CN1464565A - Silicon controlled rectifier having protective ring control circuit - Google Patents
Silicon controlled rectifier having protective ring control circuit Download PDFInfo
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- CN1464565A CN1464565A CN 02124696 CN02124696A CN1464565A CN 1464565 A CN1464565 A CN 1464565A CN 02124696 CN02124696 CN 02124696 CN 02124696 A CN02124696 A CN 02124696A CN 1464565 A CN1464565 A CN 1464565A
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Abstract
The invention provides a first conductive linking correction transversal silicon control rectifier with protective ring control circuit wherein the control circuit, for example the switch control has a first conductive linking correction transversal silicon control rectifier. During the normal operation, the switch uses a low impedance to make the protective ring display short circuit at a high potential and collect electrons for increasing power destroying immune capacity. While under the situation of static discharge, the switch uses a high impedance disabling the actions of the protective ring. The invention can be used to improve the static discharge effect and increase the power destroying immune capacity in the application of high voltage welding pad.
Description
(1) technical field
The relevant a kind of thyristor in the CMOS (Complementary Metal Oxide Semiconductor) transistor unit of the present invention, the particularly relevant horizontal thyristor of a kind of binding correction (PMSCR, bridging modified lateral siliconcontrolled rectifier having first conductivity type).
(2) background technology
Thyristor (SCR, silicon controlled rectifier) is a kind of known semiconductor thyratron (thyristors).Owing to have high impedance status is switched to the low impedance state ability, therefore be widely used on the supply unit.Based on same reason, thyristor suitably can be designed to a kind of very effective ESD protection circuit.
With reference to figure 1; the first conductivity binding horizontal thyristor of correction (PMSCRwith guard ring structure, bridging modified lateral silicon controlledrectifier having first conductivity type with guard ring structure) 110 that has with guard ring is formed in the ground 100.Having the horizontal thyristor 110 of first conductivity binding correction comprises the first light dope wellblock 112 with second conductivity such as N type and has first conductivity such as the second light dope wellblock 114 of P type.One N+ zone 118 is formed in the first light dope wellblock 112 and electric property coupling anode 150, reaches a P+ zone 124 and is formed at the second light dope wellblock 114, and be electrically coupled to negative electrode 160.One P+ zone 120 is formed in the first light dope wellblock 112, and is electrically coupled to anode 150.Then, a N+ zone 122 is formed in the second light dope wellblock 114, and is electrically coupled to negative electrode 160.Then, a N+ zone 126 is formed in the first light dope wellblock 112 and is electrically coupled to anode 150.One P+ zone 128 is formed between the first light dope wellblock 112 and the second light dope wellblock 114, make P+ zone 128 between N+ zone 126 and N+ zone 122, and make that P+ zone 128 is overlapping with the composition surface 116 that is positioned at the first light dope wellblock 112 and the second light dope wellblock 114.
Then, isolated area 130 is formed in the first light dope wellblock 112 and between N+ zone 118 and P+ zone 120.Then, another isolated area 132 is formed in the first light dope wellblock 112 and between P+ zone 120 and N+ zone 126.Then, an isolated area 134 is formed in the first light dope wellblock 112, and between N+ zone 126 and P+ zone 128.Then, an isolated area 136 is formed in the second light dope wellblock 114, and between P+ zone 128 and N+ zone 122.Then, an isolated area 138 is formed at the second light dope wellblock again, and between N+ zone 122 and P+ zone 124.
Link in the horizontal thyristor 110 of correction in first conductivity that has with guard ring; the extra N+ zone 126 that adds is used for as guard ring and collects the electronics that is flow to anode 150 by negative electrode 160, and its guard ring can prevent by overvoltage or the infringement that overvoltage did not produce.Therefore, can improve power and destroy immunocompetence with the horizontal thyristor 110 of first conductivity binding correction.But, very unfortunately, revise horizontal thyristor or have the binding of first conductivity and revise in the horizontal thyristor 110, when thyristor caused, guard ring will be collected electronics and cause the usefulness of its static discharge not good.
With reference to figure 2, be to represent to have first conductivity that has that adds N well protection ring 214 to link the horizontal thyristor 210 of correction.Having the horizontal thyristor 210 of first conductivity binding correction that has that adds N+ well protection ring 214 is formed in the ground 200.Have the horizontal thyristor 210 of first conductivity binding correction that has that adds N+ well protection ring 214 and comprise the first light dope wellblock 212 with second conductivity, the 3rd light dope wellblock 216 that has the second light dope wellblock 214 of second conductivity and have first conductivity.The second light dope wellblock 214 is sent to the electronics of anode 260 by negative electrode 280 with collection as guard ring.Then, N+ zone 224 is positioned at the first light dope wellblock 212 and is electrically coupled to anode 260.Then, P+ district 226 is formed in the first light dope wellblock 212 and is electrically coupled to anode 260.One N+ zone 228 is formed at the 3rd light dope wellblock 216, and is electrically coupled to negative electrode 280.Next, a P+ zone 230 is formed in the 3rd light dope wellblock 216, and is electrically coupled to negative electrode 280.Then, the P+ zone 128 that N+ zone 232 replaces in the horizontal thyristor of binding correction (representing in Fig. 1) 110 with first conductivity with N type guard ring, and be formed in the second light dope wellblock 214 and be electrically coupled to a high potential 270.Then, a P+ zone 234 is substituted in first conductivity that has with N type guard ring and links the N+ zone of revising in the horizontal thyristor 126, and is formed at first composition surface, 218 overlappings between the ground 200 and first wellblock.
Then, an isolated area 250 is formed in the first light dope wellblock 212, and between N+ zone 224 and P+ zone 226.An isolated area 252 is positioned at the first light dope wellblock 212, and between P+ zone 226 and P+ zone 234.An isolated area 254 is overlapping with the composition surface 220 of the part ground 200 and second light doping section 214.Then, an isolated area 256 is formed between the second light dope wellblock 214 and the 3rd light dope wellblock 216, and overlapping with the composition surface 222 of second light dope wellblock 214 partly and the 3rd light dope wellblock 216.Then, an isolated area 258 is formed in the 3rd light dope wellblock 216.As the function of the N guard ring 126 in the horizontal thyristor 110 of the binding correction with first conductivity with N guard ring, N well protection ring 214 is to be used for collecting the electronics that is sent to anode by negative electrode.Promptly when thyristor caused, the power loss immunocompetence can be improved, and when still an identical or different high voltage imposed on N well protection ring 214 with the collection electronics, its static discharge usefulness can be lowered.
Connect among correction horizontal thyristor 110 (as Fig. 1) or 210 (as Fig. 2) in first conductivity that has with guard ring, when anode (150 or 260) current potential rises to the breakdown voltage (Breakdown volrage) on N-well (112 or 212) and P+ (128 or 234) composition surface, this composition surface can produce a large amount of electron hole pair (Electron-hole pairs), wherein electronics can be subjected to high potential attraction and enter anode (150 or 260), and the hole is attracted by electronegative potential and enters negative electrode (160 or 280); When electronics enters anode (150 or 260), can start parasitic PNP two-carrier transistor, thereby to P-well (114 or 216) injected hole; When the hole enters negative electrode (160 or 280), can start parasitic NPN two-carrier transistor, thereby N-well (112 or 212) is injected electronics; Therefore, these two two-carrier transistors can start the other side mutually and produce positive feedback, enter low-impedance keeping (Holding) interval with regard to return suddenly (Snapback) takes place at last.If in static discharge situation (ESD Event), this keeps interval (bypass) static discharge current (ESD current) of can draining effectively.And N+126 or N-well 214 guard rings can be used for collecting electronics, cause PNP two-carrier transistor to start to prevent electron stream from going into anode (150 or 260), and then avoid entering the problem of keeping the district and causing power to destroy; But under the static discharge situation, but keep the interval and cause its static discahrge protection effect variation because of being difficult for entering.
(3) summary of the invention
Main purpose of the present invention is to provide a kind of thyristor with control guard ring; utilize the N type guard ring of control circuit control; make that high impedance/Low ESR is to be decided by static discharge situation (ESD event, electrostatic discharge event).
Another object of the present invention provides a kind of thyristor with control guard ring, and the N type guard ring by control circuit is controlled makes high impedance/Low ESR be decided by normal running, and makes power destruction immunocompetence to improve.
Another purpose of the present invention provides a kind of thyristor with control guard ring, utilizes control circuit control N type guard ring, makes that when thyristor causes control N type guard ring can not had an effect and can not be collected electronics.
A kind of thyristor according to an aspect of the present invention with control guard ring, be characterized in, comprise: one has first conductivity links the horizontal thyristor of correction, the one second light dope wellblock that comprises one first light dope wellblock with one second conductivity and have this first conductivity is positioned at the ground with this first conductivity, wherein this second light dope wellblock is adjacent to this first light dope wellblock, and this second conductivity is opposite with this first conductivity; One first node is electrically coupled to one first heavily doped region with this second conductivity and this second heavily doped region with this first conductivity, and wherein the concentration of each this heavily doped region is higher than each this light dope wellblock; One Section Point is electrically coupled to this and has a quadruple doped region of this first conductivity and the 3rd heavily doped region with this second conductivity, and wherein this Section Point and this first node is electrical opposite; One control guard ring is positioned at this first light dope wellblock; One switch has one first end points and one second end points, and wherein this first end points is electrically coupled to this first heavily doped region and this second end points is electrically coupled to this control guard ring; And a control circuit, be electrically coupled to this switch.
A kind of thyristor according to a further aspect of the invention with control guard ring, be characterized in, comprise: one has first conductivity links the horizontal thyristor of correction, one the 3rd light dope wellblock that comprises one first light dope wellblock with one second conductivity, has one second light dope wellblock of this second conductivity and have this first conductivity is positioned at the ground with this first conductivity, wherein, the 3rd light dope wellblock is adjacent to this second light dope wellblock, and this second conductivity is opposite with this first conductivity; One first node is electrically coupled to one first heavily doped region with one second conductivity and is electrically coupled to this second heavily doped region with this first conductivity, and wherein, the concentration of each this heavily doped region is higher than each this light dope wellblock; One switch has an end points, and wherein this end points is electrically coupled to the 5th heavily doped region; One Section Point is electrically coupled to this switch, and wherein, this Section Point is electrically identical with this first node; One the 3rd node is electrically coupled to the quadruple doped region with this first conductivity and is electrically coupled to the 3rd heavily doped region with this second conductivity, and wherein, the 3rd node should be electrically opposite with this first node and this Section Point; And a control circuit, be electrically coupled to this switch.
Thyristor according to another aspect of the invention with control protection well ring, be characterized in, comprise: a ground has one first conductivity, have one first light dope wellblock of one second conductivity, one the 3rd light dope wellblock that has one second light dope wellblock of this second conductivity and have this first conductivity is positioned at this ground and is adjacent to this second light dope wellblock, wherein, this second conductivity is opposite with this first conductivity; One first heavily doped region with this second conductivity is positioned at this first light dope wellblock; One second heavily doped region with this first conductivity is positioned at this first light dope wellblock; One the 3rd heavily doped region with this second conductivity is positioned at the 3rd light dope wellblock; Quadruple doped region with this first conductivity is positioned at the 3rd light dope wellblock; One the 5th heavily doped region with this second conductivity is positioned at this second light dope wellblock; Sixfold doped region with this first conductivity makes to have this sixfold doped region and partly this first light dope wellblock and this ground are overlapping between this ground and this first light dope wellblock; One first node is electrically coupled to this first heavily doped region and is electrically coupled to this second heavily doped region; One switch has an end points, and wherein, this end points is electrically coupled to the 5th heavily doped region; One Section Point is electrically coupled to this switch; One control circuit is electrically coupled to this switch; And one the 3rd node, be electrically coupled to the 3rd heavily doped region and be electrically coupled to this quadruple doped region.
The invention provides a kind of first conductivity that has and link the horizontal thyristor of correction (PMSCR with controlled guard ring with control guard ring; bridging modified lateral siliconcontrolled rectifier of first conductivity type with controlled guard ring); its guard ring is by switch (switch); control to collect electronics or to make guard ring as MOS (metal-oxide-semiconductor) transistor (MOS transistor, metal oxidesemiconductor transistor) without any effect.When normal running, switch is Low ESR (representing that promptly MOS (metal-oxide-semiconductor) transistor is an opening), and its guard ring presents and is short-circuited to anode or high potential, makes guard ring can collect electronics and can increase power to destroy immunocompetence.In addition, in static discharge situation process, its switch presents high impedance (its MOS (metal-oxide-semiconductor) transistor is a closed condition), and this moment, guard ring was without any effect.Therefore, static discharge usefulness can not be lowered.
For further specifying purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.
(4) description of drawings
Fig. 1 is the schematic cross-section that first conductivity links the horizontal thyristor of correction that has that the expression tradition has N guard ring (N ring);
Fig. 2 is the schematic cross-section that first conductivity links the horizontal thyristor of correction that has that the expression tradition has N well protection ring (N well ring);
Fig. 3 is that first conductivity that has with control N guard ring (controlled N ring) according to the present invention links the schematic cross-section of revising horizontal thyristor;
Fig. 4 is the schematic diagram according to the circuit layout of presentation graphs 3 structures of the present invention;
Fig. 5 is the schematic cross-section that first conductivity links the horizontal thyristor of correction that has that expression according to the present invention has control N well protection ring (controlled N well ring); And
Fig. 6 is the schematic diagram according to the circuit layout of presentation graphs 7 of the present invention.
(5) embodiment
With reference to figure 3 and Fig. 4; Fig. 3 is the first conductivity binding horizontal thyristor of correction (PMSCR of first conductivity type with controlled N guardring structure) 310 that expression has control N type guard ring; it is formed in the ground 300; wherein ground 300 has first conductivity such as P type; and comprise that the first light dope wellblock 312 is formed in the ground 300; and this first light dope wellblock 312 has second conductivity, as the N type.In addition, the second light dope wellblock 314 is formed in the ground 300 and is adjacent to the first light dope wellblock 312, and wherein the second light dope wellblock 314 has first conductivity, and as the P type, and first conductivity and second conductivity is electrical opposite.
Then, first heavily doped region 318 with second conductivity is formed on the first light dope wellblock 312, and is electrically coupled to anode 350.In the present invention, the concentration that is positioned at each heavily doped region of ground 300 all is higher than the concentration of each light dope wellblock.Second heavily doped region 320 with first conductivity is formed in the first light dope wellblock 312, and is electrically coupled to first end points (terminal) 372 of anode 350 and switch (switch) 370.Wherein, switch 370 can be MOS (metal-oxide-semiconductor) transistor (MOStransistor, metal oxide semiconductor transistor), and the function of coming control switch 370 by 380 (in Fig. 4, representing) an of resistor capacitor circuit (RC circuit, resistor-capacitor circuit).Then, the 3rd heavily doped region 322 with second conductivity is formed in the second light dope wellblock 314, and is electrically coupled to negative electrode 360.
Then, the quadruple doped region 324 with first conductivity is formed in the second light dope wellblock 314, and is electrically coupled to negative electrode 360.Next, be formed at the first light dope wellblock 312 as the 5th heavily doped region 326 with second conductivity of guard ring, and be electrically coupled to second end points 374 of switch 370.Then, sixfold doped region 328 with first conductivity is formed between the first light dope wellblock 312 and the second light dope wellblock 314, makes sixfold doped region 328 be overlapped in the composition surface (junction) 316 of the first light dope wellblock 312 and the second light dope wellblock 314.Then, first isolated area 330 can be channel isolating structure (trench or isolation structure) or field oxide region (fieldoxide region) is formed in the first light dope wellblock 312, and between first heavily doped region 318 and second heavily doped region 320.Then, second isolated area 332 is formed in the first light dope wellblock 312, and between second heavily doped region 320 and the 5th heavily doped region 326.Then, the 3rd isolated area 334 is formed in the first light dope wellblock 312, and between the 5th heavily doped region 326 and sixfold doped region 328.Next, the 4th isolated area 336 is formed in the second light dope wellblock 314, and between sixfold doped region 328 and the 3rd heavily doped region 322.Then, the 5th isolated area 338 is formed in the second light dope wellblock 314, and between the 3rd heavily doped region 322 and quadruple doped region 324.
With reference to figure 4, Fig. 4 is the circuit layout schematic diagram of Fig. 3.Reference number 380 is that resistor capacitor circuit (resistor-capacitor circuit), reference number 382 are that resistor and reference number 384 are capacitor among the figure, and wherein this resistor capacitor circuit 380 is as control circuit.Resistor capacitor circuit 380 is electrically coupled to anode 350, switch 370 and negative electrode 360 respectively.In addition, first end points 372 of switch 370 is electrically coupled to 374 of second heavily doped region, 320, the second end points and is electrically coupled to control N guard ring (the 3rd heavily doped region 326), and wherein resistor capacitor circuit 380 is to be used for control switch 370.And this resistance, electric capacity is through suitable selection, so that its toggle speed is between the toggle speed of the toggle speed of normal running and static discharge.When normal running; when bestow a voltage in have the control guard ring have the horizontal thyristor 310 of the first conductivity correction time; if too high current potential is arranged; make the horizontal thyristor 310 of the first conductivity correction that has produce initiation with control guard ring; because the reaction speed of resistor capacitor circuit 380 can be got caught up in the rate of voltage rise of normal running; make the state of switch 370 be rendered as unlatching (on) and be Low ESR; make voltage to pass through MOS (metal-oxide-semiconductor) transistor 370 to control N guard ring 326 via high pressure weld pad (not expression in the drawings), guard ring can be collected by negative electrode 360 and be sent to the electronics of anode 350 to increase power destruction immunocompetence.
In addition, in the static discharge situation,, make switch 370 be high impedance (representing that promptly switch 370 is closing state) because the reaction speed of capacitance resistance circuit 380 can't be caught up with the rate of current of static discharge, make the control guard ring without any effect.Therefore, the usefulness of electrostatic discharge protective can not be lowered.
With reference to figure 5 and Fig. 6, Fig. 5 represents that the horizontal thyristor 410 of first conductivity binding correction that has with control N well protection ring structure is formed in the ground 400.The second light dope wellblock 414 that has the first light dope wellblock 412 of second conductivity and have second conductivity is formed in the ground 400 simultaneously.In addition, the 3rd light dope wellblock 416 with first conductivity is formed in the ground 400, and is adjacent to the second light dope wellblock 414.Then, first heavily doped region 430 with second conductivity is formed at the first light dope wellblock 412, and with first node 460 electric property couplings, wherein first node 460 is an anode.Then, second heavily doped region 432 with first conductivity is formed in the first light dope wellblock 412, and with first node 460 electric property couplings.Next, the 3rd heavily doped region 434 with second conductivity is formed at the 3rd light dope wellblock 416, and with the 3rd node 490 electric property couplings, wherein the 3rd node 490 can be a negative electrode.Then, the quadruple doped region 436 with first conductivity is formed at the 3rd light dope wellblock 416, and with the 3rd node 490 electric property couplings.
Then, the 5th heavily doped region 438 with second conductivity is formed in the second light dope wellblock 414, and be electrically coupled to first end points 480, and first end points 480 is electrically coupled to switch 470, wherein switch 470 is to be electrically coupled to Section Point 482, and this Section Point 482 can be anode or other high potentials.Then, the sixfold doped region 440 with first conductivity is formed between the ground 400 and the first light dope wellblock 412, makes sixfold doped region 440 be overlapped in the composition surface 418 between the first light dope wellblock 412 and ground 400.Then, first isolated area 442 is formed in the first light dope wellblock 412, and between first heavily doped region 430 and second heavily doped region 432.Then, second isolated area 444 is formed in the first light dope wellblock 412, and between second heavily doped region 432 and sixfold doped region 440.Next, the 3rd isolated area 446 is formed between second composition surface 420 of the ground 400 and the second light dope wellblock 414, and between sixfold doped region 440 and the 5th heavily doped region 438.Then, the 4th isolated area 448 is formed on the 3rd composition surface 422 between the second light dope wellblock 414 and the 3rd light dope wellblock 416, and between the 5th heavily doped region 438 and the 3rd heavily doped region 434.Then, the 5th isolated area 450 is formed in the 3rd light dope wellblock 416, and between the 3rd heavily doped region 434 and quadruple doped region 436.
Then, with reference to figure 6, Fig. 6 is that first conductivity that has that has control N well protection ring structure 414 in the presentation graphs 5 links the circuit layout schematic diagram of revising horizontal thyristor 410.Reference number 502 is the resistor in the resistor capacitor circuit 500, and reference number 504 is the capacitor in the resistor capacitor circuit 500.In an embodiment of the present invention, the state (open or close) that resistor capacitor circuit 500 can control switch 470 and the further effect of control N well protection ring 414.In an embodiment of the present invention, switch 470 can be a MOS (metal-oxide-semiconductor) transistor.An end points 480 and the 5th heavily doped region 438 electric property couplings that are positioned at ground of electric property coupling and switch 470 between its switch 470 and the resistor capacitor circuit 500.In addition, resistor capacitor circuit 500 electric property coupling respectively and between first node 460 and the 3rd node 490.
Link the horizontal thyristor 310 of correction as first conductivity that has with control N guard ring structure, when normal running, have having first conductivity binding horizontal correction thyristor 410 and it being initiated of control N well protection ring if there is an excessive voltage to impose on, because the reaction speed of resistor capacitor circuit 500 is got caught up in the rate of voltage rise of normal running, the state of its switch 470 then can be opened and become Low ESR, make high potential to be sent to MOS (metal-oxide-semiconductor) transistor 470 via the high pressure weld pad, be resent to N well protection ring 414, and make N well protection ring 414 to collect to be sent to the electronics of first node 460 and suppress the generation of positive feedback by the 3rd node 490, avoid this thyristor to enter and keep the interval, and then improve power and destroy immunocompetence; If when the static discharge situation; because the toggle speed of resistor capacitor circuit 500 does not catch up with the speed of static discharge; therefore; switch 470 has little time unlatching and presents high impedance status; in other words, N well protection ring can not collected any electronics with regard to presenting quick condition, thereby positive feedback just can not be suppressed; this thyristor just can enter smoothly and keep the interval, therefore can not reduce the protective capacities of static discharge.
In addition, in one embodiment of this invention, first node 460 can be electrically coupled to different voltage respectively with Section Point 482.Therefore, first conductivity that has with N well protection ring links the horizontal thyristor 410 of correction, can control by different applied voltages.In addition, in another embodiment of the present invention, Section Point 482 can with first node 460 electric property couplings, make first node 460 and Section Point 482 be electrically coupled to an applied voltage.Therefore, first conductivity that has with N well protection ring link to be revised horizontal thyristor 410 and can be controlled by a single applied voltage.
Certainly, those of ordinary skill in the art will be appreciated that, above embodiment is used for illustrating the present invention, and be not to be used as limitation of the invention, as long as in connotation scope of the present invention, all will drop in the scope of claims of the present invention variation, the modification of the above embodiment.
Claims (12)
1. the thyristor with control guard ring is characterized in that, comprising:
One has first conductivity links the horizontal thyristor of correction, the one second light dope wellblock that comprises one first light dope wellblock with one second conductivity and have this first conductivity is positioned at the ground with this first conductivity, wherein this second light dope wellblock is adjacent to this first light dope wellblock, and this second conductivity is opposite with this first conductivity;
One first node is electrically coupled to one first heavily doped region with this second conductivity and this second heavily doped region with this first conductivity, and wherein the concentration of each this heavily doped region is higher than each this light dope wellblock;
One Section Point is electrically coupled to this and has a quadruple doped region of this first conductivity and the 3rd heavily doped region with this second conductivity, and wherein this Section Point and this first node is electrical opposite;
One control guard ring is positioned at this first light dope wellblock;
One switch has one first end points and one second end points, and wherein this first end points is electrically coupled to this first heavily doped region and this second end points is electrically coupled to this control guard ring; And
One control circuit is electrically coupled to this switch.
2. the thyristor with control guard ring as claimed in claim 1 is characterized in that this first node is an anode.
3. the thyristor with control guard ring as claimed in claim 1 is characterized in that this Section Point is a negative electrode.
4. the thyristor with control guard ring is characterized in that, comprising:
One has first conductivity links the horizontal thyristor of correction, one the 3rd light dope wellblock that comprises one first light dope wellblock with one second conductivity, has one second light dope wellblock of this second conductivity and have this first conductivity is positioned at the ground with this first conductivity, wherein, the 3rd light dope wellblock is adjacent to this second light dope wellblock, and this second conductivity is opposite with this first conductivity;
One first node is electrically coupled to one first heavily doped region with one second conductivity and is electrically coupled to this second heavily doped region with this first conductivity, and wherein, the concentration of each this heavily doped region is higher than each this light dope wellblock;
One switch has an end points, and wherein this end points is electrically coupled to the 5th heavily doped region;
One Section Point is electrically coupled to this switch, and wherein, this Section Point is electrically identical with this first node;
One the 3rd node is electrically coupled to the quadruple doped region with this first conductivity and is electrically coupled to the 3rd heavily doped region with this second conductivity, and wherein, the 3rd node should be electrically opposite with this first node and this Section Point; And
One control circuit is electrically coupled to this switch.
5. the thyristor with control guard ring as claimed in claim 4 is characterized in that described first node and this Section Point are an anode.
6. the thyristor with control guard ring as claimed in claim 5 is characterized in that described first node is electrically coupled to different applied voltages respectively with this Section Point.
7. the thyristor with control guard ring as claimed in claim 5 is characterized in that described Section Point is electrically coupled to this first node, makes this first node and this Section Point be electrically coupled to an applied voltage.
8. the thyristor with control guard ring as claimed in claim 4 is characterized in that described the 3rd node is a negative electrode.
9. the thyristor with control protection well ring is characterized in that, comprising:
One ground has one first conductivity, have one first light dope wellblock of one second conductivity, one the 3rd light dope wellblock that has one second light dope wellblock of this second conductivity and have this first conductivity is positioned at this ground and is adjacent to this second light dope wellblock, wherein, this second conductivity is opposite with this first conductivity;
One first heavily doped region with this second conductivity is positioned at this first light dope wellblock;
One second heavily doped region with this first conductivity is positioned at this first light dope wellblock;
One the 3rd heavily doped region with this second conductivity is positioned at the 3rd light dope wellblock;
Quadruple doped region with this first conductivity is positioned at the 3rd light dope wellblock;
One the 5th heavily doped region with this second conductivity is positioned at this second light dope wellblock;
Sixfold doped region with this first conductivity makes to have this sixfold doped region and partly this first light dope wellblock and this ground are overlapping between this ground and this first light dope wellblock;
One first node is electrically coupled to this first heavily doped region and is electrically coupled to this second heavily doped region;
One switch has an end points, and wherein, this end points is electrically coupled to the 5th heavily doped region;
One Section Point is electrically coupled to this switch;
One control circuit is electrically coupled to this switch; And
One the 3rd node is electrically coupled to the 3rd heavily doped region and is electrically coupled to this quadruple doped region.
10. the thyristor with control guard ring as claimed in claim 9 is characterized in that, the described second light dope wellblock is a control protection well ring.
11. the thyristor with control guard ring as claimed in claim 9 is characterized in that described control circuit is a resistor capacitor circuit.
12. the thyristor with control guard ring as claimed in claim 11 is characterized in that described control circuit is controlled this switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124696 CN1212670C (en) | 2002-06-21 | 2002-06-21 | Silicon controlled rectifier having protective ring control circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124696 CN1212670C (en) | 2002-06-21 | 2002-06-21 | Silicon controlled rectifier having protective ring control circuit |
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| CN1464565A true CN1464565A (en) | 2003-12-31 |
| CN1212670C CN1212670C (en) | 2005-07-27 |
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| CN 02124696 Expired - Fee Related CN1212670C (en) | 2002-06-21 | 2002-06-21 | Silicon controlled rectifier having protective ring control circuit |
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| CN100372117C (en) * | 2004-04-01 | 2008-02-27 | 上海宏力半导体制造有限公司 | Electrostatic discharging protection device for high-voltage assembly and mfg. method |
| CN100421261C (en) * | 2005-02-25 | 2008-09-24 | 台湾积体电路制造股份有限公司 | Bi-carrier scr circuit and method of forming the same |
| CN101442039B (en) * | 2007-11-22 | 2010-05-26 | 上海华虹Nec电子有限公司 | Structure for reducing trigger voltage of silicon control rectifier |
| CN101916760A (en) * | 2010-05-28 | 2010-12-15 | 上海宏力半导体制造有限公司 | Silicon-controlled electrostatic discharge (ESD) protection structure for effectively avoiding latch-up effect |
| CN101064984B (en) * | 2006-04-29 | 2010-12-22 | 中华映管股份有限公司 | Electrostatic discharge safeguard structure |
| CN102315259A (en) * | 2010-06-29 | 2012-01-11 | 上海宏力半导体制造有限公司 | Parasitic thyristor and electrostatic protection circuit |
| CN103715677A (en) * | 2012-10-09 | 2014-04-09 | 旺宏电子股份有限公司 | Electrostatic discharge protective device |
| CN104766881A (en) * | 2014-01-08 | 2015-07-08 | 旺宏电子股份有限公司 | Semiconductor device |
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2002
- 2002-06-21 CN CN 02124696 patent/CN1212670C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100372117C (en) * | 2004-04-01 | 2008-02-27 | 上海宏力半导体制造有限公司 | Electrostatic discharging protection device for high-voltage assembly and mfg. method |
| CN100421261C (en) * | 2005-02-25 | 2008-09-24 | 台湾积体电路制造股份有限公司 | Bi-carrier scr circuit and method of forming the same |
| CN101064984B (en) * | 2006-04-29 | 2010-12-22 | 中华映管股份有限公司 | Electrostatic discharge safeguard structure |
| CN101442039B (en) * | 2007-11-22 | 2010-05-26 | 上海华虹Nec电子有限公司 | Structure for reducing trigger voltage of silicon control rectifier |
| CN101916760A (en) * | 2010-05-28 | 2010-12-15 | 上海宏力半导体制造有限公司 | Silicon-controlled electrostatic discharge (ESD) protection structure for effectively avoiding latch-up effect |
| CN102315259A (en) * | 2010-06-29 | 2012-01-11 | 上海宏力半导体制造有限公司 | Parasitic thyristor and electrostatic protection circuit |
| CN102315259B (en) * | 2010-06-29 | 2015-02-18 | 上海华虹宏力半导体制造有限公司 | Parasitic thyristor and electrostatic protection circuit |
| CN103715677A (en) * | 2012-10-09 | 2014-04-09 | 旺宏电子股份有限公司 | Electrostatic discharge protective device |
| CN103715677B (en) * | 2012-10-09 | 2016-08-03 | 旺宏电子股份有限公司 | Electrostatic discharge protective equipment |
| CN104766881A (en) * | 2014-01-08 | 2015-07-08 | 旺宏电子股份有限公司 | Semiconductor device |
| CN104766881B (en) * | 2014-01-08 | 2017-11-10 | 旺宏电子股份有限公司 | Semiconductor device |
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| Publication number | Publication date |
|---|---|
| CN1212670C (en) | 2005-07-27 |
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