CN103684372B - 向半导体开关器件的栅极提供驱动信号的装置及方法 - Google Patents
向半导体开关器件的栅极提供驱动信号的装置及方法 Download PDFInfo
- Publication number
- CN103684372B CN103684372B CN201310430793.6A CN201310430793A CN103684372B CN 103684372 B CN103684372 B CN 103684372B CN 201310430793 A CN201310430793 A CN 201310430793A CN 103684372 B CN103684372 B CN 103684372B
- Authority
- CN
- China
- Prior art keywords
- grid
- semiconductor switch
- grid impedance
- switch device
- impedance circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000013500 data storage Methods 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims description 25
- 230000005611 electricity Effects 0.000 claims description 4
- 238000013499 data model Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000009194 climbing Effects 0.000 description 3
- 208000025599 Heat Stress disease Diseases 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1216743.3 | 2012-09-19 | ||
| GB1216743.3A GB2508129B (en) | 2012-09-19 | 2012-09-19 | Semiconductor device driving unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103684372A CN103684372A (zh) | 2014-03-26 |
| CN103684372B true CN103684372B (zh) | 2017-08-29 |
Family
ID=47144534
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310430793.6A Expired - Fee Related CN103684372B (zh) | 2012-09-19 | 2013-09-18 | 向半导体开关器件的栅极提供驱动信号的装置及方法 |
| CN201320582300.6U Expired - Fee Related CN203691215U (zh) | 2012-09-19 | 2013-09-18 | 一种半导体器件驱动装置及包含其的变速传动装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320582300.6U Expired - Fee Related CN203691215U (zh) | 2012-09-19 | 2013-09-18 | 一种半导体器件驱动装置及包含其的变速传动装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8970263B2 (https=) |
| CN (2) | CN103684372B (https=) |
| GB (1) | GB2508129B (https=) |
| IN (1) | IN2013MU02540A (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108199704A (zh) * | 2018-01-26 | 2018-06-22 | 中国矿业大学 | 一种感性负载下mosfet开关控制方法 |
| FR3105653B1 (fr) * | 2019-12-22 | 2022-12-30 | Valeo Equip Electr Moteur | Système d’interrupteur, bras de commutation et carte electronique comprenant un tel bras de commutation |
| CN113470590A (zh) | 2021-07-15 | 2021-10-01 | Tcl华星光电技术有限公司 | 逻辑电路和显示面板 |
| CN116317480A (zh) * | 2023-03-28 | 2023-06-23 | 重庆大学 | 一种通过降低栅极电阻提高功率器件过载的栅极驱动电路 |
| CN116366044B (zh) * | 2023-03-28 | 2024-04-30 | 重庆大学 | 一种通过调节栅极电压提高功率器件过载的栅极驱动电路 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088221A (zh) * | 2004-04-26 | 2007-12-12 | 勒图尔纽科技钻孔系统公司 | 逆变器的开关器件的自适应栅极驱动 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03286619A (ja) * | 1990-04-02 | 1991-12-17 | Mitsubishi Electric Corp | 絶縁ゲート形半導体装置のゲート駆動回路および該回路を用いたフラッシュ制御装置 |
| JP3373704B2 (ja) * | 1995-08-25 | 2003-02-04 | 三菱電機株式会社 | 絶縁ゲートトランジスタ駆動回路 |
| JP3421507B2 (ja) * | 1996-07-05 | 2003-06-30 | 三菱電機株式会社 | 半導体素子の駆動回路 |
| JP3161589B2 (ja) * | 1996-10-17 | 2001-04-25 | 富士電機株式会社 | 電力変換器のゲート駆動回路 |
| JP3432425B2 (ja) * | 1998-08-05 | 2003-08-04 | 株式会社東芝 | ゲート回路 |
| KR200229676Y1 (ko) * | 2000-11-14 | 2001-07-19 | 엘지산전 주식회사 | 아이지비티 인버터의 게이트 구동회로 |
| US6943588B1 (en) * | 2003-09-24 | 2005-09-13 | Altera Corporation | Dynamically-adjustable differential output drivers |
| JP4223379B2 (ja) * | 2003-12-10 | 2009-02-12 | 三菱電機株式会社 | スイッチングデバイスの制御装置およびモーターの駆動回路の制御装置 |
| US7667524B2 (en) * | 2004-11-05 | 2010-02-23 | International Rectifier Corporation | Driver circuit and method with reduced DI/DT and having delay compensation |
| JP4315125B2 (ja) | 2005-05-11 | 2009-08-19 | トヨタ自動車株式会社 | 電圧駆動型半導体素子の駆動装置 |
| JP2007228447A (ja) * | 2006-02-27 | 2007-09-06 | Hitachi Ltd | スイッチング素子のゲート駆動回路 |
| US8080988B2 (en) * | 2008-06-18 | 2011-12-20 | Active-Semi, Inc. | Switch driver with low impedance initial drive and higher impedance final drive |
| US8299820B2 (en) * | 2008-09-30 | 2012-10-30 | Infineon Technologies Austria Ag | Circuit including a resistor arrangement for actuation of a transistor |
| US8264256B2 (en) * | 2008-10-15 | 2012-09-11 | Infineon Technologies Austria Ag | Driver and method for driving a device |
| US20110273220A1 (en) * | 2010-05-04 | 2011-11-10 | Feng Lin | Optimal mosfet driver circuit for reducing electromagnetic interference and noise |
| KR101449083B1 (ko) * | 2010-05-06 | 2014-10-13 | 엘에스산전 주식회사 | 스위칭 게이트 드라이브 |
| US8749278B2 (en) | 2010-08-09 | 2014-06-10 | Honda Motor Co., Ltd. | Semiconductor device driving unit and method |
| JP5522094B2 (ja) * | 2011-03-09 | 2014-06-18 | 三菱電機株式会社 | ゲート回路 |
-
2012
- 2012-09-19 GB GB1216743.3A patent/GB2508129B/en not_active Expired - Fee Related
-
2013
- 2013-08-01 IN IN2540MU2013 patent/IN2013MU02540A/en unknown
- 2013-09-18 CN CN201310430793.6A patent/CN103684372B/zh not_active Expired - Fee Related
- 2013-09-18 CN CN201320582300.6U patent/CN203691215U/zh not_active Expired - Fee Related
- 2013-09-18 US US14/030,402 patent/US8970263B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088221A (zh) * | 2004-04-26 | 2007-12-12 | 勒图尔纽科技钻孔系统公司 | 逆变器的开关器件的自适应栅极驱动 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8970263B2 (en) | 2015-03-03 |
| IN2013MU02540A (https=) | 2015-06-12 |
| US20140077848A1 (en) | 2014-03-20 |
| GB201216743D0 (en) | 2012-10-31 |
| CN103684372A (zh) | 2014-03-26 |
| CN203691215U (zh) | 2014-07-02 |
| GB2508129B (en) | 2020-02-26 |
| GB2508129A (en) | 2014-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: British Powys Applicant after: Nideke Control Technology Co. Ltd. Address before: British Powys Applicant before: Control Tech Ltd |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170829 Termination date: 20200918 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |