CN103683910A - Charge pump circuit of high-speed switch circuit - Google Patents
Charge pump circuit of high-speed switch circuit Download PDFInfo
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- CN103683910A CN103683910A CN201210338126.0A CN201210338126A CN103683910A CN 103683910 A CN103683910 A CN 103683910A CN 201210338126 A CN201210338126 A CN 201210338126A CN 103683910 A CN103683910 A CN 103683910A
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Abstract
The invention discloses a charge pump circuit of a high-speed switch circuit. The circuit comprises a PNP (Plug-and-Play) type first bipolar transistor (P1), a second bipolar transistor (P2), a third bipolar transistor (P3), a fourth bipolar transistor (P4), a NPN (Negative-Positive-Negative) fifth bipolar transistor (N5), a sixth bipolar transistor (N6), a seventh bipolar transistor (N7), an eighth bipolar transistor (N8), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a constant current source (JI); a first voltage source (JV1), a second voltage source (JV2), a P-type MOS (Metal Oxide Semiconductor) pipe (MP1) and a N-type MOS pipe (MN1). The charge pump circuit has the benefits that due to the circuit structure, the charge transmission time is reduced, the speed is improved, and input voltage has a larger output change range.
Description
Technical field
The present invention relates to a kind of charge pump circuit of high-speed switching circuit, especially a kind of charge pump circuit that is applicable to the high-speed switching circuit of high speed in high-speed switching circuit, high output voltage scope.
Background technology
Charge pump, also referred to as switched capacitor voltage changer, it can make input voltage raise or reduce, also can be for generation of negative voltage.It is the circuit of commonly using in switching circuit.In some high-speed switching circuits, require the speed of charge pump generally higher, and corresponding speed require very fast.The charge pump of prior art is to control in a certain way the charging and discharging of flying capacitor by its inner FET switch arrays, thereby makes input voltage with certain factor (0.5,2 or 3) multiplication or reduce, thereby obtains needed output voltage.The charge pump circuit corresponding speed of the high-speed switching circuit of this structure is slower, can not meet the requirement of Modern High-Speed switching circuit to the charge pump circuit of high speed high-speed switching circuit, the ratio of voltage rising and reduction be can not meet to the requirement of present circuit.
Summary of the invention
Goal of the invention of the present invention is: for the problem of above-mentioned existence, provide a kind of QA charge pump.
The technical solution used in the present invention is such: a kind of charge pump circuit of high-speed switching circuit, this circuit comprises: the first bipolar transistor of positive-negative-positive, the second bipolar transistor, the 3rd bipolar transistor, the 4th bipolar transistor, the 5th bipolar transistor of NPN type, the 6th bipolar transistor, the 7th bipolar transistor, the 8th bipolar transistor, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, constant-current source, the first voltage source, second voltage source, P type metal-oxide-semiconductor and N-type metal-oxide-semiconductor.
Wherein, described the first bipolar transistor is the bipolar transistor that parameter is identical with the 3rd bipolar transistor, described the second bipolar transistor is the bipolar transistor that parameter is identical with the 4th bipolar transistor, described the 5th bipolar transistor is the bipolar transistor that parameter is identical with the 7th bipolar transistor, described the 6th bipolar transistor is the bipolar transistor that parameter is identical with the 8th bipolar transistor, described the first resistance, the second resistance, the 3rd resistance is the resistance that parameter is identical with the 4th resistance, described the first voltage source is the voltage source that parameter is identical with second voltage source.
The source electrode of described the first bipolar transistor connects ambipolar positive voltage by the first resistance, and collector electrode is connected with the base stage of the second bipolar transistor, and base stage is connected with the base stage of the 3rd bipolar transistor with the source electrode of the second bipolar transistor.The grounded collector of described the second bipolar transistor.The source electrode of described the 3rd bipolar transistor connects ambipolar positive voltage by the second resistance, and collector electrode is connected with the drain electrode of N-type metal-oxide-semiconductor with the source electrode of the 4th bipolar transistor.The collector electrode of described the 4th bipolar transistor connects output, and base stage is connected with ambipolar positive voltage by the first voltage source; The positive terminal of described the first voltage source connects ambipolar positive voltage, and negative pole end connects the base stage of the 4th bipolar transistor.The source ground of described N-type metal-oxide-semiconductor, grid connects first input end.
The collector electrode of described the 5th bipolar transistor connects ambipolar positive voltage, and base stage connects the collector electrode of the 6th bipolar transistor, and source electrode is connected with the base stage of the 8th bipolar transistor with the base stage of the 6th bipolar transistor respectively.The source electrode of described the 6th bipolar transistor is by the 3rd grounding through resistance.The collector electrode of described the 7th bipolar transistor connects output, and source electrode is connected with the drain electrode of P type metal-oxide-semiconductor with the collector electrode of the 8th bipolar transistor respectively, and base stage is by second voltage source ground connection; The positive terminal in described second voltage source connects the base stage of the 7th bipolar transistor, negative pole end ground connection.The source electrode of described the 8th bipolar transistor is by the 4th grounding through resistance.The source electrode of described P type metal-oxide-semiconductor connects MOS positive voltage, and grid connects the second input.One end of described constant-current source connects the base stage of collector electrode and second bipolar transistor of the first bipolar transistor, and the other end connects the base stage of the 5th bipolar transistor and the collector electrode of the 6th bipolar transistor.
In sum, owing to having adopted technique scheme, the invention has the beneficial effects as follows: sort circuit structure, reduced the charge-conduction time, improved speed; Can make input voltage have larger exporting change scope.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of the charge pump circuit of high-speed switching circuit of the present invention.
embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
As shown in Figure 1, be the circuit theory diagrams of the charge pump circuit of high-speed switching circuit of the present invention.
A charge pump circuit for high-speed switching circuit, this circuit comprises: four positive-negative-positive bipolar transistors, four bipolar npn transistor npn npns, two voltage sources, a constant-current source, four resistance, N-type metal-oxide-semiconductor and P type metal-oxide-semiconductors.Wherein four positive-negative-positive bipolar transistors are respectively: positive-negative-positive the first bipolar transistor P1, the second bipolar transistor P2, the 3rd bipolar transistor P3, the 4th bipolar transistor P4; Four bipolar npn transistor npn npns are respectively: the 5th bipolar transistor N5, the 6th bipolar transistor N6, the 7th bipolar transistor N7, the 8th bipolar transistor N8; Four resistance are respectively: the first resistance R 1, the second resistance R 2, the three resistance R 3, the four resistance R 4; Two voltage sources are respectively: the first voltage source JV1, second voltage source JV2.
Annexation between above-mentioned each electronic devices and components is:
The source electrode of the first bipolar transistor P1 connects ambipolar positive voltage Vcc by the first resistance R 1, and collector electrode is connected with the base stage of the second bipolar transistor P2, and base stage is connected with the base stage of the 3rd bipolar transistor P3 with the source electrode of the second bipolar transistor P2; The grounded collector of described the second bipolar transistor P2; The source electrode of described the 3rd bipolar transistor P3 connects ambipolar positive voltage Vcc by the second resistance R 2, and collector electrode is connected with the drain electrode of N-type metal-oxide-semiconductor MN1 with the source electrode of the 4th bipolar transistor P4; The collector electrode of described the 4th bipolar transistor P4 connects output O1, and base stage is connected with ambipolar positive voltage Vcc by the first voltage source JV1; The positive terminal of described the first voltage source JV1 connects ambipolar positive voltage Vcc, and negative pole end connects the base stage of the 4th bipolar transistor P4; The source ground of described N-type metal-oxide-semiconductor MN1, grid meets first input end I1; The collector electrode of described the 5th bipolar transistor N5 connects ambipolar positive voltage Vcc, and base stage connects the collector electrode of the 6th bipolar transistor N6, and source electrode is connected with the base stage of the 8th bipolar transistor N8 with the base stage of the 6th bipolar transistor N6 respectively; The source electrode of described the 6th bipolar transistor N6 is by the 3rd resistance R 3 ground connection; The collector electrode of described the 7th bipolar transistor N7 connects output O1, and source electrode is connected with the drain electrode of P type metal-oxide-semiconductor MP1 with the collector electrode of the 8th bipolar transistor N8 respectively, and base stage is by second voltage source JV2 ground connection; The positive terminal of described second voltage source JV2 connects the base stage of the 7th bipolar transistor N7, negative pole end ground connection; The source electrode of described the 8th bipolar transistor N8 is by the 4th resistance R 4 ground connection; The source electrode of P type metal-oxide-semiconductor MP1 connects MOS positive voltage Vdd, and grid connects the second input I2; One end of constant-current source JI connects the collector electrode of the first bipolar transistor P1 and the base stage of the second bipolar transistor P2, and the other end connects the base stage of the 5th bipolar transistor N5 and the collector electrode of the 6th bipolar transistor P6.
In above-mentioned circuit, described the first bipolar transistor P1 is the bipolar transistor that parameter is identical with the 3rd bipolar transistor P3.
In above-mentioned circuit, described the second bipolar transistor P2 is the bipolar transistor that parameter is identical with the 4th bipolar transistor P4.
In above-mentioned circuit, described the 5th bipolar transistor N5 is the bipolar transistor that parameter is identical with the 7th bipolar transistor N7.
In above-mentioned circuit, described the 6th bipolar transistor N6 is the bipolar transistor that parameter is identical with the 8th bipolar transistor N8.
In above-mentioned circuit, described the first resistance R 1, the second resistance R 2, the 3rd resistance R 3 are the resistance that parameter is identical with the 4th resistance R 4.
In above-mentioned circuit, the first voltage source JV1 is the voltage source that parameter is identical with second voltage source J2.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (1)
1. the charge pump circuit of a high-speed switching circuit, it is characterized in that, this circuit comprises: first bipolar transistor (P1) of positive-negative-positive, the second bipolar transistor (P2), the 3rd bipolar transistor (P3), the 4th bipolar transistor (P4), the 5th bipolar transistor (N5) of NPN type, the 6th bipolar transistor (N6), the 7th bipolar transistor (N7), the 8th bipolar transistor (N8), the first resistance (R1), the second resistance (R2), the 3rd resistance (R3), the 4th resistance (R4), constant-current source (JI), the first voltage source (JV1), second voltage source (JV2), P type metal-oxide-semiconductor (MP1) and N-type metal-oxide-semiconductor (MN1), described the first bipolar transistor (P1) is the bipolar transistor that parameter is identical with the 3rd bipolar transistor (P3), described the second bipolar transistor (P2) is the bipolar transistor that parameter is identical with the 4th bipolar transistor (P4), described the 5th bipolar transistor (N5) is the bipolar transistor that parameter is identical with the 7th bipolar transistor (N7), described the 6th bipolar transistor (N6) is the bipolar transistor that parameter is identical with the 8th bipolar transistor (N8), described the first resistance (R1), the second resistance (R2), the 3rd resistance (R3) is the resistance that parameter is identical with the 4th resistance (R4), described the first voltage source (JV1) is the voltage source that parameter is identical with second voltage source (J2),
The source electrode of described the first bipolar transistor (P1) connects ambipolar positive voltage (Vcc) by the first resistance (R1), collector electrode is connected with the base stage of the second bipolar transistor (P2), and base stage is connected with the base stage of the 3rd bipolar transistor (P3) with the source electrode of the second bipolar transistor (P2);
The grounded collector of described the second bipolar transistor (P2);
The source electrode of described the 3rd bipolar transistor (P3) connects ambipolar positive voltage (Vcc) by the second resistance (R2), and collector electrode is connected with the drain electrode of N-type metal-oxide-semiconductor (MN1) with the source electrode of the 4th bipolar transistor (P4);
The collector electrode of described the 4th bipolar transistor (P4) connects output (O1), and base stage is connected with ambipolar positive voltage (Vcc) by the first voltage source (JV1); The positive terminal of described the first voltage source (JV1) connects ambipolar positive voltage (Vcc), and negative pole end connects the base stage of the 4th bipolar transistor (P4);
The source ground of described N-type metal-oxide-semiconductor (MN1), grid connects first input end (I1);
The collector electrode of described the 5th bipolar transistor (N5) connects ambipolar positive voltage (Vcc), base stage connects the collector electrode of the 6th bipolar transistor (N6), and source electrode is connected with the base stage of the 8th bipolar transistor (N8) with the base stage of the 6th bipolar transistor (N6) respectively;
The source electrode of described the 6th bipolar transistor (N6) is by the 3rd resistance (R3) ground connection;
The collector electrode of described the 7th bipolar transistor (N7) connects output (O1), and source electrode is connected with the drain electrode of P type metal-oxide-semiconductor (MP1) with the collector electrode of the 8th bipolar transistor (N8) respectively, and base stage is by second voltage source (JV2) ground connection; The positive terminal in described second voltage source (JV2) connects the base stage of the 7th bipolar transistor (N7), negative pole end ground connection;
The source electrode of described the 8th bipolar transistor (N8) is by the 4th resistance (R4) ground connection;
The source electrode of P type metal-oxide-semiconductor (MP1) connects MOS positive voltage (Vdd), and grid connects the second input (I2);
One end of constant-current source (JI) connects the base stage of collector electrode and second bipolar transistor (P2) of the first bipolar transistor (P1), and the other end connects the base stage of the 5th bipolar transistor (N5) and the collector electrode of the 6th bipolar transistor (P6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210338126.0A CN103683910A (en) | 2012-09-13 | 2012-09-13 | Charge pump circuit of high-speed switch circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210338126.0A CN103683910A (en) | 2012-09-13 | 2012-09-13 | Charge pump circuit of high-speed switch circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103683910A true CN103683910A (en) | 2014-03-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210338126.0A Pending CN103683910A (en) | 2012-09-13 | 2012-09-13 | Charge pump circuit of high-speed switch circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103683910A (en) |
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2012
- 2012-09-13 CN CN201210338126.0A patent/CN103683910A/en active Pending
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Application publication date: 20140326 |