CN103676353B - Dot structure, array base palte and display device - Google Patents
Dot structure, array base palte and display device Download PDFInfo
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- CN103676353B CN103676353B CN201310646412.8A CN201310646412A CN103676353B CN 103676353 B CN103676353 B CN 103676353B CN 201310646412 A CN201310646412 A CN 201310646412A CN 103676353 B CN103676353 B CN 103676353B
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Abstract
The dot structure of the present invention, array base palte and display device, wherein, the dot structure of the present invention, including the first electrode and the second electrode, first electrode includes multiple first electrode portion and multiple first gaps between the first adjacent electrode portion, second electrode includes the second electrode portion of multiple strip and parallel equidistant arrangement and multiple second gaps between the second adjacent electrode portion, the projection downward vertically in the first electrode portion exists overlapping with the projection downward vertically in the second electrode portion, second electrode includes the 3rd electrode portion, each second electrode portion is connected by a 3rd electrode portion with the second adjacent electrode portion.The array base palte of the present invention, including the dot structure of the present invention.The display device of the present invention, including the array base palte of the present invention.Technical scheme reduces storage electric capacity, and the second electrode carries out the design of slit pattern, is reducing on the basis of storage electric capacity, is maintaining higher transmitance, process yields.
Description
Technical field
The invention belongs to technical field of liquid crystal display, be specifically related to a kind of dot structure, array base palte and display device.
Background technology
Along with TFT liquid crystal display (ThinFilmTransistorLiquidCrystalDisplay, TFT-LCD) progress of the development of technology and industrial technology, liquid crystal display device production cost reduce, manufacturing process day by day perfect, TFT-LCD instead of cathode-ray tube display becomes the mainstream technology of flat display field.
Raising day by day due to living standard, the requirement of display device is also improved by client further, high refreshing frequency, and the display device of high display quality becomes main flow, simultaneously for strengthening product competitiveness, reduce display device cost and also become the inevitable choice of vast production firm.
LCD shows display modes such as being divided into twisted nematic (TN), perpendicualr field switch type (VA), flat field switch type (IPS), senior super dimension field switch type (ADS).Wherein TN, VA utilize vertical electric field to drive liquid crystal to rotate, to realize the control to GTG, typically requiring and add vertical electric field on the surface of infrabasal plate (array base palte) and upper substrate (colored filter substrate), liquid crystal rotates and is rendered as the state that we need under the effect of vertical electric field.But, the LCD display view angle that vertical electric field drives is narrower, namely when different directions is observed, reversal development can be there is in the picture under different GTGs, such as when client in side to viewing time, can find that the change of significant colour cast occurs the facial color of the personage in picture, the visual experience that have impact on client that now generation of GTG flop phenomenon is serious, it is impossible to realize higher added value of product.
For solving this problem, successively have developed flat field switch type display device and senior super dimension field switch type display device, flat field switch type Display Technique utilizes the electric field driven liquid crystal that the electrode being in same level produces horizontal direction to rotate, owing under this pattern, liquid crystal mainly takes place horizontally orientation, therefore optics retardation is less when other all directions are watched, namely it is not easy to produce gray-scale inversion, it is achieved better color quality；Senior super dimension field switch type adds the electric field of a part of vertical direction on the basis of plane electric fields, thus driving more liquid crystal to rotate, improve panel transmitance, reducing backlight module production cost.In the dot structure of senior super dimension field switch type display device, it is necessary to there is a bigger storage electric capacity.For improving the image quality of product quality particularly dynamic menu further, high-frequency drive display device is subject to the favor of more production firm, owing to the dot structure of senior super dimension field switch type display device existing bigger storage electric capacity (storagecapacitance), therefore its its scanning line when high-frequency drive needs higher load, thus need to increase the width of scanning line, but so certainly will will reduce aperture opening ratio, and then cause backlight module cost increase.
Summary of the invention
It is an object of the invention to provide a kind of storage electric capacity less, be maintained with higher transmitance, the dot structure of process yields, array base palte and display device.
The dot structure of the present invention, including the first electrode and the second electrode being positioned at the first base part, it is not turned between first electrode and the second electrode, described first electrode includes the first electrode portion of multiple strip and parallel equidistant arrangement and multiple first gaps between the first adjacent electrode portion, described second electrode includes the second electrode portion of multiple strip and parallel equidistant arrangement and multiple second gaps between the second adjacent electrode portion, the projection downward vertically in the first electrode portion of described first electrode exists overlapping with the projection downward vertically in the second electrode portion of the second electrode, described second electrode includes multiple strip and the 3rd electrode portion of parallel equidistant arrangement, the one end in each second electrode portion is connected by a described 3rd electrode portion with the one end in the second adjacent electrode portion.
The dot structure of the present invention, wherein, described 3rd electrode portion is parallel with the first electrode portion of described first electrode.
The dot structure of the present invention, wherein, the span of angle between projection downward vertically in the second electrode portion of projection and second electrode downward vertically in the first electrode portion of described first electrode is more than 3 degree and less than 21 degree.
The dot structure of the present invention, wherein, the first electrode portion of described first electrode downward vertically projection and the second electrode the second electrode portion downward vertically projection between angle be 11 degree.
The dot structure of the present invention, wherein, all first electrode portions of described first electrode are in parallel by the first connection strap, and all 3rd electrode portions in the second electrode portion and the second electrode portion are in parallel by the second connection strap.
The dot structure of the present invention, wherein, the width in the first gap is between 3-6um, and the first gap is wide with the second gap.
The dot structure of the present invention, wherein, described first electrode is pixel electrode, and described second electrode is public electrode.
The dot structure of the present invention, wherein, described second electrode is pixel electrode, and described first electrode is public electrode.
The array base palte of the present invention, including the dot structure of the present invention.
The display device of the present invention, including the array base palte of the present invention.
Technical scheme reduces storage electric capacity, and the second electrode carries out the design of slit pattern, is reducing on the basis of storage electric capacity, is maintaining higher transmitance, process yields.
Accompanying drawing explanation
Fig. 1 is the top view of the first electrode in the embodiment of the dot structure of the present invention and the second electrode, it is shown that the structure of the first electrode and the second electrode and between position relationship；
Fig. 2 is the top view of the first electrode and the second electrode in dot structure of the prior art.
Detailed description of the invention
The technical scheme is that reduction storage electric capacity, the second electrode carries out the design of slit pattern, this design is reducing on the basis of storage electric capacity, maintains higher transmitance, process yields.
nullAs shown in Figure 1，The embodiment of the dot structure of the present invention，Including the first electrode 1 be positioned at the second electrode 2 below the first electrode 1，It is not turned between first electrode 1 and the second electrode 2，First electrode 1 includes the first electrode portion 11 of multiple strip and parallel equidistant arrangement and multiple first gaps 12 between the first adjacent electrode portion 11，Second electrode 2 includes the second electrode portion 21 of multiple strip and parallel equidistant arrangement and multiple second gaps 22 between the second adjacent electrode portion 21，The projection downward vertically in each first electrode portion 11 of the first electrode 1 exists overlapping with the projection downward vertically in the second electrode portion 21 of the second electrode 2，Second electrode 2 includes multiple strip and the 3rd electrode portion 23 of parallel equidistant arrangement，The one end in each second electrode portion 21 is connected by a 3rd electrode portion 23 with the one end in the second adjacent electrode portion 21.
The embodiment of the dot structure of the present invention, wherein, each 3rd electrode portion 23 extends along the diagonal in second gap 22, and each 3rd electrode portion 23 connects two relative angles in second gap 22.
The embodiment of the dot structure of invention, storage electric capacity is formed between first electrode portion 11 and the second electrode portion 21 of the second electrode 2 of the first electrode 1, because the first electrode 1, second electrode 2 all includes gap, the projection downward vertically of such first electrode 1 is also considerably reduced with the area of the overlapping part projected downward vertically of the second electrode 2, thus relatively prior art, storage electric capacity is just greatly reduced, the one end in each second electrode portion 21 is connected by a 3rd electrode portion 23 with the one end in the second adjacent electrode portion 21 simultaneously, namely the dot structure of the present invention adopts Z-type electrode design, obtain a higher transmitance.
The embodiment of the dot structure of invention, wherein, the 3rd electrode portion 23 is parallel with the first electrode portion 11 of the first electrode 1.
The embodiment of dot structure of invention, wherein, the span of the angle between projection downward vertically in the second electrode portion 21 of projection and second electrode 2 downward vertically in the first electrode portion 11 of the first electrode 1 is more than 3 degree and less than 21 degree.
Preferably, the embodiment of the dot structure of invention, wherein, the first electrode portion 11 of the first electrode 1 downward vertically projection and the second electrode 2 the second electrode portion 21 downward vertically projection between angle be 11 degree.
The embodiment of the dot structure of the present invention, wherein, all first electrode portions 11 of the first electrode 1 are in parallel by the first connection strap 13, and all 3rd electrode portions 23 and all second electrode portions 21 in the second electrode portion 2 are in parallel by the second connection strap 24.
The embodiment of the dot structure of the present invention, wherein, the width in the first gap 12 is between 3-6um, and the first gap 12 and the second gap 22 are wide.
The embodiment of the dot structure of the present invention, wherein, the first electrode 1 is pixel electrode, and the second electrode 3 is public electrode.
In other embodiments of the dot structure of the present invention, the second electrode 2 can be pixel electrode, and the first electrode 1 is public electrode.
The array base palte of the present invention, including the dot structure of the present invention.
The display device of the present invention, including the array base palte of the present invention.
As in figure 2 it is shown, in a kind of dot structure of the prior art, the angle between projection downward vertically in the second electrode portion 21 of projection and second electrode 2 downward vertically in the first electrode portion 11 of the first electrode 1 is 9 degree.
Dot structure transmitance of the prior art is less, and the dot structure of the present invention adopts the design of Z-type public electrode, it is possible to obtain a higher transmitance；Storage electric capacity reduces simultaneously, and technological ability increases.
Assume that original senior super dimension field switch type display transmitance of structure, electric capacity are 100%.Process deviation allowed band is 1um.
According to simulation experiment the data obtained, above-mentioned dot structure of the prior art, transmitance is 82%, and storage electric capacity is the 45% of the dot structure of prior art earlier, and technological ability parameter is 0.4um.
The dot structure of the present invention, transmitance is 95%, and storage electric capacity is the 50% of the dot structure of prior art earlier, and technological ability parameter is 0.4um.
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also making some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (9)
- null1. a dot structure，Including the first electrode and the second electrode being positioned at the first base part，It is characterized in that，It is not turned between first electrode and the second electrode，Described first electrode includes the first electrode portion of multiple strip and parallel equidistant arrangement and multiple first gaps between the first adjacent electrode portion，Described second electrode includes the second electrode portion of multiple strip and parallel equidistant arrangement and multiple second gaps between the second adjacent electrode portion，The projection downward vertically in the first electrode portion of described first electrode exists overlapping with the projection downward vertically in the second electrode portion of the second electrode，Described second electrode includes multiple strip and the 3rd electrode portion of parallel equidistant arrangement，The one end in each second electrode portion is connected by a described 3rd electrode portion with the one end in the second adjacent electrode portion，Described 3rd electrode portion is parallel with the first electrode portion of described first electrode.
- 2. dot structure according to claim 1, it is characterised in that the span of angle between projection downward vertically in the second electrode portion of projection and second electrode downward vertically in the first electrode portion of described first electrode is more than 3 degree and less than 21 degree.
- 3. dot structure according to claim 2, it is characterised in that the first electrode portion of described first electrode downward vertically projection and the second electrode the second electrode portion downward vertically projection between angle be 11 degree.
- 4. dot structure according to claim 1, it is characterised in that all first electrode portions of described first electrode are in parallel by the first connection strap, all 3rd electrode portions in the second electrode portion and the second electrode portion are in parallel by the second connection strap.
- 5. dot structure according to claim 1, it is characterised in that the width in the first gap is between 3-6um, and the first gap is wide with the second gap.
- 6. dot structure according to claim 1, it is characterised in that described first electrode is pixel electrode, described second electrode is public electrode.
- 7. dot structure according to claim 1, it is characterised in that described second electrode is pixel electrode, described first electrode is public electrode.
- 8. an array base palte, it is characterised in that include the dot structure as according to any one of claim 1-7.
- 9. a display device, it is characterised in that include array base palte as claimed in claim 8.
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| CN201310646412.8A CN103676353B (en) | 2013-12-04 | 2013-12-04 | Dot structure, array base palte and display device |
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| CN201310646412.8A CN103676353B (en) | 2013-12-04 | 2013-12-04 | Dot structure, array base palte and display device |
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| CN103676353A CN103676353A (en) | 2014-03-26 |
| CN103676353B true CN103676353B (en) | 2016-07-06 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10317750B2 (en) * | 2015-07-03 | 2019-06-11 | Sharp Kabushiki Kaisha | Liquid crystal display device |
| US20190025657A1 (en) * | 2015-09-12 | 2019-01-24 | Lensvector Inc. | Liquid crystal beam control device |
| CN105487311A (en) * | 2016-01-29 | 2016-04-13 | 重庆京东方光电科技有限公司 | Pixel structure and making method thereof, array substrate and display device |
| CN105700259A (en) * | 2016-04-18 | 2016-06-22 | 京东方科技集团股份有限公司 | Array substrate, liquid crystal display panel and display device |
| CN106129065B (en) * | 2016-07-15 | 2019-06-07 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display panel |
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| CN1637552A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Thin film transistor substrate of a horizontal electric field type and method of darkening defective pixel in the same |
| WO2012165617A1 (en) * | 2011-06-03 | 2012-12-06 | シャープ株式会社 | Liquid crystal display device |
| CN102830560A (en) * | 2012-08-27 | 2012-12-19 | 京东方科技集团股份有限公司 | Array substrate and method for manufacturing same |
| CN102866543A (en) * | 2012-09-13 | 2013-01-09 | 京东方科技集团股份有限公司 | Pixel unit, array substrate and liquid crystal display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20080003078A (en) * | 2006-06-30 | 2008-01-07 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display device and and method for fabricating the same |
| KR20120107721A (en) * | 2011-03-22 | 2012-10-04 | 삼성디스플레이 주식회사 | A fringe field switching mode liquid crystal display apparatus and an the manufacturing method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1637552A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Thin film transistor substrate of a horizontal electric field type and method of darkening defective pixel in the same |
| WO2012165617A1 (en) * | 2011-06-03 | 2012-12-06 | シャープ株式会社 | Liquid crystal display device |
| CN102830560A (en) * | 2012-08-27 | 2012-12-19 | 京东方科技集团股份有限公司 | Array substrate and method for manufacturing same |
| CN102866543A (en) * | 2012-09-13 | 2013-01-09 | 京东方科技集团股份有限公司 | Pixel unit, array substrate and liquid crystal display device |
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