CN103717046A - Wave absorbing material - Google Patents
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- CN103717046A CN103717046A CN201210371560.9A CN201210371560A CN103717046A CN 103717046 A CN103717046 A CN 103717046A CN 201210371560 A CN201210371560 A CN 201210371560A CN 103717046 A CN103717046 A CN 103717046A
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Abstract
The invention discloses a wave absorbing material which comprises first and second capacitor and resistor hybrid layers which are arranged in front of a target object. The first capacitor and resistor hybrid layer is composed of a number of first unit structures. Each first unit structure comprises first, second, third and fourth basic units. The first basic unit comprises a first branch, a second branch and a third branch, wherein the second branch and the third branch vertically extend upward from both ends of the first branch. The first basic unit is respectively rotated by the degrees of 90, 180 and 270 to acquire second, third and fourth basic units. The second capacitor and resistor hybrid layer is composed of a number of second unit structures. The second unit structure and the first unit structure differ in that a number of fourth branches are arranged with equal spacing between a second branch and a third branch of the second unit structure. According to the invention, by arranging the capacitor and resistor hybrid layers of special structure, the effect of broadband and efficient electromagnetic wave absorbing can be realized.
Description
Technical field
The present invention relates to material technology field, relate in particular to a kind of absorbing material.
Background technology
Along with making rapid progress of scientific technological advance, the various technology that the electromagnetic wave of take is medium and product are more and more, and electromagenetic wave radiation also increases day by day on the impact of environment.Such as, radio wave may cause interference to airport environment, causes airplane flight normally to take off; Mobile phone may disturb the work of various precise electronic medicine equipments; Even common computer, electromagnetic wave that also can radiation carry information, it is may be beyond several kilometers received and reappear, and cause the leakage of the aspect information such as national defence, politics, economy, science and technology.Therefore, administer electromagnetic pollution, find a kind of material---the absorbing material that can keep out and weaken electromagenetic wave radiation, become a large problem of material science.
Absorbing material is a class material that can absorb the electromagnetic wave energy that projects its surface, and it is comprising that military affairs and other side are also widely used, such as stealthy machine, contact clothing etc.The primary condition of material electromagnetic wave absorption is: when (1) electromagnetic wave incides on material, it can enter material internal to greatest extent, requires material to have matching properties; (2) the electromagnetism wave energy that enters material internal promptly almost all attenuates, i.e. attenuation characteristic.
Existing absorbing material utilizes each material self to electromagnetic absorbent properties, component by design different materials makes mixed material possess microwave absorbing property, this type of design of material is complicated and do not have a large-scale promotion, the mechanical performance of this type of material is limited to the mechanical performance of material itself simultaneously, can not meet the demand of special occasions.
Summary of the invention
Technical problem to be solved by this invention is, for the above-mentioned deficiency of prior art, proposes a kind of absorbing material that ripple frequency range is wider, absorbing property is good of inhaling.
The present invention solves the technical scheme that its technical problem adopts, and proposes a kind of absorbing material, and it comprises the first capacitance resistance mixed layer and the second capacitance resistance mixed layer that is arranged at target object the place ahead; Described the first capacitance resistance mixed layer consists of a plurality of first module structures, described first module structure comprises first, second, third, fourth elementary cell, and the first elementary cell comprises the first branch and from the first branch two ends, makes progress vertically extending the second branch and San branch; The first elementary cell is branched into rotating shaft with second to turn clockwise 90 ° and obtains the second elementary cell, the second elementary cell is branched into rotating shaft with second unit second and turn clockwise 90 ° and obtain the 3rd elementary cell, the 3rd elementary cell is branched into rotating shaft with the 3rd elementary cell second and turn clockwise 90 ° and obtain the 4th elementary cell; During by the first elementary cell to the four elementary unit groups synthesis unit structure, first elementary cell the second branch overlaps with second elementary cell the first branch, second elementary cell the second branch overlaps with the 3rd elementary cell the first branch, the 3rd elementary cell the second branch overlaps with the 4th elementary cell the first branch, and the 4th elementary cell the second branch overlaps with first elementary cell the first branch; Described the second capacitance resistance mixed layer consists of a plurality of second unit structures, and described second unit structure and first module structure difference be, equally spacedly between the second branch of second unit structure and San branch is placed with many Si branches.
Further, described a plurality of first module structure and second unit structure are combined into the first capacitance resistance mixed layer and the second capacitance resistance mixed layer in the following way: the branch of the first elementary cell of first module structure inserts in the gap that the 3rd elementary cell contiguous branch of adjacent first module structure forms non-contiguously, and the branch of the second elementary cell of first module structure inserts in the gap that the 4th elementary cell contiguous branch of adjacent first module structure forms non-contiguously; The branch of the first elementary cell of second unit structure inserts in the gap that the 3rd elementary cell contiguous branch of adjacent second unit structure forms non-contiguously, and the branch of the second elementary cell of second unit structure inserts in the gap that the 4th elementary cell contiguous branch of adjacent second unit structure forms non-contiguously.
Further, in described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, the length, width and the thickness that are positioned at all branches on same capacitance resistance mixed layer are all equal, and the spacing of contiguous branch is equal to branch's width.
Further, in described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, all branches thickness is 0.015 to 0.025 millimeter.
Further, described the first capacitance resistance mixed layer equates with the spacing of target object with spacing and the second capacitance resistance mixed layer of the second capacitance resistance mixed layer.
Further, the spacing of described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer is 2-3 millimeter.
Further, between described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and between the second capacitance resistance mixed layer and target object, be filled with air or for vacuum.
Further, the square resistance of described the first capacitance resistance mixed layer is 50 to 180 ohm, and the square resistance of described the second capacitance resistance mixed layer is 30 to 50 ohm.
Further, the square resistance of described the first capacitance resistance mixed layer is 60 to 90 ohm, and the square resistance of described the second capacitance resistance mixed layer is 10 to 30 ohm.
Further, equally spacedly between the second branch of second unit structure and San branch be placed with three Si branches.
The present invention, by the capacitance resistance mixed layer of special construction is set, can reach wideband, the electromagnetic effect of efficient absorption.Absorbing material of the present invention is simple in structure, thinner thickness, is no matter in high band or in low-frequency range, all has good absorbing property.
Accompanying drawing explanation
Fig. 1 is the structural representation of absorbing material of the present invention;
First module structure and decomposing schematic representation thereof on Fig. 2 the first capacitance resistance mixed layer;
Fig. 3 is the structural representation that shown in a plurality of Fig. 2, first module structural arrangement forms the first capacitance resistance mixed layer;
Fig. 4 is second unit structural representation on the second capacitance resistance mixed layer;
Fig. 5 is the structural representation that shown in a plurality of Fig. 4, second unit structural arrangement forms the second capacitance resistance mixed layer;
Fig. 6 is the simulation result schematic diagram of absorbing material the first better embodiment of the present invention;
Fig. 7 is the simulation result schematic diagram of absorbing material the second better embodiment of the present invention.
Embodiment
Please refer to Fig. 1, the structural representation that Fig. 1 is absorbing material of the present invention.Thereby the present invention realizes wideband, efficient absorption electromagnetic wave effect by the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 are set before target object.In Fig. 1, target object adopts sheet metal 300 to represent, during practical application, target object can be all kinds of objects with metal surface, such as aircraft, radar etc., when target object does not have metal surface when practical application, can attach metal level on target object surface.
In a preferred embodiment, the first capacitance resistance mixed layer 100 equates with the spacing of target object 300 with spacing and the second capacitance resistance mixed layer 200 of the second capacitance resistance mixed layer 200.Preferably, the spacing of the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 is 2-3 millimeter.Between the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 and between the second capacitance resistance mixed layer 200 and target object 300, can fill air, also can be vacuum.The spacing and/or the second capacitance resistance mixed layer 200 that change the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 can change with the spacing of target object 300 the electromagnetic wave frequency range that absorbing material can respond, when spacing is wider, be equivalent to absorbing material thickness thickening, now absorbing material is to having good wave-absorbing effect compared with the electromagnetic wave of low-frequency range, when spacing is narrower, absorbing material has good wave-absorbing effect to the electromagnetic wave of higher frequency band.
Please refer to Fig. 2, Fig. 3.Fig. 2 is first module structure and decomposing schematic representation thereof on the first capacitance resistance mixed layer 100, and Fig. 3 is the structural representation that shown in a plurality of Fig. 2, first module structural arrangement forms the first capacitance resistance mixed layer.In Fig. 2 and Fig. 3, the material of the first capacitance resistance mixed layer self has certain resistance value, and in the first capacitance resistance mixed layer, adjacent branch can be equivalent to electric capacity under electromagnetic effect, thereby has formed capacitance resistance mixed layer.The material that changes the first capacitance resistance mixed layer can change its resistance value, and a minute number that changes the first capacitance resistance mixed layer can change its equivalent capacitance value.Arranging of the first capacitance resistance mixed layer 100 and the second capacitance resistance mixed layer 200 meets transmission line theory, thereby can realize wideband, efficient wave-absorbing effect by adjusting square resistance and the equivalent capacity of capacitance resistance mixed layer.Transmission line theory can reference papers: Kazemzadeh and A.Karlsson, Multilayered Wideband Absorbers for Oblique Angle of Incidence, IEEE Trans.Antennas Propag., Vol 58,3637-3646, (2010).
In Fig. 2, the first capacitance resistance mixed layer first module structure comprises first, second, third, fourth elementary cell, and the first elementary cell comprises the first branch 10 and from the first branch 10 two ends, makes progress vertically extending the second branch 11 and San branch 12.In first module structure, the length of Ge Tiao branch, width and thickness all equate.
The first elementary cell be take to the second branch 11 and as rotating shaft turns clockwise 90 °, obtain the second elementary cell, the second elementary cell be take to second unit the second branch 11 ' obtain the 3rd elementary cell as rotating shaft turns clockwise 90 °, the 3rd elementary cell be take to the 3rd elementary cell the second branch 11 and " as rotating shaft turns clockwise 90 °, obtain the 4th elementary cell.When the first elementary cell to the four elementary cells are combined into the first capacitance resistance mixed layer cellular construction, first elementary cell the second branch 11 and second elementary cell the first branch 10 ' overlap, second elementary cell the second branch 11 ' " overlap; the 3rd elementary cell the second branch 11 " with the 4th elementary cell the first branch 10 " ' overlap, the 4th elementary cell the second branch 11 " ' overlap with first elementary cell the first branch 10 with the 3rd elementary cell the first branch 10.
In Fig. 3, first module structure shown in a plurality of Fig. 2 combines in the following way: the branch of the first elementary cell of first module structure inserts in the gap that the 3rd elementary cell contiguous branch of adjacent first module structure forms non-contiguously, and the branch of the second elementary cell of first module structure inserts in the gap that the 4th elementary cell contiguous branch of adjacent first module structure forms non-contiguously.Preferably, on the first capacitance resistance mixed layer, between adjacent branch, spacing equates, the spacing between adjacent branch is identical with branch width.
Please refer to Fig. 4, Fig. 4 is second unit structural representation on the second capacitance resistance mixed layer.The difference of second unit structure and first module structure is: equally spacedly between the second branch of second unit structure and San branch be placed with many Si branches 13.Length, width and the thickness of second unit structure Zhong Ge branch all equates.
In Fig. 5, second unit structure shown in a plurality of Fig. 4 combines in the following way: the branch of the first elementary cell of second unit structure inserts in the gap that the 3rd elementary cell contiguous branch of adjacent second unit structure forms non-contiguously, and the branch of the second elementary cell of second unit structure inserts in the gap that the 4th elementary cell contiguous branch of adjacent second unit structure forms non-contiguously.Preferably, on the second capacitance resistance mixed layer, between adjacent branch, spacing equates, the spacing between adjacent branch is identical with branch width.
Owing to changing the resistance value of the first capacitance resistance mixed layer and the spacing of the second capacitance resistance mixed layer and the spacing of the second capacitance resistance mixed layer and target object and change the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, can change absorbing material of the present invention to electromagnetic response effect.Below by two better embodiment, illustrate that the present invention are to electromagnetic assimilation effect.
In the first better embodiment, the spacing of the spacing of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and the second capacitance resistance mixed layer and target object is 2 millimeters, the thickness of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer Shang Ge branch is 0.015 to 0.025 millimeter, and absorbing material gross thickness is only approximately 4 millimeters; The first capacitance resistance mixed layer square resistance is 150 to 180 ohm, and the square resistance of the second capacitance resistance mixed layer is 30 to 50 ohm.With this understanding, the simulation result schematic diagram of absorbing material as shown in Figure 6.As can be seen from Figure 6, absorbing material under 15.7 to 42.1GHZ frequency range, S11 parameter value all-below 15dB.
In the first better embodiment, the spacing of the spacing of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and the second capacitance resistance mixed layer and target object is 2 millimeters, the thickness of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer Shang Ge branch is 0.015 to 0.025 millimeter, and absorbing material gross thickness is only approximately 4 millimeters; The first capacitance resistance mixed layer square resistance is 50 to 180 ohm, and the square resistance of the second capacitance resistance mixed layer is 30 to 50 ohm.With this understanding, the simulation result schematic diagram of absorbing material as shown in Figure 6.As can be seen from Figure 6, absorbing material under 15.7 to 42.1GHZ frequency range, S11 parameter value all-below 15dB.
In the second better embodiment, the spacing of the spacing of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and the second capacitance resistance mixed layer and target object is 3 millimeters, the thickness of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer Shang Ge branch is 0.015 to 0.025 millimeter, and absorbing material gross thickness is only approximately 6 millimeters; The first capacitance resistance mixed layer square resistance is 10-30 ohm, and the square resistance of the second capacitance resistance mixed layer is 60 to 90 ohm.With this understanding, the simulation result schematic diagram of absorbing material as shown in Figure 7.As can be seen from Figure 7, absorbing material under 8.6 to 21.9GHZ frequency range, S11 parameter value all-below 15dB.Compare the first better embodiment, in this better embodiment, the electromagnetic wave frequency range that absorbing material absorbs is lower, main cause is that its thickness is thicker, simultaneously for still can reach the square resistance that wave-absorbing effect has also correspondingly been adjusted the first capacitance resistance mixed layer and the second capacitance resistance mixed layer under this thickness.
Can imagine ground, for adapting to the electromagnetic wave of different frequency range, widen the range of application of absorbing material, can correspondingly adjust the gap of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and/or the square resistance of the first capacitance resistance mixed layer and the second capacitance resistance mixed layer.
By reference to the accompanying drawings embodiments of the invention are described above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; rather than restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not departing from the scope situation that aim of the present invention and claim protect, also can make a lot of forms, within these all belong to protection of the present invention.
Claims (10)
1. an absorbing material, is characterized in that: comprise the first capacitance resistance mixed layer and the second capacitance resistance mixed layer that are arranged at target object the place ahead; Described the first capacitance resistance mixed layer consists of a plurality of first module structures, described first module structure comprises first, second, third, fourth elementary cell, and the first elementary cell comprises the first branch and from the first branch two ends, makes progress vertically extending the second branch and San branch; The first elementary cell is branched into rotating shaft with second to turn clockwise 90 ° and obtains the second elementary cell, the second elementary cell is branched into rotating shaft with second unit second and turn clockwise 90 ° and obtain the 3rd elementary cell, the 3rd elementary cell is branched into rotating shaft with the 3rd elementary cell second and turn clockwise 90 ° and obtain the 4th elementary cell; During by the first elementary cell to the four elementary unit groups synthesis unit structure, first elementary cell the second branch overlaps with second elementary cell the first branch, second elementary cell the second branch overlaps with the 3rd elementary cell the first branch, the 3rd elementary cell the second branch overlaps with the 4th elementary cell the first branch, and the 4th elementary cell the second branch overlaps with first elementary cell the first branch; Described the second capacitance resistance mixed layer consists of a plurality of second unit structures, and described second unit structure and first module structure difference be, equally spacedly between the second branch of second unit structure and San branch is placed with many Si branches.
2. absorbing material as claimed in claim 1, it is characterized in that: described a plurality of first module structures and second unit structure are combined into the first capacitance resistance mixed layer and the second capacitance resistance mixed layer in the following way: the branch of the first elementary cell of first module structure inserts in the gap that the 3rd elementary cell contiguous branch of adjacent first module structure forms non-contiguously, the branch of the second elementary cell of first module structure inserts in the gap that the 4th elementary cell contiguous branch of adjacent first module structure forms non-contiguously; The branch of the first elementary cell of second unit structure inserts in the gap that the 3rd elementary cell contiguous branch of adjacent second unit structure forms non-contiguously, and the branch of the second elementary cell of second unit structure inserts in the gap that the 4th elementary cell contiguous branch of adjacent second unit structure forms non-contiguously.
3. absorbing material as claimed in claim 2, it is characterized in that: in described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, the length, width and the thickness that are positioned at all branches on same capacitance resistance mixed layer are all equal, and the spacing of contiguous branch is equal to branch's width.
4. absorbing material as claimed in claim 3, is characterized in that: in described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer, all branches thickness is 0.015 to 0.025 millimeter.
5. absorbing material as claimed in claim 1, is characterized in that: described the first capacitance resistance mixed layer equates with the spacing of target object with spacing and the second capacitance resistance mixed layer of the second capacitance resistance mixed layer.
6. absorbing material as claimed in claim 5, is characterized in that: the spacing of described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer is 2-3 millimeter.
7. absorbing material as claimed in claim 5, is characterized in that: between described the first capacitance resistance mixed layer and the second capacitance resistance mixed layer and between the second capacitance resistance mixed layer and target object, be filled with air or be vacuum.
8. absorbing material as claimed in claim 5, is characterized in that: the square resistance of described the first capacitance resistance mixed layer is 150 to 180 ohm, and the square resistance of described the second capacitance resistance mixed layer is 30 to 50 ohm.
9. absorbing material as claimed in claim 5, is characterized in that: the square resistance of described the first capacitance resistance mixed layer is 60 to 90 ohm, and the square resistance of described the second capacitance resistance mixed layer is 10 to 30 ohm.
10. absorbing material as claimed in claim 1, is characterized in that: equally spacedly between the second branch of second unit structure and San branch be placed with three Si branches.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021120531A1 (en) * | 2019-12-20 | 2021-06-24 | 深圳光启尖端技术有限责任公司 | Wave-absorbing metamaterial, wave-absorbing structural member, and mobile carrier |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001032231A (en) * | 1999-07-23 | 2001-02-06 | Soken Kogyo Kk | Lattice type installation material, wave absorbing structure using it, hume pipe used for the structure, and construction method of wave absorbing structure |
| CN101320835A (en) * | 2008-07-17 | 2008-12-10 | 上海联能科技有限公司 | Novel barron structure of four arm helical antenna |
| CN102480017A (en) * | 2011-06-01 | 2012-05-30 | 深圳光启高等理工研究院 | Metamaterial prepared on basis of CMOS (complementary metal oxide semiconductor) process |
| KR20120068571A (en) * | 2010-12-17 | 2012-06-27 | 한국전자통신연구원 | Broadband metamaterial and control method of broadband metamaterial with controllable effective constitutive |
| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
-
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- 2012-09-29 CN CN201210371560.9A patent/CN103717046B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001032231A (en) * | 1999-07-23 | 2001-02-06 | Soken Kogyo Kk | Lattice type installation material, wave absorbing structure using it, hume pipe used for the structure, and construction method of wave absorbing structure |
| CN101320835A (en) * | 2008-07-17 | 2008-12-10 | 上海联能科技有限公司 | Novel barron structure of four arm helical antenna |
| KR20120068571A (en) * | 2010-12-17 | 2012-06-27 | 한국전자통신연구원 | Broadband metamaterial and control method of broadband metamaterial with controllable effective constitutive |
| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
| CN102480017A (en) * | 2011-06-01 | 2012-05-30 | 深圳光启高等理工研究院 | Metamaterial prepared on basis of CMOS (complementary metal oxide semiconductor) process |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021120531A1 (en) * | 2019-12-20 | 2021-06-24 | 深圳光启尖端技术有限责任公司 | Wave-absorbing metamaterial, wave-absorbing structural member, and mobile carrier |
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