CN103715111B - For connecting copper-rhodium alloy line of semiconductor device - Google Patents

For connecting copper-rhodium alloy line of semiconductor device Download PDF

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Publication number
CN103715111B
CN103715111B CN201310271669.XA CN201310271669A CN103715111B CN 103715111 B CN103715111 B CN 103715111B CN 201310271669 A CN201310271669 A CN 201310271669A CN 103715111 B CN103715111 B CN 103715111B
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China
Prior art keywords
copper
rhodium
quality
line
semiconductor device
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CN103715111A (en
Inventor
天野裕之
三上道孝
冈崎纯一
滨本拓也
中岛伸一郎
山下勉
三苫修一
小野甲介
刘斌
执行裕之
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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  • Engineering & Computer Science (AREA)
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Abstract

The invention provides the copper-rhodium alloy line for connecting semiconductor device. [object] improvement copper alloy ball bonding line, the aluminium while making to be limited in ultrasonic wave joint splashes and tilts, and improves the quality of the zygosity in the time that secondary engages. [means of dealing with problems] are in initial copper (Cu) and the metallic matrix of amount for the rhodium (Rh) of 0.1-1.5 quality % more than 99.995 quality % comprising purity, the amount of dissolving nonmetalloid is the sulphur (S) of 1.0-10 quality ppm and the oxygen (O) that amount is 10-150 quality ppm, can meltage be also the phosphorus (P) of 1-10 quality ppm subsequently. Rhodium in metal plays and limits the effect of sulphur at ball surface segregation, therefore controls its resistance to vibration, and acts synergistically with the oxygen dissolving, and rhodium has limited the active of S and therefore improved the line quality aspect inclination and secondary zygosity.

Description

For connecting copper-rhodium alloy line of semiconductor device
Technical field
The present invention relates to for by having used the mixing joint method of ultrasonic wave and hot pressing at semiconductorOn device, pad (pad) electrode is connected to the copper alloy wire on outer electrode, particularly copper-poor rhodiumAlloy wire, to be wherein dissolved in purity be in copper (Cu) more than 99.995 quality % to rhodium.
Background technology
Along with the rise of price of gold lattice in recent years, copper alloy wire is as the substitute of 4N-proof gold alloy wire,Regaining more concern.
Be generally used for engaging the use ultrasonic wave of copper alloy wire and the mixing joint method of hot pressing by belowStep forms: keeping in non-oxide atmosphere, as in nitrogen atmosphere and mixed the nitrogen gas of hydrogenIn atmosphere, by electric arc heated, output is heated one end of copper alloy bonding wire and is melted on aluminum pad;Molten ball is made by surface tension in end at this line; Subsequently by carbide tool by under this thread ballBe pressed on the electrode of the semiconductor device that is heated to 150-300 degree Celsius, thereby bear by pressurizationLotus and copper alloy wire and aluminum pad being bonded together from the ultrasonic vibrational energy of carbide tool. SuperThe effect that sound wave engages is the distortion that has promoted copper alloy wire, thereby makes bonding area become large, and shortEntered the destruction that the thickness forming is the oxidation film of 50-100 nanometer (nm) on copper alloy wire surfaceWith remove, thereby below surface metallic atom is exposed as copper (Cu), and therefore online and engageIn interface between opposite face between pad, cause Plastic Flow, this has played to increase and has closely engagedThe effect of the area at interface, and therefore obtained between the atom between two objects and engage.
Conventionally, there is the copper alloy wire that contains the copper in solid solution state (Cu) and noble metal,Copper alloy wire as mentioned below; But, due to the price of noble metal costliness, make the latter's interpolationAmount is restricted. As a result of, the logical snperoxiaized skin covering of the surface of the character of copper (Cu) matrix itself manifestsCome, and between a joint aging time, in the time that ultrasonic wave engages, in the time thread ball being engaged by pressure,Because there is work hardening during the Plastic Flow of thread ball, thus resistance to vibration raising, and if shouldIt is really up to the mark that ball becomes, and chip rupture may occur, and when carrying out modified heat treatment to avoid chip at high temperatureWhile breaking, the static strength of copper alloy becomes too low, and as a result of, this line may not shapeBecome the adapter ring (loop) of (describe) correct forming.
Therefore, the problem of conventional copper alloy is, can not keep its constant static strength sameTime, resistance to vibration and the required pliability (toughness) of closing line of maintenance balance. Another problem is,In the time that secondary engages, due to the inhomogeneities of oxide concentration, gained is can zygosity poor.
In Japanese Patent Application Publication S61-020693 (disclosing 1 hereinafter referred to as IP), this is describedAn example of Albatra metal-line. Nominally it contains noble metal as gold (Au), but in fact, with0.001-2 % by weight adds magnesium (Mg), hafnium (Hf) or other base metal element in copper, thereby " H,O, N and C are fixed in alloy, and have limited H thus2、O2、N2Generation with CO gas "(IP discloses the hurdle, upper right of 1 the 2nd page). But, when the content of base metal element amounts up to percentageWhen magnitude, it is too high that hardness becomes, and molten ball is tended to really up to the mark and can not avoid chip rupture.
There is again Japanese Patent Application Publication 2008-085320 (disclosing 2 hereinafter referred to as IP). It relates toAnd for the copper alloy bonding wire of semiconductor device, it is characterized in that, comprise highly purified copper, described inCopper contains at least one in Mg that total amount is 10-700 quality ppm and P, total amount is 10-5, and 000At least one in Ag, Pd, Pt and the Au of quality ppm and amount are 6-30 quality ppmOxygen (IP discloses 2 claim 2), and the object of this invention is, by being controlled at thread ball surfaceThe oxygen of the oxidation film of upper formation, improves shape and the bond strength of molten ball. But, because pass throughSoftening, reduce hardness and static strength, improve ball bond shape and bond strength, occurred withIdentical problem mentioned above, that is, the adapter ring of gained can not correctly formalize.
As from above-mentioned example, conventional copper alloy bonding wire is the gold by adding relative a small amount ofBelong to the result that unit usually improves the effort of the Joint Properties of copper (Cu) closing line.
As a result of, although reduced the static strength of closing line, it is so high that resistance to vibration becomes,Even if make not occur chip rupture during ball bonding, but there is " aluminium splash (splash) ", i.e. aluminiumThe distortion of pad and avulsion, and be also accompanied by the reduction of static strength, run-off the straight (leaning),Therefore do not reach the pliability (toughness) of the required balance of closing line that uses free air ball (FAB). AttachedBand is mentioned, conventionally in the nitrogen atmosphere that has mixed hydrogen, forms free air ball (FAB), but exists once in a whileIn the inert atmosphere that comprises 100% nitrogen etc., form it.
Prior art is open
[IP is open]
[IP discloses 1]
(Japan) Patent Application Publication S61-020693 (1986)
(Japan) Patent Application Publication 2008-085320
Summary of the invention
The problem solving is sought in invention
The object of the invention is to, a kind of copper alloy bonding wire is provided, its in the time once engaging when byUltrasonic wave does not produce when the molten ball of copper alloy wire is engaged to aluminum pad that aluminium splashes, chip rupture or inclineTiltedly, and between secondary joint aging time, can form the outstanding secondary with high zygosity and engage.
The means of dealing with problems
The present inventor has noted because it is still even compared with many other precious metal elementsHigh price former thereby be not yet considered to useful rhodium (Rh), and they attempt by by copper (Cu) withA small amount of rhodium alloy solves the problems referred to above. In addition, prepare in the scheme of Cu-Rh alloy wire at this,They have also noted as the impurity of copper (Cu) and sulphur (S) out in the cold, and they are final proposes oneFind, why sulphur (S) causes during ball bonding that aluminium splashes and the reason of chip rupture is, sulphur (S)During the formation of molten ball, be separated in the surface of copper (Cu) ball, and formed there high concentration regionTerritory, and when ball subsides (collapse) by ball bonding, adding of Plastic Flow, has been stood to follow in this regionWork sclerosis, has therefore improved usually said resistance to vibration, and has increased whereby pad electrode and coreLoad on sheet.
On the other hand, sulphur itself contributes to limit work hardening, unless its concentration is not high.
And in the research of Cu-Rh alloy, inventor has also noted oxygen (O), it is to subsidingThe formation of ball during the resistance to vibration of copper have effect.
Therefore, for fear of the segregation of sulphur (S) in copper (Cu) surface in the time that molten ball forms, Ta MentongCross first the nonmetalloid oxygen (O) of metallic element rhodium (Rh) and scheduled volume is dissolved in copper (Cu), willSulphur is fixed in copper (Cu) matrix. As a result of, even engage molten by the mixing of ultrasonic wave and hot pressingWhile melting ball, work hardening does not occur yet, and resistance to vibration does not increase in the time that line is out of shape. Also can be byModified heat treatment, the hardness control by the closing line after ratio with 4% is stretched is to particular range,Control the static strength of closing line.
Therefore be, to contain at this according to copper-rhodium alloy line of the ball bonding for semiconductor device of the present inventionThe purity that has rhodium and surplus be copper (Cu) more than 99.995 quality % the copper for semiconductor device-In rhodium alloy line, rhodium (Rh) is dissolved in high-purity copper using the amount of 0.1-1.5 quality % as metallic elementIn matrix, and sulphur (S) and oxygen (O) are respectively with 1.0-10 quality ppm and 10-150 quality ppmAmount is dissolved in high-purity copper matrix as nonmetalloid.
And, be to contain at this according to copper-rhodium alloy line of the ball bonding for semiconductor device of the present inventionThe purity that has rhodium and surplus be copper (Cu) more than 99.995 quality % the copper for semiconductor device-In rhodium alloy line, rhodium (Rh) is dissolved in high-purity copper using the amount of 0.1-1.5 quality % as metallic elementIn matrix, and sulphur (S), oxygen (O) and phosphorus (P) are respectively with 1.0-10 quality ppm, 10-150 qualityThe amount of ppm and 1-10 quality ppm is dissolved in high-purity copper matrix as nonmetalloid.
Due to rhodium (Rh) though also relatively costly in noble metal, so its is not yet considered with amount of %Level is as the positive additive being distributed in copper (Cu) baseline etc., and therefore it as additive elementValidity still belong to unknown.
But rhodium (Rh) is oxidized soon unlike copper (Cu). And, think rhodium (Rh) tool compared with copper (Cu)There is the stronger affinity to sulphur (S). In view of this, when use rhodium (Rh) in Cu rich alloy time, rhodium(Rh) limited the movement in copper (Cu) matrix of sulphur (S) and oxygen (O), thus, sulphur (S) is in molten ballSurface in separation even in the time that the latter forms, be also limited. As a result of, even when molten ball changeWhen shape, if contain a certain amount of rhodium (Rh), the work hardening triggering due to the surface segregation of sulphur (S)Also do not occur, thereby and suppressed aluminium and splash. And rhodium (Rh) has limited the oxidation of copper (Cu), andHave and the lip-deep oxidation copper film attenuate of closing line is made the secondary zygosity of closing line improveEffect.
In the present invention, the content of rhodium (Rh) is appointed as 0.1-1.5 quality %, because if be less than 0.1%,Can not prevent the surface segregation of sulphur (S), and if be greater than 1.5 quality %, there is the alloy due to rhodiumChange the strengthening effect causing, and resistance to vibration becomes too high and therefore there will be aluminium to splash and chip breaksSplit. Preferably dissolve rhodium (Rh) with the amount of 0.3-1.2 quality %, to stablize connecing of closing line of the present inventionClose performance, or more preferably 0.4-0.8 quality %.
In the present invention, add sulphur (S) with the very little amount of 1.0-10 quality ppm, so that engageThe pliability (toughness) of line is guaranteed, and therefore eradicates inclination defect. If sulfur content is less than 1.0 matterAmount ppm, can not ensure this pliability (toughness), and if exceed 10 quality ppm, sulphur will beDuring ball bonding, experience surface segregation and aluminium splash become be easy to occur.
And in the situation that engaging melting, in the time that Cu-Rh alloy wire is out of shape, sulphur triggers dynamically heavyCrystallization, and therefore, even because work hardening also occurs in the time of the plastic deformation of line experience relatively weakly,So compared with without sulphur Cu-Rh alloy bond line in the situation that, become by the possibility that aluminium splashesLower.
And, in the present invention, add oxygen (O) with 10-150 quality ppm, and this is in order to controlThe movement in copper (Cu) matrix of sulphur processed (S) and rhodium (Rh). If oxygen (O) content is less than 10 qualityPpm, does not obtain this effect, and if oxygen content is greater than 150 quality ppm, in the time that molten ball formsOxidation film forms and becomes easier on ball surface.
In addition, according to the present invention, if dissolved in copper (Cu) matrix with the amount of 1-10 quality ppmPhosphorus (P), this is preferred. If there is phosphorus with 1-10 quality ppm in copper (Cu) matrix,Limited the movement of oxygen (O), and the pliability of closing line (toughness) improves. If phosphorus is less than 1 quality ppm,Do not obtain this effect, and if it be greater than 10 quality ppm, lose the balance with sulphur and oxygen (O).
In closing line of the present invention, the concentration of oxygen (O), sulphur (S) and phosphorus (P) is several quality ppm'sMagnitude, and because so, they approach usually said being derived from for the raw-material of line and can not keep awayThe level of the impurity of exempting from, so that the control of the concentration of other inevitable impurity must be obtained low as far as possible.As seen in the comparative example hereinafter described 3 and 6, being permitted in these inevitable impurityMany static strength and resistance to vibrations that affects line, and hinder thus or cover formation composition of the present inventionEffect.
Therefore, the purity that must guarantee initial copper (Cu) is more than 99.995 quality %, that is, and and can notThe total concentration of the impurity of avoiding is suppressed at and is less than 50 quality ppm to suppress (contain) these impurityEffect.
Be the example bag of the impurity element that exists in the copper (Cu) of 99.995 quality % in purity of the present inventionDraw together silver (Ag), iron (Fe), nickel (Ni), plumbous (Pb), tin (Sn), antimony (Sb), arsenic (As), bismuth (Bi) and chromium(Cr)。
Preferably, the purity of copper (Cu) is more than 99.997 quality %, to promote copper (Cu) matrixResistance to vibration and pliability (toughness). In the present invention, if initial copper (Cu) has 99.995 matterThe content of the more than % purity of amount and contained rhodium (Rh) between 0.1 to 1.5 quality %, nonmetal unitElement sulphur (S) and oxygen (O) will be dissolved in gold with 1.0-10 quality ppm and 10-150 quality ppm respectivelyBelong in matrix, thereby realize above-mentioned performance.
In the present invention preferably, after the ratio continuous wire drawing and modified heat treatment with 4%,The Vickers hardness of the copper-rhodium alloy line recording is 75-100Hv. Its reason is, when the dosage of rhodiumIn the time of percentage magnitude, if the hardness of copper-rhodium alloy line improves, copper-rhodium after continuous wire drawingThe static strength of alloy wire and resistance to vibration will become and be easy to improve, and as a result of, aluminium splash and because ofThis chip rupture causing becomes and is easy to occur.
Preferably, Vickers hardness is 75-85Hv.
Can be according to the composition of the composition of copper-rhodium alloy line, select heat treated for what implement in centreTemperature. If carry out intermediate heat-treatment, conventionally, at 400-900 degree Celsius, at nonoxidizing atmosphereUnder to carry out 20-120 minute be preferred, more preferably carry out 30-50 at 500-650 degree Celsius and divideClock.
Carry out modified heat treatment in higher temperature and with the short duration (being not more than the several seconds).
Because line is cold drawn continuously before modified heat treatment, modified heat treatment can produce thin uniformlyRecrystallization copper (Cu) matrix. The crystallite dimension of thin recrystallization tissue is by line drawing ratio (cross sectionLong-pending slip) and the modified heat treated kind of carrying out determine. Subsidiary mentioning, draws in order to remove like thisThe object of the stress of the line of stretching and to heat-treat be good.
Preferably, reduce 90% linear diameter is become with respect to the linear diameter before cold continuous wire drawingAbove mode, carries out continuous wire drawing. This has promoted the formation that the stretching of closing line is organized afterwards. More excellentSelection of land, cold drawn rate is more than 99%. Preferably by moulding die orifice, more preferably enter by diamond die orificeRow continuous wire drawing. By like this, the recrystallization tissue that obtains the Bao Erxi of concentric arrangement becomes easier.
In secondary engages, lead frame used is preferably the lead frame that is coated with noble metal.
This precious metal plating is preferably the soft metal coating that uses the metal that similarly is gold (Au) or silver (Ag),Or three layers of coating that formed by sequenced gold (Au)/palladium (Pd)/nickel (Ni) from surface. More preferably platingThe Vickers hardness of layer is approximately equal to the Vickers hardness of closing line. Especially, can be first hard according to Nu ShiDegree is measured the hardness of coating, and makes it approach the Vickers hardness of closing line.
In the present invention, can there is the copper-rhodium alloy being covered by the thick layer of precious metal of 0.5-40nmLine, because this has the effect of restriction oxidation, just as using noble metal as palladium (Pd) covering conventionalThe same in situation in high-purity copper (Cu) line. The layer of precious metal that this 0.5-40nm is thick (passes through extensibilityThe value converting) be suitable for preparing by means of the magnetron sputtering that uses platinum (Pt) or palladium (Pd). These noble metalsLayer is so thin, so that can not disturb the engagement characteristics of copper-rhodium alloy line.
Invention effect
In closing line of the present invention, nonmetalloid sulphur (S) and oxygen (O) are fixed on copper-rhodium (Cu-Rh)In matrix, make in the time that molten ball is out of shape in the time once engaging, sulphur (S) is at surface segregation, because ofThis resistance to vibration does not improve, and in the time that plastic deformation is carried out, the unit being applied on chip by line bearsLotus is constant large, therefore can prevent that aluminium from splashing and tilting. And, utilize copper-rhodium alloy line of the present invention,By the pliability (toughness) of closing line, can form good adapter ring, and therefore secondary zygosityAlso become good.
And closing line of the present invention is not so good as rhodium (Rh) or the such easy oxidation of copper (Cu), and evenlyBe dissolved in copper (Cu) matrix, make oxygen (O) to be fixed in copper (Cu) matrix, and therefore veryFew generation because the aluminium causing in the oxidation on oxygen enrichment surface in the time that molten ball forms splashes broken with chipSplit.
Detailed description of the invention
According to being grouped at the one-tenth shown in table 1, by by a certain amount of sulphur (S) and oxygen (O) and rootThe rhodium (Rh) that may also have phosphorus (P) to be dissolved in to contain scheduled volume according to situation and the purity of surplus are 99.995In the initial copper (Cu) of the copper (Cu) of quality %, the alloy of Preparation Example 1-30, and by each alloyMelting also makes by continuously elongated copper-rhodium alloy preformation molded line that diameter is 10mm.
1-6 as a comparative example, prepares preformation molded line, difference in mode similar to the above embodimentsPart is, in one case, is in the high-purity copper (Cu) of 99.999 quality % to purity, withThe amount of 375 quality ppm is added oxygen, and does not add rhodium (Rh), and in other cases, copper (Cu)The dosage of purity and/or rhodium (Rh), sulphur (S), oxygen (O) and phosphorus (P) changes, or uses in one casePalladium (Pd) layer that 600-nm is thick covers line.
By these preformation molded line after continuously shaped without intermediate annealing and cold drawn continuously, and systemOne-tenth diameter is the closing line of 20 microns. Subsidiary mentioning all carried out in embodiment and comparative example500 degrees Celsius continue the modified heat treatments of a second, exception be as conventional example, do not contain RhThe line of comparative example 1 and 2 accept to continue the modified heat treatment of one second at 550 degrees Celsius.
Till while being plated in diameter at coating by wet method and being on 10mm preformation molded line, measure its thickness,And this measured value is calculated in proportion to the final thickness that obtains coating by extensibility.
In order to measure the Vickers hardness of the closing line after modified heat treatment, use Vickers hardness tester (byThe MVK-G3 that AkashiCorporation produces). Vickers hardness in table 1 is by the ratio with 4%The value that closing line after rate stretches obtains.
(using the engaging condition of hot pressing and hyperacoustic mixed method)
The linear diameter of copper alloy wire is 20 microns, and ring length is that 7mm and ring are highly 200 microns.Use the full-automatic jointing machine MAXXAMPLUSTYPE being produced by K&SCorporation,By copper alloy wire ball bonding, at the Al-zn-mg-cu alloy that is plated in 0.8 micron thick on chip (0.5mm is thick), (Al adds0.5 quality %Cu) on film. Engaging condition is, frequency is 120kHz, configuration FAB preparation condition,Load and ultrasound condition, make in once engaging, and the diameter of FAB becomes 1.8 times of linear diameter,The diameter of the ball subsiding is 2.5 times of linear diameter, and in secondary engages, adjusting condition arbitrarily, withObtain good joint, and under identical condition, whole 100 samples are once engaged andSecondary engages. Capillary used is the capillary of being prepared by SPTCorporation that meets linear dimension.
Subsequently, the each copper-rhodium alloy line engaging being carried out to splash test, inclining experiment and secondary of aluminium engagesQuality test.
(aluminium splash test)
Observe each from top by light microscope (the measuring microscope STM6 being produced by Olympus)The sample wire engaging, magnifying power is 20, with observe around the aluminum pad of bonding land whether thermal deformation and pointOpen. This aluminium splashes to test provides a reference for FAB hardness, relates under FAB statePreparation molten ball by its extruding. In embodiment and comparative example two class situations, all 100 positionsObserve each line, and if even find that place's aluminium splashes, this line is also rated as X, and if do not hadBe found aluminium and splash, be assessed as zero; In embodiment and comparative example two class situations, do not observe coreSheet breaks.
(inclining experiment)
For 100 line segments, use the light microscope (measuring microscope of being produced by OlympusSTM6), measure connecing from the imaginary line by the once prolongation at the abutment of joint and secondary jointThe angle that the ring peak of zygonema tilts, and record its standard deviation (σ). Inclination standard deviation (σ) is 5 micro-The following sample scoring of rice is outstanding (◎), if inclination standard deviation (σ) is in the scope of 5-10 micronIn, mark as good (zero), and the standard deviation (σ) tilting is for exceeding 10 microns, marks scarce for havingFall into (×).
(test of secondary zygosity)
The nickel dam of 10 micron thick is electroplated on copper (Cu) plate, plated similarly the palladium of a micron thick thereon(Pd) layer finally plates gold (Au) layer of 0.5 micron thick on top in the mode of self-catalysis, and soMake lead-in wire substrate. By this lead-in wire substrate in 175 degrees Celsius of heating, by copper rhodium line wedge shapeBe bonded on substrate, and carry out pull-out test with this closing line. The disengaging that whether exists secondary to engageResult is used to assess the quality that secondary engages. When mechanical strength is 7.0gf when above, mark as ◎;In the time that mechanical strength is 6.5-7.0gf, scoring is zero; In the time that mechanical strength is only 6.0-6.5gf,Scoring is △; And when mechanical strength is below 6.0gf time, mark into ×.
Table 1 show the line of embodiment and comparative example composition, whether provide coating, Vickers hardness,And the result of the test that these lines are carried out.
Subsidiary mentioning, has measured oxygen concentration by combustion method and (has used oxygen/nitrogen analysis of being produced by LECOInstrument TC-436AR).
Table 1 (Cu-Rh)
Comparative example 3 amounts of having are greater than the rhodium (Rh) of the upper limit. Therefore, although the concentration of sulphur (S) and oxygen (O)In scope of the present invention, the line of comparative example 3 still becomes concurrent cast alumin(i)um really up to the mark and splashes. On the other hand,In comparative example 4, the concentration of rhodium (Rh) is less than lower limit. Therefore, comparative example 4 find restriction excessiveThe effect aspect of the sulphur (S) existing lost efficacy, and as a result of, the product that aluminium splashes and secondary engages occurredMatter is poor.
About comparative example 4, think that the concentration existence little and sulphur (S) of rhodium (Rh) has caused the dynamic of lineStrength increase obtain so high so that occur aluminium splash. On the other hand, in comparative example 5, sulphur (S)And the concentration of oxygen (O) is lower than lower limit. Therefore, in comparative example 5, even if rhodium (Rh) is in of the present inventionIn scope, but the concentration of sulphur (S) and oxygen (O) is so low, makes to have lost the balance between these,And it is so soft that line becomes, so that produce inclination.
In comparative example 6, the concentration of oxygen (O) is higher than the upper limit of scope of the present invention. Therefore, than, in example 6, static strength and resistance to vibration increase so highly so that generation aluminium splashes, andThe quality that secondary engages affects adversely.
Then, in comparative example 3 and 6, initial copper (Cu) has not purity within the scope of the present invention,And there is high impurity concentration. Therefore, think, contained impurity has impact, and ball is become soHard and static strength becomes so high, so that the line of comparative example 3 and 6 experience aluminium splashes.
The line of comparative example 1 and 2 does not contain rhodium (Rh); The line of comparative example 1 has hyperoxia (O) concentration, andTherefore, when in once engaging, molten ball is compressed, resistance to vibration becomes too high and therefore aluminium occurs and splashes,And also step-down of the pliability of line (toughness), the oxygen on online surface has adversely affected inclination and secondary engagesQuality. Comparative example 2 provides palladium (Pd) coating and has therefore limited oxygen concentration and improved these productMatter, but the quality that secondary engages is good not.
Contrary with above-mentioned comparative example, embodiment within the scope of the invention shown relate to aluminium splash,The good result of the test that inclination and secondary engage.
Can see in the time that rhodium (Rh) content is near these scope central authorities, obtain better result, stillAs seen in embodiment 7,8,21 and 22, in the time that rhodium (Rh) content is 0.3-1.3%, whenThere is balance in the content of additive time, result then become even better, particularly works as rhodium contentDuring for 0.4-0.8 quality %, result is outstanding.
And, in the present invention, seen at embodiment 21 and 22, except by rhodium (Rh), sulphur(S) and outside the content of oxygen (O) is arranged on separately in scope, the phosphorus (P) that has added denier inclines to improveTiltedly, and by noble metal coating is provided, can improve joint quality. Embodiment 29 and 30 demonstrations,The result forming as palladium (Pd) coating, secondary engages quality and is enhanced, and therefore, the present invention not onlyBy its core material, also, by clad material, solve problem.
Industrial applicibility
The present invention is useful, because limited the rhodium (Rh) of the atmospheric oxidn of copper (Cu) by interpolation,It has kept the electrical conductivity of copper (Cu) closing line, and has improved once with secondary and engage quality and inclinationTrend, and therefore provide the outstanding copper (Cu) in electrical property aspect transmitting for semi-conductive signal to connectZygonema.

Claims (7)

1. for copper-rhodium alloy line of the ball bonding that uses at semiconductor device, described copper-rhodium closesGold thread comprises rhodium (Rh) and is copper (Cu) more than 99.995 quality % as the purity of the surplus of matrix,And it is characterized in that the amount of being dissolved with in copper (Cu) matrix more than described purity is 99.995 quality %For the rhodium as metallic element (Rh) and the amount of 0.1-1.5 quality % are respectively 1.0-10 quality ppmThe sulphur as nonmetalloid (S) and oxygen (O) with 10-150 quality ppm.
2. for copper-rhodium alloy line of the ball bonding that uses at semiconductor device, described copper-rhodium closesGold thread comprises rhodium (Rh) and is copper (Cu) more than 99.995 quality % as the purity of the surplus of matrix,And it is characterized in that the amount of being dissolved with in copper (Cu) matrix more than described purity is 99.995 quality %For the rhodium as metallic element (Rh) of 0.1-1.5 quality % and amount be respectively 1.0-10 quality ppm,The sulphur as nonmetalloid (S) of 10-150 quality ppm and 1-10 quality ppm, oxygen (O) andPhosphorus (P).
3. the copper for the ball bonding that uses at semiconductor device according to claim 1 and 2-Rhodium alloy line, the purity that it is characterized in that the copper (Cu) of described surplus is more than 99.998 quality %.
4. the copper for the ball bonding that uses at semiconductor device according to claim 1 and 2-Rhodium alloy line, the Vickers hardness that it is characterized in that described copper-rhodium alloy line is 75-100Hv.
5. the copper for the ball bonding that uses at semiconductor device according to claim 1 and 2-Rhodium alloy line, is characterized in that containing described oxygen (O) than the larger amount of sulphur (S).
6. the copper for the ball bonding that uses at semiconductor device according to claim 1 and 2-Rhodium alloy line, the connecting electrode that it is characterized in that described semiconductor device is the pad that is coated with noble metal.
7. the copper for the ball bonding that uses at semiconductor device according to claim 1 and 2-Rhodium alloy line, the connecting electrode that it is characterized in that described semiconductor device is to be coated with gold (Au), silver (Ag)Or the pad of palladium (Pd).
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