CN103684372B - 向半导体开关器件的栅极提供驱动信号的装置及方法 - Google Patents

向半导体开关器件的栅极提供驱动信号的装置及方法 Download PDF

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Publication number
CN103684372B
CN103684372B CN201310430793.6A CN201310430793A CN103684372B CN 103684372 B CN103684372 B CN 103684372B CN 201310430793 A CN201310430793 A CN 201310430793A CN 103684372 B CN103684372 B CN 103684372B
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China
Prior art keywords
grid
semiconductor switch
grid impedance
switch device
impedance circuits
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Expired - Fee Related
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CN201310430793.6A
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English (en)
Chinese (zh)
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CN103684372A (zh
Inventor
理查德·塞缪尔·吉布森
理查德·马克·维恩
罗伯特·安东尼·卡特尔
罗伯特·格温·威廉姆斯
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Nidec Control Techniques Ltd
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Nidec Control Techniques Ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/44Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/168Modifications for eliminating interference voltages or currents in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163Soft switching

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
CN201310430793.6A 2012-09-19 2013-09-18 向半导体开关器件的栅极提供驱动信号的装置及方法 Expired - Fee Related CN103684372B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1216743.3 2012-09-19
GB1216743.3A GB2508129B (en) 2012-09-19 2012-09-19 Semiconductor device driving unit

Publications (2)

Publication Number Publication Date
CN103684372A CN103684372A (zh) 2014-03-26
CN103684372B true CN103684372B (zh) 2017-08-29

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201310430793.6A Expired - Fee Related CN103684372B (zh) 2012-09-19 2013-09-18 向半导体开关器件的栅极提供驱动信号的装置及方法
CN201320582300.6U Expired - Fee Related CN203691215U (zh) 2012-09-19 2013-09-18 一种半导体器件驱动装置及包含其的变速传动装置

Family Applications After (1)

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CN201320582300.6U Expired - Fee Related CN203691215U (zh) 2012-09-19 2013-09-18 一种半导体器件驱动装置及包含其的变速传动装置

Country Status (4)

Country Link
US (1) US8970263B2 (https=)
CN (2) CN103684372B (https=)
GB (1) GB2508129B (https=)
IN (1) IN2013MU02540A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108199704A (zh) * 2018-01-26 2018-06-22 中国矿业大学 一种感性负载下mosfet开关控制方法
FR3105653B1 (fr) * 2019-12-22 2022-12-30 Valeo Equip Electr Moteur Système d’interrupteur, bras de commutation et carte electronique comprenant un tel bras de commutation
CN113470590A (zh) 2021-07-15 2021-10-01 Tcl华星光电技术有限公司 逻辑电路和显示面板
CN116317480A (zh) * 2023-03-28 2023-06-23 重庆大学 一种通过降低栅极电阻提高功率器件过载的栅极驱动电路
CN116366044B (zh) * 2023-03-28 2024-04-30 重庆大学 一种通过调节栅极电压提高功率器件过载的栅极驱动电路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101088221A (zh) * 2004-04-26 2007-12-12 勒图尔纽科技钻孔系统公司 逆变器的开关器件的自适应栅极驱动

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03286619A (ja) * 1990-04-02 1991-12-17 Mitsubishi Electric Corp 絶縁ゲート形半導体装置のゲート駆動回路および該回路を用いたフラッシュ制御装置
JP3373704B2 (ja) * 1995-08-25 2003-02-04 三菱電機株式会社 絶縁ゲートトランジスタ駆動回路
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
JP3161589B2 (ja) * 1996-10-17 2001-04-25 富士電機株式会社 電力変換器のゲート駆動回路
JP3432425B2 (ja) * 1998-08-05 2003-08-04 株式会社東芝 ゲート回路
KR200229676Y1 (ko) * 2000-11-14 2001-07-19 엘지산전 주식회사 아이지비티 인버터의 게이트 구동회로
US6943588B1 (en) * 2003-09-24 2005-09-13 Altera Corporation Dynamically-adjustable differential output drivers
JP4223379B2 (ja) * 2003-12-10 2009-02-12 三菱電機株式会社 スイッチングデバイスの制御装置およびモーターの駆動回路の制御装置
US7667524B2 (en) * 2004-11-05 2010-02-23 International Rectifier Corporation Driver circuit and method with reduced DI/DT and having delay compensation
JP4315125B2 (ja) 2005-05-11 2009-08-19 トヨタ自動車株式会社 電圧駆動型半導体素子の駆動装置
JP2007228447A (ja) * 2006-02-27 2007-09-06 Hitachi Ltd スイッチング素子のゲート駆動回路
US8080988B2 (en) * 2008-06-18 2011-12-20 Active-Semi, Inc. Switch driver with low impedance initial drive and higher impedance final drive
US8299820B2 (en) * 2008-09-30 2012-10-30 Infineon Technologies Austria Ag Circuit including a resistor arrangement for actuation of a transistor
US8264256B2 (en) * 2008-10-15 2012-09-11 Infineon Technologies Austria Ag Driver and method for driving a device
US20110273220A1 (en) * 2010-05-04 2011-11-10 Feng Lin Optimal mosfet driver circuit for reducing electromagnetic interference and noise
KR101449083B1 (ko) * 2010-05-06 2014-10-13 엘에스산전 주식회사 스위칭 게이트 드라이브
US8749278B2 (en) 2010-08-09 2014-06-10 Honda Motor Co., Ltd. Semiconductor device driving unit and method
JP5522094B2 (ja) * 2011-03-09 2014-06-18 三菱電機株式会社 ゲート回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101088221A (zh) * 2004-04-26 2007-12-12 勒图尔纽科技钻孔系统公司 逆变器的开关器件的自适应栅极驱动

Also Published As

Publication number Publication date
US8970263B2 (en) 2015-03-03
IN2013MU02540A (https=) 2015-06-12
US20140077848A1 (en) 2014-03-20
GB201216743D0 (en) 2012-10-31
CN103684372A (zh) 2014-03-26
CN203691215U (zh) 2014-07-02
GB2508129B (en) 2020-02-26
GB2508129A (en) 2014-05-28

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