CN103715121B - A kind of wafer load method - Google Patents
A kind of wafer load method Download PDFInfo
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- CN103715121B CN103715121B CN201210379381.XA CN201210379381A CN103715121B CN 103715121 B CN103715121 B CN 103715121B CN 201210379381 A CN201210379381 A CN 201210379381A CN 103715121 B CN103715121 B CN 103715121B
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- wafer
- mechanical hand
- electrostatic chuck
- load method
- sheet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The stowage of a kind of wafer, it is adaptable to slim wafer.This installation method is strengthened by the upward stroke taking mechanical hand in sheet process and the rate of climb slows down, make to clash into, during mechanical hand contact wafer, the damage produced to reduce, strengthen the electrostatic chuck electrostatic adsorption force when fixing wafer simultaneously, ensure that in technical process, wafer will not produce displacement, make the whole wafer process produced damage in loading process reduce, and then improve the quality of technique.
Description
Technical field
The present invention relates to a kind of production process of semiconductor, specifically, be a kind of wafer load method in thin slice technique.
Background technology
In fabrication of semiconductor device, in order to obtain good mechanical performance, electrical property, and the needs of subsequent machining technology, it is generally required to product sheet is thinning, the thickness after thinning is generally at 200-400 microns.And for some special semiconductor device, especially some power semiconductors, in order to obtain thinner chip, or in order to meet the requirement of more excellent electrical property, need to subtract thinner by the thickness of product sheet, such as reach less than 200 microns even up to less than 100 microns, be namely processed into so-called superthin section, and be also performed to the processes such as ion implanting, dry etching after thinning.
Before carrying out these processing technique, it usually needs by wafer from the processing chamber of device disk support.Fig. 1 and Fig. 2 is the structural representation of a kind of conventional mechanical hand and processing chamber respectively.As it is shown in figure 1, mechanical hand 8 includes the load bearing arm 7 of carrying wafer, and some pores that distribution is on a robotic arm, just there is air-channel system inside this mechanical hand, be connected on an air valve, bleeding of through hole air valve can form negative pressure on pore.When taking sheet, mechanical hand 8 is moved to and below wafer, starts air extractor, by wafer adsorption on load bearing arm 7.Then mobile manipulator, by wafer load to processing chamber as shown in Figure 2.Wherein this processing chamber includes the state space 2 that surrounded by chamber arm 1, it is arranged on the electrostatic chuck (E-chuck) 3 in this state space 2, the electrode on surface is included at this electrostatic chuck 3, multiple pores, inside is connected to the cooling gas circuit on the plurality of pore, it is connected to the intake valve 11 in this cooling gas circuit and extraction valve 10, is connected to the cooling gas He source 4 on intake valve, and the D/C power portion 12 for Electrostatic Absorption is connected on electrostatic chuck 3 via RF wave filter 5.
But just take sheet and fixed mechanism shown in Fig. 1 and Fig. 2, when for wafer, it may appear that following problem:
First: mechanical hand 8 is in taking sheet engineering, it is necessary to first going deep into disk support from the lower section of wafer, moving contact target wafer sheet, adsorbs then up.Owing to mechanical hand is in uphill process, stroke is too short and excessive velocities, causes inertia excessive and still has the rate of climb in the moment of contact wafer, is so easily caused the breakage of thin wafer；
Second: when on wafer device to electrostatic chuck 3, the parameter of existing electrostatic chuck 3 is all design with the wafer of stock size, not for extra-thin wafer, therefore adsorption strength is easily produced inadequate, wafer is shifted over when processes and makes technique failure, cause waste paper.
It is therefore desirable to propose to improve to existing wafer load technique, with the damage overcoming slim wafer to be formed in taking sheet and load process.
Summary of the invention
In view of this, the present invention proposes a kind of wafer load method in semiconducter process, and the method is it can be avoided that the damage that produces in taking sheet and fixing process of wafer, thus providing the quality of semiconducter process.
According to a kind of wafer load method that the purpose of the present invention proposes, including step:
According to disk support model, what set mechanical hand takes sheet parameter, and this parameter includes upward stroke and the rate of climb of mechanical hand, and wherein upward stroke is more than the half of adjacent wafers spacing in disk support；
Run control mechanical hand with the described sheet parameter that takes, wafer is transferred to electrostatic chuck from wafer support；
Open clamping voltage, power is increased to 1500w-1900w, makes wafer be fixed on electrostatic chuck；
With above-mentioned power to after wafer absorption 750s, this wafer is implemented semiconducter process；
After above-mentioned semiconducter process terminates, control electrostatic chuck and discharge, to eliminate the absorption affinity to wafer；
Take out wafer.
Preferably, the upward stroke of described mechanical hand is less than the 3/4 of upper and lower wafer pitch.
Preferably, the rate of climb of described mechanical hand is 1cm/s.
Preferably, the power of described electrostatic chuck is 1800w.
Preferably, the step that wafer rear is passed into cooling He can be included further.
Preferably, the air pressure of described He is 1.2 millibars.
Preferably, described discharge time was more than 60 seconds.
The present invention by semiconductor processing to wafer take sheet and the stowage such as fixing improves, the upward stroke taking mechanical hand in sheet process is strengthened and speed slows down, make to clash into, during mechanical hand contact wafer, the damage produced to reduce, strengthen the electrostatic chuck electrostatic adsorption force when fixing wafer simultaneously, ensure that in technical process, wafer will not produce displacement, make the whole wafer process produced damage in loading process reduce, and then improve the quality of technique.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is existing robot manipulator structure schematic diagram；
Fig. 2 is existing electrostatic suction cup structure schematic diagram；
Fig. 3 is the schematic flow sheet of the wafer load method of the present invention.
Detailed description of the invention
As described in the background art, existing wafer takes sheet and fixing technique, not being specifically designed for slim wafer and carry out independent design, all of technological parameter is all be operated with the specification that conventional wafer sheet is identical with step, it is easy to cause the damage of slim wafer.
Therefore it is an object of the invention to the slim wafer stowage proposing in a kind of semiconductor fabrication process, particularly in the such as technical process such as ion implanting, plasma etching, it is necessary to use electrostatic chuck and carry out the technique that wafer is fixing.By method of the invention, it is possible to effectively avoid the damage that slim wafer produces in taking sheet and load process.
One improvement of the present invention is in that, take in sheet process what mechanical hand carried out wafer, increase the upward stroke of mechanical hand, and slow down the speed that mechanical hand rises simultaneously, make inertia mechanically reduce, guarantee that when contact wafer wafer will not produce because of the shock of mechanical hand to damage.
Another improvement of the present invention is in that, after wafer is loaded into electrostatic chuck by mechanical hand, strengthen the electrostatic power of electrostatic chuck, the electrostatic adsorption force making generation is sufficiently large, strengthen the time of Electrostatic Absorption simultaneously, guarantee that the fixing intensity of wafer will not produce displacement in technical process, thus avoiding wafer to form damage in the course of processing.
Refer to the schematic flow sheet that Fig. 3, Fig. 3 are the wafer stowages of the present invention.As it can be seen, the wafer stowage of the present invention comprises the steps:
S1: according to disk support model, what set mechanical hand takes sheet parameter, and this parameter includes upward stroke and the rate of climb of mechanical hand, wherein upward stroke more than in disk support the half of spacing between adjacent two wafer.
S2: control mechanical hand and run with the sheet parameter that takes in step S1, wafer is transferred to electrostatic chuck from wafer support.
S3: open clamping voltage, power is increased to 1500w-1900w, makes wafer be fixed on electrostatic chuck.
S4: with above-mentioned power to after wafer absorption 750s, this wafer is implemented semiconductor processing technique.
S5: after above-mentioned semiconducter process terminates, controls electrostatic chuck and discharges, and to eliminate the absorption affinity to wafer, this discharge time is more than 60s.
S6: take out wafer.
In above-mentioned steps S3 and S4 process, the step that wafer rear is passed into cooling He can be included further.This step can help wafer at some heat processing techniques, such as etching technics etc., it is to avoid the problem of the crystal column surface device failure caused because of high temperature.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
Owing to the hardware used in implementation process is changed by the present invention, so mechanical hand used in the present invention and electrostatic chuck refer to Fig. 1 and Fig. 2.
Firstly, it is necessary to take sheet parameter according to what the gauge size of wafer support determined mechanical hand.By the impact of the size of wafer own, such as 4 chi wafers and 8 chi wafers, the disk support placing wafer is also generally of various sizes of specification, and when polylith wafer is on disk support, is with parallel up and down and there is the form arrangement of certain spacing distance each other.When mechanical hand 8 needs to take sheet, first load bearing arm 7 is extend into the lower section of target wafer.In existing technique, taking the sheet time in order to what reduce mechanical hand, this mechanical hand 8 distance (i.e. upward stroke) below wafer is typically smaller than the half of upper and lower wafer pitch.And in the present invention, the load bearing arm 7 of this mechanical hand 8 then needs to move to the place below wafer more than upper and lower wafer pitch half, just begins to ramp up.So just considerably increase the upward stroke of mechanical hand so that the driving device of this mechanical hand has good buffer distance, reduce that bring because of the inertia of mechanical hand and between wafer collision momentum.
When concrete this mechanical hand 8 of control reaches target location, it is possible to first allow the load bearing arm of this mechanical hand extend into any position below wafer, then measure now with whether the distance of wafer reaches desired stroke distances according to a measurement apparatus.If it has been reached, then carry out rising control；If also do not reached, then control this mechanical hand and decline, until it reaches till desired stroke distances.
Can certainly control that this mechanical hand is disposable reaches desired stroke distances, then again the load bearing arm 7 of mechanical hand 8 be extend into below wafer.
It is pointed out that this mechanical hand stroke distances below wafer not can exceed that the spacing between two panels wafer, otherwise can affect the load ability of disk support.More preferably, this mechanical hand is positioned at the distance below wafer less than the 3/4 of upper and lower wafer pitch.The space stayed can ensure that mechanical hand will not touch lower section wafer.The disk support being 4cm for a kind of upper and lower wafer pitch.Mechanical hand 8 extend into the distance below wafer preferably between 2cm to 3cm.
In mechanical hand 8 uphill process, need to move with slower speed, this speed is preferably such that the momentum of mechanical hand 8 generation and is not enough to damage wafer, accordingly even when under the impact of inertia or journey error, mechanical hand 8 contact wafer in also with certain momentum, it is also possible to avoid wafer to damage because of the shock of mechanical hand.More preferably, this velocity ratio 1cm/s in this way.More preferably, before mechanical hand contacts wafer, the drive motor of mechanical hand just can be braked by arrestment mechanism, and to guarantee mechanical hand contact wafer in a flash, speed is minimum.
After mechanical hand 8 contacts wafer, the outside vacuum extractor being connected on mechanical hand 8 comes into operation, and is distributed in the stomatal limiting value negative pressure on mechanical hand 8, and wafer is absorbed and fixed on mechanical hand 8.
Then wafer is transferred to the electrostatic chuck 3 of processing chamber 2 by this mechanical hand 8 from disk support.After electrostatic chuck 3 detects wafer, start D/C power portion 12, produce electrostatic adsorption force, fix this wafer.In the present invention, it is proposed that the Electrostatic Absorption power bigger than the Electrostatic Absorption power (1200W) of common wafer, because slim wafer, the intrinsic warpage ratio of itself is more serious.In the situation that electrostatic adsorption force is inadequate, wafer cannot fit in the surface of electrostatic chuck 3, so can have a strong impact on fixing intensity, in technical process, when such as accepting plasma bombardment, it is easy to produces displacement, and then causes scrapping of wafer.Therefore strengthen Electrostatic Absorption power, enable wafer to be close to the surface of electrostatic chuck 3, the success rate of wafer process is had bigger help.But it is pointed out that excessive electrostatic potential also results in the damage of crystal column surface device, it is therefore desirable under the electrostatic potential that wafer can bear, improve this Electrostatic Absorption power, in the present invention, the power in D/C power portion 12 is 1500W to 1900W, more preferably, it is possible to be set as 1800W.
Additionally, the fixing effect also functioning to key that the time of Electrostatic Absorption is to wafer.In existing technology, after wafer 20S by electrostatic adsorption, begin to be processed technique.In this case the displacement problem easily producing wafer adsorption unstable and to cause, in the present invention, this adsorption time is promoted to 750S, substantially increases the stability of wafer adsorption, technique is just started when guaranteeing so that the process yields of wafer promotes further wafer is effectively fixed.
In being processed technical process, He source 4 to wafer rear logical cooling He gas, and is undertaken following bad by intake valve 11 by extraction valve 10.The effect of back of the body He is possible to prevent the device failure that crystal column surface causes because temperature is too high.But back of the body He can produce impact to wafer absorption on electrostatic chuck 3 is fixing again simultaneously.Under existing thick wafer process, the air pressure of back of the body He reaches 1.8 millibars.But for slim wafer, the gas flow ratio general wafer needed for cooling is little.Therefore in the present invention, control, at 1.2 millibars, namely to realize the cooling to wafer by the air pressure of back of the body He, make again gas that the impact of Electrostatic Absorption intensity is reduced further, it is possible to be effectively improved the quality of technique.
After technique terminates, taking out before wafer, in addition it is also necessary to the electrostatic on electrostatic chuck 3 is carried out discharge process, controls discharge time more than 60 seconds, with Electro-static Driven Comb completely till.More preferably, control discharge time at 120 seconds, it can be ensured that the electrostatic on electrostatic chuck 3 is released completely.So when taking sheet, because of the absorption of residual static electricity, and the damage to wafer will not occur.
In sum, the present invention by semiconductor processing to wafer take sheet and the stowage such as fixing improves, the upward stroke taking mechanical hand in sheet process is strengthened and speed slows down, make to clash into, during mechanical hand contact wafer, the damage produced to reduce, strengthen the electrostatic chuck electrostatic adsorption force when fixing wafer simultaneously, ensure that in technical process, wafer will not produce displacement, make the whole wafer process produced damage in loading process reduce, and then improve the quality of technique.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.The multiple amendment of these embodiments be will be apparent from for those skilled in the art, and generic principles defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention is not intended to be limited to the embodiments shown herein, and is to fit to the widest scope consistent with principles disclosed herein and features of novelty.
Claims (7)
1. a wafer load method, it is characterised in that include step:
According to disk support model, what set mechanical hand takes sheet parameter, and this parameter includes upward stroke and the rate of climb of mechanical hand, and wherein upward stroke is more than the half of adjacent wafers spacing in disk support；
Run control mechanical hand with the described sheet parameter that takes, wafer is transferred to electrostatic chuck from wafer support；
Open clamping voltage, power is increased to 1500w-1900w, makes wafer be fixed on electrostatic chuck；
With above-mentioned power to after wafer absorption 750s, this wafer is implemented semiconducter process；
After above-mentioned semiconducter process terminates, control electrostatic chuck and discharge, to eliminate the absorption affinity to wafer；
Take out wafer.
2. wafer load method as claimed in claim 1, it is characterised in that: the upward stroke of described mechanical hand is less than the 3/4 of upper and lower wafer pitch.
3. wafer load method as claimed in claim 1, it is characterised in that: the rate of climb of described mechanical hand is 1cm/s.
4. wafer load method as claimed in claim 1, it is characterised in that: the power of described electrostatic chuck is 1800w.
5. wafer load method as claimed in claim 1, it is characterised in that: farther include wafer rear is passed into the step of cooling He.
6. wafer load method as claimed in claim 5, it is characterised in that: the air pressure of described He is 1.2 millibars.
7. wafer load method as claimed in claim 1, it is characterised in that: described discharge time was more than 60 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210379381.XA CN103715121B (en) | 2012-09-29 | 2012-09-29 | A kind of wafer load method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210379381.XA CN103715121B (en) | 2012-09-29 | 2012-09-29 | A kind of wafer load method |
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| CN103715121A CN103715121A (en) | 2014-04-09 |
| CN103715121B true CN103715121B (en) | 2016-07-06 |
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| CN107546170B (en) * | 2016-06-29 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Method and device for setting electrostatic chuck voltage and semiconductor processing equipment |
| CN108962794B (en) * | 2018-07-20 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Needle lifting method and thimble lifting device applying same |
| CN110416132A (en) * | 2019-08-20 | 2019-11-05 | 上海新傲科技股份有限公司 | The method of load in semiconductor stripping technology |
| CN111799201B (en) * | 2020-07-14 | 2023-08-01 | 苏州太阳井新能源有限公司 | Feeding and discharging buffer memory mechanism with environment control |
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| JP2825616B2 (en) * | 1990-05-21 | 1998-11-18 | 東京エレクトロン株式会社 | Plate transfer device |
| JP2811238B2 (en) * | 1991-04-08 | 1998-10-15 | 大日本スクリーン製造株式会社 | Substrate take-out device |
| FR2902235B1 (en) * | 2006-06-09 | 2008-10-31 | Alcatel Sa | DEVICE FOR TRANSPORTING, STORING AND TRANSFERRING SUBSTRATES |
| KR20100069893A (en) * | 2008-12-17 | 2010-06-25 | 주식회사 동부하이텍 | Apparatus and method for transferring wafer |
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Effective date of registration: 20171214 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |