CN103700716A - 一种晶硅太阳能电池新型正面电极 - Google Patents
一种晶硅太阳能电池新型正面电极 Download PDFInfo
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- CN103700716A CN103700716A CN201310749424.3A CN201310749424A CN103700716A CN 103700716 A CN103700716 A CN 103700716A CN 201310749424 A CN201310749424 A CN 201310749424A CN 103700716 A CN103700716 A CN 103700716A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 239000013078 crystal Substances 0.000 title claims abstract description 21
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 16
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 229910017937 Ag-Ni Inorganic materials 0.000 claims abstract description 10
- 229910017984 Ag—Ni Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 238000007772 electroless plating Methods 0.000 claims abstract description 4
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910017982 Ag—Si Inorganic materials 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
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Abstract
本发明涉及晶硅太阳能电池领域，特别涉及一种晶硅太阳能电池新型正面电极。该晶硅太阳能电池新型正面电极，其特征是：所述新型正面电极位于晶硅电池n型面的刻槽内，为Cu-Ag-Ni系低银导电合金电极，以铜为基质，银与镍等作为添加元素，所述刻槽宽度d为45μm；刻槽采用激光镭射制备，所述Cu-Ag-Ni系低银导电合金电极采用无电镀法制备，制备出的新型正面电极由于物理强度提高且没有与硅本体形成合金，所以在晶硅电池片产生裂纹以后不会断开，可以继续起到收集电流的作用。本发明与银硅合金相比，可节约白银40%以上，测试采用新型电极的电池片电性能有较大提高，主要体现在开路电压和串联电阻的降低，填充因子也有所提高。
Description
技术领域
本发明涉及晶硅太阳能电池领域，特别涉及一种晶硅太阳能电池新型正面电极。
背景技术
传统太阳能电池制备工艺所制备出的太阳能电池正面电极是采用丝网印刷的方式把纯度为80%的银浆印刷到电池片的N型面，由于传统浆料的主要原料为银，其余为玻璃料和醇组成，在印刷完后通过烧结温度840℃时达到共晶点，形成Ag-Si合金，由于硅缺乏柔韧性，极容易产生微裂纹或碎片，丝网印刷的电极在电池片产生微裂纹或碎片后，无法继续收集电流，导致电池片部分失效或报废。
发明内容
本发明针对上述问题，提供了一种加工工艺简便，晶硅电池片产生微裂纹或碎片仍能收集电流的晶硅太阳能电池新型正面电极。
一种晶硅太阳能电池新型正面电极，其特征是：所述新型正面电极位于晶硅电池n型面的刻槽内，为Cu-Ag-Ni系低银导电合金电极，以铜为基质，银与镍等作为添加元素，所述刻槽宽度d为45μm。
所述刻槽采用激光镭射制备，镭射深度根据n型层的方阻决定，这样部分新型正面电极埋入在n型层内部，增加了接受电流的面积，减少了体电阻。
所述Cu-Ag-Ni系低银导电合金电极采用无电镀法制备，制备出的新型正面电极由于物理强度提高且没有与硅本体形成合金，所以在晶硅电池片产生裂纹以后不会断开，可以继续起到收集电流的作用。
本发明的有益效果是：本发明采用的Cu-Ag-Ni系低银导电合金电极，选择了能大大提高合金强度、降低体电阻率、提高抗氧化性能的银与镍等作为添加元素；与银硅合金相比，可节约白银40%以上，显著降低成本，且Cu-Ag-Ni系低银导电合金加工工艺简便，适用于大批量生产；经测试采用新型电极的电池片电性能有较大提高，主要体现在开路电压和串联电阻的降低，填充因子也有所提高。
附图说明
下面结合附图对本发明作进一步的说明。
附图1为现有技术制备的晶硅太阳能电池正面电极断裂结构示意图；
附图2为本发明一种晶硅太阳能电池新型正面电极的使用结构示意图；
附图3为本发明一种晶硅太阳能电池新型正面电极在电池片断裂时的放大示意图。
图中，1新型正面电极，2刻槽，3裂缝。
具体实施方式
附图为本发明的一种具体实施例。该晶硅太阳能电池新型正面电极，其特征是：所述新型正面电极1位于晶硅电池n型面的刻槽2内，为Cu-Ag-Ni系低银导电合金电极，以铜为基质，银与镍等作为添加元素，所述刻槽2宽度d为45μm，仅为传统电极宽度的四分之三；刻槽2采用激光镭射制备，镭射深度根据n型层的方阻决定，这样部分新型正面电极1埋入在n型层内部，增加了接受电流的面积，减少了体电阻；所述Cu-Ag-Ni系低银导电合金电极采用无电镀法制备，制备出的新型正面电极1由于物理强度提高且没有与硅本体形成合金，所以在晶硅电池片产生裂缝3以后不会断开，可以继续起到收集电流的作用。本发明与银硅合金相比，节约白银40%以上，显著降低了成本；低银合金加工工艺简便，适用于大批量生产；经测试采用新型电极的电池片电性能有较大提高，主要体现在开路电压和串联电阻的降低，填充因子也有所提高。
Claims (3)
1.一种晶硅太阳能电池新型正面电极，其特征是：所述新型正面电极(1)位于晶硅电池n型面的刻槽(2)内，为Cu-Ag-Ni系低银导电合金电极，以铜为基质，银与镍等作为添加元素，所述刻槽(2)宽度d为45μm。
2.根据权利要求1所述的晶硅太阳能电池新型正面电极，其特征是:所述刻槽(2)采用激光镭射制备。
3.根据权利要求1所述的晶硅太阳能电池新型正面电极，其特征是:所述Cu-Ag-Ni系低银导电合金电极采用无电镀法制备。
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| CN104465804A (zh) * | 2014-11-24 | 2015-03-25 | 华东师范大学 | 一种可提高太阳能电池效率和稳定性的合金电极 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101740659A (zh) * | 2008-11-06 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 埋栅太阳能电池的制造方法 |
| CN102157624A (zh) * | 2011-03-14 | 2011-08-17 | 中节能太阳能科技有限公司 | 一种硅太阳能电池及其制备方法 |
| CN102754223A (zh) * | 2010-04-13 | 2012-10-24 | 京瓷株式会社 | 太阳能电池元件及其制造方法 |
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| CN101740659A (zh) * | 2008-11-06 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 埋栅太阳能电池的制造方法 |
| CN102754223A (zh) * | 2010-04-13 | 2012-10-24 | 京瓷株式会社 | 太阳能电池元件及其制造方法 |
| CN102157624A (zh) * | 2011-03-14 | 2011-08-17 | 中节能太阳能科技有限公司 | 一种硅太阳能电池及其制备方法 |
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| CN104465804A (zh) * | 2014-11-24 | 2015-03-25 | 华东师范大学 | 一种可提高太阳能电池效率和稳定性的合金电极 |
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