CN103681533A - 包括块体金属的扇出封装件 - Google Patents

包括块体金属的扇出封装件 Download PDF

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CN103681533A
CN103681533A CN201210489072.8A CN201210489072A CN103681533A CN 103681533 A CN103681533 A CN 103681533A CN 201210489072 A CN201210489072 A CN 201210489072A CN 103681533 A CN103681533 A CN 103681533A
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bulk metal
metal parts
tav
polymer
packaging part
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CN103681533B (zh
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胡延章
黄昶嘉
萧景文
陈承先
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明公开了一种含块体金属的扇出封装件。器件包括：聚合物；器件管芯，位于聚合物中；和多个组件通孔(TAV)，从聚合物的顶面延伸到聚合物的底面。块体金属部件位于聚合物中且其所具有的顶视图尺寸大于多个TAV中的每一个TAV的顶视图尺寸。块体金属部件是电浮动。聚合物、器件管芯、多个TAV和块体金属部件是封装件的部分。

Description

包括块体金属的扇出封装件
技术领域
本公开总体上涉及半导体领域，更具体地，涉及一种包括块体金属的扇出封装件。 
背景技术
在封装含集成电路的器件管芯的过程中，可以在晶圆级的模塑料中模制器件管芯，并且形成重布线以连接至器件管芯。为了在模塑料中模制器件管芯，要先将器件管芯安装在玻璃晶圆上。将组合的玻璃晶圆、器件管芯和模塑料用作复合晶圆，然后进行传送。在对复合晶圆进行工艺步骤的过程中，和常规的半导体晶圆一样，复合晶圆被固定在工作盘上。 
因为模塑料的热膨胀系数(CTE)和玻璃晶圆的CTE存在明显的差异，所以复合晶圆具有翘曲度(warpage)。翘曲度可能高达大约1.5mm或更高。这就给拿起和传送复合晶圆的工具造成了麻烦。例如，可以使用吸入压头拿起复合晶圆，然后将其放置在工作盘上。由于翘曲度，所以在吸入压头和复合晶圆之间很难形成真空，以利用真空将复合晶圆吸附在吸入压头上。 
发明内容
为解决上述问题，本发明提供了一种封装件，包括：聚合物；器件管芯，位于聚合物中；多个组件通孔(TAV)，从聚合物的顶面延伸到聚合物的底面；以及第一块体金属部件，位于聚合物中，并且从上向下看时，第一块体金属部件的尺寸大于多个TAV中的每一个的尺寸。 
其中，第一块体金属部件邻近封装件的边缘。 
其中，第一块体金属部件的边缘与封装件的边缘对准。 
其中，从上向下看时，封装件中的所有块体金属部件的总面积大于封装件的总面积的大约5％。 
该封装件进一步包括：位于聚合物中的第二块体金属部件，第二块体金属部件电接地。 
其中，多个TAV的顶端与器件管芯的电连接件的顶端和第一块体金属部件的顶端基本平齐，并且多个TAV的底端与第一块体金属部件的底端平齐。 
其中，多个TAV的顶端与器件管芯的电连接件的顶端基本平齐，第一块体金属部件的顶端低于多个TAV的顶端，并且多个TAV的底端与第一块体金属部件的底端平齐。 
该封装件进一步包括：载体，位于器件管芯和聚合物的下方；以及多个器件管芯，位于聚合物中，从上往下看时，第一块体金属部件的尺寸基本等于载体的尺寸，并且第一块体金属部件连续在多个器件管芯之间延伸。 
此外，还提供给了一种封装件，包括：聚合物；器件管芯，位于聚合物中；多个组件通孔(TAV)，每个TAV均从聚合物的顶面延伸到聚合物的底面；以及第一块体金属部件，位于聚合物中，第一块体金属部件的边缘与封装件的边缘对准。 
其中，多个TAV的顶端、器件管芯的电连接件的顶端和第一块体金属部件的顶端彼此基本平齐，并且多个TAV的底端和第一块体金属部件的底端彼此基本平齐。 
其中，第一块体金属部件电浮置，并且器件进一步包括位于聚合物中的第二块体金属部件，第二块体金属部件电接地。 
该封装件进一步包括：载体，位于器件管芯和聚合物的下方；以及多个器件管芯，位于聚合物中，第一块体金属部件连续在多个器件管芯之间延伸。 
其中，从上往下看时，封装件中的所有块体金属部件的总面积大于封装件的总面积的大约5％。 
其中，多个TAV和第一块体金属部件具有相同的组分。 
该封装件进一步包括：粘合剂，位于第一块体金属部件的下方并且与第一块体金属部件接触，不存在位于多个TAV下方并与多个TAV接触的粘合剂。 
此外，还提供了一种方法，包括：在载体的上方形成多个组件通孔(TAV)；在载体的上方放置器件管芯，器件管芯包括电连接件；在聚合物中模制多个TAV、器件管芯和块体金属部件，其中，从上往下看时，块体金属部件的尺寸大于多个TAV中的每一个的尺寸；减薄聚合物，以露出多个TAV和器件管芯的电连接件；以及在多个TAV和器件管芯的电连接件的上方形成重布线层(RDL)，并且RDL连接至多个TAV和器件管芯的电连接件。 
其中，在减薄聚合物之后，露出块体金属部件。 
其中，在减薄聚合物之后，通过聚合物的层覆盖块体金属部件。 
该方法进一步包括：在聚合物中模制多个TAV、器件管芯和块体金属部件的步骤之前，在载体的上方形成图案化的光刻胶；在图案化的光刻胶的开口中同时喷镀块体金属部件和多个TAV；以及去除图案化的光刻胶，在去除图案化的光刻胶之后进行放置器件管芯的步骤。 
该方法进一步包括：在聚合物中模制多个TAV、器件管芯和块体金属部件的步骤之前，在载体的上方形成图案化的光刻胶；在图案化的光刻胶的开口中喷镀多个TAV；去除图案化的光刻胶；以及在去除图案化的光刻胶之后，在载体的上方粘合块体金属部件。 
附图说明
为了更全面地理解实施例及其优势，现将结合附图所进行的描述作为参考，其中： 
图1至图9示出了根据一些示例性实施例的制造包括被模制在聚合物中的器件管芯的封装件的中间阶段的截面图，其中，通过镀工艺，在聚合物中形成块体金属(bulk metal)部件； 
图9B示出了图9A中所示结构的顶视图； 
图10至图16示出了根据可选的示例性实施例的制造含被模制在聚合物中的器件管芯的封装件的中间阶段的截面图，其中，通过放置工艺，在聚合物中形成块体金属部件；以及 
图12B示出了图12A中所示结构的顶视图。 
具体实施方式
下面，详细讨论本公开各实施例的制造和使用。然而，应该理解，本实施例提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅仅示出了制造和使用本发明的具体方式，而不用于限制本发明的范围。 
根据各种示例性实施例，本申请提供了封装件结构及其形成方法。示出了形成封装件结构的中间阶段。讨论了实施例的变化。通过各种视图和示出的实施例，相同的参考数字用于表示相同的元件。 
图1至图9示出了根据一些示例性实施例的制造封装件结构的中间阶段的截面图。根据一些实施例，封装件结构可以是封装层叠(Package-on-Package，PoP)结构。参见图1，提供载体20，并且，在载体20上形成粘结层22。载体20可以是玻璃载体、陶瓷载体或其他。粘结层22可以由粘合剂(如紫外光(UV)胶)形成。 
在一些实施例中，在粘结层22的上方形成聚合物层24。例如，聚合物层24可以是聚酰亚胺、聚苯并恶唑(PBO)、苯并环丁烯(BCB)、或其他。例如，通过物理气相沉积(PVD)，在聚合物层24上形成镀晶种层26。晶种层26可以包括铜、铝、和/或其他。聚合物层24当作用于镀晶种层26的基膜。在可选的实施例中，不会形成聚合物层24，在粘结层22上形成晶种层26。在晶种层26的上方形成光刻胶28，然后图案化光刻胶28。因此，在光刻胶28中形成开口30，通过开口30露出晶种层26的一些部分。 
如图2所示，通过镀工艺(可以是电镀或无电镀)，在光刻胶28中形成金属部件32和34。在晶种层26的露出部分上镀金属部件32和34。通过整个描述，金属部件32被称为组件通孔(through assembly via)(TAV)32，且金属部件34被称为块体金属部件34。TAV 32的顶视图形状可以是矩形、正方形、圆形或其他形状。块体金属部件34的尺寸远大于TAV 32的尺寸。例如，块体金属部件34的宽度W1可以是TAV 32的宽度W2的大约1.25倍、2.25倍或5.0倍。虽然没有示出，但是，在图2所示的结构 的顶视图中，TAV 32和块体金属部件34的长度分别等于或大于宽度W1和W2。在一些实施例中，宽度W1介于大约100μm和大约500μm的范围内，或大约300μm和大约400μm的范围内，并且宽度W2可以介于大约400μm和大约800μm的范围内。 
然后去除光刻胶28。因此，露出被光刻胶28覆盖的晶种层26的一些部分。然后进行蚀刻步骤，以去除晶种层26的露出部分。另一方面，没有蚀刻与TAV 32和块体金属部件34重叠的晶种层26的部分。所产生的结构如图3所示。在图3中，因为形成晶种层26的材料可以与形成相应的上覆TAV 32和块体金属部件34的材料相似或相同，所以不再显示晶种层26，并且晶种层26与上覆的TAV 32和块体金属部件34融合，并且成为其的部分。TAV 32和块体金属部件34同时形成，因此它们由相同的材料形成，并且具有相同的材料组分。在一些实施例中，TAV 32的顶面32A与块体金属部件34的顶面34A平齐。在可选的实施例中，TAV 32的顶面32A高于块体金属部件34的顶面34A。 
图4示出了(例如，使用粘结层38)在聚合物层24上布置封装组件36。在一些实施例中，封装组件36包括器件管芯，该器件管芯可以是逻辑管芯、存储管芯或其他。器件管芯也可以包括有源器件(未示出)(如晶体管)、无源器件(未示出)(如电阻器、电容器和/或其他)。封装组件36也可以是包括器件管芯、中介层、封装衬底(未示出)、和/或其他的封装件。 
电连接件40(如铜柱)用作封装组件36的顶部，并且电连接到封装组件36中的器件。在一些实施例中，电连接件40凸出于封装组件36的剩余部分之上。在可选的实施例中，在封装组件36的顶面上形成介电层42，而电连接件40所具有的至少较低部分位于介电层42中。介电层42的顶面也可以与电连接件40的顶端大致平齐。 
参见图5，在封装组件36、TAV 32和块体金属部件34上模制聚合物44。聚合物44填充于封装组件36、TAV 32和块体金属部件34之间的间隙，并且可以与聚合物层24接触。聚合物44可以包括模塑料、模制底层填料、或环氧树脂。聚合物44的顶面高于电连接件40、TAV 32和块体金 属部件34的顶端。接着，进行减薄步骤，可以是研磨步骤，以减薄聚合物44，直到露出电连接件40和TAV 32。在一些实施例中，露出块体金属部件34的顶面。所产生的结构如图6所示。由于减薄步骤，TAV 32的顶端/面32A和块体金属部件34的顶端34A与电连接件40的端部/面40A大致平齐，并且与聚合物44的顶面44A大致平齐。在可选的实施例中，减薄步骤之后，块体金属部件34的顶端没有露出并且被聚合物44的剩余层覆盖。在这些实施例中，虚线34C表示块体金属部件34的顶端的位置，并且，可用聚合物44填满区域37。通过整个描述，图6中所示的结构被称为复合晶圆52，该复合晶圆52可具有硅晶圆的顶视图形状且其尺寸接近硅晶圆的尺寸。 
图7示出了重布线(RDL)46、介电层48和电连接件50的形成。在聚合物44的上方形成RDL 46，以连接到电连接件40和TAV 32，并且可以使电连接件40和TAV 32互连，或者也可以不使其互连。在一些实施例中，通过沉积金属层形成RDL 46，然后图案化该金属层。在可选的实施例中，使用波形花纹(damascene)工艺形成RDL 46和介电层48。RDL 46可以包括铝、铜、钨、和/或其合金。 
图7也示出了电连接件50的形成。在一些示例性实施例中，连接件50的形成包括在RDL 46的露出部分上放置焊料球，然后回流该焊料球。在可选的实施例中，连接件50的形成包括进行镀步骤，以在RDL 46上形成焊料区域，然后回流该焊料区域。连接件50也可以包括金属柱，或金属柱和焊料帽，它们还可以通过镀工艺形成。 
图8示出了顶封装组件54与连接件50的接合。顶层填料56分布在顶封装组件54和底封装件58之间的空间里。顶封装组件54可以是封装件、器件管芯或其他。在后续的工艺步骤中，去除载体20、粘结层22和聚合物层24，且所产生的结构如图9A中所示。RDL 62和连接件64可以与RDL46和连接件50基本相同，并且可以形成在TAV 32的底侧和电连接到TAV32。介电层60也可以形成在TAV 32的底侧上。 
沿着划线66A或66B将所得到的结构锯切成封装件58，其中，每个封装件58均包括与底封装件58接合的顶封装组件54。底封装件58包括封 装组件36、TAV 32、块体金属部件34、聚合物44、RDL 46、介电层48、RDL 62和连接件64。在一些实施例中，沿着划线66A进行锯切，因此块体金属部件34与封装件58的边缘58B稍微地分隔。在可选的实施例中，沿着划线66B进行锯切，因此块体金属部件34的边缘与封装件58的相应边缘58B对准。 
在RDL 46的形成中，例如，可以将图7和图8中所示的复合晶圆52拿起并传送到工作盘上(未示出)。用于拿起和传送复合晶圆52的工具可以是吸入压头(未示出)，该吸入压头与载体20的底面形成真空。此外，通过真空，工作盘可以将复合晶圆52固定住。这就要求复合晶圆52的翘曲度很低。虽然聚合物44的热膨胀系数(CTE)可以明显小于载体20的CTE，但是复合晶圆52的翘曲度可以是明显的。另一方面，块体金属部件34的CTE大于载体20的CTE。块体金属部件34的高CTE补偿了聚合物44的低CTE，因此，使得包含聚合物44和块体金属部件34的组合结构的整体CTE接近载体20的CTE。因此，复合晶圆52的翘曲度变小，并且更容易进行图7和图8中所示的步骤。 
图9B示出了封装件58的顶视图，其包括封装组件36、聚合物44、TAV 32、和块体金属部件34。在一些实施例中，邻近封装件58的边缘58B处形成块体金属部件34。块体金属部件34的一个或多个边缘34B也可以与封装件58的相应边缘58B对准。在示出的实施例中，块体金属部件34包括两个部分，每个部分均沿着封装件58的一个边缘58B延伸。块体金属部件34的长度可以接近或等于封装件58的相应边缘58B的长度。在可选的实施例中，封装件58可以包括一个、三个、四个或更多个块体金属部件34。也可以在远离封装件58的边缘处形成一些块体金属部件34。 
块体金属部件34可以是虚拟部件，其是电浮动并且与TAV 32和RDL46不相连(如图9A)。此外，块体金属部件34可以与其他集成电路和RDL46物理分隔。例如，块体金属部件34的顶面和底面可以与介电材料相接触。一些块体金属部件34也可以用作接地的接地连接件。 
封装件58中的块体金属部件34的整个顶视图面积大于TAV 32的整个顶视图面积，并且可以是TAV 32的整个顶视图面积的两倍、四倍或更 多倍。封装件58中的块体金属部件34的整个顶视图面积也可以大于封装件58的顶视图面积的大约5％、大约10％或更高的百分比。 
图10到图16示出了根据可选的实施例的形成封装件结构的中间阶段的截面图。除非有特定说明，否则这些实施例中的组件的材料和形成方法基本上与相同组件的一样，用图1到图9B所示实施例中的参考数字来表示。在图1到图9B中所示实施例的讨论中可以找到关于图10到图16中所示组件的形成工艺和材料的详细内容。 
参见图10，提供载体20，并且在载体20的上方形成粘结层22、聚合物层24和晶种层26。然后形成光刻胶28并对其进行图案化。接着，如图11所示，形成TAV 32，然后去除光刻胶28并且蚀刻晶种层26(图10)。此外，在所产生的结构中，晶种层26的剩余部分被认为是TAV 32的部分。 
在图12A中，通过粘合剂35将预先形成的块体金属部件34粘结在聚合物层24上。TAV和块体金属部件34可以由相同的材料形成且具有相同的组分，或可以由不同的材料形成。图12B示出了图12A中所示结构的顶视图，其中，从图12B中的平面交叉线12A-12A得到图12A中所示的截面图。如图12B所示，块体金属部件34所具有的尺寸可以接近载体20的尺寸，其上包括多个封装组件36。图12B中的矩形代表封装组件36和TAV 32。块体金属部件34也继续地在封装组件36和TAV 32之间延伸。 
图13到16中示出了根据这些实施例的剩下的工艺步骤。后续工艺步骤的详情基本上与图5到图9B中所示的相同，因此，此处无需重复介绍。图16示出了产生的示例性封装件58。 
通过块体金属部件34的形成，复合晶圆52的翘曲度(图8和图15)可以明显减小。在模拟情况下，当没有形成块体金属部件时，相应的复合晶圆的翘曲度是大约1.55μm。当形成图8中所示的实施例时，复合晶圆52的翘曲度减小到大约1.12μm。当形成图15所示的实施例时，复合晶圆52的翘曲度减小到大约1.39μm。随着翘曲度的减小，在进行工艺时，工艺难度也会降低。 
根据实施例，一种器件包括：聚合物；器件管芯；位于聚合物中；和多个TAV，从聚合物的顶面延伸到聚合物的底面。块体金属部件位于聚合 物中，且所具有的顶视图尺寸大于多个TAV中的每一个的顶视图尺寸。块体金属部件是电浮动。聚合物、器件管芯、多个TAV以及块体金属部件是封装件的部分。 
根据其他实施例，一种器件包括：聚合物；和器件管芯，位于聚合物中。多个TAV从聚合物的顶面延伸到聚合物的底面。块体金属部件位于聚合物中，其中，聚合物、器件管芯、多个TAV以及块体金属部件包含在封装件中。块体金属部件的一个边缘与封装件的一个边缘对准。 
根据其他实施例，一种方法包括：在载体的上方形成多个TAV；和在载体的上方放置器件管芯，其中，器件管芯包括电连接件。多个TAV、器件管芯和块体金属部件模制在聚合物中，其中，块体金属部件所具有的顶视图尺寸大于多个TAV中每一个的顶视图尺寸。减薄聚合物，以露出多个TAV和器件管芯的电连接件。重布线形成在多个TAV和器件管芯的电连接件的上方并且与之连接。在载体的上方可以镀或粘合块体金属部件。 
尽管已经详细地描述了实施例及其优势，但应该理解，可以在不背离所附权利要求限定的实施例主旨和范围的情况下，做各种不同的改变，替换和更改。而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员应理解，通过本公开，现有的或今后开发的用于执行与根据本公开所采用的所述相应实施例基本相同的功能或获得基本相同结构的工艺、机器、制造、材料组分、装置、方法或步骤本届本公开可以被使用。因此，所附权利要求应该包括在这样的工艺、机器、制造、材料组分、装置、方法或步骤的范围内。此外，每条权利要求构成单独的实施例，并且多个权利要求和实施例的组合在本公开的范围内。 

Claims (10)

1.一种封装件，包括：
聚合物；
器件管芯，位于所述聚合物中；
多个组件通孔(TAV)，从所述聚合物的顶面延伸到所述聚合物的底面；以及
第一块体金属部件，位于所述聚合物中，并且从上向下看时，所述第一块体金属部件的尺寸大于所述多个TAV中的每一个的尺寸。
2.根据权利要求1所述的封装件，其中，所述第一块体金属部件邻近所述封装件的边缘。
3.根据权利要求2所述的封装件，其中，所述第一块体金属部件的边缘与所述封装件的边缘对准。
4.根据权利要求2所述的封装件，其中，从上向下看时，所述封装件中的所有块体金属部件的总面积大于所述封装件的总面积的大约5％。
5.根据权利要求1所述的封装件，进一步包括：位于所述聚合物中的第二块体金属部件，所述第二块体金属部件电接地。
6.根据权利要求1所述的封装件，其中，所述多个TAV的顶端与所述器件管芯的电连接件的顶端和所述第一块体金属部件的顶端基本平齐，并且所述多个TAV的底端与所述第一块体金属部件的底端平齐。
7.根据权利要求1所述的封装件，其中，所述多个TAV的顶端与所述器件管芯的电连接件的顶端基本平齐，所述第一块体金属部件的顶端低于所述多个TAV的顶端，并且所述多个TAV的底端与所述第一块体金属部件的底端平齐。
8.根据权利要求1所述的封装件，进一步包括：
载体，位于所述器件管芯和所述聚合物的下方；以及
多个器件管芯，位于所述聚合物中，从上往下看时，所述第一块体金属部件的尺寸基本等于所述载体的尺寸，并且所述第一块体金属部件连续在所述多个器件管芯之间延伸。
9.一种封装件，包括：
聚合物；
器件管芯，位于所述聚合物中；
多个组件通孔(TAV)，每个TAV均从所述聚合物的顶面延伸到所述聚合物的底面；以及
第一块体金属部件，位于所述聚合物中，所述第一块体金属部件的边缘与所述封装件的边缘对准。
10.一种方法，包括：
在载体的上方形成多个组件通孔(TAV)；
在所述载体的上方放置器件管芯，所述器件管芯包括电连接件；
在聚合物中模制所述多个TAV、所述器件管芯和块体金属部件，其中，从上往下看时，所述块体金属部件的尺寸大于所述多个TAV中的每一个的尺寸；
减薄所述聚合物，以露出所述多个TAV和所述器件管芯的所述电连接件；以及
在所述多个TAV和所述器件管芯的所述电连接件的上方形成重布线层(RDL)，并且所述RDL连接至所述多个TAV和所述器件管芯的所述电连接件。
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