capacity electricity
Hinder that the length of all branches on mixed layer, width and thickness are equal, and the spacing of contiguous branch is equal to branch's width.
Further, all branch's thickness are in the first capacitance resistance mixed layer and the second capacitance resistance mixed layer
0.015 to 0.025 millimeter.
Further, the first capacitance resistance mixed layer and the spacing of the second capacitance resistance mixed layer and the second electric capacity electricity
It is equal with the spacing of target object to hinder mixed layer.
Further, the spacing of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer is 2-4 millimeters.
Further, between the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and the second electric capacity electricity
Hinder between mixed layer and target object filled with air or be vacuum.
Further, the square resistance of the first capacitance resistance mixed layer is 150 to 160 ohm, second electricity
The square resistance for holding resistance mixed layer is 20 to 30 ohm.
Further, on the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, the width of all branches
It is 0.1 millimeter.
Further, six articles the 4th point is placed with equal intervals between the second branch and the 3rd branch of second unit structure
Branch.
Capacitance resistance mixed layer of the invention by setting special construction, it can reach wideband, the effect of efficient absorption electromagnetic wave
Fruit.Absorbing material of the present invention is simple in construction, thinner thickness, has good wave-absorbing effect in 7.6GHZ to 33.4GHZ frequency ranges.
Brief description of the drawings
Fig. 1 is the structural representation of absorbing material of the present invention；
First module structure and its decomposing schematic representation on Fig. 2 the first capacitance resistance mixed layers；
Fig. 3 is the structural representation that first module structural arrangement shown in multiple Fig. 2 forms the first capacitance resistance mixed layer；
Fig. 4 is second unit structural representation on the second capacitance resistance mixed layer；
Fig. 5 is the structural representation that second unit structural arrangement shown in multiple Fig. 4 forms the second capacitance resistance mixed layer；
Fig. 6 is the simulation result schematic diagram of absorbing material of the present invention.
Embodiment
Fig. 1 is refer to, Fig. 1 is the structural representation of absorbing material of the present invention.The present invention before target object by setting
First capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 are so as to realizing wideband, efficient absorption electromagnetic wave effect.
In Fig. 1, target object is represented using sheet metal 300, and during practical application, target object can be all kinds of things with metal surface
Body, such as aircraft, radar etc., when when practical application, target object does not have metal surface, then it can be pasted in target object surface
Attached metal level.
In a preferred embodiment, the spacing of the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 and
Second capacitance resistance mixed layer 200 is equal with the spacing of target object 300.Preferably, the first capacitance resistance mixed layer 100 and
The spacing of two capacitance resistance mixed layers 200 is 2-4 millimeters.First capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer
Air, or vacuum can be filled between 200 and between the second capacitance resistance mixed layer 200 and target object 300.Change the
The spacing of one capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 and/or the second capacitance resistance mixed layer 200 with
The spacing of target object 300 can change the electromagnetic wave frequency range that absorbing material can respond, when spacing is wider, equivalent to suction ripple material
Expect that thickness is thickening, now absorbing material has good wave-absorbing effect to the electromagnetic wave compared with low-frequency range, when spacing is narrower, then inhales
Wave material has good wave-absorbing effect to the electromagnetic wave of higher frequency band.
It refer to Fig. 2, Fig. 3.Fig. 2 is first module structure and its decomposing schematic representation on the first capacitance resistance mixed layer 100,
Fig. 3 is the structural representation that first module structural arrangement shown in multiple Fig. 2 forms the first capacitance resistance mixed layer.In Fig. 2 and Fig. 3
In, the first capacitance resistance mixed layer material of itself has certain resistance value, and in the first capacitance resistance mixed layer, it is adjacent
Branch can be equivalent to electric capacity in the presence of electromagnetic wave, so as to constitute capacitance resistance mixed layer.Change the first capacitance resistance to mix
Its resistance value can be changed by closing the material of layer, changed branch's number of the first capacitance resistance mixed layer and can be changed its equivalent capacity
Value.The setting of first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 meets transmission line theory, passes through adjustment
The square resistance of capacitance resistance mixed layer and equivalent capacity are so as to realizing wideband, efficient wave-absorbing effect.Transmission line theory
Refer to paper：Kazemzadeh and A.Karlsson,Multilayered Wideband Absorbers for
Oblique Angle of Incidence,IEEE Trans.Antennas Propag.,Vol 58,3637-3646,
(2010)。
In Fig. 2, the first capacitance resistance mixed layer first module structure includes first, second, third, fourth elementary cell,
First elementary cell include the first branch 10 and from the both ends of the first branch 10 upwards vertically extending second branch 11 and the 3rd
Branch 12, a plurality of 4th branch 13 that number is more than one is placed between the second branch 11 and the 3rd branch 12 at equal intervals.The
In one cellular construction, the length of each bar branch, width and thickness are equal, and the thickness of wherein branch is preferably 0.015 to 0.025
Millimeter.
With the second branch 11 it is that 90 ° of rotary shaft rotate counterclockwise obtains the second elementary cell by the first elementary cell, by the
Two elementary cells are that 90 ° of rotary shaft rotate counterclockwise obtains the 3rd elementary cell with the branch 11 ' of second unit second, by the 3rd base
This unit is that 90 ° of rotary shaft rotate counterclockwise obtains the 4th elementary cell with the 3rd the second branch 11 " of elementary cell.By the first base
When this unit to the 4th elementary cell is combined into the first capacitance resistance mixed layer cellular construction, first the second branch of elementary cell 11
Overlapped with second the first branch of elementary cell 10 ', second the second branch 11 ' of elementary cell and the 3rd the first branch of elementary cell
10 " overlap, the 3rd the second branch 11 " of elementary cell and the 4th the first branch 10 " of elementary cell ' overlap, the 4th elementary cell the
Two branches 11 " ' overlapped with first the first branch of elementary cell 10.
In Fig. 3, the first module structure shown in multiple Fig. 2 combines in the following way：First base of first module structure
In the gap that the 3rd elementary cell contiguous branch that the branch of this unit non-contiguously inserts adjacent first module structure is formed,
The branch of second elementary cell of first module structure non-contiguously inserts the 4th elementary cell of adjacent first module structure
In the gap that contiguous branch is formed.Preferably, on the first capacitance resistance mixed layer, spacing is equal between adjacent branch, phase
Spacing between adjacent branch is identical with branch width.In the present embodiment, each branch's width of first module structure is preferably 0.1
Millimeter.
Fig. 4 is refer to, Fig. 4 is second unit structural representation on the second capacitance resistance mixed layer.Second unit structure with
The difference of first module structure is：It is placed with equal intervals between the second branch and the 3rd branch of second unit structure
One article of the 4th branch.The length of each branch of second unit structure, width and thickness are equal, and the thickness of wherein branch is preferably
0.015 to 0.025 millimeter.
In Fig. 5, the second unit structure shown in multiple Fig. 4 combines in the following way：First base of second unit structure
In the gap that the 3rd elementary cell contiguous branch that the branch of this unit non-contiguously inserts adjacent second unit structure is formed,
The branch of second elementary cell of second unit structure non-contiguously inserts the 4th elementary cell of adjacent second unit structure
In the gap that contiguous branch is formed.Preferably, on the second capacitance resistance mixed layer, spacing is equal between adjacent branch, phase
Spacing between adjacent branch is identical with branch width.In the present embodiment, each branch's width of first module structure is preferably 0.1
Millimeter.
Mixed due to changing the first capacitance resistance mixed layer with the spacing of the second capacitance resistance mixed layer and the second capacitance resistance
Close the spacing of layer and target object and change the resistance value energy of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer
Change response effect of the absorbing material of the present invention to electromagnetic wave.When the first capacitance resistance mixed layer and the second capacitance resistance mixed layer
Spacing and the spacing of the second capacitance resistance mixed layer and target object be 1-3 millimeters, preferably 2 millimeters；First electric capacity electricity
The square resistance for hindering mixed layer is preferably 150 to 160 ohm, and the square resistance of the second capacitance resistance mixed layer is preferably 20
During to 30 ohm, the wave-absorbing effect of absorbing material of the present invention is emulated using CST simulation softwares, its simulation result figure as shown in fig. 6,
It will be appreciated from fig. 6 that in 7.6GHZ to 33.4GHZ frequency ranges, the S11 parameters of absorbing material of the present invention are below -15dB, have good
Broadband absorbing effect.
The suction wave frequency section that absorbing material of the present invention is responded is not limited to above-mentioned 7.6GHZ to 33.4GHZ, in order to more
Low frequency range response electromagnetic wave, can pass through the spacing of the first capacitance resistance mixed layer of increase and the second capacitance resistance mixed layer
And/or second capacitance resistance layer and target object spacing；, can be by reducing the in order to respond electromagnetic wave in higher frequency range
Between the spacing and/or the second capacitance resistance layer and target object of one capacitance resistance mixed layer and the second capacitance resistance mixed layer
Away from.
Embodiments of the invention are described above in conjunction with accompanying drawing, but the invention is not limited in above-mentioned specific
Embodiment, above-mentioned embodiment is only schematical, rather than restricted, one of ordinary skill in the art
Under the enlightenment of the present invention, in the case of present inventive concept and scope of the claimed protection is not departed from, it can also make a lot
Form, these are belonged within the protection of the present invention.
Claims (10)
- A kind of 1. absorbing material, it is characterised in that：Including the first capacitance resistance mixed layer being arranged in front of target object and Two capacitance resistance mixed layers；The first capacitance resistance mixed layer is made up of multiple first module structures, the first module knot Structure includes first, second, third, fourth elementary cell, and the first elementary cell includes the first branch and from the first branch both ends Upward vertically extending second branch and the 3rd branch, it is big to be equidistantly placed with number between second branch and the 3rd branch In one article of a plurality of 4th branch；First elementary cell is branched into 90 ° of rotary shaft rotate counterclockwise with second and obtains the second base This unit, the second elementary cell is branched into 90 ° of rotary shaft rotate counterclockwise with second unit second and obtains the 3rd elementary cell, 3rd elementary cell is branched into 90 ° of rotary shaft rotate counterclockwise with the 3rd elementary cell second and obtains the 4th elementary cell；Will During the first elementary cell to the 4th elementary unit groups synthesis unit structure, first the second branch of elementary cell and the second elementary cell First branch overlaps, and second the second branch of elementary cell overlaps with the 3rd the first branch of elementary cell, the 3rd elementary cell second Branch overlaps with the 4th the first branch of elementary cell, the 4th the second branch of elementary cell and first the first branch of elementary cell weight Close；The second capacitance resistance mixed layer is made up of multiple second unit structures, the second unit structure and first module knot Structure difference is, one article the 4th point is placed with equal intervals between the second branch and the 3rd branch of second unit structure Branch.
- 2. absorbing material as claimed in claim 1, it is characterised in that：The multiple first module structure and second unit structure The first capacitance resistance mixed layer and the second capacitance resistance mixed layer are combined into the following way：First base of first module structure In the gap that the 3rd elementary cell contiguous branch that the branch of this unit non-contiguously inserts adjacent first module structure is formed, The branch of second elementary cell of first module structure non-contiguously inserts the 4th elementary cell of adjacent first module structure In the gap that contiguous branch is formed；It is single that the branch of first elementary cell of second unit structure non-contiguously inserts adjacent second In the gap that 3rd elementary cell contiguous branch of meta structure is formed, the branch of the second elementary cell of second unit structure does not connect In the gap that 4th elementary cell contiguous branch of the adjacent second unit structure of insertion of contacting to earth is formed.
- 3. absorbing material as claimed in claim 2, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity Hinder in mixed layer, length, width and the thickness of all branches on same capacitance resistance mixed layer are equal, contiguous branch Spacing be equal to branch's width.
- 4. absorbing material as claimed in claim 3, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity It is 0.015 to 0.025 millimeter to hinder all branch's thickness in mixed layer.
- 5. absorbing material as claimed in claim 1, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity Spacing and the second capacitance resistance mixed layer for hindering mixed layer are equal with the spacing of target object.
- 6. absorbing material as claimed in claim 5, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity The spacing for hindering mixed layer is 2-4 millimeters.
- 7. absorbing material as claimed in claim 5, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity Filled with air or it is vacuum between resistance mixed layer and between the second capacitance resistance mixed layer and target object.
- 8. absorbing material as claimed in claim 5, it is characterised in that：The square resistance of the first capacitance resistance mixed layer For 150 to 160 ohm, the square resistance of the second capacitance resistance mixed layer is 20 to 30 ohm.
- 9. absorbing material as claimed in claim 3, it is characterised in that：First capacitance resistance mixed layer and the second electric capacity electricity Hinder on mixed layer, the width of all branches is 0.1 millimeter.
- 10. absorbing material as claimed in claim 1, it is characterised in that：The second branch and the 3rd branch of first module structure Between be placed with six article of the 4th branch at equal intervals.
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| CN201210374588.8A CN103717047B (en) | 2012-09-29 | 2012-09-29 | A kind of absorbing material |
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| JP2001032231A (en) * | 1999-07-23 | 2001-02-06 | Soken Kogyo Kk | Lattice type installation material, wave absorbing structure using it, hume pipe used for the structure, and construction method of wave absorbing structure |
| CN101320835A (en) * | 2008-07-17 | 2008-12-10 | 上海联能科技有限公司 | Novel barron structure of four arm helical antenna |
| CN102480017A (en) * | 2011-06-01 | 2012-05-30 | 深圳光启高等理工研究院 | Metamaterial prepared on basis of CMOS (complementary metal oxide semiconductor) process |
| KR20120068571A (en) * | 2010-12-17 | 2012-06-27 | 한국전자통신연구원 | Broadband metamaterial and control method of broadband metamaterial with controllable effective constitutive |
| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
-
2012
- 2012-09-29 CN CN201210374588.8A patent/CN103717047B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001032231A (en) * | 1999-07-23 | 2001-02-06 | Soken Kogyo Kk | Lattice type installation material, wave absorbing structure using it, hume pipe used for the structure, and construction method of wave absorbing structure |
| CN101320835A (en) * | 2008-07-17 | 2008-12-10 | 上海联能科技有限公司 | Novel barron structure of four arm helical antenna |
| KR20120068571A (en) * | 2010-12-17 | 2012-06-27 | 한국전자통신연구원 | Broadband metamaterial and control method of broadband metamaterial with controllable effective constitutive |
| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
| CN102480017A (en) * | 2011-06-01 | 2012-05-30 | 深圳光启高等理工研究院 | Metamaterial prepared on basis of CMOS (complementary metal oxide semiconductor) process |
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Effective date of registration: 20210419 Address after: 518057 2 / F, software building, No.9, Gaoxin Middle Road, Nanshan District, Shenzhen, Guangdong Province Patentee after: KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY Address before: 518034. A, 18B, CIC international business center, 1061 Mei Xiang Road, Shenzhen, Guangdong, Futian District Patentee before: KUANG-CHI INNOVATIVE TECHNOLOGY Ltd. |