CN103715677B - Electrostatic discharge protective equipment - Google Patents
Electrostatic discharge protective equipment Download PDFInfo
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- CN103715677B CN103715677B CN201210379972.7A CN201210379972A CN103715677B CN 103715677 B CN103715677 B CN 103715677B CN 201210379972 A CN201210379972 A CN 201210379972A CN 103715677 B CN103715677 B CN 103715677B
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Abstract
The invention relates to a kind of electrostatic discharge protective equipment, it includes thyristor and path switching unit.Thyristor includes that the first connection end, the second connection end, the first control end and second control end, and the first connection end and second connects end and is electrically connected with the first distribution and the second distribution.Path switching unit is electrically connected with the first distribution, the first control end and second controls end.When input signal supply to the first distribution, path switching unit provides the first current path being controlled end by the first distribution to first in response to input signal.When electrostatic pulse occurs in the first distribution, path switching unit provides in response to electrostatic pulse and is controlled end to the second the second current path controlling end by first.
Description
Technical field
The present invention relates to a kind of electrostatic discharge protective equipment, particularly relate to a kind of electrostatic discharge protective equipment with thyristor.
Background technology
Static discharge (electrostaticdischarge; ESD) integrated circuit generation electrostatic overstress (electrostaticoverstress) or the main cause of permanent damage are caused often; therefore integrated circuit all can add the design of electrostatic discharge protective equipment, thereby to prevent the infringement of static discharge.
In recent years, thyristor (siliconcontrolledrectifier is called for short SCR) has become electrostatic discharge protective equipment base components in design.Wherein, thyristor has a PNPN semiconductor structure, therefore can the circuit structure that combines with a NPN transistor of equivalence Cheng Youyi PNP transistor.On reality is applied, when an esd event occurs, avalanche breakdown (avalanchebreakdown) must be initially formed between n-well and P-type substrate in PNPN semiconductor structure, thyristor could simultaneously turn on PNP transistor and NPN transistor by avalanche breakdown electric current afterwards, and then forms the discharge path in order to release electrostatic pulse.
In other words, existing thyristor must lean on the avalanche breakdown electric current in PNPN semiconductor structure, simultaneously turns on the PNP transistor in equivalence and NPN transistor.But, this kind of conduction mode often reduces the conducting speed of thyristor, and then affects the protective capacities of electrostatic discharge protective equipment.
As can be seen here, above-mentioned existing electrostatic discharge protective equipment in structure and uses, it is clear that has still suffered from inconvenience and defect, and has urgently been further improved.For the problem solving above-mentioned existence, relevant manufactures seeks solution the most painstakingly, but the design having no applicable has been developed, and common product does not has appropriate structure to can solve the problem that the problems referred to above the most always, this is clearly the anxious problem to be solved of relevant dealer.The most how to found the electrostatic discharge protective equipment of a kind of new structure, one of current important research and development problem of real genus, also become the target that current industry pole need to be improved.
Summary of the invention
It is an object of the invention to; overcome the defect that existing electrostatic discharge protective equipment exists; and the electrostatic discharge protective equipment of a kind of new structure is provided; to be solved technical problem is that makes it utilize path switching unit to control the current path of thyristor; and thereby promote the conducting speed of thyristor, it is very suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of electrostatic discharge protective equipment proposed according to the present invention, including thyristor and path switching unit.Thyristor includes that the first connection end, the second connection end, the first control end and second control end, and the first connection end and second connects end and is electrically connected with the first distribution and the second distribution.Path switching unit is electrically connected with the first distribution, the first control end and second controls end.When input signal supply to the first distribution, path switching unit provides the first current path being controlled end by the first distribution to first in response to input signal.When electrostatic pulse occurs in the first distribution, path switching unit provides in response to electrostatic pulse and is controlled end to the second the second current path controlling end by first.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid electrostatic discharge protective equipment, wherein said path switching unit includes the first switch, second switch and control circuit.First switch is electrically connected at the first distribution and first and controls between end.Second switch is electrically connected at the first control end and second and controls between end.Control circuit is electrically connected with the first distribution, the second distribution, the first switch and second switch.Control circuit is opened second switch and closes the first switch in response to electrostatic pulse, to provide the second current path by second switch.Additionally, control circuit is opened the first switch and closes second switch in response to input signal, to provide the first current path by the first switch.
Aforesaid electrostatic discharge protective equipment, wherein said control circuit includes electric capacity and resistance.First end of electric capacity is electrically connected with the first distribution.First end of resistance is electrically connected with the second end of electric capacity, and the second end of resistance is electrically connected with the second distribution.Control circuit produces the first control signal by the second end of electric capacity.
Aforesaid electrostatic discharge protective equipment, the first wherein said switch is made up of with N-type transistor P-type transistor respectively with second switch, and P-type transistor is controlled by the first control signal with N-type transistor.
Aforesaid electrostatic discharge protective equipment, wherein said control circuit further includes a phase inverter, and the input of this phase inverter receives this first control signal, and the outfan of this phase inverter is in order to produce one second control signal.
Aforesaid electrostatic discharge protective equipment; the first wherein said switch is made up of one first P-type transistor and one second P-type transistor respectively with this second switch; and this first P-type transistor is controlled by this first control signal, this second P-type transistor is controlled by this second control signal.
Aforesaid electrostatic discharge protective equipment, wherein said control circuit includes: a resistance, and its first end is electrically connected with this first distribution, and the second end of this resistance is in order to produce one first control signal；One electric capacity, its first end is electrically connected with the second end of this resistance, and the second end of this electric capacity is electrically connected with this second distribution；And a phase inverter, its input receives this first control signal, and the outfan of this phase inverter is in order to produce one second control signal.
Aforesaid electrostatic discharge protective equipment; the first wherein said switch is made up of one first P-type transistor and one second P-type transistor respectively with this second switch; and this first P-type transistor is controlled by this second control signal, this second P-type transistor is controlled by this first control signal.
Aforesaid electrostatic discharge protective equipment, wherein said control circuit includes the first P-type transistor, the first N-type transistor, the second P-type transistor and the second N-type transistor.The source electrode of the first P-type transistor is electrically connected with the first distribution.The drain electrode of the first N-type transistor is electrically connected with the drain electrode of the first P-type transistor, and the grid of the first N-type transistor is electrically connected with the grid of the first P-type transistor, and the source electrode of the first N-type transistor is electrically connected with the second distribution.The source electrode of the second P-type transistor is electrically connected with the first distribution, and the grid of the second P-type transistor is electrically connected with the drain electrode of the first P-type transistor, and the drain electrode of the second P-type transistor is in order to produce the first control signal and to be electrically connected with the grid of the first P-type transistor.The drain electrode of the second N-type transistor is electrically connected with the drain electrode of the second P-type transistor, and the grid of the second N-type transistor receives supply voltage, and the source electrode of the second N-type transistor is electrically connected with the second distribution.
Aforesaid electrostatic discharge protective equipment, the first wherein said switch is made up of a P-type transistor and a N-type transistor respectively with this second switch, and this P-type transistor is controlled by this first control signal with this N-type transistor.
Aforesaid electrostatic discharge protective equipment; the drain electrode of the first wherein said P-type transistor is in order to produce one second control signal; this first switch is made up of one the 3rd P-type transistor and one the 4th P-type transistor respectively with this second switch; and the 3rd P-type transistor be controlled by this first control signal, the 4th P-type transistor is controlled by this second control signal.
Aforesaid electrostatic discharge protective equipment, wherein said control circuit further includes an electric capacity, and the first end of electric capacity is electrically connected with the first distribution, and the second end of electric capacity is electrically connected with the grid of the first P-type transistor.
Aforesaid electrostatic discharge protective equipment, wherein said thyristor includes: a P-type substrate;One n-well, is configured in this P-type substrate；One first P+ type doped region, is configured in this n-well, and is electrically connected with this first connection end;One the oneth N+ type doped region, is configured in this n-well, and is electrically connected with this first control end；One second P+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；One the 2nd N+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；And one the 3rd P+ type doped region, it is configured in this P-type substrate, and between this first P+ type doped region and the 2nd N+ type doped region, and the 3rd P+ type doped region is electrically connected with this and second controls end.
Aforesaid electrostatic discharge protective equipment, wherein said thyristor further includes one the 3rd N+ type doped region, and the 3rd N+ type doped region part is configured in this n-well.
Aforesaid electrostatic discharge protective equipment, wherein said thyristor includes: a P-type substrate;One n-well, is configured in this P-type substrate；One first P+ type doped region, is configured in this n-well, and is electrically connected with this first connection end;One the oneth N+ type doped region, is configured in this n-well, and is electrically connected with this first control end；One second P+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；One the 2nd N+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；And one the 3rd P+ type doped region, part is configured in this n-well, and is electrically connected with this and second controls end.
The object of the invention to solve the technical problems realizes the most by the following technical solutions.A kind of electrostatic discharge protective equipment proposed according to the present invention, including thyristor and path switching unit.Thyristor includes that the first connection end, the second connection end, the first control end and second control end, and the first connection end and second connects end and is electrically connected with the first distribution and the second distribution.Path switching unit includes the first switch being connected between the first distribution and the first control end and is connected to the second switch that the first control end and second controls between end.When input signal supply to the first distribution, path switching unit is opened first and is switched and close second switch.When electrostatic pulse occurs in the first distribution, path switching unit is closed first and is switched and open second switch.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid electrostatic discharge protective equipment, wherein said path switching unit further includes control circuit.Wherein, control circuit is electrically connected with the first distribution, the second distribution, the first switch and second switch.Additionally, control circuit is opened second switch and closes the first switch in response to electrostatic pulse, and control circuit is opened the first switch and closes second switch in response to input signal.
Aforesaid electrostatic discharge protective equipment, wherein said control circuit includes: an electric capacity, and its first end is electrically connected with this first distribution；And a resistance, its first end is electrically connected with the second end of this electric capacity, and the second end of this resistance is electrically connected with this second distribution, and wherein this control circuit produces one first control signal by the second end of this electric capacity.
Aforesaid electrostatic discharge protective equipment, the first wherein said switch is made up of a P-type transistor and a N-type transistor respectively with this second switch, and this P-type transistor is controlled by this first control signal with this N-type transistor.
Aforesaid electrostatic discharge protective equipment, wherein said control circuit includes: a resistance, and its first end is electrically connected with this first distribution, and the second end of this resistance is in order to produce one first control signal；One electric capacity, its first end is electrically connected with the second end of this resistance, and the second end of this electric capacity is electrically connected with this second distribution；And a phase inverter, its input receives this first control signal, and the outfan of this phase inverter is in order to produce one second control signal.
Aforesaid electrostatic discharge protective equipment; the first wherein said switch is made up of one first P-type transistor and one second P-type transistor respectively with this second switch; and this first P-type transistor is controlled by this second control signal, this second P-type transistor is controlled by this first control signal.
Aforesaid electrostatic discharge protective equipment, wherein said control circuit includes: one first P-type transistor, and its source electrode is electrically connected with this first distribution；One first N-type transistor, its drain electrode is electrically connected with the drain electrode of this first P-type transistor, and the grid of this first N-type transistor is electrically connected with the grid of this first P-type transistor, and the source electrode of this first N-type transistor is electrically connected with this second distribution；One second P-type transistor, its source electrode is electrically connected with this first distribution, the grid of this second P-type transistor is electrically connected with the drain electrode of this first P-type transistor, and the drain electrode of this second P-type transistor is in order to produce one first control signal and to be electrically connected with the grid of this first P-type transistor；And one second N-type transistor, its drain electrode is electrically connected with the drain electrode of this second P-type transistor, and the grid of this second N-type transistor receives a supply voltage, and the source electrode of this second N-type transistor is electrically connected with this second distribution.
Aforesaid electrostatic discharge protective equipment, the first wherein said switch is made up of a P-type transistor and a N-type transistor respectively with this second switch, and this P-type transistor is controlled by this first control signal with this N-type transistor.
Aforesaid electrostatic discharge protective equipment, wherein said thyristor includes: a P-type substrate;One n-well, is configured in this P-type substrate；One first P+ type doped region, is configured in this n-well, and is electrically connected with this first connection end;One the oneth N+ type doped region, is configured in this n-well, and is electrically connected with this first control end；One second P+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；One the 2nd N+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；And one the 3rd P+ type doped region, it is configured in this P-type substrate, and between this first P+ type doped region and the 2nd N+ type doped region, and the 3rd P+ type doped region is electrically connected with this and second controls end.
Aforesaid electrostatic discharge protective equipment, wherein said thyristor includes: a P-type substrate;One n-well, is configured in this P-type substrate；One first P+ type doped region, is configured in this n-well, and is electrically connected with this first connection end;One the oneth N+ type doped region, is configured in this n-well, and is electrically connected with this first control end；One second P+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；One the 2nd N+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；And one the 3rd P+ type doped region, part is configured in this n-well, and is electrically connected with this and second controls end.
The present invention compared with prior art has clear advantage and beneficial effect.By technique scheme; electrostatic discharge protective equipment of the present invention at least has following advantages and beneficial effect: the present invention is the current path utilizing path switching unit to control thyristor; to cause thyristor need not pass through the avalanche breakdown electric current between n-well and P-type substrate, so that it may simultaneously turn on its internal PNP transistor and NPN transistor.In other words, when electrostatic discharge event occurs, thyristor will can accelerate its conducting speed under the control of path switching unit, and then contributes to increasing the protective capacities of electrostatic discharge protective equipment.
In sum, the invention relates to a kind of electrostatic discharge protective equipment, it includes thyristor and path switching unit.Thyristor includes that the first connection end, the second connection end, the first control end and second control end, and the first connection end and second connects end and is electrically connected with the first distribution and the second distribution.Path switching unit is electrically connected with the first distribution, the first control end and second controls end.When input signal supply to the first distribution, path switching unit provides the first current path being controlled end by the first distribution to first in response to input signal.When electrostatic pulse occurs in the first distribution, path switching unit provides in response to electrostatic pulse and is controlled end to the second the second current path controlling end by first.The present invention has the most progressive technically, and has obvious good effect, is really a new and innovative, progressive, practical new design.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention, and can be practiced according to the content of description, and in order to the above and other objects, features and advantages of the present invention can be become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, describe in detail as follows.
Accompanying drawing explanation
Fig. 1 is based on the schematic diagram of the electrostatic discharge protective equipment of an one exemplary embodiment of the present invention.
Fig. 2 is based on the equivalent circuit diagram of the electrostatic discharge protective equipment of an one exemplary embodiment of the present invention.
Fig. 3 is based on the performance diagram of the thyristor of an one exemplary embodiment of the present invention.
Fig. 4-Fig. 5 is based on the structural representation of the thyristor of an exemplary embodiment of the present invention respectively.
Fig. 6-Fig. 8 is based on the circuit diagram of the path switching unit of an one exemplary embodiment of the present invention respectively.
Fig. 9 is based on the schematic diagram of the control circuit of an one exemplary embodiment of the present invention.
Figure 10 is based on the circuit diagram of the path switching unit of another one exemplary embodiment of the present invention.
Figure 11 is based on the schematic diagram of the control circuit of another one exemplary embodiment of the present invention.
Figure 12-Figure 16 is based on the circuit diagram of the path switching unit of the yet another exemplary embodiment of the present invention respectively.
100: electrostatic discharge protective equipment
110,110-1,110-2: thyristor
TM1: the first connects end
TM2: the second connects end
CT1: the first controls end
CT2: the second controls end
120: path switching unit
121: control circuit
122: the first switches
123: second switch
130:P type substrate
140:N type wellblock
151～153:P+ type doped regions
161～162,410:N+ type doped region
101: the first distributions
102: the second distributions
103: weld pad
A1, A2: the two ends of the first switch
The two ends of B1, B2: second switch
BP1:PNP transistor
BN1:NPN transistor
210,220: current path
310,320: curve
C61, C101, C12: electric capacity
R21, R22, R61, R101: resistance
MP61, MP62, MP101, MP102, MP11, MP121～MP123, MP124, MP161, MP162:P transistor npn npn
MN61, MN9, MN11, MN121～MN123, MN161, MN162:N transistor npn npn
S61, S101, S121: the first control signal
S62, S102, S122: the second control signal
710～740,1010,1310～1320,1510～1520: phase inverter
CP: parasitic capacitance
Detailed description of the invention
By further illustrating the technological means and effect that the present invention taked by reaching predetermined goal of the invention; below in conjunction with accompanying drawing and preferred embodiment; to its detailed description of the invention of electrostatic discharge protective equipment, structure, feature and effect thereof of proposing according to the present invention, after describing in detail such as.
For the present invention aforementioned and other technology contents, feature and effect, can clearly present in following cooperation is with reference to the detailed description of graphic preferred embodiment.For convenience of explanation, below in an example, identical element represents to be identically numbered.
Fig. 1 is based on the schematic diagram of the electrostatic discharge protective equipment of an one exemplary embodiment of the present invention.Referring to shown in Fig. 1, electrostatic discharge protective equipment 100 includes thyristor 110 and path switching unit 120.Wherein, thyristor 110 includes that the first connection end TM1, the second connection end TM2, the first control end control end CT2 with CT1 and second.Path switching unit 120 includes control circuit the 121, first switch 122 and second switch 123.
For path switching unit 120, the first switch 122 is electrically connected at the first distribution 101 and first and controls between end CT1.Thereby, when the first switch 122 is unlocked, the first switch 122 provides may be used to by first current path of the first distribution 101 to the first control end CT1.Second switch 123 is electrically connected at the first control end CT1 and second and controls between end CT2.Thereby, when second switch 123 is unlocked, second switch 123 provides may be used to by the first the second current path controlling end CT1 to second control end CT2.Control circuit 121 is electrically connected with the first distribution the 101, second distribution the 102, first switch 122 and second switch 123, and is used for controlling the first switch 122 and second switch 123.
For thyristor 110, thyristor 110 connects end TM2 by the first connection end TM1 and second, is respectively and electrically connected to the first distribution 101 and the second distribution 102.Additionally, thyristor 110 includes P-type substrate 130, n-well 140, P+ type doped region 151～153 and N+ type doped region 161～162.Wherein, in n-well 140 is configured at P-type substrate 130.P+ type doped region 151 is configured in n-well 140, and is electrically connected with the first connection end TM1.N+ type doped region 161 is configured in n-well 140, and is electrically connected with the first control end CT1.P+ type doped region 152 is configured in P-type substrate 130, and is electrically connected with the second connection end TM2.N+ type doped region 162 is configured in P-type substrate 130, and is electrically connected with the second connection end TM2.P+ type doped region 153 is configured in P-type substrate 130, and between P+ type doped region 151 and N+ type doped region 162, and P+ type doped region 153 is electrically connected with the second control end CT2.
Fig. 2 is based on the equivalent circuit diagram of the electrostatic discharge protective equipment of an one exemplary embodiment of the present invention.Please refer to shown in Fig. 1 Yu Fig. 2, P+ type doped region 151, n-well 140 in thyristor 110 may be used to form longitudinal PNP transistor BP1 with P-type substrate 130, and n-well 140, P-type substrate 130 then may be used to form horizontal NPN transistor BN1 with N+ type doped region 162.Additionally, the resistance R21 in Fig. 2 is then the equivalent resistance contributed by P-type substrate 130, and resistance R22 is the equivalent resistance contributed by n-well 140.In other words, thyristor 110 equivalence can become the circuit structure combined by PNP transistor BP1, NPN transistor BN1, resistance R21 with resistance R22.
On reality is applied, electrostatic discharge protective equipment 100 is mainly in order to guide the electrostatic pulse from weld pad 103, to avoid electrostatic pulse to cause damage integrated circuit (not showing).For example, when electrostatic discharge event occurs, electrostatic pulse will be entered and occur in by weld pad 103 on first distribution 101.Now, control circuit 121 will be responsive to electrostatic pulse, and open (turnon) second switch 123 and close (turnoff) first switch 122.Thereby, as it is shown in figure 1, along with the unlatching of second switch 123, electrostatic pulse will be transferred directly to, via P+ type doped region 151, n-well 140, N+ type doped region 161 and second switch 123, the P+ type doped region 153 being positioned in P-type substrate 130.Consequently, it is possible to the PN junction (P-Njunction) that P+ type doped region 151 and n-well 140 are formed will be maintained under forward bias voltage drop, that is the base-emitter-base bandgap grading of PNP transistor BP1 will be biased under forward bias voltage drop, and then promote the conducting of PNP transistor BP1.
Additionally, the base-emitter current of PNP transistor BP1 will can flow directly into P-type substrate 130 by the second switch 123 of conducting, and then the voltage quasi position of P-type substrate 130 is promoted to rise.That is, as shown in the current path 210 and 220 of Fig. 2, the base-emitter current from PNP transistor BP1 will can be transferred directly to resistance R21 by the second switch 123 of resistance R22 with conducting, and then is formed in order to the voltage difference turning on NPN transistor BN1.In other words, thyristor 110 is without using the avalanche breakdown electric current formed between n-well 140 and P-type substrate 130, so that it may simultaneously turn on PNP transistor BP1 and NPN transistor BN1.Consequently, it is possible to when electrostatic discharge event occurs, thyristor 110 will can accelerate its conducting speed along with the unlatching of second switch 123, and then electrostatic pulse is directed to be connected to the second distribution 102 of earth terminal rapidly.
On the other hand, when integrated circuit normal operation, input signal will be supplied to the first distribution 101 by weld pad 103.Now, control circuit 121 will be responsive to input signal, and open the first switch 122 and close second switch 123.Thereby, PNP transistor BP1 will be in the state being not turned on, and then with keeping voltage (holdingvoltage), the trigger voltage (triggervoltage) of thyristor 110 is pulled up to higher voltage quasi position.Consequently, it is possible to will can ensure that thyristor 110 maintains the state being not turned on, and then avoid the generation of leakage current.
For example, Fig. 3 is based on the performance diagram of thyristor of an one exemplary embodiment of the present invention.Wherein, curve 310 is to open and the characteristic curve of the voltage verses current of thyristor 110 in the case of the first switch 122 closedown at second switch 123, and curve 320 is then the characteristic curve of the voltage verses current of thyristor 110 in the case of the first switch 122 unlatching and second switch 123 are closed.As shown by plot line 310, when second switch 123 is unlocked, and when the first switch 122 is closed, trigger voltage will be pulled down to about 8.8 volts (V), and keeps voltage to will be pulled down to about 4.3 volts.Additionally, as shown by curve 320, when the first switch 122 is unlocked, and when second switch 123 is closed, trigger voltage will be pulled up to about 14.3 volts, and keep voltage will be pulled up to about 9.5 volts.
In other words, when electrostatic pulse occurs in the first distribution 101, closedown first is switched 122 and opens second switch 123 by path switching unit 120, that is path switching unit 120 will provide by the first the second current path controlling end CT1 to second control end CT2.Thereby, will can promote the conducting speed of thyristor 110, and cause the trigger voltage of thyristor 110 to decline with keeping voltage.Additionally, along with the reduction of trigger voltage, it is possible to improve the phenomenon of the uneven conducting of multiple thyristors (non-uniformturn-on) in electrostatic discharge protective equipment 100.On the other hand, when integrated circuit normal operation, that is when input signal supply to the first distribution 101, unlatching first is switched 122 and closes second switch 123 by path switching unit 120, that is path switching unit 120 will provide the first current path being controlled end CT1 by the first distribution 101 to the first.Thereby, PNP transistor BP1 can be closed, and the trigger voltage of thyristor 110 can be improved and keep voltage, and then avoid the generation of leakage current.
Although it should be noted that Fig. 1 embodiment lists the enforcement kenel of thyristor 110, but it being not limited to the present invention.For example, Fig. 4 Yu Fig. 5 is based on the structural representation of thyristor of an exemplary embodiment of the present invention respectively.As shown in Figure 4, the thyristor 110-1 in electrostatic discharge protective equipment 100 can be for example a horizontal thyristor of modified form (ModifiedLateralSCR is called for short MLSCR).Please refer to shown in Fig. 1 Yu Fig. 4, two thyristors 110 are at 110-1 Main Differences, and the P+ type doped region 153 in Fig. 1 is arranged in P-type substrate 130, and the P+ type doped region 153 in Fig. 4 is then that part is configured in n-well 140.Furthermore, as shown in Figure 5, the thyristor 110-2 in electrostatic discharge protective equipment 100 more can be for example the another kind of horizontal thyristor of modified form.Please refer to shown in Fig. 1 Yu Fig. 5, two thyristors 110 are at 110-2 Main Differences, and thyristor 110-2 further includes N+ type doped region 410, and N+ type doped region 410 part is configured in n-well 140.
Technical staff in order to cause this area to have usual knowledge can know more about the one exemplary embodiment cited by the present invention, and the circuit structure below for path switching unit illustrates.Wherein, for convenience, Fig. 1 more indicates the two ends of the first switch 122 and second switch 123 respectively with A1, A2, B1 and B2, and the circuit diagram of the path switching unit of act set forth below all will indicate A1, A2, B1 and B2 accordingly, in order to understand the first switch 122 and the second switch 123 annexation in Fig. 1 embodiment.
Fig. 6-Fig. 8 is based on the circuit diagram of the path switching unit of an one exemplary embodiment of the present invention respectively.Referring to shown in Fig. 6, control circuit 121 includes electric capacity C61 and resistance R61.Wherein, first end of electric capacity C61 is electrically connected with the first distribution 101.First end of resistance R61 is electrically connected with second end of electric capacity C61, and second end of resistance R61 is electrically connected with the second distribution 102.Additionally, the first switch 122 is to be made up of a P-type transistor MP61, and second switch 123 is to be made up of N-type transistor MN61.
Operationally, the electric capacity C61 and resistance R61 of concatenation is equivalent to a high pass filter, and second end of electric capacity C61 is in order to produce the first control signal S61.Thereby, when electrostatic pulse occurs in the first distribution 101, control circuit 121 will be equivalent to receive a high-frequency signal, thus the level of the first control signal S61 is switched to high voltage level.Additionally, first control signal S61 with high voltage level in order to turn on N-type transistor MN61, and will cause P-type transistor MP61 to maintain under the state being not turned on.On the other hand, when input signal supply to the first distribution 101, control circuit 121 will be equivalent to receive a low frequency signal, thus the level of the first control signal S61 is switched to low voltage level.Additionally, first control signal S61 with low voltage level in order to turn on P-type transistor MP61, and will cause N-type transistor MN61 to maintain under the state being not turned on.
Path switching unit cited by Fig. 7 is the extension of Fig. 6 embodiment.Wherein, being in place of the main difference of Fig. 7 with Fig. 6 two embodiment, the control circuit 121 in Fig. 7 further includes phase inverter 710～740.As it is shown in fig. 7, even number of inverters 710～720 is serially connected between second end of electric capacity C61 and the first switch 122, and even number of inverters 730～740 is serially connected between second end of electric capacity C61 and second switch 123.In other words, after the first control signal S61 can be respectively via the anti-phase process of even-times, then it is sent to the first switch 122 and second switch 123.Therefore, being sent to the first switch 122 still can be identical with the level of the first control signal S61 with the level of the signal of second switch 123.In other words, in Fig. 7 embodiment, when electrostatic pulse occurs in the first distribution 101, P-type transistor MP61 and N-type transistor MN61 still can be respectively received the signal with high voltage level.Additionally, when input signal supply to the first distribution 101, P-type transistor MP61 and N-type transistor MN61 still can be respectively received the signal with low voltage level.Thin portion as Fig. 7 embodiment operates, similar to Fig. 6 embodiment, therefore does not repeats them here.
Path switching unit cited by Fig. 8 is also the extension of Fig. 6 embodiment.Wherein, being in place of the main difference of Fig. 8 with Fig. 6 two embodiment, the control circuit 121 in Fig. 8 further includes a phase inverter 810, and the second switch 123 in Fig. 8 is to be made up of a P-type transistor MP62.As shown in Figure 8, the input of phase inverter 810 is in order to receive the first control signal S61, and the outfan of phase inverter 810 is in order to produce the second control signal S62.In other words, the first control signal S61 and the second control signal S62 are two the most anti-phase control signals.Additionally, in Fig. 8 embodiment, the first switch 122 is all to be made up of a P-type transistor with second switch 123, and in order to receive two the most anti-phase control signals S61 and S62.Therefore, when P-type transistor MP61 turns on, P-type transistor MP62 will be maintained at the state being not turned on.Relatively, when P-type transistor MP61 is not turned on, P-type transistor MP62 will be maintained at the state of conducting.Thin portion as Fig. 8 embodiment operates, similar to Fig. 6 embodiment, therefore does not repeats them here.
It should be noted that with Fig. 7 embodiment similarly, it is possible between second end of electric capacity C61 and the first switch 122 of Fig. 8, concatenate even number of inverters, or concatenate even number of inverters at the outfan of the phase inverter 810 of Fig. 8 between second switch 123.Additionally, on reality is applied, the resistance R61 in control circuit 121 cited by Fig. 6-Fig. 8 also can be realized by a transistor.For example, Fig. 9 is based on the schematic diagram of control circuit of an one exemplary embodiment of the present invention.As shown in Figure 9, control circuit 121 includes electric capacity C61 and N-type transistor MN9.Wherein, N-type transistor MN9 and electric capacity C61 are serially connected between the first distribution 101 and the second distribution 102, and the grid of N-type transistor MN9 is in order to receive a supply voltage VD.Thereby, when electrostatic pulse occurs in the first distribution 101, the grid of N-type transistor MN9 will be unable to receive supply voltage VD, thus is under the state being not turned on.Additionally, N-type transistor MN9 being not turned on equivalence can become a big resistance, and electric capacity C61 is in order to transmit electrostatic pulse, and then improves the level of the first control signal S61.On the other hand, when input signal supply to the first distribution 101, the grid of N-type transistor MN9 can receive supply voltage VD accordingly, and then is in the state of conducting.Additionally, electric capacity C61 now can intercept input signal, and N-type transistor MN9 by conducting is pulled down to low voltage level by the level of the first control signal S61.
Figure 10 is based on the circuit diagram of the path switching unit of another one exemplary embodiment of the present invention.Referring to shown in Figure 10, control circuit 121 includes resistance R101, electric capacity C101 and phase inverter 1010.Wherein, first end of resistance R101 is electrically connected with the first distribution 101, and second end of resistance R101 is in order to produce the first control signal S101.First end of electric capacity C101 is electrically connected with second end of resistance R101, and second end of electric capacity C101 is electrically connected with the second distribution 102.The input of phase inverter 1010 receives the first control signal S101, and the outfan of phase inverter 1010 is in order to produce the second control signal S102.Additionally, the first switch 122 is to be made up of a P-type transistor MP101, and second switch 123 is to be made up of a P-type transistor MP102.
Operationally, the resistance R101 and electric capacity C101 of concatenation is equivalent to a low pass filter.Thereby, when electrostatic pulse occurs in the first distribution 101, control circuit 121 will be equivalent to receive a high-frequency signal, thus the level of the first control signal S101 is switched to low voltage level.Additionally, phase inverter 1010 is by response to having the first control signal S101 of low voltage level, and the level of the second control signal S102 is switched to high voltage level.Relatively, foundation is had the second control signal S102 of high voltage level by the P-type transistor MP101 in the first switch 122, and is in the state being not turned on.Additionally, foundation is had the first control signal S101 of low voltage level by the P-type transistor MP102 in second switch 123, and it is in the state of conducting.On the other hand, when input signal supply to the first distribution 101, control circuit 121 will be equivalent to receive a low frequency signal, thus the level of the first control signal S101 switches to high voltage level, and phase inverter 1010 will produce second control signal S102 with low voltage level according to this.Thereby, the P-type transistor MP101 in the first switch 122 will be in the P-type transistor MP102 in the state of conducting, and second switch 123 and will be in the state being not turned on.
It should be noted that, on reality is applied, with Fig. 6 embodiment similarly, this area has the technical staff of usual knowledge also can be according to design, form the second switch 123 in Figure 10 with a N-type transistor, and add another phase inverter between second end and second switch 123 of resistance R101.In addition, with Fig. 7 embodiment similarly, this area has the technical staff of usual knowledge also can be according to design, between the second end and the second switch 123 of the resistance R101 of Figure 10, concatenate even number of inverters, or concatenate even number of inverters between outfan and first switch 122 of the phase inverter 1010 of Figure 10.Furthermore, with Fig. 9 embodiment similarly, the resistance R101 in control circuit 121 cited by Figure 10 also can be realized by transistor.
For example, Figure 11 is based on the schematic diagram of control circuit of another one exemplary embodiment of the present invention.As shown in figure 11, control circuit 121 includes P-type transistor MP11, N-type transistor MN11 and electric capacity C101.Wherein, P-type transistor MP11 and electric capacity C101 is mutually serially connected between the first distribution 101 and the second distribution 102.N-type transistor MN11 is electrically connected between the grid of P-type transistor MP11 and the second distribution 102, and the grid of N-type transistor MN11 is in order to receive a supply voltage VD.Thereby, when electrostatic pulse occurs in the first distribution 101, the grid of N-type transistor MN11 will be unable to receive supply voltage VD, and the grid of P-type transistor MP11 coupled to the first distribution 101 by the parasitic capacitance between its grid and source electrode, and then N-type transistor MN11 and P-type transistor MP11 is caused all to be in the state being not turned on.Additionally, the P-type transistor MP11 being not turned on equivalence can become a big resistance, and then the level of the first control signal S101 is pulled down to low voltage level.On the other hand, when input signal supply to the first distribution 101, the grid of N-type transistor MN11 can receive supply voltage VD accordingly, and then causes N-type transistor MN11 and P-type transistor MP11 to be all in the state of conducting.Additionally, along with the conducting of P-type transistor MP11, the level of the first control signal S101 is to be lifted to high voltage level.
Figure 12-Figure 16 is based on the circuit diagram of the path switching unit of the yet another exemplary embodiment of the present invention respectively.Referring to shown in Figure 12, control circuit 121 includes P-type transistor MP121, P-type transistor MP122, N-type transistor MN121, N-type transistor MN122 and electric capacity C12.Wherein, the source electrode of P-type transistor MP121 is electrically connected with the first distribution 101.The drain electrode of N-type transistor MN121 is electrically connected with the drain electrode of P-type transistor MP121, and the grid of N-type transistor MN121 is electrically connected with the grid of P-type transistor MP121, and the source electrode of N-type transistor MN121 is electrically connected with the second distribution 102.The source electrode of P-type transistor MP122 is electrically connected with the first distribution 101, the grid of P-type transistor MP122 is electrically connected with the drain electrode of P-type transistor MP121, and the drain electrode of P-type transistor MP122 is in order to produce the first control signal S121 and to be electrically connected with the grid of P-type transistor MP121.The drain electrode of N-type transistor MN122 is electrically connected with the drain electrode of P-type transistor MP122, and the grid of N-type transistor MN122 receives a supply voltage VD, and the source electrode of N-type transistor MN122 is electrically connected with the second distribution 102.Additionally, the first switch 122 is to be made up of a P-type transistor MP123, and second switch 123 is to be made up of N-type transistor MN123.
Operationally, when electrostatic pulse occurs in the first distribution 101, the grid of N-type transistor MN122 will be unable to receive supply voltage VD, and is in the state of suspension joint (floating), and then causes N-type transistor MN122 to turn on.In addition, electrostatic pulse will be coupled to the drain electrode of P-type transistor MP121 by electric capacity C12, and then the level of the first control signal S121 is switched to high voltage level.Furthermore, electrostatic pulse also can be coupled to grid and the grid of N-type transistor MN121 of P-type transistor MP121, and then conducting N-type transistor MN121 by electric capacity C12, and causes P-type transistor MP121 to be in the state being not turned on.Additionally, along with the conducting of N-type transistor MN121, under the state that P-type transistor MP122 will be latched in conducting.On the other hand, there is the first control signal S121 of high voltage level by order to turn on N-type transistor MN123 in second switch 123, and cause the P-type transistor MP123 in the first switch 122 to maintain under the state being not turned on.
When integrated circuit normal operation, input signal will be supplied to the first distribution 101 by weld pad 103.In addition, the grid of N-type transistor MN122 can receive supply voltage VD, and then causes N-type transistor MN122 to be in the state of conducting.Thereby, along with the conducting of N-type transistor MN122, the level of the first control signal S121 will be switched to low voltage level.Additionally, the grid of the grid of P-type transistor MP121 and N-type transistor MN121 will coupled to earth terminal, and then conducting P-type transistor MP121 by N-type transistor MN122 of conducting, and N-type transistor MN121 is caused to be in the state being not turned on.Along with the conducting of P-type transistor MP121, P-type transistor MP122 will be latched under the state being not turned on.Furthermore, there is the first control signal S121 of low voltage level by order to turn on the P-type transistor MP123 in the first switch 122, and cause N-type transistor MN123 in second switch 123 to maintain under the state being not turned on.
Path switching unit cited by Figure 13 is the extension of Figure 12 embodiment.Wherein, being in place of the main difference of Figure 13 with Figure 12 two embodiment, the control circuit 121 in Figure 13 further includes phase inverter 1310～1320.As shown in figure 13, even number of inverters 1310～1320 is serially connected between the drain electrode of P-type transistor MP122 and the first switch 122.In other words, after the first control signal S121 can be via the anti-phase process of even-times, then it is sent to the first switch 122 and second switch 123.Therefore, being sent to the first switch 122 still can be identical with the level of the first control signal S121 with the level of the signal of second switch 123.
Thus, in Figure 13 embodiment, when electrostatic pulse occurs in the first distribution 101, the grid of P-type transistor MP123 and the grid of N-type transistor MN123 still can be respectively received the signal with high voltage level, and then conducting N-type transistor MN123, and P-type transistor MP123 is caused to be in the state being not turned on.In addition, when input signal supply to the first distribution 101, the grid of P-type transistor MP123 and the grid of N-type transistor MN123 still can be respectively received the signal with low voltage level, and then conducting P-type transistor MP123, and cause N-type transistor MN123 to be in the state being not turned on.Thin portion as Figure 13 embodiment operates, similar to Figure 12 embodiment, therefore does not repeats them here.
Path switching unit cited by Figure 14 is also the extension of Figure 12 embodiment.Wherein, being in place of the main difference of Figure 14 with Figure 12 two embodiment, the control circuit 121 in Figure 14 more produces the second control signal S122 by the drain electrode of P-type transistor MP121, and second switch 123 is to be made up of a P-type transistor MP124.As shown in figure 14, the first control signal S121 and the second control signal S122 are two the most anti-phase control signals.Additionally, in Figure 14 embodiment, the first switch 122 is all to be made up of a P-type transistor with second switch 123.Therefore, when P-type transistor MP123 turns on, P-type transistor MP124 will be maintained at the state being not turned on.Relatively, when P-type transistor MP123 is not turned on, P-type transistor MP124 will be maintained at the state of conducting.Thin portion as Figure 14 embodiment operates, similar to Figure 12 embodiment, therefore does not repeats them here.
Path switching unit cited by Figure 15 is the extension of Figure 14 embodiment.Wherein, being in place of the main difference of Figure 15 with Figure 14 two embodiment, the control circuit 121 in Figure 15 further includes phase inverter 1510～1540.As shown in figure 15, even number of inverters 1510～1520 is serially connected between the drain electrode of P-type transistor MP122 and the first switch 122, and even number of inverters 1530～1540 is serially connected between the drain electrode of P-type transistor MP121 and second switch 123.Therefore, the level of the signal being sent to the first switch 122 still can be identical with the level of the first control signal S121, and the level being sent to the signal of second switch 122 still can be identical with the level of the second control signal S122.Thin portion as Figure 15 embodiment operates, similar to Figure 14 embodiment, therefore does not repeats them here.
Path switching unit cited by Figure 16 is also the extension of Figure 14 embodiment.Wherein, being in place of the main difference of Figure 16 with Figure 14 two embodiment, the control circuit 121 in Figure 16 further includes P-type transistor MP161～MP162 and N-type transistor MN161～MN162.P-type transistor MP161 mutually splices with P-type transistor 121, and P-type transistor MP162 mutually splices with P-type transistor 122.Similarly, N-type transistor MN161 is mutually spliced with N-type transistor MN121, and N-type transistor MN162 is mutually spliced with N-type transistor MN122.Thereby, P-type transistor MP161, MP121 and N-type transistor MN161, MN121 will mutually splice between the first distribution 101 and the second distribution 102, and P-type transistor MP162, MP122 and N-type transistor MN162, MN122 will mutually splice between the first distribution 101 and the second distribution 102, and then cause path switching unit 120 to can be applicable in high pressure.
It is noted that on reality is applied, the electric capacity C12 in the control circuit 121 of Figure 12-Figure 16 can be replaced it by parasitic capacitance CP between the grid source electrode of P-type transistor MP121.In other words, this area has the technical staff of usual knowledge and also according to design, can optionally remove the electric capacity C12 in the control circuit 121 of Figure 12-Figure 16.
In sum, the present invention is the current path utilizing path switching unit to control thyristor, to cause thyristor need not pass through the avalanche breakdown electric current between n-well and P-type substrate, so that it may simultaneously turn on its internal PNP transistor and NPN transistor.In other words, when electrostatic discharge event occurs, thyristor will can accelerate its conducting speed under the control of path switching unit, and then contributes to increasing the protective capacities of electrostatic discharge protective equipment.In addition, when electrostatic discharge event occurs, thyristor also can reduce its trigger voltage under the control of path switching unit and keep voltage.Thereby, along with the reduction of trigger voltage, the phenomenon of the uneven conducting of multiple thyristors in electrostatic discharge protective equipment can will be improved.
The above, it it is only presently preferred embodiments of the present invention, not the present invention is made any pro forma restriction, although the present invention is disclosed above with preferred embodiment, but it is not limited to the present invention, any those skilled in the art, in the range of without departing from technical solution of the present invention, when the technology contents of available the disclosure above makes a little change or is modified to the Equivalent embodiments of equivalent variations, in every case it is without departing from technical solution of the present invention content, any simple modification above example made according to the technical spirit of the present invention, equivalent variations and modification, all still fall within the range of technical solution of the present invention.
Claims (25)
1. an electrostatic discharge protective equipment, it is characterised in that comprising:
One thyristor, including one first connecting end, one second connecting end, one first control end and control end with one second, wherein this first connection end second is connected end with this and is electrically connected with one first distribution and one second distribution；And
One path switching unit, it is electrically connected with this first distribution, this first control end and this second control end, wherein when an input signal supply to this first distribution, this path switching unit provides by one first current path of this first distribution to this first control end in response to this input signal, when an electrostatic pulse occurs in this first distribution, this path switching unit provides in response to this electrostatic pulse by one second current path of this first control end to this second control end.
Electrostatic discharge protective equipment the most according to claim 1, it is characterised in that wherein this path switching unit includes:
One first switch, is electrically connected between this first distribution and this first control end；
One second switch, is electrically connected between this first control end and this second control end；And
One control circuit, is electrically connected with this first distribution, this second distribution, this first switch and this second switch,
Wherein, this control circuit is opened this second switch and closes this first switch in response to this electrostatic pulse, to provide this second current path by this second switch, and this control circuit opens this and first switchs and close this second switch, to provide this first current path by this first switch in response to this input signal.
Electrostatic discharge protective equipment the most according to claim 2, it is characterised in that wherein this control circuit includes:
One electric capacity, its first end is electrically connected with this first distribution；And
One resistance, its first end is electrically connected with the second end of this electric capacity, and the second end of this resistance is electrically connected with this second distribution, and wherein this control circuit produces one first control signal by the second end of this electric capacity.
Electrostatic discharge protective equipment the most according to claim 3; it is characterized in that wherein this first switch is made up of a P-type transistor and a N-type transistor respectively with this second switch, and this P-type transistor is controlled by this first control signal with this N-type transistor.
Electrostatic discharge protective equipment the most according to claim 3, it is characterised in that wherein this control circuit further includes a phase inverter, and the input of this phase inverter receives this first control signal, the outfan of this phase inverter is in order to produce one second control signal.
Electrostatic discharge protective equipment the most according to claim 5; it is characterized in that wherein this first switch is made up of one first P-type transistor and one second P-type transistor respectively with this second switch; and this first P-type transistor is controlled by this first control signal of input of this phase inverter, this second P-type transistor is controlled by this second control signal of the outfan of this phase inverter.
Electrostatic discharge protective equipment the most according to claim 2, it is characterised in that wherein this control circuit includes:
One resistance, its first end is electrically connected with this first distribution, and the second end of this resistance is in order to produce one first control signal；
One electric capacity, its first end is electrically connected with the second end of this resistance, and the second end of this electric capacity is electrically connected with this second distribution；And
One phase inverter, its input receives this first control signal, and the outfan of this phase inverter is in order to produce one second control signal.
Electrostatic discharge protective equipment the most according to claim 7; it is characterized in that wherein this first switch is made up of one first P-type transistor and one second P-type transistor respectively with this second switch; and this first P-type transistor is controlled by this second control signal, this second P-type transistor is controlled by this first control signal.
Electrostatic discharge protective equipment the most according to claim 2, it is characterised in that wherein this control circuit includes:
One first P-type transistor, its source electrode is electrically connected with this first distribution；
One first N-type transistor, its drain electrode is electrically connected with the drain electrode of this first P-type transistor, and the grid of this first N-type transistor is electrically connected with the grid of this first P-type transistor, and the source electrode of this first N-type transistor is electrically connected with this second distribution；
One second P-type transistor, its source electrode is electrically connected with this first distribution, the grid of this second P-type transistor is electrically connected with the drain electrode of this first P-type transistor, and the drain electrode of this second P-type transistor is in order to produce one first control signal and to be electrically connected with the grid of this first P-type transistor；And
One second N-type transistor, its drain electrode is electrically connected with the drain electrode of this second P-type transistor, and the grid of this second N-type transistor receives a supply voltage, and the source electrode of this second N-type transistor is electrically connected with this second distribution.
Electrostatic discharge protective equipment the most according to claim 9; it is characterized in that wherein this first switch is made up of a P-type transistor and a N-type transistor respectively with this second switch, and this P-type transistor is controlled by this first control signal with this N-type transistor.
11. electrostatic discharge protective equipments according to claim 9; it is characterized in that the drain electrode of wherein this first P-type transistor is in order to produce one second control signal; this first switch is made up of one the 3rd P-type transistor and one the 4th P-type transistor respectively with this second switch; and the 3rd P-type transistor be controlled by this first control signal, the 4th P-type transistor is controlled by this second control signal.
12. electrostatic discharge protective equipments according to claim 9, it is characterised in that wherein this control circuit further includes an electric capacity, and the first end of this electric capacity is electrically connected with this first distribution, the second end of this electric capacity is electrically connected with the grid of this first P-type transistor.
13. electrostatic discharge protective equipments according to claim 1, it is characterised in that wherein this thyristor includes:
One P-type substrate；
One n-well, is configured in this P-type substrate；
One first P+ type doped region, is configured in this n-well, and is electrically connected with this first connection end；
One the oneth N+ type doped region, is configured in this n-well, and is electrically connected with this first control end；
One second P+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；
One the 2nd N+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；
And
One the 3rd P+ type doped region, is configured in this P-type substrate, and between this first P+ type doped region and the 2nd N+ type doped region, and the 3rd P+ type doped region is electrically connected with this second control end,
Wherein:
Second current path is connected to the 3rd P+ type doped region by a N+ type doped region to be provided.
14. electrostatic discharge protective equipments according to claim 13, it is characterised in that wherein this thyristor further includes one the 3rd N+ type doped region, and the 3rd N+ type doped region part is configured in this n-well.
15. electrostatic discharge protective equipments according to claim 1, it is characterised in that wherein this thyristor includes:
One P-type substrate；
One n-well, is configured in this P-type substrate；
One first P+ type doped region, is configured in this n-well, and is electrically connected with this first connection end；
One the oneth N+ type doped region, is configured in this n-well, and is electrically connected with this first control end；
One second P+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；
One the 2nd N+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；
And
One the 3rd P+ type doped region, part is configured in this n-well, and is electrically connected with this second control end.
16. 1 kinds of electrostatic discharge protective equipments, it is characterised in that comprising:
One thyristor, including one first connecting end, one second connecting end, one first control end and control end with one second, wherein this first connection end second is connected end with this and is electrically connected with one first distribution and one second distribution；And
One path switching unit, including being connected to this first distribution and this first one first switch controlling between end and being connected to this first second switch controlling between end and this second control end, wherein when an input signal supply to this first distribution, this path switching unit is opened this and first is switched and close this second switch, when an electrostatic pulse occurs in this first distribution, this path switching unit is closed this and first is switched and open this second switch.
17. electrostatic discharge protective equipments according to claim 16, it is characterised in that wherein this path switching unit further includes:
One control circuit, it is electrically connected with this first distribution, this second distribution, this first switch and this second switch, and this control circuit opens this second switch and close this first switch in response to this electrostatic pulse, this control circuit is opened this and first is switched and close this second switch in response to this input signal.
18. electrostatic discharge protective equipments according to claim 17, it is characterised in that wherein this control circuit includes:
One electric capacity, its first end is electrically connected with this first distribution；And
One resistance, its first end is electrically connected with the second end of this electric capacity, and the second end of this resistance is electrically connected with this second distribution, and wherein this control circuit produces one first control signal by the second end of this electric capacity.
19. electrostatic discharge protective equipments according to claim 18; it is characterized in that wherein this first switch is made up of a P-type transistor and a N-type transistor respectively with this second switch, and this P-type transistor is controlled by this first control signal with this N-type transistor.
20. electrostatic discharge protective equipments according to claim 17, it is characterised in that wherein this control circuit includes:
One resistance, its first end is electrically connected with this first distribution, and the second end of this resistance is in order to produce one first control signal；
One electric capacity, its first end is electrically connected with the second end of this resistance, and the second end of this electric capacity is electrically connected with this second distribution；And
One phase inverter, its input receives this first control signal, and the outfan of this phase inverter is in order to produce one second control signal.
21. electrostatic discharge protective equipments according to claim 20; it is characterized in that wherein this first switch is made up of one first P-type transistor and one second P-type transistor respectively with this second switch; and this first P-type transistor is controlled by this second control signal, this second P-type transistor is controlled by this first control signal.
22. electrostatic discharge protective equipments according to claim 17, it is characterised in that wherein this control circuit includes:
One first P-type transistor, its source electrode is electrically connected with this first distribution；
One first N-type transistor, its drain electrode is electrically connected with the drain electrode of this first P-type transistor, and the grid of this first N-type transistor is electrically connected with the grid of this first P-type transistor, and the source electrode of this first N-type transistor is electrically connected with this second distribution；
One second P-type transistor, its source electrode is electrically connected with this first distribution, the grid of this second P-type transistor is electrically connected with the drain electrode of this first P-type transistor, and the drain electrode of this second P-type transistor is in order to produce one first control signal and to be electrically connected with the grid of this first P-type transistor；And
One second N-type transistor, its drain electrode is electrically connected with the drain electrode of this second P-type transistor, and the grid of this second N-type transistor receives a supply voltage, and the source electrode of this second N-type transistor is electrically connected with this second distribution.
23. electrostatic discharge protective equipments according to claim 22; it is characterized in that wherein this first switch is made up of a P-type transistor and a N-type transistor respectively with this second switch, and this P-type transistor is controlled by this first control signal with this N-type transistor.
24. electrostatic discharge protective equipments according to claim 16, it is characterised in that wherein this thyristor includes:
One P-type substrate；
One n-well, is configured in this P-type substrate；
One first P+ type doped region, is configured in this n-well, and is electrically connected with this first connection end；
One the oneth N+ type doped region, is configured in this n-well, and is electrically connected with this first control end；
One second P+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；
One the 2nd N+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；
And
One the 3rd P+ type doped region, is configured in this P-type substrate, and between this first P+ type doped region and the 2nd N+ type doped region, and the 3rd P+ type doped region is electrically connected with this second control end.
25. electrostatic discharge protective equipments according to claim 16, it is characterised in that wherein this thyristor includes:
One P-type substrate；
One n-well, is configured in this P-type substrate；
One first P+ type doped region, is configured in this n-well, and is electrically connected with this first connection end；
One the oneth N+ type doped region, is configured in this n-well, and is electrically connected with this first control end；
One second P+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；
One the 2nd N+ type doped region, is configured in this P-type substrate, and is electrically connected with this second connection end；
And
One the 3rd P+ type doped region, part is configured in this n-well, and is electrically connected with this second control end.
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| CN1412846A (en) * | 2001-10-12 | 2003-04-23 | 旺宏电子股份有限公司 | Static discharge protective circuit with function of controlling latchdown |
| CN1464565A (en) * | 2002-06-21 | 2003-12-31 | 旺宏电子股份有限公司 | Silicon controlled rectifier having protective ring control circuit |
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| US7102864B2 (en) * | 2004-06-14 | 2006-09-05 | King Billion Electronics Co., Ltd. | Latch-up-free ESD protection circuit using SCR |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1175795A (en) * | 1996-09-03 | 1998-03-11 | 摩托罗拉公司 | Non-breakdown triggered electrostatic discharge protection circuit for integrated circuit and method therefor |
| CN1412846A (en) * | 2001-10-12 | 2003-04-23 | 旺宏电子股份有限公司 | Static discharge protective circuit with function of controlling latchdown |
| CN1464565A (en) * | 2002-06-21 | 2003-12-31 | 旺宏电子股份有限公司 | Silicon controlled rectifier having protective ring control circuit |
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