CN103701445A - Driving circuit of controllable switching device and controllable switching device unit - Google Patents
Driving circuit of controllable switching device and controllable switching device unit Download PDFInfo
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- CN103701445A CN103701445A CN201310704238.8A CN201310704238A CN103701445A CN 103701445 A CN103701445 A CN 103701445A CN 201310704238 A CN201310704238 A CN 201310704238A CN 103701445 A CN103701445 A CN 103701445A
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Abstract
The embodiment of the invention discloses a driving circuit of a controllable switching device and a controllable switching device unit, and solves the problem of higher conduction loss or over high short circuit turn-off spike voltage exceeding a safe working range, caused by adopting a fixed voltage driving in a conventional controllable switching device. The driving circuit comprises a short circuit detecting circuit, a driving electrical level switching circuit, and a logical control circuit, wherein the short circuit detecting circuit is used for detecting whether the controllable switching device is in short circuit or not; the driving electrical level switching circuit is used for adopting voltage signals of a first electrical level to drive the control end of the controllable switching device in case of short circuit of the controllable switching device, and stopping adopting the driving signals of the first electric level to drive the control end of the controllable switching device when the controllable switching device is in short circuit; the logical control circuit is used for turning off the controllable switching device in case of short circuit of the controllable switching device, and enabling an amplification circuit to amplify control signals under the driving of the voltage signals of a second electrical level so as to drive the control end of the controllable switching device if the controllable switching device is not in short circuit.
Description
Technical field
The present invention relates to electric and electronic technical field, relate in particular to a kind of drive circuit and gate-controlled switch device cell of gate-controlled switch device.
Background technology
In high-power electric and electronic technical field, owing to being subject to the restriction of gate-controlled switch device loss and heat radiation, the frequency of switching device switch often can be very not high, the photovoltaic DC-to-AC converter that the power of take is hundreds of kW is example, the switching frequency of the switching device in two-level inverter is often at 2-5kHz, and the switching frequency of the switching device in three-level inverter is often at 5-12kHz.Therefore,, in the lower middle high-power applications occasion of switching frequency, the conduction loss of IGBT module is occupied an leading position in total losses.Therefore, by reducing the module loss of IGBT, thereby the conduction loss of reduction IGBT module is an effective way.
IGBT module conduction loss is directly proportional to IGBT ON time, On current and on-state voltage drop.ON time, On current often, by using the concrete application of the system of IGBT module to determine, can not freely change; On-state voltage drop is relevant with junction temperature and the driving voltage of IGBT.
Current IGBT generally adopts fixed voltage to drive, and modal is exactly that high level 15V drives IGBT gate pole.In the system one of using IGBT regularly, in the equal situation of On current, the junction temperature of IGBT is lower, and the on-state voltage drop of this IGBT is less, but the cost that dispels the heat accordingly has a larger increase.In addition, in the equal situation of On current, the driving voltage Vge of IGBT increases, and the on-state voltage drop Vce of this IGBT can decline to some extent; But after the driving voltage Vge of IGBT increases, short circuit current when IGBT module is short-circuited also can increase, causing short circuit to turn-off peak voltage may be excessive and exceed its range of safety operation.
Duration before IGBT is turned off to IGBT after being short-circuited is the duration that bears short circuit current, if after IGBT is short-circuited, fails to close IGBT in IGBT bears the maximum duration of short circuit current, and IGBT can damage.
In sum, current gate-controlled switch device adopts fixed voltage to drive, and when driving voltage is lower, the on-state voltage drop of gate-controlled switch device is larger, causes the conduction loss of gate-controlled switch device larger, and the short circuit current of gate-controlled switch device is less; When driving voltage is higher, the on-state voltage drop of gate-controlled switch device is less, and the conduction loss of gate-controlled switch device is less, but now, the short circuit current of gate-controlled switch device is larger, and causing short circuit to turn-off peak voltage may be excessive and exceed its range of safety operation.
Summary of the invention
The embodiment of the present invention provides a kind of drive circuit and gate-controlled switch device cell of gate-controlled switch device, in order to solve current gate-controlled switch device owing to adopting fixed voltage to drive, cause or exist conduction loss larger, or it is excessive and exceed the problem of its range of safety operation to exist short circuit to turn-off peak voltage.
First aspect, provides a kind of drive circuit of gate-controlled switch device, comprises logic control circuit, amplifying circuit, short-circuit detecting circuit, drive level commutation circuit;
Described short-circuit detecting circuit, for when the short circuit of gate-controlled switch device being detected, exports the first index signal to drive level commutation circuit and logic control circuit; And gate-controlled switch device being detected not during short circuit, to drive level commutation circuit and logic control circuit, export the second index signal;
Drive level commutation circuit, for when receiving the first index signal, adopts the control end of the voltage signal driving gate-controlled switch device of the first level; And when receiving the second index signal, stop adopting the voltage signal of the first level to drive the control end of gate-controlled switch device;
Logic control circuit, for adopting the voltage signal of the first level to drive after the control end of gate-controlled switch device receiving the first index signal and drive level commutation circuit, turn-offs gate-controlled switch device; And when receiving the second index signal, to amplifying circuit output control signal, amplifying circuit is amplified this control signal under the driving of the voltage signal of second electrical level, control signal after amplification is for driving the control end of gate-controlled switch device, and in the control signal after amplification, can make the level of the signal that gate-controlled switch device opens is second electrical level; Wherein, the first level is lower than second electrical level, and the voltage signal of the first level can make gate-controlled switch device open-minded.
In conjunction with first aspect, in the possible implementation of the first, described drive level commutation circuit comprises bleeder circuit and the first switching circuit;
Bleeder circuit, for the voltage signal of second electrical level is carried out to dividing potential drop, and exports voltage signal after dividing potential drop as the voltage signal of the first level;
The first switching circuit, for the level of control end receiving the first index signal and gate-controlled switch device during higher than the first level, adopts the voltage signal of the first level to drive the control end of gate-controlled switch device; And when receiving the second index signal, stop adopting the voltage signal of the first level to drive the control end of gate-controlled switch device.
In conjunction with the possible implementation of the first of first aspect, in the possible implementation of the second, described bleeder circuit comprises the first resistance and voltage stabilizing didoe;
Described the first resistance transfers to ground by the voltage signal of the second electrical level receiving by described voltage stabilizing didoe, and the voltage signal of one end that described the first resistance is connected with described voltage stabilizing didoe is the voltage signal of the first level.
In conjunction with the possible implementation of the second of first aspect, in the third possible implementation, described bleeder circuit also comprises storage capacitor;
Described storage capacitor is in parallel with described voltage stabilizing didoe, and the capacitance of described storage capacitor is greater than the parasitic capacitance between the control end of described gate-controlled switch device and the output of described gate-controlled switch device.
In conjunction with the possible implementation of the first of first aspect, in the 4th kind of possible implementation, described the first switching circuit comprises the first switching tube and the first diode; The control end of described the first switching tube receives the signal of short-circuit detecting circuit output, described the first switching tube and described the first diode series connection;
Described the first switching tube, open-minded during higher than the first level for the level of control end of exporting the first index signal and gate-controlled switch device at described short-circuit detecting circuit, the level of the control end of gate-controlled switch device is pulled low to the first level; And when exporting the second index signal, turn-offs described short-circuit detecting circuit.
In conjunction with the 4th kind of possible implementation of first aspect, in the 5th kind of possible implementation, described drive level commutation circuit also comprises second switch circuit;
Described second switch circuit, for the level of control end receiving the first index signal and gate-controlled switch device during lower than the first level, adopts the voltage signal of the first level to drive the control end of gate-controlled switch device; And when receiving the second index signal, stop adopting the voltage signal of the first level to drive the control end of gate-controlled switch device.
In conjunction with the 5th kind of possible implementation of first aspect, in the 6th kind of possible implementation, described second switch circuit comprises second switch pipe and the second diode; The control end of described second switch pipe receives the signal of short-circuit detecting circuit output, described second switch pipe and described the second diode series connection;
Described second switch pipe, open-minded during lower than the first level for the level of control end of exporting the first index signal and gate-controlled switch device at described short-circuit detecting circuit; And when exporting the second index signal, turn-offs described short-circuit detecting circuit.
Second aspect, provides a kind of gate-controlled switch device cell, comprises the drive circuit of the gate-controlled switch device that gate-controlled switch device and the embodiment of the present invention provide.
The beneficial effect of the embodiment of the present invention comprises:
The drive circuit of the gate-controlled switch device that the embodiment of the present invention provides, due to can be at gate-controlled switch device not during short circuit, adopt the voltage signal of second electrical level to drive this gate-controlled switch break-over of device, and when the short circuit of gate-controlled switch device, adopt the voltage signal of the first level to drive this gate-controlled switch break-over of device, the first level is lower than second electrical level, therefore, can either realize at gate-controlled switch device not during short circuit, reduce on-state voltage drop, thereby reduction on-state loss, can realize again when the short circuit of gate-controlled switch device, reduce short circuit current, thereby reduce the peak voltage while turn-offing, improve the functional reliability of gate-controlled switch device.
Accompanying drawing explanation
One of structural representation of the drive circuit of the gate-controlled switch device that Fig. 1 provides for the embodiment of the present invention;
Two of the structural representation of the drive circuit of the gate-controlled switch device that Fig. 2 provides for the embodiment of the present invention;
Three of the structural representation of the drive circuit of the gate-controlled switch device that Fig. 3 provides for the embodiment of the present invention;
Four of the structural representation of the drive circuit of the gate-controlled switch device that Fig. 4 provides for the embodiment of the present invention;
Five of the structural representation of the drive circuit of the gate-controlled switch device that Fig. 5 provides for the embodiment of the present invention.
Embodiment
The drive circuit of a kind of controllable devices that the embodiment of the present invention provides, at gate-controlled switch device not during short circuit, adopt the voltage signal of second electrical level to drive this gate-controlled switch break-over of device, and when the short circuit of gate-controlled switch device, adopt the voltage signal of the first level to drive this gate-controlled switch break-over of device, the first level is lower than second electrical level, thereby realize at gate-controlled switch device not during short circuit, reduce on-state voltage drop, and then reduction on-state loss, and realize when the short circuit of gate-controlled switch device, reduce short circuit current, and then the peak voltage while reduce turn-offing, improve the functional reliability of gate-controlled switch device.
Below in conjunction with Figure of description, the drive circuit of a kind of gate-controlled switch device that the embodiment of the present invention is provided and the embodiment of gate-controlled switch device cell describe.
The drive circuit of a kind of gate-controlled switch device that the embodiment of the present invention provides, as shown in Figure 1, comprises logic control circuit 11, amplifying circuit 12, short-circuit detecting circuit 13, drive level commutation circuit 14; Gate-controlled switch device in Fig. 1 is IGBT, certainly, can be also the switching device of other type.
Short-circuit detecting circuit 13, for when detecting IGBT Q1 short circuit, to drive level commutation circuit 14 and logic control circuit 11 output the first index signals; And IGBT Q1 detected not during short circuit, to drive level commutation circuit 14 and logic control circuit 11 output the second index signals;
Drive level commutation circuit, for when receiving the first index signal, adopts the control end of the voltage signal driving gate-controlled switch device of the first level, i.e. the gate pole G of IGBT Q1; And when receiving the second index signal, stop adopting the voltage signal of the first level to drive the gate pole G of IGBT Q1;
Before the maximum duration that logic control circuit need to can bear short circuit current at gate-controlled switch device finishes, before finishing, the maximum duration that can bear short circuit current at IGBT Q1 turn-offs gate-controlled switch device, to avoid gate-controlled switch device failure.
Wherein, short-circuit detecting circuit is determined the whether short circuit of gate-controlled switch device by detecting the input of gate-controlled switch device and the voltage between output.In the circuit shown in Fig. 1, short-circuit detecting circuit 13 can be determined whether short circuit of IGBT Q1 by detecting the collector electrode of IGBT Q1 and the voltage between emitter, also can carry out by other means to determine whether short circuit of IGBT Q1.
At short-circuit detecting circuit, gate-controlled switch device detected not during short circuit, do not adopt the control end of the voltage signal driving gate-controlled switch device of the first level, and logic control circuit detects gate-controlled switch device not during short circuit at short-circuit detecting circuit, can be to amplifying circuit output control signal, amplifying circuit is amplified this control signal under the driving of the voltage signal of second electrical level, control signal after amplification is for driving the control end of gate-controlled switch device, because control signal is after amplifying, in control signal, can make the level of the signal that gate-controlled switch device opens is second electrical level, that is to say, at gate-controlled switch device not during short circuit, gate-controlled switch device is open-minded under the driving of the voltage signal of second electrical level, when short-circuit detecting circuit detects the short circuit of gate-controlled switch device, adopt the control end of the voltage signal driving gate-controlled switch device of the first level, the level second electrical level of the control end of gate-controlled switch device is pulled down to the first level when being short-circuited, the control end that logic control circuit detects the short circuit of gate-controlled switch device and gate-controlled switch device at short-circuit detecting circuit adopts after the voltage signal driving of the first level, before the maximum duration that can bear short circuit current at gate-controlled switch device finishes, be controlled switching device damaged before, can turn-off gate-controlled switch device, that is to say, logic control circuit is when turn-offing gate-controlled switch device, gate-controlled switch device adopts the voltage signal of the first level to drive and is open-minded, because the first level is lower than second electrical level, therefore, adopt the drive circuit of the gate-controlled switch device that the embodiment of the present invention provides can be so that gate-controlled switch device not during short circuit, adopt the voltage signal of second electrical level to drive this gate-controlled switch break-over of device, and when the short circuit of gate-controlled switch device, adopt the voltage signal of the first level to drive this gate-controlled switch break-over of device, adopt the gate-controlled switch break-over of device of the voltage signal driving of the first level, thereby realize at gate-controlled switch device not during short circuit, reduce on-state voltage drop, and then reduction on-state loss, and realize when the short circuit of gate-controlled switch device, reduce short circuit current, thereby reduce the peak voltage while turn-offing, improve the functional reliability of gate-controlled switch device.
Alternatively, the drive circuit of the gate-controlled switch device that the embodiment of the present invention provides, as shown in Figure 2, drive level commutation circuit wherein comprises bleeder circuit 141 and the first switching circuit 142;
The first switching circuit 142, for the control end receiving the first index signal and gate-controlled switch device, when the level of the gate pole G of IGBT Q1 is higher than the first level, adopts the gate pole G of the voltage signal driving IGBT Q1 of the first level; And when receiving the second index signal, stop adopting the voltage signal of the first level to drive the gate pole G of IGBT Q1.
Alternatively, as shown in Figure 3, bleeder circuit comprises the first resistance R 1 and voltage stabilizing didoe DW1; The first resistance R 1 transfers to ground by the voltage signal V2 of the second electrical level receiving by voltage stabilizing didoe DW2, and the voltage signal of one end that the first resistance R 1 is connected with voltage stabilizing didoe DW2 is the voltage signal of the first level.
Alternatively, as shown in Figure 3, bleeder circuit also comprises storage capacitor C1, storage capacitor C1 is in parallel with voltage stabilizing didoe DW1, the capacitance of storage capacitor C1 is greater than the parasitic capacitance between the control end of gate-controlled switch device and the output of described gate-controlled switch device, is greater than the gate pole G of IGBT Q1 and the parasitic capacitance between emitter E.
Alternatively, as shown in Figure 3, the first switching circuit comprises the first switching tube (adopting NPN type the first triode T1 in Fig. 3, can certainly be other switching tube with similar functions) and the first diode D1; The control end of the first switching tube, the base stage of the first triode T1 receives the signal of short-circuit detecting circuit 13 outputs, triode T1 and the first diode D1 series connection;
The first switching tube, for the control end at described short-circuit detecting circuit 13 output the first index signals and gate-controlled switch device, open-minded when the level of the gate pole G of IGBT Q1 is higher than the first level, the level of the gate pole G of IGBT Q1 is pulled low to the first level; And turn-off when short-circuit detecting circuit 13 output the second index signal.
Like this when IGBT Q1 being detected and not being short-circuited, on storage capacitor C1, completed charging, when IGBT Q1 being detected and be short-circuited, the electric charge of the upper storage of storage capacitor C1 can be pulled down to the first level by the voltage of the gate pole G of IGBT Q1 rapidly, avoid when IGBT Q1 being detected and be short-circuited, owing to there is no the electric charge of storage capacitor storage in circuit, and the electric current that flows through the first switching circuit is smaller, make the duration that the second electrical level of the control end of gate-controlled switch device is pulled down to the first level be greater than the maximum duration that can bear short circuit current at gate-controlled switch device, make logic control circuit when turn-offing gate-controlled switch device, the level of the control end of gate-controlled switch device fails to be reduced to the first level, cause the short circuit current of gate-controlled switch device still larger.
Alternatively, the drive circuit of the gate-controlled switch device that the embodiment of the present invention provides, as shown in Figure 4, drive level commutation circuit also comprises second switch circuit 143; Second switch circuit 143, for the control end receiving the first index signal and gate-controlled switch device, when the level of the gate pole G of IGBT Q1 is lower than the first level, adopts the control end of the voltage signal driving gate-controlled switch device of the first level; And when receiving the second index signal, stopping adopting the voltage signal driving of the first level is the gate pole G of IGBT Q1.
Alternatively, as shown in Figure 5, the second switch circuit that the embodiment of the present invention provides comprises second switch pipe (adopting NPN type the second triode T2 in Fig. 3, can certainly be other switching tube with similar functions) and the second diode D2; The control end of second switch pipe, the base stage of the second triode T2 receives the signal of short-circuit detecting circuit 13 outputs, the second triode T2 and the second diode D2 series connection;
Second switch pipe, the second triode T2, for the control end at short-circuit detecting circuit 13 output the first index signals and gate-controlled switch device, open-minded when the level of the gate pole G of IGBT Q1 is lower than the first level; And turn-off when short-circuit detecting circuit 13 output the second index signal.
After gate-controlled switch device is turned off, the voltage of its control end reduces gradually, when this voltage, being down to the first level is below, the second triode T2 conducting, thereby reduce the underspeeding of voltage of the control end of gate-controlled switch device, reduce the turn-off speed of gate-controlled switch device, the peak current while further reducing its shutoff.In addition, because the control end at gate-controlled switch device drops into storage capacitor C1, the control end of gate-controlled switch device and the parasitic capacitance between output have been equivalent to increase, this can further reduce the underspeeding of voltage of the control end of gate-controlled switch device, thus the peak current when further reducing it and turn-offing.
Short-circuit detecting circuit can be exported high level signal as the first index signal, and output low level signal is as the second index signal; Also can output low level signal as the first index signal, output high level signal is as the second index signal.
At present the driving voltage of the gate pole of conventional IGBT is 15V, the drive circuit that adopts the embodiment of the present invention to provide, can by IGBT not the driving voltage of gate pole during short circuit be raised to 16V-18V, gate voltage during short circuit is down to 12V.
A kind of gate-controlled switch device cell that the embodiment of the present invention provides, comprises gate-controlled switch device, and the drive circuit of the gate-controlled switch device that provides of the embodiment of the present invention, for driving gate-controlled switch device.
Through the above description of the embodiments, those skilled in the art can be well understood to the embodiment of the present invention and can realize by hardware, and the mode that also can add necessary general hardware platform by software realizes.Understanding based on such, the technical scheme of the embodiment of the present invention can embody with the form of software product, it (can be CD-ROM that this software product can be stored in a non-volatile memory medium, USB flash disk, portable hard drive etc.) in, comprise some instructions with so that computer equipment (can be personal computer, server, or the network equipment etc.) carry out the method described in each embodiment of the present invention.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferred embodiment, the module in accompanying drawing or flow process might not be that enforcement the present invention is necessary.
It will be appreciated by those skilled in the art that the module in the device in embodiment can be distributed in the device of embodiment according to embodiment description, also can carry out respective change and be arranged in the one or more devices that are different from the present embodiment.The module of above-described embodiment can be merged into a module, also can further split into a plurality of submodules.
The invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (8)
1. a drive circuit for gate-controlled switch device, is characterized in that, comprises logic control circuit, amplifying circuit, short-circuit detecting circuit, drive level commutation circuit;
Described short-circuit detecting circuit, for when the short circuit of gate-controlled switch device being detected, exports the first index signal to drive level commutation circuit and logic control circuit; And gate-controlled switch device being detected not during short circuit, to drive level commutation circuit and logic control circuit, export the second index signal;
Drive level commutation circuit, for when receiving the first index signal, adopts the control end of the voltage signal driving gate-controlled switch device of the first level; And when receiving the second index signal, stop adopting the voltage signal of the first level to drive the control end of gate-controlled switch device;
Logic control circuit, for adopting the voltage signal of the first level to drive after the control end of gate-controlled switch device receiving the first index signal and drive level commutation circuit, turn-offs gate-controlled switch device; And when receiving the second index signal, to amplifying circuit output control signal, amplifying circuit is amplified this control signal under the driving of the voltage signal of second electrical level, control signal after amplification is for driving the control end of gate-controlled switch device, and in the control signal after amplification, can make the level of the signal that gate-controlled switch device opens is second electrical level; Wherein, the first level is lower than second electrical level, and the voltage signal of the first level can make gate-controlled switch device open-minded.
2. circuit as claimed in claim 1, is characterized in that, described drive level commutation circuit comprises bleeder circuit and the first switching circuit;
Bleeder circuit, for the voltage signal of second electrical level is carried out to dividing potential drop, and exports voltage signal after dividing potential drop as the voltage signal of the first level;
The first switching circuit, for the level of control end receiving the first index signal and gate-controlled switch device during higher than the first level, adopts the voltage signal of the first level to drive the control end of gate-controlled switch device; And when receiving the second index signal, stop adopting the voltage signal of the first level to drive the control end of gate-controlled switch device.
3. circuit as claimed in claim 2, is characterized in that, described bleeder circuit comprises the first resistance and voltage stabilizing didoe;
Described the first resistance transfers to ground by the voltage signal of the second electrical level receiving by described voltage stabilizing didoe, and the voltage signal of one end that described the first resistance is connected with described voltage stabilizing didoe is the voltage signal of the first level.
4. circuit as claimed in claim 3, is characterized in that, described bleeder circuit also comprises storage capacitor;
Described storage capacitor is in parallel with described voltage stabilizing didoe, and the capacitance of described storage capacitor is greater than the parasitic capacitance between the control end of described gate-controlled switch device and the output of described gate-controlled switch device.
5. circuit as claimed in claim 2, is characterized in that, described the first switching circuit comprises the first switching tube and the first diode; The control end of described the first switching tube receives the signal of short-circuit detecting circuit output, described the first switching tube and described the first diode series connection;
Described the first switching tube, open-minded during higher than the first level for the level of control end of exporting the first index signal and gate-controlled switch device at described short-circuit detecting circuit, the level of the control end of gate-controlled switch device is pulled low to the first level; And when exporting the second index signal, turn-offs described short-circuit detecting circuit.
6. circuit as claimed in claim 5, is characterized in that, described drive level commutation circuit also comprises second switch circuit;
Described second switch circuit, for the level of control end receiving the first index signal and gate-controlled switch device during lower than the first level, adopts the voltage signal of the first level to drive the control end of gate-controlled switch device; And when receiving the second index signal, stop adopting the voltage signal of the first level to drive the control end of gate-controlled switch device.
7. circuit as claimed in claim 6, is characterized in that, described second switch circuit comprises second switch pipe and the second diode; The control end of described second switch pipe receives the signal of short-circuit detecting circuit output, described second switch pipe and described the second diode series connection;
Described second switch pipe, open-minded during lower than the first level for the level of control end of exporting the first index signal and gate-controlled switch device at described short-circuit detecting circuit; And when exporting the second index signal, turn-offs described short-circuit detecting circuit.
8. a gate-controlled switch device cell, is characterized in that, comprises gate-controlled switch device, and the drive circuit of the gate-controlled switch device as described in claim 1-7 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310704238.8A CN103701445B (en) | 2013-12-19 | The drive circuit of a kind of gate-controlled switch device and gate-controlled switch device cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310704238.8A CN103701445B (en) | 2013-12-19 | The drive circuit of a kind of gate-controlled switch device and gate-controlled switch device cell |
Publications (2)
| Publication Number | Publication Date |
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| CN103701445A true CN103701445A (en) | 2014-04-02 |
| CN103701445B CN103701445B (en) | 2016-11-30 |
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| CN110798186A (en) * | 2018-08-01 | 2020-02-14 | 中车株洲电力机车研究所有限公司 | Driving device for power semiconductor device |
| CN110798186B (en) * | 2018-08-01 | 2023-09-08 | 中车株洲电力机车研究所有限公司 | Driving device for power semiconductor device |
| CN112684369A (en) * | 2020-11-25 | 2021-04-20 | 华帝股份有限公司 | Wind pressure switch detection system for preventing short circuit between wires of gas appliance |
| CN113507200A (en) * | 2021-08-20 | 2021-10-15 | 阳光电源股份有限公司 | Power converter and driving circuit thereof |
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