CN103701445B - The drive circuit of a kind of gate-controlled switch device and gate-controlled switch device cell - Google Patents
The drive circuit of a kind of gate-controlled switch device and gate-controlled switch device cell Download PDFInfo
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- CN103701445B CN103701445B CN201310704238.8A CN201310704238A CN103701445B CN 103701445 B CN103701445 B CN 103701445B CN 201310704238 A CN201310704238 A CN 201310704238A CN 103701445 B CN103701445 B CN 103701445B
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Abstract
Embodiments provide drive circuit and the gate-controlled switch device cell of a kind of gate-controlled switch device, in order to solve current gate-controlled switch device owing to using fixed voltage to drive, cause or exist conduction loss relatively big, or there is short circuit turns off that peak voltage is excessive and problem beyond its range of safety operation.This circuit includes: short-circuit detecting circuit, is used for detecting gate-controlled switch device the most short-circuit；Drive level switching circuit, for when gate-controlled switch shorted devices, uses the voltage signal of the first level to drive the control end of gate-controlled switch device；And when the not short circuit of gate-controlled switch device, stop the control end using the voltage signal of the first level to drive gate-controlled switch device；Logic control circuit, at gate-controlled switch shorted devices, turns off gate-controlled switch device；And when the not short circuit of gate-controlled switch device, make amplifying circuit this control signal be amplified under the driving of the voltage signal of second electrical level, in order to drive the control end of gate-controlled switch device.
Description
Technical field
The present invention relates to electric and electronic technical field, particularly relate to a kind of gate-controlled switch device drive circuit and
Gate-controlled switch device cell.
Background technology
In high-power electric and electronic technical field, owing to being limited with heat radiation by gate-controlled switch device loss,
The frequency of switching device switch tends not to the highest, as a example by the photovoltaic DC-to-AC converter that power is hundreds of kW, and two
The switching frequency of the switching device in the electrical level inverter often derailing switch in 2-5kHz, three-level inverter
The switching frequency of part is often at 5-12kHz.Therefore, at switching frequency than relatively low middle high-power applications occasion,
The conduction loss of IGBT module is occupied an leading position in total losses.Therefore, by reducing the module of IGBT
Loss, thus the conduction loss reducing IGBT module is an effective way.
IGBT module conduction loss is directly proportional to IGBT ON time, conducting electric current and on-state voltage drop.Lead
Logical time, electric conduction flow to toward by use IGBT module system specifically apply decision, it is impossible to freely change
Become；On-state voltage drop is relevant with the junction temperature of IGBT and driving voltage.
Current IGBT typically uses fixed voltage to drive, and modal is exactly that high level 15V drives IGBT
Gate pole.Using system one timing of IGBT, in the case of conducting electric current is equal, the junction temperature of IGBT is more
Low, the on-state voltage drop of this IGBT is the least, but heat radiation cost has a larger increase accordingly.It addition, conducting
In the case of electric current is equal, the driving voltage Vge of IGBT increases, the on-state voltage drop Vce meeting of this IGBT
Decline；But, after the driving voltage Vge of IGBT increases, short when IGBT module is short-circuited
Road electric current also can increase, and causes short circuit shutoff peak voltage possible excessive and exceeds its range of safety operation.
IGBT be turned off to IGBT after being short-circuited before time a length of duration bearing short circuit current,
If after IGBT is short-circuited, fail to close IGBT in IGBT bears the maximum duration of short circuit current,
Then IGBT can damage.
In sum, current gate-controlled switch device uses fixed voltage to drive, when driving voltage is relatively low,
The on-state voltage drop of gate-controlled switch device is relatively big, and the conduction loss causing gate-controlled switch device is relatively big, gate-controlled switch
The short circuit current of device is less；When driving voltage is higher, the on-state voltage drop of gate-controlled switch device is less, can
The conduction loss of control switching device is less, but now, the short circuit current of gate-controlled switch device is relatively big, causes short
Road shutoff peak voltage is possible excessive and exceeds its range of safety operation.
Summary of the invention
Embodiments provide drive circuit and the gate-controlled switch device cell of a kind of gate-controlled switch device,
Drive due to employing fixed voltage in order to solve current gate-controlled switch device, cause or there is conduction loss
Relatively big, otherwise there is short circuit turns off that peak voltage is excessive and problem beyond its range of safety operation.
First aspect, it is provided that the drive circuit of a kind of gate-controlled switch device, including logic control circuit, amplification
Circuit, short-circuit detecting circuit, drive level switching circuit；
Described short-circuit detecting circuit, for when gate-controlled switch shorted devices being detected, switches to drive level
Circuit and logic control circuit export the first indication signal；And when the not short circuit of gate-controlled switch device being detected,
The second indication signal is exported to drive level switching circuit and logic control circuit；
Drive level switching circuit, for when receiving the first indication signal, uses the voltage of the first level
Signal drives the control end of gate-controlled switch device；And when receiving the second indication signal, stop employing first
The voltage signal of level drives the control end of gate-controlled switch device；
Logic control circuit, for using the receiving the first indication signal and drive level switching circuit
After the voltage signal of one level drives the control end of gate-controlled switch device, turn off gate-controlled switch device；And connecing
When receiving the second indication signal, export control signal to amplifying circuit, make amplifying circuit at the electricity of second electrical level
This control signal being amplified under the driving of pressure signal, the control signal after amplification is used for driving gate-controlled switch device
Control end, the level that can make the signal that gate-controlled switch device opens in the control signal after amplification is second
Level；Wherein, the first level is less than second electrical level, and the voltage signal of the first level can make gate-controlled switch device
Part is open-minded.
In conjunction with first aspect, in the implementation that the first is possible, described drive level switching circuit includes
Bleeder circuit and the first on-off circuit；
Bleeder circuit, for the voltage signal of second electrical level carries out dividing potential drop, and exports the letter of the voltage after dividing potential drop
Number as the voltage signal of the first level；
First on-off circuit, at the electricity controlling end receiving the first indication signal and gate-controlled switch device
When putting down higher than the first level, the voltage signal of the first level is used to drive the control end of gate-controlled switch device；And
When receiving the second indication signal, stop using the voltage signal of the first level to drive gate-controlled switch device
Control end.
In conjunction with the first possible implementation of first aspect, in the implementation that the second is possible, institute
State bleeder circuit and include the first resistance and Zener diode；
The voltage signal of the second electrical level received is transmitted by described first resistance by described Zener diode
To ground, the electricity that voltage signal is the first level of one end that described first resistance is connected with described Zener diode
Pressure signal.
In conjunction with the implementation that the second of first aspect is possible, in the implementation that the third is possible, institute
State bleeder circuit and also include storage capacitor；
Described storage capacitor is in parallel with described Zener diode, the capacitance of described storage capacitor more than described can
The parasitic capacitance controlled between end and the outfan of described gate-controlled switch device of control switching device.
In conjunction with the first possible implementation of first aspect, in the 4th kind of possible implementation, institute
State the first on-off circuit and include the first switching tube and the first diode；The control end of described first switching tube receives
The signal of short-circuit detecting circuit output, described first switching tube and described first Diode series；
Described first switching tube, for exporting the first indication signal at described short-circuit detecting circuit and controlled opening
The level controlling end closing device is open-minded higher than during the first level, by the level controlling end of gate-controlled switch device
It is pulled low to the first level；And turn off when described short-circuit detecting circuit exports the second indication signal.
In conjunction with the 4th kind of possible implementation of first aspect, in the 5th kind of possible implementation, institute
State drive level switching circuit and also include second switch circuit；
Described second switch circuit, for receiving the control end of the first indication signal and gate-controlled switch device
Level less than the first level time, use the first level voltage signal drive gate-controlled switch device control
End；And when receiving the second indication signal, stop using the voltage signal of the first level to drive gate-controlled switch
The control end of device.
In conjunction with the 5th kind of possible implementation of first aspect, in the 6th kind of possible implementation, institute
State second switch circuit and include second switch pipe and the second diode；The control end of described second switch pipe receives
The signal of short-circuit detecting circuit output, described second switch pipe and described second Diode series；
Described second switch pipe, for exporting the first indication signal at described short-circuit detecting circuit and controlled opening
The level controlling end closing device is open-minded less than during the first level；And export second at described short-circuit detecting circuit
Turn off during indication signal.
Second aspect, it is provided that a kind of gate-controlled switch device cell, implements including gate-controlled switch device and the present invention
The drive circuit of the gate-controlled switch device that example provides.
The beneficial effect of the embodiment of the present invention includes:
The drive circuit of gate-controlled switch device that the embodiment of the present invention provides, due to can be at gate-controlled switch device
Not during short circuit, the voltage signal of second electrical level is used to drive this gate-controlled switch break-over of device, and at gate-controlled switch
During shorted devices, using the voltage signal of the first level to drive this gate-controlled switch break-over of device, the first level is low
In second electrical level, therefore, can either realize, when the not short circuit of gate-controlled switch device, reducing on-state voltage drop, from
And reduce on-state loss, it is capable of again when gate-controlled switch shorted devices, reduces short circuit current, thus drop
Peak voltage during low shutoff, improves the functional reliability of gate-controlled switch device.
Accompanying drawing explanation
One of structural representation of drive circuit of gate-controlled switch device that Fig. 1 provides for the embodiment of the present invention；
The two of the structural representation of the drive circuit of the gate-controlled switch device that Fig. 2 provides for the embodiment of the present invention；
The three of the structural representation of the drive circuit of the gate-controlled switch device that Fig. 3 provides for the embodiment of the present invention；
The four of the structural representation of the drive circuit of the gate-controlled switch device that Fig. 4 provides for the embodiment of the present invention；
The five of the structural representation of the drive circuit of the gate-controlled switch device that Fig. 5 provides for the embodiment of the present invention.
Detailed description of the invention
The drive circuit of a kind of controllable devices that the embodiment of the present invention provides, the most short-circuit at gate-controlled switch device
Time, use the voltage signal of second electrical level to drive this gate-controlled switch break-over of device, and short at gate-controlled switch device
Lu Shi, uses the voltage signal of the first level to drive this gate-controlled switch break-over of device, and the first level is less than second
Level, thus realize, when the not short circuit of gate-controlled switch device, reducing on-state voltage drop, and then reducing on-state loss,
And realize when gate-controlled switch shorted devices, reduce short circuit current, and then reduce peak voltage when turning off,
Improve the functional reliability of gate-controlled switch device.
Below in conjunction with Figure of description, the driving electricity to a kind of gate-controlled switch device that the embodiment of the present invention provides
The detailed description of the invention of road and gate-controlled switch device cell illustrates.
The drive circuit of a kind of gate-controlled switch device that the embodiment of the present invention provides, as it is shown in figure 1, include patrolling
Collect control circuit 11, amplifying circuit 12, short-circuit detecting circuit 13, drive level switching circuit 14；Fig. 1
In gate-controlled switch device be IGBT, it is of course also possible to be other type of switching device.
Short-circuit detecting circuit 13, for when detecting IGBT Q1 short circuit, to drive level switching circuit
14 and logic control circuit 11 export the first indication signal；And when IGBT Q1 not short circuit being detected, to
Drive level switching circuit 14 and logic control circuit 11 export the second indication signal；
Drive level switching circuit, for when receiving the first indication signal, uses the voltage of the first level
Signal drives the control end of gate-controlled switch device, i.e. the gate pole G of IGBT Q1；And receiving the second instruction
During signal, stop the gate pole G using the voltage signal of the first level to drive IGBT Q1；
Logic control circuit 11, for receiving the first indication signal and drive level switching circuit 14
After the voltage signal using the first level drives the gate pole G of IGBT Q1, turn off IGBT Q1；And connecing
When receiving the second indication signal, export control signal to amplifying circuit 12, make amplifying circuit 12 at the second electricity
This control signal being amplified under the driving of flat voltage signal, the control signal after amplification is used for driving IGBT
The gate pole G of Q1, the level that can make the signal that IGBT Q1 opens in the control signal after amplification is second
Level；Wherein, the first level is less than second electrical level, and the voltage signal of the first level can make IGBT Q1
Open-minded.
Logic control circuit needs can bear before the maximum duration of short circuit current terminates at gate-controlled switch device,
I.e. can bear at IGBT Q1 and turn off gate-controlled switch device before the maximum duration of short circuit current terminates, to avoid
Gate-controlled switch device failure.
Wherein, short-circuit detecting circuit is by the voltage between input and the outfan of detection gate-controlled switch device
Determine that gate-controlled switch device is the most short-circuit.In the circuit shown in Fig. 1, short-circuit detecting circuit 13 is permissible
Determine that IGBT Q1 is the most short-circuit by the voltage between colelctor electrode and the emitter stage of detection IGBT Q1,
Can also determine that IGBT Q1 is the most short-circuit by other means.
When short-circuit detecting circuit detects the not short circuit of gate-controlled switch device, the voltage of the first level is not used to believe
Number driving the control end of gate-controlled switch device, and logic control circuit detects controlled opening at short-circuit detecting circuit
When closing device not short circuit, control signal can be exported to amplifying circuit, make amplifying circuit at the voltage of second electrical level
This control signal being amplified under the driving of signal, the control signal after amplification is for driving gate-controlled switch device
Control end, owing to control signal is after amplifying, control signal can make the letter that gate-controlled switch device is opened
Number level be second electrical level, say, that gate-controlled switch device not short circuit time, gate-controlled switch device exists
Under the driving of the voltage signal of second electrical level open-minded；When short-circuit detecting circuit detects gate-controlled switch shorted devices
Time, use the voltage signal of the first level to drive the control end of gate-controlled switch device, controlled when will be short-circuited
The level i.e. second electrical level controlling end of switching device is pulled down to the first level, and logic control circuit is examined in short circuit
Slowdown monitoring circuit detects that the end that controls of gate-controlled switch shorted devices and gate-controlled switch device uses the electricity of the first level
After pressure signal drives, can bear before the maximum duration of short circuit current terminates at gate-controlled switch device, the most controlled
Before switching device is damaged, gate-controlled switch device can be turned off；It is to say, logic control circuit can in shutoff
During control switching device, gate-controlled switch device uses the voltage signal of the first level to drive and open-minded, due to first
Level is less than second electrical level, therefore, uses the drive circuit of the gate-controlled switch device of embodiment of the present invention offer
So that during the not short circuit of gate-controlled switch device, use the voltage signal of second electrical level to drive this gate-controlled switch device
Part turns on, and when gate-controlled switch shorted devices, uses the voltage signal of the first level to drive this gate-controlled switch
Break-over of device, uses the gate-controlled switch break-over of device that the voltage signal of the first level drives, thus realizes can
During the not short circuit of control switching device, reduce on-state voltage drop, and then reduce on-state loss, and realize at gate-controlled switch
During shorted devices, reduction short circuit current, thus peak voltage when reducing shutoff, improve gate-controlled switch device
Functional reliability.
Alternatively, the drive circuit of the gate-controlled switch device that the embodiment of the present invention provides, as in figure 2 it is shown, its
In drive level switching circuit include bleeder circuit 141 and the first on-off circuit 142；
Bleeder circuit 141, for carrying out dividing potential drop, and after exporting dividing potential drop to the voltage signal V2 of second electrical level
Voltage signal as the voltage signal of the first level；
First on-off circuit 142, for receiving the control end of the first indication signal and gate-controlled switch device,
When the level of the gate pole G of i.e. IGBT Q1 is higher than the first level, the voltage signal of the first level is used to drive
The gate pole G of IGBT Q1；And when receiving the second indication signal, stop using the voltage letter of the first level
Number drive IGBT Q1 gate pole G.
Alternatively, as it is shown on figure 3, bleeder circuit includes the first resistance R1 and Zener diode DW1；The
The voltage signal V2 of the second electrical level received is transmitted to ground by one resistance R1 by Zener diode DW2,
The voltage that voltage signal is the first level letter of one end that the first resistance R1 is connected with Zener diode DW2
Number.
Alternatively, as it is shown on figure 3, bleeder circuit also includes storage capacitor C1, storage capacitor C1 and voltage stabilizing
Diode DW1 is in parallel, and the capacitance of storage capacitor C1 is more than the control end of gate-controlled switch device with described
Parasitic capacitance between the outfan of gate-controlled switch device, i.e. gate pole G and emitter E more than IGBT Q1
Between parasitic capacitance.
Alternatively, as it is shown on figure 3, the first on-off circuit includes that the first switching tube (uses NPN in Fig. 3
Type the first audion T1, naturally it is also possible to be that other has the switching tube of similar functions) and the first diode
D1；The control end of the first switching tube, it is defeated that the base stage of the i.e. first audion T1 receives short-circuit detecting circuit 13
The signal gone out, audion T1 and the first diode D1 series connection；
First switching tube, for exporting the first indication signal at described short-circuit detecting circuit 13 and controlled opening
Close the control end of device, i.e. the level of the gate pole G of IGBT Q1 is open-minded, by IGBT higher than during the first level
The level of the gate pole G of Q1 is pulled low to the first level；And export the second indication signal at short-circuit detecting circuit 13
Time turn off.
So when detecting that IGBT Q1 is not short-circuited, storage capacitor C1 is complete charging,
Detecting when IGBT Q1 is short-circuited, on storage capacitor C1, the electric charge of storage can be rapidly by IGBT Q1
The voltage pull-down of gate pole G to the first level, it is to avoid when detecting that IGBT Q1 is short-circuited, due to
Circuit does not has the electric charge that storage capacitor stores, and the electric current flowing through the first on-off circuit is smaller so that
The second electrical level controlling end of gate-controlled switch device is pulled down to the duration of the first level more than at gate-controlled switch
Device can bear the maximum duration of short circuit current so that logic control circuit is turning off gate-controlled switch device
Time, the level controlling end of gate-controlled switch device fails to be reduced to the first level, causes gate-controlled switch device
Short circuit current is the biggest.
Alternatively, the drive circuit of the gate-controlled switch device that the embodiment of the present invention provides, as shown in Figure 4, drives
Dynamic level switching circuit also includes second switch circuit 143；Second switch circuit 143, for receiving
The control end of the first indication signal and gate-controlled switch device, i.e. the level of the gate pole G of IGBT Q1 is less than the
During one level, the voltage signal of the first level is used to drive the control end of gate-controlled switch device；And receiving
During the second indication signal, stop using the gate pole G of the voltage signal driving i.e. IGBT Q1 of the first level.
Alternatively, as it is shown in figure 5, the second switch circuit that the embodiment of the present invention provides includes second switch pipe
(Fig. 3 uses NPN type the second audion T2, naturally it is also possible to be that other has the switch of similar functions
Pipe) and the second diode D2；The control end of second switch pipe, the base stage of the i.e. second audion T2 receives short
The signal of alignment detection circuit 13 output, the second audion T2 and the second diode D2 series connection；
Second switch pipe, the i.e. second audion T2, for exporting the first instruction letter at short-circuit detecting circuit 13
Number and the control end of gate-controlled switch device, i.e. the level of the gate pole G of IGBT Q1 less than the first level time
Open-minded；And turn off when short-circuit detecting circuit 13 exports the second indication signal.
After gate-controlled switch device is turned off, its voltage controlling end is gradually lowered, when this voltage is down to first
Level the following is, the second audion T2 conducting, thus reduce the voltage controlling end of gate-controlled switch device
Reduce speed, i.e. reduce the turn-off speed of gate-controlled switch device, reduce peak current when it turns off further.
Further, since the control end at gate-controlled switch device puts into storage capacitor C1, be equivalent to increase controlled opening
Closing the parasitic capacitance controlled between end and outfan of device, this can reduce gate-controlled switch device further
Control the reduction speed of the voltage of end, thus reduce peak current when it turns off further.
Short-circuit detecting circuit can export high level signal and make as the first indication signal, output low level signal
It it is the second indication signal；Can also output low level signal as the first indication signal, export high level signal
As the second indication signal.
The driving voltage of the gate pole of the most conventional IGBT is 15V, uses driving of embodiment of the present invention offer
Galvanic electricity road, can be raised to 16V-18V, door during short circuit by the driving voltage of gate pole during IGBT not short circuit
Electrode drop is to 12V.
A kind of gate-controlled switch device cell that the embodiment of the present invention provides, including gate-controlled switch device, and this
The drive circuit of the gate-controlled switch device that bright embodiment provides, is used for driving gate-controlled switch device.
Through the above description of the embodiments, those skilled in the art is it can be understood that arrive the present invention
Embodiment can be realized by hardware, it is also possible to the mode of the general hardware platform adding necessity by software is come real
Existing.Based on such understanding, the technical scheme of the embodiment of the present invention can embody with the form of software product
Come, this software product can be stored in a non-volatile memory medium (can be CD-ROM, USB flash disk,
Portable hard drive etc.) in, including some instructions with so that computer equipment (can be personal computer,
Server, or the network equipment etc.) perform the method described in each embodiment of the present invention.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferred embodiment, the mould in accompanying drawing
Block or flow process are not necessarily implemented necessary to the present invention.
It will be appreciated by those skilled in the art that the module in the device in embodiment can describe according to embodiment
Carry out being distributed in the device of embodiment, it is also possible to carry out respective change and be disposed other than one of the present embodiment
Or in multiple device.The module of above-described embodiment can merge into a module, it is also possible to is further split into
Multiple submodules.
The invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these amendment and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these change and modification.
Claims (7)
1. the drive circuit of a gate-controlled switch device, it is characterised in that include logic control circuit, put
Big circuit, short-circuit detecting circuit, drive level switching circuit；
Described short-circuit detecting circuit, for when gate-controlled switch shorted devices being detected, switches to drive level
Circuit and logic control circuit export the first indication signal；And when the not short circuit of gate-controlled switch device being detected,
The second indication signal is exported to drive level switching circuit and logic control circuit；
Drive level switching circuit, for when receiving the first indication signal, uses the voltage of the first level
Signal drives the control end of gate-controlled switch device；And when receiving the second indication signal, stop employing first
The voltage signal of level drives the control end of gate-controlled switch device；
Logic control circuit, for using the receiving the first indication signal and drive level switching circuit
After the voltage signal of one level drives the control end of gate-controlled switch device, turn off gate-controlled switch device；And connecing
When receiving the second indication signal, export control signal to amplifying circuit, make amplifying circuit at the electricity of second electrical level
This control signal being amplified under the driving of pressure signal, the control signal after amplification is used for driving gate-controlled switch device
Control end, the level that can make the signal that gate-controlled switch device opens in the control signal after amplification is second
Level；Wherein, the first level is less than second electrical level, and the voltage signal of the first level can make gate-controlled switch device
Part is open-minded；
Wherein, described drive level switching circuit includes bleeder circuit and the first on-off circuit；
Described bleeder circuit, for the voltage signal of second electrical level is carried out dividing potential drop, and exports the electricity after dividing potential drop
Pressure signal is as the voltage signal of the first level；
Described first on-off circuit, for receiving the control end of the first indication signal and gate-controlled switch device
Level higher than the first level time, use the first level voltage signal drive gate-controlled switch device control
End；And when receiving the second indication signal, stop using the voltage signal of the first level to drive gate-controlled switch
The control end of device.
2. circuit as claimed in claim 1, it is characterised in that described bleeder circuit includes the first resistance
And Zener diode；
The voltage signal of the second electrical level received is transmitted by described first resistance by described Zener diode
To ground, the electricity that voltage signal is the first level of one end that described first resistance is connected with described Zener diode
Pressure signal.
3. circuit as claimed in claim 2, it is characterised in that described bleeder circuit also includes energy storage electricity
Hold；
Described storage capacitor is in parallel with described Zener diode, the capacitance of described storage capacitor more than described can
The parasitic capacitance controlled between end and the outfan of described gate-controlled switch device of control switching device.
4. circuit as claimed in claim 1, it is characterised in that described first on-off circuit includes first
Switching tube and the first diode；The end that controls of described first switching tube receives the letter of short-circuit detecting circuit output
Number, described first switching tube and described first Diode series；
Described first switching tube, for exporting the first indication signal at described short-circuit detecting circuit and controlled opening
The level controlling end closing device is open-minded higher than during the first level, by the level controlling end of gate-controlled switch device
It is pulled low to the first level；And turn off when described short-circuit detecting circuit exports the second indication signal.
5. circuit as claimed in claim 4, it is characterised in that described drive level switching circuit is also wrapped
Include second switch circuit；
Described second switch circuit, for receiving the control end of the first indication signal and gate-controlled switch device
Level less than the first level time, use the first level voltage signal drive gate-controlled switch device control
End；And when receiving the second indication signal, stop using the voltage signal of the first level to drive gate-controlled switch
The control end of device.
6. circuit as claimed in claim 5, it is characterised in that described second switch circuit includes second
Switching tube and the second diode；The end that controls of described second switch pipe receives the letter of short-circuit detecting circuit output
Number, described second switch pipe and described second Diode series；
Described second switch pipe, for exporting the first indication signal at described short-circuit detecting circuit and controlled opening
The level controlling end closing device is open-minded less than during the first level；And export second at described short-circuit detecting circuit
Turn off during indication signal.
7. a gate-controlled switch device cell, it is characterised in that include gate-controlled switch device, and such as right
The drive circuit of requirement gate-controlled switch device described in any one of 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310704238.8A CN103701445B (en) | 2013-12-19 | The drive circuit of a kind of gate-controlled switch device and gate-controlled switch device cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310704238.8A CN103701445B (en) | 2013-12-19 | The drive circuit of a kind of gate-controlled switch device and gate-controlled switch device cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103701445A CN103701445A (en) | 2014-04-02 |
| CN103701445B true CN103701445B (en) | 2016-11-30 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102594102A (en) * | 2012-02-22 | 2012-07-18 | 杭州飞仕得科技有限公司 | IGBT (insulated gate bipolar translator) driving power supply applicable to multilevel converter and driving method thereof |
| CN102893524A (en) * | 2010-04-14 | 2013-01-23 | 本田技研工业株式会社 | Short-circuit protection method |
| CN103036415A (en) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | Power semiconductor switch series circuit and control method thereof |
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102893524A (en) * | 2010-04-14 | 2013-01-23 | 本田技研工业株式会社 | Short-circuit protection method |
| CN103036415A (en) * | 2011-09-29 | 2013-04-10 | 台达电子企业管理（上海）有限公司 | Power semiconductor switch series circuit and control method thereof |
| CN102594102A (en) * | 2012-02-22 | 2012-07-18 | 杭州飞仕得科技有限公司 | IGBT (insulated gate bipolar translator) driving power supply applicable to multilevel converter and driving method thereof |
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