CN103677032A - Voltage stabilizer based on punch-through sensor - Google Patents
Voltage stabilizer based on punch-through sensor Download PDFInfo
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- CN103677032A CN103677032A CN201310509790.1A CN201310509790A CN103677032A CN 103677032 A CN103677032 A CN 103677032A CN 201310509790 A CN201310509790 A CN 201310509790A CN 103677032 A CN103677032 A CN 103677032A
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- field effect
- effect transistor
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Abstract
A voltage stabilizer based on a punch-through sensor is characterized in that the drain electrode of a first FET is connected to a first terminal, the source electrode of the first FET is connected to the ground, the grid electrode of the first FET is connected to the source electrode of the first FET, a resistor is connected between a voltage source and the first terminal, the source electrode of a second FET is connected to the first terminal, the drain electrode of the second FET and the grid electrode of the second FET are together connected to a second terminal, the drain electrode of a third FET is connected to the voltage source, the source electrode of the third FET is connected to the second terminal, the grid electrode of the third FET is connected to a cross point between the resistor and the drain electrode of the first FET, other FETs are connected in sequence, and therefore the voltage stabilizer for supplying a controlled voltage to a circuit is obtained through specific implementation.
Description
Technical field
The present invention relates to integrated circuit, particularly one integrated, the voltage stabilizer of pinpoint accuracy.
Background technology
The microminiaturization of MOS field effect transistor (MOSFET) is that a kind of traditional method is in the development of high-density DRAM (DRAM).Yet the MOSFET of sub-micron geometric configuration can the break-through of the energy/leakage current, and substrate current break-through.One of solution is exactly to reduce supply voltage
v cc lower than 5V.Yet this supply voltage that reduces also has the hope of other 5 V single supply designs to conflict with wishing compatible transistor-transistor logic circuit (TTL).
In order to solve this contradiction, Voltagre regulator on a chip is suggested, utilize 5 outside V power supplys that the I/O that comprises relatively little number of transistors circuit is provided, and by the major part of the converter supply circuit of a low-voltage, as shown in Figure 1.Voltage conversion circuit is according to four MOSFET:M1 being linked in sequence under diode arrangement, M2, M3 and M4.So the shortcoming of electric pressure converter is, is connected to the threshold voltage of four transistor M1-M4 in source/leakage punch through voltage.For example, if each transistorized changes of threshold ± 0.2 V, the coefficient of uncertainty that then output voltage of this converter has is just ± 0.8 V.
Summary of the invention
The invention provides a kind of mu balanced circuit, for generation of one, control voltage.
Technical solution of the present invention is:
This voltage stabilizer comprises first field effect transistor (FET), and its drain electrode is connected to the first terminal, and its source electrode is connected to earth potential, and its grid is connected to the source electrode of oneself.There is a resistance to be connected between voltage source and the first terminal.Have second field effect transistor, its source electrode is connected to the first terminal, and drain and gate is connected to the second terminal jointly.Have the 3rd field effect transistor, its drain electrode is connected to voltage source, and its source electrode is connected to the second terminal, and grid is connected to the point of crossing between resistance and the drain electrode of the first field effect transistor.Have the 4th field effect transistor, its drain electrode is connected to the second terminal, and its source electrode is connected to provide an output signal.Have the 5th field effect transistor, its drain electrode is connected to voltage source, and its source electrode is connected to the drain electrode of the 6th field effect transistor, and its drain electrode is connected to the first terminal.Have the 6th field effect transistor, its drain electrode is connected to the source electrode of the 5th field effect transistor, and its source electrode is connected to the second terminal, and its grid is connected to its drain electrode.Have an electric capacity, one end is connected between the source electrode of the 5th field effect transistor and the drain electrode of the 6th field effect transistor, and the other end is connected to resonant oscillator.According to existing invention, the channel length of the first field effect transistor is consistent with the channel length of field effect transistor in circuit.
Contrast patent documentation: CN202854636 pressure stabilizer 201220571447.0.
Accompanying drawing explanation:
Fig. 1 has shown the schematic diagram of traditional voltage translator circuit.
Fig. 2 has shown according to the schematic diagram of a mu balanced circuit of the present invention example.
Embodiment:
As shown in Figure 2, voltage stabilizer of the present invention comprises field effect transistor (FET) 12, and its drain electrode is connected to node A, and source electrode is connected to earth potential, and grid is connected to its source electrode.A resistance R is connected between the power supply and node A of 5V.Second field effect transistor 14 is connected between node A and Node B, and its source electrode is connected to node A like this, and drain and gate can be connected to Node B jointly.The 3rd field effect transistor 16, its drain electrode is connected to power supply
vcc, source electrode is connected to Node B, and grid is connected to the tie point between resistance R and the drain electrode of field effect transistor 12.The 4th field effect transistor 18, its drain electrode is connected to power supply
vccgrid is connected to Node B, and source electrode is connected to the output terminal that output signal is provided.Two other field effect transistors 20 and 22 are linked in sequence at power supply
vccand Node B is with between the tie point between the grid of field effect transistor 18.The drain electrode of field effect transistor 20 is connected to power supply
vcc, source electrode is connected to the drain electrode of field effect transistor 22, and grid is connected to node A.The drain electrode of field effect transistor 22 is connected to the source electrode of field effect transistor 20, and its source electrode is connected to Node B, and grid is connected to its drain electrode.A capacitor C, its one end is connected to the tie point between the source electrode of field effect transistor 20 and the drain electrode of field effect transistor 22, and the other end is connected to a resonant oscillator.
Resistance R and field effect transistor 12 form leakage/source break-through sensor.The channel length of field effect transistor 12, corresponding to the bottom line on chip.Therefore, the maximum voltage at node A place equals the transistorized punch through voltage of minimum dimension on chip.At the field effect transistor 14 of diode arrangement, the voltage level above the grid of maintenance field effect transistor 18
v b =
v a =
v t (
v t the threshold voltage of field effect transistor 14) corresponding to
v oUT ≤
v a .When powering on, field effect transistor 16 is given Node B precharge. Field effect transistor 20 and 22, and a charge pump of capacitor C formation, to maintain the voltage at Node B place.
Therefore, voltage stabilizer of the present invention has autocorrelation, makes the output voltage of voltage stabilizer equal drain/source voltage breakdown or the VCC power supply of device 12, with less person, is as the criterion.
Those skilled in the art also will appreciate that, the present invention can be different from above-mentioned example, and described example only for illustrative purposes, rather than restrictive, and the present invention is only defined by the claims scope.
Claims (1)
1. the voltage stabilizer based on punch-through sensor, it is characterized in that: a kind of voltage that is used to provide control comprises to the voltage stabilizer of circuit: first field effect transistor (FET), its drain electrode is connected to the first terminal, its source electrode is connected to earth potential, and its grid is connected to the source electrode of oneself; A resistance is connected between voltage source and the first terminal; Second field effect transistor, its source electrode is connected to the first terminal, and drain and gate is connected to the second terminal jointly; The 3rd field effect transistor, its drain electrode is connected to voltage source, and its source electrode is connected to the second terminal, and grid is connected to the point of crossing between resistance and the drain electrode of the first field effect transistor; The 4th field effect transistor, its drain electrode is connected to the second terminal, and its source electrode is connected to provide an output signal; The 5th field effect transistor, its drain electrode is connected to voltage source, and its source electrode is connected to the drain electrode of the 6th field effect transistor, and its drain electrode is connected to the first terminal; The 6th field effect transistor, its drain electrode is connected to the source electrode of the 5th field effect transistor, and its source electrode is connected to the second terminal, and its grid is connected to its drain electrode; An electric capacity, one end is connected between the source electrode of the 5th field effect transistor and the drain electrode of the 6th field effect transistor, and the other end is connected to resonant oscillator; Wherein the channel length of the first field effect transistor is consistent with the channel length of field effect transistor in circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310509790.1A CN103677032A (en) | 2013-10-25 | 2013-10-25 | Voltage stabilizer based on punch-through sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310509790.1A CN103677032A (en) | 2013-10-25 | 2013-10-25 | Voltage stabilizer based on punch-through sensor |
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| Publication Number | Publication Date |
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| CN103677032A true CN103677032A (en) | 2014-03-26 |
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ID=50314906
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| CN201310509790.1A Pending CN103677032A (en) | 2013-10-25 | 2013-10-25 | Voltage stabilizer based on punch-through sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112714694A (en) * | 2018-09-24 | 2021-04-27 | 惠普发展公司，有限责任合伙企业 | Fluid actuator connected to field effect transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3806742A (en) * | 1972-11-01 | 1974-04-23 | Motorola Inc | Mos voltage reference circuit |
| US4670706A (en) * | 1985-03-27 | 1987-06-02 | Mitsubishi Denki Kabushiki Kaisha | Constant voltage generating circuit |
| US4736154A (en) * | 1987-09-03 | 1988-04-05 | National Semiconductor Corporation | Voltage regulator based on punch-through sensor |
-
2013
- 2013-10-25 CN CN201310509790.1A patent/CN103677032A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3806742A (en) * | 1972-11-01 | 1974-04-23 | Motorola Inc | Mos voltage reference circuit |
| US4670706A (en) * | 1985-03-27 | 1987-06-02 | Mitsubishi Denki Kabushiki Kaisha | Constant voltage generating circuit |
| US4670706B1 (en) * | 1985-03-27 | 1989-07-25 | ||
| US4736154A (en) * | 1987-09-03 | 1988-04-05 | National Semiconductor Corporation | Voltage regulator based on punch-through sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112714694A (en) * | 2018-09-24 | 2021-04-27 | 惠普发展公司，有限责任合伙企业 | Fluid actuator connected to field effect transistor |
| US11633949B2 (en) | 2018-09-24 | 2023-04-25 | Hewlett-Packard Development Company, L.P. | Fluid actuators connected to field effect transistors |
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Application publication date: 20140326 |