CN103715309A - New technology for preparing single band difference superlattice thin film solar cell by using pulse laser method - Google Patents
New technology for preparing single band difference superlattice thin film solar cell by using pulse laser method Download PDFInfo
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- CN103715309A CN103715309A CN201410009456.4A CN201410009456A CN103715309A CN 103715309 A CN103715309 A CN 103715309A CN 201410009456 A CN201410009456 A CN 201410009456A CN 103715309 A CN103715309 A CN 103715309A
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- superlattice
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- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000005516 engineering process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 20
- 230000007704 transition Effects 0.000 claims description 7
- 238000004549 pulsed laser deposition Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000013077 target material Substances 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000003362 semiconductor superlattice Substances 0.000 abstract 2
- 238000005204 segregation Methods 0.000 abstract 1
- 229910004613 CdTe Inorganic materials 0.000 description 12
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 6
- 229910007709 ZnTe Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the field of structural design and preparation of novel thin film solar cells. A PLD technology is an advanced technology for preparing multi-layer thin films. According to the new technology for preparing a single band difference superlattice thin film solar cell by using a pulse laser method, 248nmKrF gas pulse laser is used for bombarding compound target materials, a compound crystalline thin film without component segregation can be deposited, and the new technology is an ideal technical method for preparing semiconductor superlattice multi-layer thin films. Along with the proposing of the concept of third generation solar cells and the development of thin film solar cell research, the application of semiconductor superlattice thin films is paid close attention based on a multiple-band-gap semiconductor solar cell model. According to the new technology for preparing the single band difference superlattice thin film solar cell by using the pulse laser method, in order to improve the efficiency of the thin film solar cells, new solar cell absorbing layer materials are developed, technology links are simplified, a suitable single band difference superlattice thin film solar cell structure is designed, and the PLD technical method and thought special for preparing the solar cells of the type are proposed.
Description
Technical field
The invention belongs to the preparing technical field of novel multi-layer thin film solar cell.
Background technology
The third generation solar cell is the battery with high conversion efficiency that is sent to great expectations.Wide band gap semiconducter can improve the short wave response of solar cell as Window layer, but its absorbed layer only has the energy gap of a definite width, and the theoretical transformation efficiency of battery is restricted.1997, the people such as A.Lugue have proposed multi-band gap semiconductor solar array, this class multi-band gap semiconductor has two or more by the very narrow energy gap that can be with (or impurity band) to separate, and each band gap has different width, therefore the light of different wave length is had to good absorption.Afterwards, M.Green further estimates in the theoretical transformation efficiency of this battery and is limited to 86.8%, and lists this type of solar cell in the third generation solar cell.
Multi-band gap absorption approach has indicated direction for preparing high efficiency solar cell, but not only has multi-band gap solar cell could absorb the light of different-waveband.Except multi-band gap, also there is two or more transition in superlattice, also will greatly reduce optical loss.We take the lead in utilizing the advantageous characteristic of single band difference superlattice structure to sunlight absorption, have designed a kind of novel thin film solar cell.
(single offset superlattice is called for short: SOS), refer to that conduction band is poor or valence band is poor equal zero or be approximately zero superlattice so-called single band difference superlattice.Electronics a kind of transition regime from valence band to conduction band only in general semiconductor, and there is two or more transition in electronics in single band difference superlattice.In superlattice, electron transition has various ways, can absorb the sunlight of different-waveband, for solar cell absorbed layer, can reduce optical loss, thereby improves the conversion efficiency of battery.
The II-VI family semiconductor of take is example, according to existing data, can be less than with fracture value have eight pairs more than of 0.15eV.Close to component etc. usually considering from optical loss, just four kinds of super crystal lattice materials just like following table can be used as single band difference superlattice structure.
The single band of table 1 poor (can be with fracture value to be less than 0.15eV) super crystal lattice material
| Material | Valence band is poor | Conduction band is poor |
| CdTe/ZnTe | 0.05eV | 0.77eV |
| ZnSe/CdSe | 0.11eV | 0.86eV |
| ZnSe/Se | 0.76eV | 0.14eV |
| ZnS/CdS | 1.28eV | 0eV |
These four kinds of superlattice three kinds of transition separately corresponding energy when there is no subband is:
1） CdTe/ZnTe ：2.26eV，1.44eV，0.77eV
2） ZnSe/CdSe ：2.67eV，1.70eV，0.86eV
3） ZnSe/Se ：2.67eV，1.77eV，0.14eV
4） ZnS/CdS ：3.70eV，2.42eV，1.28eV
As can be seen here, these four kinds of superlattice have respective absorption to the sunlight of each wave band, are comparatively ideal solar cell absorbed layer materials.
Summary of the invention
Single band difference superlattice can be prepared by the preparation method of conventional superlattice.Comprise magnetron sputtering method, molecular beam epitaxy (MBE), atomic beam epitaxy (ALE), chemical beam epitaxy method (CBE), Metalorganic Chemical Vapor Deposition (MO-CVD) and hot trap epitaxy (HWE) etc.But, require thickness, periodicity strictly to control.Wherein every layer film requires to be as thin as below nanoscale.Now, first we propose to use pulse gas-laser deposition (PLD) technology, by computer control ROTATING SOURCE target, makes the periodically different target of sputter of pulse laser, deposits and have periodic superlattice structure on substrate; And then, develop the efficient film solar cell that contains this class superlattice structure.
Accompanying drawing explanation
A kind of new technology schematic diagram that uses pulsed laser deposition to prepare single band difference superlattice thin film solar cell of Fig. 1.In Fig. 1, having 4 targets, is respectively CdS, ZnS, CdTe and ZnTe target.After pulse laser bombardment target, target material surface is emitted on plumage brightness transparent conducting film glass substrate over there and is deposited film forming.Target can be controlled and be turned target by computer program, and then can on substrate, deposit regular plural layers, and even superlattice film.
Embodiment
The II-VI family semiconductor of take is example, and we have proposed the structure of four pairs of single band difference superlattice materials.We have used 248nm KrF pulse gas-laser deposition (PLD) legal system for CdS/ZnS, CdTe/ZnTe, ZnSe/Se, tetra-kinds of single band difference superlattices of ZnSe/CdSe.
The PLD legal system of take is example for the poor film superlattice of the mono-band of CdS/ZnS, specifically, by rotating high-purity CdS and ZnS target, regulate power, chamber atmosphere air pressure, substrate temperature and the monitoring to thickness of laser, prepare the multilayer laminated single band difference superlattice film (SOS) of required CdS/ZnS.One of them CdS and ZnS rete are considered as one-period, by can obtain different CdS/ZnS single band difference superlattice films to the control of periodicity.
Certainly, can be opened and closed laser shutter and be rotated different targets by computer control, deposition obtains the superlattice film in different-thickness and cycle successively.
Finally, after single band difference superlattice film, then deposit one deck CdTe film, and back electrode (as Au, Ni).Like this, just prepare the novel thin film solar cell that contains single band difference superlattice structure.
The structure of such battery is exemplified as: glass/TCO/
individual layer CdS/ superlattice layer CdS/ZnS-SOS / individual layer CdS/
individual layer CdTe/ superlattice layer CdS/ZnTe-SOS / individual layer CdTe/ back contact/Au.This new construction and the before important difference of common CdS/CdTe thin film solar cell are:
1) in the N-shaped layer of novel battery, contain single band difference superlattice structure CdS/ZnS-SOS;
2) in the p-type layer of novel battery, contain single band difference superlattice structure CdS/ZnTe-SOS;
3) by the sandwich structure that contains superlattice film (individual layer CdS/ superlattice layer CdS/ZnS-SOS/ individual layer CdS), replaced conventional n-CdS film;
4) by the sandwich structure that contains superlattice film (individual layer CdTe/ superlattice layer CdTe/ZnTe-SOS/ individual layer CdTe), replaced conventional p-CdTe film.
Claims (7)
1. the feature of this patent is to utilize pulsed laser deposition (PLD) technology, prepares novel single band difference superlattice thin film solar cell, comprising:
The structure of single band difference superlattice;
The material of single band difference superlattice;
The PLD technology of single band difference superlattice thin film solar cell is prepared details.
2. as claimed in claim 1, it is characterized in that single band difference superlattice membrane structure is multiply periodic laminated construction, single band difference superlattice can be divided into two large classes, and a kind of is Δ E
v≈ 0, and another kind is Δ E
c≈ 0, and in the superlattice of this class formation, carrier transition may exist 1～3 kind of mode.
3. as claimed in claim 1, it is characterized in that single band difference superlattice film, by meeting the semiconductive thin film alternating deposit that can be less than 0.15eV with fracture value, form.
4. as claimed in claim 1, it is characterized in that finding out the material meeting described in claim 2,3, carry out structural design.
5. as claimed in claim 1, it is characterized in that emphasis regulation and control superlattice each cycle film thickness, be as thin as below nanoscale, and meet band structure and the transition regime in claim 2.
6. as claimed in claim 1, it is characterized in that the advantageous characteristic of utilizing single band difference superlattice structure to absorb sunlight, a kind of novel thin film solar cell of designing, the p-type thin layer/back electrode (glass/TCO film/n-SOS/p-SOS/electrode) of the N-shaped thin layer of glass/transparent conductive film/contain single band difference superlattice structure/contain single band difference superlattice structure of take is trunk structure.
7. as claimed in claim 1, it is characterized in that using PLD technology, by turning target sputter mode, the time that computer control baffle plate blocks, and then control the parameters such as the thickness of every layer film and cycle, prepare the novel thin film solar cell that contains single band difference superlattice structure.
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| CN201410009456.4A CN103715309A (en) | 2014-01-09 | 2014-01-09 | New technology for preparing single band difference superlattice thin film solar cell by using pulse laser method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845759A (en) * | 2016-04-15 | 2016-08-10 | 武汉锦隆工程技术有限公司 | Solar cell and solar barricade with anti-collision alarm function |
| CN111430474A (en) * | 2020-04-23 | 2020-07-17 | 成都先锋材料有限公司 | Thin film, solar cell, and preparation method and device thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101831619A (en) * | 2010-05-28 | 2010-09-15 | 浙江大学 | Nano-crystalline Mg-Ni multilayer composite film and preparation method thereof |
| CN102931275A (en) * | 2012-10-29 | 2013-02-13 | 四川大学 | Novel thin film solar cell with superlattice structure |
| CN103060753A (en) * | 2013-01-24 | 2013-04-24 | 扬州大学 | Process method for preparing hexagonal phase ZnS film at low temperature |
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2014
- 2014-01-09 CN CN201410009456.4A patent/CN103715309A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101831619A (en) * | 2010-05-28 | 2010-09-15 | 浙江大学 | Nano-crystalline Mg-Ni multilayer composite film and preparation method thereof |
| CN102931275A (en) * | 2012-10-29 | 2013-02-13 | 四川大学 | Novel thin film solar cell with superlattice structure |
| CN103060753A (en) * | 2013-01-24 | 2013-04-24 | 扬州大学 | Process method for preparing hexagonal phase ZnS film at low temperature |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845759A (en) * | 2016-04-15 | 2016-08-10 | 武汉锦隆工程技术有限公司 | Solar cell and solar barricade with anti-collision alarm function |
| CN111430474A (en) * | 2020-04-23 | 2020-07-17 | 成都先锋材料有限公司 | Thin film, solar cell, and preparation method and device thereof |
| CN111430474B (en) * | 2020-04-23 | 2021-12-28 | 成都先锋材料有限公司 | Thin film, solar cell, and preparation method and device thereof |
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Application publication date: 20140409 |