CN103700730A - Preparation method of solar diffusion selective emitter - Google Patents
Preparation method of solar diffusion selective emitter Download PDFInfo
- Publication number
- CN103700730A CN103700730A CN201310748311.1A CN201310748311A CN103700730A CN 103700730 A CN103700730 A CN 103700730A CN 201310748311 A CN201310748311 A CN 201310748311A CN 103700730 A CN103700730 A CN 103700730A
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- CN
- China
- Prior art keywords
- diffusion
- preparation
- region
- selective emitter
- phosphorus slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 12
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 1
- 238000009950 felting Methods 0.000 abstract 1
- 238000009776 industrial production Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the field of solar cells, in particular to a preparation method of a solar diffusion selective emitter. The preparation method comprises the following steps of firstly performing laser felting treatment on a silicon wafer; printing high-concentration phosphor thick liquid in an electrode grid line net region on the surface of the felted silicon wafer; performing short time diffusion in an atmosphere filled with POCL3: introducing source-carried gas for 3-5min and continuing to perform diffusion after the gas source is closed; forming a region printed with the phosphor thick liquid into a heavily-doped deep diffusion area, and forming a region not printed with the phosphor thick liquid into a lightly-doped shallow diffusion area, thereby preparing the selective emitter. Technologically, when the heavily-doped area is used as an electrode, ohmic contact is easily formed, and the bulk resistance is small, so that the series resistance can be reduced, and the filling factor FF can be improved; composition can be reduced, and collection for photon-generated carriers is increased, so that Isc is improved. In production, compared with the existing industrial production, the preparation method has the advantage that the diffusion time is short and the overall heat consumption is little in fast diffusion, so that the process cost can be further reduced.
Description
Technical field
The present invention relates to area of solar cell, particularly a kind of preparation method of solar energy diffusion selective emitter.
Background technology
Minimizing day by day along with fossil energy, the green energy resources such as solar energy become the focus of people's research, the developing direction of solar energy industry is low-cost at present, high efficiency, especially for crystal silicon battery, how further improving the efficiency of battery and reducing costs is current a great problem, and diffusion selective emitting electrode structure is one of the method for high-efficiency and low-cost that can realize in crystal silicon cell production technology, but this technology also exists some defects at present.
Summary of the invention
The present invention is directed to the problems referred to above, the preparation method that a kind of technique is simple, solar energy that be easy to realize spreads selective emitter is provided.
The present invention is achieved through the following technical solutions:
A preparation method for solar energy diffusion selective emitter, comprises following steps: first silicon chip is carried out to laser making herbs into wool processing; Then in the silicon chip surface gate electrode line mesh-like area after making herbs into wool, print high concentration phosphorus slurry; In being full of the atmosphere of POCL3, carry out short time diffusion, the first source of the taking gas of logical 3-5min, proceeds diffusion after closing source of the gas more again; The region of printing phosphorus slurry forms height and mixes dark diffusion region, and the region of not printing phosphorus slurry forms the low shallow diffusion region of mixing, and selective emitter is made.
The high concentration phosphorus slurry grid line width printed at front electrode is about 55-65 μ m.
The invention has the beneficial effects as follows: the preparation method of this solar energy diffusion selective emitter, technically, can be easier to form ohmic contact and volume resistance is little when electrode is done in high-doped zone, thereby reduced series resistance, improve fill factor, curve factor FF, can also reduce compoundly, increase the collection of photo-generated carrier, thereby improve Isc, aborning, with respect to existing suitability for industrialized production, because diffusion time in rapid diffusion is short, overall heat consumption is few, also can further reduce process costs.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Accompanying drawing 1 is the preparation method's of a kind of solar energy diffusion of the present invention selective emitter schematic diagram.
Embodiment
A preparation method for solar energy diffusion selective emitter, comprises following steps: first silicon chip is carried out to laser making herbs into wool processing; Then in the silicon chip surface gate electrode line mesh-like area after making herbs into wool, print high concentration phosphorus slurry, the high concentration phosphorus slurry grid line width printed at front electrode is about 55-65 μ m; In being full of the atmosphere of POCL3, carry out short time diffusion, the first source of the taking gas of logical 3-5min, proceeds diffusion after closing source of the gas more again; The region of printing phosphorus slurry forms height and mixes dark diffusion region, and the region of not printing phosphorus slurry forms the low shallow diffusion region of mixing, and selective emitter is made; Finally remove phosphorosilicate glass and periphery P-N knot, coated with antireflection film, printing aluminium back surface field, print positive electrode, sintering, classification and Detection operation, solar battery sheet is made again.
Claims (2)
1. a preparation method for solar energy diffusion selective emitter, comprises following steps: first silicon chip is carried out to laser making herbs into wool processing; Then in the silicon chip surface gate electrode line mesh-like area after making herbs into wool, print high concentration phosphorus slurry; In being full of the atmosphere of POCL3, carry out short time diffusion, the first source of the taking gas of logical 3-5min, proceeds diffusion after closing source of the gas more again; The region of printing phosphorus slurry forms height and mixes dark diffusion region, and the region of not printing phosphorus slurry forms the low shallow diffusion region of mixing, and selective emitter is made.
2. the preparation method of a kind of solar energy diffusion selective emitter according to claim 1, is characterized in that: the high concentration phosphorus slurry grid line width printed at front electrode is about 55-65 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310748311.1A CN103700730A (en) | 2013-12-31 | 2013-12-31 | Preparation method of solar diffusion selective emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310748311.1A CN103700730A (en) | 2013-12-31 | 2013-12-31 | Preparation method of solar diffusion selective emitter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103700730A true CN103700730A (en) | 2014-04-02 |
Family
ID=50362200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310748311.1A Pending CN103700730A (en) | 2013-12-31 | 2013-12-31 | Preparation method of solar diffusion selective emitter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103700730A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105017848A (en) * | 2014-04-27 | 2015-11-04 | 巨力新能源股份有限公司 | Silicon ink, preparing method of silicon ink and method for preparing crystalline silicon battery emitting electrode |
| CN109346535A (en) * | 2018-09-14 | 2019-02-15 | 江苏林洋光伏科技有限公司 | The method that laser prepares silicon solar cell selectivity flannelette and emitter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011140273A2 (en) * | 2010-05-04 | 2011-11-10 | Sionyx, Inc. | Photovoltaic devices and associated methods |
| CN102332492A (en) * | 2011-08-30 | 2012-01-25 | 绿华能源科技（杭州）有限公司 | Method for manufacturing solar battery with selective emitter |
| CN102732967A (en) * | 2012-06-01 | 2012-10-17 | 上饶光电高科技有限公司 | Diffusion technology for phosphorus slurry of selective emitter crystalline silicon solar cell |
| KR20130136772A (en) * | 2012-06-05 | 2013-12-13 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
-
2013
- 2013-12-31 CN CN201310748311.1A patent/CN103700730A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011140273A2 (en) * | 2010-05-04 | 2011-11-10 | Sionyx, Inc. | Photovoltaic devices and associated methods |
| CN102332492A (en) * | 2011-08-30 | 2012-01-25 | 绿华能源科技（杭州）有限公司 | Method for manufacturing solar battery with selective emitter |
| CN102732967A (en) * | 2012-06-01 | 2012-10-17 | 上饶光电高科技有限公司 | Diffusion technology for phosphorus slurry of selective emitter crystalline silicon solar cell |
| KR20130136772A (en) * | 2012-06-05 | 2013-12-13 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
Non-Patent Citations (2)
| Title |
|---|
| 吴宇平，张汉平，吴锋等: "《绿色电源材料》", 31 July 2008 * |
| 屈盛等: "选择性发射极太阳电池结构及其实现方法", 《中国建设动态（阳光能源）》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105017848A (en) * | 2014-04-27 | 2015-11-04 | 巨力新能源股份有限公司 | Silicon ink, preparing method of silicon ink and method for preparing crystalline silicon battery emitting electrode |
| CN109346535A (en) * | 2018-09-14 | 2019-02-15 | 江苏林洋光伏科技有限公司 | The method that laser prepares silicon solar cell selectivity flannelette and emitter |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140402 |